JPWO2020079997A1 - Solid-state image sensor and electronic equipment - Google Patents

Abstract

In a solid-state image sensor, the material forming the underfill portion is suppressed from flowing toward the pixel region side of the solid-state image sensor, and the distance between the opening end of the opening of the substrate and the pixel region can be shortened, so that the solid is solid. We will promote the miniaturization of image sensors and devices. The solid-state image sensor is provided with a solid-state image sensor having a pixel region, which is a light receiving region including a large number of pixels, on the surface side, which is one plate surface of the semiconductor substrate, and a solid-state image sensor, which is provided on the surface side of the solid-state image sensor. A substrate having an opening for passing light received in the pixel region and an underfill portion formed of a cured fluid and covering a connection portion for electrically connecting the solid-state image sensor and the substrate. The substrate includes, on the surface portion forming the opening, a groove portion for guiding the fluid forming the underfill portion in a direction away from the surface of the solid-state image sensor.

Description

The present technology relates to a solid-state image sensor and an electronic device.

A solid-state image sensor having an image sensor as a solid-state image sensor has a so-called flip-chip structure in which an image sensor and a substrate are electrically connected via a connection portion such as a bump which is a protruding terminal. There is. The substrate is, for example, a substrate formed of a material such as an organic material or ceramics provided with a wiring layer, electrodes, or the like, and has an opening for passing light received by the image sensor. A translucent member such as glass is provided on the side of the substrate opposite to the image sensor side so as to cover the opening of the substrate, and a package structure in which a hollow portion is formed on the light receiving surface side of the image sensor is configured.

In the flip chip structure, an underfill portion is provided between the substrate and the image sensor for the purpose of protecting or reinforcing a connection portion such as a bump. The underfill portion is, for example, a portion formed by curing a paste-like or liquid resin which is a fluid. The underfill portion includes a capillary flow type (capillary underfill) formed by flowing a liquid resin having a relatively low viscosity by using a capillary phenomenon.

In the flip-chip structure having an underfill portion, the uncured liquid resin (hereinafter referred to as “underfill material”) forming the underfill portion reaches the pixel region, which is the light receiving region of the image sensor, and the image sensor has an underfill portion. There is a problem that it adversely affects the characteristics. A technique for such a problem is disclosed in, for example, Patent Document 1.

In Patent Document 1, in order to prevent the underfill material from reaching the pixel region of the image sensor, an image of the opening end of the opening of the substrate is based on the size of the gap between the plate surfaces between the substrate and the image sensor. A technique for ensuring the dimension of the distance from the end of the pixel region of the sensor is disclosed. Further, in Patent Document 1, on the image sensor, an embankment portion or a groove portion is provided in a portion between the opening end portion of the opening portion of the substrate and the pixel region, that is, a portion in front of the pixel region in the flow of the underfill material. The configuration is disclosed in which the flow of the resin to the pixel region side is stopped by providing the above.

JP-A-2002-124654

Certainly, according to the conventional technique as disclosed in Patent Document 1, it is considered that the underfill material can be prevented from reaching the pixel region. However, according to the conventional technique, there are the following problems.

First, as described above, the technique for ensuring the dimension of the distance between the open end of the opening of the substrate and the end of the pixel area of the image sensor is based on the premise that the underfill material spreads toward the pixel area. It is to secure an area that allows for expansion. Therefore, such a technique hinders the miniaturization of the image sensor and the package structure. Further, as described above, the configuration in which the embankment portion or the groove portion is provided in the portion in front of the pixel region on the image sensor also hinders miniaturization because it is necessary to secure a space for providing the embankment portion or the groove portion in the image sensor. It becomes.

In recent years, image sensors have tended to be Staked Die, and so on, image sensor chips are becoming smaller. The miniaturization of the image sensor contributes to cost reduction. However, according to the prior art, it is difficult to bring the open end of the opening of the substrate close to the pixel area from the viewpoint of preventing the underfill material from reaching the pixel area, which is the reason why the image sensor is compact. It is a factor that hinders the conversion.

The object of the present technology is to prevent the material forming the underfill portion from flowing toward the pixel region side of the solid-state image sensor, and to shorten the distance between the opening end portion of the opening portion of the substrate and the pixel region. It is an object of the present invention to provide a solid-state image sensor and an electronic device capable of promoting miniaturization of the solid-state image sensor and the device.

The solid-state image sensor according to the present technology includes a solid-state image sensor having a pixel region which is a light receiving region including a large number of pixels on the surface side of one plate surface of the semiconductor substrate, and a solid-state image sensor on the surface side of the solid-state image sensor. An underfill formed of a substrate provided and having an opening for passing light received in the pixel region and a cured fluid, and covering a connection portion that electrically connects the solid-state image sensor and the substrate. The substrate is provided with a portion and a groove portion for guiding the fluid forming the underfill portion in a direction away from the surface of the solid-state image sensor on the surface portion forming the opening. be.

Another aspect of the solid-state image sensor according to the present technology is that in the solid-state image sensor, the groove is formed by a semi-cylindrical concave curved surface.

Another aspect of the solid-state image pickup device according to the present technology is that in the solid-state image pickup device, the groove portion narrows the opening width of the opening from the solid-state image sensor side to the opposite side in the plate thickness direction of the substrate. It is inclined to.

Another aspect of the solid-state image pickup device according to the present technology is that in the solid-state image pickup device, the groove portion widens the opening width of the opening from the solid-state image sensor side to the opposite side in the plate thickness direction of the substrate. It is inclined to.

The electronic device according to the present technology is provided with a solid-state image sensor having a pixel region, which is a light receiving region including a large number of pixels, on the surface side, which is one plate surface of the semiconductor substrate, and a solid-state image sensor, which is provided on the surface side of the solid-state image sensor. An underfill portion formed of a substrate having an opening for passing light received in the pixel region and a cured fluid, and covering a connection portion that electrically connects the solid-state image sensor and the substrate. The substrate is a solid-state image pickup device having a groove portion on a surface portion forming the opening portion for guiding a fluid forming the underfill portion in a direction away from the surface of the solid-state image pickup device. It is equipped with.

According to the present technology, it is possible to suppress the material forming the underfill portion from flowing toward the pixel region side of the solid-state image sensor, and to shorten the distance between the opening end portion of the opening portion of the substrate and the pixel region. This makes it possible to reduce the size of the solid-state image sensor and the device.

