JPWO2019074058A1 - Anisotropic conductive film and laminate - Google Patents

Abstract

Provided are an anisotropic conductive film and a laminate having excellent conductivity and adhesion. The anisotropic conductive film has conductive particles and a curable resin layer containing the conductive particles. When the average particle diameter of the conductive particles is A and the thickness of the curable resin layer is T, A ≦ T ≦ 1.2A and A ≦ 10 μm.

Description

The present invention relates to an anisotropic conductive film in which conductive particles are contained in a curable resin layer and a laminate having an anisotropic conductive film, and in particular, the average particle diameter of the conductive particles and the thickness of the curable resin layer. The present invention relates to an anisotropic conductive film that defines the relationship with.

The anisotropic conductive member can be inserted between an electronic component such as a semiconductor element and a circuit board and pressurized to obtain an electrical connection between the electronic component and the circuit board, and the wiring layer and the wiring layer can be obtained. Since an electrical connection between wiring layers can be obtained simply by inserting it between and pressurizing it, it is widely used as an electrical connection member for electronic components such as semiconductor elements, and as an inspection connector for functional inspection. ing.
In particular, electronic components such as semiconductor elements are significantly downsized. As a method of directly connecting wiring boards such as conventional wire bonding, flip-chip bonding, thermocompression bonding, etc., the stability of electrical connection of electronic components cannot be sufficiently guaranteed, and therefore, as an electronic connection member. Anisotropic conductive members are attracting attention.

As the anisotropic conductive member, for example, an anisotropic conductive film containing conductive particles has been proposed. In Patent Document 1, conductive particles are dispersed in an adhesive layer between a first circuit member in which bump electrodes are arranged and a second circuit member in which circuit electrodes corresponding to bump electrodes are arranged. A method for manufacturing a connection structure connected via an anisotropic conductive film is described.
The bump electrodes and circuit electrodes are arranged in a staggered pattern so that their positions are different from each other between adjacent rows. In the heteroelectric conductive film, the conductive particles are unevenly distributed on one side, and the conductive particles and one side are arranged. The distance between them is greater than 0 μm and 1 μm or less, and 70% or more of the conductive particles are separated from other adjacent conductive particles. In Patent Document 1, the anisotropic conductive film is arranged so that one side of the anisotropic conductive film faces the second circuit member side, and the first circuit member and the second circuit member are thermocompression bonded.

Further, Patent Document 2 describes an insulating adhesive layer and an anisotropic conductive film containing conductive particles arranged in a grid pattern on the insulating adhesive layer. In the heterogeneous conductive film of Patent Document 2, regarding the distance between the centers of the arbitrary conductive particles and the conductive particles adjacent to the conductive particles, the shortest distance from the arbitrary conductive particles is set as the first center-to-center distance, and then When the short distance is defined as the distance between the second centers, the distance between the first centers and the distance between the second centers are 1.5 to 5 times the particle diameter of the conductive particles, respectively, and any conductive particles P0 and arbitrary For a sharp triangle formed by a conductive particle P0 at a distance between the conductive particles P0 and the first center, and a conductive particle P2 between an arbitrary conductive particle P0 and a distance between the first center or the second center, the conductive particle P0 , A sharp angle α formed by a straight line orthogonal to the direction of the straight line passing through P1 (hereinafter referred to as the first arrangement direction) and the direction of the straight line passing through the conductive particles P1 and P2 (hereinafter referred to as the second arrangement direction). Is 18 ° to 35 °.

Japanese Unexamined Patent Publication No. 2015-167186 Japanese Unexamined Patent Publication No. 2016-666573

Currently, anisotropic conductive films are widely used for mounting electronic components such as semiconductor elements. In recent years, in order to correspond to a connection in which the electrode arrangement pitch is narrow, it has become an issue to improve the electrical connection of a circuit having an electrode arrangement pitch narrow and to improve the insulation between adjacent circuits.
The performance of semiconductor elements has improved remarkably, and what could only be processed by a few semiconductor elements until now can now be processed by a single semiconductor element. In this situation, the number of electrodes or terminals of the semiconductor element increases, and when connecting to the semiconductor element, the number of connections tends to increase significantly.
Further, as the performance of the semiconductor element is improved, the size of the semiconductor element becomes equal to or smaller than that of the conventional semiconductor element. Therefore, the arrangement pitch of the electrodes or terminals provided on the semiconductor element tends to be narrow, and the lines (L) and spaces (S) required for the anisotropic conductive film are narrowed. However, when the line (L) / space (S) is as small as 5 μm / 5 μm, for example, the width of the line and the conductive particles used in the anisotropic conductive film are substantially the same. In this case, even with the anisotropic conductive films of Patent Document 1 and Patent Document 2 described above, good connection cannot be expected in terms of conductivity and adhesion.

An object of the present invention is to solve the above-mentioned problems based on the prior art and to provide an anisotropic conductive film and a laminate having excellent conductivity and adhesion.

In order to achieve the above object, the present invention has conductive particles and a curable resin layer containing the conductive particles, the average particle diameter of the conductive particles is A, and the thickness of the curable resin layer. Is T, an anisotropic conductive film having A ≦ T ≦ 1.2A and A ≦ 10 μm is provided.
The content of the conductive particles is preferably 3 to 10% by volume.
When the distance between the conductive particles adjacent to each other is G, it is preferable that A ≦ G.
Further, the conductive particles are preferably made of metal.

Further, the present invention provides a laminate having an anisotropic conductive film of the present invention and a member having an electrode or wiring, and the electrode or wiring of the member and the anisotropic conductive film are electrically connected to each other. Is.
The electrode or wiring protrudes from the surface of the member, and the amount of protrusion of the electrode or wiring is preferably 1/3 or less of the thickness of the anisotropic conductive film.

According to the present invention, it is possible to provide an anisotropic conductive film and a laminate having excellent conductivity and adhesion.

It is a schematic cross-sectional view which shows the anisotropic conductive film of embodiment of this invention. It is a schematic diagram which shows the bonding example of the anisotropic conductive film of embodiment of this invention. It is a schematic cross-sectional view which shows an example of the structure of the terminal of a semiconductor element. It is a schematic cross-sectional view which shows another example of the structure of the terminal of a semiconductor element. It is a schematic diagram which shows the 1st example of the laminated body of embodiment of this invention. It is a schematic diagram which shows an example of the arrangement of the terminal of a semiconductor element. It is a schematic diagram which shows the 2nd example of the laminated body of embodiment of this invention. It is a schematic diagram which shows the 3rd example of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 1st example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 1st example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 1st example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 2nd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 2nd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 2nd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 3rd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 3rd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows one step of the 3rd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the manufacturing method of the laminated body using the conventional anisotropic conductive film. It is a schematic cross-sectional view which shows one step of the manufacturing method of the laminated body using the conventional anisotropic conductive film.

