JPWO2019143945A5

JPWO2019143945A5 -

Info

Publication number: JPWO2019143945A5
Application number: JP2020539230A
Authority: JP
Publication date: 2023-08-24

Description

図１は、例証的実施形態による、ＤＢＲのための多孔性多重層処理を用いて層状構造を成長させるためのプロセスを図示する例示的略図を示す。プロセス１００は、１０２において、基板１０４を選択することによって開始する。１０６において、基板の一部が、第１の多孔度を伴う多孔性部分１０８として、基板１０４内で修正される。例えば、多孔性部分１０８は、基板１０４のエリアが、エッチングされ、多孔性部分１０８を形成するように、基板１０４のあるエリアを酸性電流にさらすことによって生成される。第１の多孔度は、酸性電流の濃度および／または流体速度を制御することによって構成され得る。１１０において、１つ以上のエピタキシャル層１１２が、多孔性多重層１０８の上にエピタキシャルに成長させられ、エピタキシャル層１１２は、活性量子井戸キャップを閉じ込めることができる。１１４において、多孔性多重層１０８と同じ多孔度を有する別の多孔性多重層１１６が、支持層１１２の上に作成される。第２の多孔性多重層１１６は、多孔性多重層１０８と整列させられ、ＶＣＳＥＬを作成する。
FIG. 1 shows an exemplary diagram illustrating a process for growing a layered structure using porous multi-layer processing for DBRs, according to an illustrative embodiment. Process 100 begins at 102 by selecting a substrate 104 . At 106, a portion of the substrate is modified within substrate 104 as porous portion 108 with a first porosity. For example, porous portion 108 is created by exposing an area of substrate 104 to an acidic current such that the area of substrate 104 is etched to form porous portion 108 . The first porosity can be configured by controlling the acid current concentration and/or fluid velocity. At 110, one or more epitaxial layers 112 are epitaxially grown over the porous multilayer 108, where the epitaxial layers 112 can confine the active quantum well cap. At 114 , another porous multilayer 116 having the same porosity as porous multilayer 108 is formed over support layer 112 . A second porous multilayer 116 is aligned with porous multilayer 108 to create a VCSEL.

Claims

A structure, said structure comprising:
a substrate including a first porous region having a first porosity, said first porous region being formed within said substrate;
an active quantum well region epitaxially grown over the first porous region;
a second porous region overlying the active quantum well region, the second porous region having the first porosity;
edges of the second porous region are aligned with edges of the first porous region;
The structure wherein the substrate is a single base material.

2. The structure of claim 1, wherein said substrate is composed of germanium or gallium arsenide.

At least a first portion of the active quantum well region and a stack of the second porous regions aligned with the first porous region and the first porous region are at a first wavelength at a first wavelength. of light waves to pass through said stack.

the structure further comprising a first epitaxial distributed Bragg reflector multilayer grown over the substrate between the first porous region and the active quantum well region;
said second porous region comprising a second epitaxial distributed Bragg reflector multilayer overlying said active quantum well region;
The first reflectivity of the first epitaxial distributed Bragg reflector multilayer is different than the second reflectivity of the second epitaxial distributed Bragg reflector multilayer, thereby providing the first porous region and performing a stack of the first epitaxial distributed Bragg reflector multilayer and the second epitaxial distributed Bragg reflector multilayer for allowing a first light wave at a first wavelength to pass through the stack; 2. The structure of claim 1, wherein the structure is

The first porous region and the second porous region are aligned with a first region in the active quantum well region, the substrate includes a third porous region, and the third porous region comprises: a porous region is formed in the substrate;
the structure further comprising a fourth porous region overlying the active quantum well region, the fourth porous region having a second porosity;
said second porous region and said fourth porous region are porous portions of a bulk layer grown over said active quantum well region;
2. The structure of claim 1, wherein said third porous region and said fourth porous region are aligned with a second region in said active quantum well region.

the first porous region and the third porous region have different dimensions or different porosities;
6. The structure of claim 5, wherein said second porous region and said fourth porous region have different dimensions or different porosities.