It is a perspective view which shows the structure of the solid-state image sensor which concerns on 1st Embodiment of this technique. It is a top view which shows the structure of the solid-state image sensor which concerns on 1st Embodiment of this technique. FIG. 2 is an end view of the cut portion along line AA in FIG. FIG. 2 is an end view of the cut portion along line BB in FIG. It is a perspective view which shows the structure of the substrate which concerns on 1st Embodiment of this technique. It is a top view which shows the structure of the substrate which concerns on 1st Embodiment of this technique. FIG. 6 is a cross-sectional view taken along the line CC in FIG. FIG. 6 is a cross-sectional view taken along the line DD in FIG. It is explanatory drawing about the manufacturing method of the solid-state image sensor which concerns on 1st Embodiment of this technique. It is explanatory drawing about the manufacturing method of the solid-state image sensor which concerns on 1st Embodiment of this technique. It is explanatory drawing about the manufacturing method of the solid-state image sensor which concerns on 1st Embodiment of this technique. It is explanatory drawing of the phenomenon which occurs in the structure of the comparative example with respect to this technique. It is a side end face sectional view which shows the structure of the solid-state image sensor which concerns on 2nd Embodiment of this technique. It is a top view which shows the structure of the substrate which concerns on 2nd Embodiment of this technique. FIG. 14 is a cross-sectional view taken along the line EE in FIG. It is a side end face cross-sectional view which shows the structure of the solid-state image sensor which concerns on 3rd Embodiment of this technique. It is a top view which shows the structure of the substrate which concerns on 3rd Embodiment of this technique. FIG. 17 is a cross-sectional view taken along the line FF in FIG. It is explanatory drawing about the action effect in the solid-state image sensor which concerns on 3rd Embodiment of this technique. It is a figure which shows the deformation example of the groove portion which the substrate which concerns on embodiment of this technique has. It is a figure which shows the deformation example of the groove portion which the substrate which concerns on embodiment of this technique has. It is a block diagram which shows the structural example of the electronic device provided with the solid-state image sensor which concerns on embodiment of this technique.

The present technology provides an underfill portion that covers a connection portion that electrically connects a solid-state image sensor and a substrate having an opening for passing light received by the solid-state image sensor. By devising the shape of the surface to be formed, it is intended to suppress the flow of the fluid forming the underfill portion toward the pixel region side of the solid-state image sensor.

Hereinafter, embodiments for carrying out the present technology (hereinafter referred to as “embodiments”) will be described with reference to the drawings. The embodiments will be described in the following order.
1. 1. Configuration example of the solid-state image sensor according to the first embodiment 2. 3. Method for manufacturing a solid-state image sensor according to the first embodiment. Configuration example of the solid-state image sensor according to the second embodiment 4. 5. Configuration example of the solid-state image sensor according to the third embodiment. Deformation example of the groove of the substrate 6. Configuration example of electronic device

<Structure example of the solid-state image sensor according to the first embodiment>
A configuration example of the solid-state image sensor 1 according to the first embodiment of the present technology will be described with reference to FIGS. 1 to 8. As shown in FIG. 1, the solid-state image sensor 1 is formed on an image sensor 2 as a solid-state image sensor, a substrate 3 on which an opening 4 for passing light received by the image sensor 2 is formed, and a substrate 3. It includes a glass 5 as a supported translucent member. Further, the solid-state image sensor 1 includes a metal bump 6 which is a connection portion for electrically connecting the image sensor 2 and the substrate 3, and an underfill portion 7 for covering the metal bump 6. In addition, in FIG. 1 and FIG. 2, for convenience, the glass 5 is shown by a chain double-dashed line.

The solid-state image sensor 1 has a so-called flip-chip structure in which an image sensor 2 and a substrate 3 are electrically connected via a plurality of metal bumps 6. The solid-state image sensor 1 mounts a glass 5 so as to cover the opening 4 on the side opposite to the image sensor 2 side of the substrate 3, and an internal space of the opening 4 of the substrate 3 between the image sensor 2 and the glass 5. It has a package structure having a cavity 8 which is a closed space including.

The image sensor 2 includes a silicon semiconductor substrate made of silicon (Si), which is an example of a semiconductor, and one plate surface side (upper side in FIG. 1) of the semiconductor substrate is a light receiving side. The image sensor 2 is a rectangular plate-shaped chip, and the plate surface on the light receiving side is the front surface 2a, and the plate surface on the opposite side is the back surface 2b. The image sensor 2 according to the present embodiment is a CMOS (Complementary Metal Oxide Semiconductor) type image sensor. However, the image sensor 2 may be a CCD (Charge Coupled Device) type image sensor.

Most of the image sensor 2 is composed of a semiconductor substrate, and an image sensor element is formed on the surface 2a side. The image sensor 2 has a pixel region 2c as a light receiving portion on the surface 2a side, which is a light receiving region including a large number of pixels formed in a predetermined arrangement such as a Bayer array, and is around the pixel region 2c. Let the area of be the peripheral area. The pixel region 2c includes an effective pixel region that generates, amplifies, and reads a signal charge by photoelectric conversion in each pixel.

The pixel in the pixel region 2c has a photodiode as a photoelectric conversion unit having a photoelectric conversion function, and a plurality of pixel transistors. The photodiode has a light receiving surface that receives light incident from the surface 2a side of the image sensor 2, and generates a signal charge of an amount corresponding to the amount of light (intensity) of the light incident on the light receiving surface. The plurality of pixel transistors include, for example, MOS transistors that are responsible for amplifying, transferring, selecting, and resetting the signal charges generated by the photodiode. Regarding the plurality of pixels, the photodiode and the transfer transistor constituting the plurality of unit pixels may have a shared pixel structure configured by sharing another pixel transistor.

On the surface 2a side of the image sensor 2, a color filter and an on-chip lens are attached to each pixel of the semiconductor substrate via an antireflection film made of an oxide film or the like, a flattening film formed of an organic material, or the like. Correspondingly formed. The light incident on the on-chip lens is received by the photodiode through a color filter, a flattening film, or the like.

As the configuration of the image sensor 2, for example, a front side illumination type in which a pixel region 2c is formed on the surface side of the semiconductor substrate, a photodiode or the like is arranged in reverse in order to improve the light transmittance. There are a back side illumination type in which the back surface side of the semiconductor substrate is the light receiving surface side, and a chip in which peripheral circuits of a pixel group are laminated. However, the image sensor 2 according to the present technology is not limited to those having these configurations.

The substrate 3 is provided on the surface 2a side with respect to the image sensor 2, and has an opening 4 for passing light received in the pixel region 2c of the image sensor 2. The substrate 3 has a rectangular plate-like outer shape as a whole, and has a front surface 3a which is one plate surface and a back surface 3b which is the other plate surface on the opposite side. The substrate 3 is, for example, a substrate formed of an organic material such as plastic or a material such as ceramics provided with a wiring layer, electrodes, or the like.

The substrate 3 is provided parallel to the image sensor 2 and has an opening 4 at the center of the plate surface. The opening 4 has a substantially rectangular opening shape corresponding to the rectangular outer shape of the substrate 3, and is formed in a penetrating shape from the front surface 3a to the back surface 3b of the substrate 3. Therefore, the substrate 3 has a frame-like shape as a whole, and the rectangular opening 4 is formed by the four side portions forming the frame shape. The opening 4 is formed by four inner side surface portions 10 having a substantially rectangular shape in a plan view.

With respect to such a substrate 3, the image sensor 2 is provided on the back surface 3b side of the substrate 3 with the light receiving surface facing the front surface 3a side of the substrate 3 from the opening 4. The image sensor 2 has an outer shape larger than that of the opening 4 of the substrate 3, and is provided so as to close the opening 4 from below with respect to the substrate 3. The opening 4 is formed so that the entire pixel region 2c of the image sensor 2 is located within the opening range of the opening 4 in a plan view.

That is, the pixel region 2c is formed as a rectangular region corresponding to the external shape of the image sensor 2 in a plan view, and in the plan view, each side forming the outer edge of the pixel region 2c forms an opening 4. It is located inside the inner side surface portion 10. In other words, in a plan view, the distance L1 between each inner side surface portion 10 forming the opening 4 and each side forming the outer edge of the pixel region 2c located in the opening 4 (see FIGS. 2 and 3). Exists.

