WO2024053466A1

WO2024053466A1 - Semiconductor device and electronic equipment

Info

Publication number: WO2024053466A1
Application number: PCT/JP2023/031052
Authority: WO
Inventors: 文爽董; 裕人田中; 光人金竹; 直樹栫山; 耕佑晴山
Original assignee: ソニーセミコンダクタソリューションズ株式会社
Priority date: 2022-09-09
Filing date: 2023-08-28
Publication date: 2024-03-14

Abstract

This semiconductor device: enables a reduction in the stress on a connecting member that electrically connects a substrate and a semiconductor element to each other; and enables miniaturization of a package.　This semiconductor device comprises: a substrate; a semiconductor element provided on the substrate; and a connecting member that electrically connects the substrate and the semiconductor element. The substrate has: a first surface to which the semiconductor element is attached; and a second surface that is positioned on the upper side of the first surface in the vertical direction, and that has disposed thereon an electrode to which the connecting member is connected.

Description

Semiconductor equipment and electronic equipment

The present disclosure relates to semiconductor devices and electronic equipment.

Conventionally, some semiconductor devices equipped with semiconductor elements (semiconductor chips) such as image pickup elements such as CMOS image sensors and light emitting elements such as semiconductor lasers have the following package structure. In other words, glass, which is a transparent member, is supported on the upper side (front side) of the semiconductor chip mounted on the substrate via a resin rib part, and a sealing resin part is placed around the semiconductor chip and glass on the substrate. It has a hollow package structure with

Some of such package structures include a plurality of wires (bonding wires) as connection members that electrically connect the semiconductor chip to the substrate (see, for example, Patent Document 1). The wire is provided with one end connected to a bonding pad formed on the top surface of the substrate and the other end connected to a connection pad formed on the top surface of the semiconductor chip.

The package structure includes a structure in which the entire wire is covered with a sealing resin, and a structure in which a rib portion is formed to cover the connection part of the wire to the connection pad of the semiconductor chip in order to reduce the size of the package. be. An example of a semiconductor device that employs such a package structure is a BGA (Ball Grid Array) package for image sensors in which multiple solder balls are arranged in a lattice pattern as external connection terminals on the back side of the substrate. .

Unexamined Japanese Patent Publication No. 2018-6760

In the package structure as described above, it is effective to increase the thickness of the semiconductor chip from the viewpoint of heat insulation and as a countermeasure against warpage of the pixel surface (imaging surface) of the semiconductor chip and the package. However, as the thickness of the semiconductor chip increases, the stress acting on the wires disposed between the substrate and the semiconductor chip increases.

If the stress acting on the wire increases, for example, the stress on the wire neck during reflow or thermal cycle testing when mounting a semiconductor device on a set board will worsen, and in some cases, problems such as wire breakage may occur. There is. Here, the wire neck is a base portion of the wire body relative to a joint portion formed as an enlarged diameter portion to the wire body at both ends of the wire.

In addition, in the package structure described above, regarding the die bonding material for fixing the semiconductor chip on the substrate, the protruding portion (fillet) of the die bonding material outward from the semiconductor chip on the surface of the substrate prevents wire connections. In order to avoid interference with the bonding pads of the receiving substrate, it is necessary to ensure a distance between the semiconductor chip and the bonding pads. This becomes a factor that hinders miniaturization of the package.

The purpose of this technology is to provide semiconductor devices and electronic equipment that can reduce stress on connecting members that electrically connect a substrate and a semiconductor element to each other, and can also reduce the size of the package. do.

A semiconductor device according to the present technology includes a substrate, a semiconductor element provided on the substrate, and a connecting member that electrically connects the substrate and the semiconductor element, and the substrate is connected to the semiconductor element. The device has a first surface portion that receives attachment, and a second surface portion that is located above the first surface portion in the vertical direction and has an electrode portion that receives the connection of the connection member.

In another aspect of the semiconductor device according to the present technology, in the semiconductor device, the second surface portion is provided at a height position below an element-side electrode portion that is provided on the upper surface of the semiconductor element and receives connection with the connection member. It is located at a height.

Another aspect of the semiconductor device according to the present technology is that the semiconductor device includes a cover member that covers the semiconductor element from above, and a cover member that is interposed between the semiconductor element and the cover member, and that and a support part that supports the member, and the support part is provided so as to cover a connection part of the connection member to the semiconductor element.

In another aspect of the semiconductor device according to the present technology, in the semiconductor device, the substrate has a stepped surface portion formed between the first surface portion and the second surface portion, and the stepped surface portion is arranged in a vertical direction. The semiconductor device has an inclined surface that is inclined in a direction that gradually widens the distance between the semiconductor element and the semiconductor element from the first surface side to the second surface side.

Another aspect of the semiconductor device according to the present technology is that in the semiconductor device, the second surface portion is formed of a member different from the member forming the first surface portion.

In another aspect of the semiconductor device according to the present technology, in the semiconductor device, the substrate has a plurality of types of surface portions having different heights as the second surface portion.

Another aspect of the semiconductor device according to the present technology is that the semiconductor device includes a sealing resin portion provided around the semiconductor element and the cover member on the substrate, and the cover member is arranged on at least an upper side of a side surface. A part thereof is an exposed surface portion that is not covered with the sealing resin portion.

In another aspect of the semiconductor device according to the present technology, in the semiconductor device, the substrate has a convex portion protruding from the first surface portion as a portion forming the second surface portion, and in the convex portion , a reinforcing member having a wiring part for energizing the electrode part and having higher rigidity than the substrate is provided.

Another aspect of the semiconductor device according to the present technology is that in the semiconductor device, the base material of the reinforcing member is made of a material having a smaller coefficient of linear expansion than the base material of the substrate.

In another aspect of the semiconductor device according to the present technology, in the semiconductor device, the wiring portion includes a through wiring portion forming a hole that penetrates a main body portion formed of a base material of the reinforcing member, and the hole portion is provided with a resin portion made of a resin material that fills the inside of the hole.

In another aspect of the semiconductor device according to the present technology, in the semiconductor device, the substrate has a rectangular outer shape in plan view, and the reinforcing member extends along the longitudinal direction of the outer shape of the substrate in plan view. It is set up in the shape of

In another aspect of the semiconductor device according to the present technology, in the semiconductor device, the substrate includes, as the reinforcing members, a plurality of types of reinforcing members formed from mutually different base materials.

An electronic device according to the present technology includes a substrate, a semiconductor element provided on the substrate, and a connecting member that electrically connects the substrate and the semiconductor element, and the substrate is connected to the semiconductor element. The semiconductor device includes a first surface portion to which the semiconductor device is attached, and a second surface portion located above the first surface portion in the vertical direction and on which an electrode portion to which the connection member is connected is disposed.

1 is a side cross-sectional view showing the configuration of a solid-state imaging device according to a first embodiment of the present technology. 2 is an enlarged view of part A in FIG. 1. FIG. FIG. 1 is a plan view showing part of the configuration of a solid-state imaging device according to a first embodiment of the present technology. FIG. 1 is a perspective view showing part of the configuration of a solid-state imaging device according to a first embodiment of the present technology. FIG. 2 is a flow diagram illustrating an example of a method for manufacturing a solid-state imaging device according to a first embodiment of the present technology. FIG. 2 is an explanatory diagram of a method for manufacturing a solid-state imaging device according to a first embodiment of the present technology. FIG. 2 is an explanatory diagram of a method for manufacturing a solid-state imaging device according to a first embodiment of the present technology. FIG. 2 is a partially enlarged side sectional view showing the configuration of a comparative example of the solid-state imaging device according to the first embodiment of the present technology. FIG. 7 is a partially enlarged side cross-sectional view showing the configuration of a first modified example of the solid-state imaging device according to the first embodiment of the present technology. FIG. 3 is a partially enlarged side cross-sectional view showing the configuration of a solid-state imaging device according to a second embodiment of the present technology. FIG. 7 is a side cross-sectional view showing the configuration of a solid-state imaging device according to a third embodiment of the present technology. 12 is an enlarged view of part C in FIG. 11. FIG. FIG. 7 is a flow diagram illustrating an example of a method for manufacturing a solid-state imaging device according to a third embodiment of the present technology. FIG. 7 is an explanatory diagram of a method for manufacturing a solid-state imaging device according to a third embodiment of the present technology. FIG. 7 is an explanatory diagram of a method for manufacturing a solid-state imaging device according to a third embodiment of the present technology. FIG. 7 is a partially enlarged side cross-sectional view showing the configuration of a solid-state imaging device according to a fourth embodiment of the present technology. FIG. 7 is a partial perspective view showing the configuration of a solid-state imaging device according to a fourth embodiment of the present technology. FIG. 7 is a side cross-sectional view showing the configuration of a solid-state imaging device according to a fifth embodiment of the present technology. 19 is an enlarged view of part D in FIG. 18. FIG. It is a top view showing a part of composition of a solid-state imaging device concerning a 5th embodiment of this art. FIG. 7 is a perspective cross-sectional view showing the configuration of a reinforcing member according to a fifth embodiment of the present technology. FIG. 7 is an explanatory diagram of a method for manufacturing a solid-state imaging device according to a fifth embodiment of the present technology. FIG. 7 is an explanatory diagram of a method for manufacturing a solid-state imaging device according to a fifth embodiment of the present technology. It is a top view which shows a part of structure of the 1st modification of the solid-state imaging device based on 5th Embodiment of this technique. It is a top view showing a part of composition of a 2nd modification of a solid-state imaging device concerning a 5th embodiment of this art. FIG. 7 is a partially enlarged side cross-sectional view showing the configuration of a third modified example of the solid-state imaging device according to the fifth embodiment of the present technology. FIG. 1 is a block diagram illustrating a configuration example of an electronic device including a solid-state imaging device according to an embodiment of the present technology.

This technology alleviates stress on the connection member and packages the structure by devising the structure of the board that receives the connection member in a configuration that includes a connection member such as a wire that electrically connects the board and the semiconductor element to each other. The aim is to reduce the size of the device.

Hereinafter, a form for implementing the present technology (hereinafter referred to as an "embodiment") will be described with reference to the drawings. Note that the drawings are schematic and the proportions of dimensions of each part do not necessarily match the actual ones. Furthermore, it goes without saying that the drawings include portions with different dimensional relationships and ratios. In the embodiments described below, an imaging device (solid-state imaging device) including a solid-state imaging device, which is an example of a semiconductor device, will be described as an example of a semiconductor device. The embodiments will be described in the following order.
1. Configuration example of solid-state imaging device according to first embodiment 2. Manufacturing method of solid-state imaging device according to first embodiment 3. Modification of the solid-state imaging device according to the first embodiment 4. Configuration example of solid-state imaging device according to second embodiment 5. Configuration example of solid-state imaging device according to third embodiment 6. Manufacturing method of solid-state imaging device according to third embodiment 7. Configuration example of solid-state imaging device according to fourth embodiment 8. Configuration example of solid-state imaging device according to fifth embodiment 9. Manufacturing method of solid-state imaging device according to fifth embodiment 10. Modification of solid-state imaging device according to fifth embodiment 11. Configuration example of electronic equipment

<1. Configuration example of solid-state imaging device according to first embodiment>
A configuration example of a solid-state imaging device according to a first embodiment of the present technology will be described with reference to FIGS. 1 to 4. Note that the upper and lower sides in FIG. 1 are the upper and lower sides of the solid-state imaging device 1. Further, the side sectional view shown in FIG. 1 corresponds to the sectional view taken along the line BB in FIG.

As shown in FIG. 1, the solid-state imaging device 1 includes a substrate 2, an image sensor 3 as a solid-state imaging element provided on the substrate 2, and wires (bonding wires) 4 as a plurality of connection members. The solid-state imaging device 1 also includes a transparent glass 5 as a cover member that covers the image sensor 3 from above, a rib portion 6 as a support portion that supports the glass 5 with respect to the image sensor 3, and a solid state on the substrate 2. The imaging device 1 includes a sealing resin portion 7 provided at a peripheral portion of the imaging device 1.

The solid-state imaging device 1 has a package structure in which a glass 5 is mounted on the image sensor 3 via a rib portion 6, and a cavity 8 is formed between the image sensor 3 and the glass 5. That is, in the solid-state imaging device 1, the glass 5 is supported by the rib portion 6 provided on the surface 3a, which is the light-receiving side (upper side) surface of the image sensor 3, so as to face the surface 3a side of the image sensor 3. At the same time, the periphery between the image sensor 3 and the glass 5 is sealed to form a cavity 8 as a hollow part.

