KR20200092990A - Sealing composition and semiconductor device - Google Patents
Sealing composition and semiconductor device Download PDFInfo
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- KR20200092990A KR20200092990A KR1020207017750A KR20207017750A KR20200092990A KR 20200092990 A KR20200092990 A KR 20200092990A KR 1020207017750 A KR1020207017750 A KR 1020207017750A KR 20207017750 A KR20207017750 A KR 20207017750A KR 20200092990 A KR20200092990 A KR 20200092990A
- Authority
- KR
- South Korea
- Prior art keywords
- sealing composition
- particles
- mass
- less
- inorganic filler
- Prior art date
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- 238000007789 sealing Methods 0.000 title claims abstract description 65
- 239000000203 mixture Substances 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000002245 particle Substances 0.000 claims abstract description 86
- 239000011256 inorganic filler Substances 0.000 claims abstract description 37
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 37
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 34
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- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 17
- 239000011147 inorganic material Substances 0.000 claims abstract description 17
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- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- XFFPIAQRIDTSIZ-UHFFFAOYSA-N n'-[3-(dimethoxymethylsilyl)propyl]ethane-1,2-diamine Chemical compound COC(OC)[SiH2]CCCNCCN XFFPIAQRIDTSIZ-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- UIXPTCZPFCVOQF-UHFFFAOYSA-N ubiquinone-0 Chemical compound COC1=C(OC)C(=O)C(C)=CC1=O UIXPTCZPFCVOQF-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Sealing Material Composition (AREA)
Abstract
밀봉 조성물은, 에폭시 수지와, 경화제와, 모스 경도가 8 이상인 무기 재료의 입자 및 모스 경도가 5 이하인 무기 재료의 입자를 포함하는 무기 충전재를 함유한다.The sealing composition contains an epoxy resin, a curing agent, and an inorganic filler containing particles of an inorganic material having a Mohs hardness of 8 or more and particles of an inorganic material having a Mohs hardness of 5 or less.
Description
본 발명은 밀봉 조성물 및 반도체 장치에 관한 것이다.The present invention relates to a sealing composition and a semiconductor device.
근년, 반도체 패키지의 소형화 및 고집적화에 수반하여, 반도체 패키지 내부의 발열이 염려되고 있다. 발열에 의해, 반도체 패키지를 갖는 전기 부품 또는 전자 부품의 성능 저하가 발생할 우려가 있다. 그 때문에, 반도체 패키지에 사용되는 부재에는, 높은 열전도성이 요구되고 있다. 예를 들어, 반도체 패키지의 밀봉재를 고열전도화할 것이 요구되고 있다.In recent years, with the miniaturization and high integration of the semiconductor package, heat generation inside the semiconductor package is concerned. Due to heat generation, there is a fear that performance deterioration of an electrical component or an electronic component having a semiconductor package occurs. Therefore, high thermal conductivity is required for the member used for the semiconductor package. For example, it is desired to make the sealing material of a semiconductor package highly heat-conductive.
밀봉재를 고열전도화하는 방법의 하나로서, 밀봉재에 포함되는 무기 충전재로서, 실리카 및 고열전도성 필러인 알루미나를 사용하는 방법을 들 수 있다(예를 들어, 특허문헌 1 참조).As one of the methods for making the sealing material highly heat-conducting, a method of using silica and alumina, which is a high-heat-conducting filler, is used as an inorganic filler contained in the sealing material (for example, see Patent Document 1).
또한, 반도체 패키지를 밀봉재에 의해 밀봉하는 경우, 밀봉 후의 휨이 문제가 되는 경우가 있다. 이 문제는, 넓은 면적에서 일괄 밀봉이 되는 컴프레션 몰드 성형의 경우에 현저해지기 쉽다. 그 이외에도, 밀봉 후의 반도체 패키지가 여러가지 열 이력을 받은 때에, 반도체 패키지의 휨 거동이 바뀌어버리는 경우가 있다. 그 결과, 타 공정에서의 반도체 패키지의 핸들링이 곤란해져버린다는 우려가 존재한다.Moreover, when sealing a semiconductor package with a sealing material, warping after sealing may become a problem in some cases. This problem tends to become prominent in the case of compression mold molding, which is a bulk sealing in a large area. In addition to this, when the semiconductor package after sealing receives various thermal histories, the bending behavior of the semiconductor package may change. As a result, there is a concern that handling of the semiconductor package in other processes becomes difficult.
특허문헌 1에 기재된 방법에서는, 알루미나와 비교하여 열전도율이 낮은 실리카가 무기 충전재의 일부로서 사용되는 점에서, 충분한 열전도성이 얻어지지 않는 경우가 있다.In the method described in Patent Literature 1, sufficient thermal conductivity may not be obtained because silica having a lower thermal conductivity than that of alumina is used as part of the inorganic filler.
또한, 실리카 및 알루미나는 모두 경질의 필러인 점에서, 경화물의 탄성률이 상승하기 쉽다. 경화물의 탄성률이 상승함으로써, 밀봉 후의 반도체 패키지에, 타 공정에서의 핸들링이 곤란해질 만큼의 휨이 발생하는 경우가 있다.In addition, since both silica and alumina are hard fillers, the elastic modulus of the cured product tends to increase. When the elastic modulus of the cured product rises, warpage may occur in the semiconductor package after sealing, such that handling in other processes becomes difficult.
본 발명의 일 형태는, 상기 종래의 사정을 감안하여 이루어진 것이며, 높은 열전도성을 갖고, 휨의 발생이 억제되는 밀봉 조성물 및 그것을 사용한 반도체 장치를 제공하는 것을 목적으로 한다.One aspect of the present invention is made in view of the above-mentioned conventional circumstances, and has an object to provide a sealing composition having high thermal conductivity and suppressing the occurrence of warpage and a semiconductor device using the same.
상기 과제를 달성하기 위한 구체적 수단은 이하와 같다.Specific means for achieving the above object are as follows.
<1> 에폭시 수지와, 경화제와, 모스 경도가 8 이상인 무기 재료의 입자 및 모스 경도가 5 이하인 무기 재료의 입자를 포함하는 무기 충전재를 함유하는 밀봉 조성물.<1> A sealing composition containing an epoxy filler, a curing agent, and an inorganic filler containing particles of an inorganic material having a Mohs hardness of 8 or more and particles of an inorganic material having a Mohs hardness of 5 or less.
<2> 상기 모스 경도가 5 이하인 무기 재료의 입자의 평균 원형도가 0.6 이상인 <1>에 기재된 밀봉 조성물.<2> The sealing composition according to <1>, wherein the average circularity of the particles of the inorganic material having a Mohs hardness of 5 or less is 0.6 or more.
<3> 상기 무기 충전재에서 차지하는 상기 모스 경도가 5 이하인 무기 재료의 입자 비율이 30질량% 미만인 <1> 또는 <2>에 기재된 밀봉 조성물.<3> The sealing composition according to <1> or <2>, wherein a particle ratio of the inorganic material having a Mohs hardness of 5 or less in the inorganic filler is less than 30% by mass.
<4> 상기 무기 충전재의 함유율이 88체적% 이하인 <1> 내지 <3> 중 어느 한 항에 기재된 밀봉 조성물.<4> The sealing composition according to any one of <1> to <3>, wherein the content of the inorganic filler is 88 vol% or less.
<5> 반도체 소자와, 상기 반도체 소자를 밀봉하여 이루어지는 <1> 내지 <4> 중 어느 한 항에 기재된 밀봉 조성물의 경화물을 포함하는 반도체 장치.<5> A semiconductor device comprising a semiconductor element and a cured product of the sealing composition according to any one of <1> to <4>, which is formed by sealing the semiconductor element.
본 발명의 일 형태에 의하면, 높은 열전도성을 갖고, 휨의 발생이 억제되는 밀봉 조성물 및 그것을 사용한 반도체 장치를 제공할 수 있다.According to one aspect of the present invention, it is possible to provide a sealing composition having high thermal conductivity and suppressing occurrence of warpage and a semiconductor device using the same.
