JPS58182890A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS58182890A JPS58182890A JP6683582A JP6683582A JPS58182890A JP S58182890 A JPS58182890 A JP S58182890A JP 6683582 A JP6683582 A JP 6683582A JP 6683582 A JP6683582 A JP 6683582A JP S58182890 A JPS58182890 A JP S58182890A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- layer
- epitaxially grown
- diffraction grating
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Abstract
Description
【発明の詳細な説明】
本発明は半導体レーザ装置の製造方法にかかり、特に理
ｉ急値に近い発光効率を有する分布帰還形半導体レーザ
４看の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor laser device, and more particularly to a method of manufacturing a distributed feedback semiconductor laser having a luminous efficiency close to a steep value.
回折格子を内蔵する分布帰還形半導体レーザ装置は、へ
き開面を使用する必要はなく、発光効率全理論値に近づ
けられる可能性を有するため盛んに研究が続けられてい
る。なお回折格子のピッチはレーザ発振波長λとすると
１／２（ｎ＋１）λ（ｎ＝０、１．２．３． ・・・
・・）でなければならないが、発光効率はｎ＝ｏ （０
次モード）が最もよく、また回折格子の断面は方形のと
きが最も高いことが知られている。Distributed feedback semiconductor laser devices with a built-in diffraction grating do not require the use of cleavage planes and have the potential to bring the luminous efficiency close to the total theoretical value, and are therefore being actively researched. Note that the pitch of the diffraction grating is 1/2(n+1)λ (n=0, 1.2.3. . .
), but the luminous efficiency is n=o (0
It is known that the diffraction grating has a rectangular cross section.
然るに従来の分布帰還型の回折格子はホトレジスト技術
によりパターンを形成し、そのパターン全エピタキシャ
ル成長技術により埋めて形成する。However, the conventional distributed feedback type diffraction grating is formed by forming a pattern using a photoresist technique and then filling the entire pattern with an epitaxial growth technique.
例えばＧａｐｓ−ＧａＡｌＡｓ系の半導体レーザ装置に
おいてはその波長は約８００ｉである。従って０次モー
ドを発生させるには回折格子の幅は８０００／２／２と
なり、即ち２０００大のパターン全形成する必要がある
。このパターンの形成は寸法的に容易でなく、かつ形成
されるエツチングによる回折格子は壺も望ましい方形の
溝は形成できず、化学的エツチングによる微細パターン
形成において、良く見られる正弦波形あるいは化合物半
導体特有のエツチング速度の強い面方位依存性による三
角形ないし台形のものしか形成することができない。For example, in a Gaps-GaAlAs semiconductor laser device, the wavelength is about 800i. Therefore, in order to generate the 0th-order mode, the width of the diffraction grating is 8000/2/2, that is, it is necessary to form a complete pattern of 2000 sizes. The formation of this pattern is not easy in terms of dimensions, and the etched diffraction grating that is formed cannot form the desired rectangular grooves. Only triangular or trapezoidal shapes can be formed due to the strong dependence of the etching rate on the surface orientation.
従って０次モードのみの発生はむずかしいと共に、形成
した回折格子が方形に程遠いため光の閉じ込み効率は著
しく低下する結果となる。Therefore, it is difficult to generate only the zero-order mode, and the formed diffraction grating is far from rectangular, resulting in a significant decrease in light confinement efficiency.
従って不発明は以上の問題点に対処してなされ導体レー
ザ装置の製造方法全提供するにある。SUMMARY OF THE INVENTION Therefore, the object of the invention is to address the above problems and provide a complete method for manufacturing a conductor laser device.
すなわち本発明の要旨は、第１の化合物半導体基板の一
生面に第１の化合物半導体の薄層と前記第１の化合物半
導体とへテロ接合を形成する第２の化合物半導体の薄層
とを繰返しエピタキシャル成長し、最後に第１の化合物
半導体の層をエピタキシャル成長した後、エピタキシャ
ル成長面に垂直な面を出して研磨し、さらに前記研磨面
表面に酋ｔ！。That is, the gist of the present invention is to repeatedly form a thin layer of a first compound semiconductor and a thin layer of a second compound semiconductor forming a heterojunction with the first compound semiconductor on the entire surface of a first compound semiconductor substrate. After epitaxially growing and finally epitaxially growing a first compound semiconductor layer, polishing is performed with the surface perpendicular to the epitaxial growth surface exposed, and then a layer of t! is applied to the surface of the polished surface. .
〔第２の化合物半導体の層をエピタキシャル成長するこ
と全特命とする半導体レーザ装置の燗造方法にある。[This is a method for manufacturing a semiconductor laser device in which a second compound semiconductor layer is epitaxially grown.