The substrate 2 is an interposer substrate, and is a flat member having a rectangular plate-like outer shape. The substrate 2 has a front surface 2a that is one board surface on which the image sensor 3 is mounted, a back surface 2b that is the other board surface opposite to the front surface 2a, and four side surfaces 2c. The thickness direction of the substrate 2 is the vertical direction in the solid-state imaging device 1, with the front surface 2a side being the upper side and the back surface 2b side being the lower side.

An image sensor 3 is die-bonded to the surface 2a of the substrate 2. The image sensor 3 is bonded to the surface 2a of the substrate 2 with a die bonding material 9 made of an insulating or conductive adhesive or the like.

The substrate 2 is an organic substrate made of an organic material such as glass epoxy resin, which is a type of fiber-reinforced plastic, and is a circuit board on which wiring layers, electrodes, and a predetermined circuit pattern are formed from a metal material. However, the substrate 2 may be a ceramic substrate made of ceramics such as alumina (Al ₂ O ₃ ), aluminum nitride (AlN), silicon nitride (Si ₃ N ₄ ), or a glass substrate made of glass. It may be a type of substrate.

A plurality of bonding pads 11 are formed on the surface 2a of the substrate 2, which are electrode portions for receiving electrical connection to the image sensor 3. The plurality of bonding pads 11 are formed in a predetermined array on the front surface 2a side of the substrate 2, outside the mounting portion of the image sensor 3. In the example shown in FIG. 3, the plurality of bonding pads 11 are provided along four sides of the substrate 2 at the peripheral edge of the front surface 2a of the substrate 2. However, the manner in which the bonding pads 11 are arranged is not particularly limited. For example, a plurality of bonding pads 11 may be provided on a pair of mutually opposing sides of the substrate 2.

The image sensor 3 is a semiconductor element including a semiconductor substrate made of silicon (Si), which is an example of a semiconductor. The image sensor 3 is a rectangular plate-shaped semiconductor chip, with one plate surface, ie, a front surface 3a, serving as a light-receiving surface, and the other plate surface on the opposite side serving as a back surface 3b. The image sensor 3 has four side surfaces 3c.

A plurality of light receiving elements (photoelectric conversion elements) are formed on the surface 3a side of the image sensor 3. The image sensor 3 is a CMOS (Complementary Metal Oxide Semiconductor) type image sensor. However, the image sensor 3 may be another image sensor such as a CCD (Charge Coupled Device) type image sensor.

The image sensor 3 has, on the front surface 3a side, a pixel region 12 which is a light receiving region in which a large number of pixels are formed, and a peripheral region 13 which is a region around the pixel region 12. In the pixel region 12, a large number of pixels are formed in a predetermined arrangement, such as a Bayer arrangement, and constitute a light receiving section in the image sensor 3. A pixel in the pixel region 12 includes a photodiode as a photoelectric conversion unit having a photoelectric conversion function and a plurality of pixel transistors. A predetermined peripheral circuit is formed in the peripheral region 13. Signals processed by the peripheral circuits are output via wire 4.

On the surface 3a side of the image sensor 3, a color filter and an on-chip lens are attached to each pixel through an antireflection film made of an oxide film or the like, a flattening film made of an organic material, etc., on the semiconductor substrate. are formed accordingly. Light incident on the on-chip lens is received by a photodiode via a color filter, a flattening film, etc.

A plurality of connection pads 15 are formed on the surface 3a of the image sensor 3 as electrode portions for receiving electrical connection to the substrate 2. The connection pad 15 is an element-side electrode portion provided on the surface 3a of the image sensor 3 and to which the wire 4 is connected. The connection pad 15 is formed so as to face the surface 3a and be exposed.

A plurality of connection pads 15 are formed in a predetermined array in a peripheral region 13 on the surface 3a of the image sensor 3. In the example shown in FIG. 3, the plurality of connection pads 15 are provided along four sides of the image sensor 3 at the peripheral edge of the surface 3a of the image sensor 3. However, the manner in which the connection pads 15 are arranged is not particularly limited, and for example, a plurality of connection pads 15 may be provided on a pair of opposing sides of the image sensor 3.

Note that the configuration of the image sensor 3 according to the present technology is not particularly limited. The configuration of the image sensor 3 is, for example, a front side illumination type in which the pixel area 12 is formed on the front side of the semiconductor substrate, or a type in which a photodiode, etc. is arranged in reverse to improve light transmittance. There are also back-side illumination types in which the back side of the semiconductor substrate is the light-receiving surface.

The wire 4 is a conductive wire that electrically connects the substrate 2 and the image sensor 3 to each other. The wire 4 is a thin metal wire made of, for example, Au (gold), Cu (copper), Al (aluminum), or the like.

The wire 4 has one end connected to the bonding pad 11 of the substrate 2 and the other end connected to the connection pad 15 of the image sensor 3, electrically connecting these electrode pads to each other. A plurality of wires 4 are provided according to the number of bonding pads 11. The wire 4 has

bonding portions

4b and 4c formed at both ends of a linear wire body portion 4a as connecting portions to each electrode pad of the bonding pad 11 and the connection pad 15, and as an enlarged diameter portion to the wire body portion 4a. have

As the material for the bonding pad 11 and the connection pad 15, for example, aluminum material is used. Specifically, the bonding pads 11 and the connection pads 15 are formed using a nickel (Ni) plating layer and a gold (Au) plating layer on a layer portion of copper (Cu), tungsten (W), titanium (Ti), etc. It is coated with a plating layer. The bonding pads 11 and the connection pads 15 are formed by appropriately using plating, sputtering, printing, or other film forming methods.

A plurality of bonding pads 11 on the substrate 2 are electrically connected to a plurality of terminal electrodes formed on the back surface 2b side of the substrate 2 via predetermined wiring portions formed within the substrate 2. Each terminal electrode is provided with, for example, a solder ball (not shown) as a connection terminal. For example, the solder balls are formed two-dimensionally in a grid point arrangement along the rectangular outer shape of the image sensor 3, and constitute a BGA (Ball Grid Array). The solid-state imaging device 1 is reflow-mounted on a set board, which is a circuit board having a predetermined circuit, using a group of solder balls.

The glass 5 is an example of a transparent member or a translucent member, and is provided on the surface 3a side of the image sensor 3, parallel to the image sensor 3 and at a predetermined interval. The glass 5 has a rectangular plate-like outer shape, and has a front surface 5a that is an upper plate surface, a back surface 5b that is the opposite plate surface and faces the image sensor 3, and four side surfaces 5c.

The glass 5 is provided to the image sensor 3 via a rib portion 6 and is located above the image sensor 3. The glass 5 is fixedly supported by the rib portion 6 on the surface 3a of the image sensor 3.

The glass 5 has an outer dimension larger than the image sensor 3, and is provided so that the entire image sensor 3 is located within the range of the outer shape when viewed from above. Therefore, the four side surfaces 5c of the glass 5 are located outside the four side surfaces 3c of the image sensor 3, respectively. The four edges of the glass 5 are protruding portions 5d that protrude outward from the outline of the image sensor 3 in a plan view. The glass 5 is adhered by the sealing resin portion 7 at the protruding portion 5d.

Further, the glass 5 has an outer dimension smaller than that of the substrate 2, and is entirely located within the range of the outer shape of the substrate 2 in plan view. Therefore, the four side surfaces 5c of the glass 5 are located inside the four side surfaces 2c of the substrate 2, respectively.

The glass 5 transmits various types of light incident from the surface 5a side through an optical system such as a lens located above it. The light transmitted through the glass 5 reaches the light receiving surface of the image sensor 3 via the cavity 8. The glass 5 has a function of protecting the light receiving surface side of the image sensor 3. Note that as the transparent member or translucent member according to the present technology, for example, a plastic plate, a silicon plate, or the like can be used instead of the glass 5.

The rib portion 6 is an adhesive portion that is interposed between the image sensor 3 and the glass 5 and adheres them while keeping them spaced apart from each other. The rib portion 6 forms a bonding layer between the image sensor 3 and the glass 5, and defines a space between the image sensor 3 and the glass 5 as a cavity 8, which is a sealed space. The lower side of the rib portion 6 is adhered to the front surface 3a of the image sensor 3, and the upper side is adhered to the back surface 5b of the glass 5.

The rib portion 6 is provided in the peripheral region 13 on the surface 3a of the image sensor 3 so as to surround the pixel region 12. The rib portion 6 functions as a sealing portion that hermetically seals the periphery between the image sensor 3 and the glass 5, and together with the glass 5, blocks moisture (steam), dust, etc. from entering the cavity 8 from the outside.

The rib portion 6 is provided along the entire circumference of the image sensor 3 and the glass 5 in a plan view, and is formed endlessly so as to form a rectangular frame shape in a plan view. Therefore, the rib portion 6 has four straight portions 6a along the outline of the image sensor 3 in plan view. In the illustrated example, each straight portion 6a has a rectangular cross-sectional shape. The rib portion 6 has an inner surface 6b and an outer surface 6c in each straight portion 6a (see FIG. 2).

The rib portion 6 is provided at a position within the outer shape of the glass 5 so as to follow the outer edge of the glass 5 in plan view. The rib portion 6 is provided at a position inside the side surface 5c of the glass 5. However, the rib portion 6 may be provided, for example, so that the outer surface 6c is flush with the side surface 5c of the glass 5.

Furthermore, the rib portion 6 is provided at the peripheral portion on the surface 3a of the image sensor 3. In the illustrated example, the rib portion 6 is formed so that its outer side surface 6c is flush with the side surface 3c of the image sensor 3. However, the rib portion 6 may be formed, for example, so that the outer surface 6c is located inside the side surface 3c of the image sensor 3.

The rib portion 6 is formed of an insulating material. Specifically, the material of the rib portion 6 is, for example, a photosensitive adhesive such as a UV (ultraviolet) curable resin that is an acrylic resin, a thermosetting resin such as an epoxy resin, or a mixture thereof. be. However, the material of the rib portion 6 is not particularly limited as long as it is a resin material that functions as an adhesive.

The rib portion 6 is formed on the surface 3a of the image sensor 3 by coating with a dispenser, patterning using photolithography, or the like. Note that the support unit according to the present technology is not limited to one made of resin; for example, a frame-shaped structure made of ceramic such as glass, or inorganic material such as metal or silicon is attached to the image sensor 3 and the glass 5 with adhesive or the like. A structure provided by pasting may also be used.

The rib portion 6 is provided to cover the connection portion of the wire 4 to the image sensor 3. That is, the rib portion 6 is formed at the peripheral edge of the surface 3a of the image sensor 3 so as to include a formation region of the connection pad 15 that receives the connection portion 4c of the wire 4 to the image sensor 3. , the joint portion 4c of the wire 4, and the portion of the wire main body portion 4a on the joint portion 4c side are buried. However, the region where the rib portion 6 is formed on the surface 3a of the image sensor 3 may be located inside the region where the connection pad 15 is formed.

The sealing resin portion 7 is provided around the image sensor 3 and the glass 5 on the substrate 2. The sealing resin portion 7 covers most of the wire main body portion 4a of the wire 4 and the connection portion of the wire 4 to the substrate 2. That is, the sealing resin portion 7 is formed so as to embed the bonding pad 11, the bonding portion 4b of the wire 4, and the portion extending outward from the rib portion 6 of the wire main body portion 4a.

The sealing resin part 7 covers and seals the entire circumference of the image sensor 3 and the glass 5 on the substrate 2. Specifically, the sealing resin portion 7 fills the portion of the wire 4 extending outward from the rib portion 6, and fills the peripheral portion of the substrate 2 on which the bonding pad 11 is formed, and the side surface 3c of the image sensor 3. , covers the outer surface 6c of the rib portion 6, the back surface 5b of the protruding portion 5d of the glass 5, and the lower part of the side surface 5c.

The sealing resin part 7 is formed in a frame shape along the rectangular outer shape of the substrate 2 in plan view, and has four side parts along each side of the rectangular outer shape of the substrate 2. Furthermore, the sealing resin portion 7 has a side surface portion 7a that is flush with and continuous with the side surface 2c of the substrate 2, and an upper surface portion 7b that is located at a lower position than the surface 5a of the glass 5 (see FIG. 2). . In the illustrated example, the upper surface portion 7b of the sealing resin portion 7 is a sloped surface portion that gradually becomes lower from the inside (glass 5 side) to the outside.

The sealing resin part 7 is different from the configuration in which the image sensor 3 is mounted on the substrate 2 and these are connected by wires 4, and the glass 5 is mounted on the image sensor 3 via the rib part 6. It is formed by curing a resin material around the image sensor 3 and the glass 5. The sealing resin portion 7 is formed into a predetermined shape by, for example, injection molding using a mold, potting processing using a dispenser, or the like.