Hereinafter, the anisotropic conductive film and the laminate of the present invention will be described in detail based on the preferred embodiments shown in the accompanying drawings.
It should be noted that the figures described below are exemplary for explaining the present invention, and the present invention is not limited to the figures shown below.
In the following, "~" indicating the numerical range includes the numerical values described on both sides. For example, the epsilon numerical alpha _{1 ~} numerical beta _1, the range of epsilon is a range including the numerical alpha ₁ and numerical beta _1, which is α ₁ ≦ ε ≦ _{β 1} if Shimese in mathematical symbols.

FIG. 1 is a schematic cross-sectional view showing an anisotropic conductive film according to an embodiment of the present invention, and FIG. 2 is a schematic view showing a bonding example of the anisotropic conductive film according to the embodiment of the present invention.
As shown in FIG. 1, the anisotropic conductive film 10 has a conductive particle 12 and a curable resin layer 14 containing the conductive particle 12. The anisotropic conductive film 10 has conductivity in the thickness direction D due to the conductive particles 12. The anisotropic conductive film 10 exhibits heterogeneous conductivity.
Further, the anisotropic conductive film 10 is provided with, for example, a release layer 15 on both surfaces of the curable resin layer 14. The anisotropic conductive film 10 is used by peeling off the release layer 15. Therefore, the release layer 15 may not be provided, but it is preferable to have the release layer 15 in order to facilitate handling such as transporting the anisotropic conductive film 10. As the release layer 15, for example, a film obtained by applying a silicone-based adhesive or a non-silicone-based adhesive to a base material to impart a release function is used. As the base material, for example, polyethylene terephthalate (PET), polyester, polypropylene, polyethylene and the like can be used.

When the average particle diameter of the conductive particles 12 is A and the thickness of the curable resin layer 14 is T, A ≦ T ≦ 1.2A and A ≦ 10 μm.
If A ≦ T ≦ 1.2A and A ≦ 10 μm, the conductivity and adhesion are excellent when the object to be connected is connected using the anisotropic conductive film 10.
When the thickness T of the curable resin layer 14 is T <A, the thickness of the curable resin layer is thinner than that of the conductive particles, and the adhesion is lowered.
When the thickness T of the curable resin layer 14 is T> 1.2A, the thickness of the curable resin layer is thicker than that of the conductive particles, and the stability of conduction is lowered.
If the average particle diameter A exceeds 10 μm, the conductive particles 12 are large, so that the adhesion is lowered. Further, when the average particle diameter A exceeds 10 μm, when the line and space is as small as several μm, the conductive particles 12 become relatively larger than the line width of the line and space, making it difficult to secure conductivity. Become. When the width of the line is 5 μm, the average particle diameter A is about 1.3 μm.

The anisotropic conductive film 10 preferably contains 3 to 10% by volume of the conductive particles 12. By setting the content of the conductive particles 12 in the above range, the contact area between the curable resin layer 14 and the object to be connected can be secured, and the adhesion can be maintained.
Further, when the distance between the conductive particles 12 adjacent to each other is G, the average particle diameter A of the conductive particles 12 is preferably A ≦ G. If the distance G between the conductive particles 12 is too wide, the contact area of the curable resin layer 14 increases and the adhesion can be ensured, but it becomes difficult to secure the conductivity. Therefore, the upper limit value of the interval G of the conductive particles 12 is determined, for example, from the viewpoint of conductivity, and is determined by the lower limit value of the content of the conductive particles 12.
By setting the distance G between the conductive particles 12 to the above range, the contact area between the curable resin layer 14 and the object to be connected can be secured, and the adhesion can be maintained.

Applications of the anisotropic conductive film 10 include, for example, electrical connection between wiring layers or wiring boards.
For example, as shown in FIG. 2, the anisotropic conductive film 10 is arranged between the first wiring board 20 arranged on the lower side and the second wiring board 24 arranged on the upper side. When the anisotropic conductive film 10 was sandwiched between the electrode 22 of the first wiring substrate 20 and the electrode 26 of the second wiring substrate 24, the electrode 22 provided on the base material 21 and the base material 25 were provided. The conductive particles 12 arranged between the electrodes 26 electrically connect the electrodes 22 and 26, and the electrodes 22 and 26 are electrically connected to each other. Further, the electrode 22 and the electrode 26 are adhered to each other by the curable resin layer 14 of the anisotropic conductive film 10, and the electrode 22 and the electrode 26 are physically connected. Either one of the first wiring board 20 and the second wiring board 24 may be an IC (Integrated Circuit) chip.

On the other hand, as shown in FIG. 18, the conventional anisotropic conductive film 100 in which the curable resin layer 104 is thick and does not satisfy A ≦ T ≦ 1.2A is used with the first wiring board 20. When electrically connected to the second wiring board 24, the anisotropic conductive film 100 flows in the curable resin layer 104, and the arrangement of the conductive particles 12 changes. The conductive particles 12 have a small particle diameter and are pushed out by the flow. Therefore, as shown in FIG. 19, the number of conductive particles 12 between the electrode 22 and the electrode 26 is reduced, and it becomes difficult to secure the continuity between the electrode 22 and the electrode 26 in the anisotropic conductive film 100. .. The curable resin layer 104 shown in FIGS. 18 and 19 has the same configuration as the curable resin layer 14 described above, except that the thickness is different.

Both the first wiring board 20 and the second wiring board 24 have electrodes 22 and 26 forming wiring formed on the base materials 21 and 25.
As the base materials 21 and 25, those according to the purpose are appropriately used, and for example, a glass substrate, a polyethylene terephthalate (PET) substrate, a cycloolefin polymer (COP) substrate and the like are used.
Further, the electrodes 22 and 26 are metal electrodes, such as Au (gold), Ag (silver), Cu (copper), Al (aluminum), their alloys, ITO (Indium Tin Oxide), etc., depending on the purpose. Consists of things.
It is desirable that the arrangement interval between the electrodes 22 and 26, that is, the width of the electrode, which is also called line and space, and the distance between the electrodes are narrow, and the width of the electrode and the distance between the electrodes are preferably less than 10 μm, respectively. It is more preferably less than 5, μm, and even more preferably less than 1 μm.
When the electrode is formed by plating, the electrode height can be adjusted by the plating time and the type of plating solution. When the electrode is made of a metal foil, it can be adjusted by changing the thickness of the metal foil.

