WO2019074058A1 - Anisotropic conductive film, and laminate - Google Patents

Abstract

Provided are: an anisotropic conductive film that has excellent conductivity and adhesion; and a laminate. The anisotropic conductive film includes conductive particles and a curable resin layer that contains the conductive particles. When A is the average particle diameter of the conductive particles and T is the thickness of the curable resin layer, A≤T≤1.2A, and A≤10 μm.

Description

Anisotropic conductive film and laminate

The present invention relates to an anisotropic conductive film in which conductive particles are contained in a curable resin layer and a laminate having the anisotropic conductive film, and in particular, the average particle diameter of the conductive particles and the thickness of the curable resin layer The invention relates to an anisotropic conductive film having a defined relationship with the above.

The anisotropic conductive member is inserted between, for example, an electronic component such as a semiconductor element and the circuit board, and an electrical connection between the electronic component and the circuit board can be obtained simply by applying pressure, and the wiring layer and the wiring layer And electrical connection between wiring layers can be obtained by simply inserting and pressing between them, so it is widely used as an electrical connection member for electronic components such as semiconductor elements, and as a test connector etc. when performing functional tests. ing.
In particular, downsizing of electronic components such as semiconductor elements is remarkable. In the conventional method of directly connecting wiring boards such as wire bonding, flip chip bonding, and thermocompression bonding, etc., the stability of the electrical connection of the electronic component can not be sufficiently ensured. Anisotropic conductive members have attracted attention.

As an anisotropic conductive member, for example, an anisotropic conductive film containing conductive particles has been proposed. In Patent Document 1, conductive particles are dispersed in an adhesive layer of a first circuit member in which bump electrodes are arranged and a second circuit member in which circuit electrodes corresponding to bump electrodes are arranged. A method of manufacturing a connection structure connecting via an anisotropic conductive film is described.
The bump electrodes and the circuit electrodes are arranged in a staggered manner so that the positions are different between adjacent rows, and in the anisotropic conductive film, the conductive particles are localized on one side, and the conductive particles and the one side The distance between them is more than 0 μm and not more than 1 μm, and 70% or more of the conductive particles are in a state of being separated from other adjacent conductive particles. In patent document 1, the anisotropically conductive film is arrange | positioned so that one surface side of an anisotropically conductive film may turn to the 2nd circuit member side, and the 1st circuit member and the 2nd circuit member are thermocompression-bonded.

In addition, Patent Document 2 describes an anisotropic conductive film including an insulating adhesive layer and conductive particles arranged in a lattice shape on the insulating adhesive layer. In the anisotropic conductive film of Patent Document 2, the shortest distance between any conductive particle and the conductive particle adjacent to the conductive particle is defined as the first distance between the centers. Assuming that a short distance is a second center-to-center distance, the first center-to-center distance and the second center-to-center distance are respectively 1.5 to 5 times the particle diameter of the conductive particles, and arbitrary conductive particles P0 and The conductive particles P0 and the conductive particles P1 at the first center-to-center distance and the conductive triangles P0 and the conductive particles P2 at the first center-to-center distance or the second center-to-center distance are conductive particles P0. , An acute angle formed by a straight line perpendicular to the direction of the straight line passing through P1 (hereinafter referred to as the first arrangement direction) and the direction of the straight line passing through the conductive particles P1 and P2 (hereinafter referred to as the second arrangement direction) Is 18 ° to 35 °.

JP, 2015-167186, A JP, 2016-66573, A

Currently, anisotropic conductive films are widely used for mounting electronic components such as semiconductor devices. In recent years, in order to correspond to the connection where the arrangement pitch of the electrodes is narrow, it is an object to improve the electrical connection of the circuit where the arrangement pitch of the electrodes is narrow and to improve the insulation between the adjacent circuits.
The performance improvement of semiconductor devices is remarkable, and it has become possible to process with one semiconductor device, which could not be processed until only a few semiconductor devices. In this situation, the number of electrodes or the number of terminals of the semiconductor element is increased, and the number of connections tends to be significantly increased when the semiconductor element is connected.
In addition, with the improvement of the performance of the semiconductor device, the size of the semiconductor device is also equal to or smaller than that of the conventional semiconductor devices. Therefore, the arrangement pitch of the electrodes or terminals provided in the semiconductor element tends to be narrow, and the line (L) and the space (S) required for the anisotropic conductive film become narrow. However, when the line (L) / space (S) is as small as, for example, 5 μm / 5 μm, the width of the line and the conductive particles used in the anisotropic conductive film are almost the same. In this case, even with the anisotropic conductive films of Patent Document 1 and Patent Document 2 described above, at present, good connection can not be expected in terms of conductivity and adhesion.

The object of the present invention is to solve the problems based on the above-mentioned prior art and to provide an anisotropic conductive film and a laminate excellent in conductivity and adhesion.