The material of the sealing resin portion 7 is, for example, a thermosetting resin containing silicon oxide as a main component or alumina as a filler. Examples of the resin material forming the sealing resin part 7 include thermosetting resins such as phenolic resins, silicone resins, acrylic resins, epoxy resins, urethane resins, silicone resins, and polyetheramide resins; Thermoplastic resins such as polyamideimide, polypropylene, and liquid crystal polymers, photosensitive resins such as UV curable resins that are acrylic resins, rubber, and other known resin materials may be used singly or in combination. Note that the sealing resin portion 7 has insulation properties.

Furthermore, the sealing resin portion 7 may be formed of a material having light-shielding properties, such as a black resin material containing a black pigment such as carbon black or titanium black. Thereby, the sealing resin part 7 becomes a black part, and the sealing resin part 7 can function as a light shielding part.

Regarding the relationship between the sealing resin part 7 and the glass 5, the glass 5 has at least a part of the upper side of the side surface 5c as an exposed surface part 5e that is not covered with the sealing resin part 7 (see FIG. 2). In the example shown in FIG. 2, the sealing resin part 7 covers most of the lower part of the side surface 5c of the glass 5, and exposes the upper part to form an exposed surface part 5e. Note that the sealing resin portion 7 is formed so that exposed surface portions 5e exist all around the four side surfaces 5c of the glass 5.

In the example shown in FIG. 2, approximately 3/4 of the lower side of the side surface 5c is covered with the sealing resin portion 7 in the thickness direction of the glass 5, which is the vertical direction. In other words, approximately 1/4 of the upper side of the side surface 5c of the glass 5 (see reference numeral A1) is not covered with the sealing resin portion 7 and is an exposed surface portion 5e. Note that the vertical range of the exposed surface portion 5e on the side surface 5c of the glass 5 is not particularly limited. Further, the sealing resin portion 7 may be formed to cover the entire side surface 5c of the glass 5, or may be formed to expose the entire side surface 5c.

In the solid-state imaging device 1 having the above configuration, light transmitted through the glass 5 passes through the cavity 8 and is received by the light receiving element constituting each pixel arranged in the pixel area 12 of the image sensor 3. detected.

The solid-state imaging device 1 having the above configuration has the following configuration regarding the substrate 2 to which one end of the wire 4 is connected. That is, the surface portion of the substrate 2 to which one end of the wire 4 is connected is positioned above the surface 2a to which the image sensor 3 is fixed.

The substrate 2 has a surface 2a as a first surface portion to which the image sensor 3 is attached, and a second surface portion as a second surface portion on which a bonding pad 11, which is located above the surface 2a in the vertical direction and receives the connection of the wire 4, is disposed. It has an upper stage surface part 22. In this way, the substrate 2 has the surface 2a to which the image sensor 3 is die-bonded as the lower surface, and the upper surface 22 located around the surface 2a at a higher position than the surface 2a. It has the structure of

The substrate 2 has four protruding edges 23 formed at the peripheral edge of the substrate 2 along the outer shape of the substrate 2 in a plan view, as the upper surface portion 22 . That is, the substrate 2 has a substrate body 20 which is a rectangular plate-like flat plate portion forming the front surface 2a, and a peripheral wall portion 21 formed in a frame shape by four projecting edges 23 on the upper side of the substrate body 20. . The four protruding edges 23 forming the peripheral wall portion 21 are convex portions that protrude from the surface 2a of the substrate 2.

The substrate 2 is formed into a flat box shape with the upper side open, by the substrate main body 20 and the peripheral wall 21. In other words, the substrate 2 is a cavity substrate in which a concave portion 25 is formed on the upper side of the substrate main body portion 20 by the four projecting edges 23 . The image sensor 3 is arranged within the recess 25 . The recess 25 is a space with an open upper side, has a rectangular opening shape corresponding to the outer shape of the image sensor 3, and is formed in a range that occupies most of the substrate 2 in a plan view. In the example shown in FIG. 3, the recess 25 is formed in the center of the substrate 2 in plan view.

The four projecting edges 23 forming the recess 25 together with the board body 20 have an inner surface 26 formed perpendicular to the surface 2a and forming the side surface of the recess 25, and an outer surface 27 that is the opposite surface. have The inner surface 26 is a stepped surface portion formed between the surface 2 a and the upper step surface portion 22 . The protruding edge portion 23 is provided so that the outer surface 27 is continuous with the side surface 2c of the substrate 2 and is flush with the surface. However, the projecting edge portion 23 may be provided so that the outer surface 27 is located inside or outside of the side surface 2c of the substrate 2.

The protruding edge portion 23 is formed so that the inner surface 26 is located inside the side surface 5c of the glass 5. That is, the upper stage surface portion 22 has an inner peripheral edge located below an outer peripheral edge of the protruding portion 5d of the glass 5. However, the projecting edge portion 23 may be provided so that the entire portion is located outside the range of the outer shape of the glass 5 in plan view.

The recess 25 is a rectangular hole in plan view formed by the four inner surfaces 26 and the surface 2a. In the substrate 2, the portion where the recess 25 is formed is a portion where the plate thickness is thinner than the peripheral portion where the recess 25 is not formed by the depth of the recess 25. The recess 25 has an opening dimension larger than the external dimension of the image sensor 3, and is formed so that the entire image sensor 3 is accommodated within the recess 25 when viewed from above.

In the substrate 2 as described above, a plurality of bonding pads 11 are formed on the upper surface portion 22 of each projecting edge portion 23. That is, the bonding pad 11 is formed so as to be exposed facing the upper surface portion 22. In this embodiment, the upper surface portions 22 of the four projecting edges 23 are located on a common virtual plane.

In the solid-state imaging device 1 according to the present embodiment, the upper surface portion 22 is located at a height that is equal to or lower than the height of the connection pad 15 of the image sensor 3. As shown in FIG. 2, the height position of the connection pad 15 is the same or approximately the same as the height position H1 of the surface 3a of the image sensor 3. In the example shown in FIG. 2, the height position H2 of the upper stage surface portion 22 is located below the height position H1 of the connection pad 15 by a dimension ΔH. Note that the height position H2 of the upper stage surface portion 22 is the same or approximately the same as the height position of the bonding pad 11.

The size of the dimension ΔH depends on the thickness C1 of the image sensor 3 (thickness of the chip), but is, for example, a value within the range of 180 to 480 μm. The thickness C1 of the image sensor 3 is, for example, a value within the range of 400 to 600 μm. Note that the projecting edge portion 23 may be formed so that the upper surface portion 22 is located at the same height position or approximately the same height position as the surface 3a of the image sensor 3.

Further, as shown in FIG. 2, the height B1 of the protruding edge portion 23 forming the upper surface portion 22 is, for example, a value within the range of 100 to 400 μm. Here, the height B1 of the projecting edge portion 23 is the height of the projecting edge portion 23 with respect to the surface 2a of the substrate 2, and is the difference in height between the surface 2a and the upper surface portion 22. The height B1 of the projecting edge 23 corresponds to the depth of the recess 25 in the substrate 2.

The height B1 of the protruding edge portion 23 is defined as a value within the range of, for example, the thickness C1 of the image sensor 3 to the thickness C1+thickness C2 of the die bonding material 9. The thickness C2 of the die-bonding material 9 is, for example, about 100 μm. When the height B1 of the projecting edge portion 23 is the same as the thickness C1 of the image sensor 3, the height position of the upper surface portion 22 is the same as the thickness C2 of the die bonding material 9 with respect to the surface 3a of the image sensor 3. minute lower. Further, when the height B1 of the projecting edge portion 23 is the same as the thickness C1 of the image sensor 3 + the thickness C2 of the die-bonding material 9, the height position of the upper surface portion 22 is the same as that of the surface 3a of the image sensor 3. The height position will be the same.

Furthermore, in the configuration in which the image sensor 3 is provided in the recess 25 formed by the peripheral wall 21 in the substrate 2, the four side surfaces 3c of the image sensor 3 are opposed to the inner surfaces 26 of the four projecting edges 23. , a gap 28 is formed between the side surface 3c and the inner surface 26 (see FIG. 2). The dimension D1 of the gap 28 is desirably at least about 50 μm from the viewpoint of ensuring the width of the fillet 9a of the die-bonding material 9 and the chip mounting accuracy of the image sensor 3. The fillet 9a is a protruding portion of the die-bonding material 9 from the outer shape of the image sensor 3 in a plan view.The fillet 9a increases in volume within the gap 28 by using the protruding edge 23 as a stopper against outward spread, and forms a part of the side surface 3c of the image sensor 3. It is formed to cover the lower part.

In the configuration in which the substrate 2 has the upper surface part 22 on which the bonding pad 11 is arranged as described above, the wire 4 is gently moved toward the connection pad 15 while raising the wire main body part 4a from the joint part 4b with respect to the bonding pad 11. It is arranged in a downward sloping shape. The wire 4 has a curved portion 4d that forms a corner between the rising portion from the bonding portion 4b and the downwardly sloping portion toward the connection pad 15, at a portion of the wire body portion 4a located above the bonding portion 4b.

The wire 4 has the curved portion 4d of the wire main body 4a as the upper end of the wire 4, and is arranged so that the curved portion 4d does not come into contact with the glass 5. That is, the entire wire 4 is located below the height of the back surface 5b of the glass 5.

Note that the shape of the portion of the substrate 2 that forms the upper surface portion 22 is not particularly limited. The portion (convex portion) forming the upper stage surface portion 22 may be formed as a portion having an appropriate shape at one or more locations depending on the arrangement of the bonding pads 11 and the like.

For example, in a configuration in which a plurality of bonding pads 11 are arranged on a pair of mutually opposing sides of the substrate 2, the protruding edges are arranged along two sides of the substrate 2 according to the arrangement area of the plurality of bonding pads 11. A structure in which the portion 23 is formed may also be used. Further, the portion forming the upper stage surface portion 22 may be formed so as to partially form a convex portion on each side of the substrate 2 depending on the location where the bonding pad 11 is formed. Further, when forming the upper stage surface portions 22 at a plurality of locations according to the plurality of bonding pads 11, the plurality of upper stage surface portions 22 may be formed at different height positions. Further, in this embodiment, the protruding edges 23 provided along the four sides of the substrate 2 have a common width dimension, but for example, the protruding edges 23 provided on each side of the substrate 2 may have different widths. Alternatively, the projecting edge portions 23 on each side may have partially different widths.

<2. Manufacturing method of solid-state imaging device according to first embodiment>
An example of a method for manufacturing the solid-state imaging device 1 according to the first embodiment of the present technology will be described with reference to FIGS. 5 to 7.

As shown in FIG. 5, in the method for manufacturing the solid-state imaging device 1, first, a step of preparing a substrate (cavity substrate) is performed (S10). Specifically, as shown in FIG. 6A, a substrate member 10 is prepared, which is a collective substrate in which a plurality of substrate portions 2A, which serve as the substrate 2 in the solid-state imaging device 1, are two-dimensionally connected.

On the front side of the substrate member 10, a portion of the substrate 2 that will become the peripheral wall portion 21 forming the upper surface portion 22 is formed as a lattice-shaped protrusion portion 31. As a result, a recess 25 is formed in each substrate portion 2A. A plurality of bonding pads 11 are formed at predetermined portions on the upper surface 31a of the protrusion portion 31 that forms the upper surface portion 22 of the substrate 2.

For example, if the substrate member 10 is a ceramic substrate with a multilayer structure in which sheet-like members made of ceramic materials or the like are laminated, the following manufacturing method can be used. After forming a penetrating opening in each of the sheet-like members to be laminated as a portion for forming the recesses 25, the sheet-like members are laminated to form the substrate member 10 having a plurality of recesses 25. . In addition, as another method, the substrate member 10 having the recesses 25 can be obtained by forming the portions that will become the recesses 25 using a processing device such as a drill in a state in which sheet-like members are stacked.

Examples of multilayer ceramic substrates include low-temperature fired laminated ceramic substrates called LTCC (Low Temperature Co-fired Ceramics) substrates. In addition, when the substrate member 10 is a resin substrate with a multilayer structure in which resin sheet-like members are laminated, the substrate member 10 having a plurality of recesses 25 can be formed by using the same manufacturing method as in the case of a multilayer ceramic substrate. Obtainable.