이하, 본 발명의 밀봉 조성물 및 반도체 장치를 실시하기 위한 형태에 대하여 상세하게 설명한다. 단, 본 발명은 이하의 실시 형태에 한정되는 것은 아니다. 이하의 실시 형태에 있어서, 그의 구성 요소(요소 스텝 등도 포함한다)는 특별히 명시한 경우를 제외하고, 필수는 아니다. 수치 및 그의 범위에 대해서도 마찬가지이며, 본 발명을 제한하는 것은 아니다.EMBODIMENT OF THE INVENTION Hereinafter, the form for implementing the sealing composition of this invention and a semiconductor device is demonstrated in detail. However, the present invention is not limited to the following embodiments. In the following embodiments, the components (including element steps and the like) are not essential except where specifically indicated. The same applies to numerical values and ranges thereof, and does not limit the present invention.
본 개시에 있어서 「내지」를 사용하여 나타난 수치 범위에는, 「내지」의 전후에 기재되는 수치가 각각 최솟값 및 최대값으로서 포함된다.In the numerical range shown by using "to" in this disclosure, the numerical values described before and after "to" are included as the minimum value and the maximum value, respectively.
본 개시 중에 단계적으로 기재되어 있는 수치 범위에 있어서, 하나의 수치 범위로 기재된 상한값 또는 하한값은, 다른 단계적인 기재의 수치 범위의 상한값 또는 하한값으로 치환해도 된다. 또한, 본 개시 중에 기재되어 있는 수치 범위에 있어서, 그 수치 범위의 상한값 또는 하한값은, 실시예에 나타나 있는 값으로 치환해도 된다.In the numerical ranges described in stages during the present disclosure, the upper or lower limit values described in one numerical range may be substituted with the upper or lower limit values of the numerical ranges in another stepwise description. In addition, in the numerical range described during this disclosure, the upper limit value or the lower limit value of the numerical range may be substituted with the values shown in the examples.
본 개시에 있어서 각 성분은 해당하는 물질을 복수종 포함하고 있어도 된다. 조성물 중에 각 성분에 해당하는 물질이 복수종 존재하는 경우, 각 성분의 함유율 또는 함유량은, 특별히 언급하지 않는 한, 조성물 중에 존재하는 당해 복수종의 물질의 합계 함유율 또는 함유량을 의미한다.In the present disclosure, each component may contain a plurality of substances. When a plurality of substances corresponding to each component are present in the composition, the content or content of each component means the total content or content of the plurality of substances present in the composition, unless otherwise specified.
본 개시에 있어서 각 성분에 해당하는 입자는 복수종 포함하고 있어도 된다. 조성물 중에 각 성분에 해당하는 입자가 복수종 존재하는 경우, 각 성분의 입자경은, 특별히 언급하지 않는 한, 조성물 중에 존재하는 당해 복수종의 입자의 혼합물에 관한 값을 의미한다.In this disclosure, the particle|grains corresponding to each component may contain multiple types. When a plurality of particles corresponding to each component are present in the composition, the particle diameter of each component means a value relating to a mixture of the plurality of particles present in the composition, unless otherwise specified.
<밀봉 조성물><Sealing composition>
본 개시의 밀봉 조성물은, 에폭시 수지와, 경화제와, 모스 경도가 8 이상인 무기 재료(이하, 「경질 재료」라고 칭하는 경우가 있다.)의 입자(이하, 「경질 입자」라고 칭하는 경우가 있다.) 및 모스 경도가 5 이하인 무기 재료(이하, 「연질 재료」라고 칭하는 경우가 있다.)의 입자(이하, 「연질 입자」라고 칭하는 경우가 있다.)를 포함하는 무기 충전재를 함유한다.The sealing composition of the present disclosure may be referred to as "hard particles" (hereinafter, referred to as "hard particles") of an epoxy resin, a curing agent, and an inorganic material having a Mohs hardness of 8 or more (hereinafter sometimes referred to as "hard material"). ) And an inorganic filler containing particles of an inorganic material having a Mohs hardness of 5 or less (hereinafter sometimes referred to as "soft material") (hereinafter sometimes referred to as "soft particle").
본 개시의 밀봉 조성물은, 높은 열전도성을 갖고, 휨의 발생이 억제된다. 그 이유는 명확하지 않지만, 이하와 같이 추정된다.The sealing composition of the present disclosure has high thermal conductivity and suppression of warpage is suppressed. Although the reason is not clear, it estimates as follows.
밀봉 조성물에는, 무기 충전재로서 경질 입자 및 연질 입자가 함유된다. 밀봉 조성물의 경화물 중에 있어서, 경질 입자끼리가 접하는 경우, 당해 입자가 경질이기 때문에 경질 입자끼리의 접촉은 입자 표면에서의 점 접촉이 된다. 한편, 밀봉 조성물의 경화물 중에 있어서, 경질 입자와 연질 입자가 접촉하는 경우, 경질 입자와 접촉한 연질 입자가 경질 입자와 접촉하는 개소에서 변형되어, 경질 입자와 연질 입자는 면 접촉이 되기 쉽다. 입자끼리가 점 접촉의 상태인 경우와 비교하여, 입자끼리가 면 접촉하는 상태인 쪽이 무기 충전재 간에서 형성되는 열전도 경로가 넓어지기 쉽다. 그 때문에, 무기 충전재로서 경질 입자 및 연질 입자가 함유되는 본 개시의 밀봉 조성물은, 높은 열전도성을 가질 것으로 추정된다.The sealing composition contains hard particles and soft particles as an inorganic filler. In the hardened|cured material of a sealing composition, when hard particles come into contact, since the said particle is hard, the contact between hard particles becomes point contact on the particle surface. On the other hand, in the hardened|cured material of a sealing composition, when a hard particle and a soft particle contact, the soft particle which contacted the hard particle is deformed at the place which contacts a hard particle, and it is easy to make surface contact between a hard particle and a soft particle. Compared to the case where the particles are in a point contact state, the heat conduction path formed between the inorganic fillers tends to be wider when the particles are in a surface contact state. Therefore, it is presumed that the sealing composition of the present disclosure containing hard particles and soft particles as an inorganic filler has high thermal conductivity.
또한, 무기 충전재로서 경질 입자만을 함유하는 경우와 비교하여, 경질 입자와 함께 연질 입자를 무기 충전재로서 포함하는 본 개시의 밀봉 조성물에서는, 경화물의 탄성률이 저하된다. 그 때문에, 경화물 내에서 발생한 변형이 완화되기 쉬워, 휨의 발생이 억제될 것으로 추정된다.Moreover, compared with the case where only the hard particles are contained as the inorganic filler, in the sealing composition of the present disclosure comprising soft particles as the inorganic filler together with the hard particles, the elastic modulus of the cured product is lowered. Therefore, it is presumed that the strain generated in the cured product is likely to be alleviated, and the occurrence of warpage is suppressed.
이하, 밀봉 조성물을 구성하는 각 성분에 대하여 설명한다. 본 개시의 밀봉 조성물은, 에폭시 수지와, 경화제와, 무기 충전재를 함유하고, 필요에 따라 그 밖의 성분을 함유해도 된다.Hereinafter, each component constituting the sealing composition will be described. The sealing composition of the present disclosure may contain an epoxy resin, a curing agent, and an inorganic filler, and may contain other components as necessary.
-에폭시 수지--Epoxy resin-
밀봉 조성물은, 에폭시 수지를 함유한다. 에폭시 수지의 종류는 특별히 한정되지 않고 공지된 에폭시 수지를 사용할 수 있다.The sealing composition contains an epoxy resin. The type of the epoxy resin is not particularly limited, and a known epoxy resin can be used.
