JPWO2019107258A1 - 基板液処理装置、基板液処理方法および記録媒体 - Google Patents
基板液処理装置、基板液処理方法および記録媒体 Download PDFInfo
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- JPWO2019107258A1 JPWO2019107258A1 JP2019557189A JP2019557189A JPWO2019107258A1 JP WO2019107258 A1 JPWO2019107258 A1 JP WO2019107258A1 JP 2019557189 A JP2019557189 A JP 2019557189A JP 2019557189 A JP2019557189 A JP 2019557189A JP WO2019107258 A1 JPWO2019107258 A1 JP WO2019107258A1
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- cleaning
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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Abstract
Description
まず、めっき処理部5に基板Wが搬入され、搬入された基板Wが、基板保持部52に保持される(ステップS1)。ここでは、基板Wの下面が真空吸着されて、基板保持部52に基板Wが水平に保持される。
次に、基板保持部52に水平に保持された基板Wが、前洗浄処理される(ステップS2)。この場合、まず、回転モータ523が駆動されて基板Wが所定の回転数で回転する。続いて、退避位置に位置づけられていたノズルアーム56が、吐出位置に移動する。次に、回転する基板Wに、前洗浄液ノズル541から前洗浄液L2が供給されて、基板Wの表面が洗浄される。これにより、下地金属層93に形成された酸化皮膜や付着物等が、基板Wから除去される。基板Wに供給された前洗浄液L2は、ドレンダクト581に排出される。
続いて、洗浄処理された基板Wがリンス処理される(ステップS3)。この場合、回転する基板Wに、リンス液ノズル551からリンス液L3が供給されて、基板Wの表面がリンス処理される。これにより、基板W上に残存する前洗浄液L2が洗い流される。基板Wに供給されたリンス液L3はドレンダクト581に排出される。
次に、めっき液供給工程として、リンス処理された基板W上にめっき液L1が供給されて盛り付けられる(ステップS4)。この場合、まず、基板Wの回転数を、リンス処理時の回転数よりも低減させる。例えば、基板Wの回転数を50〜150rpmにしてもよい。このことにより、基板W上に形成される後述のめっき膜96を均一化させることができる。なお、めっき液L1の盛り付け量を増大させるために、基板Wの回転は停止させてもよい。
次に、めっき液加熱処理工程として、基板W上に盛り付けられためっき液L1が加熱される。このめっき液加熱処理工程は、蓋体6が基板Wを覆う工程(ステップS5)と、不活性ガスを供給する工程(ステップS6)と、めっき液L1を加熱する加熱工程(ステップS7)と、を有している。なお、めっき液加熱処理工程においても、基板Wの回転数は、めっき液供給工程と同様の速度(あるいは回転停止)で維持されることが好適である。
まず、基板Wが蓋体6によって覆われる(ステップS5)。この場合、まず、蓋体移動機構7の旋回モータ72が駆動されて、退避位置に位置づけられていた蓋体6が水平方向に旋回移動して、上方位置に位置づけられる。続いて、蓋体移動機構7のシリンダ73が駆動されて、上方位置に位置づけられた蓋体6が下降する。これにより、基板Wが蓋体6によって覆われて、基板Wの周囲の空間が閉塞化される。
基板Wが蓋体6によって覆われた後、蓋体6の天井部61に設けられたガスノズル661が、蓋体6の内側に不活性ガスを吐出する(ステップS6)。このことにより、蓋体6の内側が不活性ガスに置換され、基板Wの周囲が低酸素雰囲気になる。不活性ガスは、所定時間吐出され、その後、不活性ガスの吐出を停止する。
次に、基板W上に盛り付けられためっき液L1が加熱される(ステップS7)。加熱工程において、ヒータ63が駆動されて、基板W上に盛り付けられためっき液L1が加熱される。加熱工程でのめっき液L1の加熱は、めっき液L1の温度が所定温度まで上昇するように設定された所定時間行われる。めっき液L1の温度が、成分が析出する温度まで上昇すると、基板Wの上面にめっき液L1の成分が析出し、めっき膜96が形成され始める。
