JPWO2019111479A1 - Resist stripper - Google Patents
Resist stripper Download PDFInfo
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- JPWO2019111479A1 JPWO2019111479A1 JP2019558014A JP2019558014A JPWO2019111479A1 JP WO2019111479 A1 JPWO2019111479 A1 JP WO2019111479A1 JP 2019558014 A JP2019558014 A JP 2019558014A JP 2019558014 A JP2019558014 A JP 2019558014A JP WO2019111479 A1 JPWO2019111479 A1 JP WO2019111479A1
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- resist
- stripping solution
- cellosolve
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
Abstract
微細な配線間のレジストの除去が容易な技術を提供するための、カリウム塩およびセロソルブを含有することを特徴とするレジストの剥離液、およびレジストが施された基材を前記レジストの剥離液で処理することを特徴とするレジストの除去方法。A resist stripping solution containing a potassium salt and a cellosolve, and a resist-coated substrate with the resist stripping solution to provide a technique for facilitating the removal of resist between fine wires. A method for removing a resist, which comprises processing.
Description
本発明は、レジストが施された基材からレジストを剥離することができるレジストの剥離液に関する。 The present invention relates to a resist stripping solution capable of stripping a resist from a resisted substrate.
プリント配線板の製造、主にセミアディティブ法で用いられるドライフィルムレジスト等のレジストの剥離液には微細配線化に伴いアミン系の剥離液が用いられている。 Amine-based stripping liquid is used as the stripping liquid for resists such as dry film resists used in the manufacture of printed wiring boards, mainly in the semi-additive method, as the wiring becomes finer.
しかしながら、従来のアミン系のレジストの剥離液は、難廃液処理性、海外での法規制の問題があり、その使用が避けられつつある。 However, the conventional amine-based resist stripping solution has problems of intractable waste liquid treatability and laws and regulations overseas, and its use is being avoided.
近年、アミン系のレジストの剥離液の問題点を回避するために、水酸化ナトリウムとセロソルブを含有する剥離液も報告されているが（特許文献１）、剥離時のレジストが細かく粉砕されないため、近年の微細な配線間のレジストの除去が困難という問題点がある。 In recent years, in order to avoid the problem of the stripping solution of amine-based resist, a stripping solution containing sodium hydroxide and cellosolve has been reported (Patent Document 1), but the resist at the time of stripping is not finely pulverized. There is a problem that it is difficult to remove the resist between fine wirings in recent years.
従って、本発明は微細な配線間のレジストの除去が容易な技術を提供することを課題とする。 Therefore, an object of the present invention is to provide a technique for easily removing a resist between fine wirings.
本発明者らは上記課題を解決するために鋭意研究した結果、カリウム塩およびセロソルブを含有する溶液が、特許文献１にあるような水酸化ナトリウムおよびセロソルブを含有する溶液と比べて顕著に微細な配線間のレジストでも細かく粉砕できることを見出し、本発明を完成させた。 As a result of diligent research to solve the above problems, the present inventors have found that the solution containing potassium salt and cellosolve is remarkably finer than the solution containing sodium hydroxide and cellosolve as described in Patent Document 1. We have found that even a resist between wirings can be finely crushed, and completed the present invention.
すなわち、本発明は、カリウム塩およびセロソルブを含有することを特徴とするレジストの剥離液である。 That is, the present invention is a resist stripping solution containing a potassium salt and a cellosolve.
また、本発明は、レジストが施された基材を、上記レジストの剥離液で処理することを特徴とするレジストの除去方法である。 Further, the present invention is a method for removing a resist, which comprises treating a base material to which a resist has been applied with a stripping solution for the resist.
更に、本発明は、カリウム塩を含有する第１液と、セロソルブを含有する第２液とを含むことを特徴とするレジストの剥離液キットである。 Furthermore, the present invention is a resist stripping solution kit, which comprises a first solution containing a potassium salt and a second solution containing cellosolve.