구체적으로는, 예를 들어, 페놀 화합물(예를 들어, 페놀, 크레졸, 크실레놀, 레조르신, 카테콜, 비스페놀 A 및 비스페놀 F) 그리고 나프톨 화합물(예를 들어, α-나프톨, β-나프톨 및 디히드록시나프탈렌)로 이루어지는 군에서 선택되는 적어도 1종과, 알데히드 화합물(예를 들어, 포름알데히드, 아세트알데히드, 프로피온알데히드, 벤즈알데히드 및 살리실알데히드)을 산성 촉매 하에서 축합 또는 공축합시켜서 얻어지는 노볼락 수지를 에폭시화한 것(예를 들어, 페놀노볼락형 에폭시 수지 및 오르토크레졸노볼락형 에폭시 수지); 비스페놀(예를 들어, 비스페놀 A, 비스페놀 AD, 비스페놀 F 및 비스페놀 S) 및 비페놀(예를 들어, 알킬 치환 또는 비치환된 비페놀)로 이루어지는 군에서 선택되는 적어도 1종의 디글리시딜에테르; 페놀·아르알킬 수지의 에폭시화물; 페놀 화합물과 디시클로펜타디엔 및 테르펜 화합물로 이루어지는 군에서 선택되는 적어도 1종과의 부가물 또는 중부가물의 에폭시화물; 다염기산(예를 들어, 프탈산 및 다이머산)과 에피클로로히드린의 반응에 의해 얻어지는 글리시딜에스테르형 에폭시 수지; 폴리아민(예를 들어, 디아미노디페닐메탄 및 이소시아누르산)과 에피클로로히드린의 반응에 의해 얻어지는 글리시딜아민형 에폭시 수지; 올레핀 결합을 과산(예를 들어, 과아세트산)으로 산화하여 얻어지는 선상 지방족 에폭시 수지; 그리고 지환족 에폭시 수지를 들 수 있다. 에폭시 수지는 1종류를 단독으로 사용해도 되고, 2종류 이상을 병용해도 된다.Specifically, for example, phenol compounds (eg, phenol, cresol, xylenol, resorcin, catechol, bisphenol A and bisphenol F) and naphthol compounds (eg α-naphthol, β-naphthol And dihydroxynaphthalene), a furnace obtained by condensation or co-condensation of at least one member selected from the group consisting of aldehyde compounds (for example, formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde and salicylaldehyde) under an acidic catalyst. Epoxidation of the volak resin (for example, phenol novolak type epoxy resin and orthocresol novolak type epoxy resin); At least one diglycidyl ether selected from the group consisting of bisphenols (eg, bisphenol A, bisphenol AD, bisphenol F and bisphenol S) and biphenols (eg, alkyl substituted or unsubstituted biphenols). ; Epoxides of phenol-aralkyl resins; Epoxides of adducts or polyadditions of at least one member selected from the group consisting of phenolic compounds and dicyclopentadiene and terpene compounds; Glycidyl ester type epoxy resins obtained by reaction of polybasic acids (eg, phthalic acid and dimer acid) with epichlorohydrin; Glycidylamine-type epoxy resins obtained by reaction of polyamines (eg, diaminodiphenylmethane and isocyanuric acid) with epichlorohydrin; Linear aliphatic epoxy resins obtained by oxidizing olefin bonds with peracids (eg, peracetic acid); And an alicyclic epoxy resin is mentioned. Epoxy resins may be used alone or in combination of two or more.
집적 회로(Integrated Circuit, IC) 등의 소자 상의 알루미늄 배선 또는 구리 배선의 부식 방지의 관점에서, 에폭시 수지의 순도는 높은 편이 바람직하고, 가수분해성 염소량은 적은 편이 바람직하다. 밀봉 조성물의 내습성의 향상의 관점에서는, 가수분해성 염소량은 질량 기준으로 500ppm 이하인 것이 바람직하다.From the viewpoint of corrosion prevention of aluminum wiring or copper wiring on an element such as an integrated circuit (IC), the purity of the epoxy resin is preferably high, and the amount of hydrolyzable chlorine is preferably low. From the viewpoint of improving the moisture resistance of the sealing composition, the amount of hydrolyzable chlorine is preferably 500 ppm or less based on mass.
여기서, 가수분해성 염소량은, 시료의 에폭시 수지 1g을 디옥산 30mL에 용해하고, 1N-KOH 메탄올 용액 5mL를 첨가하여 30분간 리플럭스한 후, 전위차 적정에 의해 구한 값이다.Here, the amount of hydrolyzable chlorine is a value obtained by dissolving 1 g of the epoxy resin in the sample in 30 mL of dioxane, adding 5 mL of 1N-KOH methanol solution and refluxing for 30 minutes, followed by potentiometric titration.
밀봉 조성물에서 차지하는 에폭시 수지의 함유율은, 1.5질량% 내지 20질량%인 것이 바람직하고, 2.0질량% 내지 15질량%인 것이 보다 바람직하고, 3.0질량% 내지 10질량%인 것이 더욱 바람직하다.The content of the epoxy resin occupied by the sealing composition is preferably 1.5% by mass to 20% by mass, more preferably 2.0% by mass to 15% by mass, and even more preferably 3.0% by mass to 10% by mass.
무기 충전재를 제외하는 밀봉 조성물에서 차지하는 에폭시 수지의 함유율은, 30질량% 내지 65질량%인 것이 바람직하고, 35질량% 내지 60질량%인 것이 보다 바람직하고, 40질량% 내지 55질량%인 것이 더욱 바람직하다.The content of the epoxy resin in the sealing composition excluding the inorganic filler is preferably 30% by mass to 65% by mass, more preferably 35% by mass to 60% by mass, and even more preferably 40% by mass to 55% by mass desirable.
-경화제--Hardener-
밀봉 조성물은 경화제를 함유한다. 경화제의 종류는 특별히 한정되지 않고 공지된 경화제를 사용할 수 있다.The sealing composition contains a curing agent. The type of curing agent is not particularly limited, and a known curing agent can be used.
구체적으로는, 예를 들어, 페놀 화합물(예를 들어, 페놀, 크레졸, 레조르신, 카테콜, 비스페놀 A 및 비스페놀 F) 그리고 나프톨 화합물(예를 들어, α-나프톨, β-나프톨 및 디히드록시나프탈렌)로 이루어지는 군에서 선택되는 적어도 1종과, 알데히드 화합물(예를 들어, 포름알데히드, 아세트알데히드, 프로피온알데히드, 벤즈알데히드 및 살리실알데히드)을 산성 촉매 하에서 축합 또는 공축합시켜서 얻어지는 노볼락 수지; 페놀·아르알킬 수지; 비페닐·아르알킬 수지; 트리페닐메탄형 페놀 수지; 그리고 나프톨·아르알킬 수지;를 들 수 있다. 경화제는, 1종류를 단독으로 사용해도 되고, 2종류 이상을 병용해도 된다.Specifically, for example, phenolic compounds (eg, phenol, cresol, resorcin, catechol, bisphenol A and bisphenol F) and naphthol compounds (eg α-naphthol, β-naphthol and dihydroxy Naphthalene) and a novolac resin obtained by condensation or co-condensation of at least one selected from the group consisting of aldehyde compounds (for example, formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde and salicylaldehyde) under an acidic catalyst; Phenol aralkyl resins; Biphenyl aralkyl resin; Triphenylmethane type phenol resin; And naphthol aralkyl resins. One type of curing agent may be used alone, or two or more types may be used in combination.
경화제의 관능기(예를 들어, 노볼락 수지의 경우에는 페놀성 수산기)의 당량이 에폭시 수지의 에폭시기 1 당량에 대하여 0.5 당량 내지 1.5 당량이 되도록, 경화제가 배합되는 것이 바람직하고, 특히, 0.7 당량 내지 1.2 당량이 되도록 경화제가 배합되는 것이 바람직하다.It is preferable that the curing agent is blended so that the equivalent of the functional group of the curing agent (for example, phenolic hydroxyl group in the case of novolac resin) is 0.5 to 1.5 equivalents based on 1 equivalent of the epoxy group of the epoxy resin, particularly, 0.7 equivalents to It is preferable that the curing agent is blended to have 1.2 equivalents.
