JPWO2019181403A1 - Manufacturing method of adhesive tape and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive tape capable of stably holding a chip or the like even when dry polishing is performed following a so-called pre-dicing method. SOLUTION: In a step of grinding a back surface of a semiconductor wafer having grooves formed on the surface of the semiconductor wafer, separating the semiconductor wafer into semiconductor chips by the grinding, and then performing dry polishing, the semiconductor wafer is attached to the surface of the semiconductor wafer. A pressure-sensitive adhesive tape that includes a base material and a pressure-sensitive adhesive layer provided on one side thereof, and has a tensile storage elasticity of the base material at 60 ° C. of 250 MPa or more. [Selection diagram] None

Description

The present invention relates to an adhesive tape, and more specifically, it is used to temporarily fix a semiconductor wafer or chip when the semiconductor wafer is made into a chip by a so-called pre-dicing method and further dry-polished to manufacture a semiconductor device. The present invention relates to an adhesive tape and a method for manufacturing a semiconductor device using the adhesive tape.

As various electronic devices are becoming smaller and more multifunctional, the semiconductor chips mounted on them are also required to be smaller and thinner. In order to reduce the thickness of the chip, it is common to grind the back surface of the semiconductor wafer to adjust the thickness. Further, after forming a groove having a predetermined depth from the front surface side of the wafer, grinding is performed from the back surface side of the wafer, the bottom of the groove is removed by grinding to individualize the wafer, and a method called a pre-dicing method for obtaining chips is performed. It may be used. In the pre-dicing method, the back surface of the wafer can be ground and the wafer can be separated into individual pieces at the same time, so that a thin chip can be efficiently manufactured.

Conventionally, when the back surface of a semiconductor wafer is ground or when a chip is manufactured by a pre-dicing method, a back grind sheet is called on the wafer surface in order to protect the circuit on the wafer surface and fix the semiconductor wafer and the semiconductor chip. It is common to attach an adhesive tape.

Examples of the back grind sheet used in the pre-dicing method include an adhesive tape provided with a base material and an adhesive layer provided on one surface of the base material. As an example of such an adhesive tape, Japanese Patent Application Laid-Open No. 2015-185691 (Patent Document 1) proposes an adhesive tape for processing a semiconductor wafer in which a radiation-curable pressure-sensitive adhesive layer is provided on a base film. Patent Document 1 discloses a base film in which at least two different materials selected from polyethylene terephthalate, polypropylene and an ethylene-vinyl acetate copolymer are laminated as a base film, and as a preferable specific example, polyethylene is used. A base film composed of three layers of / polyethylene terephthalate / polyethylene is disclosed.

When the wafer is fragmented by the pre-dicing method as described above, the back surface is ground while supplying water to the ground surface in order to remove heat and grinding debris generated during back surface grinding. However, it has been found that in such conventional back surface grinding, grinding marks remain on the back surface of the insert, which causes a decrease in the bending strength of the insert. In particular, as a result of thinning and miniaturization of the chip, the chip is easily damaged, and therefore, a decrease in the bending strength of the chip is regarded as a problem.

Japanese Unexamined Patent Publication No. 2015-185691

In order to remove the above-mentioned grinding marks (hereinafter sometimes referred to as "damaged parts"), after grinding the back surface with water, the damaged parts are finally removed by dry polishing without using water, and the chips are chipped. It is being studied to improve the bending strength of the material. Dry polishing refers to a process of polishing with a polishing puff without using a slurry containing water or abrasive grains.

However, unlike the backside grinding process, water is not used during dry polishing, so the heat generated during polishing is not removed by water, and the chips become hot. The heat of the chip propagates to the adhesive tape to which the chip is attached. As a result, the temperature of the adhesive tape may reach 60 ° C. or higher during dry polishing.

Since the base material of the adhesive tape is formed of a resin component, it is easily deformed by heat. When the base material of the adhesive tape is deformed by heat during dry polishing, the adhesive tape is not sufficiently fixed at the edges, the chips on the adhesive tape cannot be sufficiently held, and the chips are peeled off and scattered. Resulting in. Such scattering of chips not only lowers the yield, but also causes the scattered chips to come into contact with other chips to damage the other chips or damage the grinding apparatus, resulting in poor transfer to the next process. It causes.

The present invention has been made in view of such an actual situation, and an object of the present invention is to provide an adhesive tape that can stably hold chips and the like even when dry polishing is performed following the so-called pre-dicing method.

Aspects of the present invention are
[1] The back surface of a semiconductor wafer having grooves formed on the surface of the semiconductor wafer is ground, and the semiconductor wafer is separated into semiconductor chips by the grinding, and then affixed to the surface of the semiconductor wafer in a step of performing dry polishing. Adhesive tape used for
Includes a substrate and an adhesive layer provided on one side thereof,
An adhesive tape having a tensile storage elastic modulus of a base material at 60 ° C. of 250 MPa or more.

[2] A step of forming a groove from the surface side of the semiconductor wafer and
A step of attaching an adhesive tape containing a base material and an adhesive layer provided on one side thereof and having a tensile storage elastic modulus of the base material at 60 ° C. of 250 MPa or more to the surface of a semiconductor wafer.
A process in which a semiconductor wafer having an adhesive tape attached to the front surface and a groove formed thereof is ground from the back surface side, the bottom of the groove is removed, and the wafer is separated into a plurality of chips.
The process of performing dry polishing after fragmenting a semiconductor wafer into semiconductor chips,
The process of peeling the chip from the adhesive tape and
It is a manufacturing method of a semiconductor device provided with.

The adhesive tape according to the present invention can stably hold a semiconductor chip even when the temperature of the adhesive tape rises due to heat during dry polishing. Therefore, the semiconductor chip can be manufactured with a high yield even if the pre-dicing method including the dry polishing step is performed.

Hereinafter, the adhesive tape according to the present invention will be specifically described. First, the main terms used in the present specification will be described.

In the present specification, for example, "(meth) acrylate" is used as a term indicating both "acrylate" and "methacrylate", and the same applies to other similar terms.