Hereinafter, the laminate having the anisotropic conductive film 10 will be described.
A laminate is constructed using the anisotropic conductive film 10. The laminate has an anisotropic conductive film and a member having electrodes or wirings, and the electrodes or wirings of the members and the anisotropic conductive film are electrically connected. The laminated body is, for example, one completed by itself, and exhibits a specific function by itself.
Members having electrodes or wiring are, for example, semiconductor devices and wiring boards.
FIG. 3 is a schematic cross-sectional view showing an example of the configuration of the terminal of the semiconductor element, and FIG. 4 is a schematic cross-sectional view showing another example of the configuration of the terminal of the semiconductor element.

For example, as shown in FIG. 3, the semiconductor elements 42 and 44 have a semiconductor layer 32, a rewiring layer 34, and a passivation layer 36. The rewiring layer 34 and the passivation layer 36 are electrically insulated insulating layers. The surface 32a of the semiconductor layer 32 is provided with an element region (not shown) in which a circuit or the like exhibiting a specific function is formed. The element region will be described later. The surface 32a of the semiconductor layer 32 corresponds to, for example, the surface on which the semiconductor terminals are provided.
The rewiring layer 34 is provided on the surface 32a of the semiconductor layer 32. The rewiring layer 34 is provided with a wiring 37 that is electrically connected to the element region of the semiconductor layer 32. A pad 38 is provided on the wiring 37, and the wiring 37 and the pad 38 are conductive. The wiring 37 and the pad 38 make it possible to send and receive signals to and from the element region, and to supply voltage and the like to the element region.

A passivation layer 36 is provided on the surface 34a of the rewiring layer 34. In the passivation layer 36, a terminal 30a is provided on a pad 38 provided on the wiring 37. The terminal 30a is electrically connected to the semiconductor layer 32.
Further, the rewiring layer 34 is not provided with the wiring 37, but is provided with only the pad 38. The terminal 30b is provided on the pad 38 which is not provided on the wiring 37. The terminal 30b is not electrically connected to the semiconductor layer 32.
By providing the anisotropic conductive film 10 at the terminals 30a and 30b, they are electrically connected to other members.

The end face 30c of the terminal 30a and the end face 30c of the terminal 30b both coincide with the surface 36a of the passivation layer 36, which is a so-called flush state, and the terminal 30a and the terminal 30b project from the surface 36a of the passivation layer 36. Absent. The terminals 30a and 30b shown in FIG. 3 are made flush with the surface 36a of the passivation layer 36 by, for example, polishing.

The terminals 30a and 30b are not limited to being flush with the surface 36a of the passivation layer 36, and may project from the surface 36a of the passivation layer 36 as shown in FIG. In this case, the protrusion amount δ of the terminals 30a and the terminals 30b with respect to the surface 36a of the passivation layer 36 is preferably 1/3 or less of the thickness of the anisotropic conductive film 10. The protrusion amount δ is not limited to the terminals, and the same applies to the electrodes and wiring connected by the anisotropic conductive film 10.
When the protrusion amount δ is 1/3 or less of the thickness of the anisotropic conductive film 10, it is stably connected to the anisotropic conductive film 10 without cracking or poor adhesion.
If the amount of protrusion δ exceeds 1/3 of the thickness of the anisotropic conductive film 10, cracks or poor adhesion may occur, and the connection stability with the anisotropic conductive film 10 may be impaired.
Further, when the anisotropic conductive film 10 is connected by two electrodes, at least one electrode may be used in order to reduce the protrusion amount δ to 1/3 or less of the thickness of the anisotropic conductive film 10. In this case, it is preferable to connect the anisotropic conductive film 10 from an electrode having a protrusion amount δ of 1/3 or less of the thickness of the anisotropic conductive film 10.
The thickness of the anisotropic conductive film 10 is the thickness T of the curable resin layer described above.

For the above-mentioned protrusion amount δ, an image of a cross section including the terminals 30a and 30b of the semiconductor elements 42 and 44 is acquired, the contour of the terminal 30a and the contour of the terminal 30b are acquired by image analysis, and the end face 30c of the terminal 30a is obtained. The end face 30c of the terminal 30b is detected. It can be obtained by obtaining the distance from the surface 36a of the passivation layer 36 to the end face 30c of the terminal 30a and the distance between the end face of the terminal 30b and 30c.
The end surface 30c of the terminal 30a and the end surface 30c of the terminal 30b are both surfaces located farthest from the surface 36a of the passivation layer 36, and are generally called upper surfaces.

The semiconductor layer 32 is not particularly limited as long as it is a semiconductor, and is composed of silicon or the like, but is not limited thereto, and may be silicon carbide, germanium, gallium arsenide, gallium nitride, or the like. Good.
The rewiring layer 34 is made of an electrically insulating material, for example, of polyimide.
Further, the passivation layer 36 is also made of an electrically insulating material, for example, silicon nitride (SiN) or polyimide.
The wiring 37 and the pad 38 are made of a conductive material, for example, copper, a copper alloy, aluminum, an aluminum alloy, or the like.

The terminals 30a and 30b are made of a conductive material similar to the wiring 37 and the pad 38, and are made of, for example, a metal or an alloy. Specifically, the terminals 30a and 30b are made of, for example, copper, a copper alloy, aluminum, an aluminum alloy, or the like.
The terminals 30a and 30b may be conductive as long as they are conductive, and are not limited to being made of a metal or an alloy, and are used for what is called a terminal, an electrode, or an electrode pad in the field of semiconductor devices. Materials can be used as appropriate.
Also in the terminal 30a and terminal 30b, and the width _{W L} of the width _{W L} and the terminal 30b of the terminal 30a, the interval _{W S} spacing _{W S} and terminal 30b of the terminal 30a is desired to narrow, and the width _{W L} of the terminal 30a the interval _{W S} spacing _{W S} and terminal 30b of width _{W L} and the terminal 30a of the terminal 30b, is preferably less than 10μm, respectively, and more preferably less than 5 [mu] m, more preferably less than 1 [mu] m. Even in this case, excellent conductivity and adhesion can be obtained by using the anisotropic conductive film 10.

