JPWO2020138864A5 - - Google Patents

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Publication number
JPWO2020138864A5
JPWO2020138864A5 JP2021536704A JP2021536704A JPWO2020138864A5 JP WO2020138864 A5 JPWO2020138864 A5 JP WO2020138864A5 JP 2021536704 A JP2021536704 A JP 2021536704A JP 2021536704 A JP2021536704 A JP 2021536704A JP WO2020138864 A5 JPWO2020138864 A5 JP WO2020138864A5
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JP
Japan
Prior art keywords
layer
emitter
window
forming layer
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021536704A
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Japanese (ja)
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JP2022514968A (en
Publication date
Priority claimed from US16/720,634 external-priority patent/US11404848B2/en
Application filed filed Critical
Publication of JP2022514968A publication Critical patent/JP2022514968A/en
Publication of JPWO2020138864A5 publication Critical patent/JPWO2020138864A5/ja
Pending legal-status Critical Current

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Description

各エミッタは、図１、図２ａ及び図２ｂを参照して説明したように、下部ミラー２５、活性層２７、開口形成層２９、および上部ミラー３１を含む。また、開口形成層２９は、酸化層２９ｘとウィンドウ層２９ｗを含み、電流の流れは、ウィンドウ層２９ｗに限定される。各エミッタの基本構造は、イオン注入による絶縁領域３７を除けば、前述のエミッタ１５０と同一である。 Each emitter includes a bottom mirror 25, an active layer 27 , an aperture forming layer 29, and a top mirror 31 as described with reference to Figures 1, 2a and 2b. Also, the opening forming layer 29 includes an oxide layer 29x and a window layer 29w, and current flow is limited to the window layer 29w. The basic structure of each emitter is the same as the emitter 150 described above, except for the isolation region 37 by ion implantation.

JP2021536704A 2018-12-24 2019-12-20 Vertical cavity type surface emitting laser Pending JP2022514968A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862784616P 2018-12-24 2018-12-24
US62/784,616 2018-12-24
US16/720,634 US11404848B2 (en) 2018-12-24 2019-12-19 Vertical-cavity surface-emitting laser
US16/720,634 2019-12-19
PCT/KR2019/018212 WO2020138864A1 (en) 2018-12-24 2019-12-20 Vertical-cavity surface-emitting laser

Publications (2)

Publication Number Publication Date
JP2022514968A JP2022514968A (en) 2022-02-16
JPWO2020138864A5 true JPWO2020138864A5 (en) 2022-12-23

Family

ID=71098967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021536704A Pending JP2022514968A (en) 2018-12-24 2019-12-20 Vertical cavity type surface emitting laser

Country Status (6)

Country Link
US (3) US11404848B2 (en)
EP (1) EP3905459A4 (en)
JP (1) JP2022514968A (en)
KR (1) KR20210096073A (en)
CN (2) CN113228434A (en)
WO (1) WO2020138864A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404848B2 (en) * 2018-12-24 2022-08-02 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser
US11581705B2 (en) * 2019-04-08 2023-02-14 Lumentum Operations Llc Vertical-cavity surface-emitting laser with dense epi-side contacts
JP2021153136A (en) * 2020-03-24 2021-09-30 富士フイルムビジネスイノベーション株式会社 Light emitting component
US11831129B2 (en) * 2020-12-23 2023-11-28 Lumentum Operations Llc Vertical cavity surface emitting laser design with shorter oxidation length and/or larger number of trenches
CN113285353A (en) * 2021-07-23 2021-08-20 华芯半导体研究院(北京)有限公司 Method for reducing VIA windowing etching damage and VCSEL chip
US20230032341A1 (en) * 2021-07-27 2023-02-02 Fujifilm Business Innovation Corp. Light-emitting element array, optical device, optical measurement device, and method for manufacturing light-emitting element array

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US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
US6658040B1 (en) 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US7085301B2 (en) * 2002-07-12 2006-08-01 The Board Of Trustees Of The University Of Illinois Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US7433381B2 (en) * 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
CN1315234C (en) * 2004-02-17 2007-05-09 长春理工大学 Method for etching ring distributing holes on vertical cavity emission semiconductor laser
JP2006278662A (en) * 2005-03-29 2006-10-12 Nec Corp Optical source for optical communication
JP2008283028A (en) 2007-05-11 2008-11-20 Fuji Xerox Co Ltd Surface light emission type semiconductor laser, manufacturing method of the same, module, light source device, information processing apparatus, optical transmission apparatus, optical space transmission apparatus, and optical space transmission system
JP5381180B2 (en) * 2009-03-10 2014-01-08 富士ゼロックス株式会社 Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmitter, and information processing apparatus
CN101510666A (en) * 2009-04-07 2009-08-19 中国科学院长春光学精密机械与物理研究所 Method for etching non-closed annular groove of preparation of vertical cavity surface emission semiconductor laser
US10749312B2 (en) * 2015-05-28 2020-08-18 Vixar, Inc. VCSELs and VCSEL arrays designed for improved performance as illumination sources and sensors
US9742153B1 (en) 2016-02-23 2017-08-22 Lumentum Operations Llc Compact emitter design for a vertical-cavity surface-emitting laser
US9917419B2 (en) * 2016-06-26 2018-03-13 Vi Systems Gmbh Low capacitance optoelectronic device
US9929536B1 (en) * 2017-06-15 2018-03-27 Truelight Corporation Structure of VCSEL and method for manufacturing the same
US10666020B2 (en) * 2017-09-20 2020-05-26 Lumentum Operations Llc Reconfigurable emitter array
US11404848B2 (en) * 2018-12-24 2022-08-02 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser

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