JPWO2020203360A1 - - Google Patents

Info

Publication number
JPWO2020203360A1
JPWO2020203360A1 JP2021511451A JP2021511451A JPWO2020203360A1 JP WO2020203360 A1 JPWO2020203360 A1 JP WO2020203360A1 JP 2021511451 A JP2021511451 A JP 2021511451A JP 2021511451 A JP2021511451 A JP 2021511451A JP WO2020203360 A1 JPWO2020203360 A1 JP WO2020203360A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021511451A
Other versions
JP7186284B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020203360A1 publication Critical patent/JPWO2020203360A1/ja
Application granted granted Critical
Publication of JP7186284B2 publication Critical patent/JP7186284B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP2021511451A 2019-03-29 2020-03-19 太陽電池の製造方法 Active JP7186284B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019066613 2019-03-29
JP2019066613 2019-03-29
PCT/JP2020/012360 WO2020203360A1 (ja) 2019-03-29 2020-03-19 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPWO2020203360A1 true JPWO2020203360A1 (ja) 2020-10-08
JP7186284B2 JP7186284B2 (ja) 2022-12-08

Family

ID=72667990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021511451A Active JP7186284B2 (ja) 2019-03-29 2020-03-19 太陽電池の製造方法

Country Status (3)

Country Link
JP (1) JP7186284B2 (ja)
CN (1) CN113632245B (ja)
WO (1) WO2020203360A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010015040A (ja) * 2008-07-04 2010-01-21 Tokyo Ohka Kogyo Co Ltd リンス液及びリフトオフ用レジストパターンの形成方法
JP2014158017A (ja) * 2013-01-16 2014-08-28 Sharp Corp 光電変換素子および光電変換素子の製造方法
WO2015060013A1 (ja) * 2013-10-25 2015-04-30 シャープ株式会社 光電変換素子
WO2015118935A1 (ja) * 2014-02-10 2015-08-13 シャープ株式会社 光電変換素子およびそれを備えた太陽電池モジュール
WO2019059765A1 (en) * 2017-09-22 2019-03-28 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno BACK CONTACT SOLAR CELL P-TYPE CONDUCTIVITY INTERDIGITANCE

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014075526A (ja) * 2012-10-05 2014-04-24 Sharp Corp 光電変換素子および光電変換素子の製造方法
NL2010496C2 (en) * 2013-03-21 2014-09-24 Stichting Energie Solar cell and method for manufacturing such a solar cell.
CN107408599B (zh) * 2015-03-24 2020-11-27 松下知识产权经营株式会社 太阳能电池单元的制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010015040A (ja) * 2008-07-04 2010-01-21 Tokyo Ohka Kogyo Co Ltd リンス液及びリフトオフ用レジストパターンの形成方法
JP2014158017A (ja) * 2013-01-16 2014-08-28 Sharp Corp 光電変換素子および光電変換素子の製造方法
WO2015060013A1 (ja) * 2013-10-25 2015-04-30 シャープ株式会社 光電変換素子
WO2015118935A1 (ja) * 2014-02-10 2015-08-13 シャープ株式会社 光電変換素子およびそれを備えた太陽電池モジュール
WO2019059765A1 (en) * 2017-09-22 2019-03-28 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno BACK CONTACT SOLAR CELL P-TYPE CONDUCTIVITY INTERDIGITANCE

Also Published As

Publication number Publication date
JP7186284B2 (ja) 2022-12-08
CN113632245A (zh) 2021-11-09
CN113632245B (zh) 2023-10-13
WO2020203360A1 (ja) 2020-10-08

Similar Documents

Publication Publication Date Title
BR112019017762A2 (ja)
BR112021017339A2 (ja)
BR112021013854A2 (ja)
BR112021018450A2 (ja)
BR112019016141A2 (ja)
AU2020104490A4 (ja)
BR112019016142A2 (ja)
BR112019016138A2 (ja)
BR112021018168A2 (ja)
BR112021017234A2 (ja)
BR112021017173A2 (ja)
BR112021017083A2 (ja)
BR112021008711A2 (ja)
BR112021018452A2 (ja)
BR112021012348A2 (ja)
BR112021018250A2 (ja)
BR112021013944A2 (ja)
BR112021013128A2 (ja)
BR112021018484A2 (ja)
BR112021015080A2 (ja)
BR112021016205A2 (ja)
BR112021016996A2 (ja)
BR112021017010A2 (ja)
AT524962A5 (ja)
BR112019016136A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220916

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221101

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221128

R150 Certificate of patent or registration of utility model

Ref document number: 7186284

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150