-무기 충전재--Inorganic filler-
밀봉 조성물은, 모스 경도가 8 이상인 무기 재료의 입자 및 모스 경도가 5 이하인 무기 재료의 입자를 포함하는 무기 충전재를 함유한다. 밀봉 조성물이 무기 충전재를 포함함으로써, 밀봉 조성물의 흡습성이 저감되고, 경화 상태에서의 강도가 향상되는 경향이 있다.The sealing composition contains an inorganic filler containing particles of an inorganic material having a Mohs hardness of 8 or more and particles of an inorganic material having a Mohs hardness of 5 or less. When the sealing composition contains an inorganic filler, the hygroscopicity of the sealing composition is reduced, and the strength in the cured state tends to be improved.
무기 충전재의 함유율로서는, 흡습성, 선팽창 계수의 저감, 강도 향상 및 땜납 내열성의 관점에서, 밀봉 조성물 전체에 대하여 60체적% 이상인 것이 바람직하고, 65체적% 이상인 것이 보다 바람직하고, 70체적% 이상인 것이 더욱 바람직하다. 무기 충전재의 함유율은, 88체적% 이하인 것이 바람직하고, 85체적% 이하인 것이 보다 바람직하다.The content of the inorganic filler is preferably 60% by volume or more, more preferably 65% by volume or more, and more preferably 70% by volume or more, from the viewpoint of hygroscopicity, reduction in coefficient of linear expansion, strength improvement and solder heat resistance. desirable. The content of the inorganic filler is preferably 88% by volume or less, and more preferably 85% by volume or less.
경질 재료로서는, 알루미나(모스 경도: 9), 질화알루미늄, 탄화규소, 다이아몬드 등을 들 수 있다. 이들 중에서도, 열전도성, 유동성 및 신뢰성의 관점에서, 알루미나가 바람직하다. 경질 재료의 모스 경도는 8 이상이며, 9 이상인 것이 바람직하다. 경질 재료의 모스 경도는, 10 이하여도 된다.Examples of the hard material include alumina (Mohs hardness: 9), aluminum nitride, silicon carbide, and diamond. Among these, alumina is preferred from the viewpoints of thermal conductivity, fluidity and reliability. The hard material has a Mohs hardness of 8 or more, and preferably 9 or more. The Mohs hardness of a hard material may be 10 or less.
경질 입자의 평균 입자경으로서는, 0.1㎛ 내지 80㎛인 것이 바람직하고, 0.3㎛ 내지 50㎛인 것이 보다 바람직하고, 1㎛ 내지 40㎛인 것이 더욱 바람직하다.The average particle diameter of the hard particles is preferably 0.1 μm to 80 μm, more preferably 0.3 μm to 50 μm, and even more preferably 1 μm to 40 μm.
무기 충전재의 평균 입자경은, 이하의 방법에 의해 측정할 수 있다.The average particle diameter of the inorganic filler can be measured by the following method.
용매(순수)에, 측정 대상의 무기 충전재를 0.01질량% 내지 0.05질량%의 범위 내에서 첨가하고, 110W의 초음파 세정기로 1분 내지 5분 진동하고, 무기 충전재를 분산한다. 분산액의 약 10mL 정도를 측정 셀에 주입하여 25℃에서 측정한다. 측정 장치는, 레이저 회절/산란식 입자경 분포 측정 장치(예를 들어, 가부시키가이샤 호리바 세이사꾸쇼, LA920(상품명))를 사용하여, 체적 기준의 입도 분포를 측정한다. 평균 입자경은, 체적 기준의 입도 분포에 있어서 소경측으로부터의 누적이 50%가 될 때의 입자경(D50%)으로서 구해진다.To the solvent (pure water), the inorganic filler to be measured is added within a range of 0.01% by mass to 0.05% by mass, vibrated for 1 minute to 5 minutes with a 110W ultrasonic cleaner, and the inorganic filler is dispersed. About 10 mL of the dispersion is injected into the measuring cell and measured at 25°C. The measurement device uses a laser diffraction/scattering type particle size distribution measuring device (for example, Horiba Seisakusho, LA920 (trade name)) to measure the particle size distribution based on volume. The average particle diameter is determined as the particle diameter (D50%) when the accumulation from the small diameter side becomes 50% in the volume-based particle size distribution.
무기 충전재에서 차지하는 경질 입자의 비율은, 50질량% 이상인 것이 바람직하고, 60질량% 이상인 것이 보다 바람직하고, 70질량% 이상인 것이 더욱 바람직하다. 무기 충전재에서 차지하는 경질 입자의 비율은, 95질량% 이하여도 된다.The proportion of the hard particles in the inorganic filler is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more. The proportion of the hard particles in the inorganic filler may be 95% by mass or less.
경질 입자의 평균 원형도는, 0.80 이상인 것이 바람직하고, 0.85 이상인 것이 보다 바람직하고, 0.90 이상인 것이 더욱 바람직하다.The average circularity of the hard particles is preferably 0.80 or more, more preferably 0.85 or more, and even more preferably 0.90 or more.
무기 충전재의 원형도란, 무기 충전재의 투영 면적과 동일한 면적을 갖는 원의 직경인 원 상당 직경으로부터 산출되는 원으로서의 둘레 길이를, 무기 충전재의 투영상으로부터 측정되는 둘레 길이(윤곽선의 길이)로 제산하여 얻어지는 수치이며, 하기 식으로 구해진다. 또한, 원형도는 진원에서는 1.00이 된다.The circularity of the inorganic filler is calculated by dividing the circumferential length as a circle calculated from the circle equivalent diameter, which is the diameter of a circle having the same area as the projection area of the inorganic filler, by the circumferential length (the length of the outline) measured from the projection image of the inorganic filler. It is a numerical value obtained and is calculated|required by the following formula. In addition, the circularity is 1.00 in the true circle.
원형도=(상당 원의 둘레 길이)/(입자 단면상의 둘레 길이)Roundness = (circumferential length of equivalent circle)/(circumferential length on particle cross section)
구체적으로 평균 원형도는, 주사형 전자 현미경으로 배율 1000배로 확대한 화상을 관찰하고, 임의로 10개의 무기 충전재를 선택하고, 상기 방법으로 개개의 무기 충전재의 원형도를 측정하고, 그의 산술 평균값으로서 산출되는 값이다. 부언하면, 원형도, 상당 원의 둘레 길이 및 입자의 투영상의 둘레 길이는, 시판되고 있는 화상 해석 소프트웨어에 의해 구하는 것이 가능하다.Specifically, the average circularity is observed by an image magnified at a magnification of 1000 times with a scanning electron microscope, arbitrarily selecting 10 inorganic fillers, measuring the circularity of each inorganic filler by the above method, and calculating it as an arithmetic mean value thereof Is the value. Incidentally, the circularity, the circumferential length of the equivalent circle, and the circumferential length of the projected image of the particle can be obtained by commercially available image analysis software.
연질 재료로서는, 베마이트(모스 경도: 3.5 내지 4), 돌로마이트, 마이카, 육방정 질화붕소 등을 들 수 있다. 이들 중에서도, 유동성의 관점에서, 베마이트 및 돌로마이트가 바람직하다.Examples of the soft material include boehmite (Mohs hardness: 3.5 to 4), dolomite, mica, hexagonal boron nitride, and the like. Among these, boehmite and dolomite are preferred from the viewpoint of fluidity.
연질 재료의 모스 경도는 5 이하이고, 4 이하인 것이 바람직하다. 연질 재료의 모스 경도는, 2 이상이어도 된다.The Mohs hardness of the soft material is preferably 5 or less, and 4 or less. The Mohs hardness of the soft material may be two or more.