また更に、本発明はレジストが施された基材からレジストを除去する工程を含むプリント配線板、半導体基板、フラットパネルディスプレイまたはリードフレームの製造方法において、レジストの除去を上記レジストの剥離液を用いて行うことを特徴とするプリント配線板、半導体基板、フラットパネルディスプレイまたはリードフレームの製造方法である。 Furthermore, the present invention uses the resist stripping solution to remove the resist in a method for manufacturing a printed wiring board, a semiconductor substrate, a flat panel display or a lead frame, which comprises a step of removing the resist from the resisted substrate. This is a method for manufacturing a printed wiring board, a semiconductor substrate, a flat panel display, or a lead frame.
本発明のレジストの剥離液は、微細な配線間のレジストでも細かく粉砕できる。 The resist stripping solution of the present invention can be finely pulverized even with a resist between fine wirings.
そのため、本発明のレジストの剥離液はレジストが施された基材からレジストを除去する工程を含むプリント配線板、半導体基板、フラットパネルディスプレイまたはリードフレームの製造方法に好適である。 Therefore, the resist stripping solution of the present invention is suitable for a method for manufacturing a printed wiring board, a semiconductor substrate, a flat panel display, or a lead frame, which includes a step of removing the resist from the resisted substrate.
本発明のレジストの剥離液（以下、「本発明剥離液」という）は、水酸化カリウムおよびセロソルブを含有するものである。 The resist stripping solution of the present invention (hereinafter referred to as "the present invention stripping solution") contains potassium hydroxide and cellosolve.
本発明剥離液におけるカリウム塩は特に限定されないが、例えば、水酸化カリウム、炭酸カリウム等が挙げられる。なお、カリウム塩には、後記するケイ酸塩に該当するケイ酸カリウムは含まれない。これらの中でも水酸化カリウムが好ましい。また、本発明剥離液におけるカリウム塩の含有量は特に限定されないが、例えば、０．７５ｍｏｌ／Ｌ以下が好ましく、０．６５ｍｏｌ／Ｌ以下がより好ましく、０．５５ｍｏｌ／Ｌ以下が特に好ましい。 The potassium salt in the stripping solution of the present invention is not particularly limited, and examples thereof include potassium hydroxide and potassium carbonate. The potassium salt does not include potassium silicate, which corresponds to the silicate described later. Of these, potassium hydroxide is preferable. The content of the potassium salt in the stripping solution of the present invention is not particularly limited, but for example, it is preferably 0.75 mol / L or less, more preferably 0.65 mol / L or less, and particularly preferably 0.55 mol / L or less.
本発明剥離液に用いられるセロソルブは、エチレングリコールのエーテル類をさすものであり、例えば、イソプロピルセロソルブ、ブチルセロソルブ、ジメチルセロソルブ、フェニルブチルセロソルブ、メチルセロソルブ、エチルセロソルブ、フェニルセロソルブ、ベンジルセロソルブ、カルビドールセロソルブ、ジエチルセロソルブ等が挙げられる。これらの中でもイソプロピルセロソルブが好ましい。また、これらセロソルブは１種または２種以上を組み合わせて用いることができる。本発明剥離液におけるセロソルブの含有量は特に限定されないが、例えば、０．００５〜０．２ｍｏｌ／Ｌが好ましく、０．０１〜０．１ｍｏｌ／Ｌがより好ましく、０．０１〜０．０５ｍｏｌ／Ｌが特に好ましい。 The cellosolve used in the stripping solution of the present invention refers to ethylene glycol ethers, for example, isopropyl cellosolve, butyl cellosolve, dimethyl cellosolve, phenylbutyl cellosolve, methyl cellosolve, ethyl cellosolve, phenyl cellosolve, benzyl cellosolve, carbidol cellosolve, Examples thereof include diethyl cellosolve. Of these, isopropyl cellosolve is preferable. In addition, these cellosolves can be used alone or in combination of two or more. The content of cellosolve in the stripping solution of the present invention is not particularly limited, but is preferably 0.005 to 0.2 mol / L, more preferably 0.01 to 0.1 mol / L, and 0.01 to 0.05 mol / L, for example. L is particularly preferable.