The metal bump 6 is interposed between the front surface 2a of the image sensor 2 and the back surface 3b of the substrate 3, and electrically connects the image sensor 2 and the substrate 3 to each other. The metal bump 6 is a protruding terminal, and for example, an electrode formed on the front surface 2a of the image sensor 2 and a wiring layer formed on the back surface 3b of the substrate 3 are electrically connected. Due to the presence of the metal bump 6 between the image sensor 2 and the substrate 3, a gap is formed between the front surface 2a of the image sensor 2 and the back surface 3b of the substrate 3. The dimension L2 of this gap (see FIG. 3) is, for example, about 20 μm.

A plurality of metal bumps 6 are provided, for example, in an array so as to be arranged around the opening 4 at predetermined intervals according to the number of electrodes formed on the surface 2a of the image sensor 2. The metal bump 6 is, for example, an Au stud bump, a solder ball bump, an Au—Ag alloy bump, or the like. The metal bump 6 is covered with the underfill portion 7.

The underfill portion 7 is formed of a resin which is a cured fluid, and covers the metal bump 6 existing between the image sensor 2 and the substrate 3. The underfill portion 7 is formed so as to include a plurality of metal bumps 6 between the outer peripheral portion of the image sensor 2 and the inner peripheral portion around the opening 4 of the substrate 3, and the image sensor 2 and the substrate 3 It is a resin sealing part that seals the gap between the two. The underfill portion 7 is provided between the image sensor 2 and the substrate 3 in the flip chip structure for the purpose of protecting or reinforcing the connection portion by the metal bump 6 and the metal bump 6.

The underfill portion 7 is a liquid curable resin portion formed by curing a paste-like or liquid resin by baking or the like. In the present embodiment, the underfill portion 7 is a capillary flow type (capillary underfill) formed by flowing a liquid resin having a relatively low viscosity by using a capillary phenomenon.

As the material of the underfill portion 7, for example, a resin material used as a molding material is used. Specifically, as the material of the underfill portion 7, for example, a thermosetting resin such as an epoxy resin, a thermosetting resin in which a filler containing a silicon oxide as a main component is dispersed, or the like is used. ..

The liquid resin material (for example, thermosetting resin, hereinafter referred to as “underfill material”) to be the underfill portion 7 flows by the capillary phenomenon while being discharged from the nozzle of the dispenser, and is provided in an array. It is applied so as to cover the entire plurality of metal bumps 6 and fill the gap between the image sensor 2 and the substrate 3. As a result, in a plan view, the underfill portion 7 is formed in a rectangular frame-shaped region corresponding to the shape of the portion where the image sensor 2 and the substrate 3 overlap each other, that is, along the opening shape of the opening 4. ..

The underfill portion 7 has a portion protruding from the periphery of the metal bump 6 due to the surface tension of the underfill material, the wettability of the surface on which the underfill material flows, and the like. Specifically, the underfill portion 7 is formed from the interfaceted intervening portion 7a existing at the opposite portion between the front surface 2a of the image sensor 2 and the back surface 3b of the substrate 3 and the interfaceted intervening portion 7a to the outer peripheral side of the image sensor 2. It has an outer protruding portion 7b, which is a protruding portion.

The glass 5 is an example of a transparent member, and is a rectangular plate-shaped member smaller than the substrate 3. By being provided on the substrate 3, the glass 5 is provided on the light receiving side of the image sensor 2 in parallel with the image sensor 2 and at a predetermined interval. The glass 5 is fixed to the surface 3a of the substrate 3 with an adhesive or the like.

The glass 5 is provided so as to cover the entire opening 4 from above with respect to the substrate 3. Therefore, the glass 5 has an external dimension larger than the opening dimension of the opening 4. As described above, the glass 5 is provided above the image sensor 2 so as to face the surface 2a of the image sensor 2 through the opening 4 of the substrate 3.

The glass 5 transmits various types of light incident from an optical system such as a lens located above the glass 5, and transmits the light to the light receiving surface of the image sensor 2 through the cavity 8. The glass 5 has a function of protecting the light receiving surface side of the image sensor 2, and together with the substrate 3 and the underfill portion 7, blocks the intrusion of moisture (water vapor), dust, etc. from the outside into the cavity 8. Has the function of Instead of the glass 5, for example, a plastic plate, a silicon plate that transmits only infrared light, or the like can be used.

In the solid-state image sensor 1 having the above configuration, the light transmitted through the glass 5 passes through the cavity 8 and is received by the light receiving element constituting each pixel arranged in the pixel region 2c of the image sensor 2. Is detected.

As described above, the flip-chip structure solid-state image sensor 1 having the underfill portion 7 has the following configuration in order to control the flow of the underfill material in the process of forming the underfill portion 7. That is, in the solid-state image sensor 1, the substrate 3 applies a fluid, that is, an underfill material, which forms an underfill portion 7 to an inner side surface portion 10 which is a surface portion forming the opening 4 from the surface 2a of the image sensor 2. It has a groove 11 for guiding in the direction of moving away.

The groove portion 11 is formed as a concave portion with respect to the flat portion of the inner side surface portion 10. That is, the groove portion 11 is formed by the concave surface 12 on the inner side surface portion 10. Therefore, the inner side surface portion 10 has a flat surface portion 13 which is a flat surface perpendicular to the plate surface of the substrate 3 and a concave surface portion 12 which is a concave surface with respect to the flat surface portion 13.

The groove portion 11 is formed along the vertical direction over the entire plate thickness direction of the substrate 3, that is, perpendicular to the plate surface of the substrate 3. Therefore, the groove portion 11 has a constant horizontal cross-sectional shape over the entire plate thickness direction (vertical direction) of the substrate 3 by the concave surface 12 and opens both the front surface 3a side and the back surface 3b side of the substrate 3.

In the present embodiment, the groove portion 11 is formed by a semi-cylindrical concave curved surface. That is, the concave surface 12 forming the groove 11 is a semi-cylindrical concave curved surface. Therefore, in the plan view of the substrate 3, the groove portion 11 forms a semicircular curve due to the concave surface 12 with respect to the linear flat portion 13.

In the example shown in the figure, the groove portions 11 are provided at two positions at predetermined intervals in each inner side surface portion 10 forming the opening 4. Therefore, the substrate 3 has grooves 11 at eight positions on the surface portion forming the opening 4. In each inner side surface portion 10, the two groove portions 11 are provided in the same arrangement mode. The number of groove portions 11 included in the substrate 3 is not limited, and the number of groove portions 11 and the arrangement mode of each inner side surface portion 10 may be different.

According to the configuration having the groove portion 11, in the process of forming the underfill portion 7, a part of the underfill material supplied between the image sensor 2 and the substrate 3 passes through the groove portion 11 and the back surface 3b of the substrate 3 is formed. It is guided in the direction from the side toward the surface 3a side, that is, in the direction away from the surface 2a of the image sensor 2. The groove 11 induces an underfill material by a capillary phenomenon. That is, between the image sensor 2 and the substrate 3, the underfill material that has reached the open portion on the lower side of the groove portion 11 is guided onto the concave surface 12 in a manner of being sucked up by the capillary phenomenon.