Next, other configurations of the laminate are connected.
As the laminate, as in the laminate 40 shown in FIG. 5, the semiconductor element 42 and the semiconductor element 44 are bonded in the lamination direction Ds via an anisotropic conductive film 10 exhibiting heterogeneous conductivity, and the semiconductor element. The structure may be such that the 42 and the semiconductor element 44 are electrically connected. The laminate 40 shown in FIG. 5 is excellent in conductivity and adhesion between the semiconductor element 42 and the semiconductor element 44.
The semiconductor elements 42 and 44 have, for example, a plurality of terminals 45 as shown in FIG. Even if the size of the terminal 45 is a rectangle with a side of 10 μm and the distance between the terminals 45 is 10 μm, the semiconductor element 42 and the semiconductor element 44 can be electrically connected by using the above-mentioned anisotropic conductive film 10. You can connect.
As in the laminated body 40 shown in FIG. 7, the semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 are laminated and joined in the stacking direction Ds via the anisotropic conductive film 10, and are electrically connected. May be good. In the laminate 40 shown in FIG. 7, the conductivity and adhesion between the semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 are excellent.
Further, it may function as an optical sensor as in the laminated body 40 shown in FIG. In the laminated body 40 shown in FIG. 8, the semiconductor element 52 and the sensor chip 54 are laminated in the stacking direction Ds via the anisotropic conductive film 10. Further, the sensor chip 54 is provided with a lens 56. The laminate 40 shown in FIG. 8 has excellent conductivity and adhesion between the semiconductor element 52 and the sensor chip 54.

The semiconductor element 52 has a logic circuit formed therein, and its configuration is not particularly limited as long as it can process the signal obtained by the sensor chip 54.
The sensor chip 54 has an optical sensor that detects light. The optical sensor is not particularly limited as long as it can detect light, and for example, a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal Oxide Semiconductor) image sensor is used.
In the laminate 40 shown in FIG. 8, the semiconductor element 52 and the sensor chip 54 are connected via the anisotropic conductive film 10, but the present invention is not limited to this, and the semiconductor element 52 and the sensor chip 54 are connected to each other. May be directly joined.
The configuration of the lens 56 is not particularly limited as long as it can condense light on the sensor chip 54, and for example, a lens called a microlens is used.

The semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 described above have, for example, the semiconductor layer 32 described above, and have an element region (not shown).
The element region is an region in which various element component circuits such as capacitors, resistors, and coils for functioning as an electronic element are formed. In the element area, for example, a memory circuit such as a flash memory, an area in which a microprocessor and a logic circuit such as an FPGA (field-programmable gate array) are formed, a communication module such as a wireless tag, and wiring are formed. There is an area. In addition to this, a transmission circuit or a MEMS (Micro Electro Mechanical Systems) may be formed in the element region. MEMS is, for example, a sensor, an actuator, an antenna, or the like. Sensors include, for example, various sensors such as acceleration, sound and light.

As described above, an element constituent circuit or the like is formed in the element region, and the semiconductor element is provided with the rewiring layer 34 (see FIG. 3) as described above.
In the laminated body, for example, a semiconductor element having a logic circuit and a semiconductor element having a memory circuit can be combined. Further, all the semiconductor elements may have a memory circuit, or all the semiconductor elements may have a logic circuit. Further, the combination of the semiconductor elements in the laminated body 40 may be a combination of a sensor, an actuator, an antenna or the like, a memory circuit and a logic circuit, and is appropriately determined according to the application of the laminated body 40 or the like.

Further, the semiconductor element is not particularly limited, and specific examples thereof include the following. Examples of the semiconductor element include logic integrated circuits such as ASIC (Application Specific Integrated Circuit), FPGA (Field Programmable Gate Array), and ASSP (Application Specific Standard Product), in addition to the above-mentioned ones. Further, for example, a microprocessor such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit) can be mentioned. Further, for example, DRAM (Dynamic Random Access Memory), HMC (Hybrid Memory Cube), MRAM (Magnetoresistive Random Access Memory), PCM (Phase-Change Memory), ReRAM (Resistance Random Access Memory), FeRAM (Ferroelectric Random Access Memory) , Flash memory and other memories. Further, for example, analog integrated circuits such as LED (Light Emitting Diode), power device, DC (Direct Current) -DC (Direct Current) converter, and Insulated Gate Bipolar Transistor (IGBT) can be mentioned.
Further, as semiconductor elements, for example, GPS (Global Positioning System), FM (Frequency Modulation), NFC (Near Field Communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network) ) Etc., discrete elements, Passive devices, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, IPDs (Integrated Passive Devices) and the like. The semiconductor element may be a TEG (Test Element Group) chip.
In addition to the semiconductor element, an interposer and a TAB (Tape Automated Bonding) tape can also be connected.
Further, as a object to be connected, it can be used for connecting an electrode pad of a transparent conductive film and an electrode pad of FPC (Flexible Printed Circuits). It can also be used to directly connect and mount an IC (Integrated Circuit) chip on an electrode pad of a transparent conductive film. The transparent conductive film is not particularly limited as long as it has low visibility and is difficult to see. For example, a conductive film composed of a transparent substance such as ITO may be used, and the line width is as thin as several μm. A conductive film composed of a metal wire may be used. Further, as the transparent conductive film, for example, various conductive films used for touch sensors and the like can be appropriately used.
Further, the IC chip has a plurality of terminals 45 as shown in FIG. 6, for example, like the semiconductor elements 42 and 44.

Next, a first example of a method for manufacturing a laminate using an anisotropic conductive film will be described.
The first example of the method for producing a laminate using an anisotropic conductive film relates to a chip-on-wafer, and shows the method for producing the laminate 40 shown in FIG.
9 to 11 are schematic views showing a first example of a method for manufacturing a laminate using the anisotropic conductive film according to the embodiment of the present invention in the order of steps.
In the first example of the method for manufacturing a laminate using the anisotropic conductive film, first, a semiconductor element 44 in which the anisotropic conductive film 10 is provided on the surface 44a is prepared.
Next, the semiconductor element 44 is arranged so that the anisotropic conductive film 10 is directed toward the first semiconductor wafer 60. Next, the alignment mark of the semiconductor element 44 and the alignment mark of the first semiconductor wafer 60 are used to align the semiconductor element 44 with respect to the first semiconductor wafer 60.
Regarding the alignment, the configuration is particularly limited as long as digital image data can be obtained for the image or reflection image of the alignment mark of the first semiconductor wafer 60 and the image or reflection image of the alignment mark of the semiconductor element 44. A known imaging device can be used as appropriate.