The adhesive tape means a laminate including a base material and an adhesive layer provided on one side thereof, and does not prevent the inclusion of other constituent layers other than these. For example, a primer layer may be formed on the surface of the base material on the pressure-sensitive adhesive layer side for the purpose of improving the adhesion at the interface between the surface of the base material and the pressure-sensitive adhesive layer and preventing the migration of low molecular weight components. Further, a release sheet for protecting the pressure-sensitive adhesive layer may be laminated on the surface of the pressure-sensitive adhesive layer until use. Further, the base material may be a single layer or may be a multilayer having a functional layer such as a buffer layer. The same applies to the pressure-sensitive adhesive layer.

The "front surface" of the semiconductor wafer refers to the surface on which the circuit is formed, and the "back surface" refers to the surface on which the circuit is not formed. Fragmentation of a semiconductor wafer means dividing a semiconductor wafer into circuits to obtain a semiconductor chip.

Dry polishing means a process of polishing with a polishing puff without using a slurry containing water or abrasive grains. In addition, in this specification, it may be described as "dry polishing process".

Various general-purpose polishing puffs are used as the polishing puffs used for dry polishing, and Disco's polishing wheels "Gettering DP" and "DP08 SERIES" are used as commercially available products, but the polishing puffs are not limited thereto. By performing dry polishing, the damaged part of the chip, that is, the grinding mark is removed.

The pre-dicing method is a method in which a groove having a predetermined depth is formed from the front surface side of the wafer, then grinding is performed from the back surface side of the wafer, and the wafer is separated by grinding.

The back grind tape is an adhesive tape used to protect the wafer circuit surface when grinding the back surface of a semiconductor wafer, and particularly, in this specification, refers to an adhesive tape preferably used in a pre-dicing method.

(1. Adhesive tape)
The adhesive tape according to the present invention is used as the back grind tape in the dry polishing step. The pressure-sensitive adhesive tape according to the present invention includes a base material and a pressure-sensitive adhesive layer provided on one side thereof. Hereinafter, the components of the adhesive tape will be described in detail.

(1.1. Base material)
As the base material of the adhesive tape according to the present embodiment, various resin films used as the base material of the back grind tape are used.

Examples of the base materials used in the present invention will be described in detail below, but these are merely descriptions for facilitating the availability of the base materials and should not be construed in any limited way.

(1.2. Physical characteristics of the base material)
In the present embodiment, the tensile storage modulus of the base material at ₆₀ ℃ (E '60) is not less than 250 MPa. The tensile storage elastic modulus (E') is one of the indexes of the easiness of deformation (hardness) of the base material. By tensile storage modulus of the base material (E _'60) is within the above range at 60 ° C., due to the thermal deformation of the substrate, to prevent the chip peeling from the adhesive tape, processing steps, in particular dry polishing Deformation of the base material due to the stress of time can be prevented. In addition, the cushioning performance against stress during backside grinding and dry polishing is appropriately maintained.

Furthermore, the semiconductor wafer was adhered to the adhesive tape is being placed on the suction table via the adhesive tape at the time of grinding the back surface or when dry polishing, to tensile storage modulus of the base material (E _'60) in the above range As a result, the adhesion between the adhesive tape and the suction table is improved, and vibration during backside polishing or dry polishing can be suppressed. Further, the adhesive tape can be easily peeled off from the suction table after backside grinding or dry polishing.

E _'60 is preferably at least 270 MPa, and more preferably at least 300 MPa. Meanwhile, E _'60 is preferably not more than 4000 MPa, more preferably at most 1100 MPa.

Therefore, in the present embodiment, by controlling the tensile storage elastic modulus of the base material at 60 ° C. within the above range, the chips can be effectively scattered even when the pressure-sensitive adhesive layer is heated during dry polishing. Can be suppressed.

The tensile storage elastic modulus of the base material may be measured by a known method in the same manner as the loss tangent and shear storage elastic modulus of the pressure-sensitive adhesive layer. For example, a material made of the same material as the sheet or film constituting the base material is used as a sample of a predetermined size, and the sample is strained at a predetermined frequency in a predetermined temperature range by a dynamic viscoelasticity measuring device. , The elastic modulus can be measured, and the tensile storage elastic modulus can be calculated from the measured elastic modulus.

The tensile storage elastic modulus E'of the base material can be controlled by appropriately selecting the film constituting the base material from the viewpoints of material, physical properties, thickness and the like. For example, the tensile storage elastic modulus can be controlled within a predetermined range by selecting a film having a relatively high Tg as the constituent film or by performing an annealing treatment at the time of forming the base film.

(1.3. Specific example of base material)
Specific examples of the base material will be described below, but these are merely descriptions for facilitating the acquisition of the base material and should not be interpreted in any limited manner.

The base material of the present invention may be, for example, a relatively hard resin film. Further, the base material of the present invention may be a laminate in which a buffer layer made of a relatively soft resin film is laminated on one side or both sides of a relatively hard resin film.

The thickness of the base material is not particularly limited, but is preferably 500 μm or less, more preferably 15 to 350 μm, and even more preferably 20 to 160 μm. By setting the thickness of the base material to 500 μm or less, it becomes easy to control the peeling force of the adhesive tape. Further, when the thickness is 15 μm or more, the base material easily functions as a support for the adhesive tape.

As the material of the base material, various resin films can be used. Here, as a base material having a tensile storage elastic coefficient of 250 MPa or more, for example, polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and total aromatic polyester, polyamide, polycarbonate, polyacetal, modified polyphenylene oxide, polyphenylene sulfide, and polysulfone, Examples thereof include resin films such as polyether ketone and biaxially stretched polypropylene.

Among these resin films, a film containing at least one selected from a polyester film, a polyamide film, and a biaxially stretched polypropylene film is preferable, a polyester film is more preferable, and a polyethylene terephthalate film is further preferable.

Further, the base material may contain a plasticizer, a lubricant, an infrared absorber, an ultraviolet absorber, a filler, a colorant, an antistatic agent, an antioxidant, a catalyst and the like as long as the effects of the present invention are not impaired. .. In addition, the base material has transparency to the energy rays emitted when the pressure-sensitive adhesive layer is cured.

