JPWO2019124391A1 - Encapsulation composition and semiconductor device - Google Patents

Abstract

The sealing composition contains an epoxy resin, a curing agent, and an inorganic filler containing particles of an inorganic material having a Mohs hardness of 8 or more and particles of an inorganic material having a Mohs hardness of 5 or less.

Description

The present invention relates to a sealing composition and a semiconductor device.

In recent years, with the miniaturization and high integration of semiconductor packages, there is a concern about heat generation inside the semiconductor package. Due to heat generation, the performance of electrical or electronic components having a semiconductor package may deteriorate. Therefore, the members used in the semiconductor package are required to have high thermal conductivity. For example, it is required to make the encapsulant of a semiconductor package highly thermally conductive.
As one of the methods for increasing the thermal conductivity of the encapsulant, there is a method of using silica and alumina which is a highly thermally conductive filler as the inorganic filler contained in the encapsulant (see, for example, Patent Document 1).
Further, when the semiconductor package is sealed with a sealing material, warpage after sealing may become a problem. This problem tends to be noticeable in the case of compression molding, which is a large format and batch-sealed. In addition, when the sealed semiconductor package undergoes various thermal histories, the warpage behavior of the semiconductor package may change. As a result, there is a concern that the handling of the semiconductor package in other processes will become difficult.

Japanese Patent No. 4188634

In the method described in Patent Document 1, silica having a lower thermal conductivity than alumina is used as a part of the inorganic filler, so that sufficient thermal conductivity may not be obtained.
Further, since both silica and alumina are hard fillers, the elastic modulus of the cured product tends to increase. As the elastic modulus of the cured product increases, the sealed semiconductor package may be warped to the extent that it becomes difficult to handle in other processes.

One embodiment of the present invention has been made in view of the above-mentioned conventional circumstances, and provides a sealing composition having high thermal conductivity and suppressing the occurrence of warpage, and a semiconductor device using the same. With the goal.

Specific means for achieving the above-mentioned problems are as follows.
<1> A sealing composition containing an epoxy resin, a curing agent, and an inorganic filler containing particles of an inorganic material having a Mohs hardness of 8 or more and particles of an inorganic material having a Mohs hardness of 5 or less.
<2> The sealing composition according to <1>, wherein the particles of the inorganic material having a Mohs hardness of 5 or less have an average circularity of 0.6 or more.
<3> The sealing composition according to <1> or <2>, wherein the proportion of particles of the inorganic material having a Mohs hardness of 5 or less in the inorganic filler is less than 30% by mass.
<4> The sealing composition according to any one of <1> to <3>, wherein the content of the inorganic filler is 88% by volume or less.
<5> A semiconductor device comprising a semiconductor element and a cured product of the sealing composition according to any one of <1> to <4>, which is obtained by sealing the semiconductor element.

According to one embodiment of the present invention, it is possible to provide a sealing composition having high thermal conductivity and suppressing the occurrence of warpage, and a semiconductor device using the same.

Hereinafter, a mode for carrying out the sealing composition and the semiconductor device of the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In the following embodiments, the components (including element steps and the like) are not essential unless otherwise specified. The same applies to the numerical values and their ranges, and does not limit the present invention.
The numerical range indicated by using "~" in the present disclosure includes the numerical values before and after "~" as the minimum value and the maximum value, respectively.
In the numerical range described stepwise in the present disclosure, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. .. Further, in the numerical range described in the present disclosure, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
In the present disclosure, each component may contain a plurality of applicable substances. When a plurality of substances corresponding to each component are present in the composition, the content rate or content of each component is the total content rate or content of the plurality of substances present in the composition unless otherwise specified. Means quantity.
In the present disclosure, a plurality of types of particles corresponding to each component may be contained. When a plurality of particles corresponding to each component are present in the composition, the particle size of each component means a value for a mixture of the plurality of particles present in the composition unless otherwise specified.

