CN100456584C - Multi-core electric filling structure for large out light hole vertical cavity surface emitting semiconductor laser - Google Patents
Multi-core electric filling structure for large out light hole vertical cavity surface emitting semiconductor laser Download PDFInfo
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- CN100456584C CN100456584C CNB2006101041502A CN200610104150A CN100456584C CN 100456584 C CN100456584 C CN 100456584C CN B2006101041502 A CNB2006101041502 A CN B2006101041502A CN 200610104150 A CN200610104150 A CN 200610104150A CN 100456584 C CN100456584 C CN 100456584C
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Abstract
A multi - core electricity implanting structure of light outgoing hole vertical cavity surface transmitting semiconductor laser belongs to semiconductor laser technology field. Said invented multi - core electricity implanting structure is located high aluminum layer in Bragg reflection mirror, number of separated current injection zone uniformly distributed in the area enclosed by annular groove and two-sided oxide restricted zone, these separated current injection zone divided by plurality of cavity and surrounding oxide restricted zone, thereby avoiding or reducing adverse effect to device performance service life duo to increasing light outgoing aperture or adopting short burst driving for raising device power. The present invention can be used in semiconductor laser education, research and area of production.
Description
Technical field
The present invention relates to a kind of electric filling structure of vertical-cavity-face emitting semiconductor laser, belong to the semiconductor laser device technical field.
Background technology
In the process of making vertical-cavity-face emitting semiconductor laser, referring to Fig. 1, at mesa edge etching ring-shaped groove 1, through peroxidating, high aluminium lamination in Bragg mirror closes on the groove two side portions and forms oxide restricted area 2, and mid portion becomes light hole 3, and the light hole 3 of vertical-cavity-face emitting semiconductor laser also is the injection region of electric current simultaneously.In order to improve power, the general method that adds the large out light hole footpath that adopts.Because the charge carrier building-up effect appears during greater than 10 microns in the bright dipping aperture of light hole 3 easily, and in order to obtain higher laser power, usually the hundreds of micron is reached in the bright dipping aperture, so just, caused each point current strength difference in the light hole 3, will cause non-uniform light in the hole, and can cause local overheatings in the light hole 3 and influence life-span of laser.In addition, especially need to obtain instantaneous high power under many circumstances, thereby a lot of high-power semiconductor laser adopts the type of drive of short pulse.Because the spike width of short pulse is very narrow, rising edge and falling edge have abundant high fdrequency component, and under high frequency situations, electric current is tending towards conductive surface, and skin effect (skin effect) takes place.This effect is particularly outstanding in large size conductor.For large out light hole vertical cavity surface emitting semiconductor laser, the injection region sectional area of pulse current is bigger, under the effect of skin effect, electric current is tending towards the outside of light hole 3, cause so again and the uneven situation of injection current intensity in large out light hole 3, occurs, further cause light hole outside local current excessive and the phenomenon of local overheating occurs, it is big finally to show as light hole outside light intensity, light hole is little or not luminous near the circle centre position light intensity, therefore, all very unfavorable to the performance and the life-span of laser.This shows that no matter the uneven phenomenon of injection current intensity all can appear in DC driven or pulsed drive in the large out light hole vertical cavity semiconductor laser.
Summary of the invention
In order to eliminate the deficiency that known technology exists, promptly when strengthening vertical-cavity-face emitting semiconductor laser bright dipping aperture, adopting the mode of short pulse driving, perhaps only when strengthening vertical-cavity-face emitting semiconductor laser bright dipping aperture, realize the even distribution of injection current intensity, we have invented a kind of multi-core electric filling structure of large out light hole vertical cavity surface emitting semiconductor laser.
The present invention is achieved in that the multi-core electric filling structure of large out light hole vertical cavity surface emitting semiconductor laser is arranged in the high aluminium lamination of Bragg mirror; Several discrete current injection areas evenly distribute in 2 area surrounded in the oxide restricted area of ring-shaped groove 1 and both sides thereof; These discrete current injection areas are separated by the oxide restricted area that is distributed in many grooves in this zone and both sides thereof or a plurality of hole and oxide restricted area on every side thereof; The end in groove, hole, is the same with the end of ring-shaped groove 1, on depth direction all through described high aluminium lamination; Oxide restricted area around groove both sides, the hole is the same with the oxide restricted area 2 of ring-shaped groove 1 both sides, all is in described high alumina face layer by layer; Oxide restricted area around the hole is connected with each other.