Next, as shown in FIG. 9, the semiconductor element 44 is placed in the element region of the first semiconductor wafer 60 via the anisotropic conductive film 10, and for example, a predetermined pressure is applied to determine the predetermined value. It is heated to a temperature, held for a predetermined time, and temporarily crimped. This is performed for all the semiconductor elements 44, and as shown in FIG. 10, all the semiconductor elements 44 are temporarily crimped to the element region of the first semiconductor wafer 60.

Next, in a state where all the semiconductor elements 44 are temporarily crimped to the element region of the first semiconductor wafer 60, a predetermined pressure is applied to the semiconductor elements 44, and the semiconductor elements 44 are heated to a predetermined temperature in advance. While holding for a predetermined time, all of the plurality of semiconductor elements 44 are collectively bonded to the element region of the first semiconductor wafer 60. This joining is called main crimping. As a result, the terminals (not shown) of the semiconductor element 44 are bonded to the anisotropic conductive film 10, and the terminals (not shown) of the first semiconductor wafer 60 are bonded to the anisotropic conductive film 10.
Next, as shown in FIG. 11, the first semiconductor wafer 60 to which the semiconductor element 44 is bonded via the anisotropic conductive film 10 is separated into individual pieces by dicing, laser scribing, or the like for each element region. As a result, the laminate 40 in which the semiconductor element 42, the anisotropic conductive film 10 and the semiconductor element 44 are bonded can be obtained.
As described above, in this crimping, the tact time can be reduced and the productivity can be increased by joining the plurality of semiconductor elements 44 at once.

Temporary crimping is the temporary attachment of an anisotropic conductive film to a connected object such as a semiconductor element.
If the temporary crimping strength is weak during the temporary crimping, the temporary crimping strength is important because the position shift occurs in the transfer process and the process until joining.
Further, the temperature condition and the pressurizing condition in the temporary crimping process are not particularly limited, and are appropriately set depending on, for example, the curable resin layer.
In the temporary crimping, for example, the anisotropic conductive film 10 is placed on the semiconductor element to be connected or the wiring board, and the pressure and temperature are temporarily crimped over an appropriate time. Depending on the pressure, temperature and time, the anisotropic conductive film 10 may be cured, and the curing may proceed before the main crimping, so that the main crimping may not be possible. Therefore, the temperature of the temporary crimping is set until the curing reaction is not promoted. It is desirable to set the temperature to.

The temperature condition in the main crimping is not particularly limited, but it is preferably a temperature higher than the temperature of the temporary crimping, and more specifically, it is more preferably 130 to 200 ° C.
The pressurizing conditions in the main crimping are not particularly limited, but are appropriately set according to the purpose, and are preferably 40 to 100 MPa.
The time of the main crimping is not particularly limited, but is appropriately set according to the purpose, and is preferably 3 to 15 seconds.

In the case of temporary crimping that joins individual semiconductor elements including the above-mentioned semiconductor element 44 and the first semiconductor wafer 60, Toray Engineering, Shibuya Kogyo Co., Ltd., Shinkawa Co., Ltd., and Yamaha Motor Co., Ltd. And other companies' devices can be used.
Wafers of various companies such as Mitsubishi Heavy Industries Machine Tool, Bond Tech, PMT Co., Ltd., Ayumi Kogyo, Tokyo Electron (TEL), EVG, Sus Microtech Co., Ltd. (SUSS), Musashino Engineering, etc. A joining device can be used.
For each of the temporary crimping and the main crimping, the atmosphere at the time of joining, the heating temperature, the pressing force (load), and the processing time are listed as control factors, but it is necessary to select the conditions suitable for the device such as the semiconductor element to be used. it can.
The atmosphere at the time of joining can be selected from the atmosphere, an inert atmosphere such as a nitrogen atmosphere, and a vacuum state.

A second example of a method for manufacturing a laminate using an anisotropic conductive film will be described.
12 to 14 are schematic views showing a second example of a method for manufacturing a laminate using the anisotropic conductive film according to the embodiment of the present invention in the order of steps.
The second example of the method for manufacturing the laminate using the anisotropic conductive film has three semiconductor elements 42, 44 as compared with the first example of the method for producing the laminate using the anisotropic conductive film. , 46 are the same as the first example of the method for manufacturing a laminated body using the anisotropic conductive film, except that they are laminated and bonded via the anisotropic conductive film 10. Therefore, detailed description of the manufacturing method common to the second example of the manufacturing method of the laminated body will be omitted.
The semiconductor element 44 is provided with an alignment mark (not shown) on the back surface 44b and a terminal (not shown). Further, the semiconductor element 44 is provided with the anisotropic conductive film 10 on the surface 44a. Further, the semiconductor element 46 is also provided with the anisotropic conductive film 10 on the surface 46a.

As shown in FIG. 12, in a state where all the semiconductor elements 44 are temporarily crimped to the element region of the first semiconductor wafer 60 via the anisotropic conductive film 10, the alignment marks on the back surface 44b of the semiconductor element 44 and the alignment marks. The alignment mark of the semiconductor element 46 is used to align the semiconductor element 46 with respect to the semiconductor element 44.

Next, as shown in FIG. 13, the semiconductor element 46 is temporarily crimped to the back surface 44b of the semiconductor element 44 via the anisotropic conductive film 10. Next, all the semiconductor elements 44 are temporarily crimped to the element region of the first semiconductor wafer 60 via the anisotropic conductive film 10, and all the semiconductor elements 44 are temporarily crimped to the semiconductor elements via the anisotropic conductive film 10. With the 46 temporarily crimped, the main crimping is performed under predetermined conditions. As a result, the semiconductor element 44 and the semiconductor element 46 are bonded via the anisotropic conductive film 10, and the semiconductor element 44 and the first semiconductor wafer 60 are bonded via the anisotropic conductive film 10. The terminals (not shown) of the semiconductor element 44, the semiconductor element 46, and the first semiconductor wafer 60 are bonded to the anisotropic conductive film 10.
Next, as shown in FIG. 14, the first semiconductor wafer 60 in which the semiconductor element 44 and the semiconductor element 46 are bonded via the anisotropic conductive film 10 is subjected to, for example, dicing or laser scribing for each element region. Individualized by. As a result, it is possible to obtain a laminate 40 in which the semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 are bonded via the anisotropic conductive film 10.