<Encapsulation composition>
The sealing composition of the present disclosure includes an epoxy resin, a curing agent, and particles of an inorganic material having a Mohs hardness of 8 or more (hereinafter, may be referred to as “hard material”) (hereinafter, referred to as “hard particles”). Inorganic filler containing particles of an inorganic material having a Mohs hardness of 5 or less (hereinafter, may be referred to as "soft material") (hereinafter, may be referred to as "soft particles"). , Contain.
The sealing composition of the present disclosure has high thermal conductivity and the occurrence of warpage is suppressed. The reason is not clear, but it can be inferred as follows.
The sealing composition contains hard particles and soft particles as an inorganic filler. When hard particles come into contact with each other in the cured product of the sealing composition, the contact between the hard particles is a point contact on the particle surface because the particles are hard. On the other hand, when the hard particles come into contact with the soft particles in the cured product of the sealing composition, the soft particles in contact with the hard particles are deformed at the points where the hard particles come into contact, and the hard particles and the soft particles come into contact with each other. Easy to contact. The heat conduction path formed between the inorganic fillers tends to be wider when the particles are in surface contact with each other than when the particles are in point contact with each other. Therefore, it is presumed that the sealing composition of the present disclosure containing hard particles and soft particles as the inorganic filler has high thermal conductivity.
Further, as compared with the case where only the hard particles are contained as the inorganic filler, the elastic modulus of the cured product is lowered in the sealing composition of the present disclosure containing the soft particles as the inorganic filler together with the hard particles. Therefore, it is presumed that the strain generated in the cured product is easily alleviated and the occurrence of warpage is suppressed.

Hereinafter, each component constituting the sealing composition will be described. The sealing composition of the present disclosure contains an epoxy resin, a curing agent, and an inorganic filler, and may contain other components if necessary.

-Epoxy resin-
The sealing composition contains an epoxy resin. The type of epoxy resin is not particularly limited, and known epoxy resins can be used.
Specifically, for example, it is selected from the group consisting of phenol compounds (eg, phenol, cresol, xylenol, resorcin, catechol, bisphenol A and bisphenol F) and naphthol compounds (eg, α-naphthol, β-naphthol and dihydroxynaphthalene). Epoxy of novolak resin obtained by condensing or co-condensing at least one of the above and an aldehyde compound (eg, formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde and salicylaldehyde) under an acidic catalyst (eg, phenol). Novolak type epoxy resin and orthocresol novolac type epoxy resin); at least selected from the group consisting of bisphenol (eg, bisphenol A, bisphenol AD, bisphenol F and bisphenol S) and biphenol (eg, alkyl-substituted or unsubstituted biphenol). One diglycidyl ether; an epoxie of a phenol-aralkyl resin; an epoxidate of an adduct or a heavy adduct of a phenol compound and at least one selected from the group consisting of dicyclopentadiene and terpen compounds; polybasic acid ( For example, glycidyl ester type epoxy resin obtained by the reaction of phthalic acid and dimer acid) and epichlorohydrin; glycidylamine type epoxy resin obtained by the reaction of polyamine (for example, diaminodiphenylmethane and isocyanuric acid) and epichlorohydrin; Examples include linear aliphatic epoxy resins obtained by oxidation with (for example, peracetic acid); and alicyclic epoxy resins. One type of epoxy resin may be used alone, or two or more types may be used in combination.

From the viewpoint of preventing corrosion of aluminum wiring or copper wiring on an element such as an integrated circuit (IC), the purity of the epoxy resin is preferably high, and the amount of hydrolyzable chlorine is preferably small. From the viewpoint of improving the moisture resistance of the sealing composition, the amount of hydrolyzable chlorine is preferably 500 ppm or less on a mass basis.

Here, the amount of hydrolyzable chlorine is a value obtained by dissolving 1 g of the epoxy resin of the sample in 30 mL of dioxane, adding 5 mL of a 1N-KOH methanol solution, refluxing for 30 minutes, and then performing potentiometric titration.

The content of the epoxy resin in the sealing composition is preferably 1.5% by mass to 20% by mass, more preferably 2.0% by mass to 15% by mass, and 3.0% by mass to 30% by mass. It is more preferably 10% by mass.
The content of the epoxy resin in the sealing composition excluding the inorganic filler is preferably 30% by mass to 65% by mass, more preferably 35% by mass to 60% by mass, and 40% by mass to 55% by mass. It is more preferably by mass%.

-Hardener-
The sealing composition contains a curing agent. The type of curing agent is not particularly limited, and known curing agents can be used.
Specifically, it is selected from the group consisting of, for example, phenol compounds (eg, phenol, cresol, resorcin, catechol, bisphenol A and bisphenol F) and naphthol compounds (eg, α-naphthol, β-naphthol and dihydroxynaphthalene). A novolak resin obtained by condensing or cocondensing at least one kind with an aldehyde compound (for example, formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde and salicylaldehyde) under an acidic catalyst; phenol-aralkyl resin; biphenyl-aralkyl resin; Examples thereof include triphenylmethane-type phenol resins; and naphthol-aralkyl resins. One type of curing agent may be used alone, or two or more types may be used in combination.