以下図面を参照し本発明の詳細な説明
第１ １”＜ｌ （ａｌ〜（ｅｌは本発明の一実施例に
よる半導体レーザ装置の製造方法を示す工程別断面図で
ある。DETAILED DESCRIPTION OF THE INVENTION The following is a detailed description of the present invention with reference to the drawings. 1"<l (al~(el) is a cross-sectional view showing each step of a method for manufacturing a semiconductor laser device according to an embodiment of the present invention.
なお本発明はエピタキシャル技術、特にＭ Ｂ Ｅ（ｍ
ｏｌｅｃｕｌａｒ Ｂｅａｍ Ｅｐｉｔａｘｙ）
によれば任意の伝導形および不純物濃度のエピタキシャ
ル薄膜を極めて高精度に膜厚が制御できることに着関し
、０次モード発振に必要な回折格子の２０００λのパタ
ーンの周期的溝を、しかもその断面を好ましい方形に形
成することに特徴がある。Note that the present invention relates to epitaxial technology, particularly M B E (m
olecular beam epitaxy)
According to the authors, it is possible to control the film thickness of an epitaxial thin film of any conductivity type and impurity concentration with extremely high precision, and the periodic grooves of the 2000λ pattern of the diffraction grating necessary for zero-order mode oscillation, as well as its cross section, have been developed. It is characterized by being formed into a preferred rectangular shape.
すなわち第１図（ａｌにおいて１はＧａｐｓの半導体基
板、１の表面には通常はＯａＡｓ基板と同じ第１の化合
物半導体の薄層がＭＢＥによシェビタキシャル成長され
る。ただしこの場合第１の化合物半導体の薄層は省略し
てもよい（図面には表示してない）。２は第１の化合物
半導体上にＭＢＥにより形成した第２の化合物半導体で
第１の化合物半導体層とへテロ接合を形成するＧａＡ．
／Ａｓ の薄層である。また１′は２の上に同様にエピ
タキシャルされた第１の化合物半導体の薄層である。そ
の後以上のように第１の化合物半導体と第２の化合物半
導体が交互に積層され２． ＋／ 、 ２／ 、 １／
／曲１ｎ： ２ｎ’の複層が形成される。これらの薄層
は上記したように何れも０次モード発振の溝の幅に和尚
する２０００Ａの厚さに調節されている。必要な数の層
が形成されると最後に第１の化合物半導（ｎ＋１）’
体層１ を厚く形成する。That is, as shown in FIG. The thin layer of semiconductor may be omitted (not shown in the drawing). 2 is a second compound semiconductor formed on the first compound semiconductor by MBE, and a heterojunction with the first compound semiconductor layer is formed. Forming GaA.
/As is a thin layer. 1' is a thin layer of a first compound semiconductor similarly epitaxially deposited on 2; Thereafter, the first compound semiconductor and the second compound semiconductor are alternately stacked as described above.2. +/ , 2/ , 1/
/Song 1n: A 2n' multilayer is formed. As mentioned above, each of these thin layers is adjusted to have a thickness of 2000 Å, which corresponds to the width of the groove for zero-order mode oscillation. After the required number of layers have been formed, the first compound semiconductor (n+1)' body layer 1 is finally formed thickly.
次に第１１図（ｂｉＶＣ示すとお力エピタキシャル成長
面に垂直な面全出し研磨する。次に研磨面金清浄化し該
表面に第２の化合物半導体のＧａＡｌ！Ａｓ 膚２（ｎ
＋１）’，エビタキシャル成長する。然るときは該エピ
タキシャル層は第１の化合物半導体１およびそのエビタ
キシャル層１’，１’，１“・・−・・１ｎ′。Next, as shown in FIG. 11 (biVC), the entire surface perpendicular to the epitaxial growth surface is polished. Next, the polished surface is cleaned, and a GaAl!As layer 2 (n) of the second compound semiconductor is applied to the surface.
+1)', evitaxial growth. In that case, the epitaxial layer is the first compound semiconductor 1 and its epitaxial layers 1', 1', 1'', . . ., 1n'.
１ （ ｎ ＋ １ ）’とはへテロ接合を形成し、第
２の化合物半導体のエビタキシャル層２．２’，２“・
・−・・ｎ／とは接続される（第１図（ｃｌ参照）。1 (n + 1)' forms a heterojunction, and the second compound semiconductor epitaxial layer 2.2', 2".
... n/ is connected (see Fig. 1 (cl)).