Next, a third example of a method for manufacturing a laminate using an anisotropic conductive film will be described.
A third example of a method for producing a laminate using an anisotropic conductive film relates to a wafer-on-wafer, and shows a method for producing the laminate 40 shown in FIG.
15 to 17 are schematic views showing a third example of a method for manufacturing a laminate using the anisotropic conductive film according to the embodiment of the present invention in the order of steps.
The third example of the method for producing a laminate using the anisotropic conductive film is a first semiconductor wafer 60 via the anisotropic conductive film 10 as compared with the first example of the method for producing a laminate. It is the same as the first example of the method for manufacturing a laminated body except that it joins the second semiconductor wafer 62 and the second semiconductor wafer 62. Therefore, a detailed description of the manufacturing method common to the first example of the manufacturing method of the laminated body will be omitted. Further, since the anisotropic conductive film 10 is as described above, detailed description thereof will be omitted.

First, a first semiconductor wafer 60 and a second semiconductor wafer 62 are prepared. The anisotropic conductive film 10 is provided on either the surface 60a of the first semiconductor wafer 60 or the surface 62a of the second semiconductor wafer 62. For example, as shown in FIG. 15, the anisotropic conductive film 10 is provided on the surface 60a of the first semiconductor wafer 60. In this case, the anisotropic conductive film 10 is temporarily pressure-bonded to the surface 60a of the first semiconductor wafer 60, for example.
Next, the surface 60a of the first semiconductor wafer 60 and the surface 62a of the second semiconductor wafer 62 are opposed to each other. Then, the alignment mark of the first semiconductor wafer 60 and the alignment mark of the second semiconductor wafer 62 are used to align the second semiconductor wafer 62 with respect to the first semiconductor wafer 60.
Next, the surface 60a of the first semiconductor wafer 60 and the surface 62a of the second semiconductor wafer 62 are opposed to each other, and the first semiconductor wafer 60 and the second semiconductor wafer 60 and the second semiconductor wafer 60 are used as shown in FIG. The semiconductor wafer 62 is bonded to the semiconductor wafer 62 via the anisotropic conductive film 10. In this case, the temporary crimping is performed and then the main crimping is performed.

Next, as shown in FIG. 17, in a state where the first semiconductor wafer 60 and the second semiconductor wafer 62 are joined via the anisotropic conductive film 10, for each element region, for example, dicing or laser scribing. Individualize by etc. As a result, the laminate 40 in which the semiconductor element 42 and the semiconductor element 44 are bonded to each other via the anisotropic conductive film 10 can be obtained. In this way, the laminated body 40 can be obtained even by using the wafer-on-wafer.
Since the individualization is as described above, detailed description thereof will be omitted.
Further, as shown in FIG. 17, it is necessary to make the first semiconductor wafer 60 and the second semiconductor wafer 62 thinner in a state where the first semiconductor wafer 60 and the second semiconductor wafer 62 are joined. If there is a semiconductor wafer, it can be thinned by chemical mechanical polishing (CMP) or the like.

In the third example of the method for manufacturing a laminated body using an anisotropic conductive film, a two-layer structure in which a semiconductor element 42 and a semiconductor element 44 are laminated has been described as an example, but the present invention is not limited to this. Of course, as described above, three or more layers may be used. In this case, as in the second example of the method for manufacturing the laminated body 40 described above, the alignment mark (not shown) and the terminal (not shown) are provided on the back surface 62b of the second semiconductor wafer 62. A laminated body 40 having more than one layer can be obtained.
Since the laminate 40 can be manufactured using the chip-on-wafer, the profitability can be maintained and the manufacturing loss can be reduced by joining only the non-defective product of the semiconductor chip to the non-defective product portion in the semiconductor wafer. ..

The semiconductor element 44 provided with the anisotropic conductive film 10 described above can be formed by using the anisotropic conductive film 10 and a semiconductor wafer having a plurality of element regions (not shown). As described above, the element region is provided with an alignment mark (not shown) and a terminal (not shown) for alignment.

First, a predetermined pressure is applied, the temperature is heated to a predetermined temperature, and the anisotropic conductive film 10 is held for a predetermined time to bond the anisotropic conductive film 10 to the element region of the semiconductor wafer.
Next, the semiconductor wafer is fragmented for each element region to obtain a plurality of semiconductor elements 44.
Although the semiconductor element 44 provided with the anisotropic conductive film 10 has been described as an example, the semiconductor element 46 provided with the anisotropic conductive film 10 is also provided with the anisotropic conductive film 10. The anisotropic conductive film 10 can also be provided on the semiconductor wafer 62 in the same manner as the semiconductor element 44 provided with the anisotropic conductive film 10.

The joining of semiconductor devices has been described in the form of joining another semiconductor element to the semiconductor element, but the present invention is not limited to this, and is a form of joining a plurality of semiconductor elements to one semiconductor element. It may be in a one-to-many form. Further, a plurality of to a plurality of forms in which a plurality of semiconductor elements and a plurality of semiconductor elements are joined may be used.

Hereinafter, the anisotropic conductive film 10 will be described more specifically.
[Conductive particles]
The conductive particles are particles containing a conductive material described later contained in the curable resin layer. The conductive material preferably exposes the particle surface. By being exposed, it is possible to stably secure continuity with the connection target.
The average particle diameter A of the conductive particles is preferably in the range of 5% to 90%, more preferably 15% to 70%, and most preferably 30% to 50% of the width of the line.
<Conductive material>
The conductive material constituting the conductive particles is not particularly limited, and metal particles, metal coating resin particles, and the like are used.
Examples of the metal particles include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni) and the like. In addition to this, particles in which nickel core particles are coated with gold plating can also be used.
The metal-coated resin particles are, for example, particles in which the core particles of plastic particles are coated with nickel or gold metal plating.

<Content of conductive particles>
The content of conductive particles is expressed in% by volume.
The content of the conductive particles is preferably 30 to 95% by volume with respect to the total volume of the curable resin layer and the conductive particles.
Let the content of the conductive particles be Cs. Further, the cross-sectional area of the surface parallel to the line width of the curable resin layer and orthogonal to the surface of the curable resin layer is S, and the length orthogonal to the line width of the curable resin layer is L. .. It is not necessary to take the other end from the end in the direction orthogonal to the line width of the curable resin layer, and the length L can be any value containing 5 or more conductive particles. it can.
Further, the number of conductive particles is Ns. The average particle radius of the conductive particles is _RA . In this case, the total volume V of the volumes of the curable resin layer and the conductive particles is V = S × L. The volume Vs of the conductive particles ^{_{is, Vs = (4πR A 3/}} 3) is × Ns. The content Cs (volume%) of the conductive particles is Cs = Vs / V.