加熱工程が終了すると、蓋体移動機構7が駆動されて、蓋体6が退避位置に位置づけられる(ステップS8)。この場合、まず、蓋体移動機構7のシリンダ73が駆動されて、蓋体6が上昇して、上方位置に位置づけられる。その後、蓋体移動機構7の旋回モータ72が駆動されて、上方位置に位置づけられた蓋体6が水平方向に旋回移動して、退避位置に位置づけられる。
次に、めっき液加熱処理された基板Wがリンス処理される(ステップS9)。この場合、まず、基板Wの回転数を、めっき処理時の回転数よりも増大させる。例えば、めっき処理前の基板リンス処理工程(ステップS3)と同様の回転数で基板Wを回転させる。続いて、退避位置に位置づけられていたリンス液ノズル551が、吐出位置に移動する。次に、回転する基板Wに、リンス液ノズル551からリンス液L3が供給されて、基板Wの表面が洗浄される。このことにより、基板W上に残存するめっき液L1が洗い流される。
続いて、リンス処理された基板Wが乾燥処理される(ステップS10)。この場合、例えば、基板Wの回転数を、基板リンス処理工程(ステップS9)の回転数よりも増大させて、基板Wを高速で回転させる。これにより、基板W上に残存するリンス液L3が振り切られて除去され、図3(b)に示すように、凹部91内であって下地金属層93上にめっき膜96が形成された基板Wが得られる。この場合、基板Wに、窒素(N2)ガスなどの不活性ガスを噴出して、基板Wの乾燥を促進させてもよい。また、基板リンス処理工程(ステップS10)では、例えばIPA(イソプロピルアルコール)等の有機系溶剤からなる処理液を基板Wに供給しても良い。この際、基板W上に残留していたリンス液L3をIPA等の処理液中に取り込むとともに、この処理液を基板W上から振り切って蒸発させ、基板Wを乾燥しても良い。
その後、基板Wが基板保持部52から取り出されて、めっき処理部5から搬出される(ステップS11)。
次に、本実施の形態の各変形例について説明する。なお、以下の変形例を説明する各図において、上述した実施の形態と同一部分には同一の符号を付してある。また、以下においては、上述した本実施の形態との相違点を中心に説明し、上述した本実施の形態と共通する事項については詳細な説明を省略する。
図5および図6は、本実施の形態の一変形例(変形例1)を示す図である。図5に示すように、めっき処理部5は、基板Wの上面に追加前洗浄液L4を供給する追加前洗浄液供給部50を更に備えている。この追加前洗浄液供給部50は、前洗浄処理される前の基板Wに対して追加前洗浄液L4を供給することにより、基板Wの下地金属層93の酸化を促進するものである。この追加前洗浄液供給部50は、基板保持部52に保持された基板Wに対して追加前洗浄液L4を吐出する追加前洗浄液ノズル501と、追加前洗浄液ノズル501に追加前洗浄液L4を供給する追加前洗浄液供給源502と、を有している。このうち追加前洗浄液供給源502は、追加前洗浄液L4を、追加前洗浄液配管503を介して追加前洗浄液ノズル501に供給するように構成されている。追加前洗浄液ノズル501は、ノズルアーム56に保持されてめっき液ノズル531、前洗浄液ノズル541およびリンス液ノズル551とともに移動可能になっている。なお、追加前洗浄液L4としては、下地金属層93に生じた金属の変質層を酸化させ、前洗浄液L2によって除去しやすくする表層酸化可能な洗浄液を用いることができ、例えばアルカリ性洗浄液が挙げられる。
図7は、本実施の形態の他の変形例(変形例2)を示す図である。上述した実施の形態においては、基板Wを前洗浄処理する工程(ステップS2)の後、めっき液L1を供給する工程(ステップS4)の前に、基板Wをリンス処理する工程(ステップS3)が設けられている場合について説明した。しかしながら、図7に示すように、前洗浄処理工程(ステップS2)の後、基板Wをリンス処理する工程(ステップS3)を介在させることなく、めっき液L1を供給する工程(ステップS4)が行われても良い。すなわち、めっき液供給工程(ステップS4)において、前洗浄処理された基板W上にめっき液L1が供給される。これにより、前洗浄処理によって酸化皮膜が除去された下地金属層93が、リンス液L3中に混ざり込んだ酸素によって再度酸化されることを抑えることができる。なお、上述した追加前洗浄処理を行う場合(変形例1、図5および図6)においても、基板Wをリンス処理する工程(ステップS3)を設けなくても良い。