Further, the surface of at least one of the base materials may be subjected to an adhesive treatment such as a corona treatment in order to improve the adhesion with at least one of the buffer layer and the pressure-sensitive adhesive layer. Further, the base material may have the above-mentioned resin film and an easy-adhesion layer (primer layer) coated on at least one surface of the resin film.

The composition for forming the easy-adhesive layer for forming the easy-adhesive layer is not particularly limited, and examples thereof include compositions containing a polyester resin, a urethane resin, a polyester urethane resin, an acrylic resin, and the like. The composition for forming an easy-adhesive layer may contain a cross-linking agent, a photopolymerization initiator, an antioxidant, a softening agent (plasticizer), a filler, a rust preventive, a pigment, a dye, etc., if necessary. Good.

The thickness of the easy-adhesion layer is preferably 0.01 to 10 μm, more preferably 0.03 to 5 μm. The thickness of the easy-adhesion layer is small with respect to the thickness of the base material, and since the easy-adhesion layer is a soft material, the effect on the tensile storage elastic modulus is small, and the tensile storage elastic modulus of the base material is easy. Even if it has an adhesive layer, it is substantially the same as the tensile storage elastic modulus of the resin film.

(1.4. Buffer layer)
A buffer layer may be provided on one side or both sides of the base material. The cushioning layer is made of a relatively soft resin film, which alleviates vibration caused by grinding the semiconductor wafer and prevents the semiconductor wafer from cracking and chipping. Further, the semiconductor wafer to which the adhesive tape is attached is arranged on the suction table at the time of backside grinding, but by providing the buffer layer, the adhesive tape can be easily held on the suction table appropriately.

The thickness of the buffer layer is preferably 8 to 80 μm, more preferably 10 to 60 μm.

The buffer layer is a polypropylene film, an ethylene-vinyl acetate copolymer film, an ionomer resin film, an ethylene / (meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, an LDPE film, or an LLDPE film. Is preferable. Further, it may be a layer formed from a composition for forming a buffer layer containing an energy ray-polymerizable compound. The base material having a buffer layer is obtained by laminating the base material and the buffer layer.

(1.5. Adhesive layer)
An example of the pressure-sensitive adhesive layer used in the present invention will be described in detail below in the order of physical properties and composition, but these are merely descriptions for facilitating the production or acquisition of the pressure-sensitive adhesive layer, and are interpreted in a limited manner. Should not be.

(1.6. Physical characteristics of the adhesive layer)
The pressure-sensitive adhesive layer is not particularly limited as long as it is configured so as to exhibit the performance of the pressure-sensitive adhesive tape. In the present embodiment, as described above, the temperature of the adhesive tape may reach 60 ° C. or higher during dry polishing.

Therefore, in this embodiment, it is preferable that the loss tangent of the pressure-sensitive adhesive layer in ₆₀ ℃ (tanδ 60) is 0.40 or less, the shear storage modulus of the pressure-sensitive adhesive layer at ₆₀ ℃ (G '60) is 3. It is preferably 0 × 10 ⁴ Pa or more.

The loss tangent (tan δ) is defined by “loss elastic modulus / storage elastic modulus” and is a value measured by the response to stresses such as tensile stress and torsional stress applied to an object by a dynamic viscoelasticity measuring device. _{Since the loss tangent (tan δ 60} ) of the pressure-sensitive adhesive layer at 60 ° C. is within the above range, the pressure-sensitive adhesive layer is applied even when stress is applied to the pressure-sensitive adhesive layer in the processing step, particularly the dry polishing step. Since the deformation of the chips can be suppressed and the alignment of the chips can be maintained, the scattering of the chips tends to be suppressed.

Further, tan δ ₆₀ is more preferably 0.05 or more, and further preferably 0.10 or more. On the other hand, tan δ ₆₀ is more preferably 0.37 or less.

The shear storage elastic modulus (G') is one of the indexes of the ease of deformation (hardness) of the pressure-sensitive adhesive layer. By the shear storage modulus of the pressure-sensitive adhesive layer at ₆₀ ℃ (G _'60) is within the above range, processing steps, even if particularly in dry polishing step, a stress is applied to the adhesive layer, Since the adhesion between the chip and the pressure-sensitive adhesive layer is good and the holding power of the pressure-sensitive adhesive layer on the chip is maintained, the scattering of the chip tends to be suppressed.

Also, G _'60 is more preferably 3.5 × ¹⁰ 4 Pa or more, more preferably 3.7 × ¹⁰ 4 Pa or more. On the other hand, G _'60 is more preferably at most 5.0 × ¹⁰ 5 Pa, more preferably not more than 1.0 × ¹⁰ 5 Pa.

Therefore, in the present embodiment, by controlling both the loss tangent of the pressure-sensitive adhesive layer and the shear storage elastic modulus at 60 ° C. within the above ranges, the tip is formed when the pressure-sensitive adhesive layer is heated during dry polishing. It is possible to further enhance the effect of effectively suppressing the scattering of.

The loss tangent and the shear storage elastic modulus of the pressure-sensitive adhesive layer may be measured by a known method. For example, using a pressure-sensitive adhesive layer as a sample of a predetermined size, a dynamic viscoelasticity measuring device is used to strain the sample at a predetermined frequency in a predetermined temperature range, measure the elastic modulus, and measure the elastic modulus. From, the loss tangent and the shear storage elastic modulus can be calculated.

The loss tangent and the shear storage elastic modulus mean the physical properties of the uncured pressure-sensitive adhesive layer before being attached to the semiconductor wafer or semiconductor chip at 60 ° C. When the pressure-sensitive adhesive layer is formed from an energy ray-curable pressure-sensitive adhesive, it is the physical characteristics of the pressure-sensitive adhesive layer before energy ray-curing at 60 ° C.

Further, the loss tangent and the shear storage elastic modulus can be changed, for example, by adjusting the composition of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer.

