CN1315234C - Method for etching ring distributing holes on vertical cavity emission semiconductor laser - Google Patents
Method for etching ring distributing holes on vertical cavity emission semiconductor laser Download PDFInfo
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- CN1315234C CN1315234C CNB2004100043573A CN200410004357A CN1315234C CN 1315234 C CN1315234 C CN 1315234C CN B2004100043573 A CNB2004100043573 A CN B2004100043573A CN 200410004357 A CN200410004357 A CN 200410004357A CN 1315234 C CN1315234 C CN 1315234C
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- semiconductor laser
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Abstract
The present invention relates to a method for etching annular distribution holes in making an emission semiconductor laser with the vertical cavity surface, which belongs to the technical field of making an electrode of the semiconductor laser. The relevant the prior art is a method for etching annular grooves. Main problems existing in the technology are that because polyimide is finally used for filling in the annular grooves, the heat dispersion of the made laser is poor. The present invention adopts the method for etching the annular distribution holes, namely that a plurality of holes which are annularly distributed and are isolated with each other are etched at positions of the originally etched annular grooves, the technology of a limit layer of an oxide can be completed likewise through the holes, and the holes do not need filling afterward. Bridge-shaped passages among adjacent holes make the parts of the circular table surface of the laser still maintain connective states, and still form the continuous plane used for the vapor deposition of the electrode on the laser with the connective surface and the table surface of a bonding pad. The present invention is mainly applied to the manufacture field of the emission semiconductor laser with the vertical cavity surface.
Description
Technical field
The invention belongs to semiconductor laser manufacturing technology field, can further be divided into semiconductor laser electrode manufacture technology field.
Background technology
" IEEE PHOTONICS TECHNOLOGY LETTERS " the 9th volume the 9th phase the 1196th a page of step of having introduced in a kind of vertical-cavity-face emitting semiconductor laser electrode manufacturing process of publishing in September, 1997, we are called etching ring-shaped groove method, see shown in Figure 1, be ring-shaped groove 1 between two empty concentric circless among the figure, it is the continuous raceway groove of a kind of annular, is positioned at the peripheral annular zone of laser round platform table top 4.After having made the oxide limiting layer by it, this ring-shaped groove is filled with polyimides or other similar material through the diauxic growth operation, make bonding pad table 2, joint face 3 become a continuous level with laser round platform table top 4, the laser top electrode resistivity of making on this plane is lower.Light hole 5 is positioned at the central circular of laser round platform table top 4.From the electric current of pad straight in the injection laser resonant cavity.
Summary of the invention
Have a strong impact on the laser heat radiation at ring-shaped groove 1 filled polyimide.Simultaneously, also make the production of this device have more one procedure.Growth is reunited also will do after the acid imide and is polished processing.And, in this road growth operation, bring certain destruction can for inevitably the laser structure that has formed.In order to eliminate these counter productives, we have invented etching annular distributing hole method in a kind of preparation of vertical cavity surface emission semiconductor laser.
The present invention realizes like this, see Fig. 2, in laser round platform table top 4 peripheral annular zones, along former several annular spread of ring-shaped groove 1 central axis 6 etchings, isolated hole 7 each other, the ring-shaped groove 1 that replaces the prior art etching, being centered close on the axis 6 of these holes, its degree of depth is identical with the degree of depth of former ring-shaped groove 1.Table top between the Kong Yukong partly becomes bridge shape passage 8.Can finish oxide limiting layer production process equally via these holes, form the laser resonant cavity aperture of sub-circular.And, keep these holes.Bridge shape passage 8 between each adjacent holes 7 makes laser round platform table top 4 each several parts still keep connection status, still forms a continuous level that supplies evaporation laser top electrode to use with joint face 3, bonding pad table 2.
This shows that the present invention need not be through diauxic growth operation growth packed layer, all porous 7 that remain can realize the good heat radiating of laser, have overcome the deficiency of prior art fully.
Description of drawings
Fig. 1 is the etching ring-shaped groove method schematic diagram of prior art.Fig. 2 is the present invention's an etching annular distributing hole method schematic diagram.
Fig. 3 is the present invention's an etching annular spread scallop hole method schematic diagram.Fig. 4 is the present invention's an etching annular spread crescent hole method schematic diagram.
Embodiment
If the diameter of laser round platform table top 4 is 100 μ m, the diameter of light hole 5 is 10 μ m, and the diameter of axis 6 is 70 μ m, and hole 7 is a circular hole, and diameter is 15 μ m, equates with the width of original ring-shaped groove 1.Adopt the reactive ion etching method along 12 holes 7 of the equidistant etching of axis, about between the circumference of each adjacent holes 7 at a distance of 2 μ m.The end in hole 7, is between oxide limiting layer and active layer.Adopt wet oxidation, form selective oxidation thing limiting layer by each hole 7 at original algaas layer that contains 98% aluminium, these partial restriction layers link to each other after continuing expansion, form the aperture of sub-circular, along with further expansion forms needed aperture, this operation finishes.At last, evaporation laser top electrode on the continuous level that bonding pad table 2, joint face 3 and laser round platform table top 4 (containing each bridge shape passage 8 part) are formed.