The curing agent is blended so that the equivalent of the functional group (for example, phenolic hydroxyl group in the case of novolak resin) of the curing agent is 0.5 equivalent to 1.5 equivalents with respect to 1 equivalent of the epoxy group of the epoxy resin. It is preferable that the curing agent is blended so as to have an amount of 0.7 equivalent to 1.2 equivalent.

-Inorganic filler-
The sealing composition contains an inorganic filler containing particles of an inorganic material having a Mohs hardness of 8 or more and particles of an inorganic material having a Mohs hardness of 5 or less. When the sealing composition contains an inorganic filler, the hygroscopicity of the sealing composition tends to be reduced and the strength in the cured state tends to be improved.

The content of the inorganic filler is preferably 60% by volume or more, preferably 65% by volume or more, based on the entire sealing composition, from the viewpoints of hygroscopicity, reduction of linear expansion coefficient, strength improvement and solder heat resistance. Is more preferable, and 70% by volume or more is further preferable. The content of the inorganic filler is preferably 88% by volume or less, and more preferably 85% by volume or less.

Examples of the hard material include alumina (Mohs hardness: 9), aluminum nitride, silicon carbide, diamond and the like. Among these, alumina is preferable from the viewpoint of thermal conductivity, fluidity and reliability. The Mohs hardness of the hard material is 8 or more, preferably 9 or more. The Mohs hardness of the hard material may be 10 or less.
The average particle size of the hard particles is preferably 0.1 μm to 80 μm, more preferably 0.3 μm to 50 μm, and even more preferably 1 μm to 40 μm.
The average particle size of the inorganic filler can be measured by the following method.

The inorganic filler to be measured is added to the solvent (pure water) within the range of 0.01% by mass to 0.05% by mass, and vibrated with a 110 W ultrasonic cleaner for 1 to 5 minutes. Disperse. About 10 mL of the dispersion is injected into the measurement cell and measured at 25 ° C. As the measuring device, a laser diffraction / scattering type particle size distribution measuring device (for example, Horiba Seisakusho Co., Ltd., LA920 (trade name)) is used to measure the volume-based particle size distribution. The average particle size is obtained as the particle size (D50%) when the accumulation from the small diameter side is 50% in the volume-based particle size distribution.

The ratio of the hard particles to the inorganic filler is preferably 50% by mass or more, more preferably 60% by mass or more, and further preferably 70% by mass or more. The ratio of hard particles to the inorganic filler may be 95% by mass or less.
The average circularity of the hard particles is preferably 0.80 or more, more preferably 0.85 or more, and even more preferably 0.90 or more.

The circularity of the inorganic filler is the circumference measured from the projected image of the inorganic filler as the circumference as a circle calculated from the diameter equivalent to a circle, which is the diameter of a circle having the same area as the projected area of the inorganic filler. It is a numerical value obtained by dividing by the length (length of the contour line), and is calculated by the following formula. The circularity is 1.00 in a perfect circle.
Circularity = (peripheral length of equivalent circle) / (peripheral length of particle cross-sectional image)
Specifically, for the average circularity, an image magnified at a magnification of 1000 times is observed with a scanning electron microscope, 10 inorganic fillers are arbitrarily selected, and the circularity of each inorganic filler is measured by the above method. However, it is a value calculated as the arithmetic mean value. The circularity, the peripheral length of the equivalent circle, and the peripheral length of the projected image of the particles can be obtained by commercially available image analysis software.

Examples of the soft material include boehmite (Mohs hardness: 3.5 to 4), dolomite, mica, hexagonal boron nitride and the like. Among these, boehmite and dolomite are preferable from the viewpoint of fluidity.
The Mohs hardness of the soft material is 5 or less, preferably 4 or less. The Mohs hardness of the soft material may be 2 or more.
The average particle size of the soft particles is preferably 0.1 μm to 20 μm, more preferably 0.3 μm to 10 μm, and even more preferably 0.5 μm to 5 μm.