The thickness of the pressure-sensitive adhesive layer is preferably less than 200 μm, more preferably 5 to 80 μm, and even more preferably 10 to 70 μm. When the pressure-sensitive adhesive layer is thinned in this way, the proportion of low-rigidity portions of the pressure-sensitive adhesive tape can be reduced, so that it becomes easier to prevent chipping of the semiconductor chip that occurs during backside grinding.

(1.7. Composition of adhesive layer)
The composition of the pressure-sensitive adhesive layer is not particularly limited, but in order to realize the above physical properties, in the present embodiment, the pressure-sensitive adhesive layer is, for example, an acrylic pressure-sensitive adhesive, a urethane-based pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, or a silicone-based pressure-sensitive adhesive. It is preferably composed of an agent or the like and is preferably composed of an acrylic pressure-sensitive adhesive.

Further, the pressure-sensitive adhesive layer is preferably formed from an energy ray-curable pressure-sensitive adhesive. By forming the pressure-sensitive adhesive layer from the energy ray-curable pressure-sensitive adhesive, the loss tangent and the shear storage elastic modulus are set in the above ranges before curing by energy ray irradiation, and the peeling force is 1000 mN / after curing. It can be easily set to 50 mm or less.

Specific examples of the pressure-sensitive adhesive will be described in detail below, but these are non-limiting examples, and the pressure-sensitive adhesive layer in the present invention should not be construed as being limited to these.

Examples of the energy ray-curable adhesive include an energy ray-curable adhesive containing a non-energy ray-curable adhesive resin (also referred to as “adhesive resin I”) and an energy ray-curable compound other than the adhesive resin. An agent composition (hereinafter, also referred to as “X-type pressure-sensitive adhesive composition”) can be used. Further, as an energy ray-curable adhesive, an energy ray-curable adhesive resin (hereinafter, also referred to as "adhesive resin II") in which an unsaturated group is introduced into the side chain of a non-energy ray-curable adhesive resin is used. A pressure-sensitive adhesive composition (hereinafter, also referred to as “Y-type pressure-sensitive adhesive composition”) containing as a main component and not containing an energy ray-curable compound other than a pressure-sensitive adhesive resin may also be used.

Further, as the energy ray-curable pressure-sensitive adhesive, an energy ray-curable adhesive containing both X-type and Y-type, that is, an energy ray-curable adhesive resin II and an energy ray-curable compound other than the adhesive resin. A pressure-sensitive adhesive composition (hereinafter, also referred to as “XY type pressure-sensitive adhesive composition”) may be used.

Among these, it is preferable to use an XY type pressure-sensitive adhesive composition. By using the XY type pressure-sensitive adhesive composition, it is possible to have sufficient adhesive properties before curing, but to sufficiently reduce the peeling force against the semiconductor wafer after curing.

However, the pressure-sensitive adhesive may be formed from a non-energy ray-curable pressure-sensitive adhesive composition that does not cure even when irradiated with energy rays. The non-energy ray-curable pressure-sensitive adhesive composition contains at least the non-energy ray-curable adhesive resin I, while the non-energy ray-curable pressure-sensitive adhesive resin II and the energy ray-curable compound are not contained. It is a composition.

In the following description, "adhesive resin" is used as a term referring to one or both of the above-mentioned adhesive resin I and adhesive resin II. Specific examples of the adhesive resin include acrylic resin, urethane resin, rubber resin, silicone resin and the like, but acrylic resin is preferable.

(1.7.1. Acrylic resin)
Hereinafter, the acrylic pressure-sensitive adhesive in which an acrylic resin is used as the pressure-sensitive adhesive resin will be described in more detail.

As the acrylic resin, the acrylic polymer (a) is used. The acrylic polymer (a) is obtained by polymerizing a monomer containing at least an alkyl (meth) acrylate, and contains a structural unit derived from the alkyl (meth) acrylate. Examples of the alkyl (meth) acrylate include those having an alkyl group having 1 to 20 carbon atoms, and the alkyl group may be linear or branched. Specific examples of alkyl (meth) acrylates include methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, and 2-ethylhexyl (meth). ) Acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate and the like. The alkyl (meth) acrylate may be used alone or in combination of two or more.

Further, the acrylic polymer (a) preferably contains a structural unit derived from an alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms from the viewpoint of improving the adhesive strength of the pressure-sensitive adhesive layer. The alkyl (meth) acrylate has preferably 4 to 12 carbon atoms, more preferably 4 to 6 carbon atoms. The alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms is preferably an alkyl acrylate.

In the acrylic polymer (a), the content ratio of the alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms is the total amount of monomers constituting the acrylic polymer (a) (hereinafter, also simply referred to as “total amount of monomers”). ), It is preferably 40 to 98% by mass, more preferably 45 to 95% by mass, and further preferably 50 to 90% by mass.

The acrylic polymer (a) contains an alkyl group in order to adjust the elastic modulus and adhesive properties of the pressure-sensitive adhesive layer, in addition to the structural unit derived from the alkyl (meth) aclate having 4 or more carbon atoms in the alkyl group. A copolymer containing a structural unit derived from an alkyl (meth) acrylate having 1 to 3 carbon atoms is preferable. The alkyl (meth) acrylate is preferably an alkyl (meth) acrylate having 1 or 2 carbon atoms, more preferably methyl (meth) acrylate, and most preferably methyl methacrylate. In the acrylic polymer (a), the content ratio of the alkyl (meth) acrylate having an alkyl group having 1 to 3 carbon atoms is preferably 1 to 30% by mass, more preferably 3 to 26% by mass, based on the total amount of the monomers. , More preferably 6 to 22% by mass.

The acrylic polymer (a) preferably has a structural unit derived from a functional group-containing monomer in addition to the structural unit derived from the alkyl (meth) acrylate described above. Examples of the functional group of the functional group-containing monomer include a hydroxyl group, a carboxy group, an amino group, an epoxy group and the like. The functional group-containing monomer reacts with a cross-linking agent described later to serve as a cross-linking starting point, or reacts with an unsaturated group-containing compound to introduce an unsaturated group into the side chain of the acrylic polymer (a). Is.

Examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer. These monomers may be used alone or in combination of two or more. Among these, a hydroxyl group-containing monomer and a carboxy group-containing monomer are preferable, and a hydroxyl group-containing monomer is more preferable.

Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxybutyl (meth). ) Hydroxyalkyl (meth) acrylates such as acrylates and 4-hydroxybutyl (meth) acrylates; unsaturated alcohols such as vinyl alcohols and allyl alcohols.

Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid, and citraconic acid, and their anhydrides. , 2-Carboxyethyl methacrylate and the like.

The content ratio of the functional group monomer is preferably 1 to 35% by mass, more preferably 3 to 32% by mass, still more preferably 6 to 30% by mass, based on the total amount of the monomers constituting the acrylic polymer (a).

In addition to the above, the acrylic polymer (a) is derived from a monomer copolymerizable with the above acrylic monomers such as styrene, α-methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, and acrylamide. It may include a structural unit.

The acrylic polymer (a) can be used as a non-energy ray-curable adhesive resin I (acrylic resin). Further, as the energy ray-curable acrylic resin, a compound obtained by reacting the functional group of the acrylic polymer (a) with a compound having a photopolymerizable unsaturated group (also referred to as an unsaturated group-containing compound) is used. Can be mentioned.

The unsaturated group-containing compound is a compound having both a substituent capable of binding to a functional group of the acrylic polymer (a) and a photopolymerizable unsaturated group. Examples of the photopolymerizable unsaturated group include a (meth) acryloyl group, a vinyl group, an allyl group, a vinylbenzyl group and the like, and a (meth) acryloyl group is preferable.

Examples of the substituent that can be bonded to the functional group of the unsaturated group-containing compound include an isocyanate group and a glycidyl group. Therefore, examples of the unsaturated group-containing compound include (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, and glycidyl (meth) acrylate.

Further, the unsaturated group-containing compound preferably reacts with a part of the functional groups of the acrylic polymer (a), and specifically, 50 to 98 mol of the functional groups of the acrylic polymer (a). % Is preferably reacted with an unsaturated group-containing compound, more preferably 55 to 93 mol%. As described above, in the energy ray-curable acrylic resin, a part of the functional groups remains without reacting with the unsaturated group-containing compound, so that the resin is easily crosslinked by the cross-linking agent.

The weight average molecular weight (Mw) of the acrylic resin is preferably 300,000 to 1.6 million, more preferably 400,000 to 1.4 million, and even more preferably 500,000 to 1.2 million.

(1.7.2. Energy ray curable compound)
As the energy ray-curable compound contained in the X-type or XY-type pressure-sensitive adhesive composition, a monomer or oligomer having an unsaturated group in the molecule and capable of polymerizing and curing by energy ray irradiation is preferable.

Examples of such energy ray-curable compounds include trimethylpropantri (meth) acrylate, pentaerythritol (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-. Polyvalent (meth) acrylate monomers such as butylene glycol di (meth) acrylate and 1,6-hexanediol (meth) acrylate, urethane (meth) acrylate, polyester (meth) acrylate, polyether (meth) acrylate, epoxy ( Examples thereof include oligomers such as meta) acrylate.

Among these, urethane (meth) acrylate oligomers are preferable from the viewpoint of having a relatively high molecular weight and being difficult to reduce the shear storage elastic modulus of the pressure-sensitive adhesive layer. The molecular weight of the energy ray-curable compound (weight average molecular weight in the case of an oligomer) is preferably 100 to 12000, more preferably 200 to 10000, still more preferably 400 to 8000, and particularly preferably 600 to 6000.

The content of the energy ray-curable compound in the X-type pressure-sensitive adhesive composition is preferably 40 to 200 parts by mass, more preferably 50 to 150 parts by mass, and further preferably 60 to 60 parts by mass with respect to 100 parts by mass of the pressure-sensitive adhesive resin. It is 90 parts by mass.

On the other hand, the content of the energy ray-curable compound in the XY type pressure-sensitive adhesive composition is preferably 1 to 30 parts by mass, more preferably 2 to 20 parts by mass, still more preferably, with respect to 100 parts by mass of the pressure-sensitive adhesive resin. Is 3 to 15 parts by mass. In the XY type pressure-sensitive adhesive composition, since the adhesive resin is energy ray-curable, even if the content of the energy ray-curable compound is small, the peeling force can be sufficiently reduced after the energy ray irradiation. Is.

(1.7.3. Crosslinking agent)
The pressure-sensitive adhesive composition preferably further contains a cross-linking agent. The cross-linking agent is, for example, a substance that crosslinks the adhesive resins with each other by reacting with a functional group derived from the functional group monomer of the adhesive resin. Examples of the cross-linking agent include isocyanate-based cross-linking agents such as tolylene diisocyanate, hexamethylene diisocyanate, and their adducts; epoxy-based cross-linking agents such as ethylene glycol glycidyl ether; hexa [1- (2-methyl) -aziridinyl. ] Aziridine-based cross-linking agents such as trifoosphatriazine; chelate-based cross-linking agents such as aluminum chelate; and the like. These cross-linking agents may be used alone or in combination of two or more.

Among these, an isocyanate-based cross-linking agent is preferable from the viewpoint of increasing the cohesive force to improve the adhesive force and the availability.

From the viewpoint of accelerating the cross-linking reaction, the amount of the cross-linking agent is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass, and further preferably 0 with respect to 100 parts by mass of the adhesive resin. .05-4 parts by mass.

(1.7.4. Photopolymerization Initiator)
When the pressure-sensitive adhesive composition is energy ray-curable, the pressure-sensitive adhesive composition preferably further contains a photopolymerization initiator. By containing the photopolymerization initiator, the curing reaction of the pressure-sensitive adhesive composition can be sufficiently advanced even with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator include benzoin compounds, acetophenone compounds, acylphosphinoxide compounds, titanosen compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones. More specifically, for example, 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl. Examples thereof include phenylsulfide, tetramethylthiuram monosulfide, azobisisobutyrolnitrile, dibenzyl, diacetyl, 8-chloranthraquinone, bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide and the like.