연질 입자의 평균 입자경으로서는, 0.1㎛ 내지 20㎛인 것이 바람직하고, 0.3㎛ 내지 10㎛인 것이 보다 바람직하고, 0.5㎛ 내지 5㎛인 것이 더욱 바람직하다.The average particle diameter of the soft particles is preferably 0.1 μm to 20 μm, more preferably 0.3 μm to 10 μm, and even more preferably 0.5 μm to 5 μm.
무기 충전재에서 차지하는 연질 입자의 비율은, 30질량% 미만인 것이 바람직하고, 20질량% 이하인 것이 보다 바람직하고, 10질량% 이하인 것이 더욱 바람직하다. 무기 충전재에서 차지하는 연질 입자의 비율은, 5질량% 이상이어도 된다.The proportion of soft particles in the inorganic filler is preferably less than 30% by mass, more preferably 20% by mass or less, and even more preferably 10% by mass or less. The proportion of the soft particles in the inorganic filler may be 5% by mass or more.
연질 입자의 평균 원형도는, 0.6 이상인 것이 바람직하고, 0.7 이상인 것이 보다 바람직하고, 0.8 이상인 것이 더욱 바람직하다.The average circularity of the soft particles is preferably 0.6 or more, more preferably 0.7 or more, and even more preferably 0.8 or more.
무기 충전재는, 경질 입자 및 연질 입자 이외의, 모스 경도가 5 초과 8 미만인 기타의 무기 재료의 입자를 포함해도 된다. 기타의 무기 재료로서는, 실리카(모스 경도: 7), 산화마그네슘, 산화아연 등을 들 수 있다.The inorganic filler may contain particles of other inorganic materials having a Mohs hardness of more than 5 and less than 8, other than hard particles and soft particles. Examples of other inorganic materials include silica (Mohs hardness: 7), magnesium oxide, and zinc oxide.
무기 충전재에서 차지하는 기타의 무기 재료의 입자 비율은, 10질량% 이하여도 되고, 1질량% 이하여도 된다.The particle ratio of other inorganic materials occupied by the inorganic filler may be 10% by mass or less, or 1% by mass or less.
(경화 촉진제)(Curing accelerator)
밀봉 조성물은, 경화 촉진제를 더 함유해도 된다. 경화 촉진제의 종류는 특별히 제한되지 않고, 공지된 경화 촉진제를 사용할 수 있다.The sealing composition may further contain a curing accelerator. The type of curing accelerator is not particularly limited, and a known curing accelerator can be used.
구체적으로는, 1,8-디아자-비시클로[5.4.0]운데센-7,1,5-디아자-비시클로[4.3.0]노넨, 5,6-디부틸아미노-1,8-디아자-비시클로[5.4.0]운데센-7 등의 시클로아미딘 화합물; 시클로아미딘 화합물에 무수 말레산, 1,4-벤조퀴논, 2,5-톨루퀴논, 1,4-나프토퀴논, 2,3-디메틸벤조퀴논, 2,6-디메틸벤조퀴논, 2,3-디메톡시-5-메틸-1,4-벤조퀴논, 2,3-디메톡시-1,4-벤조퀴논, 페닐-1,4-벤조퀴논 등의 퀴논 화합물, 디아조페닐메탄, 페놀 수지 등의 π 결합을 갖는 화합물을 부가하여 이루어지는 분자 내 분극을 갖는 화합물; 벤질디메틸아민, 트리에탄올아민, 디메틸아미노 에탄올, 트리스(디메틸아미노메틸)페놀 등의 3급 아민 화합물, 3급 아민 화합물의 유도체; 2-메틸이미다졸, 2-페닐이미다졸, 2-페닐-4-메틸이미다졸 등의 이미다졸 화합물, 이미다졸 화합물의 유도체; 트리부틸포스핀, 메틸디페닐포스핀, 트리페닐포스핀, 트리스(4-메틸페닐)포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀 화합물; 유기 포스핀 화합물에 무수 말레산, 상기 퀴논 화합물, 디아조페닐메탄, 페놀 수지 등의 π 결합을 갖는 화합물을 부가하여 이루어지는 분자 내 분극을 갖는 인 화합물; 테트라페닐포스포늄테트라페닐보레이트, 트리페닐포스핀테트라페닐보레이트, 2-에틸-4-메틸이미다졸테트라페닐보레이트, N-메틸모르폴린테트라페닐보레이트 등의 테트라페닐보론염, 테트라페닐보론염의 유도체; 트리페닐포스포늄-트리페닐보란, N-메틸모르폴린테트라페닐포스포늄-테트라페닐보레이트 등의 포스핀 화합물과 테트라페닐보론염의 부가물 등을 들 수 있다. 경화 촉진제는, 1종류를 단독으로 사용해도 되고, 2종류 이상을 병용해도 된다.Specifically, 1,8-diaza-bicyclo[5.4.0]undecene-7,1,5-diaza-bicyclo[4.3.0]nonene, 5,6-dibutylamino-1,8 Cycloamidine compounds such as -diaza-bicyclo[5.4.0]undecene-7; Maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3 to cycloamidine compound -Quinone compounds such as dimethoxy-5-methyl-1,4-benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, phenyl-1,4-benzoquinone, diazophenylmethane, phenol resin, etc. A compound having an intramolecular polarization formed by adding a compound having a π bond of; Tertiary amine compounds such as benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; derivatives of tertiary amine compounds; Imidazole compounds such as 2-methylimidazole, 2-phenylimidazole and 2-phenyl-4-methylimidazole, and derivatives of imidazole compounds; Organic phosphine compounds such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris(4-methylphenyl)phosphine, diphenylphosphine, and phenylphosphine; A phosphorus compound having an intramolecular polarization formed by adding a compound having a π bond such as maleic anhydride, the quinone compound, diazophenylmethane, or phenol resin to the organic phosphine compound; Tetraphenylboronate salts such as tetraphenylphosphoniumtetraphenylborate, triphenylphosphinetetraphenylborate, 2-ethyl-4-methylimidazoletetraphenylborate, and N-methylmorpholinetetraphenylborate, and derivatives of tetraphenylboron salt ; And phosphine compounds such as triphenylphosphonium-triphenylborane and N-methylmorpholinetetraphenylphosphonium-tetraphenylborate, and adducts of tetraphenylborone salts. The curing accelerator may be used alone or in combination of two or more.
경화 촉진제의 함유율은, 에폭시 수지와 경화제의 합계량에 대하여 0.1질량% 내지 8질량%인 것이 바람직하다.It is preferable that content rate of a hardening accelerator is 0.1 mass%-8 mass% with respect to the total amount of an epoxy resin and a hardening agent.
(이온 트랩제)(Ion trap agent)
밀봉 조성물은, 이온 트랩제를 더 함유해도 된다.The sealing composition may further contain an ion trap agent.
본 개시에 있어서 사용 가능한 이온 트랩제는, 반도체 장치의 제조 용도에 사용되는 밀봉재에 있어서, 일반적으로 사용되고 있는 이온 트랩제라면 특별히 제한되는 것은 아니고, 하이드로탈사이트 등을 들 수 있다. 이온 트랩제로서는, 예를 들어, 하기 일반식 (II-1) 또는 하기 일반식 (II-2)로 표시되는 화합물을 사용해도 된다.The ion trap agent that can be used in the present disclosure is not particularly limited as long as it is an ion trap agent that is generally used in the sealing material used for the production use of semiconductor devices, and hydrotalcite. As an ion trap agent, you may use the compound represented by the following general formula (II-1) or the following general formula (II-2), for example.
Mg1-aAla(OH)2(CO3)a/2·uH2O (II-1)Mg 1-a Al a (OH) 2 (CO 3 ) a/2 uH 2 O (II-1)
(일반식 (II-1) 중, a는 0<a≤0.5이며, u는 양수이다.)(In general formula (II-1), a is 0<a≤0.5, and u is a positive number.)