図8および図9は、本実施の形態の他の変形例(変形例3)を示す図である。図8に示すめっき処理方法(変形例3)においては、基板Wに供給される前の前洗浄液L2を脱気処理する工程(ステップS14)が設けられている。この場合、図9に示すように、前洗浄液供給部54の前洗浄液供給源542は、前洗浄液L2を貯留する供給タンク545を有している。また、供給タンク545には、基板Wに供給される前の前洗浄液L2を脱気処理する脱気処理部546が接続されている。脱気処理部546は、例えば、窒素などの不活性ガスを供給タンク545内に供給するように構成され、これにより供給タンク545に貯留された前洗浄液L2中の溶存酸素および溶存水素を除去する。この場合、前洗浄液L2中に窒素などの不活性ガスを溶解させることにより、既に前洗浄液L2中に溶存している酸素や水素等のその他のガスを前洗浄液L2の外部に排出することができる。前洗浄液L2から排出された酸素や水素は、供給タンク545から排出される。このように、前洗浄液L2を脱気処理することにより、下地金属層93が、前洗浄液L2中に溶存する酸素によって酸化されることを抑制することができる。なお、この場合においても、上記変形例2と同様、基板Wをリンス処理する工程(ステップS3)を設けなくても良い。
Claims (14)
- 凹部を有するとともに前記凹部の底面から下地金属層が露出する基板を水平に保持して回転させる基板保持部と、
前記基板保持部に保持されて回転する前記基板に対してジカルボン酸又はトリカルボン酸である前洗浄液を供給して、前記下地金属層を前洗浄処理する前洗浄液供給部と、を備え、
前記基板上における前記前洗浄液の温度は、40℃以上である、基板液処理装置。 - 前記前洗浄処理された前記基板に対してめっき液を供給するめっき液供給部を更に備えた、請求項1に記載の基板液処理装置。
- 前記前洗浄液の温度は、前記めっき液の温度の±5℃以内である、請求項2に記載の基板液処理装置。
- 前記前洗浄液の温度は、60℃以上70℃以下である、請求項1乃至3のいずれか一項に記載の基板液処理装置。
- 前記前洗浄処理される前の前記基板に対して追加前洗浄液を供給して、前記下地金属層の酸化を促進する追加前洗浄液供給部を更に備えた、請求項1乃至4のいずれか一項に記載の基板液処理装置。
- 前記基板に供給される前の前記前洗浄液を脱気処理する脱気処理部を更に備えた、請求項1乃至5のいずれか一項に記載の基板液処理装置。
- 凹部を有するとともに前記凹部の底面から下地金属層が露出する基板を水平に保持して回転する工程と、
回転する前記基板に対してジカルボン酸又はトリカルボン酸である前洗浄液を供給して、前記下地金属層を前洗浄処理する工程と、を備え、
前記基板上における前記前洗浄液の温度は、40℃以上である、基板液処理方法。 - 前記前洗浄処理された前記基板に対してめっき液を供給する工程を更に備えた、請求項7に記載の基板液処理方法。
- 前記前洗浄液の温度は、前記めっき液の温度の±5℃以内である、請求項8に記載の基板液処理方法。
- 前記前洗浄処理する工程の後、前記基板をリンス処理する工程を介在させることなく、前記めっき液を供給する工程が行われる、請求項8又は9に記載の基板液処理方法。
- 前記前洗浄液の温度は、60℃以上70℃以下である、請求項7乃至10のいずれか一項に記載の基板液処理方法。
- 前記前洗浄処理される前の前記基板に対して追加前洗浄液を供給して、前記下地金属層の酸化を促進する工程を更に備えた、請求項7乃至11のいずれか一項に記載の基板液処理方法。
- 前記基板に供給される前の前記前洗浄液を脱気処理する工程を更に備えた、請求項7乃至12のいずれか一項に記載の基板液処理方法。
- 基板液処理装置の動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記基板液処理装置を制御して請求項7乃至13のいずれか一項に記載の基板液処理方法を実行させるプログラムが記録された記録媒体。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007274003A (ja) * | 2002-11-15 | 2007-10-18 | Ebara Corp | 基板保持装置、基板処理装置及び基板保持装置への基板着脱方法 |
WO2008001698A1 (en) * | 2006-06-26 | 2008-01-03 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
JP2013010995A (ja) * | 2011-06-29 | 2013-01-17 | Tokyo Electron Ltd | めっき処理装置、めっき処理方法および記憶媒体 |
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