These photopolymerization initiators may be used alone or in combination of two or more. The blending amount of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and further preferably 0.05 to 5 parts by mass with respect to 100 parts by mass of the adhesive resin. Is.

(1.7.5. Other additives)
The pressure-sensitive adhesive composition may contain other additives as long as the effects of the present invention are not impaired. Examples of other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes and the like. When these additives are blended, the blending amount of the additives is preferably 0.01 to 6 parts by mass with respect to 100 parts by mass of the adhesive resin.

Further, from the viewpoint of improving the coatability on the base material, the buffer layer and the release sheet, the pressure-sensitive adhesive composition may be further diluted with an organic solvent to obtain a solution of the pressure-sensitive adhesive composition.

Examples of the organic solvent include methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, isopropanol and the like.

As these organic solvents, the organic solvent used at the time of synthesizing the adhesive resin may be used as it is, or other than the organic solvent used at the time of synthesis so that the solution of the pressure-sensitive adhesive composition can be uniformly applied. One or more organic solvents of the above may be added.

(1.8. Release sheet)
A release sheet may be attached to the surface of the adhesive tape. Specifically, the release sheet is attached to the surface of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape. The release sheet is attached to the surface of the pressure-sensitive adhesive layer to protect the pressure-sensitive adhesive layer during transportation and storage. The release sheet is detachably attached to the adhesive tape, and is peeled off from the adhesive tape before the adhesive tape is used (that is, before grinding the back surface of the wafer).

The release sheet is a release sheet on which at least one surface has been peeled. Specific examples thereof include a release sheet obtained by applying a release agent on the surface of a release sheet base material.

A resin film is preferable as the base material for the release sheet, and examples of the resin constituting the resin film include polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate resin, polypropylene resin, and polyethylene resin. Examples thereof include the polyolefin resin of. Examples of the release agent include rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins, and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins.

The thickness of the release sheet is not particularly limited, but is preferably 10 to 200 μm, more preferably 20 to 150 μm.

(2. Adhesive tape manufacturing method)
The method for producing the adhesive tape of the present invention is not particularly limited, and the adhesive tape can be produced by a known method.

For example, the pressure-sensitive adhesive layer provided on the release sheet can be attached to one side of the base material to produce an adhesive tape in which the release sheet is attached to the surface of the pressure-sensitive adhesive layer. Further, by adhering the cushioning layer provided on the release sheet and the base material and removing the release sheet, a laminate of the buffer layer and the base material can be obtained. Then, the pressure-sensitive adhesive layer provided on the release sheet can be attached to the base material side of the laminate to produce an adhesive tape in which the release sheet is attached to the surface of the pressure-sensitive adhesive layer. When the buffer layer is provided on both sides of the base material, the pressure-sensitive adhesive layer is formed on the buffer layer. The release sheet attached to the surface of the pressure-sensitive adhesive layer may be appropriately peeled off and removed before using the pressure-sensitive adhesive tape.

As a method of forming the pressure-sensitive adhesive layer on the release sheet, the pressure-sensitive adhesive composition is directly applied onto the release sheet by a known coating method, the coating film is heated and dried, and the solvent is volatilized to form a pressure-sensitive adhesive. Layers can be formed. Examples of the coating method include a spin coating method, a spray coating method, a bar coating method, a knife coating method, a roll coating method, a blade coating method, a die coating method, and a gravure coating method. Similarly, the pressure-sensitive adhesive composition may be applied directly on one side of the substrate or on the buffer layer to form the pressure-sensitive adhesive layer.

(3. Manufacturing method of semiconductor device)
In the pre-dicing method, the adhesive tape of the present invention is particularly preferably used when it is attached to the surface of a semiconductor wafer to grind the back surface of the wafer and then dry-polished. As a non-limiting example of the use of the adhesive tape, a method for manufacturing a semiconductor device will be described in more detail below.

Specifically, the method for manufacturing a semiconductor device includes at least the following steps 1 to 4.
Step 1: A process of forming a groove from the surface side of the semiconductor wafer Step 2: A process of attaching the above-mentioned adhesive tape to the surface of the semiconductor wafer Step 3: A semiconductor in which the above-mentioned adhesive tape is attached to the surface and the above-mentioned groove is formed. Wafer is ground from the back surface side, the bottom of the groove is removed, the wafer is fragmented into a plurality of chips, and the individualized chips are dry-polished. Step 4: Individualized Step of peeling adhesive tape from semiconductor wafer (that is, multiple semiconductor chips)

Hereinafter, each step of the method for manufacturing the semiconductor device will be described in detail.

(3.1. Step 1)
In step 1, a groove is formed from the surface side of the semiconductor wafer. The groove formed in this step is a groove having a depth shallower than the thickness of the semiconductor wafer. The groove can be formed by dicing using a conventionally known wafer dicing apparatus or the like. Further, the semiconductor wafer is divided into a plurality of semiconductor chips along the groove by removing the bottom portion of the groove in step 3 described later.

The semiconductor wafer used in this manufacturing method may be a silicon wafer, a wafer such as gallium arsenide or arsenide, a glass wafer, or a sapphire wafer. The thickness of the semiconductor wafer before grinding is not particularly limited, but is usually about 500 to 1000 μm. Further, a semiconductor wafer usually has a circuit formed on its surface. The circuit can be formed on the wafer surface by various methods including a conventionally used general-purpose method such as an etching method, a lift-off method, and a blade method.

(3.2. Step 2)
In step 2, the adhesive tape of the present invention is attached to the surface of the semiconductor wafer on which the grooves are formed via the adhesive layer.

The semiconductor wafer to which the adhesive tape is attached and the groove is formed is placed on a suction table, and is sucked and held by the suction table. At this time, the surface side of the semiconductor wafer is arranged on the table side and is adsorbed.