According to technique scheme, in the vertical-cavity-face emitting semiconductor laser current injection area, form some independently discrete current injection areas, they evenly distribute, and are independently of one another, thereby form the multi-core electric filling structure of large out light hole.Each discrete current injection area be one independently current injection area also be an independently luminous zone.Making as a whole original current injection area is broken the whole up into parts this moment, so can be in the aperture that keeps original large out light hole, even can when continuing to increase considerably original large out light hole footpath, eliminate the injection current intensity phenomenon pockety on the whole that known technology exists.Such as, the large out light hole aperture can be accomplished 1000 microns, and discrete current injection area aperture can be below 10 microns.Like this, at first, the injection current intensity distributions of each the discrete current injection area injection current intensity distributions than original current injection area naturally is much even; Secondly, because discrete current injection area is uniformly distributed in original current injection area, so from original current injection area scale, the distribution of current strength has also become evenly.Thereby the charge carrier building-up effect is eliminated in current injection area substantially.In addition, although the irregular phenomenon of injection current intensity distributions that produces because of skin effect still can occur in discrete current injection area, but, because of discrete current injection area yardstick very little, and each discrete current injection area is evenly distributed in the original current injection area, so skin effect is also weakened on the whole.Make that generally speaking the injection current intensity distributions of large out light hole is even, luminous intensity is also even.In addition, though dividing groove, hole and oxide restricted area have occupied large-area current injection area, but, help the heat radiation of device, in addition, the present invention's semiconductor laser bright dipping aperture can be more much bigger than existing semiconductor laser bright dipping aperture, the former can reach 1000 microns, the latter is generally the hundreds of micron, and, its central area still can not be effectively luminous, and the not only some discrete current injection area sums of the present invention can be greater than original current injection area, and original can not all the utilization in effectively luminous zone.Can realize improving the purpose of the power of semiconductor laser by the measure that adds the large out light hole footpath.This shows the adverse effect that the present invention overcomes or weakened charge carrier building-up effect and skin effect are brought to large out light hole vertical cavity surface emitting semiconductor laser.
Description of drawings
Fig. 1 is the electric filling structure schematic diagram of known technology large out light hole vertical cavity surface emitting semiconductor laser.Fig. 2 is the fenestral fabric schematic diagram that is formed by groove in the present invention's the multi-core electric filling structure.This figure double as Figure of abstract.Fig. 3 is the concentric ring-shaped structural representation that is formed by groove in the present invention's the multi-core electric filling structure.Fig. 4 is the alveolate texture schematic diagram that is formed by the hole in the present invention's the multi-core electric filling structure.Fig. 5 is the fenestral fabric schematic diagram that is formed by the hole in the present invention's the multi-core electric filling structure.
Embodiment
Embodiment 1: see shown in Figure 2ly, the multi-core electric filling structure of large out light hole vertical cavity surface emitting semiconductor laser is arranged in the high aluminium lamination of Bragg mirror; Several discrete current injection areas 4 evenly distribute in 2 area surrounded in the oxide restricted area of ring-shaped groove 1 and both sides thereof; These discrete current injection areas 4 are separated by being distributed in many straight-line grooves 5 in this zone and the oxide restricted area 6 of both sides thereof; The end of straight-line groove 5, is the same with the end of ring-shaped groove 1, on depth direction all through described high aluminium lamination; The oxide restricted area 6 of straight-line groove 5 both sides is the same with the oxide restricted area 2 of ring-shaped groove 1 both sides, all is in described high alumina face layer by layer; It is latticed that the oxide restricted area 6 of these straight-line grooves 5 and both sides thereof is the field with "nine squares"; These current injection areas 4 are by latticed even distribution.