Next, as shown in FIG. 5, a die bonding process is performed (S20). In this step, as shown in FIG. 6B, a step of providing the image sensor 3 on the substrate 2 is performed. That is, die bonding is performed to die bond the image sensor 3 to each substrate portion 2A of the substrate member 10. The image sensor 3 is bonded to a predetermined mounting portion on the surface 2a within the recess 25 using a die bonding material 9 such as an insulating or conductive resin paste.

Next, as shown in FIG. 5, a wire bonding process is performed (S30). In this step, as shown in FIG. 6C, a step of providing a wire 4 for electrically connecting the substrate 2 and the image sensor 3 is performed. That is, wire bonding is performed in which the bonding pad 11 and the connection pad 15 of the image sensor 3 are electrically connected by connecting with the wire 4. As the wire bonding, for example, reverse bonding is performed in which the bonding pad 11 side is the first bond and the connection pad 15 side is the second bond.

Next, as shown in FIG. 5, a glass mounting process is performed (S40). In this step, as shown in FIG. 6D, a step of providing glass 5 on image sensor 3 via rib portion 6 is performed. Specifically, first, rib resin, which is a resin material that will become the rib portion 6, is applied to a predetermined portion of the surface 3a of the image sensor 3 in a rectangular frame shape along the outer shape of the image sensor 3 in plan view using a dispenser or the like. Ru. Here, the rib resin is applied so as to cover the connection portion of the wire 4 to the connection pad 15. Note that the rib resin may be formed by patterning using photolithography or the like.

Next, a step of mounting the glass 5 on the rib resin is performed. The glass 5 is mounted on the image sensor 3 so as to close the upper opening of the rib resin coated in a frame shape. After that, a step of curing the rib resin is performed. When the rib resin has thermosetting properties, a heating step (curing) is performed to harden the rib resin. As the rib resin hardens, the glass 5 is adhesively fixed on the image sensor 3 via the rib portion 6 formed of the rib resin, and a cavity 8, which is a sealed space, is formed.

Subsequently, as shown in FIG. 5, a step of forming a sealing resin portion is performed (S50). In this step, as shown in FIG. 7A, the solid-state imaging is performed so as to cover the portions around each image sensor 3 and the glass 5 on the substrate member 10, as well as the portion of the wire 4 extending outward from the rib portion 6. In the device 1, a sealing resin 37 that becomes the sealing resin portion 7 is formed. The sealing resin 37 is formed from a predetermined resin material into a predetermined shape by, for example, injection molding using a mold for molding the resin portion, potting processing using a dispenser, or the like.

After a ball mounting process for forming solder balls on the back side of the substrate member 10 is performed, a singulation process is performed as shown in FIG. 5 (S60). In this step, dicing is performed in which the structure provided on the substrate member 10 and each substrate portion 2A is divided into individual pieces by device. Specifically, as shown in FIG. 7B, the dicing blade 29 separates the sealing resin 37 and the substrate member 10 so that the substrate member 10 is separated into individual substrate portions 2A. be exposed.

Through the manufacturing process described above, a plurality of solid-state imaging devices 1 are obtained, as shown in FIG. 7C. Note that the method for manufacturing the solid-state imaging device 1 includes first manufacturing a plurality of substrates 2 by cutting the substrate member 10 into pieces, and then subjecting the substrates 2 to each process such as steps S20 to S50 described above. You may also use the method of

According to the solid-state imaging device 1 according to the present embodiment as described above, stress on the wire 4 that electrically connects the substrate 2 and the image sensor 3 to each other can be reduced, and the package can be made smaller. be able to.

The solid-state imaging device 1 has an upper surface portion 22 provided on the substrate 2 at a higher position relative to the surface 2a, which is the fixed surface of the image sensor 3, as a surface portion on which the bonding pad 11 to which one end of the wire 4 is connected is arranged. has. According to this configuration, it is possible to reduce the level difference between the surface 3a of the image sensor 3 on which the connection pad 15 that receives the connection to the other end of the wire 4 is arranged and the surface of the substrate 2 on which the bonding pad 11 is disposed. can. As a result, even if the thickness of the image sensor 3 is increased to prevent warpage of the image sensor 3, for example, the difference in level between the surfaces on which the bonding pads 11 and the connection pads 15 are disposed can be suppressed from increasing. Therefore, the stress acting on the wire 4 can be reduced.

For example, as shown in FIG. 8, according to a configuration in which the bonding pad 11 is arranged on the same plane as the surface 2a on which the image sensor 3 is attached on the substrate 2, the bonding pad 11 is arranged on the same plane as the surface 2a on which the image sensor 3 is attached. The height difference between the surface on which the pads 11 are provided and the surface on which the connection pads 15 are provided becomes large. For this reason, when the thickness of the image sensor 3 is increased, stress on the wire 4 increases. In particular, the stress on the wire neck 4e on the side where the wire 4 connects to the image sensor 3 increases. Deterioration of stress on the wire neck 4e may cause problems such as wire breakage of the wire 4.

Therefore, by providing the upper surface portion 22 on which the bonding pads 11 are arranged on the substrate 2 as described above, it is possible to minimize the difference in height between the connection portions on both ends of the wire 4, thereby reducing stress on the wire 4, especially Stress on the wire neck can be reduced. Note that in FIG. 8, the same reference numerals are given to the components corresponding to the respective components of the solid-state imaging device 1 according to the present embodiment.

In the present embodiment, the upper surface portion 22 of the substrate 2 is provided at a height that is equal to or lower than the height of the connection pad 15 of the image sensor 3. According to such a configuration, the connection portion of the wire 4 to the bonding pad 11 can be made to have a height equivalent to or lower than the connection portion of the wire 4 to the connection pad 15. Thereby, stress on the wire 4 can be effectively reduced.

Furthermore, in the substrate 2, the upper surface portion 22 is formed as the upper surface portion of the four projecting edges 23 forming the recess 25 in which the image sensor 3 is disposed. According to such a configuration, the four projecting edges 23 can act as stoppers for the die bonding material 9 that tends to protrude and spread outward from the outline of the image sensor 3 in plan view. Thereby, the fillet 9a of the die-bonding material 9 can be accommodated within the gap 28, so that the package can be made smaller.

That is, according to the configuration shown in FIG. 8, from the viewpoint of preventing the bonding pad 11 from being contaminated by the protruding portion 9b of the die bonding material 9 from the outer shape of the image sensor 3 in plan view, the side surface 3c of the image sensor 3 and It is necessary to ensure a distance E1 between the bonding pad 11 and the bonding pad 11. This increases the size of the substrate 2 and becomes a factor that prevents miniaturization of the package.

In this regard, as described above, by having the protruding edge portion 23 forming the upper surface portion 22 on the substrate 2, it is possible to restrict the protrusion of the die bonding material 9 to the outside, and it is possible to reduce the fillet width of the die bonding material 9. . This eliminates the need to ensure a distance from the image sensor 3 to the bonding pad 11 in order to avoid contamination due to the protruding portion of the die bonding material 9, and the package can be made smaller. Specifically, according to the solid-state imaging device 1 according to the present embodiment, the distance between the image sensor 3 and the bonding pad 11 can be reduced by about 300 to 400 μm, for example, in comparison with the configuration shown in FIG. It becomes possible.

Further, according to the configuration shown in FIG. 8, since the difference in height between the bonding pad 11 and the connection pad 15 is large, when reverse bonding is performed as the bonding of the wire 4, for example, the wiring shape of the wire 4 must be formed in a predetermined form. In order to obtain this, it is necessary to provide the bonding pad 11 at a position separated from the image sensor 3 by a certain distance. For this reason, there is a problem in that it is difficult to miniaturize the package from the viewpoint of securing a location for the bonding pad 11 on the outer peripheral side of the substrate 2. In addition, when reverse bonding is performed, it is necessary to secure a certain amount of margin outside the image sensor 3 on the board 2 from the viewpoint of design clearance so that the wire 4 does not come into contact with adjacent components on the collective board during the manufacturing process. For this reason, it is difficult to miniaturize the package.

Therefore, according to the configuration in which the substrate 2 has the upper surface portion 22 on which the bonding pads 11 are arranged as described above, the height difference between the bonding pads 11 and the connection pads 15 can be reduced. As a result, the area of the substrate 2 required to obtain a predetermined wiring shape of the wire 4, that is, the distance of the bonding pad 11 to the image sensor 3, can be reduced, and the package can be made smaller. can. Furthermore, even when reverse bonding is performed, it is possible to prevent the wire 4 from interfering with the components on the collective board.

Further, according to the configuration in which the upper surface portion 22 on which the bonding pad 11 is arranged, the bonding pad 11 can be brought closer to the image sensor 3, so that the length of the wire 4 can be reduced in comparison with the configuration shown in FIG. 8, for example. Can be shortened. Thereby, the reliability of the connection configuration of the wires 4 can be improved.

Furthermore, by shortening the wire 4, the electrical resistance caused by the wire 4 can be reduced, so that it is possible to increase the speed of signal transmission between the substrate 2 and the image sensor 3. Furthermore, by shortening the wire 4, the distance between the wires can be shortened, for example, in a configuration in which an MLCC (Multi-Layer Ceramic Capacitor) is embedded in the protrusion 23 of the substrate 2, so solid-state imaging A decoupling effect such as suppression of electrical noise generated by the device 1 can be effectively obtained.

Further, according to the configuration in which the substrate 2 has the upper surface portion 22 on which the bonding pads 11 are arranged, the outer peripheral side portion of the substrate 2 can be narrowed compared to the configuration shown in FIG. 8, for example, so that the sealing The amount of resin forming the resin portion 7 can be reduced. Thereby, the stress (side stress) acting on the glass 5 due to expansion and contraction of the sealing resin portion 7 due to temperature changes etc. can be reduced, and the risk of cracks occurring in the glass 5 can be reduced. Furthermore, since the stress acting on the glass 5 is reduced, peeling of the rib portion 6 from the glass 5 can be suppressed.

In particular, in this embodiment, the sealing resin portion 7 is formed so that an exposed surface portion 5e is formed on the side surface 5c of the glass 5. According to such a configuration, the stress acting on the glass 5 from the sealing resin portion 7 can be effectively reduced, and cracks in the glass 5 and peeling of the rib portion 6 can be effectively suppressed.

As described above, according to the solid-state imaging device 1 according to the present embodiment, it is possible to reduce the package size, reduce the stress on the wire 4, and reduce the stress on the glass 5.

Further, by having the upper surface part 22 in the substrate 2, the amount of resin forming the sealing resin part 7 can be reduced, so that it can be used as a heat conductive member near the wire 4 in comparison with the structure shown in FIG. 8, for example. A part of the sealing resin part 7 can be replaced with a protruding edge part 23 of the substrate 2 including a bonding pad 11 and a wiring part made of copper or the like. Thereby, the projecting edge portion 23 acts as a heat dissipation portion, and the heat dissipation performance of the solid-state imaging device 1 can be improved.

Furthermore, in the solid-state imaging device 1 according to the present embodiment, the rib portion 6 is provided on the connection portion of the wire 4 to the connection pad 15 of the image sensor 3. According to such a configuration, for example, the space on the surface 3a of the image sensor 3 can be used effectively compared to a configuration in which the rib portion 6 is provided inside the connection portion of the wire 4 to the connection pad 15. This allows the package to be made more compact.

Furthermore, according to the configuration in which the substrate 2 has the protruding edge portion 23 forming the upper surface portion 22, the circumferential edge portion of the substrate 2 is partially thickened by the protruding edge portion 23, and a reinforcing effect can be obtained. Thereby, the rigidity of the substrate 2 can be improved, so that warpage of the substrate 2 can be reduced. As a result, warpage of the pixel surface of the image sensor 3 mounted on the substrate 2 and warpage of the entire package can be reduced, and high reliability in the performance of the solid-state imaging device 1 can be obtained.

<3. Modification of the solid-state imaging device according to the first embodiment>
A modification of the solid-state imaging device 1 according to the first embodiment of the present technology will be described. As shown in FIG. 9, in this modification, the rib portion 6 interposed between the image sensor 3 and the glass 5 is located inside (on the inner peripheral side) of the area where the connection pad 15 is formed on the surface 3a of the image sensor 3. It is set in. In other words, the rib portion 6 is formed so that the outer surface 6c is located inside the connection pad 15.

In such a configuration, the plurality of connection pads 15 are located in an area outside the rib portion 6 on the surface 3a of the image sensor 3. Further, the sealing resin portion 7 is formed to cover the entire wire 4 , the connection portions of the wire 4 to each of the substrate 2 and the image sensor 3 , and the bonding pad 11 and the connection pad 15 .