By guiding the underfill material to the groove portion 11 in this way, a portion where the underfill material is cured on the concave surface 12 of the groove portion 11 exists as a part of the underfill portion 7. Therefore, in the underfill portion 7, in addition to the interfaceted intervening portion 7a between the front surface 2a of the image sensor 2 and the back surface 3b of the substrate 3 and the outer protruding portion 7b, the underfill material guided into the groove portion 11 is provided. It has a cured lead-out unit 7c.

From the viewpoint of expressing the capillary phenomenon due to the groove portion 11, the diameter D1 (see FIG. 6) of the concave surface 12 which is a semi-cylindrical concave curved surface is preferably a dimension in the range of, for example, 10 to 50 μm. However, the size of the diameter of the concave surface 12 is not particularly limited. Further, from the viewpoint of inducing a larger amount of underfill material, it is desirable that the number of groove portions 11 is large.

Further, in the configuration for obtaining the inducing action of the underfill material by the groove portion 11, it is desirable that the height of the metal bump 6 is, for example, about 20 μm. The viscosity of the underfill material is preferably 20 Pa · s or less at room temperature, and more preferably about 10 Pa · s at room temperature.

<2. Method for manufacturing solid-state image sensor according to the first embodiment>
An example of the manufacturing method of the solid-state image sensor 1 according to the first embodiment of the present technology will be described with reference to FIGS. 9 to 11.

First, as shown in FIG. 9A, a silicon wafer 20 in which a pixel region 2c corresponding to each image sensor 2 is formed on the surface side is prepared. The silicon wafer 20 has undergone various steps for forming the image sensor 2. That is, the silicon wafer 20 is a semiconductor wafer in which a plurality of portions serving as an image sensor 2 in which a pixel group is formed on one plate surface side are formed in a predetermined arrangement. In recent years, 8-inch and 12-inch wafers are mainly used as the silicon wafer 20.

As shown in FIG. 9A, for the silicon wafer 20, a BG (Back-Grinding) step of cutting the silicon wafer 20 from the back surface 20b side in order to make the silicon wafer 20 a desired thickness that does not affect the device characteristics. Is done. In the BG process, for example, a back grind foil 21 such as a diamond foil is used, and the silicon wafer 20 is polished. In order to increase the surface roughness of the back surface 20b of the silicon wafer 20, a mirror finishing step such as chemical polishing or dry polishing may be performed after the BG step.

Next, as shown in FIG. 9B, the silicon wafer 20 is diced along a predetermined dicing line. That is, a step of cutting the silicon wafer 20 so as to divide each portion corresponding to the image sensor 2 along a predetermined arrangement and individualizing the silicon wafer 20 is performed. In the dicing step, the silicon wafer 20 set on the chuck table 22 is divided and separated by the dicing blade 23 so as to be separated for each image sensor 2. As a result, the image sensor 2 as a large number of sensor chips can be obtained.

Subsequently, as shown in FIG. 9C, a step of forming the metal bump 6 is performed for each image sensor 2. For example, a wire bonding device is used on the electrodes formed on the surface 2a of the image sensor 2, and Au stud bumps as metal bumps 6 are formed. The Au stud bump is preferably as small as possible from the viewpoint of cost reduction, and is formed at a height of, for example, about 20 μm.

On the other hand, the substrate 3 is created in a substrate manufacturing process, which is a process different from the main process flow of the flip-chip structure package including the manufacturing process of the image sensor 2. As shown in FIG. 10A, in the substrate making step, a collective substrate 25 in which the substrate portions 3A serving as the substrate 3 constituting the solid-state image sensor 1 are two-dimensionally connected is created. In the figure, a portion of the assembly substrate 25 in which six substrate portions 3A are connected is shown. For example, an integral assembly substrate 25 is formed by several tens to several hundreds of substrate portions 3A.

The assembly substrate 25 is a substrate formed of an organic material such as plastic or a material such as ceramics, provided with a wiring layer, electrodes, and the like. Therefore, in the substrate making step, a base material to be the collective substrate 25 is prepared, and a wiring step of providing a wiring layer, electrodes, and the like on the base material is performed.

Next, an opening forming step, which is a step of forming an opening 4 for each substrate portion 3A of the collective substrate 25, is performed. In the opening forming step, as shown in FIG. 10B, the opening 4 is punched by, for example, a punching press machine having a punching head 27 which is a jig for punching which is provided so as to be reciprocally movable by a predetermined drive mechanism 26. It is formed.

The punching head 27 has a shape corresponding to the opening 4. Therefore, in the punching head 27, the portion acting on the collective substrate 25 has a flat surface portion 27a corresponding to the flat surface portion 13 of the opening 4 and a protruding portion 27b for forming the groove portion 11. The protruding portion 27b is a semi-cylindrical ridge portion protruding from the flat surface portion 27a corresponding to the flat surface portion 13. According to such a punching head 27, the opening 4 having the groove 11 is formed only by punching.

In the punching press machine, the direction in which the punching head 27 approaches a predetermined portion of the substrate portion 3A in a state where the collective substrate 25 is set on the stage 28 having an opening 28a for receiving the punching head 27 (arrow P1). By moving to (see), the substrate portion 3A is punched out and the opening 4 is formed. By the opening forming step, as shown in FIG. 10C, a collecting opening substrate 25A which is a collecting substrate 25 in which an opening 4 is formed in each substrate portion 3A is obtained.

In the opening forming step, the following method can be adopted. First, a rectangular opening portion is punched and formed in the substrate portion 3A of the collective substrate 25 by a punching press machine having a punching head having a simple rectangular cross section. That is, the flat portion that becomes the flat portion 13 in the opening 4 is formed by punching. After that, the groove portion 11 is formed on the flat portion forming the punched opening portion by a processing tool such as a drill. According to such a method, the groove portion 11 is provided by a two-step process of a punching step of forming a simple opening portion and a cutting step (groove forming step) of forming the groove portion 11 in the flat surface portion forming the opening portion. The opening 4 is formed.

The assembly opening substrate 25A is put into the main process of the flip-chip structure package. Then, as shown in FIG. 11A, the image sensor 2 and the collective aperture substrate 25A are flip-chip bonded. That is, the image sensor 2 is flip-chip mounted on each substrate portion 3A of the collective opening substrate 25A so as to close the opening 4 from the back surface 25b side which is the back surface 3b of the substrate 3.

For flip-chip bonding, a method using a conductive adhesive, a method using a film-type anisotropic conductive film, an ultrasonic bonding method, a pressure welding method, etc. are appropriate depending on the type of the metal bump 6. Used and done. When the image sensor 2 is flip-chip mounted on the collective opening substrate 25A, the dimension of the gap between the collective opening substrate 25A and the image sensor 2 is, for example, about 20 μm corresponding to the height of the metal bump 6. ..

Next, as shown in FIG. 11B, a step of forming the underfill portion 7 is performed. In this step, the underfill material is supplied to the gap between each image sensor 2 and the substrate portion 3A (hereinafter referred to as “sensor-board gap”) while being discharged from a nozzle of a dispenser (not shown). Here, for example, the underfill material is supplied from the outer peripheral side of the image sensor 2 to the gap between the sensor and the substrate.