本発明剥離液には、金属へのアタック性を抑制するために、更にケイ酸塩を含有させることが好ましい。ケイ酸塩は特に限定されないが、例えば、ケイ酸カリウム、ケイ酸ナトリウム等が挙げられる。これらの中でもケイ酸カリウムが好ましい。本発明剥離液におけるケイ酸塩の含有量は特に限定されないが、例えば、０．００２〜０．１５ｍｏｌ／Ｌが好ましく、０．００６〜０．１ｍｏｌ／Ｌがより好ましく、０．０３〜０．０６５ｍｏｌ／Ｌが特に好ましい。 The stripping solution of the present invention preferably further contains a silicate in order to suppress the attack property on the metal. The silicate is not particularly limited, and examples thereof include potassium silicate and sodium silicate. Of these, potassium silicate is preferable. The content of the silicate in the stripping solution of the present invention is not particularly limited, but for example, 0.002 to 0.15 mol / L is preferable, 0.006 to 0.1 mol / L is more preferable, and 0.03 to 0. 065 mol / L is particularly preferable.
なお、本発明剥離液には、上記成分のみで構成されることが好ましいが、本発明の効果を阻害しない限り、例えば、ポリオキシアルキレンアルキルエーテル系やシリコン系の消泡剤等のその他の成分を含有させてもよい。 The stripping solution of the present invention is preferably composed of only the above components, but other components such as a polyoxyalkylene alkyl ether-based or silicon-based defoaming agent are not required as long as the effects of the present invention are not impaired. May be contained.
以上説明した本発明剥離液は上記成分を水に溶解することにより調製できる。なお、本発明剥離液のｐＨはアルカリ性であれば特に限定されないが、通常、上記成分を水に溶解しただけでアルカリ性となるため、特にｐＨの調整は必要ない。また、本発明剥離液は、上記成分をそれぞれ分けて予め水に溶解させ、レジストの剥離液キットとし、これらを混合することで調製してもよい。具体的には、カリウム塩を含有する第１液と、セロソルブを含有する第２液とを含むことを特徴とするレジストの剥離液キットや、これに更にケイ酸塩を含有する第３液を含むレジストの剥離液キットや、更に、これに上記その他の成分を適宜各液に含有させたレジストの剥離液キット等が挙げられる。 The stripping solution of the present invention described above can be prepared by dissolving the above components in water. The pH of the stripping solution of the present invention is not particularly limited as long as it is alkaline, but it is usually not necessary to adjust the pH because it becomes alkaline only by dissolving the above components in water. Further, the stripping solution of the present invention may be prepared by separately dissolving the above components in water in advance to prepare a resist stripping solution kit and mixing them. Specifically, a resist stripping solution kit containing a first solution containing a potassium salt and a second solution containing cellosolve, and a third solution further containing a silicate. Examples thereof include a resist stripping liquid kit containing the resist, and a resist stripping liquid kit in which the above-mentioned other components are appropriately contained in each liquid.
本発明剥離液を用いてレジストが施された基材を処理することにより、レジストが細かく粉砕され、レジストを除去することができる。 By treating the resisted base material with the stripping solution of the present invention, the resist can be finely pulverized and the resist can be removed.
レジストが施された基材を、本発明剥離液で処理する条件は特に限定されないが、例えば、１０〜８０℃にした本発明剥離液に、基材を１〜６０分間程度浸漬する条件や、１０〜８０℃にした本発明剥離液を基材に１〜６０分間程度噴霧する条件が挙げられる。なお、浸漬の際には、基材を揺動したり、本発明剥離液に超音波をかけてもよい。 The conditions for treating the resisted substrate with the stripping solution of the present invention are not particularly limited, but for example, the conditions for immersing the substrate in the stripping solution of the present invention at 10 to 80 ° C. for about 1 to 60 minutes, or Conditions include spraying the stripping solution of the present invention at 10 to 80 ° C. on the substrate for about 1 to 60 minutes. At the time of immersion, the base material may be shaken or ultrasonic waves may be applied to the stripping solution of the present invention.
レジストの種類は、特に限定されず、例えば、ドライフィルムレジスト、液体レジスト等の何れでもよい。ドライフィルムレジストの種類も特に限定されないが、例えば、アルカリ可溶タイプのものが好ましい。このようなアルカリ可溶タイプのドライフィルムレジストとしては、例えば、ＲＤ−１２２５（ＳＡＰ用２５μｍ厚）（日立化成株式会社製）等が挙げられる。 The type of resist is not particularly limited, and may be, for example, a dry film resist, a liquid resist, or the like. The type of the dry film resist is not particularly limited, but for example, an alkali-soluble type is preferable. Examples of such an alkali-soluble type dry film resist include RD-1225 (25 μm thickness for SAP) (manufactured by Hitachi Kasei Co., Ltd.) and the like.