BiOb(OH)c(NO3)d (II-2)BiO b (OH) c (NO 3 ) d (II-2)
(일반식 (II-2) 중, b는 0.9≤b≤1.1, c는 0.6≤c≤0.8, d는 0.2≤d≤0.4이다.)(In the general formula (II-2), b is 0.9≤b≤1.1, c is 0.6≤c≤0.8, and d is 0.2≤d≤0.4.)
이온 트랩제는, 시판품으로서 입수 가능하다. 일반식 (II-1)로 표시되는 화합물로서는, 예를 들어, 「DHT-4A」(교와 가가꾸 고교 가부시키가이샤, 상품명)를 시판품으로서 입수 가능하다. 또한, 일반식 (II-2)로 표시되는 화합물로서는, 예를 들어, 「IXE500」(도아 고세 가부시키가이샤, 상품명)을 시판품으로서 입수 가능하다.The ion trap agent is available as a commercial product. As a compound represented by general formula (II-1), for example, "DHT-4A" (Kyowa Kagaku Kogyo Co., Ltd., a brand name) can be obtained as a commercial item. Moreover, as a compound represented by general formula (II-2), "IXE500" (Doase Kose Co., Ltd., brand name) can be obtained as a commercial item, for example.
또한, 상기 이외의 이온 트랩제로서, 마그네슘, 알루미늄, 티타늄, 지르코늄, 안티몬 등으로부터 선택되는 원소의 함수 산화물 등을 들 수 있다.In addition, as the ion trapping agent other than the above, hydrous oxides of elements selected from magnesium, aluminum, titanium, zirconium, antimony, and the like can be mentioned.
이온 트랩제는, 1종류를 단독으로 사용해도 되고, 2종류 이상을 병용해도 된다.The ion trapping agent may be used alone or in combination of two or more.
밀봉 조성물이 이온 트랩제를 함유하는 경우, 이온 트랩제의 함유량은, 충분한 내습 신뢰성을 실현하는 관점에서는, 밀봉 조성물 중의 에폭시 수지 100질량부에 대하여 1질량부 이상인 것이 바람직하다. 다른 성분의 효과를 충분히 발휘하는 관점에서는, 이온 트랩제의 함유량은, 밀봉 조성물 중의 에폭시 수지 100질량부에 대하여 15질량부 이하인 것이 바람직하다.When the sealing composition contains an ion trap agent, the content of the ion trap agent is preferably 1 part by mass or more with respect to 100 parts by mass of the epoxy resin in the sealing composition from the viewpoint of realizing sufficient moisture proof reliability. From the viewpoint of sufficiently exerting the effects of other components, the content of the ion trap agent is preferably 15 parts by mass or less with respect to 100 parts by mass of the epoxy resin in the sealing composition.
또한, 이온 트랩제의 평균 입자경은 0.1㎛ 내지 3.0㎛인 것이 바람직하고, 최대 입자경은 10㎛ 이하인 것이 바람직하다. 이온 트랩제의 평균 입자경은, 무기 충전재의 경우와 마찬가지로 하여 측정할 수 있다.Moreover, it is preferable that the average particle diameter of an ion trap agent is 0.1 micrometer-3.0 micrometers, and it is preferable that the maximum particle diameter is 10 micrometers or less. The average particle diameter of the ion trap agent can be measured in the same manner as in the case of the inorganic filler.
(커플링제)(Coupling agent)
밀봉 조성물은, 커플링제를 더 함유해도 된다. 커플링제의 종류는, 특별히 제한되지 않고, 공지된 커플링제를 사용할 수 있다. 커플링제로서는, 예를 들어, 실란 커플링제 및 티타늄 커플링제를 들 수 있다. 커플링제는, 1종류를 단독으로 사용해도 되고, 2종류 이상을 병용해도 된다.The sealing composition may further contain a coupling agent. The type of the coupling agent is not particularly limited, and a known coupling agent can be used. As a coupling agent, a silane coupling agent and a titanium coupling agent are mentioned, for example. The coupling agent may be used alone or in combination of two or more.
실란 커플링제로서는, 예를 들어, 비닐트리클로로실란, 비닐트리에톡시실란, 비닐트리스(β-메톡시에톡시)실란, γ-메타크릴옥시프로필트리메톡시실란, β-(3,4-에폭시시클로헥실)에틸트리메톡시실란, γ-글리시독시프로필트리메톡시실란, 비닐트리아세톡시실란, γ-머캅토프로필트리메톡시실란, γ-아미노프로필트리에톡시실란, γ-[비스(β-히드록시에틸)]아미노프로필트리에톡시실란, N-β-(아미노에틸)-γ-아미노프로필트리메톡시실란, γ-(β-아미노에틸)아미노프로필디메톡시메틸실란, N-(트리메톡시실릴프로필)에틸렌디아민, N-(디메톡시메틸실릴이소프로필)에틸렌디아민, 메틸트리메톡시실란, 메틸트리에톡시실란, N-β-(N-비닐벤질아미노에틸)-γ-아미노프로필트리메톡시실란, γ-클로로프로필트리메톡시실란, 헥사메틸디실란, γ-아닐리노프로필트리메톡시실란(N-페닐-3-아미노프로필트리메톡시실란), 비닐트리메톡시실란 및 γ-머캅토프로필메틸디메톡시실란을 들 수 있다.Examples of the silane coupling agent include vinyl trichlorosilane, vinyl triethoxysilane, vinyl tris(β-methoxyethoxy)silane, γ-methacryloxypropyl trimethoxysilane, β-(3,4- Epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-[bis (β-hydroxyethyl)]aminopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, γ-(β-aminoethyl)aminopropyldimethoxymethylsilane, N- (Trimethoxysilylpropyl)ethylenediamine, N-(dimethoxymethylsilylisopropyl)ethylenediamine, methyltrimethoxysilane, methyltriethoxysilane, N-β-(N-vinylbenzylaminoethyl)-γ- Aminopropyl trimethoxysilane, γ-chloropropyl trimethoxysilane, hexamethyldisilane, γ-anilinopropyl trimethoxysilane (N-phenyl-3-aminopropyl trimethoxysilane), vinyl trimethoxysilane And γ-mercaptopropylmethyldimethoxysilane.
티타늄 커플링제로서는, 예를 들어, 이소프로필트리이소스테아로일티타네이트, 이소프로필트리스(디옥틸파이로포스페이트)티타네이트, 이소프로필트리(N-아미노에틸-아미노에틸)티타네이트, 테트라옥틸비스(디트리데실포스파이트)티타네이트, 테트라(2,2-디알릴옥시메틸-1-부틸)비스(디트리데실포스파이트)티타네이트, 비스(디옥틸파이로포스페이트)옥시아세테이트티타네이트, 비스(디옥틸파이로포스페이트)에틸렌티타네이트, 이소프로필트리옥타노일티타네이트, 이소프로필디메타크릴이소스테아로일티타네이트, 이소프로필트리도데실벤젠술포닐티타네이트, 이소프로필이소스테아로일디아크릴티타네이트, 이소프로필트리(디옥틸포스페이트)티타네이트, 이소프로필트리쿠밀페닐티타네이트 및 테트라이소프로필비스(디옥틸포스파이트)티타네이트를 들 수 있다.As a titanium coupling agent, for example, isopropyl triisostearoyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate, isopropyl tri (N-aminoethyl-aminoethyl) titanate, tetraoctylbis (Ditridecylphosphite) titanate, tetra(2,2-diallyloxymethyl-1-butyl)bis(ditridecylphosphite) titanate, bis(dioctylpyrophosphate)oxyacetate titanate, bis (Dioctyl pyrophosphate) ethylene titanate, isopropyl trioctanoyl titanate, isopropyl dimethacryl isostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl isostearoyl di Acrylic titanate, isopropyl tri(dioctyl phosphate) titanate, isopropyl tricumylphenyl titanate and tetraisopropyl bis (dioctyl phosphite) titanate.
