JPWO2021062040A5 - - Google Patents

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Publication number
JPWO2021062040A5
JPWO2021062040A5 JP2022518934A JP2022518934A JPWO2021062040A5 JP WO2021062040 A5 JPWO2021062040 A5 JP WO2021062040A5 JP 2022518934 A JP2022518934 A JP 2022518934A JP 2022518934 A JP2022518934 A JP 2022518934A JP WO2021062040 A5 JPWO2021062040 A5 JP WO2021062040A5
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JP
Japan
Prior art keywords
few
wafer
defect
lithographic
defects
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JP2022518934A
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Japanese (ja)
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JP7443501B2 (ja
JP2022549469A (ja
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Priority claimed from PCT/US2020/052560 external-priority patent/WO2021062040A1/en
Publication of JP2022549469A publication Critical patent/JP2022549469A/ja
Publication of JPWO2021062040A5 publication Critical patent/JPWO2021062040A5/ja
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JP2022518934A 2019-09-25 2020-09-24 欠陥確率分布および限界寸法変動に基づくリソグラフィ改良 Active JP7443501B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962905771P 2019-09-25 2019-09-25
US62/905,771 2019-09-25
US201962907901P 2019-09-30 2019-09-30
US62/907,901 2019-09-30
PCT/US2020/052560 WO2021062040A1 (en) 2019-09-25 2020-09-24 Lithography improvement based on defect probability distributions and critical dimension variations

Publications (3)

Publication Number Publication Date
JP2022549469A JP2022549469A (ja) 2022-11-25
JPWO2021062040A5 true JPWO2021062040A5 (ko) 2023-08-07
JP7443501B2 JP7443501B2 (ja) 2024-03-05

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JP2022518934A Active JP7443501B2 (ja) 2019-09-25 2020-09-24 欠陥確率分布および限界寸法変動に基づくリソグラフィ改良

Country Status (4)

Country Link
US (1) US11314171B2 (ko)
JP (1) JP7443501B2 (ko)
KR (1) KR20220065769A (ko)
CN (1) CN114514473A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202211075A (zh) * 2020-06-05 2022-03-16 美商新思科技股份有限公司 校正在精簡模型中的隨機訊號
CN115167019A (zh) * 2022-07-15 2022-10-11 苏州华星光电技术有限公司 曝光缺陷感知装置、显示终端及曝光缺陷感知方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3330648B2 (ja) * 1992-10-06 2002-09-30 富士通株式会社 光源形状の最適化方法
JP4700672B2 (ja) 2006-11-08 2011-06-15 エーエスエムエル マスクツールズ ビー.ブイ. ライン幅粗さおよびレジストパターン不良を予測する方法、プログラム、および装置、ならびにそのリソグラフィシミュレーションプロセスでの使用
NL2003699A (en) * 2008-12-18 2010-06-21 Brion Tech Inc Method and system for lithography process-window-maximixing optical proximity correction.
NL2009982A (en) * 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
EP3105637A1 (en) * 2014-02-11 2016-12-21 ASML Netherlands B.V. Model for calculating a stochastic variation in an arbitrary pattern
CN109891319B (zh) 2016-10-24 2023-11-10 Asml荷兰有限公司 用于优化图案化装置图案的方法
US10474042B2 (en) * 2017-03-22 2019-11-12 Kla-Tencor Corporation Stochastically-aware metrology and fabrication
WO2020094389A1 (en) 2018-11-08 2020-05-14 Asml Netherlands B.V. Failure model for predicting failure due to resist layer

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