JPWO2019145819A5 - - Google Patents
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- JPWO2019145819A5 JPWO2019145819A5 JP2019567415A JP2019567415A JPWO2019145819A5 JP WO2019145819 A5 JPWO2019145819 A5 JP WO2019145819A5 JP 2019567415 A JP2019567415 A JP 2019567415A JP 2019567415 A JP2019567415 A JP 2019567415A JP WO2019145819 A5 JPWO2019145819 A5 JP WO2019145819A5
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- JP
- Japan
- Prior art keywords
- oxide
- conductive layer
- insulating layer
- layer
- height
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 4
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023014126A JP2023052830A (ja) | 2018-01-25 | 2023-02-01 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018010166 | 2018-01-25 | ||
| JP2018010166 | 2018-01-25 | ||
| JP2018030372 | 2018-02-23 | ||
| JP2018030372 | 2018-02-23 | ||
| PCT/IB2019/050285 WO2019145819A1 (ja) | 2018-01-25 | 2019-01-15 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023014126A Division JP2023052830A (ja) | 2018-01-25 | 2023-02-01 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2019145819A1 JPWO2019145819A1 (ja) | 2021-01-14 |
| JPWO2019145819A5 true JPWO2019145819A5 (https=) | 2022-01-18 |
| JP7221224B2 JP7221224B2 (ja) | 2023-02-13 |
Family
ID=67395292
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019567415A Active JP7221224B2 (ja) | 2018-01-25 | 2019-01-15 | 半導体装置 |
| JP2023014126A Withdrawn JP2023052830A (ja) | 2018-01-25 | 2023-02-01 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023014126A Withdrawn JP2023052830A (ja) | 2018-01-25 | 2023-02-01 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11239237B2 (https=) |
| JP (2) | JP7221224B2 (https=) |
| KR (1) | KR102662909B1 (https=) |
| CN (1) | CN111954932B (https=) |
| WO (1) | WO2019145819A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7354138B2 (ja) * | 2018-04-02 | 2023-10-02 | ラム リサーチ コーポレーション | 酸化ハフニウム系強誘電材料のためのキャップ層 |
| US11031490B2 (en) * | 2019-06-27 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd | Fabrication of field effect transistors with ferroelectric materials |
| US11588036B2 (en) * | 2020-11-11 | 2023-02-21 | Vanguard International Semiconductor Corporation | High-efficiency packaged chip structure and electronic device including the same |
| CN115206994A (zh) * | 2021-04-09 | 2022-10-18 | 株式会社日本显示器 | 显示装置 |
| CN114339313B (zh) * | 2021-12-28 | 2024-09-13 | 维沃移动通信有限公司 | 插帧方法、装置及电子设备 |
| KR20240141735A (ko) * | 2021-12-29 | 2024-09-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 기억 장치 |
| US20240395934A1 (en) * | 2023-05-24 | 2024-11-28 | The Boeing Company | Semiconductor devices for use in high-pressure environments |
| US12444455B2 (en) * | 2023-06-06 | 2025-10-14 | Fujian Jinhua Integrated Circuit Co., Ltd. | Memory structure |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014181785A1 (en) * | 2013-05-09 | 2014-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| DE102014019794B4 (de) | 2013-05-20 | 2024-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| JP6400336B2 (ja) | 2013-06-05 | 2018-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6322503B2 (ja) * | 2013-07-16 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015053477A (ja) * | 2013-08-05 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| JP6444714B2 (ja) * | 2013-12-20 | 2018-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2015145292A1 (en) * | 2014-03-28 | 2015-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
| TWI663726B (zh) * | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
| US9768317B2 (en) | 2014-12-08 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of semiconductor device, and electronic device |
| US10056497B2 (en) | 2015-04-15 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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2019
- 2019-01-15 CN CN201980009097.3A patent/CN111954932B/zh active Active
- 2019-01-15 JP JP2019567415A patent/JP7221224B2/ja active Active
- 2019-01-15 US US16/961,976 patent/US11239237B2/en not_active Expired - Fee Related
- 2019-01-15 KR KR1020207023860A patent/KR102662909B1/ko active Active
- 2019-01-15 WO PCT/IB2019/050285 patent/WO2019145819A1/ja not_active Ceased
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2023
- 2023-02-01 JP JP2023014126A patent/JP2023052830A/ja not_active Withdrawn