Five planes parallel to the width direction of the line and perpendicular to the length direction of the line of the curable resin layer were cut out, and cross-sectional images of the cut out cross sections were obtained using a scanning electron microscope, and five were obtained. The cross-sectional area and thickness of the curable resin layer are calculated from the cross-sectional image. The average value of the obtained cross-sectional area and the thickness is defined as the cross-sectional area S and the thickness T of the curable resin layer.
Further, the average particle diameter A of the conductive particles is a plane parallel to the width direction of the line of the curable resin layer and perpendicular to the length direction of the line using a scanning electron microscope as described above. , The central portion of any of the five conductive particles is cut out, and the average value in the thickness direction of the curable resin layer of the cut-out cross section of the conductive particles is used.
The average particle radius _RA is a value halved of the average value of the average particle diameter A obtained as described above.
The number of conductive particles is a value obtained by measuring the number of particles of the curable resin layer contained in a plane whose central portion in the thickness direction is parallel to the surface of the curable resin layer using a scanning electron microscope. ..

[Curable resin layer]
The curable resin layer preferably imparts bondability to the object to be connected. The curable resin layer preferably exhibits fluidity in the temperature range of 50 ° C. to 200 ° C. and cures at 200 ° C. or higher.
The curable resin layer contains at least a curable resin. The curable resin has an electrical insulating property. Electrical insulation means that the electrical resistance is 10 ¹⁰ Ω · m or more.
Examples of the curable resin include resins that are cured by heat or UV light (ultraviolet light). That is, thermosetting resin and photocurable resin can be mentioned.
Examples of the thermosetting resin include epoxy resin, phenol resin, polyimide resin, polyester resin, polyurethane resin, bismaleimide resin, melamine resin, phenoxy resin, and isocyanate resin.
Examples of the photocurable resin include a polymer in which a carbon-carbon double bond is introduced into a polymer side chain or a main chain or at the end of the main chain.
Among them, a thermosetting resin is preferable because the adhesion to the object to be connected is higher, and a polyimide resin and / or an epoxy resin is preferable because the insulation reliability is further improved and the chemical resistance is excellent.
The curable resin may be used alone or in combination of two or more.

The curable resin layer may contain components other than the curable resin.
For example, the curable resin layer may contain a polymerization initiator. Examples of the polymerization initiator include a thermal polymerization initiator and a photopolymerization initiator. Of these, a thermal cationic polymerization initiator is preferable. Examples of the photocationic polymerization initiator include aromatic diazonium salts, sulfonium salts, iodonium salts, phosphonium salts, benzointosylates, and o-nitrobenzyltosylates.

Further, the curable resin layer may contain a curing agent. Examples of the curing agent include aromatic amines such as diaminodiphenylmethane and diaminodiphenylsulfone, aliphatic amines, imidazole derivatives such as 4-methylimidazole, dicyandiamide, tetramethylguanidine, thiourea-added amines, methylhexahydrophthalic anhydride and the like. The carboxylic acid anhydride of is mentioned.

Examples of the additive contained in the curable resin layer include a silane coupling agent, an antioxidant, an antioxidant, a filler, and the like.

[Manufacturing method of anisotropic conductive film]
For the anisotropic conductive film, a raw material liquid in which the above-mentioned components of the curable resin layer are mixed is prepared, and while the raw material liquid is cooled, the conductive particles prepared separately are mixed with the raw material liquid and dispersed. The dispersion treatment is carried out using a high-speed stirrer or a homogenizer that can sufficiently stir the conductive particles so that they do not aggregate with each other and has a shearing force. The apparatus for performing the distributed processing is not particularly limited to the above-mentioned apparatus, and can be appropriately selected. The reason why the dispersion treatment is performed while cooling is that a high stirring heat may be generated when the dispersion is performed by strong stirring to obtain a good dispersion state. Since the appropriate degree of stirring heat depends on the type of curable resin, it is appropriately determined according to the curable resin.
The dispersed and mixed liquid is applied onto a release film to a specified thickness, and then placed in an oven to dry. As a result, an anisotropic conductive film can be obtained.

The method of changing the thickness of the anisotropic conductive film is not particularly limited, but it is desirable that the thickness difference is already present after coating. When the coating thickness is changed by the applicator, it can be changed by changing the gap between the release film and the applicator. The coating thickness can also be changed by a method of scraping off the liquid after coating once. Further, when quantitative coating is performed from the coating head, the thickness can be changed by changing the relative speed between the base material and the coating head and the supply speed. Furthermore, the thickness can be changed by coating by an inkjet method. The coating method for forming the anisotropic conductive film can be appropriately determined because of the purpose and the curable resin or the like.

The present invention is basically configured as described above. Although the anisotropic conductive film and the laminate of the present invention have been described in detail above, the present invention is not limited to the above-described embodiment, and various improvements or modifications have been made without departing from the gist of the present invention. Of course, it is also good.

Hereinafter, the present invention will be described in more detail with reference to examples. The materials, reagents, amounts of substances used, amounts of substances, proportions, treatment contents, treatment procedures, etc. shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as limited by the specific examples shown below.

In this example, the conduction stability and adhesion were evaluated for the anisotropic conductive films of Example 1, Comparative Example 1 and Comparative Example 2. In addition, a comprehensive evaluation was made based on the evaluation of conduction stability and the evaluation of adhesion. Table 1 below shows the evaluation results of conduction stability, adhesion, and comprehensive evaluation. The evaluation of conduction stability, adhesion, and comprehensive evaluation will be described below.

The stability of conduction will be described.
<Evaluation of conduction stability>
The resistance values of the anisotropic conductive film were measured at 30 points. The degree of stability of the resistance value was evaluated according to the evaluation criteria shown below. The resistance value was measured by the 4-terminal method using a digital multimeter.
Evaluation Criteria A: No connection failure.
B: Poor connection is less than 10%.
C: Poor connection exceeds 10%.

The adhesion will be described.
<Evaluation of adhesion>
With the glass surface of the joint facing down, the TEG (Test Element Group) chip was sandwiched between tweezers and lifted, and the resistance to the lifting was evaluated by a finger-to-finger method. It was carried out three times under each condition, and evaluated according to the evaluation criteria shown below in consideration of the resistance. The joint will be described later.
Evaluation Criterion A: There is resistance to lifting.
B: Some have resistance to lifting and some have no resistance and come off.
C: All peel off without resistance.