In order to achieve the above object, the present invention has conductive particles and a curable resin layer containing conductive particles, wherein the average particle diameter of the conductive particles is A, and the thickness of the curable resin layer is When T is T, an anisotropic conductive film in which A ≦ T ≦ 1.2 A and A ≦ 10 μm is provided.
The content of the conductive particles is preferably 3 to 10% by volume.
It is preferable to be A <= G, when setting the space | interval of the mutually adjacent conductive particle to G.
The conductive particles are preferably made of metal.

Moreover, it has the anisotropic conductive film of this invention, and a member which has an electrode or wiring, and provides the laminated body by which the electrode or wiring of a member and an anisotropic conductive film are electrically connected. It is.
The electrode or the wiring is protruded with respect to the surface of the member, and the protruding amount of the electrode or the wiring is preferably 1/3 or less of the thickness of the anisotropic conductive film.

According to the present invention, it is possible to provide an anisotropic conductive film and a laminate having excellent conductivity and adhesion.

It is a typical sectional view showing an anisotropic conductive film of an embodiment of the present invention. It is a schematic diagram which shows the example of joining of the anisotropic conductive film of embodiment of this invention. It is a typical sectional view showing an example of composition of a terminal of a semiconductor device. It is a schematic cross section which shows the other example of the structure of the terminal of a semiconductor element. It is a schematic diagram which shows the 1st example of the laminated body of embodiment of this invention. It is a schematic diagram which shows an example of arrangement | positioning of the terminal of a semiconductor element. It is a schematic diagram which shows the 2nd example of the laminated body of embodiment of this invention. It is a schematic diagram which shows the 3rd example of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 1st example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 1st example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 1st example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 2nd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 2nd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 2nd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 3rd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 3rd example of the manufacturing method of the laminated body of embodiment of this invention. It is a schematic diagram which shows 1 process of the 3rd example of the manufacturing method of the laminated body of embodiment of this invention. It is typical sectional drawing which shows 1 process of the manufacturing method of the laminated body using the conventional anisotropic conductive film. It is typical sectional drawing which shows 1 process of the manufacturing method of the laminated body using the conventional anisotropic conductive film.

Below, the anisotropic conductive film and the laminate of the present invention will be described in detail based on preferred embodiments shown in the attached drawings.
The drawings described below are illustrative for explaining the present invention, and the present invention is not limited to the drawings shown below.
In the following, “...” indicating a numerical range includes the numerical values described on both sides. For example, ε is a range from the numerical value α ₁ to the numerical value β ₁ and the range of ε is a range including the numerical value α ₁ and the numerical value β ₁ , and α ₁ ≦ ε ≦ β ₁ by mathematical symbols.

FIG. 1 is a schematic cross-sectional view showing an anisotropic conductive film according to an embodiment of the present invention, and FIG. 2 is a schematic view showing a bonding example of the anisotropic conductive film according to the embodiment of the present invention.
As shown in FIG. 1, the anisotropic conductive film 10 has conductive particles 12 and a curable resin layer 14 containing the conductive particles 12. The anisotropic conductive film 10 has conductivity in the thickness direction D by the conductive particles 12. The anisotropic conductive film 10 exhibits anisotropic conductivity.
In addition, the anisotropic conductive film 10 is provided, for example, with a peeling layer 15 on both surfaces of the curable resin layer 14. The anisotropic conductive film 10 is used by peeling the peeling layer 15. For this reason, although the peeling layer 15 may not be provided, in order to facilitate handling such as conveyance of the anisotropic conductive film 10, it is preferable that the peeling layer 15 be present. As the release layer 15, for example, a film in which a silicone adhesive or a non-silicone adhesive is applied to a substrate to which a release function is imparted is used. As the substrate, for example, polyethylene terephthalate (PET), polyester, polypropylene, and polyethylene can be used.

Assuming that the average particle diameter of the conductive particles 12 is A and the thickness of the curable resin layer 14 is T, A ≦ T ≦ 1.2 A and A ≦ 10 μm.
When A ≦ T ≦ 1.2 A and A ≦ 10 μm, when the object to be connected is connected using the anisotropic conductive film 10, the conductivity and the adhesiveness are excellent.
When the thickness T of the curable resin layer 14 is T <A, the thickness of the curable resin layer is thinner than that of the conductive particles, and the adhesion decreases.
When the thickness T of the curable resin layer 14 is T> 1.2 A, the thickness of the curable resin layer is thicker than that of the conductive particles, and the stability of conduction is reduced.
In addition, since the electroconductive particle 12 is large when average particle diameter A exceeds 10 micrometers, adhesiveness falls. In addition, when the average particle diameter A exceeds 10 μm, when the line and space is as small as several μm, the conductive particles 12 become relatively larger than the line width of the line and space, making it difficult to secure the conductivity. Become. When the line width is 5 μm, the average particle diameter A is about 1.3 μm.