The underfill material supplied to the gap between the sensor and the substrate flows into the gap between the sensor and the substrate in a manner of penetrating into the gap between the sensor and the substrate due to the capillary phenomenon, covers the entire plurality of metal bumps 6, and forms the image sensor 2 and the substrate 3. Diffuse to fill the gap between. Here, on the outer peripheral side of the sensor-board gap, the underfill material spreads like a fillet due to its surface tension or the like and protrudes from the sensor-board gap portion. Further, the underfill material that has reached the lower open portion of the groove portion 11 between the image sensor 2 and the substrate 3 is guided onto the concave surface 12 in a manner of crawling up the groove portion 11 by a capillary phenomenon.

Regarding the viscosity of the underfill material, if the viscosity is too low, the underfill material easily penetrates into the pixel region 2c side, and if the viscosity is too high, it takes time to penetrate in the gap between the sensor and the substrate. Therefore, as the underfill material, a material having a temperature of 20 Pa · s or less at room temperature, preferably a material having a temperature of about 10 Pa · s at room temperature is used.

After the underfill material is supplied to the gap between the sensor and the substrate, baking is performed under predetermined temperature conditions in order to vaporize the solvent contained in the underfill material and solidify the underfill material. The baking temperature is appropriately set according to the underfill material, the solvent contained therein, and the like. As the baking equipment, a hot plate, an oven, etc. are appropriately selected and used as needed. By baking, the underfill material is solidified, and an underfill portion 7 having an interfaceted intervening portion 7a, an outer protruding portion 7b, and a lead-out portion 7c in the groove portion 11 is formed (see FIG. 4).

Next, as shown in FIG. 11C, the collective opening substrate 25A to which the image sensor 2 is joined and the underfill portion 7 is formed is inverted and marking is performed. In the marking, for example, unique identification information such as a serial number is attached to each substrate portion 3A of the collective opening substrate 25A by laser marking or the like.

Next, as shown in FIG. 11C, a step of forming the solder balls 29 at a predetermined portion on the back surface side of each substrate portion 3A of the collective opening substrate 25A is performed. The solder balls 29 are formed so as to be electrically connected to the wiring portion of the substrate portion 3A through, for example, an opening of a solder resist formed on the back surface side of each substrate portion 3A.

The solder ball 29 is, for example, a method of placing a ball-shaped solder in a state where flux is applied to the opening of the solder resist, a method of printing solder paste on the opening of the solder resist using a printing technique, and then reflowing. Is formed by. The solder ball 29 serves as a terminal for making an electrical connection to a circuit board on which the solid-state image sensor 1 is mounted in a predetermined device to which the solid-state image sensor 1 is applied.

Subsequently, as shown in FIG. 11D, a dicing step is performed in which the collective opening substrate 25A on which the image sensor 2 is mounted on each substrate portion 3A is divided into individual devices. In this step, the collective opening substrate 25A is divided by the dicing blade 30 and separated into a plurality of device elements 31 so that the collective opening substrate 25A is divided into the substrate portions 3A.

Then, the glass 5 is fixed and mounted on the surface 3a side of the substrate 3 with an adhesive or the like on each of the individualized device elements 31. The solid-state image sensor 1 is obtained by the above manufacturing process. In addition, after mounting the glass 5 on each substrate portion 3A in the state of the collective opening substrate 25A, dicing may be performed on the collective opening substrate 25A.

According to the solid-state image sensor 1 according to the present embodiment as described above, it is possible to suppress the material forming the underfill portion 7 from flowing to the pixel region 2c side of the image sensor 2. As a result, the distance between the opening end of the opening 4 of the substrate 3 and the pixel region 2c, that is, the horizontal direction between the flat portion 13 forming the opening 4 and the edge of the pixel region 2c facing the opening 4 in a plan view. (FIG. 3, interval L1, hereinafter referred to as "distance between the open end of the substrate and the pixel") can be shortened. As a result, the image sensor 2 and the solid-state image sensor 1 can be miniaturized.

In a package structure such as the solid-state image sensor 1 according to the present embodiment, in order to prevent the underfill material from flowing into the pixel region 2c in the step of forming the underfill portion 7, the distance between the open end of the substrate and the pixel is prevented. It is necessary to keep above a certain level. Here, a configuration in which the groove 11 is not provided in the opening 4 of the substrate 3 is assumed as the configuration of the comparative example. That is, in the configuration of the comparative example, the substrate 3X has an opening 4X formed by the flat surface 13X such as the flat surface portion 13 as a whole.

In the case of the configuration of the comparative example, if the distance between the open end of the substrate and the pixel is insufficient, for example, as shown in FIG. 12, the underfill material penetrates into the pixel region 2c and the characteristics of the image sensor 2 deteriorate. It will be. In the example shown in FIG. 12, as a part of the underfill portion 7X, an inner protruding portion 7d protruding from the gap between the sensor and the substrate to the inner peripheral side is formed, and this inner protruding portion 7d is the edge of the pixel region 2c. It covers the edge. As described above, in the prior art, from the viewpoint of avoiding the infiltration of the underfill material into the pixel region, it is necessary to secure the distance between the open end of the substrate and the pixel so that the inner protruding portion 7d does not cover the pixel region 2c. There is a limit to the miniaturization of the sensor chip.

On the other hand, the solid-state image sensor 1 according to the present embodiment has a groove 11 for guiding the underfill material in the opening 4 of the substrate 3. With such a configuration, the underfill material that has infiltrated from the coating area with respect to the gap between the sensor and the substrate is guided into the groove 11 by the capillary phenomenon, and is guided upward by the groove 11. As a result, it is suppressed that the underfill material advances to the pixel region 2c side.

That is, in the solid-state image sensor 1 according to the present embodiment, the groove 11 of the opening 4 of the substrate 3 allows the flow of the underfill material to flow toward the pixel region 2c (inside), and is inside the opening 4. By controlling the surface portion 10 in the crawling direction, it is possible to prevent the underfill material from protruding from the gap between the sensor and the substrate to the pixel region 2c side. As a result, for example, even if the distance between the open end of the substrate and the pixel is such that the underfill material reaches the pixel region 2c in the configuration of the comparative example as shown in FIG. 12, the solid-state image sensor of the present embodiment By adopting the configuration of 1, it is possible to prevent the underfill material from reaching the pixel region 2c. As a result, the distance between the open end of the substrate and the pixel can be made shorter than before, which can contribute to the miniaturization of the image sensor 2.

Further, regarding the shape of the groove portion 11, in the present embodiment, the groove portion 11 is formed by a semi-cylindrical concave curved surface. According to such a configuration, it becomes easy to secure the surface area of the concave surface 12, and the inducing action of the underfill material can be effectively obtained. Further, the groove portion 11 can be easily formed by a processing tool such as a drill.

<3. Configuration example of the solid-state image sensor according to the second embodiment>
A configuration example of the solid-state image sensor 51 according to the second embodiment of the present technology will be described with reference to FIGS. 13 to 15. In the following description, the same reference numerals will be given to the configurations common to those of the first embodiment, and the description thereof will be omitted as appropriate. Further, FIG. 13 shows an end view of the cut portion at a position passing through the central portion of the groove portion 61 as well as the BB position passing through the central portion of the groove portion 11 in FIG.

