JPWO2020075002A1 - 撮像装置、及び認証装置 - Google Patents
撮像装置、及び認証装置 Download PDFInfo
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- JPWO2020075002A1 JPWO2020075002A1 JP2020550953A JP2020550953A JPWO2020075002A1 JP WO2020075002 A1 JPWO2020075002 A1 JP WO2020075002A1 JP 2020550953 A JP2020550953 A JP 2020550953A JP 2020550953 A JP2020550953 A JP 2020550953A JP WO2020075002 A1 JPWO2020075002 A1 JP WO2020075002A1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図2A、図2Bは、撮像装置を説明する図である。図2Cは、静脈画像の一例である。
図3A、図3B、図3Cは、画素アレイを説明する図である。
図4A、図4B、図4Cは、画素回路を説明する図である。
図5A、図5B、図5Cは、画素回路を説明する図である。
図6A、図6B、図6Cは、画素回路を説明する図である。
図7A、図7B、図7Cは、画素回路を説明する図である。
図8Aは、ローリングシャッタ方式を説明する図である。図8Bは、グローバルシャッタ方式を説明する図である。
図9A、図9Bは、画素回路の動作を説明するタイミングチャートである。
図10A、図10Bは、画素回路を説明する図である。
図11Aは、認証装置を説明するブロック図である。図11Bは、認証装置を説明する斜視図である。
図12は、認証装置の動作を説明するフローチャートである。
図13A、図13Bは、ドアの一例を示す図である。図13C、図13D、図13Eは、認証装置の一例を示す斜視図である。
図14A1、図14B1は、ドアノブの一例を示す図である。図14A2、図14B2、図14Cは、認証装置の一例を示す斜視図である。
図15A、図15B、図15Cは、認証装置の一例を示す断面図である。
図16A、図16B、図16Cは、認証装置の一例を示す断面図である。
図17は、認証装置の一例を示す断面図である。
図18は、認証装置の一例を示す断面図である。
図19A、図19Bは、認証装置の一例を示す断面図である。
本実施の形態では、本発明の一態様である撮像装置について、図1乃至図10を用いて説明する。
本実施の形態では、本発明の一態様の認証装置について、図11乃至図14を用いて説明する。
本実施の形態では、本発明の一態様の認証装置について、図15乃至図19を用いて説明する。
図15Aに、認証装置80Aの断面図を示す。
図15Bに認証装置80Bの断面図を示す。なお、以降の認証装置の説明において、先に説明した認証装置と同様の構成については、説明を省略することがある。
図15Cに認証装置80Cの断面図を示す。
図16Aに認証装置80Dの断面図を示し、図16Bに認証装置80Eの断面図を示し、図16Cに認証装置80Fの断面図を示す。
図17に、認証装置100Aの断面図を示す。
図18に、認証装置100Bの断面図を示す。
図19Aに、認証装置100Cの断面図を示す。
以下では、半導体層に適用可能な金属酸化物について説明する。
Claims (5)
- 基板と、画素アレイと、接着層と、を有し、
前記基板は、可撓性を有し、
前記画素アレイは、前記基板の第1の面上に位置し、
前記接着層は、前記基板の前記第1の面と対向する第2の面上に位置し、
前記画素アレイは、受光素子及び発光素子を有し、
前記受光素子は、赤外光を検知する機能を有し、
前記受光素子は、第1の画素電極、活性層、及び共通電極を有し、
前記発光素子は、赤外光を射出する機能を有し、
前記発光素子は、第2の画素電極、発光層、及び前記共通電極を有し、
前記活性層は、前記第1の画素電極上に位置し、
前記活性層は、第1の有機化合物を有し、
前記発光層は、前記第2の画素電極上に位置し、
前記発光層は、前記第1の有機化合物とは異なる第2の有機化合物を有し、
前記共通電極は、前記活性層を介して前記第1の画素電極と重なる部分と、前記発光層を介して前記第2の画素電極と重なる部分と、を有する撮像装置。 - 基板と、画素アレイと、接着層と、を有し、
前記基板は、可撓性を有し、
前記画素アレイは、前記基板の第1の面上に位置し、
前記接着層は、前記基板の前記第1の面と対向する第2の面上に位置し、
前記画素アレイは、受光素子及び発光素子を有し、
前記受光素子は、赤外光を検知する機能を有し、
前記受光素子は、第1の画素電極、共通層、活性層、及び共通電極を有し、
前記発光素子は、赤外光を射出する機能を有し、
前記発光素子は、第2の画素電極、前記共通層、発光層、及び前記共通電極を有し、
前記活性層は、前記第1の画素電極上に位置し、
前記活性層は、第1の有機化合物を有し、
前記発光層は、前記第2の画素電極上に位置し、
前記発光層は、前記第1の有機化合物とは異なる第2の有機化合物を有し、
前記共通層は、前記第1の画素電極上及び前記第2の画素電極上に位置し、
前記共通層は、前記活性層と重なる部分と、前記発光層と重なる部分と、を有し、
前記共通電極は、前記共通層及び前記活性層を介して前記第1の画素電極と重なる部分と、前記共通層及び前記発光層を介して前記第2の画素電極と重なる部分と、を有する撮像装置。 - 請求項1又は請求項2において、
前記画素アレイは、チャネル形成領域に金属酸化物を有するトランジスタ、またはチャネル形成領域にシリコンを有するトランジスタの少なくともいずれか一方を有する撮像装置。 - 請求項1乃至請求項3のいずれか一に記載の撮像装置と、
制御部と、記憶部と、入出力部と、を有し、
前記制御部、前記記憶部、前記入出力部は、前記第1の面上に位置し、
前記撮像装置は、画像を撮像する機能を有し、
前記記憶部は、登録画像を格納する機能を有し、
前記制御部は、前記画像と前記登録画像を照合する機能を有し、
前記入出力部は、アンテナを有し、
前記入出力部は、前記照合の結果を外部に出力する機能を有し、
前記入出力部は、無線により電力を供給される機能を有する認証装置。 - 請求項4において、
さらに外部駆動回路を有し、
前記外部駆動回路は、前記基板と接せず、
前記入出力部は、前記外部駆動回路に前記照合の結果を出力する機能を有する認証装置。
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