(3.3. Step 3)
After the steps 1 and 2, the back surface of the semiconductor wafer on the suction table is ground to separate the semiconductor wafer into a plurality of semiconductor chips.

Here, since the semiconductor wafer is formed with grooves having a depth shallower than the thickness of the semiconductor wafer, the back surface grinding is performed so as to thin the semiconductor wafer at least to a position reaching the bottom of the grooves. By this backside grinding, the groove becomes a notch penetrating the wafer, and the semiconductor wafer is divided by the notch and individualized into individual semiconductor chips.

The shape of the individualized semiconductor chip may be a square shape or an elongated shape such as a rectangle. The thickness of the fragmented semiconductor chip is not particularly limited, but is preferably about 5 to 100 μm, and more preferably 10 to 45 μm. The size of the fragmented semiconductor chip is not particularly limited, but the chip size is preferably ^{less than 50 mm 2} , more preferably less than 30 mm ² , and even more preferably less than ^{10 mm 2.}

After the back surface grinding is completed, dry polishing is performed.

In backside grinding, grinding marks remain on the backside of the insert, which is a factor that impairs the bending strength of the insert. As a result of thinning and miniaturization of the chip, the chip is easily damaged, and a decrease in bending strength is regarded as a problem. In order to remove the above-mentioned grinding marks (damaged parts), it is preferable to remove the damaged parts by dry polishing without using water after grinding the back surface to improve the bending strength of the tip.

However, unlike backside grinding, water is not used during dry polishing, so the heat generated during polishing is not removed by water, and the chips become hot. The heat of the chip propagates to the adhesive tape to which the chip is attached. As a result, at the time of dry polishing, the temperature of the adhesive tape becomes 60 ° C. or higher, the holding force of the adhesive tape against the chip becomes insufficient, and the chip may peel off and scatter. However, by using the adhesive tape of the present invention, deformation of the adhesive tape can be suppressed and chip scattering can be reduced. Therefore, the adhesive tape of the present invention is particularly preferably used for holding a semiconductor wafer or chip in a pre-dicing method including a dry polishing step.

That is, by using the adhesive tape of the present invention, even in such a thin and / or small semiconductor chip, at the time of backside grinding and dry polishing (step 3), and at the time of peeling the adhesive tape (step 4). It is prevented that the semiconductor chip is chipped.

(3.4. Step 4)
Next, the adhesive tape is peeled off from the fragmented semiconductor wafer (that is, a plurality of semiconductor chips). This step is performed by, for example, the following method.

First, when the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is formed from an energy ray-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer is cured by irradiating with energy rays. Next, a pickup tape is attached to the back surface side of the fragmented semiconductor wafer, and the position and direction are adjusted so that the pickup can be picked up. At this time, the ring frame arranged on the outer peripheral side of the wafer is also attached to the pickup tape, and the outer peripheral edge portion of the pickup tape is fixed to the ring frame. The wafer and the ring frame may be attached to the pickup tape at the same time, or may be attached at different timings. Next, the adhesive tape is peeled off from the plurality of semiconductor chips fixed on the pickup tape.

After that, a plurality of semiconductor chips on the pickup tape are picked up and fixed on a substrate or the like to manufacture a semiconductor device.

The pickup tape is not particularly limited, but is composed of, for example, a base material and a pressure-sensitive adhesive sheet provided with a pressure-sensitive adhesive layer provided on one surface of the base material.

Also, an adhesive tape can be used instead of the pickup tape. The adhesive tape is composed of a laminate of a film-like adhesive and a release sheet, a laminate of a dicing tape and a film-like adhesive, and an adhesive layer and a release sheet having the functions of both a dicing tape and a die bonding tape. Examples include dicing and die bonding tapes. Further, before attaching the pickup tape, a film-like adhesive may be attached to the back surface side of the individualized semiconductor wafer. When a film-like adhesive is used, the film-like adhesive may have the same shape as the wafer.

When using an adhesive tape or when applying a film-like adhesive to the back side of a semiconductor wafer that has been separated before attaching the pickup tape, the plurality of semiconductor chips on the adhesive tape or pickup tape are semiconductors. It is picked up with an adhesive layer divided into the same shape as the chip. Then, the semiconductor chip is fixed on a substrate or the like via an adhesive layer, and a semiconductor device is manufactured. The division of the adhesive layer is performed by laser or expanding.

In the above, an example of using the adhesive tape of the present invention in a method of individually separating a semiconductor wafer by a pre-dicing method and performing dry polishing has been described.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and may be modified in various ways within the scope of the present invention.

Hereinafter, the invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

The measurement method and evaluation method in this example are as follows.

(Tensile storage elastic modulus)
A 15 mm width × 10 mm (length) measuring film made of the same material as the film or sheet constituting the base material was prepared. With a dynamic viscoelastic device (manufactured by Orientec, trade name "Rheoviron DDV-II-EP1"), the tensile elastic modulus in the temperature range of -20 to 150 ° C. at a frequency of 11 Hz was measured for 10 samples of the film for measurement. It was measured. The average value of the tensile elastic modulus of 10 samples at 60 ° C. was E _'60.

(Evaluation of chip scattering)
The adhesive tape with a release sheet obtained in Examples and Comparative Examples was set on a tape laminator (manufactured by Lintec Corporation, trade name "RAD-3510") while peeling off the release sheet, and a groove was formed on the wafer surface by a dicing method. It was attached to the formed 12-inch silicon wafer (thickness 760 μm) under the following conditions.
Roll height: 0 mm
Roll temperature: 23 ° C (room temperature)
Table temperature: 23 ° C (room temperature)

The obtained silicon wafer with adhesive tape was fragmented into pieces having a thickness of 30 μm and a chip size of 1 mm square by backside grinding (tip dicing method).

After the back surface grinding was completed, the ground surface was dry-polished with DPG8760 manufactured by DISCO Corporation. For the polishing wheel, "Gettering DP" manufactured by DISCO was used. By this dry polishing, the damaged part (grinding mark) of the chip was removed.