As in the configuration of this modification, the region where the rib portion 6 is formed on the surface 3a of the image sensor 3 may be an area inside the connection pad 15. According to such a configuration, for example, normal wire bonding in which the connection pad 15 side is the first bond and the bonding pad 11 side is the second bond can be performed relatively easily. Note that the region where the rib portion 6 is formed on the surface 3a of the image sensor 3 may be, for example, an area outside (on the outer peripheral side) of the area where the connection pad 15 is formed.

<4. Configuration example of solid-state imaging device according to second embodiment>
A configuration example of a solid-state imaging device 50 according to a second embodiment of the present technology will be described with reference to FIG. 10. In each embodiment described below, the same name or the same reference numeral will be used for the same or corresponding configuration as in the first embodiment, and the explanation of the overlapping content will be omitted as appropriate.

As shown in FIG. 10, in the solid-state imaging device 50 according to this embodiment, the four inner surfaces 26 forming the recess 25 of the substrate 2 are sloped surfaces that descend from the outside to the inside. That is, the inner surface 26 that the substrate 2 has as a step surface is inclined in the vertical direction from the surface 2a side (lower side) to the upper step surface section 22 side (upper side) so that the distance between the inner surface 26 and the image sensor 3 is gradually widened. making a face.

In other words, the inner surface 26 gradually increases the size of the gap 28 (see FIG. 2, dimension D1) between the inner surface 26 and the side surface 3c of the image sensor 3, which is a surface perpendicular to the surface 2a, from the lower side to the upper side. The slope is slanted in the direction of widening. According to such a configuration, the recess 25 formed by the surface 2a and the four inner surfaces 26 becomes a part forming a space along the shape of an inverted quadrangular truncated pyramid. That is, the recess 25 having a rectangular opening shape in plan view has an opening area in a planar cross section that gradually increases from the bottom to the top.

In this configuration where the inner surface 26 is an inclined surface, the protruding edge portion 23 has a trapezoidal cross-sectional shape. In the example shown in FIG. 10, the inclination angle α1 of the inner surface 26 with respect to the vertical plane F1 along the up-down direction is about 15°. However, the magnitude of the inclination angle α1 is not limited.

Furthermore, in this embodiment, a plurality of bonding pads 11 are formed on the inner surface 26 to receive connection to one end of each wire 4. That is, the bonding pad 11 is formed so as to face the inner surface 26 and be exposed. Therefore, in the present embodiment, the substrate 2 has a surface 2a as a first surface portion to which the image sensor 3 is attached, and a bonding pad 11 which is located above the surface 2a in the vertical direction and receives the connection of the wire 4. It has an inner surface 26 as a second surface portion.

In the solid-state imaging device 50 according to the present embodiment, the upper surface portion 22 is located at a height above the height position of the connection pad 15 of the image sensor 3, and the bonding pad 11 is located at the upper part of the inner surface 26. It is provided. Further, the bonding pad 11 has its upper end located above the height position of the connection pad 15 and its lower end located below the height position of the connection pad 15. That is, the connection pad 15 is located within the formation range of the bonding pad 11 in the vertical direction. Note that the upper stage surface portion 22 may be located at a height that is equal to or lower than the height of the connection pad 15.

In the configuration in which the bonding pad 11 is disposed on the inclined inner surface 26 of the substrate 2, the wire 4 extends laterally from the joint 4b to the bonding pad 11 with the wire main body 4a facing inward, and the wire main body 4a The joint portion 4c is connected to the connection pad 15 in a gentle mountain shape. The wire 4 is provided so that the entire wire 4 is located below the back surface 5b of the glass 5.

In the solid-state imaging device 50 according to the present embodiment, the inner surface 26 forming the recess 25 in the substrate 2 is formed as an inclined surface that slopes downward from the outside to the inside. According to such a configuration, the size of the gap 28 between the image sensor 3 and each of the projecting edges 23 can be gradually widened from the lower side to the upper side. Thereby, regarding the die bonding material 9 forming the fillet 9a so as to fill the lower part of the gap 28, the amount of resin forming the die bonding material 9 can be easily controlled. That is, according to the configuration in which the inner surface 26 is an inclined surface, the size of the gap 28 increases from the bottom to the top, making it easier to secure the volume of the space in the gap 28, and reducing the allowable amount of resin forming the fillet 9a. Since the capacity can be increased, the amount of resin can be easily controlled.

Furthermore, in the solid-state imaging device 50 according to the present embodiment, the bonding pad 11 to which the wire 4 is connected is provided on the inner surface 26 of the protrusion 23 . According to such a configuration, the bonding pad 11 can be brought closer to the image sensor 3 more easily than, for example, a configuration in which the bonding pad 11 is provided on the upper surface portion 22. Thereby, the length of the wire 4 can be shortened, the reliability of the connection configuration of the wire 4 can be improved, and the speed of signal transmission by the wire 4 can be increased.

<5. Configuration example of solid-state imaging device according to third embodiment>
A configuration example of a solid-state imaging device 60 according to a third embodiment of the present technology will be described with reference to FIGS. 11 and 12. The solid-state imaging device 60 according to this embodiment differs from the above-described embodiments in that the portion of the substrate 2 that forms the upper surface portion 22 is formed of a member different from the member that forms the substrate body portion 20.

As shown in FIGS. 11 and 12, in the solid-state imaging device 60, the upper surface section 22 on which the bonding pad 11 is arranged is formed of a frame 62, which is a different member from the member forming the surface 2a. That is, the board 2 is composed of a rectangular plate-shaped main board 61, which is a member forming the board main body 20 with the upper surface as the surface 2a, and a rectangular frame-shaped frame 62 provided on the main board 61. ing. The frame 62 constitutes a peripheral wall portion 21 that forms projecting edges 23 on all sides.

The frame 62 forms a frame-shaped portion provided on the main body substrate 61 so as to surround the image sensor 3, and constitutes the peripheral wall portion 21 on the main body substrate 61. The frame 62 has four linear sides 63 so as to form a rectangular shape (including a square shape) in a plan view corresponding to the shape of the main body substrate 61 in a plan view, and these sides 63 form a frame shape. It is composed of Each side portion 63 has a rectangular cross-sectional shape. The inner surface 26 of the projecting edge 23 is formed by the inner side (inner peripheral side) of the side 63, and the outer surface 27 of the projecting edge 23 is formed by the outer (outer peripheral) surface of the side 63. .

The upper surface of each side portion 63 forms an upper surface portion 22 on which the bonding pad 11 is arranged. Further, the frame 62 has a lower surface 64 that is a surface opposite to the surface forming the upper stage section 22 .

The configuration in which the frame 62 is provided on the main body substrate 61 forms a recess 25 in which the image sensor 3 is placed. The recess 25 is formed by a surface 2 a formed by the upper surface of the main body substrate 61 and an inner surface 26 formed by the inner surfaces of the four sides 63 of the frame 62 .

The frame 62 is a ceramic frame made of ceramics such as alumina (Al ₂ O ₃ ), aluminum nitride (AlN), and silicon nitride (Si ₃ N ₄ ) as a base material. The frame 62 is a circuit frame in which a wiring layer, electrodes, and a predetermined circuit pattern are formed using a metal material. Note that the frame 62 may be made of, for example, an organic material such as glass epoxy resin, which is a type of fiber-reinforced plastic, or glass.

A plurality of bonding pads 11 are formed on the upper surface of the frame 62. The plurality of bonding pads 11 are electrically connected to a plurality of terminal electrodes formed on the lower surface 64 side of the frame 62 via predetermined wiring portions formed within the frame 62. Each terminal electrode is provided with a solder ball 65 as a connection terminal. The solder balls 65 are formed, for example, in a two-dimensional lattice-like arrangement.

The frame 62 is fixed to the main body board 61 by reflow mounting with a group of solder balls 65. Each terminal electrode formed on the lower surface 64 of the frame 62 is electrically connected via a solder ball 65 to an electrode portion formed so as to face and be exposed on the upper surface of the main body substrate 61.

An underfill portion 66 that covers the plurality of solder balls 65 is provided between the main substrate 61 and the frame 62. The underfill portion 66 is formed to fill the gap between adjacent solder balls 65, and seals the gap between the main body substrate 61 and the frame 62.

In the example shown in FIG. 12, the underfill portion 66 is formed to enclose a plurality of solder balls 65 interposed between the main body substrate 61 and the frame 62. That is, the underfill portion 66 has an inner side surface portion 66a located inside the area where the solder balls 65 group is arranged, and an outer side surface portion 66b located outside the same area. The inner surface portion 66a of the underfill portion 66 forms an interface with the fillet 9a of the die bonding material 9. The outer side surface portion 66b of the underfill portion 66 forms the side surface portion of the substrate 2 together with the side surface 2c and the like.

The underfill portion 66 is a liquid curable resin portion formed by curing paste or liquid resin. The underfill portion 66 is, for example, a capillary flow type (capillary underfill) formed by flowing a liquid resin with relatively low viscosity using capillary phenomenon. As the material for the underfill portion 66, for example, a thermosetting resin such as an epoxy resin, or a thermosetting resin in which a filler containing silicon oxide as a main component is dispersed is used.

<6. Manufacturing method of solid-state imaging device according to third embodiment>
An example of a method for manufacturing a solid-state imaging device 60 according to a third embodiment of the present technology will be described with reference to FIGS. 13 to 15.

As shown in FIG. 13, in the method for manufacturing the solid-state imaging device 60, first, a step of preparing a substrate (normal substrate) is performed (S110). Specifically, as shown in FIG. 14A, a substrate member 70 is prepared, which is a collective substrate in which a plurality of substrate parts 61A, which become the main body substrate 61 forming the substrate main body 20 in the solid-state imaging device 60, are two-dimensionally connected. Ru.

Next, as shown in FIG. 13, a frame joining process is performed (S120). In this step, as shown in FIG. 14B, a frame member 72 in which a plurality of frame portions 62A, which become the frame 62 forming the peripheral wall portion 21 of the solid-state imaging device 60 are two-dimensionally connected, is bonded to a substrate member by a group of solder balls 65. Reflow mounting is performed on the surface 70a of 70. A plurality of bonding pads 11 are formed at predetermined locations on the upper surface 72a of the frame member 72.

Next, as shown in FIG. 13, a step of forming an underfill portion is performed (S130). In this step, as shown in FIG. 14C, an underfill portion 66 is formed at the joint between the substrate member 70 and the frame member 72 by the solder balls 65.

Specifically, a liquid resin material (e.g., thermosetting resin) that will become the underfill portion 66 is supplied to the gap between the substrate member 70 and the frame member 72 while being discharged from, for example, a nozzle of a dispenser. Ru. The liquid resin material flows into the gap between the substrate member 70 and the frame member 72 due to capillary action, and diffuses to fill the gap between the plurality of solder balls 65. Thereafter, the underfill portion 66 is formed by hardening the resin material by baking or the like. By forming the underfill portion 66, a recess 25 is formed on each substrate portion 61A.

Thereafter, as shown in FIG. 13, similarly to the manufacturing method of the solid-state imaging device 1 according to the first embodiment, a die bonding step (S140) in which the image sensor 3 is provided on the substrate member 70, and the bonding pad 11 and the connection pad 15 are a wire bonding process (S150) to connect the images with the wire 4, a glass mounting process (S160) in which the glass 5 is provided on the image sensor 3 via the rib part 6, and a process of forming the sealing resin part 7 (S170). Each step is performed in order. As a result, as shown in FIG. 15A, a configuration in which the configuration of the solid-state imaging device 60 is two-dimensionally connected is obtained.

After a ball mounting process for forming solder balls on the back side of the substrate member 70 is performed, a singulation process is performed as shown in FIG. 13 (S180). In this step, dicing is performed in which the structure provided on the substrate member 70 and each substrate portion 61A is divided into individual pieces by device. Specifically, as shown in FIG. 15B, the sealing resin 37 portion, the frame member 72, and the substrate member 70 are separated by a dicing blade 79 so that the substrate member 70 is separated into individual substrate portions 61A. Fragmentation is performed.

Through the manufacturing process described above, a plurality of solid-state imaging devices 60 are obtained, as shown in FIG. 15C. Note that the method for manufacturing the solid-state imaging device 60 includes first manufacturing the substrate 2 composed of the main body substrate 61 and the frame 62 by dividing the structure in which the frame member 72 is provided on the substrate member 70 into pieces, and then A method may be used in which the substrate 2 is subjected to the steps S140 to S170 described above.

