JPWO2020235465A1 - - Google Patents
Info
- Publication number
- JPWO2020235465A1 JPWO2020235465A1 JP2021520760A JP2021520760A JPWO2020235465A1 JP WO2020235465 A1 JPWO2020235465 A1 JP WO2020235465A1 JP 2021520760 A JP2021520760 A JP 2021520760A JP 2021520760 A JP2021520760 A JP 2021520760A JP WO2020235465 A1 JPWO2020235465 A1 JP WO2020235465A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/267—Current mirrors using both bipolar and field-effect technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019094338 | 2019-05-20 | ||
JP2019094338 | 2019-05-20 | ||
PCT/JP2020/019402 WO2020235465A1 (ja) | 2019-05-20 | 2020-05-15 | 半導体装置および車載用電子制御装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020235465A1 true JPWO2020235465A1 (ja) | 2020-11-26 |
JP7144609B2 JP7144609B2 (ja) | 2022-09-29 |
Family
ID=73458990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021520760A Active JP7144609B2 (ja) | 2019-05-20 | 2020-05-15 | 半導体装置および車載用電子制御装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220221891A1 (ja) |
JP (1) | JP7144609B2 (ja) |
CN (1) | CN113853742A (ja) |
WO (1) | WO2020235465A1 (ja) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62200808A (ja) * | 1986-02-20 | 1987-09-04 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | トランスコンダクタンス増幅器 |
JPH02248107A (ja) * | 1989-03-22 | 1990-10-03 | Nec Corp | 演算増幅器 |
US5473243A (en) * | 1993-01-27 | 1995-12-05 | Siemens Aktiengesellschaft | Integratable current source circuit for generating an output current proportional to an input current |
JPH09191252A (ja) * | 1996-01-08 | 1997-07-22 | Mitsubishi Electric Corp | 電流加算型デジタルアナログ変換回路 |
JP2001196372A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置 |
JP2007129075A (ja) * | 2005-11-04 | 2007-05-24 | New Japan Radio Co Ltd | 半導体装置 |
JP2010187005A (ja) * | 2010-03-30 | 2010-08-26 | Fujitsu Semiconductor Ltd | 複数の配線層を有する半導体回路の端子層設定に用いられる端子延長用コンポーネント |
JP2011108994A (ja) * | 2009-11-20 | 2011-06-02 | Elpida Memory Inc | 半導体装置 |
JP2012054502A (ja) * | 2010-09-03 | 2012-03-15 | Elpida Memory Inc | 半導体装置 |
JP2013008926A (ja) * | 2011-06-27 | 2013-01-10 | Fujitsu Semiconductor Ltd | レイアウト方法及び半導体装置の製造方法 |
-
2020
- 2020-05-15 CN CN202080037020.XA patent/CN113853742A/zh active Pending
- 2020-05-15 WO PCT/JP2020/019402 patent/WO2020235465A1/ja active Application Filing
- 2020-05-15 JP JP2021520760A patent/JP7144609B2/ja active Active
- 2020-05-15 US US17/611,646 patent/US20220221891A1/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62200808A (ja) * | 1986-02-20 | 1987-09-04 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | トランスコンダクタンス増幅器 |
JPH02248107A (ja) * | 1989-03-22 | 1990-10-03 | Nec Corp | 演算増幅器 |
US5473243A (en) * | 1993-01-27 | 1995-12-05 | Siemens Aktiengesellschaft | Integratable current source circuit for generating an output current proportional to an input current |
JPH09191252A (ja) * | 1996-01-08 | 1997-07-22 | Mitsubishi Electric Corp | 電流加算型デジタルアナログ変換回路 |
JP2001196372A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置 |
JP2007129075A (ja) * | 2005-11-04 | 2007-05-24 | New Japan Radio Co Ltd | 半導体装置 |
JP2011108994A (ja) * | 2009-11-20 | 2011-06-02 | Elpida Memory Inc | 半導体装置 |
JP2010187005A (ja) * | 2010-03-30 | 2010-08-26 | Fujitsu Semiconductor Ltd | 複数の配線層を有する半導体回路の端子層設定に用いられる端子延長用コンポーネント |
JP2012054502A (ja) * | 2010-09-03 | 2012-03-15 | Elpida Memory Inc | 半導体装置 |
JP2013008926A (ja) * | 2011-06-27 | 2013-01-10 | Fujitsu Semiconductor Ltd | レイアウト方法及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN113853742A (zh) | 2021-12-28 |
WO2020235465A1 (ja) | 2020-11-26 |
JP7144609B2 (ja) | 2022-09-29 |
US20220221891A1 (en) | 2022-07-14 |
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