JPWO2021060182A1 - - Google Patents

Info

Publication number
JPWO2021060182A1
JPWO2021060182A1 JP2020551436A JP2020551436A JPWO2021060182A1 JP WO2021060182 A1 JPWO2021060182 A1 JP WO2021060182A1 JP 2020551436 A JP2020551436 A JP 2020551436A JP 2020551436 A JP2020551436 A JP 2020551436A JP WO2021060182 A1 JPWO2021060182 A1 JP WO2021060182A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020551436A
Other languages
Japanese (ja)
Other versions
JPWO2021060182A5 (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021060182A1 publication Critical patent/JPWO2021060182A1/ja
Publication of JPWO2021060182A5 publication Critical patent/JPWO2021060182A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP2020551436A 2019-09-26 2020-09-18 Pending JPWO2021060182A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019175316 2019-09-26
PCT/JP2020/035439 WO2021060182A1 (ja) 2019-09-26 2020-09-18 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021060182A1 true JPWO2021060182A1 (zh) 2021-04-01
JPWO2021060182A5 JPWO2021060182A5 (zh) 2023-06-12

Family

ID=75165758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020551436A Pending JPWO2021060182A1 (zh) 2019-09-26 2020-09-18

Country Status (4)

Country Link
JP (1) JPWO2021060182A1 (zh)
CN (1) CN114342101A (zh)
TW (1) TW202112950A (zh)
WO (1) WO2021060182A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115148848A (zh) * 2022-06-27 2022-10-04 常州时创能源股份有限公司 链式吸杂用磷源及其制备方法和应用
WO2024057722A1 (ja) * 2022-09-16 2024-03-21 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
WO2012161107A1 (ja) * 2011-05-20 2012-11-29 日本合成化学工業株式会社 不純物拡散用塗布液
JP2016195203A (ja) * 2015-04-01 2016-11-17 東レ株式会社 ｐ型不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池。
JP2017103379A (ja) * 2015-12-03 2017-06-08 東レ株式会社 不純物拡散組成物、およびそれを用いた半導体素子の製造方法
WO2019176716A1 (ja) * 2018-03-16 2019-09-19 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法
WO2020116340A1 (ja) * 2018-12-07 2020-06-11 東レ株式会社 半導体素子の製造方法、および、太陽電池の製造方法

Also Published As

Publication number Publication date
WO2021060182A1 (ja) 2021-04-01
CN114342101A (zh) 2022-04-12
TW202112950A (zh) 2021-04-01

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