JPWO2020074412A5 - - Google Patents

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Publication number
JPWO2020074412A5
JPWO2020074412A5 JP2021519171A JP2021519171A JPWO2020074412A5 JP WO2020074412 A5 JPWO2020074412 A5 JP WO2020074412A5 JP 2021519171 A JP2021519171 A JP 2021519171A JP 2021519171 A JP2021519171 A JP 2021519171A JP WO2020074412 A5 JPWO2020074412 A5 JP WO2020074412A5
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JP
Japan
Prior art keywords
target
bias
measurements
asymmetry
patterning device
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JP2021519171A
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English (en)
Japanese (ja)
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JP2022504488A (ja
JP7179979B2 (ja
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Priority claimed from PCT/EP2019/077016 external-priority patent/WO2020074412A1/en
Publication of JP2022504488A publication Critical patent/JP2022504488A/ja
Publication of JPWO2020074412A5 publication Critical patent/JPWO2020074412A5/ja
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JP2021519171A 2018-10-08 2019-10-07 メトトロジ方法、パターニングデバイス、装置及びコンピュータプログラム Active JP7179979B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18199182.9 2018-10-08
EP18199182 2018-10-08
PCT/EP2019/077016 WO2020074412A1 (en) 2018-10-08 2019-10-07 Metrology method, patterning device, apparatus and computer program

Publications (3)

Publication Number Publication Date
JP2022504488A JP2022504488A (ja) 2022-01-13
JPWO2020074412A5 true JPWO2020074412A5 (fi) 2022-07-19
JP7179979B2 JP7179979B2 (ja) 2022-11-29

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JP2021519171A Active JP7179979B2 (ja) 2018-10-08 2019-10-07 メトトロジ方法、パターニングデバイス、装置及びコンピュータプログラム

Country Status (7)

Country Link
US (2) US10996570B2 (fi)
JP (1) JP7179979B2 (fi)
KR (1) KR102616712B1 (fi)
CN (1) CN113196172A (fi)
IL (1) IL282017A (fi)
TW (1) TWI711894B (fi)
WO (1) WO2020074412A1 (fi)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102616712B1 (ko) 2018-10-08 2023-12-20 에이에스엠엘 네델란즈 비.브이. 계측 방법, 패터닝 디바이스, 장치 및 컴퓨터 프로그램
TWI734284B (zh) * 2018-12-04 2021-07-21 荷蘭商Ａｓｍｌ荷蘭公司 用於判定微影製程之效能參數之目標
WO2021168724A1 (en) * 2020-02-27 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Method of phase contrast imaging
WO2021224009A1 (en) * 2020-05-07 2021-11-11 Asml Netherlands B.V. A substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
CN113655695B (zh) * 2021-09-02 2023-11-07 西华大学 一种基于介质微球超分辨成像的复合光刻对准系统及方法
WO2024104854A1 (en) 2022-11-14 2024-05-23 Asml Netherlands B.V. Simulating an electromagnetic response of a semiconductor structure for diffraction based optical metrology

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WO2010025793A1 (en) * 2008-09-08 2010-03-11 Asml Netherlands B.V. A substrate, a method of measuring a property, an inspection apparatus and a lithographic apparatus
NL2004094A (en) 2009-02-11 2010-08-12 Asml Netherlands Bv Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method.
KR101461457B1 (ko) 2009-07-31 2014-11-13 에이에스엠엘 네델란즈 비.브이. 계측 방법 및 장치, 리소그래피 시스템, 및 리소그래피 처리 셀
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
WO2012062501A1 (en) 2010-11-12 2012-05-18 Asml Netherlands B.V. Metrology method and apparatus, and device manufacturing method
KR101761735B1 (ko) * 2012-03-27 2017-07-26 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
WO2015062854A1 (en) * 2013-10-30 2015-05-07 Asml Netherlands B.V. Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method
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JP6421237B2 (ja) * 2014-08-29 2018-11-07 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジー方法、ターゲット、及び基板
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JP6716779B2 (ja) 2016-07-21 2020-07-01 エーエスエムエル ネザーランズ ビー．ブイ． ターゲットの測定方法、基板、計測装置およびリソグラフィ装置
KR102259091B1 (ko) * 2016-11-10 2021-06-01 에이에스엠엘 네델란즈 비.브이. 스택 차이를 이용한 설계 및 교정
CN110612481A (zh) 2017-05-08 2019-12-24 Asml荷兰有限公司 测量结构的方法、检查设备、光刻系统和器件制造方法
US10473460B2 (en) * 2017-12-11 2019-11-12 Kla-Tencor Corporation Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals
KR102616712B1 (ko) 2018-10-08 2023-12-20 에이에스엠엘 네델란즈 비.브이. 계측 방법, 패터닝 디바이스, 장치 및 컴퓨터 프로그램

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