JPWO2020171131A1 - - Google Patents

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Publication number
JPWO2020171131A1
JPWO2020171131A1 JP2021502099A JP2021502099A JPWO2020171131A1 JP WO2020171131 A1 JPWO2020171131 A1 JP WO2020171131A1 JP 2021502099 A JP2021502099 A JP 2021502099A JP 2021502099 A JP2021502099 A JP 2021502099A JP WO2020171131 A1 JPWO2020171131 A1 JP WO2020171131A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021502099A
Other versions
JP7399499B2 (ja
JPWO2020171131A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed filed Critical
Publication of JPWO2020171131A1 publication Critical patent/JPWO2020171131A1/ja
Publication of JPWO2020171131A5 publication Critical patent/JPWO2020171131A5/ja
Application granted granted Critical
Publication of JP7399499B2 publication Critical patent/JP7399499B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2021502099A 2019-02-22 2020-02-19 有機半導体デバイス、有機半導体単結晶膜の製造方法、及び有機半導体デバイスの製造方法 Active JP7399499B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019030776 2019-02-22
JP2019030776 2019-02-22
PCT/JP2020/006597 WO2020171131A1 (ja) 2019-02-22 2020-02-19 有機半導体デバイス、有機半導体単結晶膜の製造方法、及び有機半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JPWO2020171131A1 true JPWO2020171131A1 (ja) 2020-08-27
JPWO2020171131A5 JPWO2020171131A5 (ja) 2022-02-01
JP7399499B2 JP7399499B2 (ja) 2023-12-18

Family

ID=72144044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021502099A Active JP7399499B2 (ja) 2019-02-22 2020-02-19 有機半導体デバイス、有機半導体単結晶膜の製造方法、及び有機半導体デバイスの製造方法

Country Status (6)

Country Link
US (1) US20220140265A1 (ja)
EP (1) EP3930018A4 (ja)
JP (1) JP7399499B2 (ja)
KR (1) KR20210126020A (ja)
CN (1) CN113454800A (ja)
WO (1) WO2020171131A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022130245A (ja) * 2021-02-25 2022-09-06 国立大学法人 東京大学 無機／有機ハイブリッド相補型半導体デバイス及びその製造方法
CN116546824A (zh) * 2022-05-07 2023-08-04 浙江大学 一种有机场效应晶体管及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053265A (ja) * 2006-08-22 2008-03-06 Postech Foundation 表面誘導自己集合による単結晶共役高分子ナノ構造体の製造方法
JP2013173082A (ja) * 2012-02-23 2013-09-05 Saitama Univ 有機薄膜の成膜方法とそれを用いて形成した太陽電池
JP2014049722A (ja) * 2012-09-04 2014-03-17 Nec Corp 有機半導体トランジスタおよびその製造方法
WO2014175351A1 (ja) * 2013-04-25 2014-10-30 国立大学法人大阪大学 有機半導体薄膜の製造方法
WO2016121791A1 (ja) * 2015-01-29 2016-08-04 国立大学法人東京大学 有機半導体素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6590361B2 (ja) 2014-03-20 2019-10-16 パイクリスタル株式会社 有機半導体膜及びその製造方法
CN104022221A (zh) * 2014-06-20 2014-09-03 国家纳米科学中心 一种超薄大尺寸有机小分子单晶片层及其高质量底栅顶接触场效应晶体管的制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053265A (ja) * 2006-08-22 2008-03-06 Postech Foundation 表面誘導自己集合による単結晶共役高分子ナノ構造体の製造方法
JP2013173082A (ja) * 2012-02-23 2013-09-05 Saitama Univ 有機薄膜の成膜方法とそれを用いて形成した太陽電池
JP2014049722A (ja) * 2012-09-04 2014-03-17 Nec Corp 有機半導体トランジスタおよびその製造方法
WO2014175351A1 (ja) * 2013-04-25 2014-10-30 国立大学法人大阪大学 有機半導体薄膜の製造方法
WO2016121791A1 (ja) * 2015-01-29 2016-08-04 国立大学法人東京大学 有機半導体素子

Also Published As

Publication number Publication date
JP7399499B2 (ja) 2023-12-18
KR20210126020A (ko) 2021-10-19
US20220140265A1 (en) 2022-05-05
EP3930018A1 (en) 2021-12-29
WO2020171131A1 (ja) 2020-08-27
EP3930018A4 (en) 2022-11-09
CN113454800A (zh) 2021-09-28

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