JPWO2021111534A1 - - Google Patents

Info

Publication number
JPWO2021111534A1
JPWO2021111534A1 JP2021562242A JP2021562242A JPWO2021111534A1 JP WO2021111534 A1 JPWO2021111534 A1 JP WO2021111534A1 JP 2021562242 A JP2021562242 A JP 2021562242A JP 2021562242 A JP2021562242 A JP 2021562242A JP WO2021111534 A1 JPWO2021111534 A1 JP WO2021111534A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021562242A
Other versions
JP7292416B2 (ja
JPWO2021111534A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021111534A1 publication Critical patent/JPWO2021111534A1/ja
Publication of JPWO2021111534A5 publication Critical patent/JPWO2021111534A5/ja
Application granted granted Critical
Publication of JP7292416B2 publication Critical patent/JP7292416B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
JP2021562242A 2019-12-04 2019-12-04 光送信モジュール Active JP7292416B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/047329 WO2021111534A1 (ja) 2019-12-04 2019-12-04 光送信モジュール

Publications (3)

Publication Number Publication Date
JPWO2021111534A1 true JPWO2021111534A1 (ja) 2021-06-10
JPWO2021111534A5 JPWO2021111534A5 (ja) 2022-06-02
JP7292416B2 JP7292416B2 (ja) 2023-06-16

Family

ID=76222600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021562242A Active JP7292416B2 (ja) 2019-12-04 2019-12-04 光送信モジュール

Country Status (4)

Country Link
US (1) US20220344895A1 (ja)
JP (1) JP7292416B2 (ja)
CN (1) CN114731022A (ja)
WO (1) WO2021111534A1 (ja)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004063852A (ja) * 2002-07-30 2004-02-26 Mitsubishi Electric Corp 光半導体集積装置
JP2004356233A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 半導体レーザモジュールおよび半導体レーザ装置
JP2005191088A (ja) * 2003-12-24 2005-07-14 Mitsubishi Electric Corp 半導体用パッケージ及び半導体デバイス
JP2005286305A (ja) * 2004-03-02 2005-10-13 Mitsubishi Electric Corp 光半導体装置
JP2008103774A (ja) * 2008-01-18 2008-05-01 Opnext Japan Inc 高周波光伝送モジュールおよび光伝送器
JP2013084839A (ja) * 2011-10-12 2013-05-09 Sony Corp 半導体レーザー駆動回路及び半導体レーザー装置
JP2014027307A (ja) * 2011-11-30 2014-02-06 Panasonic Corp 窒化物半導体発光装置
US8989227B1 (en) * 2013-11-12 2015-03-24 Electronics And Telecommunications Research Institute VCSEL driver maintaining steady operation from temperature effects of VCSEL diode using automatic bias control (ABC) and automatic modulation control (AMC) in optical transceiver
WO2018211635A1 (ja) * 2017-05-17 2018-11-22 三菱電機株式会社 半導体パッケージ
JP2018195704A (ja) * 2017-05-17 2018-12-06 富士通株式会社 駆動回路、これを用いた光送信モジュール及び光伝送装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004063852A (ja) * 2002-07-30 2004-02-26 Mitsubishi Electric Corp 光半導体集積装置
JP2004356233A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 半導体レーザモジュールおよび半導体レーザ装置
JP2005191088A (ja) * 2003-12-24 2005-07-14 Mitsubishi Electric Corp 半導体用パッケージ及び半導体デバイス
JP2005286305A (ja) * 2004-03-02 2005-10-13 Mitsubishi Electric Corp 光半導体装置
JP2008103774A (ja) * 2008-01-18 2008-05-01 Opnext Japan Inc 高周波光伝送モジュールおよび光伝送器
JP2013084839A (ja) * 2011-10-12 2013-05-09 Sony Corp 半導体レーザー駆動回路及び半導体レーザー装置
JP2014027307A (ja) * 2011-11-30 2014-02-06 Panasonic Corp 窒化物半導体発光装置
US8989227B1 (en) * 2013-11-12 2015-03-24 Electronics And Telecommunications Research Institute VCSEL driver maintaining steady operation from temperature effects of VCSEL diode using automatic bias control (ABC) and automatic modulation control (AMC) in optical transceiver
WO2018211635A1 (ja) * 2017-05-17 2018-11-22 三菱電機株式会社 半導体パッケージ
JP2018195704A (ja) * 2017-05-17 2018-12-06 富士通株式会社 駆動回路、これを用いた光送信モジュール及び光伝送装置

Also Published As

Publication number Publication date
JP7292416B2 (ja) 2023-06-16
US20220344895A1 (en) 2022-10-27
CN114731022A (zh) 2022-07-08
WO2021111534A1 (ja) 2021-06-10

Similar Documents

Publication Publication Date Title
BR112019017762A2 (ja)
BR112021013854A2 (ja)
BR112019016141A2 (ja)
AU2020104490A4 (ja)
BR112019016138A2 (ja)
BR112019016142A2 (ja)
BR112021017173A2 (ja)
BR112021017083A2 (ja)
BR112021008711A2 (ja)
BR112021012348A2 (ja)
BR112021013944A2 (ja)
BR112021013128A2 (ja)
BR112021015080A2 (ja)
BR112021016205A2 (ja)
BR112021016996A2 (ja)
BR112021017010A2 (ja)
BR112019016136A2 (ja)
BR112021016821A2 (ja)
BR112021016979A2 (ja)
BR112021016784A2 (ja)
BR112021016099A2 (ja)
JPWO2021111534A1 (ja)
BR102019023359A2 (ja)
BR112021017081A2 (ja)
CN305028150S (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220324

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220324

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230307

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230403

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230509

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230606

R151 Written notification of patent or utility model registration

Ref document number: 7292416

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151