According to the solid-state imaging device 60 according to the present embodiment, by using a member having higher rigidity than the main body substrate 61 as the frame 62, the reinforcing effect of the substrate 2 by the protruding edge portion 23 can be effectively obtained. Thereby, warpage of the substrate 2 can be suppressed, and warpage of the pixel surface of the image sensor 3 and warpage of the entire package can be effectively reduced. Moreover, by using a member with higher heat dissipation properties as the frame 62 than the main body substrate 61, the heat dissipation properties around the wires 4 can be improved, and the heat dissipation properties of the solid-state imaging device 60 can be improved. Note that the frame 62 may be made of the same material as the main body substrate 61, for example, by using the same base material as the main body substrate 61.

<7. Configuration example of solid-state imaging device according to fourth embodiment>
A configuration example of a solid-state imaging device 80 according to a fourth embodiment of the present technology will be described with reference to FIGS. 16 and 17. The solid-state imaging device 80 according to the present embodiment differs from the solid-state imaging device 1 according to the first embodiment in the manner in which the portion forming the upper surface portion 22 of the substrate 2 is formed.

As shown in FIGS. 16 and 17, in the solid-state imaging device 80, the substrate 2 has multiple types of surface portions having different heights as the upper surface portion 22 on which the bonding pads 11 are positioned. Specifically, the substrate 2 includes, as the upper surface portion 22, a first upper surface portion 91 located at a first height position, and a second upper surface portion 91 located at a second height position lower than the first height position. It has an upper stage surface part 92. In the example shown in FIG. 17, the plurality of first upper surface portions 91 are located on a common virtual horizontal plane and have a common height. Similarly, the plurality of second upper surface portions 92 have a common height.

The first upper step surface part 91 and the second upper step surface part 92 are provided by forming a step part on the upper side of the peripheral wall part 21. The first upper surface portion 91 and the second upper surface portion 92 are both rectangular surface portions, and are alternately formed along the edge of the substrate 2. The first upper step surface part 91 and the second upper step surface part 92 are formed by making the upper part of each projecting edge part 23 of the peripheral wall part 21 of the substrate 2 into an uneven shape forming a step part.

In the peripheral wall portion 21 of the substrate 2, convex portions 93 whose upper surface portions are the first upper surface portions 91 are formed at predetermined intervals, including the four corners of the peripheral wall portion 21 in a plan view. A recess 94 is formed between adjacent protrusions 93 in the extending direction of the projecting edge 23 , that is, in the side direction of the substrate 2 , and the bottom surface of the recess 94 becomes the second upper surface portion 92 . In the illustrated example, each convex portion 93 is formed over the entire length of each projecting edge portion 23 in the width direction, and the recessed portion 94 opens both sides of the projecting edge portion 23 in the width direction.

The convex portion 93 has side surfaces 95, which are surfaces between the first upper surface portion 91 and the second upper surface portion 92, on both sides of the projecting edge portion 23 in the extending direction. The recessed portion 94 is formed by the upper surface portion 22 and side surfaces 95 facing each other. Note that the convex portions 93 formed at the four corners of the peripheral wall portion 21 connect a pair of side surfaces forming the inner corners of the convex portions 93 (center side of the image sensor 3) in a plan view to the side surfaces 95 of the adjacent convex portions 93. Together with this, a side surface 95 forms a recess 94.

In the configuration having the first upper surface section 91 and the second upper surface section 92 as the surface sections on which the bonding pads 11 are disposed, the wire 4 is an upper wire whose one end side is connected to the bonding pad 11 of the first upper surface section 91. 4A, and a lower wire 4B whose one end side is connected to the bonding pad 11 of the second upper surface portion 92. The other end of each wire 4 is connected to a connection pad 15 formed on the surface 3a of the image sensor 3, respectively.

In the example shown in FIGS. 16 and 17, the connection portion of the lower wire 4B to the bonding pad 11 is located on the image sensor 3 side (inside) with respect to the connection portion of the upper wire 4A to the bonding pad 11. Note that, in FIG. 17, among the plurality of wires 4 included in the solid-state imaging device 80 and their connecting portions, only one wire 4 each of the upper wire 4A and the lower wire 4B is illustrated.

According to the solid-state imaging device 80 according to the present embodiment, since the substrate 2 has the first upper surface portion 91 and the second upper surface portion 92, it is possible to arrange the connecting portions of the wires 4 to the substrate 2 side at different levels. Become. This makes it possible to suppress interference between adjacent wires 4, thereby increasing the density of the wires 4 in the space in which the plurality of wires 4 are arranged. As a result, it is possible to effectively downsize the package. Note that in the present embodiment, two types of surface portions, the first upper surface portion 91 and the second upper surface portion 92, are provided as the upper surface portions 22 having different heights, but the structure of the substrate 2 is such that three types of surface portions having different heights are provided. A configuration having a type of upper surface portion 22 may also be used.

<8. Configuration example of solid-state imaging device according to fifth embodiment>
A configuration example of a solid-state imaging device 100 according to a fifth embodiment of the present technology will be described with reference to FIGS. 18 to 21. Note that the side sectional view shown in FIG. 18 corresponds to the sectional view taken along the line EE in FIG. Further, the plan view shown in FIG. 20 partially shows a cutaway cross section. The solid-state imaging device 100 according to the present embodiment differs from the solid-state imaging device 1 according to the first embodiment in the structure of the portion forming the upper surface portion 22 of the substrate 2.

As shown in FIGS. 18 to 20, in the solid-state imaging device 100, a reinforcing member 110, which is a structure having higher rigidity than the substrate 2, is provided within the protrusion 23, which is a convex portion, of the substrate 2. There is. The reinforcing member 110 has a wiring section 120 for energizing the bonding pad 11 .

The reinforcing member 110 has a substantially square columnar outer shape and is provided along the edge of the substrate 2. As shown in FIG. 20, the substrate 2 according to this embodiment has a rectangular outer shape in plan view. For such a substrate 2, the reinforcing member 110 is provided to extend along the longitudinal direction of the substrate 2 in a plan view.

That is, the reinforcing member 110 is provided in the projecting edges 23A on both sides along the long side of the substrate 2 (on both left and right sides in FIG. 20) among the four projecting edges 23 of the substrate 2. 2 along the longitudinal direction. In the example shown in FIG. 20, each reinforcing member 110 is continuously provided as an integral member over substantially the entire longitudinal direction of the substrate 2. In the example shown in FIG. Further, in this embodiment, among the four projecting edges 23, the reinforcing member 110 is not provided in the projecting edges 23B on both sides along the short side of the substrate 2 (on both the upper and lower sides in FIG. 20). . However, the reinforcing member 110 may be provided within the projecting edge portion 23B.

The reinforcing member 110 has a reinforcing member main body part 130 that forms almost the entirety of the reinforcing member main body part 110, and a wiring part 120 is provided to the reinforcing member main body part 130. The reinforcing member main body portion 130 is constituted by a quadrangular prism-shaped member having a rectangular cross-sectional shape. The reinforcing member main body portion 130 has an upper surface 131, a lower surface 132, and left and right side surfaces 133.

The reinforcing member 110 uses the material of the reinforcing member main body portion 130 as a base material, and has higher rigidity than the substrate 2 as a whole because the reinforcing member main body portion 130 has higher rigidity than the substrate 2. Further, the base material of the reinforcing member 110 is preferably a material having a smaller coefficient of linear expansion than the base material of the substrate 2.

In this embodiment, the base material of the reinforcing member 110, that is, the material of the reinforcing member main body portion 130, is glass. In other words, the reinforcing member 110 is configured as a glass structure made of glass as a base material. According to the reinforcing member 110 made of glass as a base material, for example, when the substrate 2 is a general organic substrate whose base material is an organic material such as an epoxy resin, the reinforcing member 110 can have higher rigidity than the substrate 2, The coefficient of linear expansion can be made smaller than that of the base material of the substrate 2. However, the base material of the reinforcing member 110 is not limited to glass, and may be any material such as a resin material or ceramics that can provide higher rigidity in the reinforcing member 110 than the substrate 2 in relation to the base material of the substrate 2. Bye.

In the reinforcing member 110, the wiring portion 120 includes a through wiring portion 121 that forms a hole 122 that penetrates the reinforcing member main body portion 130 formed of the base material of the reinforcing member 110. The through wiring portion 121 is a wiring portion formed to cover the entire inner peripheral surface of a through hole 135 formed to penetrate the reinforcing member main body portion 130 in the vertical direction (thickness direction).

The through wiring portion 121 is a cylindrical wiring portion formed with a predetermined thickness (film thickness) on the inner peripheral surface of the through hole 135. Therefore, the hole 122 formed by the through wiring portion 121 has a shape corresponding to the shape of the through hole 135. The through hole 135 is a linear hole portion having a hole shape such as a circular shape or a rectangular shape when viewed from above. In the illustrated example, the through hole 135 has a circular hole shape.

The through wiring portion 121 is provided at a position corresponding to the arrangement of the plurality of bonding pads 11, and is located below each bonding pad 11. In this embodiment, the through wiring portions 121 are provided at predetermined intervals along the longitudinal direction of the reinforcing member main body portion 130, corresponding to the arrangement of the plurality of bonding pads 11.

The upper side of the through wiring portion 121 is continuous with the upper surface wiring portion 123 formed along the upper surface 131 of the reinforcing member main body portion 130. The through wiring section 121 is electrically connected to the bonding pad 11 via the upper surface wiring section 123. Although the upper surface wiring portion 123 is a circular portion with the through wiring portion 121 at the center when viewed from above (see FIG. 21), the shape of the upper surface wiring portion 123 is not particularly limited. The upper surface wiring portion 123 may be, for example, a rectangular portion.

The through wiring portion 121 has a lower side continuous with a lower surface wiring portion 124 formed along the lower surface 132 of the reinforcing member main body portion 130. The through wiring section 121 is electrically connected to the built-in pad 125 via the lower surface wiring section 124. The built-in pads 125 are electrically connected to a plurality of terminal electrodes formed on the back surface 2b of the substrate 2 via a predetermined wiring section formed in the substrate main body 20 of the substrate 2. The lower surface wiring section 124 is a circular portion like the upper surface wiring section 123, but its shape is not limited. The lower surface wiring portion 124 and the built-in pad 125 are formed, for example, as wiring portions that are vertically symmetrical with respect to the upper surface wiring portion 123 and the bonding pad 11, respectively.

The wiring portions and electrode portions provided to the reinforcing member main body portion 130, that is, the through wiring portion 121, the upper surface wiring portion 123, the bonding pad 11, the lower surface wiring portion 124, and the built-in pad 125 are plated with a predetermined metal material, for example. or sputtering. Examples of metal materials used for these wiring portions and electrode portions include silver (Ag), aluminum (Al), platinum (Pt), copper (Cu), and nickel (Ni).

According to the above configuration, within the protruding edge portion 23 of the substrate 2, the bonding pad 11, the wiring portion 120 including the upper surface wiring portion 123, the through wiring portion 121, and the lower surface wiring portion 124, and the built-in pad 125 , a wiring portion provided to the reinforcing member main body portion 130 and electrically connected to the wire 4 is configured. Note that the shape of the wiring portion provided to the reinforcing member main body portion 130, the forming manner of the forming portion, etc. are not particularly limited.

Further, the hole 122 of the reinforcing member 110 is provided with a resin portion 140 formed of a resin material that fills the inside of the hole 122. That is, in the reinforcing member 110, the inside of the hole 122 formed by the through-wiring portion 121 is completely filled with the resin portion 140. The resin portion 140 is a linear portion having a cross-sectional shape such as a circular shape or a rectangular shape depending on the shape of the through hole 135.

The resin part 140 is made of an insulating material. The resin material forming the resin part 140 is not particularly limited, but includes, for example, thermosetting resins such as acrylic resins, epoxy resins, and urethane resins, photosensitive resins such as UV curable resins, etc. It is.

Note that the configuration of the through wiring portion 121 may be such that the through hole 135 of the reinforcing member main body portion 130 is filled with the metal material forming the through wiring portion 121 instead of having the hole portion 122. good.

<9. Manufacturing method of solid-state imaging device according to fifth embodiment>
An example of a method for manufacturing the solid-state imaging device 100 according to the fifth embodiment of the present technology will be described with reference to FIGS. 22 and 23. Here, a method for manufacturing the substrate 2 having the reinforcing member 110 will be described.

First, as shown in FIG. 22A, a via opening step is performed to form a through hole 135, which is a via, in a square columnar glass plate 150 forming the reinforcing member main body portion 130. The through hole 135 is formed, for example, by etching using a chemical solution or processing using a laser.

