CN111954932B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN111954932B
CN111954932B CN201980009097.3A CN201980009097A CN111954932B CN 111954932 B CN111954932 B CN 111954932B CN 201980009097 A CN201980009097 A CN 201980009097A CN 111954932 B CN111954932 B CN 111954932B
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China
Prior art keywords
oxide
insulating layer
transistor
layer
conductive layer
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CN201980009097.3A
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English (en)
Chinese (zh)
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CN111954932A (zh
Inventor
野中裕介
石原典隆
平松智记
本田龙之介
鸭川知世
方堂凉太
栃林克明
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN111954932A publication Critical patent/CN111954932A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
CN201980009097.3A 2018-01-25 2019-01-15 半导体装置 Active CN111954932B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018010166 2018-01-25
JP2018-010166 2018-01-25
JP2018-030372 2018-02-23
JP2018030372 2018-02-23
PCT/IB2019/050285 WO2019145819A1 (ja) 2018-01-25 2019-01-15 半導体装置

Publications (2)

Publication Number Publication Date
CN111954932A CN111954932A (zh) 2020-11-17
CN111954932B true CN111954932B (zh) 2025-02-07

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Country Status (5)

Country Link
US (1) US11239237B2 (https=)
JP (2) JP7221224B2 (https=)
KR (1) KR102662909B1 (https=)
CN (1) CN111954932B (https=)
WO (1) WO2019145819A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7354138B2 (ja) * 2018-04-02 2023-10-02 ラム リサーチ コーポレーション 酸化ハフニウム系強誘電材料のためのキャップ層
US11031490B2 (en) * 2019-06-27 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd Fabrication of field effect transistors with ferroelectric materials
US11588036B2 (en) * 2020-11-11 2023-02-21 Vanguard International Semiconductor Corporation High-efficiency packaged chip structure and electronic device including the same
CN115206994A (zh) * 2021-04-09 2022-10-18 株式会社日本显示器 显示装置
CN114339313B (zh) * 2021-12-28 2024-09-13 维沃移动通信有限公司 插帧方法、装置及电子设备
KR20240141735A (ko) * 2021-12-29 2024-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 기억 장치
US20240395934A1 (en) * 2023-05-24 2024-11-28 The Boeing Company Semiconductor devices for use in high-pressure environments
US12444455B2 (en) * 2023-06-06 2025-10-14 Fujian Jinhua Integrated Circuit Co., Ltd. Memory structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105190902A (zh) * 2013-05-09 2015-12-23 株式会社半导体能源研究所 半导体装置及其制造方法
CN106165106A (zh) * 2014-03-28 2016-11-23 株式会社半导体能源研究所 晶体管以及半导体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014019794B4 (de) 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
JP6322503B2 (ja) * 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
JP2015053477A (ja) * 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6444714B2 (ja) * 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI663726B (zh) * 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
US9768317B2 (en) 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105190902A (zh) * 2013-05-09 2015-12-23 株式会社半导体能源研究所 半导体装置及其制造方法
CN106165106A (zh) * 2014-03-28 2016-11-23 株式会社半导体能源研究所 晶体管以及半导体装置

Also Published As

Publication number Publication date
JP2023052830A (ja) 2023-04-12
KR102662909B1 (ko) 2024-05-03
CN111954932A (zh) 2020-11-17
JPWO2019145819A1 (ja) 2021-01-14
US11239237B2 (en) 2022-02-01
WO2019145819A1 (ja) 2019-08-01
KR20200110775A (ko) 2020-09-25
JP7221224B2 (ja) 2023-02-13
US20210082920A1 (en) 2021-03-18

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