Adopt the present invention's method to bring a new problem, promptly when electron stream through top electrode, when light hole 5 injects in laser resonant cavity, it can flow outside the gallium arsenic course laser resonant cavity below bridge shape passage 8, the gallium arsenic course pad that especially can continue below joint face 3 flows, and causes severe attrition.For addressing this problem, can adopt proton bombardment technology, the gallium arsenic layer crystal lattice structure below the joint face 3 is destroyed to stop this electron stream.
In addition, hole 7 also can be scallop hole or crescent hole, sees Fig. 3, shown in Figure 4 respectively.Compare with circular port, generate oxide limiting layer, the more approaching circle in the aperture of Xing Chenging at last by scallop hole 9 or crescent hole 10.
Claims (1)
1, a kind ofly in the vertical-cavity-face emitting semiconductor laser manufacture process, make relevant lithographic method with the laser top electrode, in laser round platform table top (4) peripheral annular zone, the laser round platform is carried out etching, be etched to the oxide limiting layer between the active layer, again through oxidation step, generate the oxide limiting layer, the final laser resonant cavity aperture that forms, the a plurality of annular spread of etching, Gu Li hole (7) each other, table top between the Kong Yukong partly becomes bridge shape passage (8), after finishing oxide limiting layer step, can be by bonding pad table (2), joint face (3) and comprise evaporation laser top electrode on the continuous level that the laser round platform table top (4) of a plurality of bridge shape passages (8) forms, it is characterized in that, adopt the proton bombardment method to destroy the following gallium arsenic layer crystal lattice structure of joint face (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100043573A CN1315234C (en) | 2004-02-17 | 2004-02-17 | Method for etching ring distributing holes on vertical cavity emission semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100043573A CN1315234C (en) | 2004-02-17 | 2004-02-17 | Method for etching ring distributing holes on vertical cavity emission semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1560969A CN1560969A (en) | 2005-01-05 |
| CN1315234C true CN1315234C (en) | 2007-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100043573A Expired - Fee Related CN1315234C (en) | 2004-02-17 | 2004-02-17 | Method for etching ring distributing holes on vertical cavity emission semiconductor laser |
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| CN (1) | CN1315234C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100456584C (en) * | 2006-08-02 | 2009-01-28 | 长春理工大学 | Multi-core electric filling structure for large out light hole vertical cavity surface emitting semiconductor laser |
| CN102801107B (en) * | 2012-08-08 | 2014-07-09 | 中国科学院长春光学精密机械与物理研究所 | Vertical-cavity surface-emitting laser and manufacturing method thereof |
| CN108598866B (en) * | 2018-05-21 | 2020-02-14 | 湖北光安伦科技有限公司 | VCSEL chip array structure and manufacturing method thereof |
| US11404848B2 (en) * | 2018-12-24 | 2022-08-02 | Seoul Viosys Co., Ltd. | Vertical-cavity surface-emitting laser |
| CN112290383A (en) * | 2020-12-30 | 2021-01-29 | 江西铭德半导体科技有限公司 | VCSEL chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697597A (en) * | 1992-09-11 | 1994-04-08 | Toshiba Corp | Surface emitting type semiconductor laser with photodetector |
| JP2003249719A (en) * | 2002-02-26 | 2003-09-05 | Toshiba Corp | Surface emitting semiconductor light emitting element |
| US6678307B2 (en) * | 2001-09-28 | 2004-01-13 | Kabushiki Kaisha Toshiba | Semiconductor surface light-emitting device |
| CN1614836A (en) * | 2003-11-06 | 2005-05-11 | 株式会社东芝 | Surface luminous semiconductor device and its manufacture |
-
2004
- 2004-02-17 CN CNB2004100043573A patent/CN1315234C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697597A (en) * | 1992-09-11 | 1994-04-08 | Toshiba Corp | Surface emitting type semiconductor laser with photodetector |
| US6678307B2 (en) * | 2001-09-28 | 2004-01-13 | Kabushiki Kaisha Toshiba | Semiconductor surface light-emitting device |
| JP2003249719A (en) * | 2002-02-26 | 2003-09-05 | Toshiba Corp | Surface emitting semiconductor light emitting element |
| CN1614836A (en) * | 2003-11-06 | 2005-05-11 | 株式会社东芝 | Surface luminous semiconductor device and its manufacture |
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| CN1560969A (en) | 2005-01-05 |
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