Next, as shown in FIG. 22B, a step of forming a through wiring portion 121, an upper surface wiring portion 123, and a lower surface wiring portion 124 is performed on the glass plate 150 in which the through hole 135 has been formed. In this step, a metal material such as copper is used, and by plating the inner circumferential surface of the through hole 135 and the peripheral areas of the through hole 135 on the upper surface 131 and the lower surface 132 of the glass plate 150, the through wiring portion is formed. 121, an upper surface wiring section 123, and a lower surface wiring section 124 are formed. Note that other methods such as sputtering and printing may be used to form these wiring portions. Through the above steps, the reinforcing member 110 having the reinforcing member main body part 130 and the wiring part 120 is obtained.

Subsequently, a step of forming the resin portion 140 within the through wiring portion 121 is performed. The resin portion 140 is formed, for example, by the following method. As shown in FIG. 22C, a substrate 155 having a recess 156 into which the reinforcing member 110 is placed is prepared. The substrate 155 has a rectangular outer shape in plan view, and has recesses 156 along the long sides at both edges in the short direction. The recess 156 is a groove-shaped portion that opens the upper surface 155a side of the substrate 155 and has a shape and size corresponding to the outer shape of the reinforcing member 110. The recess 156 has a depth greater than the height (vertical dimension) of the reinforcing member 110. Further, the recess 156 has a width slightly larger than the width of the reinforcing member 110.

As shown in FIG. 22D, the reinforcing member 110 is inserted into the recess 156 of the substrate 155. By being inserted into the recess 156, the reinforcing member 110 brings the lower wiring part 124 into contact with the bottom surface 156a of the recess 156, positions the upper wiring part 123 below the upper surface 155a, and makes the upper part of the recess 156 a space. . As a result, the reinforcing member 110 is in a state where the upper side of the hole 122 is open facing the space above the recess 156.

Next, as shown in FIG. 23A, a resin forming the resin part 140 is poured into the reinforcing member 110 in the recess 156 from above, and the resin material is hardened by a process depending on the resin material, such as heating or UV irradiation. things are done. As a result, the hole 122 of the through wiring portion 121 is sealed with resin, and a resin portion 140 filling the hole 122 is formed. Note that the resin material 157 protruding from the hole 122 exists on the upper surface wiring portion 123 within the recess 156 .

Thereafter, as shown in FIG. 23B, after partially removing the substrate 155 and removing the resin material 157 on the upper wiring section 123, a step of forming the bonding pad 11 and the built-in pad 125 is performed.

Specifically, regarding the substrate 155, the center portion of the substrate 155 is shaped according to the chip size of the image sensor 3 so that a frame-shaped portion including the housing portion of the reinforcing member 110 and the peripheral edge of the substrate 155 remains. removed within the specified range. Further, regarding the substrate 155, in order to expose the lower wiring portion 124, a portion forming the bottom of the recess 156 is removed, and a via for forming the built-in pad 125 is formed. Further, in order to expose the upper surface wiring section 123, the resin material 157 on the upper surface wiring section 123 is removed. Partial removal of the substrate 155 and removal of the resin material 157 are performed by an appropriate method such as etching.

Thereafter, a step of forming bonding pads 11 and built-in pads 125 is performed for upper surface wiring section 123 and lower surface wiring section 124, respectively. These electrode pads are formed by plating, sputtering, or the like. Through the above steps, a rectangular frame-shaped frame substrate 160 is obtained in which reinforcing members 110 are built in at two locations in the frame-shaped substrate portion, and bonding pads 11 and built-in pads 125 are provided at a plurality of locations.

Next, as shown in FIG. 23C, a step of bonding the frame-shaped substrate 160 and the interposer substrate 165 is performed. The interposer substrate 165 is a member forming the substrate main body portion 20 on the substrate 2 to which the image sensor 3 is attached. In this step, the built-in pads 125 on the frame-shaped substrate 160 side are electrically connected to predetermined wiring portions within the interposer substrate 165. Note that for the interposer substrate 165, a collective substrate having a plurality of portions that will become the substrate main body portion 20 may be used. In this case, a configuration in which a plurality of frame-shaped substrates 160 are bonded to a collective substrate is separated into pieces in a predetermined process.

Through the above steps, as shown in FIG. 23D, the peripheral wall part 21 is made up of four projecting edges 23, the reinforcing member 110 is built into the projecting edges 23 on the long side, and the image sensor 3 A substrate 2 is obtained, which is a cavity substrate forming a recess 25 in which the . Thereafter, the same steps as steps S20 to S50 (see FIG. 5) in the method for manufacturing the solid-state imaging device 1 according to the first embodiment are performed on the substrate 2, thereby producing the solid-state imaging device according to the present embodiment. 100 is obtained. In addition to the method described above, in the method for manufacturing the board 2 according to the present embodiment, the reinforcing member 110 can be embedded by appropriately using a known manufacturing technology for a component-embedded board (a multilayer board in which electronic components etc. are embedded). A substrate 2 can be obtained.

According to the solid-state imaging device 100 according to the present embodiment, since the reinforcing member 110 is provided in the protruding edge portion 23 forming the upper surface portion 22, the rigidity of the substrate 2 can be improved, and the image sensor 3 and package deformation such as warpage can be suppressed.

Since the substrate 2 increases in volume by having the protruding edge portion 23, the substrate 2 is more likely to warp, and the image sensor 3 and the package are more likely to be warped. Warpage of the image sensor 3 or the package is undesirable in ensuring the functionality of the image sensor 3. Therefore, by providing a reinforcing member 110 having higher rigidity than the substrate 2 in the protrusion 23, the rigidity of the substrate 2 can be improved, and the warpage of the image sensor 3 and the package caused by the warpage of the substrate 2 can be prevented. Can be suppressed.

Furthermore, the base material of the reinforcing member 110 is made of a material having a smaller coefficient of linear expansion than the base material of the substrate 2. In this embodiment, glass forming the reinforcing member main body portion 130 is used as an example of the base material of the reinforcing member 110. According to such a configuration, in a configuration in which the reinforcing member 110 is provided in the protrusion 23, it is possible to suppress warpage of the substrate 2 due to thermal deformation, and effectively suppress warpage of the image sensor 3 and the package. can do.

As described above, according to the configuration in which the reinforcing member 110 is provided within the projecting edge portion 23, the physical properties such as the rigidity and coefficient of linear expansion of the reinforcing member 110 can be easily controlled by selecting the base material of the reinforcing member 110. becomes. As a result, the reinforcing member 110 for improving the rigidity of the substrate 2 can be provided depending on the shape of the substrate 2, the arrangement of the wires 4, etc., so that warping of the substrate 2 can be effectively suppressed. can.

Further, since the reinforcing member 110 has a wiring portion 120 for supplying electricity to the bonding pad 11, the bonding pad 11 is placed on a member provided within the protruding edge portion 23 in order to reduce warping of the image sensor 3, etc. can be provided. This makes it possible to realize a more compact configuration than a configuration in which components for reducing warpage of the image sensor 3 and the like are provided independently of the electrical signal path to the image sensor 3. In addition, the configuration in which the reinforcing member 110 is provided within the protruding edge portion 23 increases the rigidity of the substrate 2 without interfering with the sensor surface (light-receiving surface) of the image sensor 3 or inhibiting bonding of the wire 4. warping of the image sensor 3 and the package can be suppressed.

Regarding the wiring portion 120 of the reinforcing member 110, the reinforcing member 110 has a through wiring portion 121 in the wiring portion 120, and a resin portion 140 is provided in the hole 122 of the through wiring portion 121. According to such a configuration, the rigidity of the reinforcing member main body portion 130 can be improved compared to a configuration in which the inside of the hole portion 122 is hollow. Thereby, warpage of the substrate 2 can be effectively suppressed.

Further, the substrate 2 according to the present embodiment has a rectangular shape with one longitudinal direction in plan view (see FIG. 20), and the reinforcing member 110 extends along the protruding edges 23A of both long sides. It is set up in a shape. According to such a configuration, the reinforcing member 110 can increase the rigidity in the longitudinal direction where the substrate 2 is relatively prone to warpage, so that the warpage of the substrate 2 can be effectively suppressed.

<10. Modification example of solid-state imaging device according to fifth embodiment>
A modification of the solid-state imaging device 100 according to the fifth embodiment of the present technology will be described.

(First modification)
As shown in FIG. 24, in the configuration of the first modification, the substrate 2 includes, as the reinforcing member 110, a plurality of types of reinforcing members (110A, 110B) made of different base materials. That is, as shown in FIG. 24, in the first modification, as the plurality of types of reinforcing members 110, two types of first reinforcing members 110A and second reinforcing members 110B having different base materials are provided.

The base material of the first reinforcing member 110A is a material with higher rigidity than the base material of the second reinforcing member 110B, and the first reinforcing member 110A has higher rigidity than the second reinforcing member 110B. For example, when the base material of the second reinforcing member 110B is glass, a resin material having higher rigidity than glass is used as the base material of the first reinforcing member 110A.

As shown in FIG. 24, the first reinforcing member 110A, which has relatively high rigidity, is located on both sides along the long side of the board 2 (on both upper and lower sides in FIG. 24) among the four protruding edges 23 of the board 2. By being provided within the projecting edge portion 23A, it is provided along the longitudinal direction of the substrate 2. In addition, the second reinforcing member 110B, which has relatively low rigidity, is located inside the projecting edges 23B on both sides (on both left and right sides in FIG. 24) along the short side of the board 2 among the projecting edges 23 on the four sides of the board 2. By being provided in , it is provided along the lateral direction of the substrate 2 .

According to the configuration in which a plurality of types of reinforcing members 110 having different rigidities are built into each of the projecting edges 23, as in the configuration of the first modification, it is possible to impart anisotropy to the characteristics of the substrate 2. . This makes it possible to efficiently suppress warpage of the substrate 2 depending on the shape, internal structure, etc. of the substrate 2.

According to the configuration example shown in FIG. 24, since the reinforcing member 110 extending along the longitudinal direction of the substrate 2 is the first reinforcing member 110A having relatively high rigidity, the rigidity in the longitudinal direction where the substrate 2 is likely to warp is can be made higher than the rigidity in the lateral direction, so that warping of the substrate 2 as a whole can be effectively suppressed. Further, the width direction of the substrate 2 can also be suppressed by the rigidity improving effect of the second reinforcing member 110B.

Regarding the arrangement of the reinforcing members 110 on the substrate 2, reinforcing members 110 having a common base material, that is, having the same degree of rigidity, may be provided for the protruding edges 23 on the four sides of the substrate 2. Further, four types of reinforcing members 110 may be provided on each of the four sides of the substrate 2 using different base materials. According to such a configuration, by adjusting the rigidity and coefficient of linear expansion of the reinforcing member 110 depending on the placement location of the reinforcing member 110, it is possible to give the substrate 2 more complex anisotropy as a characteristic. Become. As a result, it is possible to suppress warpage of the substrate 2 with high precision in accordance with the characteristics of the substrate 2, and it is possible to efficiently suppress warpage of the substrate 2.

Further, the reinforcing member 110 may be provided within at least one of the four side projecting edges 23 of the substrate 2 . Further, as an example of a configuration in which the reinforcing member 110 is built in the projecting edge 23, the reinforcing member 110 is built into the projecting edge 23A on the long side of the board 2, and the projecting edge on the short side of the board 2 As for 23B, an example of a configuration is to make the width wider than the protrusion 23A and embed a capacitor such as MLCC for the purpose of noise removal.

(Second modification)
As shown in FIG. 25, in the configuration of the second modification, the reinforcing member 110 is provided in a manner that is divided into a plurality of parts at each of the projecting edges 23. As shown in FIG. In the example shown in FIG. 25, the reinforcing member 110 is provided on the protruding edge 23A along the long side of the substrate 2 in a manner divided into three by three dividing elements of reinforcing members 110C, 110D, and 110E. A reinforcing member 110 is provided on the protruding edge 23B along the short side of the substrate 2 in a manner of being divided into two by two dividing elements, reinforcing members 110F and 110G.

In this way, the reinforcing member 110 may be provided in a discontinuous manner in which a plurality of members (dividing elements) are arranged at predetermined intervals in the stretching direction at each of the protruding edges 23 of the substrate 2. In the second modification, the shapes, dimensions, and base materials of the plurality of reinforcing members 110 arranged on each of the projecting edges 23 are made different, so that the rigidity of the reinforcing members 110 can be adjusted depending on the location where the reinforcing members 110 are arranged. It is possible to adjust the coefficient of linear expansion and the coefficient of linear expansion, and it is possible to impart anisotropy to the characteristics of the substrate 2.