The solid-state image sensor 51 of the present embodiment is different from the solid-state image sensor 1 of the first embodiment in that the groove 11 of the opening 4 of the substrate 3 is inclined in a predetermined direction.

As shown in FIGS. 13 to 15, in the solid-state image sensor 51 of the present embodiment, the groove 61 of the opening 4 of the substrate 3 is on the image sensor 2 side in the plate thickness direction of the substrate 3 (vertical direction in FIG. 15). It is inclined in the direction of narrowing the opening width of the opening 4 from the to the opposite side.

The groove portion 61 is formed by a concave surface 62 which is a concave portion with respect to the flat surface portion 13 of the inner side surface portion 10. The groove 61 narrows the thickness direction of the substrate 3 from the outside to the inside from the image sensor 2 side (lower side in FIG. 15) to the opposite side (upper side in FIG. 15), that is, the opening width of the opening 4. It is tilted in the direction.

Specifically, the concave surface 62 forming the groove 61 includes a concave curved surface portion 62a having a semicircular horizontal cross-sectional shape, and both sides of the substrate 3 on the front surface 3a side and the back surface 3b side are open. In the side sectional view, the concave curved surface portion 62a is from the outer side (left and right outer side in FIG. 15) to the inner side (in FIG. 15) on the opening 4 side from the back surface 3b side to the front surface 3a side of the substrate 3. Make a straight line that slopes toward the left and right inside).

Further, the concave surface 62 forming the groove 61 has a flat surface portion 62b which is a vertical flat surface at a portion inside the concave curved surface portion 62a. The flat surface portion 62b is formed at a portion facing the groove portion 61 in the width direction. Due to the flat surface portion 62b, the opening area on the lower side (back surface 3b side) of the groove portion 61 is wider than the opening area on the upper side (front surface 3a side).

In the method for manufacturing the solid-state imaging device 51 of the present embodiment, in the opening forming step of forming the opening 4 of the substrate 3, for example, a punching step of forming the opening by a punching press as described above, a drill, and the like. A cutting step (groove forming step) of forming a groove portion 61 in a flat portion forming an opening portion is performed by using the processing tool of the above. That is, as an opening forming step, after forming a flat portion to be a flat portion 13 in the opening 4 by punching, a groove 61 is formed on the flat portion forming the punched opening by a processing tool such as a drill. Is done.

According to the solid-state image sensor 51 according to the present embodiment as described above, the following effects can be obtained in addition to the effects obtained by the solid-state image sensor 1 according to the first embodiment.

That is, in the solid-state image sensor 51 according to the present embodiment, the groove 61 is inclined in a direction that gradually narrows the opening width of the opening 4 from the lower side (image sensor 2 side) to the upper side (glass 5 side). .. According to such a configuration, the concave curved surface portion 62a forming the inclined surface of the groove portion 61 has an action of damming the underfill material guided upward.

As a result, it is possible to prevent the underfill material induced by the groove portion 61 from crawling up the groove portion 61 and reaching the surface 3a of the substrate 3. That is, by adjusting the inclination angle of the concave curved surface portion 62a, it is possible to control the creeping behavior of the underfill material in the groove portion 61, and it is possible to prevent the underfill material from reaching the surface 3a of the substrate 3. It will be possible.

As a result, it is possible to prevent the underfill material from adhering to the surface 3a of the substrate 3 which is the support surface on which the glass 5 is supported, and it is possible to prevent the underfill material from affecting the mounting structure of the glass 5. In FIG. 13, as a part of the underfill portion 7, a lead-out portion 7c formed of the underfill material dammed in the groove portion 61 is shown.

<4. Configuration example of the solid-state image sensor according to the third embodiment>
A configuration example of the solid-state image sensor 71 according to the third embodiment of the present technology will be described with reference to FIGS. 16 to 19. Note that FIG. 16 shows an end view of the cut portion at a position passing through the central portion of the groove portion 81 as well as the BB position passing through the central portion of the groove portion 11 in FIG.

In comparison with the solid-state imaging device 1 of the first embodiment, the solid-state imaging device 71 of the present embodiment includes a lens unit 73 as an optical system including a plurality of lenses 74 and glass 75 instead of the glass 5. The difference is that the groove 11 of the opening 4 of the substrate 3 is inclined in a predetermined direction.

As shown in FIG. 16, the lens unit 73 is provided on the surface 3a side of the substrate 3, and the light from the subject is imaged on the image sensor 2 by the plurality of lenses 74. The lens unit 73 has a support cylinder 76 formed in a cylindrical shape, and the lens 74 and the glass 75 are supported in the support cylinder 76. In the present embodiment, the support cylinder 76 supports the three lenses 74 in a vertically laminated state via a spacer or the like so that the cylinder axis direction is the optical axis direction. The glass 75 is supported below the lowermost lens 74 and at the lower end of the support cylinder 76. The number of lenses 74 is not particularly limited.

The lens unit 73 is provided on the substrate 3 so that the optical axis direction is perpendicular to the plate surface of the image sensor 2 (vertical direction). The lens unit 73 is mounted on the substrate 3 in a state where the lower end portion of the support cylinder 76 is fixed and supported on the outer peripheral portion of the surface 3a of the substrate 3 with an adhesive or the like. The glass 75 is an example of a transparent member like the glass 5 of the first embodiment, and is parallel to the image sensor 2 and with respect to the surface 3a of the substrate 3 in a state of being supported by the lens unit 73. It is provided so as to cover the entire opening 4 from above at a position separated by a predetermined interval.

In the package structure of the present embodiment, the cavity 78 is a closed space including the internal space of the opening 4 of the substrate 3 by the image sensor 2, the underfill portion 7, the substrate 3, the glass 75, and the lower end portion of the support cylinder 76. Is formed. In such a configuration, the light collected by the plurality of lenses 74 passes through the glass 75 and is incident on the light receiving surface of the image sensor 2 through the cavity 78. Further, the solid-state imaging device 71 according to the present embodiment is, for example, as shown in FIG. 16, an organic material such as plastic or ceramics via a solder ball 79 arranged at a predetermined portion on the back surface 3b side of the substrate 3. It is used by being mounted on a circuit board 80 configured by the above.

Next, the groove 81 of the substrate 3 according to the present embodiment will be described. As shown in FIGS. 16 to 18, in the solid-state image sensor 71 of the present embodiment, the groove 81 of the opening 4 of the substrate 3 is on the image sensor 2 side in the plate thickness direction of the substrate 3 (vertical direction in FIG. 18). It is inclined in the direction of widening the opening width of the opening 4 from the to the opposite side.

The groove portion 81 is formed by a concave surface 82 which is a concave portion with respect to the flat surface portion 13 of the inner side surface portion 10. The groove 81 widens the thickness direction of the substrate 3 from the inside to the outside from the image sensor 2 side (lower side in FIG. 18) to the opposite side (upper side in FIG. 18), that is, the opening width of the opening 4. It is tilted in the direction.

Specifically, the concave surface 82 forming the groove 81 includes a concave curved surface portion 82a having a semicircular horizontal cross-sectional shape, and both sides of the substrate 3 on the front surface 3a side and the back surface 3b side are open. In the side sectional view, the concave curved surface portion 82a extends from the back surface 3b side to the front surface 3a side of the substrate 3 from the inside (left and right inside in FIG. 18) on the opening 4 side of the substrate 3 to the outside on the outer edge side (in FIG. 18). Make a straight line that slopes toward the left and right outside).