レジストが施される基材は、特に限定されないが、例えば、プリント配線板、半導体基板、フラットパネルディスプレイ、リードフレームに用いられる各種金属や合金で形成された、薄膜、基板、部品等が挙げられる。 The base material to which the resist is applied is not particularly limited, and examples thereof include a thin film, a substrate, and a component made of various metals and alloys used for a printed wiring board, a semiconductor substrate, a flat panel display, and a lead frame. ..
上記のようにして本発明剥離液は、レジストが施された基材からレジストを除去することができるため、このようなレジストを除去する工程を含むプリント配線板、半導体基板、フラットパネルディスプレイ、リードフレーム等の製造方法に用いることができる。 Since the stripping solution of the present invention can remove the resist from the resisted substrate as described above, the printed wiring board, the semiconductor substrate, the flat panel display, and the lead including the step of removing the resist. It can be used for manufacturing methods such as frames.
上記製造方法の中でもレジストが施された基材からレジストを除去する工程を含むプリント配線板の製造方法が好ましく、特にセミアディティブ法によるプリント配線板の製造方法が好ましい。本発明剥離液が除去できるライン／スペース（Ｌ／Ｓ）は、特に限定されないが、例えば、５０／５０μｍ以下のもの、好ましくは１０／１０〜４０／４０μｍのものでもレジストの除去が可能である。 Among the above manufacturing methods, a method for manufacturing a printed wiring board including a step of removing the resist from the resisted base material is preferable, and a method for manufacturing a printed wiring board by a semi-additive method is particularly preferable. The line / space (L / S) from which the release liquid of the present invention can be removed is not particularly limited, but for example, a resist can be removed even if it is 50/50 μm or less, preferably 10/10 to 40/40 μm. ..
以下、本発明を実施例を挙げて詳細に説明するが、本発明はこれら実施例に何ら限定されるものではない。 Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.
実 施 例 １
レジストの剥離液の調製：
以下の表１に記載の成分を水に混合、溶解してレジストの剥離液を調製した。Example 1
Preparation of resist stripping solution:
The components listed in Table 1 below were mixed and dissolved in water to prepare a resist stripping solution.
実 施 例 ２
剥離試験：
（１）基板作製方法
銅張積層板（古河電工（株）製：ＣＣＬ：電解銅箔ＧＴＳ ３５μｍ箔）をドライフィルムレジスト−基材間の密着向上の為に粗化処理（ＪＣＵ製：エバケムネオブラウンＮＢＳII、エッチング量０．５μｍ）にて表面粗度をＲａ約０．７５μｍとした。その後、ドライフィルムレジスト（日立化成製：ＲＤ−１２２５（ＳＡＰ用）：２５μｍ厚）を使用してラミネートからパターン露光、現像までを実施した。本基板へ銅めっき（ＪＣＵ製：ＣＵ−ＢＲＩＴＥ ＶＬ）を１５μｍ厚で施した後、５０×５０ｍｍ２へ切り出したものを試験片とした。なお、この試験片は、一枚に以下の表２のＬ／Ｓのパターン部分と、べた張り部分とを有するものである。Example 2
Peeling test:
(1) Substrate manufacturing method A copper-clad laminate (Furukawa Electric Co., Ltd .: CCL: electrolytic copper foil GTS 35 μm foil) is roughened to improve adhesion between the dry film resist and the substrate (JCU: Ebake). The surface roughness was set to Ra about 0.75 μm with Muneo Brown NBSII, etching amount 0.5 μm). Then, using a dry film resist (Hitachi Kasei: RD-1225 (for SAP): 25 μm thickness), laminating, pattern exposure, and development were performed. The substrate was copper-plated (manufactured by JCU: CU-BRITE VL) to a thickness of 15 μm, and then cut into 50 × 50 mm 2 as a test piece. In addition, this test piece has the L / S pattern part and the sticky part of Table 2 below in one piece.
