JPWO2020254910A1 - - Google Patents
Info
- Publication number
- JPWO2020254910A1 JPWO2020254910A1 JP2021528028A JP2021528028A JPWO2020254910A1 JP WO2020254910 A1 JPWO2020254910 A1 JP WO2020254910A1 JP 2021528028 A JP2021528028 A JP 2021528028A JP 2021528028 A JP2021528028 A JP 2021528028A JP WO2020254910 A1 JPWO2020254910 A1 JP WO2020254910A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025023722A JP2025071143A (ja) | 2019-06-21 | 2025-02-17 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019115150 | 2019-06-21 | ||
| JP2019115150 | 2019-06-21 | ||
| PCT/IB2020/055353 WO2020254910A1 (ja) | 2019-06-21 | 2020-06-08 | 金属酸化物、金属酸化物の形成方法、半導体装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025023722A Division JP2025071143A (ja) | 2019-06-21 | 2025-02-17 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020254910A1 true JPWO2020254910A1 (https=) | 2020-12-24 |
| JPWO2020254910A5 JPWO2020254910A5 (ja) | 2023-06-13 |
| JP7637619B2 JP7637619B2 (ja) | 2025-02-28 |
Family
ID=74040707
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021528028A Active JP7637619B2 (ja) | 2019-06-21 | 2020-06-08 | 金属酸化物および半導体装置 |
| JP2025023722A Pending JP2025071143A (ja) | 2019-06-21 | 2025-02-17 | 半導体装置の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025023722A Pending JP2025071143A (ja) | 2019-06-21 | 2025-02-17 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20220320339A1 (https=) |
| JP (2) | JP7637619B2 (https=) |
| WO (1) | WO2020254910A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013145876A (ja) * | 2011-12-15 | 2013-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2014045178A (ja) * | 2012-08-03 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 酸化物半導体積層膜及び半導体装置 |
| JP2014158018A (ja) * | 2013-01-18 | 2014-08-28 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102071545B1 (ko) * | 2012-05-31 | 2020-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102669279B1 (ko) * | 2015-02-06 | 2024-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR20170096956A (ko) * | 2016-02-17 | 2017-08-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기 |
| US10096718B2 (en) * | 2016-06-17 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, electronic device, manufacturing method of transistor |
-
2020
- 2020-06-08 US US17/615,859 patent/US20220320339A1/en active Pending
- 2020-06-08 WO PCT/IB2020/055353 patent/WO2020254910A1/ja not_active Ceased
- 2020-06-08 JP JP2021528028A patent/JP7637619B2/ja active Active
-
2025
- 2025-02-17 JP JP2025023722A patent/JP2025071143A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013145876A (ja) * | 2011-12-15 | 2013-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2014045178A (ja) * | 2012-08-03 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 酸化物半導体積層膜及び半導体装置 |
| JP2014158018A (ja) * | 2013-01-18 | 2014-08-28 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025071143A (ja) | 2025-05-02 |
| WO2020254910A1 (ja) | 2020-12-24 |
| US20220320339A1 (en) | 2022-10-06 |
| JP7637619B2 (ja) | 2025-02-28 |
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