The ratio of the soft particles to the inorganic filler is preferably less than 30% by mass, more preferably 20% by mass or less, and further preferably 10% by mass or less. The ratio of the soft particles to the inorganic filler may be 5% by mass or more.
The average circularity of the soft particles is preferably 0.6 or more, more preferably 0.7 or more, and even more preferably 0.8 or more.

The inorganic filler may contain particles of other inorganic materials having a Mohs hardness of more than 5 and less than 8 other than hard particles and soft particles. Examples of other inorganic materials include silica (Mohs hardness: 7), magnesium oxide, zinc oxide and the like.
The ratio of particles of other inorganic materials to the inorganic filler may be 10% by mass or less, or 1% by mass or less.

(Curing accelerator)
The sealing composition may further contain a curing accelerator. The type of the curing accelerator is not particularly limited, and a known curing accelerator can be used.
Specifically, 1,8-diaza-bicyclo [5.4.0] undecene-7, 1,5-diaza-bicyclo [4.3.0] nonene, 5,6-dibutylamino-1,8- Cycloamidine compounds such as diaza-bicyclo [5.4.0] undecene-7; maleic anhydride, 1,4-benzoquinone, 2,5-turquinone, 1,4-naphthoquinone, 2,3-dimethyl as cycloamidine compounds Kinone compounds such as benzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, phenyl-1,4-benzoquinone, diazo Compounds with intramolecular polarization formed by adding compounds with π bonds such as phenylmethane and phenolic resins; tertiary amine compounds such as benzyldimethylamine, triethanolamine, dimethylaminoethanol and tris (dimethylaminomethyl) phenol, Derivatives of tertiary amine compounds; imidazole compounds such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, derivatives of imidazole compounds; tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris (4- Methylphenyl) Organic phosphine compounds such as phosphine, diphenylphosphine, and phenylphosphine; Phosphorus compounds: Tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, 2-ethyl-4-methylimidazole tetraphenylborate, N-methylmorpholin tetraphenylborate and other tetraphenylborone salts, derivatives of tetraphenylborone salts Examples thereof include additions of a phosphine compound such as triphenylphosphonium-triphenylborane and N-methylmorpholintetraphenylphosphonium-tetraphenylborate and a tetraphenylborone salt. As the curing accelerator, one type may be used alone, or two or more types may be used in combination.

The content of the curing accelerator is preferably 0.1% by mass to 8% by mass with respect to the total amount of the epoxy resin and the curing agent.

(Ion trap agent)
The sealing composition may further contain an ion trap agent.
The ion trapping agent that can be used in the present disclosure is not particularly limited as long as it is a generally used ion trapping agent in the encapsulant used for manufacturing semiconductor devices, and hydrotalcite and the like are used. Can be mentioned. As the ion trap agent, for example, a compound represented by the following general formula (II-1) or the following general formula (II-2) may be used.

Mg _1-a Al _a (OH) ₂ (CO ₃ ) _{a / 2} · uH ₂ O (II-1)
(In the general formula (II-1), a is 0 <a≤0.5 and u is a positive number.)
BiO _b (OH) _c (NO ₃ ) _d (II-2)
(In the general formula (II-2), b is 0.9 ≦ b ≦ 1.1, c is 0.6 ≦ c ≦ 0.8, and d is 0.2 ≦ d ≦ 0.4.)

Ion trap agents are available as commercial products. As the compound represented by the general formula (II-1), for example, "DHT-4A" (Kyowa Chemical Industry Co., Ltd., trade name) is available as a commercially available product. Further, as a compound represented by the general formula (II-2), for example, "IXE500" (Toagosei Co., Ltd., trade name) is available as a commercially available product.

Examples of ion trapping agents other than the above include hydrous oxides of elements selected from magnesium, aluminum, titanium, zirconium, antimony and the like.
One type of ion trapping agent may be used alone, or two or more types may be used in combination.

When the sealing composition contains an ion trapping agent, the content of the ion trapping agent is 1 part by mass with respect to 100 parts by mass of the epoxy resin in the sealing composition from the viewpoint of realizing sufficient moisture resistance and reliability. The above is preferable. From the viewpoint of fully exerting the effects of the other components, the content of the ion trap agent is preferably 15 parts by mass or less with respect to 100 parts by mass of the epoxy resin in the sealing composition.