Embodiment 3: see shown in Figure 4ly, the multi-core electric filling structure of large out light hole vertical cavity surface emitting semiconductor laser is arranged in the high aluminium lamination of Bragg mirror; Several discrete current injection areas 10 evenly distribute in 2 area surrounded 3 in the oxide restricted area of ring-shaped groove 1 and both sides thereof; These discrete current injection areas 10 are separated by being distributed in a plurality of holes 11 in this zone 3 and oxide restricted area 12 on every side thereof; The end in hole 11, is the same with the end of ring-shaped groove 1, on depth direction all through described high aluminium lamination; Oxide restricted area 12 around the hole 11 is the same with the oxide restricted area 2 of ring-shaped groove 1 both sides, all is in described high alumina face layer by layer, and is connected with each other; These holes 11 and oxide restricted area 12 on every side thereof are cellular; These discrete current injection areas 10 are by cellular even distribution.
Embodiment 4: see shown in Figure 5ly, the multi-core electric filling structure of large out light hole vertical cavity surface emitting semiconductor laser is arranged in the high aluminium lamination of Bragg mirror; Several discrete current injection areas 13 evenly distribute in 2 area surrounded 3 in the oxide restricted area of ring-shaped groove 1 and both sides thereof; These discrete current injection areas 13 are separated by being distributed in this zone 3 a plurality of holes 14 and oxide restricted area 15 on every side thereof; The end in hole 14, is the same with the end of ring-shaped groove 1, on depth direction all through described high aluminium lamination; Oxide restricted area 15 around the hole 14 is the same with the oxide restricted area 2 of ring-shaped groove 1 both sides, all is in described high alumina face layer by layer, and is connected with each other; It is latticed that these holes 14 and oxide restricted area 15 on every side thereof are array; These discrete current injection areas 13 are by the latticed even distribution of array.
Claims (1)
1, a kind of multi-core electric filling structure of large out light hole vertical cavity surface emitting semiconductor laser, be arranged in the high aluminium lamination of Bragg mirror, and be in oxide restricted area (2) the institute area surrounded of ring-shaped groove (1) and both sides thereof, the end of ring-shaped groove (1), see through described high aluminium lamination on depth direction, the oxide restricted area (2) of its both sides is in described high alumina face layer by layer, and several discrete current injection areas evenly distribute in described zone; These discrete current injection areas are separated by being distributed in many grooves in this zone and the oxide restricted area of both sides thereof; The end of the same ring-shaped groove in the end of groove (1) on depth direction all through described high aluminium lamination; The oxide restricted area (2) of the same ring-shaped groove in oxide restricted area (1) both sides of groove both sides all is in described high alumina face layer by layer; It is characterized in that, described groove is current injection area ring-shaped groove (8), the current injection area oxide restricted area (9) of these current injection area ring-shaped grooves (8) and both sides thereof is concentric ring-shaped, the annular that some discrete current injection areas (7) have nothing in common with each other for bore, they evenly distribute by concentric ring-shaped.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101041502A CN100456584C (en) | 2006-08-02 | 2006-08-02 | Multi-core electric filling structure for large out light hole vertical cavity surface emitting semiconductor laser |
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| CNB2006101041502A CN100456584C (en) | 2006-08-02 | 2006-08-02 | Multi-core electric filling structure for large out light hole vertical cavity surface emitting semiconductor laser |
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| CN100456584C true CN100456584C (en) | 2009-01-28 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9742153B1 (en) | 2016-02-23 | 2017-08-22 | Lumentum Operations Llc | Compact emitter design for a vertical-cavity surface-emitting laser |
| US10170889B1 (en) * | 2017-08-14 | 2019-01-01 | Lumentum Operations Llc | Controlling uniformity of lateral oxidation of wafer surface features using a vertical stack of horizontal wafers |
| KR102171733B1 (en) * | 2018-04-02 | 2020-10-29 | 주식회사 레이아이알 | Vertical Cavity Surface Emitting Lasers |
| CN109326957A (en) * | 2019-01-02 | 2019-02-12 | 常州纵慧芯光半导体科技有限公司 | The integrated high-power vertical cavity surface emitting laser in luminous zone |
| CN109326958A (en) * | 2019-01-02 | 2019-02-12 | 常州纵慧芯光半导体科技有限公司 | The high-power vertical cavity surface emitting laser of metal grill |
| CN116387980B (en) * | 2023-06-07 | 2023-08-25 | 深圳市柠檬光子科技有限公司 | Vertical cavity surface emitting laser and electronic device |
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