次に複層のエピタキシャル成長層に直角なもう一方の面
全出し、研磨，洗滌したのち第１の化合物半導体層を厚
くエピタキシャル成長させる。このときは多層エピタキ
シャル層により区画形成さ ５ 一
れた矩形領域のうち同じ第１の化合物半導体層とは接続
され、俯２の化合物半導体層とは区画され第１図（ｄｉ
の形態となる。第１図（ｄｉにそれぞれ電極７、８を形
成するとシングルへテロ接合分布帰還形レーザが完成す
る（第１図（ｅ）参照）。第１図（ｅ）Ｊ：、Ｃ明らか
＆とおりＧａＡｓ 層１（ｎ＋１”Ｋ：は２０００λの
溝が形成され、溝はさきにのべたとおり２０００λのエ
ピタキシャル層が用いられ １ （ ｎ ＋ ｌ ）’
およヒ２ （ ｎ ＋ １ ）’の両層はエピタキシャ
ル層に直角の面に付着されているので２００ＯＡの幅を
持つ矩形に形成されている。すなわちＧａ Ａｓ 半
導体レーザの回折格子として最も望ましい幅を持った回
折格子が形成できたことになり、０次モードで発振し、
キャリアの蓄積効果の良好な化合物半導体レーザを得る
ことができる。Next, the other surface perpendicular to the multiple epitaxially grown layers is fully exposed, polished, and cleaned, and then a first compound semiconductor layer is grown thickly epitaxially. At this time, the same first compound semiconductor layer of the divided rectangular regions formed by the multilayer epitaxial layer is connected to the same first compound semiconductor layer, and the compound semiconductor layer of the top 2 is separated and
It takes the form of Figure 1 (By forming electrodes 7 and 8 on di, respectively, a single heterojunction distributed feedback laser is completed (see Figure 1 (e)). Figure 1 (e) J:, C clearly & clearly GaAs layer 1(n+1"K: is a groove of 2000λ, and as mentioned earlier, an epitaxial layer of 2000λ is used for the groove. 1(n+l)'
Both layers 2(n+1)' and 2(n+1)' are formed in a rectangular shape with a width of 200 OA since they are deposited on planes perpendicular to the epitaxial layer. In other words, a diffraction grating with the most desirable width as a diffraction grating for a GaAs semiconductor laser has been formed, and it oscillates in the zero-order mode.
A compound semiconductor laser with a good carrier accumulation effect can be obtained.
第２図は本発明の他の実施例によシ製造された半導体レ
ーザ装置の説明用の断面図であり、本発明方法をダブル
へテロ接合分布帰還形レーザに適 ６ 一
よシ形成されたｎ形のＧａＡｓ層であり、また１２は第
１図（ｅ）の２（ｎ＋１）７層を含み同形のエピタキシ
ャル薄層より形成されたＧａＡｓ層とへテロ接合ｑ邑ル
Ａｓ
を形成するｎ形のキ酊ロ惰ｆ層である。FIG. 2 is an explanatory cross-sectional view of a semiconductor laser device manufactured according to another embodiment of the present invention, in which the method of the present invention is applied to a double heterojunction distributed feedback laser. 12 is an n-type GaAs layer, and 12 is an n-type layer forming a heterojunction with a GaAs layer formed from epitaxial thin layers of the same shape, including the 2(n+1)7 layer shown in FIG. 1(e). This is the inebriated inertia f layer.
従ってＧａ Ａｓ層１２の表面には第１図（ａｌ〜（ｄ
ｌと全く同じ工程でつくられた規定寸法の方形の回折格
子が形成されている。更に！’７４！’Ｊｗ１２の上に
は活世層としてｐ形のＧａＡｓ層１３が形成されている
。また活性層１３の上にはｐ形の素４ム千層１４が形成
されている。この構成で１２および１４の層の材質は活
性層１３より光の屈折率が小さくえらばれている。Therefore, on the surface of the GaAs layer 12, as shown in FIG.
A rectangular diffraction grating with specified dimensions is formed using exactly the same process as in 1. Even more! '74! 'A p-type GaAs layer 13 is formed as an active layer on the Jw 12. Further, on the active layer 13, a p-type elemental layer 14 is formed. In this configuration, the materials for the layers 12 and 14 are selected to have a smaller refractive index for light than the active layer 13.