（２）パターン基板上の残存するレジストの評価方法
上記評価方法にてスプレー稼働時間を４分に固定し、Ｌ／Ｓ＝２０／２０〜４０／４０μｍのパターン部分の剥離残渣の有無を以下の評価基準で評価した。その結果を表２に示した。(2) Evaluation method of residual resist on the pattern substrate The spray operation time was fixed to 4 minutes by the above evaluation method, and the presence or absence of peeling residue of the pattern portion of L / S = 20/20 to 40/40 μm was determined as follows. It was evaluated by the evaluation criteria. The results are shown in Table 2.
＜剥離残渣の評価基準＞
（点数）（内容）
１：残渣なし
２：極僅かに残渣あり(顕微鏡で観察しても分かりにくい程度)
３：僅かに残渣あり
４：ほぼ剥離出来ているが、一部残渣多い
５：半分以上剥離出来ているが、一部残渣多い
６：ほぼ剥離不可であるが、一部剥離
７：剥離不可<Evaluation criteria for peeling residue>
(Score) (Content)
1: No residue 2: Very little residue (not easy to understand even when observed with a microscope)
3: Slight residue 4: Almost peeled, but some residue is large 5: Half or more peeled, but some residue is large 6: Almost impossible to peel, but partially peeled 7: Not peelable
この結果より、セロソルブを含有するレジストの剥離液において、水酸化ナトリウムに代えて水酸化カリウムを用いた本発明組成は、水酸化ナトリウムを用いた比較組成よりも狭いＬ／Ｓであってもレジストを除去できることが分かった。 From this result, in the stripping solution of the resist containing cellosolve, the composition of the present invention using potassium hydroxide instead of sodium hydroxide is a resist even if the L / S is narrower than the comparative composition using sodium hydroxide. Was found to be able to be removed.
（３）剥離性能の評価方法
液温を５０℃にした各剥離液をスプレー装置を使用して上記試験片へ剥離処理を実施し、試験片のべた張り部分のＤＦＲが目視で全面積の９０％以上剥離された時点を剥離時間とした。また、剥離片サイズ（長辺）はスプレー停止後に試験基板固定用の台に設置したカストリ用メッシュに付着したものを採取し、目視で実施した。その際のスプレー装置の条件はフルコーンノズルで流量５Ｌ／ｍｉｎ、圧力０．１ＭＰａとした。その結果を表３に示した。(3) Evaluation method of peeling performance Each peeling liquid whose liquid temperature was set to 50 ° C. was peeled off to the above test piece using a spray device, and the DFR of the sticky part of the test piece was visually 90 in the total area. The time when% or more was peeled off was defined as the peeling time. In addition, the size (long side) of the peeled piece was collected by collecting the one attached to the castry mesh installed on the table for fixing the test substrate after the spray was stopped, and visually performed. The conditions of the spray device at that time were a full cone nozzle, a flow rate of 5 L / min, and a pressure of 0.1 MPa. The results are shown in Table 3.
（４）金属のアタック性の評価方法
上記評価方法にてスプレー稼働時間を１０分に固定して処理を実施した。その後、基板の銅めっき箇所を電子顕微鏡（日立ハイテクノロジーズ製：Ｓ−３４００Ｎ）により表面形状を以下の評価基準で評価した。その結果も表３に示した。(4) Evaluation method of metal attack property The treatment was carried out by fixing the spray operating time to 10 minutes by the above evaluation method. Then, the copper-plated portion of the substrate was evaluated by an electron microscope (manufactured by Hitachi High-Technologies Corporation: S-3400N) for the surface shape according to the following evaluation criteria. The results are also shown in Table 3.
＜金属アタック性の評価基準＞
（点数）（内容）
１：変化無し
２：極僅かに変化あり(顕微鏡で観察しても分かりにくい程度)
３：僅かに変化あり
４：はっきりとした変色が発生 <Evaluation criteria for metal attack>
(Score) (Content)
1: No change 2: Very slight change (difficult to understand even when observed with a microscope)
3: Slight change 4: Clear discoloration occurs
この結果より、剥離液中のアルカリ濃度が同じ場合、水酸化カリウムを用いた方が剥離片サイズをより小さく、また剥離時間もより短くできることが分かった。 From this result, it was found that when the alkali concentration in the stripping solution was the same, the stripping piece size could be made smaller and the stripping time could be shortened by using potassium hydroxide.