The average particle size of the ion trap agent is preferably 0.1 μm to 3.0 μm, and the maximum particle size is preferably 10 μm or less. The average particle size of the ion trap agent can be measured in the same manner as in the case of the inorganic filler.

(Coupling agent)
The sealing composition may further contain a coupling agent. The type of coupling agent is not particularly limited, and known coupling agents can be used. Examples of the coupling agent include a silane coupling agent and a titanium coupling agent. One type of coupling agent may be used alone, or two or more types may be used in combination.

Examples of the silane coupling agent include vinyltrichlorosilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, γ-methacryloxypropyltrimethoxysilane, and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane. , Γ-Glysidoxypropyltrimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ- [bis (β-hydroxyethyl)] aminopropyltriethoxysilane, N -Β- (Aminoethyl) -γ-aminopropyltrimethoxysilane, γ- (β-aminoethyl) aminopropyldimethoxymethylsilane, N- (trimethoxysilylpropyl) ethylenediamine, N- (dimethoxymethylsilylisopropyl) ethylenediamine, Methyltrimethoxysilane, Methyltriethoxysilane, N-β- (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, γ-anilinopropyltrimethoxy Examples thereof include silane (N-phenyl-3-aminopropyltrimethoxysilane), vinyltrimethoxysilane and γ-mercaptopropylmethyldimethoxysilane.

Examples of the titanium coupling agent include isopropyltriisostearoyl titanate, isopropyltris (dioctylpyrophosphate) titanate, isopropyltri (N-aminoethyl-aminoethyl) titanate, tetraoctylbis (ditridecylphosphite) titanate, and tetra (ditridecylphosphite) titanate. 2,2-Diallyloxymethyl-1-butyl) bis (ditridecylphosphite) titanate, bis (dioctylpyrophosphate) oxyacetate titanate, bis (dioctylpyrophosphate) ethylene titanate, isopropyltrioctanoyl titanate, isopropyldimethacrylic iso Examples thereof include stearoyl titanate, isopropyltridodecylbenzenesulfonyl titanate, isopropylisostearoyl diacrylic titanate, isopropyltri (dioctyl phosphate) titanate, isopropyltricylphenyl titanate and tetraisopropylbis (dioctyl phosphate) titanate.

When the sealing composition contains a coupling agent, the content of the coupling agent is preferably 3% by mass or less with respect to the entire sealing composition, and from the viewpoint of exerting the effect, it is 0. It is preferably 1% by mass or more.

(Release agent)
The sealing composition may further contain a release agent. The type of release agent is not particularly limited, and a known release agent can be used. Specific examples thereof include higher fatty acids, higher fatty acid esters, carnauba wax and polyethylene wax. As the release agent, one type may be used alone, or two or more types may be used in combination.
When the sealing composition contains a release agent, the content of the release agent is preferably 10% by mass or less with respect to the total amount of the epoxy resin and the curing agent, and from the viewpoint of exerting the effect. Is preferably 0.5% by mass or more.

(Colorants and modifiers)
The sealing composition may contain a colorant (eg, carbon black). In addition, the sealing composition may contain a modifier (for example, silicone and silicone rubber). As the colorant and the modifier, one type may be used alone, or two or more types may be used in combination.

When conductive particles such as carbon black are used as the colorant, the content of the conductive particles is preferably 1% by mass or less of particles having a particle diameter of 10 μm or more.
When the sealing composition contains conductive particles, the content of the conductive particles is preferably 3% by mass or less with respect to the total amount of the epoxy resin and the curing agent.

<Method for producing sealing composition>
The method for producing the sealing composition is not particularly limited, and a known method can be used. For example, it can be produced by sufficiently mixing a mixture of raw materials in a predetermined blending amount with a mixer or the like, kneading the mixture with a hot roll, an extruder or the like, cooling, pulverizing or the like. The state of the sealing composition is not particularly limited and may be powdery, solid, liquid or the like.

<Semiconductor device>
The semiconductor device of the present disclosure includes a semiconductor element and a cured product of the sealing composition of the present disclosure obtained by sealing the semiconductor element.

The method of sealing the semiconductor element using the sealing composition is not particularly limited, and a known method can be applied. For example, the transfer molding method is generally used, but a compression molding method, an injection molding method, or the like may be used.

The semiconductor device of the present disclosure is suitable as an IC, an LSI (Large-Scale Integration, a large-scale integrated circuit), or the like.