以上の構成において、活性層１３のほかに、１２はＯ次
発振に好適な回折格子を含む光ガイドおよびキャリア閉
じ込み層であり、１４は同じく光子およびキャリアの閉
じ込み層である。閉じ込みは活性層１３よりその両側の
閉じ込み層１２および１４の光の屈折率を小さくしたこ
とと回折格子の望ましい寸法と形におうところが犬であ
る。In the above configuration, in addition to the active layer 13, 12 is a light guide and carrier confinement layer including a diffraction grating suitable for O-order oscillation, and 14 is also a photon and carrier confinement layer. The confinement is achieved by making the light refractive index of the confinement layers 12 and 14 on both sides of the active layer smaller than that of the active layer 13, and by the desired size and shape of the diffraction grating.
以上の説明かられかるように本構成によれば活性層１３
において発生した光およびキャリアは玉確に望ましい寸
法と形に形成された回折格子と活性層１３をはさむ閉じ
込み層１２および１４により閉じ込められ発光効率のよ
い希望の光を得ることができる。As can be seen from the above description, according to this configuration, the active layer 13
The light and carriers generated are confined by the confinement layers 12 and 14 sandwiching the active layer 13 and a diffraction grating formed in exactly the desired size and shape, thereby making it possible to obtain desired light with high luminous efficiency.
以上説明したとお９本発明によれば発光効率の良い分布
帰還形の半導体レーザ装置を得ることができる。As described above, according to the present invention, it is possible to obtain a distributed feedback type semiconductor laser device with high luminous efficiency.
なお本発明の説明では２つの実施例について述べたが他
の分布帰還形の半導体レーザ装置にも同様に適用できる
ことは言うまでもない。In the description of the present invention, two embodiments have been described, but it goes without saying that the present invention can be similarly applied to other distributed feedback type semiconductor laser devices.
第１図（ａｌ〜（ｅ）は本発明の一実施例による半導体
レーザ装置の製造方法を示す工程別断面図、第２図は本
発明の他の実施例によシ製造された半導体レーザ装置の
断面図である。
１・・・・・ＧａＡｓ化合物半導体基板、１′、１“、
１ｎ′・・・・・・エピタキシャルＧａｐｓ薄層、１（
ｎ＋１）’・・・・・・厚いＧａＡｓ−ｃピタキシャル
層、２．２’ 、 ２″、 ２ｎ・・・電極、１１・・
・・・・ＧａＡｓ層、１２・面・光ガイド。
キャリア閉じ込め層、１３・・・・・活性層、１４・川
・・光子及びキャリア閉じ込め層。
９−1A to 1E are cross-sectional views showing steps for manufacturing a semiconductor laser device according to one embodiment of the present invention, and FIG. 2 is a semiconductor laser device manufactured according to another embodiment of the present invention. It is a cross-sectional view of 1...GaAs compound semiconductor substrate, 1', 1'',
1n'...Epitaxial Gaps thin layer, 1(
n+1)'... Thick GaAs-c pitaxial layer, 2.2', 2'', 2n... Electrode, 11...
...GaAs layer, 12 planes, light guide. Carrier confinement layer, 13... Active layer, 14... Photon and carrier confinement layer. 9-
Claims (1)
導体の薄層と前記第１の化合物半導体とへテロ接合を形
成する第２の化合物半導体の薄層とを繰返しエピタキシ
ャル成長し、最後に第１の化合物半導体のＪｌ−エピタ
キシャル成長した後、全エピタキシャル成長することを
特徴とする半導体レーザ装置の製造方法。A thin layer of a first compound semiconductor and a thin layer of a second compound semiconductor forming a heterojunction with the first compound semiconductor are epitaxially grown repeatedly on the surface of the first compound semiconductor substrate, and finally a thin layer of a second compound semiconductor forming a heterojunction with the first compound semiconductor is epitaxially grown. 1. A method for manufacturing a semiconductor laser device, characterized in that after Jl-epitaxial growth of the compound semiconductor of No. 1, full epitaxial growth is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6683582A JPS58182890A (en) | 1982-04-21 | 1982-04-21 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6683582A JPS58182890A (en) | 1982-04-21 | 1982-04-21 | Manufacture of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58182890A true JPS58182890A (en) | 1983-10-25 |
Family
ID=13327292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6683582A Pending JPS58182890A (en) | 1982-04-21 | 1982-04-21 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58182890A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0559192A2 (en) * | 1992-03-06 | 1993-09-08 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5648192A (en) * | 1979-09-13 | 1981-05-01 | Xerox Corp | Lateral light emitting electroluminescence unit |
-
1982
- 1982-04-21 JP JP6683582A patent/JPS58182890A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5648192A (en) * | 1979-09-13 | 1981-05-01 | Xerox Corp | Lateral light emitting electroluminescence unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0559192A2 (en) * | 1992-03-06 | 1993-09-08 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
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