At least the first and second porous regions of the first porous region and the active quantum well region are configured to allow passage of a first optical wave at a first wavelength. forming a VCSEL, wherein at least the second and fourth porous regions of the third porous region and the active quantum well region are transparent to a second light wave at a second wavelength; 6. The structure of claim 5 forming a second VCSEL that enables

said second porous region is a porous portion of a bulk layer grown over said active quantum well region;
The bulk layer has a plurality of spatially distributed porous multilayers, each porous multilayer of the plurality of spatially distributed porous multilayers having a specific wavelength of 2. The structure of claim 1, having a porosity selected to provide a particular reflectivity of each porous multilayer to allow light waves to pass through.

The structure further comprises a pseudomorphic high electron mobility transistor or a heterojunction bipolar transistor, wherein the pseudomorphic high electron mobility transistor or the heterojunction bipolar transistor comprises the second porous region and the fourth porous region. 6. The structure of claim 5 integrated into the bulk wafer in spaces between the porous regions.

6. The method of claim 5, wherein said second porous region and said fourth porous region have said first porosity and are connected to each other as a continuous porous multilayer in said bulk wafer. structure.

The structure further comprises one or more vertical porous portions, wherein the one or more vertical porous portions comprises the first porous region and the active quantum well region and the second porous region. perpendicular to and across the first porous region and the active quantum well region and the second porous region;
4. The one or more porous portions form a plurality of VCSELs by dividing the stack of the first porous region and the active quantum well region and the second porous region. 1. The structure described in 1.

The thickness and porosity of at least one vertical porous portion are selected to form a porous filter, said porous filter being such that a third light wave at a third wavelength is 2 from said plurality of VCSELs. 12. The structure of claim 11 allowing passage between two adjacent VCSELs.

The thickness and porosity of at least one vertical porous portion are selected to form a porous separator, said porous separator blocking any light wave between two adjacent VCSELs from said plurality of VCSELs. 12. The structure of claim 11 which also does not allow passage of

A structure, said structure comprising:
a substrate,
a first porous region having a first porosity, said first porous region being formed within said substrate;
a second porosity region having a second porosity, said second porosity region being formed within said substrate, said second porosity region having said first porosity; a second porous region separated from the region;
an active quantum well region epitaxially grown over said first porous region and said second porous region;
a third porous region overlying said first porous region and overlying said active quantum well region, said third porous region having said first porosity , a third porous region, and
a fourth porous region overlying said second porous region and overlying said active quantum well region, said fourth porous region having said second porosity; and said fourth porous region comprises a fourth porous region separated from said third porous region;
The structure wherein the substrate is a single base material.

15. The structure of claim 14, wherein said active quantum well region extends laterally between said first porous region and said second porous region.

A method, the method comprising:
forming a first porous region within the substrate having a first porosity;
epitaxially growing an active quantum well region over the first porous region;
forming a second porous region over the active quantum well region, wherein the second porous region has the first porosity;
The method, wherein the substrate is a single base material.

17. The method of claim 16, wherein forming the first porous region comprises etching a region of the substrate using an acid current .

18. The method of claim 17, wherein forming the first porous region comprises controlling one or more of concentration of the acid current and fluid velocity of the acid current .

said first porous region comprising a first porous multilayer, said first porous multilayer comprising alternating porous and substantially non-porous layers;
10. The second porous region comprises a second porous multilayer, the second porous multilayer comprising alternating porous and substantially non-porous layers. 1. The structure described in 1.

said first porous region comprising a first porous multilayer, said first porous multilayer comprising alternating porous and substantially non-porous layers;
said second porous region comprises a second porous multilayer, said second porous multilayer comprising alternating porous and substantially non-porous layers;
said third porous region comprising a third porous multilayer, said third porous multilayer comprising alternating porous and substantially non-porous layers;
10. The fourth porous region comprises a fourth porous multilayer, wherein the fourth porous multilayer comprises alternating porous and substantially non-porous layers. The structure described in 14.

said first porous region comprising a first porous multilayer, said first porous multilayer comprising alternating porous and substantially non-porous layers;
10. The second porous region comprises a second porous multilayer, the second porous multilayer comprising alternating porous and substantially non-porous layers. 16. The method according to 16.