Further, the concave surface 82 forming the groove 81 has a flat surface portion 82b which is a vertical flat surface at a portion inside the concave curved surface portion 82a. The flat surface portion 82b is formed at a portion facing the groove portion 81 in the width direction. Due to the flat surface portion 82b, the opening area on the lower side (back surface 3b side) of the groove portion 81 is narrower than the opening area on the upper side (front surface 3a side).

In the method for manufacturing the solid-state imaging device 71 of the present embodiment, in the opening forming step of forming the opening 4 of the substrate 3, as in the case of the second embodiment, for example, an opening is made by a punching press as described above. A punching step for forming the portion and a cutting step (groove forming step) for forming the groove portion 81 in the flat portion forming the opening portion by using a processing tool such as a drill are performed. Further, in the main process of the package, a step of mounting the lens unit 73 on the substrate 3 is performed as a step before or after the dicing step for the collective aperture substrate 25A.

According to the solid-state image sensor 71 according to the present embodiment as described above, the following effects can be obtained in addition to the effects obtained by the solid-state image sensor 1 according to the first embodiment.

That is, in the solid-state image sensor 71 according to the present embodiment, the groove 81 is inclined in a direction in which the opening width of the opening 4 is gradually widened from the lower side (image sensor 2 side) to the upper side (glass 75 side). .. According to such a configuration, since the flow path cross-sectional area of the groove 81 gradually increases from the lower side to the upper side, it is possible to prevent the underfill material induced in the groove 81 from accumulating in the groove 81. can do. That is, by adjusting the inclination angle of the concave curved surface portion 82a, it is possible to control the crawling behavior of the underfill material in the groove portion 81, and it is possible to suppress the underfill material from accumulating in the groove portion 81. Become.

As a result, it is possible to prevent the underfill material from accumulating in the groove 81 and solidifying in a state of bulging to the outside of the groove 81 due to surface tension or the like. The underfill portion that bulges outward from the groove portion 81 becomes an inwardly protruding portion in the opening 4 of the substrate 3, blocks the light received by the pixel region 2c through the opening 4, and is a sensor of the image sensor 2. May affect properties. Therefore, as described above, the inclination of the groove portion 81 suppresses the accumulation of the underfill material in the groove portion 81, so that the overhanging portion of the underfill portion from the groove portion 81 is less likely to be formed, and the underfill portion is the sensor. It is possible to reduce or prevent the influence on the characteristics.

Further, the solid-state image sensor 71 according to the present embodiment mounts the lens unit 73 supporting the glass 75 on the substrate 3 in a state where the lower end portion of the support cylinder 76 is supported on the outer peripheral portion of the surface 3a of the substrate 3. It has the above configuration. According to such a configuration, unlike the case where the glass 5 is mounted so as to cover the opening 4 of the substrate 3 as in the solid-state image sensor 1 of the first embodiment, the underfill material is on the surface 3a of the substrate 3. Can be allowed to reach.

Specifically, as shown in FIG. 19, the glass 75 supported by the support cylinder 76 supported on the outer peripheral portion of the surface 3a of the substrate 3 is formed on the substrate 3 around the opening 4 on the surface 3a of the substrate 3. It is supported with a space M1 between it and the surface 3a of the glass. Therefore, the underfill material can be attached to the portion 3c of the surface 3a of the substrate 3 facing the glass 75 (particularly the portion around the opening 4) without affecting the mounting structure of the glass 75. That is, it is permissible for the underfill material to reach the surface 3a of the substrate 3.

Therefore, for example, as shown in FIG. 19, in the underfill portion 7, in addition to the interfaceted intervening portion 7a, the outer protruding portion 7b, and the lead-out portion 7c in the groove portion 81, as an extension portion from the lead-out portion 7c. , The underfill material that has reached the surface 3a of the substrate 3 can form a cured riding portion 7e. As a result, by intentionally forming the riding portion 7e by, for example, adjusting the inclination angle of the groove portion 81, it becomes possible to guide more underfill material in the direction away from the pixel region 2c side, and the underfill material can be guided. Can effectively avoid reaching the pixel region 2c. Even in the substrate 3 having the groove portions 11 and 61 according to the first and second embodiments, the solid-state image sensor 1 and 51 are provided with the lens unit 73 instead of the glass 5, so that the underfill portion 7 is loaded. The raised portion 7e can be formed, and the above-mentioned effect can be obtained.

<5. Deformation example of the groove of the board>
A modified example of the groove portion of the substrate 3 according to the embodiment of the present technology will be described.

As shown in FIG. 20A, the groove portion 11A of the first modification has a “V” -shaped horizontal cross-sectional shape. The groove portion 11A is formed by a pair of inclined surfaces 91a having a "V" -shaped cross-sectional shape. That is, the groove portion 11A is a recess formed in a V notch shape.

As shown in FIG. 20B, the groove portion 11B of the second modification has a horizontal cross-sectional shape along a rectangular shape. The groove portion 11B is formed by a bottom surface 92a having a cross-sectional shape along a rectangular shape and a pair of side surfaces 92b facing each other.

As shown in FIG. 20C, in the third modification, the groove portions 11C, which are V-notch-shaped recesses formed by the pair of inclined surfaces 93a, are continuously formed, and the inner side surface portions forming the rectangular opening 4 are formed. 10 is formed in a triangular wave shape. In this configuration, the portion between the adjacent groove portions 11C is a ridge portion 93c having a mountain shape in a plan view.

As shown in FIG. 20D, in the fourth modification, the groove portion 11D, which is a concave portion along the rectangular shape formed by the bottom surface 94a and the pair of side surfaces 94b, is continuously formed to form the rectangular opening 4. Each inner side surface portion 10 is formed in a rectangular wavy shape. In this configuration, the portion between the adjacent groove portions 11C is a ridge portion 94c that follows a rectangular shape in a plan view.

The grooves of each of the modified examples shown in FIGS. 20A to 20D are formed perpendicular to the plate surface of the substrate 3 over the entire plate thickness direction of the substrate 3. Like the groove portion 61 of the second embodiment and the groove portion 81 of the third embodiment, the substrate 3 may be formed so as to be inclined with respect to the plate thickness direction.

As shown in FIG. 21A, the groove portion 11E of the fifth modification is formed by a concave surface 95 forming a curved line with the left and right outer sides as convex sides in a side cross-sectional view. As described above, the groove portion according to the present technology may be formed in a curved shape in the plate thickness direction of the substrate 3. The concave surface 95 is, for example, a semi-cylindrical concave curved surface whose axial direction is the lateral direction (direction along the plate surface of the substrate 3).

As shown in FIG. 21B, the groove portion 11F of the sixth modification is formed by a concave surface 96 that is curved in the plate thickness direction of the substrate 3 in a side cross-sectional view. Moreover, the concave surface 96 is inclined in a direction that narrows the opening width of the opening 4 from the lower side to the upper side in the plate thickness direction of the substrate 3, like the groove portion 61 of the second embodiment.