밀봉 조성물이 커플링제를 함유하는 경우, 커플링제의 함유율은, 밀봉 조성물의 전체에 대하여 3질량% 이하인 것이 바람직하고, 그의 효과를 발휘시키는 관점에서는, 0.1질량% 이상인 것이 바람직하다.When the sealing composition contains a coupling agent, the content of the coupling agent is preferably 3% by mass or less with respect to the entire sealing composition, and from the viewpoint of exerting its effect, it is preferably 0.1% by mass or more.
(이형제)(Release agent)
밀봉 조성물은, 이형제를 더 함유해도 된다. 이형제의 종류는 특별히 제한되지 않고, 공지된 이형제를 사용할 수 있다. 구체적으로는, 예를 들어, 고급 지방산, 고급 지방산에스테르, 카르나우바 왁스 및 폴리에틸렌계 왁스를 들 수 있다. 이형제는, 1종류를 단독으로 사용해도 되고, 2종류 이상을 병용해도 된다.The sealing composition may further contain a release agent. The type of the release agent is not particularly limited, and a known release agent can be used. Specifically, higher fatty acids, higher fatty acid esters, carnauba wax, and polyethylene-based waxes are exemplified. The mold release agent may be used alone or in combination of two or more.
밀봉 조성물이 이형제를 함유하는 경우, 이형제의 함유율은, 에폭시 수지와 경화제의 합계량에 대하여 10질량% 이하인 것이 바람직하고, 그의 효과를 발휘시키는 관점에서는, 0.5질량% 이상인 것이 바람직하다.When the sealing composition contains a mold release agent, the content ratio of the mold release agent is preferably 10% by mass or less with respect to the total amount of the epoxy resin and the curing agent, and from the viewpoint of exerting its effect, it is preferably 0.5% by mass or more.
(착색제 및 개질제)(Colorants and modifiers)
밀봉 조성물은, 착색제(예를 들어, 카본 블랙)를 함유해도 된다. 또한, 밀봉 조성물은, 개질제(예를 들어, 실리콘 및 실리콘 고무)를 함유해도 된다. 착색제 및 개질제는, 각각, 1종류를 단독으로 사용해도 되고, 2종류 이상을 병용해도 된다.The sealing composition may contain a coloring agent (for example, carbon black). Moreover, the sealing composition may contain a modifier (for example, silicone and silicone rubber). The colorant and the modifier may be used alone or in combination of two or more.
착색제로서 카본 블랙 등의 도전성 입자를 사용하는 경우, 도전성 입자는, 입자경 10㎛ 이상의 입자 함유율이 1질량% 이하인 것이 바람직하다.When using electroconductive particles, such as carbon black, as a coloring agent, it is preferable that electroconductive particle has a particle content of 10 micrometers or more in particle diameter of 1 mass% or less.
밀봉 조성물이 도전성 입자를 함유하는 경우, 도전성 입자의 함유율은, 에폭시 수지와 경화제의 합계량에 대하여 3질량% 이하인 것이 바람직하다.When the sealing composition contains conductive particles, the content of the conductive particles is preferably 3% by mass or less with respect to the total amount of the epoxy resin and the curing agent.
<밀봉 조성물의 제작 방법><Production method of sealing composition>
밀봉 조성물의 제작 방법은 특별히 제한되지 않고, 공지된 방법에 의해 행할 수 있다. 예를 들어, 소정의 배합량의 원재료의 혼합물을 믹서 등에 의해 충분히 혼합한 후, 열 롤, 압출기 등에 의해 혼련하고, 냉각, 분쇄 등의 처리를 거침으로써 제작할 수 있다. 밀봉 조성물의 상태는 특별히 제한되지 않고, 분말상, 고체상, 액체상 등이면 된다.The method for producing the sealing composition is not particularly limited and can be performed by a known method. For example, it can be produced by sufficiently mixing a mixture of raw materials of a predetermined compounding amount with a mixer or the like, kneading it with a heat roll, an extruder, or the like, and undergoing treatments such as cooling and grinding. The state of the sealing composition is not particularly limited, and may be a powder, solid, liquid, or the like.
<반도체 장치><Semiconductor device>
본 개시의 반도체 장치는, 반도체 소자와, 상기 반도체 소자를 밀봉하여 이루어지는 본 개시의 밀봉 조성물의 경화물을 포함한다.The semiconductor device of the present disclosure includes a semiconductor element and a cured product of the sealing composition of the present disclosure formed by sealing the semiconductor element.
밀봉 조성물을 사용하여 반도체 소자를 밀봉하는 방법은 특별히 한정되지 않고 공지된 방법을 적용하는 것이 가능하다. 예를 들어, 트랜스퍼 몰드법이 일반적이지만, 컴프레션 몰드법, 인젝션 성형법 등을 사용해도 된다.The method of sealing a semiconductor element using a sealing composition is not particularly limited, and a known method can be applied. For example, the transfer mold method is common, but a compression mold method, an injection molding method, or the like may be used.
본 개시의 반도체 장치는, IC, LSI(Large-Scale Integration, 대규모 집적 회로) 등으로서 적합하다.The semiconductor device of the present disclosure is suitable as an IC, large-scale integration (LSI), or a large-scale integrated circuit.
실시예Example
이하에 본 발명의 실시예에 대하여 설명하지만, 본 발명은 이것에 한정되는 것은 아니다. 또한, 표 중의 수치는 특별히 언급하지 않는 한 「질량부」를 의미한다.Examples of the present invention will be described below, but the present invention is not limited to these. In addition, the numerical values in a table mean "parts by mass", unless otherwise specified.
(실시예 1 내지 2 및 비교예 1 내지 2)(Examples 1 to 2 and Comparative Examples 1 to 2)
표 1에 나타내는 배합의 재료를 예비 혼합(드라이 블렌드)한 후, 2축 롤(롤 표면 온도: 약 80℃)로 약 15분간 혼련하고, 냉각 분쇄하여 분말상의 밀봉 조성물을 제조하였다.After pre-mixing (dry blending) the materials of the formulation shown in Table 1, kneading with a biaxial roll (roll surface temperature: about 80° C.) for about 15 minutes, followed by cooling and grinding to prepare a powdery sealing composition.
표 1 중의 재료의 상세는, 각각 이하와 같다.The details of the materials in Table 1 are as follows, respectively.
(에폭시 수지)(Epoxy resin)
E1: 비페닐형 에폭시 수지, 에폭시 당량: 192g/eqE1: biphenyl type epoxy resin, epoxy equivalent: 192 g/eq
E2: 비스페놀형 에폭시 수지, 에폭시 당량: 192g/eqE2: bisphenol-type epoxy resin, epoxy equivalent: 192 g/eq
(경화제)(Curing agent)
H1: 다관능 페놀 수지, 수산기 당량이 104g/eq인 트리페닐메탄형 페놀 수지H1: polyfunctional phenolic resin, triphenylmethane type phenolic resin having a hydroxyl group equivalent of 104 g/eq
(경화 촉진제)(Curing accelerator)
인계 경화 촉진제(유기인 화합물)Phosphorus hardening accelerator (organic compound)
(커플링제)(Coupling agent)
아닐리노실란(N-페닐-3-아미노프로필트리메톡시실란)Anilinosilane (N-phenyl-3-aminopropyltrimethoxysilane)
(이형제)(Release agent)
카르나우바 왁스Carnauba wax
(응력 완화제)(Stress reliever)
실리콘 수지Silicone resin
(착색제)(coloring agent)
카본: 카본 블랙Carbon: carbon black
(무기 충전재)(Weapon filler)
·경질 입자·Hard particles
HF1: 알루미나 필러(평균 입자경: 10㎛)HF1: Alumina filler (average particle diameter: 10 µm)
HF2: 알루미나 필러(평균 입자경: 0.7㎛)HF2: Alumina filler (average particle diameter: 0.7 µm)
·연질 입자·Soft particles
SF1: 베마이트(평균 입자경: 1.7㎛, 평균 원형도: 0.95)SF1: Boehmite (average particle diameter: 1.7 µm, average circularity: 0.95)
·실리카(평균 입자경: 1.4㎛)Silica (average particle diameter: 1.4㎛)
<열전도율의 평가><Evaluation of thermal conductivity>
상기에서 얻어진 밀봉 조성물을 사용하여, 압축 성형기에 의해, 금형 온도 175℃ 내지 180℃, 성형 압력 7MPa, 경화 시간 150초의 조건에서 반도체 소자를 밀봉하여 열전도율 평가용의 시험편을 제작하였다. 이어서, 시험편의 열전도율을 크세논 플래시(Xe-flash)법에 의해 측정하였다. 열전도율 4.0W/(m·K) 이상을 A라 하고, 4.0W/(m·K) 미만을 B라 하였다.Using the sealing composition obtained above, a semiconductor element was sealed under a condition of a mold temperature of 175°C to 180°C, a molding pressure of 7 MPa, and a curing time of 150 seconds by a compression molding machine to prepare a test piece for evaluating thermal conductivity. Next, the thermal conductivity of the test piece was measured by the xenon flash (Xe-flash) method. The thermal conductivity of 4.0 W/(m·K) or higher was referred to as A, and less than 4.0 W/(m·K) was referred to as B.