実 施 例 ３
レジストの剥離液キット：
カリウム塩を０．２ｍｏｌ／Ｌで含有する第１液と、セロソルブを０．０１５ｍｏｌ／Ｌで含有する第２液をそれぞれ容器に入れ、レジストの剥離液キットを製造した。Actual example 3
Resist stripper kit:
A first solution containing a potassium salt at 0.2 mol / L and a second solution containing cellosolve at 0.015 mol / L were placed in containers to prepare a resist stripping solution kit.
実 施 例 ４
レジストの剥離液キット：
カリウム塩を０．２ｍｏｌ／Ｌで含有する第１液と、セロソルブを０．０１５ｍｏｌ／Ｌで含有する第２液と、ケイ酸塩を０．０３ｍｏｌ／Ｌで含有する第３液をそれぞれ容器に入れ、レジストの剥離液キットを製造した。Example 4
Resist stripper kit:
A first solution containing 0.2 mol / L of potassium salt, a second solution containing 0.015 mol / L of cellosolve, and a third solution containing 0.03 mol / L of silicate are placed in a container. And a resist stripping solution kit was manufactured.
本発明剥離液は、レジストが施された基材からレジストを除去する工程を含むプリント配線板、半導体基板、フラットパネルディスプレイまたはリードフレームの製造方法に利用できる。
以 上The stripping solution of the present invention can be used in a method for manufacturing a printed wiring board, a semiconductor substrate, a flat panel display or a lead frame, which includes a step of removing the resist from a resisted substrate.
that's all
Claims (12)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017234886 | 2017-12-07 | ||
| JP2017234886 | 2017-12-07 | ||
| PCT/JP2018/033746 WO2019111479A1 (en) | 2017-12-07 | 2018-09-12 | Resist stripping solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2019111479A1 true JPWO2019111479A1 (en) | 2020-12-10 |
Family
ID=66750436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019558014A Pending JPWO2019111479A1 (en) | 2017-12-07 | 2018-09-12 | Resist stripper |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2019111479A1 (en) |
| CN (1) | CN111448521A (en) |
| TW (1) | TW201931030A (en) |
| WO (1) | WO2019111479A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021141591A1 (en) | 2020-01-10 | 2021-07-15 | Hewlett-Packard Development Company, L.P. | Three-dimensional printing with wetting agent |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339127A (en) * | 1976-09-21 | 1978-04-10 | Fuji Yakuhin Kogyo Kk | Photo resist frilling agent |
| JPH07115048A (en) * | 1993-10-15 | 1995-05-02 | Sony Corp | Peeling method |
| EP1729179A1 (en) * | 2005-06-03 | 2006-12-06 | Atotech Deutschland Gmbh | Method for fine line resist stripping |
| JP2009069505A (en) * | 2007-09-13 | 2009-04-02 | Tosoh Corp | Cleaning solution and cleaning method for removing resist |
| KR101562053B1 (en) * | 2012-06-13 | 2015-10-20 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Liquid composition for cleaning, method for cleaning semiconductor element, and method for manufacturing semiconductor element |
| JPWO2017195453A1 (en) * | 2016-05-13 | 2019-04-04 | 株式会社Ｊｃｕ | Resist stripping solution |
| JP6860276B2 (en) * | 2016-09-09 | 2021-04-14 | 花王株式会社 | Cleaning agent composition for peeling resin mask |
| CN107390482B (en) * | 2016-11-22 | 2019-07-09 | 长濑化成株式会社 | The stripping means of anticorrosive additive stripping liquid controlling and resist |
-
2018
- 2018-09-12 CN CN201880078975.2A patent/CN111448521A/en active Pending
- 2018-09-12 JP JP2019558014A patent/JPWO2019111479A1/en active Pending
- 2018-09-12 WO PCT/JP2018/033746 patent/WO2019111479A1/en active Application Filing
- 2018-09-21 TW TW107133279A patent/TW201931030A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW201931030A (en) | 2019-08-01 |
| WO2019111479A1 (en) | 2019-06-13 |
| CN111448521A (en) | 2020-07-24 |
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