After the dry polishing was completed, the state of the chips held at the end of the adhesive tape was visually observed to confirm the presence or absence of chip scattering. The case where the chips were not scattered was regarded as "good", and the case where the chips were scattered was regarded as "bad". Since the chips existing in the outermost peripheral region of the silicon wafer have a shape (usually a triangular shape) different from the chips having a desired shape (usually a square shape), the scattering of these chips is described above. Was not considered in the evaluation of. That is, in the above evaluation, only the presence or absence of scattering of the square-shaped chips was evaluated.

The mass parts of the following Examples and Comparative Examples are all solid content values.

(Multi-layer base material)
Polyethylene terephthalate films having a thickness of 25.0 μm and 75.0 μm (tensile storage elastic modulus: 2500 MPa) were used as the base material. A multi-layer base material provided with a buffer layer (LDPE, low-density polyethylene) having a thickness of 27.5 μm on both sides of these base materials was prepared. Therefore, the structure of the multi-layer base material is as follows.
Multi-layer substrate 1: LDPE (27.5 μm) / PET (25.0 μm) / LDPE (27.5 μm)
Multi-layer substrate 2: LDPE (27.5 μm) / PET (75.0 μm) / LDPE (27.5 μm)

(Preparation of Adhesive Composition A)
An acrylic polymer (a) obtained by copolymerizing 65 parts by mass of butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA) and 15 parts by mass of 2-hydroxyethyl acrylate (HEA) was added to an acrylic polymer (a). 2-Methylloyloxyethyl isocyanate (MOI) was reacted so as to be added to 80 mol% of the total hydroxyl groups in a) to obtain an energy ray-curable acrylic resin (Mw: 500,000).

With respect to 100 parts by mass of the obtained energy ray-curable acrylic resin, 6 parts by mass of urethane acrylate oligomer (UT-4220, manufactured by Nippon Synthetic Chemical Industry Co., Ltd.) as an energy ray-curable compound and a tolylene diisocyanate-based cross-linking agent ( 0.375 parts by mass (solid content) of Coronate L manufactured by Toso Co., Ltd. and 1.00 parts by mass (solid ratio) of photopolymerization initiator (Irgacure 184 manufactured by Ciba Specialty Chemicals Co., Ltd.) are mixed to generate energy rays. A curable pressure-sensitive adhesive composition A was obtained.

(Preparation of Adhesive Composition B)
An acrylic polymer (a) obtained by copolymerizing 52 parts by mass of butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA) and 28 parts by mass of 2-hydroxyethyl acrylate (HEA) was added to an acrylic polymer (a). 2-Methylloyloxyethyl isocyanate (MOI) was reacted so as to be added to 90 mol% of the total hydroxyl groups in a) to obtain an energy ray-curable acrylic resin (Mw: 600,000).

To 100 parts by mass of the obtained energy ray-curable acrylic resin, 0.50 parts by mass (solid content) of a tolylene diisocyanate-based cross-linking agent (Coronate L manufactured by Toso Co., Ltd.) and a photopolymerization initiator (Ciba Specialty Chemicals) Irgacure 184) manufactured by the same company was mixed with 3.70 parts by mass (solid ratio) to obtain an energy ray-curable pressure-sensitive adhesive composition B.

(Example 1)
The peeling surface of the peeling sheet (SP-PET38131 manufactured by Lintec Corporation) is coated with the coating liquid of the energy ray-curable pressure-sensitive adhesive composition A obtained above, dried by heating at 100 ° C. for 1 minute, and peeled. An adhesive layer having a thickness of 20 μm was formed on the sheet.

The formed adhesive layer was bonded to one side of the multilayer base material 1 to prepare an adhesive tape. The obtained adhesive tape was measured tensile storage modulus E _'60 of the base material at 60 ° C., also were scattered evaluation chip. The results are shown in Table 1.

(Example 2)
An adhesive tape was produced in the same manner as in Example 1 except that the multilayer base material 2 was used as the base material. The obtained adhesive tape was measured tensile storage modulus E _'60 of the base material at 60 ° C., also were scattered evaluation chip. The results are shown in Table 1.

(Comparative Example 1)
An adhesive tape was produced in the same manner as in Example 1 except that polyvinyl chloride having a thickness of 80 μm was used as a base material and the pressure-sensitive adhesive composition B was used as the pressure-sensitive adhesive layer. The obtained adhesive tape was measured tensile storage modulus E _'60 of the base material at 60 ° C., also were scattered evaluation chip. The results are shown in Table 1.

(Comparative Example 2)
An adhesive tape was produced in the same manner as in Example 1 except that a polyolefin having a thickness of 80 μm was used as the base material and the pressure-sensitive adhesive composition B was used as the pressure-sensitive adhesive layer. The obtained adhesive tape was measured tensile storage modulus E _'60 of the base material at 60 ° C., also were scattered evaluation chip. The results are shown in Table 1.

From Table 1, when the tensile storage modulus E _'60 of the base material at 60 ° C. is within the range described above, it was confirmed that the scattering of chips can be suppressed.

Claims (2)

It is used by being attached to the surface of a semiconductor wafer in the process of grinding the back surface of a semiconductor wafer having grooves formed on the surface of the semiconductor wafer, separating the semiconductor wafer into semiconductor chips by grinding, and then performing dry polishing. It is an adhesive tape
Includes a substrate and an adhesive layer provided on one side thereof,
An adhesive tape having a tensile storage elastic modulus of the base material at 60 ° C. of 250 MPa or more. The process of forming grooves from the surface side of the semiconductor wafer,
A step of attaching an adhesive tape containing a base material and an adhesive layer provided on one side thereof and having a tensile storage elastic modulus of the base material at 60 ° C. of 250 MPa or more to the surface of the semiconductor wafer.
A step of grinding a semiconductor wafer on which the adhesive tape is attached to the front surface and the grooves are formed from the back surface side to remove the bottom of the grooves and individualize them into a plurality of chips.
A process of performing dry polishing after the semiconductor wafer is separated into semiconductor chips, and
The process of peeling the chip from the adhesive tape and
A method for manufacturing a semiconductor device.