As shown in FIG. 21C, the groove portion 11G of the seventh modification is formed by a concave surface 97 that is curved in the plate thickness direction of the substrate 3 in a side cross-sectional view. Moreover, the concave surface 97 is inclined in a direction in which the opening width of the opening 4 is widened from the lower side to the upper side in the plate thickness direction of the substrate 3, like the groove portion 81 of the third embodiment.

The above-mentioned effects can also be obtained by the above-mentioned various modifications. In particular, according to the configuration of the sixth modification as shown in FIG. 21B, the same effect as that of the configuration of the second embodiment can be obtained from the inclined direction of the groove portion 11F. Further, according to the configuration of the seventh modification as shown in FIG. 21C, the same effect as that of the configuration of the third embodiment can be obtained from the inclination direction of the groove portion 11G.

<6. Configuration example of electronic device>
An example of application of the solid-state image sensor according to the above-described embodiment to an electronic device will be described with reference to FIG. Here, an application example of the solid-state image sensor 1 according to the first embodiment will be described.

The solid-state image pickup device 1 is used as an image capture unit (photoelectric conversion unit) such as an image pickup device such as a digital still camera or a video camera, a portable terminal device having an image pickup function, or a copier that uses a solid-state image sensor as an image reading unit. It can be applied to all electronic devices that use a solid-state image sensor. The solid-state image sensor may be in the form of one chip, or may be in the form of a module having an image pickup function in which the image pickup unit and the signal processing unit or the optical system are packaged together. You may.

As shown in FIG. 22, the image pickup device 100 as an electronic device includes an optical unit 102, a solid-state image pickup device 1, a DSP (Digital Signal Processor) circuit 103 which is a camera signal processing circuit, a frame memory 104, and a display unit. It includes a 105, a recording unit 106, an operation unit 107, and a power supply unit 108. The DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, the operation unit 107, and the power supply unit 108 are connected to each other via the bus line 109.

The optical unit 102 includes a plurality of lenses, captures incident light (image light) from the subject, and forms an image on the image pickup surface of the solid-state image pickup device 1. The solid-state image sensor 1 converts the amount of incident light imaged on the imaging surface by the optical unit 102 into an electric signal in pixel units and outputs it as a pixel signal.

The display unit 105 is composed of a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays a moving image or a still image captured by the solid-state image sensor 1. The recording unit 106 records a moving image or a still image captured by the solid-state image sensor 1 on a recording medium such as a hard disk or a semiconductor memory.

The operation unit 107 issues operation commands for various functions of the image pickup apparatus 100 under the operation of the user. The power supply unit 108 appropriately supplies various power sources that serve as operating power sources for the DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, and the operation unit 107 to these supply targets.

According to the image sensor 100 as described above, in the solid-state image sensor 1, it is possible to suppress the underfill material from flowing to the pixel region 2c side of the image sensor 2, and the distance between the substrate opening end and the pixels is shortened. The image sensor 2 and the solid-state image sensor 1 can be miniaturized, and the image sensor 100 can be miniaturized.

The above description of the embodiment is an example of the present technology, and the present technology is not limited to the above-described embodiment. Therefore, it goes without saying that various changes can be made according to the design and the like as long as the technical concept of the present disclosure is not deviated from the embodiment other than the above-described embodiment. Further, the effects described in the present disclosure are merely examples and are not limited, and other effects may be obtained. In addition, the configurations of the above-described embodiments and the configurations of the modified examples can be appropriately combined.

The present technology can have the following configurations.
(1)
A solid-state image sensor having a pixel region, which is a light receiving region containing a large number of pixels, on the surface side, which is one plate surface of the semiconductor substrate,
A substrate provided on the surface side of the solid-state image sensor and having an opening for passing light received in the pixel region, and a substrate.
An underfill portion formed of a cured fluid and covering a connection portion that electrically connects the solid-state image sensor and the substrate is provided.
The substrate is a solid-state image pickup device having a groove portion on a surface portion forming the opening portion for guiding a fluid forming the underfill portion in a direction away from the surface of the solid-state image pickup device.
(2)
The solid-state image sensor according to (1) above, wherein the groove is formed by a semi-cylindrical concave curved surface.
(3)
The solid-state imaging according to (1) or (2) above, wherein the groove is inclined in a direction of narrowing the opening width of the opening from the solid-state imaging device side to the opposite side in the plate thickness direction of the substrate. Device.
(4)
The solid-state imaging according to (1) or (2) above, wherein the groove is inclined in the plate thickness direction of the substrate in a direction in which the opening width of the opening is widened from the solid-state image sensor side to the opposite side. Device.
(5)
A solid-state image sensor having a pixel region, which is a light receiving region containing a large number of pixels, on the surface side, which is one plate surface of the semiconductor substrate,
The solid-state image sensor and the substrate are formed of a substrate provided on the surface side of the solid-state image sensor and having an opening for passing light received in the pixel region and a cured fluid. It is equipped with an underfill part that covers the connection part that is electrically connected.
The substrate is an electronic device provided with a solid-state image pickup device having a groove portion on a surface portion forming the opening portion for guiding a fluid forming the underfill portion in a direction away from the surface of the solid-state image pickup device. ..

1 Solid-state image sensor 2 Image sensor (solid-state image sensor)
2a Surface 2c Pixel area 3 Substrate 4 Opening 5 Glass 6 Metal bump (connection)
7 Underfill part 7a Inter-plane intervening part 7b Outer protruding part 7c Out-out part 10 Inner side surface part 11 Groove part 12 Concave surface 51 Solid-state image sensor 61 Groove part 62 Concave surface 71 Solid-state image sensor 73 Lens unit 81 Groove part 82 Concave surface

Claims (5)

A solid-state image sensor having a pixel region, which is a light receiving region containing a large number of pixels, on the surface side, which is one plate surface of the semiconductor substrate,
A substrate provided on the surface side of the solid-state image sensor and having an opening for passing light received in the pixel region, and a substrate.
An underfill portion formed of a cured fluid and covering a connection portion that electrically connects the solid-state image sensor and the substrate is provided.
The substrate is a solid-state image pickup device having a groove portion on a surface portion forming the opening portion for guiding a fluid forming the underfill portion in a direction away from the surface of the solid-state image pickup device. The solid-state image sensor according to claim 1, wherein the groove is formed by a semi-cylindrical concave curved surface. The solid-state imaging device according to claim 1, wherein the groove portion is inclined in the plate thickness direction of the substrate in a direction in which the opening width of the opening is narrowed from the solid-state image sensor side to the opposite side. The solid-state imaging device according to claim 1, wherein the groove portion is inclined in the plate thickness direction of the substrate in a direction in which the opening width of the opening is widened from the solid-state image sensor side to the opposite side. A solid-state image sensor having a pixel region, which is a light receiving region containing a large number of pixels, on the surface side, which is one plate surface of the semiconductor substrate,
A substrate provided on the surface side of the solid-state image sensor and having an opening for passing light received in the pixel region, and a substrate.
An underfill portion formed of a cured fluid and covering a connection portion that electrically connects the solid-state image sensor and the substrate is provided.
The substrate is an electronic device provided with a solid-state image pickup device having a groove portion on a surface portion forming the opening portion for guiding a fluid forming the underfill portion in a direction away from the surface of the solid-state image pickup device. ..

Images