JPWO2020089762A1 - - Google Patents
Info
- Publication number
- JPWO2020089762A1 JPWO2020089762A1 JP2020554607A JP2020554607A JPWO2020089762A1 JP WO2020089762 A1 JPWO2020089762 A1 JP WO2020089762A1 JP 2020554607 A JP2020554607 A JP 2020554607A JP 2020554607 A JP2020554607 A JP 2020554607A JP WO2020089762 A1 JPWO2020089762 A1 JP WO2020089762A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024106823A JP2024153637A (ja) | 2018-11-02 | 2024-07-02 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018207250 | 2018-11-02 | ||
| PCT/IB2019/059207 WO2020089762A1 (ja) | 2018-11-02 | 2019-10-28 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024106823A Division JP2024153637A (ja) | 2018-11-02 | 2024-07-02 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020089762A1 true JPWO2020089762A1 (https=) | 2020-05-07 |
| JPWO2020089762A5 JPWO2020089762A5 (https=) | 2022-10-31 |
Family
ID=70463997
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020554607A Withdrawn JPWO2020089762A1 (https=) | 2018-11-02 | 2019-10-28 | |
| JP2024106823A Pending JP2024153637A (ja) | 2018-11-02 | 2024-07-02 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024106823A Pending JP2024153637A (ja) | 2018-11-02 | 2024-07-02 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12100747B2 (https=) |
| JP (2) | JPWO2020089762A1 (https=) |
| WO (1) | WO2020089762A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102764319B1 (ko) * | 2020-09-02 | 2025-02-07 | 삼성전자주식회사 | 반도체 소자 및 이를 포함하는 반도체 장치 |
| CN115769293A (zh) * | 2021-06-25 | 2023-03-07 | 京东方科技集团股份有限公司 | 驱动基板、发光装置及其制备方法、拼接显示装置 |
| KR20230097544A (ko) | 2021-12-24 | 2023-07-03 | 엘지디스플레이 주식회사 | 표시 장치 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007180480A (ja) * | 2005-12-28 | 2007-07-12 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法並びに多結晶シリコン薄膜トランジスタ |
| JP2015053478A (ja) * | 2013-08-07 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2015179822A (ja) * | 2014-02-05 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を用いた表示装置、該表示装置を用いた表示モジュール、並びに該半導体装置、該表示装置、及び該表示モジュールを用いた電子機器 |
| JP2015188079A (ja) * | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7019457B2 (en) | 2000-08-03 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having both electrodes formed on the insulating layer |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| US20040229051A1 (en) | 2003-05-15 | 2004-11-18 | General Electric Company | Multilayer coating package on flexible substrates for electro-optical devices |
| WO2011132591A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2012015436A (ja) | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| JP5668917B2 (ja) | 2010-11-05 | 2015-02-12 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| US8569754B2 (en) | 2010-11-05 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6104522B2 (ja) | 2011-06-10 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8772130B2 (en) | 2011-08-23 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
| US8748240B2 (en) | 2011-12-22 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8956912B2 (en) | 2012-01-26 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8916424B2 (en) | 2012-02-07 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5946318B2 (ja) * | 2012-05-02 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| JP6112886B2 (ja) * | 2013-02-01 | 2017-04-12 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板およびその製造方法 |
| CN106409919A (zh) * | 2015-07-30 | 2017-02-15 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JPWO2017085591A1 (ja) * | 2015-11-20 | 2018-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器 |
| US9954058B1 (en) * | 2017-06-12 | 2018-04-24 | International Business Machines Corporation | Self-aligned air gap spacer for nanosheet CMOS devices |
-
2019
- 2019-10-28 WO PCT/IB2019/059207 patent/WO2020089762A1/ja not_active Ceased
- 2019-10-28 US US17/286,530 patent/US12100747B2/en active Active
- 2019-10-28 JP JP2020554607A patent/JPWO2020089762A1/ja not_active Withdrawn
-
2024
- 2024-07-02 JP JP2024106823A patent/JP2024153637A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007180480A (ja) * | 2005-12-28 | 2007-07-12 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法並びに多結晶シリコン薄膜トランジスタ |
| JP2015053478A (ja) * | 2013-08-07 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2015179822A (ja) * | 2014-02-05 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を用いた表示装置、該表示装置を用いた表示モジュール、並びに該半導体装置、該表示装置、及び該表示モジュールを用いた電子機器 |
| JP2015188079A (ja) * | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12100747B2 (en) | 2024-09-24 |
| WO2020089762A1 (ja) | 2020-05-07 |
| US20210384314A1 (en) | 2021-12-09 |
| JP2024153637A (ja) | 2024-10-29 |
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