Examples of the present invention will be described below, but the present invention is not limited thereto. The values in the table mean "parts by mass" unless otherwise specified.

(Examples 1 and 2 and Comparative Examples 1 and 2)
After the materials having the formulations shown in Table 1 were premixed (dry blended), they were kneaded with a biaxial roll (roll surface temperature: about 80 ° C.) for about 15 minutes, and cooled and pulverized to produce a powdery sealing composition. ..

The details of the materials in Table 1 are as follows.
(Epoxy resin)
E1: Biphenyl type epoxy resin, epoxy equivalent: 192 g / eq
E2: Bisphenol type epoxy resin, epoxy equivalent: 192 g / eq

(Hardener)
H1: Polyfunctional phenol resin, triphenylmethane type phenol resin with hydroxyl group equivalent of 104 g / eq

(Curing accelerator)
Phosphorus-based curing accelerator (organophosphorus compound)
(Coupling agent)
Anilinosilane (N-Phenyl-3-aminopropyltrimethoxysilane)
(Release agent)
Carnauba wax
(Stress relaxation agent)
Silicone resin (colorant)
Carbon: Carbon black

(Inorganic filler)
-Hard particles HF1: Alumina filler (average particle size: 10 μm)
HF2: Alumina filler (average particle size: 0.7 μm)
-Soft particles SF1: Boehmite (average particle diameter: 1.7 μm, average circularity: 0.95)
-Silica (average particle size: 1.4 μm)

<Evaluation of thermal conductivity>
Using the sealing composition obtained above, a semiconductor element is sealed by a compression molding machine under the conditions of a mold temperature of 175 ° C. to 180 ° C., a molding pressure of 7 MPa, and a curing time of 150 seconds for evaluation of thermal conductivity. Test pieces were prepared. Then, the thermal conductivity of the test piece was measured by the xenon flash (Xe-flash) method. A thermal conductivity of 4.0 W / (m · K) or more was designated as A, and a thermal conductivity of less than 4.0 W / (m · K) was designated as B.

<Evaluation of warpage>
The warp of the sealing composition was evaluated as follows. Specifically, using the sealing composition obtained above, transfer molding was performed under the conditions of a mold temperature of 180 ° C., a molding pressure of 7 MPa, and a curing time of 300 seconds to obtain a package having a size of 40 mm × 40 mm. For this package, the amount of warpage at room temperature (25 ° C.) and the amount of warpage at high temperature (250 ° C.) after heating at 250 ° C. for 30 minutes were measured using a laser displacement meter. Further, both the amount of warpage at room temperature (25 ° C.) and the amount of warpage after high-temperature heating were designated as A when they were 400 μm or less, and B when at least one of them exceeded 400 μm.

As shown in the results in Table 2, the thermal conductivity can be improved by containing hard particles and soft particles as the inorganic filler. It is presumed that this is because when the hard particles come into contact with the soft particles, the soft particles in contact with the hard particles are deformed at the points where the hard particles come into contact, and the hard particles and the soft particles form surface contact. Will be done. Further, since the ratio of the filler of highly elastic alumina can be lowered, it is presumed that the elastic modulus of the cured product is lowered, the strain generated in the cured product is alleviated, and the occurrence of warpage is suppressed.

The disclosure of Japanese Patent Application No. 2017-246587, filed December 22, 2017, is incorporated herein by reference in its entirety.
All documents, patent applications, and technical standards described herein are to the same extent as if the individual documents, patent applications, and technical standards were specifically and individually stated to be incorporated by reference. Incorporated herein by reference.

Claims (5)

A sealing composition containing an epoxy resin, a curing agent, and an inorganic filler containing particles of an inorganic material having a Mohs hardness of 8 or more and particles of an inorganic material having a Mohs hardness of 5 or less. The sealing composition according to claim 1, wherein the particles of the inorganic material having a Mohs hardness of 5 or less have an average circularity of 0.6 or more. The sealing composition according to claim 1 or 2, wherein the proportion of particles of the inorganic material having a Mohs hardness of 5 or less in the inorganic filler is less than 30% by mass. The sealing composition according to any one of claims 1 to 3, wherein the content of the inorganic filler is 88% by volume or less. A semiconductor device comprising a semiconductor element and a cured product of the sealing composition according to any one of claims 1 to 4, wherein the semiconductor element is sealed.