Regarding the convex portions forming the upper surface portion 22 of the substrate 2, the convex portions are provided intermittently at the peripheral edge of the substrate 2, that is, a plurality of convex portions are partially provided in the extending direction of each side of the substrate 2. A configuration may be provided. In such a configuration, the reinforcing member 110 is provided for all or a selected portion of the plurality of protrusions.

(Third modification)
The third modification is a modification of the wiring section 120 included in the reinforcing member 110. As shown in FIG. 26, the reinforcing member 110 in the configuration of the third modification has a side wiring part 127 instead of the through wiring part 121 in the wiring part 120 provided to the reinforcing member main body part 130.

The side wiring section 127 is a wiring section arranged along the side surface 133 of the reinforcing member main body section 130, and is provided at a position corresponding to the arrangement of the plurality of bonding pads 11. The side wiring part 127 has an upper side connected to the upper wiring part 123 and a lower side connected to the lower wiring part 124, thereby electrically connecting the upper wiring part 123 and the lower wiring part 124 to each other.

In the third modification, within the protruding edge portion 23 of the substrate 2, the bonding pad 11, the wiring portion 120 including the upper wiring portion 123, the side wiring portion 127, and the lower wiring portion 124, and the built-in pad 125, A wiring portion provided to the reinforcing member main body portion 130 and electrically connected to the wire 4 is configured. In the example shown in FIG. 26, the side wiring portion 127 is formed on the inner side surface 133 of the two side surfaces 133 of the reinforcing member main body portion 130, but the side wiring portion 127 is formed on the outer side surface 133. may be formed.

According to the configuration of the third modification, it is not necessary to drill holes in the glass forming the reinforcing member main body 130, and the process for forming the wiring part 120 on the reinforcing member main body 130 is simplified. becomes possible.

<11. Configuration example of electronic equipment>
An example of application of the semiconductor device according to the above-described embodiment to an electronic device will be described with reference to FIG. 27.

The semiconductor device (solid-state imaging device) according to the present technology can be applied as various devices that sense light such as visible light, infrared light, ultraviolet light, and X-rays. Solid-state imaging devices according to this technology include camera devices such as digital still cameras and video cameras, mobile terminal devices with an imaging function, copying machines that use solid-state imaging devices in the image reading section, the front, rear, surroundings, and inside of automobiles. The present invention is applicable to all kinds of electronic devices that use a solid-state image sensor in an image capturing section (photoelectric conversion section), such as a vehicle-mounted sensor that takes pictures of objects, a distance measuring sensor that measures distances between vehicles, etc. Further, the solid-state imaging device may be formed as a single chip, or may be a module having an imaging function in which an imaging section and a signal processing section or an optical system are packaged together. It may be.

As shown in FIG. 27, the camera device 200 as an electronic device includes an optical section 202, a solid-state imaging device 201, a DSP (Digital Signal Processor) circuit 203 which is a camera signal processing circuit, a frame memory 204, and a display section. 205, a recording section 206, an operation section 207, and a power supply section 208. The DSP circuit 203, frame memory 204, display section 205, recording section 206, operation section 207, and power supply section 208 are appropriately connected via a connection line 209 such as a bus line. The solid-state imaging device 201 is any of the solid-state imaging devices according to each of the embodiments described above.

The optical section 202 includes a plurality of lenses, takes in incident light (image light) from a subject, and forms an image on the imaging surface of the solid-state imaging device 201. The solid-state imaging device 201 converts the amount of incident light that is imaged onto the imaging surface by the optical section 202 into an electrical signal for each pixel, and outputs the electric signal as a pixel signal.

The display unit 205 is comprised of a panel display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays moving images or still images captured by the solid-state imaging device 201. The recording unit 206 records a moving image or a still image captured by the solid-state imaging device 201 on a recording medium such as a hard disk or a semiconductor memory.

The operation unit 207 issues operation commands regarding various functions of the camera device 200 under operation by the user. The power supply unit 208 appropriately supplies various power supplies that serve as operating power for the DSP circuit 203, frame memory 204, display unit 205, recording unit 206, and operation unit 207 to these supply targets.

According to the camera device 200 as described above, stress on the wire 4 that electrically connects the substrate 2 and the image sensor 3 to each other can be reduced in the solid-state imaging device 201, and the package can be made smaller. be able to. Being able to reduce the stress on the wire 4 leads to ensuring the performance of the solid-state imaging device 201 and, by extension, the performance of the camera device 200. Furthermore, being able to downsize the package of the solid-state imaging device 201 is beneficial from the perspective of downsizing the camera device 200.

The description of the embodiments described above is an example of the present technology, and the present technology is not limited to the embodiments described above. Therefore, it goes without saying that various changes can be made to the embodiments other than those described above, depending on the design, etc., as long as they do not deviate from the technical idea of the present disclosure. Furthermore, the effects described in the present disclosure are merely examples and are not limiting, and other effects may also be present. Further, the configurations of each embodiment and the configurations of each modification example described above can be combined as appropriate.

In the embodiment described above, the semiconductor element is the image sensor 3 which is a light receiving element, but the semiconductor element according to the present technology is not limited to this. The semiconductor device according to the present technology may be, for example, a light emitting device such as a VCSEL (Vertical Cavity Surface Emitting Laser), a laser diode, an LED (Light Emitting Diode), or the like. Further, the imaging device as a semiconductor device may have a configuration in which a single chip includes a plurality of semiconductor elements, or a configuration in which a plurality of semiconductor elements are provided as a plurality of chips.

Furthermore, in the embodiments described above, the transparent glass 5 is exemplified as the cover member according to the present technology, but the cover member according to the present technology is not limited to a transparent member, and can be semi-transparent or opaque. It may be a cover body.

Note that the present technology can have the following configuration.
(1)
A substrate and
a semiconductor element provided on the substrate;
a connecting member that electrically connects the substrate and the semiconductor element,
The substrate is
a first surface portion to which the semiconductor element is attached;
A semiconductor device, comprising: a second surface portion located above the first surface portion in the vertical direction and having an electrode portion connected to the connection member disposed thereon.
(2)
The semiconductor device according to (1), wherein the second surface portion is located at a height equal to or lower than the height of an element-side electrode portion provided on the upper surface of the semiconductor element and to which the connection member is connected.
(3)
a cover member that covers the semiconductor element from above;
a support part interposed between the semiconductor element and the cover member and supporting the cover member with respect to the semiconductor element,
The semiconductor device according to (1) or (2), wherein the support portion is provided to cover a connection portion of the connection member to the semiconductor element.
(4)
The substrate has a stepped surface portion formed between the first surface portion and the second surface portion,
(1) to (3) above, wherein the stepped surface portion has an inclined surface that is inclined in a direction that gradually widens the distance between the step surface portion and the semiconductor element from the first surface portion side to the second surface portion side in the vertical direction. The semiconductor device according to any one of the above.
(5)
The semiconductor device according to any one of (1) to (4), wherein the second surface portion is formed of a member different from the member forming the first surface portion.
(6)
The semiconductor device according to any one of (1) to (5), wherein the substrate has a plurality of types of surface portions having different heights as the second surface portion.
(7)
comprising a sealing resin part provided around the semiconductor element and the cover member on the substrate,
The semiconductor device according to any one of (1) to (6), wherein the cover member has at least a portion of the upper side of the side surface as an exposed surface portion that is not covered with the sealing resin portion.
(8)
The substrate has a convex portion protruding from the first surface as a portion forming the second surface,
The semiconductor according to any one of (1) to (7) above, wherein a reinforcing member having a wiring portion for supplying electricity to the electrode portion and having higher rigidity than the substrate is provided in the convex portion. Device.
(9)
The semiconductor device according to (8), wherein the base material of the reinforcing member is a material having a smaller coefficient of linear expansion than the base material of the substrate.
(10)
The wiring portion includes a through wiring portion that is a hole that penetrates a main body portion formed by a base material of the reinforcing member,
The semiconductor device according to (8) or (9), wherein the hole is provided with a resin part formed of a resin material that fills the inside of the hole.
(11)
The substrate has a rectangular outer shape in plan view,
The semiconductor device according to any one of (8) to (10), wherein the reinforcing member is provided to extend along the longitudinal direction of the substrate in a plan view.
(12)
The semiconductor device according to any one of (8) to (11), wherein the substrate has a plurality of types of reinforcing members formed of different base materials as the reinforcing members.
(13)
A substrate and
a semiconductor element provided on the substrate;
a connecting member that electrically connects the substrate and the semiconductor element,
The substrate is
a first surface portion to which the semiconductor element is attached;
An electronic device comprising: a second surface portion located above the first surface portion in the vertical direction, and having an electrode portion connected to the connection member disposed thereon;

1 Solid-state imaging device (semiconductor device)
2 Substrate 2a Surface (first surface part)
3 Image sensor (semiconductor element)
3a Surface (upper surface)
4 Wire (connection member)
5 Glass (cover member)
5e Exposed surface portion 6 Rib portion (support portion)
7 Sealing resin part 9 Die bonding material 11 Bonding pad (electrode part)
15 Connection pad (element side electrode part)
22 Upper surface section (second surface section)
23 Projection (protrusion)
25 Recess 26 Inner surface (stepped surface)
50 Solid-state imaging device (semiconductor device)
60 Solid-state imaging device (semiconductor device)
62 Frame 80 Solid-state imaging device (semiconductor device)
91 First upper surface portion 92 Second upper surface portion 100 Solid-state imaging device (semiconductor device)
110 Reinforcing member 110A First reinforcing member 110B Second reinforcing member 120 Wiring portion 121 Penetrating wiring portion 122 Hole portion 130 Reinforcing member main body portion (main body portion)
140 Resin part 200 Camera device (electronic equipment)
201 Solid-state imaging device (semiconductor device)

Claims

A substrate and
a semiconductor element provided on the substrate;
a connecting member that electrically connects the substrate and the semiconductor element,
The substrate is
a first surface portion to which the semiconductor element is attached;
A semiconductor device, comprising: a second surface portion located above the first surface portion in the vertical direction and having an electrode portion connected to the connection member disposed thereon.
The semiconductor device according to claim 1, wherein the second surface portion is located at a height lower than the height of an element-side electrode portion provided on the upper surface of the semiconductor element and connected to the connection member.
a cover member that covers the semiconductor element from above;
a support part interposed between the semiconductor element and the cover member and supporting the cover member with respect to the semiconductor element,
The semiconductor device according to claim 1, wherein the support portion is provided to cover a connection portion of the connection member to the semiconductor element.
The substrate has a stepped surface portion formed between the first surface portion and the second surface portion,
2. The semiconductor device according to claim 1, wherein the stepped surface section is an inclined surface that is inclined in a direction that gradually widens the distance between the step surface section and the semiconductor element from the first surface section side to the second surface section side in the vertical direction. .
The semiconductor device according to claim 1, wherein the second surface portion is formed of a member different from a member forming the first surface portion.
The semiconductor device according to claim 1, wherein the substrate has a plurality of types of surface portions having different heights as the second surface portion.
comprising a sealing resin part provided around the semiconductor element and the cover member on the substrate,
The semiconductor device according to claim 1, wherein the cover member has at least a portion of an upper side of a side surface as an exposed surface portion that is not covered with the sealing resin portion.
The substrate has a convex portion protruding from the first surface as a portion forming the second surface,
2. The semiconductor device according to claim 1, wherein a reinforcing member is provided in the convex portion, the reinforcing member having a wiring portion for energizing the electrode portion and having higher rigidity than the substrate.
The semiconductor device according to claim 8, wherein the base material of the reinforcing member is a material having a smaller linear expansion coefficient than the base material of the substrate.
The wiring portion includes a through wiring portion that is a hole that penetrates a main body portion formed by a base material of the reinforcing member,
9. The semiconductor device according to claim 8, wherein the hole is provided with a resin part made of a resin material that fills the inside of the hole.
The substrate has a rectangular outer shape in plan view,
9. The semiconductor device according to claim 8, wherein the reinforcing member is provided to extend along the longitudinal direction of the substrate in a plan view.
The semiconductor device according to claim 8, wherein the substrate includes a plurality of types of reinforcing members formed of different base materials as the reinforcing members.
A substrate and
a semiconductor element provided on the substrate;
a connecting member that electrically connects the substrate and the semiconductor element,
The substrate is
a first surface portion to which the semiconductor element is attached;
An electronic device comprising: a second surface portion located above the first surface portion in the vertical direction and having an electrode portion connected to the connection member disposed thereon;