<휨의 평가><Evaluation of warpage>
밀봉 조성물의 휨 평가는, 하기에 의해 행하였다. 구체적으로는, 상기에서 얻어진 밀봉 조성물을 사용하여, 금형 온도 180℃, 성형 압력 7MPa, 경화 시간 300초간의 조건에서 트랜스퍼 성형을 행하고, 40㎜×40㎜의 패키지를 얻었다. 이 패키지에 대해서, 레이저 변위계를 사용하여 실온(25℃)에서의 휨량 및 250℃에서 30분 가열 후, 고온(250℃)에서의 휨량을 측정하였다. 또한, 실온(25℃)에서의 휨량 및 고온 가열 후의 휨량이, 모두 400㎛ 이하를 A라 하고, 적어도 한쪽이 400㎛를 초과한 경우를 B라 하였다.The bending evaluation of the sealing composition was performed as follows. Specifically, using the sealing composition obtained above, transfer molding was performed under conditions of a mold temperature of 180°C, a molding pressure of 7 MPa, and a curing time of 300 seconds to obtain a package of 40 mm x 40 mm. About this package, the amount of warpage at room temperature (25 degreeC) and the amount of warpage at high temperature (250 degreeC) were measured after heating at 250 degreeC for 30 minutes using a laser displacement meter. In addition, the amount of warpage at room temperature (25°C) and the amount of warpage after high-temperature heating were all referred to as A of 400 µm or less, and B when at least one of them exceeded 400 µm.
표 2의 결과에 나타낸 바와 같이, 무기 충전재로서 경질 입자 및 연질 입자가 함유됨으로써 열전도율을 향상시킬 수 있다. 이것은, 경질 입자와 연질 입자가 접촉하는 경우, 경질 입자와 접촉한 연질 입자가 경질 입자와 접촉하는 개소에서 변형되어, 경질 입자와 연질 입자가 면 접촉을 형성하고 있기 때문이라고 추정된다. 또한 고탄성 알루미나의 충전재 비율을 저하시킬 수 있기 때문에, 경화물의 탄성률이 저하되어서 경화물 내에서 발생한 변형이 완화되어, 휨의 발생이 억제되는 것으로 추정된다.As shown in the results in Table 2, the thermal conductivity can be improved by containing hard particles and soft particles as the inorganic filler. This is presumed to be because, when the hard particles and the soft particles are in contact, the soft particles in contact with the hard particles are deformed at places where the hard particles are in contact, and the hard particles and the soft particles form surface contacts. In addition, since the proportion of the filler of the high-elasticity alumina can be lowered, it is estimated that the elastic modulus of the cured product is lowered, the deformation generated in the cured product is relaxed, and the occurrence of warpage is suppressed.
2017년 12월 22일에 출원된 일본 특허 출원 2017-246587호의 개시는, 그의 전체가 참조에 의해 본 명세서에 도입된다.As for the indication of the Japanese patent application 2017-246587 for which it applied on December 22, 2017, the whole is taken in into this specification by reference.
본 명세서에 기재된 모든 문헌, 특허 출원, 및 기술 규격은, 개개의 문헌, 특허 출원, 및 기술 규격이 참조에 의해 도입되는 것이 구체적이고 또한 개별적으로 기재된 경우와 동일 정도로, 본 명세서 중에 참조에 의해 도입된다.All documents, patent applications, and technical specifications described in this specification are incorporated by reference in the present specification to the same extent as when individual documents, patent applications, and technical specifications are specifically and individually described by reference. do.
Claims (5)
Applications Claiming Priority (3)
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JPJP-P-2017-246587 | 2017-12-22 | ||
JP2017246587 | 2017-12-22 | ||
PCT/JP2018/046611 WO2019124391A1 (en) | 2017-12-22 | 2018-12-18 | Sealing composition and semiconductor device |
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JP (1) | JP7238789B2 (en) |
KR (1) | KR20200092990A (en) |
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JP4188634B2 (en) | 2001-07-30 | 2008-11-26 | スミトモ ベークライト シンガポール プライベート リミテッド | Epoxy resin composition |
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JPH03273039A (en) * | 1990-03-20 | 1991-12-04 | Toyo Ink Mfg Co Ltd | Sealing material with high thermal conductivity |
JP2918328B2 (en) * | 1990-11-26 | 1999-07-12 | 株式会社デンソー | Method for selecting resin and resin-encapsulated semiconductor device having resin selected by this method |
WO2011065372A1 (en) * | 2009-11-25 | 2011-06-03 | パナソニック電工株式会社 | Laminate plate, use therefor, and production method thereof |
JP5598190B2 (en) * | 2010-09-09 | 2014-10-01 | 住友ベークライト株式会社 | Thermosetting resin composition for circuit board |
JP2013122003A (en) * | 2011-12-09 | 2013-06-20 | Sato Research Co Ltd | Heat conductive filler and manufacturing method thereof |
DE112012005505T5 (en) * | 2011-12-27 | 2015-06-18 | Panasonic Intellectual Property Management Co., Ltd. | Thermally conductive resin composition |
US9944787B2 (en) * | 2012-03-30 | 2018-04-17 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, prepreg and laminate |
JP2014129485A (en) * | 2012-12-28 | 2014-07-10 | Hitachi Chemical Co Ltd | Epoxy resin composition and electronic component device |
JP6414799B2 (en) * | 2013-01-15 | 2018-10-31 | 三菱瓦斯化学株式会社 | Resin composition, prepreg, laminate, metal foil clad laminate and printed wiring board |
JPWO2014208694A1 (en) * | 2013-06-27 | 2017-02-23 | 日立化成株式会社 | Resin composition, resin sheet, cured resin sheet, resin sheet structure, cured resin sheet structure, method for producing cured resin sheet structure, semiconductor device, and LED device |
JP6584752B2 (en) * | 2014-06-12 | 2019-10-02 | 日東電工株式会社 | Resin sheet for sealing |
JP2016079304A (en) * | 2014-10-17 | 2016-05-16 | 日立化成株式会社 | Resin sheet, resin sheet cured product, resin sheet laminate, resin sheet laminate cured product and method for producing the same, semiconductor device, and led device |
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JP4188634B2 (en) | 2001-07-30 | 2008-11-26 | スミトモ ベークライト シンガポール プライベート リミテッド | Epoxy resin composition |
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WO2019124391A1 (en) | 2019-06-27 |
CN111566162A (en) | 2020-08-21 |
JPWO2019124391A1 (en) | 2021-01-14 |
TWI791075B (en) | 2023-02-01 |
JP7238789B2 (en) | 2023-03-14 |
TW201932531A (en) | 2019-08-16 |
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