The comprehensive evaluation will be explained.
<Comprehensive evaluation>
In the comprehensive evaluation, when both the evaluations of the stability of conduction and the evaluation of the adhesion were "A", the comprehensive evaluation was set to "A".
Further, in the comprehensive evaluation, when one of the evaluation of the stability of conduction and the evaluation of the adhesion is "A", the evaluation result of the other is regarded as the evaluation of the comprehensive evaluation. For example, if the evaluation of conduction stability is "A" and the evaluation of adhesion is "B", the overall evaluation is "B".
Further, in the comprehensive evaluation, if there is no evaluation "A" among the evaluations of conduction stability and adhesion, the comprehensive evaluation is set to "C".

[Joint]
As the wiring board, a glass substrate having a thickness of 700 μm on which ITO (Indium Tin Oxide) comb-shaped wiring was formed was used. As electronic components, TEG (Test Element Group) chips (size: 5 mm x 10 mm, thickness: 0.5 mm, gold-plated bump size: 5 μm x 30 μm, bump height: 5 μm, space between bumps: 5 μm, number of bumps: 30 Pieces) were used.
An anisotropic conductive film is placed on the wiring of the wiring board, and the electrode terminals of the electronic components face each other so as to hit the comb-shaped wiring, and a heat conductive Teflon (registered trademark) sheet having an average thickness of 50 μm is used as a cushioning material. , The temperature was 180 ° C., the pressure was 60 MPa, and the time was 5 seconds for heating and pressure bonding with a heating tool to obtain a bonded body.

Hereinafter, Example 1, Comparative Example 1 and Comparative Example 2 will be described.
(Example 1)
The anisotropic conductive film of Example 1 will be described.
[Animolic conductive film]
(Curable resin component)
Phenoxy resin (Nippon Steel & Sumitomo Metal Chemical Co., Ltd., YP-50) 40 parts by mass Liquid epoxy resin (Mitsubishi Chemical Co., Ltd., jER828) 55 parts by mass Thermal cationic polymerization initiator (Shin-Etsu Chemical Co., Ltd., SI-60L) 4 parts by mass A thermosetting composition (curable resin component) containing the above-mentioned 1 part by mass of a silane coupling agent (Shin-Etsu Chemical Co., Ltd., KBM-403) was prepared.
(Conductive particles)
Gold-plated nickel core particles having an average particle size of 1.3 μm were used.
(Curable resin layer)
Preparation of Liquid Curable Resin Component Conductive plate-like particles were mixed and dispersed in the above-mentioned curable resin component. The amount of the curable resin component and the conductive particle component was adjusted so that the content of the conductive particles was 10% by volume.
(Quantity ratio)
Curable resin component 35 parts by mass Conductive particle component 22 parts by mass (mixing and dispersion)
Appropriate amounts of the curable resin component and the conductive particle component were charged into an IKA homogenizer (ULTRA-TURRAX®), and mixed and dispersed. At that time, since heat is generated by stirring, a cooling mechanism is provided to keep the temperature at 60 ° C. or lower.
<Preparation of curable resin coating film>
The above-mentioned liquid curable resin component is applied on a PET (polyethylene terephthalate) film which has been previously treated with silicone to give a peeling function so that the thickness after drying is 1.3 μm, and the temperature is 70 ° C. It was dried for 5 minutes. That is, the thickness T of the curable resin layer was T = A. In Example 1, the content of the conductive particles was set to 10% by volume.

(Comparative Example 1)
Comparative Example 1 was the same as that of Example 1 except that the thickness T of the curable resin layer was 0.9 A as compared with Example 1.
(Comparative Example 2)
Comparative Example 2 was the same as that of Example 1 except that the thickness T of the curable resin layer was 1.3 A as compared with Example 1.

As shown in Table 1, Example 1 was superior in conduction stability and adhesion as compared with Comparative Example 1 and Comparative Example 2.
In Comparative Example 1, the curable resin layer is thinner than the conductive particles. In this case, a part of the conductive particles is exposed from the curable resin layer, and it is easy to come into contact with the electrode to be connected. However, since it becomes difficult to make contact between the electrode and the curable resin layer, it becomes difficult to secure the adhesive force. Since the electrode was recessed by the conductive particles, the electrode and the curable resin layer came close to each other and adhered to each other.
In Comparative Example 2, the thickness of the curable resin layer is thicker than that of the conductive particles. In this case, the electrode and the curable resin layer come into direct contact with each other, and the adhesion is good. However, the probability of pushing out the conductive particles has increased, the probability of the conductive particles staying on the electrodes has decreased, and the stability of conduction has deteriorated.

10 Anisotropic conductive film 12 Conductive particles 14 Curable resin layer 15 Peeling layer 20 First wiring substrate 21, 25 Base materials 22, 26 Electrodes 24 Second wiring substrate 30a, 30b Terminal 30c End face 32 Semiconductor layer 32a, 34a, 36a Surface 34 Rewiring layer 36 Passive layer 37 Wiring 38 Pad 40 Laminated body 42, 44, 46, 52 Semiconductor elements 44a, 46a Front surface 44b, 62b Back surface 45 terminals 54 Sensor chip 56 Lens 60 First semiconductor wafer 60a, 62a surface 62 the second semiconductor wafer 100 anisotropic conductive film 104 cured resin layer a mean particle diameter D thickness direction Ds stacking direction G interval T thickness δ protrusion amount W _L width W _S interval

Claims (6)

With conductive particles
It has a curable resin layer containing the conductive particles and
An anisotropic conductive film in which A ≦ T ≦ 1.2 A and A ≦ 10 μm, where A is the average particle diameter of the conductive particles and T is the thickness of the curable resin layer. The anisotropic conductive film according to claim 1, wherein the content of the conductive particles is 3 to 10% by volume. The anisotropic conductive film according to claim 1 or 2, wherein A ≦ G, where G is the distance between the conductive particles adjacent to each other. The anisotropic conductive film according to any one of claims 1 to 3, wherein the conductive particles are made of a metal. The anisotropic conductive film according to any one of claims 1 to 4,
With a member having electrodes or wiring,
A laminate in which the electrodes or wiring of the member and the anisotropic conductive film are electrically connected. The electrode or the wiring projects from the surface of the member and
The laminate according to claim 5, wherein the amount of protrusion of the electrode or the wiring is 1/3 or less of the thickness of the anisotropic conductive film.