In the anisotropic conductive film 10, the content of the conductive particles 12 is preferably 3 to 10% by volume. By making content of the electroconductive particle 12 into the above-mentioned range, the contact area of the curable resin layer 14 and a to-be-connected object can be ensured, and adhesiveness can be maintained.
Moreover, when the space | interval of the electroconductive particle 12 to mutually adjacent | abut is set to G, it is preferable that the average particle diameter A of the electroconductive particle 12 is A <= G. When the interval G of the conductive particles 12 is too wide, the contact area of the curable resin layer 14 increases and the adhesiveness can be secured, but it becomes difficult to secure the conductivity. Therefore, the upper limit value of the interval G of the conductive particles 12 is determined, for example, from the viewpoint of conductivity, and is determined by the lower limit value of the content of the conductive particles 12.
By setting the gap G of the conductive particles 12 in the above-described range, the contact area between the curable resin layer 14 and the connection target can be secured, and the adhesiveness can be maintained.

Examples of applications of the anisotropic conductive film 10 include electrical connection between wiring layers or between wiring boards.
For example, as shown in FIG. 2, the anisotropic conductive film 10 is disposed between the first wiring substrate 20 disposed on the lower side and the second wiring substrate 24 disposed on the upper side. When the anisotropic conductive film 10 is sandwiched between the electrodes 22 of the first wiring board 20 and the electrodes 26 of the second wiring board 24, the electrodes 22 provided on the base 21 and the bases 25 are provided. The electrode 22 and the electrode 26 are electrically connected by the conductive particles 12 disposed between the electrode 26 and the electrode 26, and the electrode 22 and the electrode 26 are electrically connected. Further, the electrode 22 and the electrode 26 are adhered by the curable resin layer 14 of the anisotropic conductive film 10, and the electrode 22 and the electrode 26 are physically connected. Note that one of the first wiring board 20 and the second wiring board 24 may be an IC (Integrated Circuit) chip.

On the other hand, as shown in FIG. 18, the first wiring substrate 20 is formed using the conventional anisotropic conductive film 100 in which the curable resin layer 104 is thick and does not satisfy A ≦ T ≦ 1.2 A. When the second wiring substrate 24 is electrically connected, the anisotropic conductive film 100 flows in the curable resin layer 104, and the arrangement of the conductive particles 12 changes. The conductive particles 12 have a small particle diameter and are extruded by the flow. For this reason, as shown in FIG. 19, the number of conductive particles 12 between the electrode 22 and the electrode 26 decreases, and in the anisotropic conductive film 100, it becomes difficult to secure conduction between the electrode 22 and the electrode 26. . In addition, the curable resin layer 104 shown in FIG. 18 and FIG. 19 is the same structure as the above-mentioned curable resin layer 14 except that the thickness is different.

Each of the first wiring board 20 and the second wiring board 24 is one in which the electrodes 22 and 26 constituting the wiring are formed on the base materials 21 and 25.
As the base materials 21 and 25, ones suitable for the purpose are appropriately used, and for example, a glass substrate, a polyethylene terephthalate (PET) substrate, a cycloolefin polymer (COP) substrate and the like are used.
The electrodes 22 and 26 are metal electrodes, such as Au (gold), Ag (silver), Cu (copper), Al (aluminum), their alloys, or ITO (Indium Tin Oxide) according to the purpose. Composed of
It is desirable that the spacing between the electrodes 22 and 26, that is, the width of the electrode, also called line and space, and the spacing between the electrodes be narrow, and the width of the electrodes and the spacing between the electrodes be less than 10 μm. More preferably, less than 5 μm, and even more preferably less than 1 μm.
The electrode height can be adjusted by the plating time and the type of plating solution when the electrode is formed by plating. Moreover, when an electrode is formed with metal foil, it can adjust by changing the thickness of metal foil.

Hereinafter, a laminate having the anisotropic conductive film 10 will be described.
The anisotropic conductive film 10 is used to form a laminate. A layered product has a member which has an anisotropic conductive film and an electrode or wiring, and an electrode or wiring of a member and an anisotropic conductive film are electrically connected. The laminate is, for example, one complete and exhibits a specific function alone.
The members having electrodes or wirings are, for example, semiconductor elements and wiring boards.
FIG. 3 is a schematic cross-sectional view showing an example of the configuration of the terminal of the semiconductor device, and FIG. 4 is a schematic cross-sectional view showing another example of the configuration of the terminal of the semiconductor device.

For example, as shown in FIG. 3, the semiconductor elements 42 and 44 have a semiconductor layer 32, a rewiring layer 34, and a passivation layer 36. The redistribution layer 34 and the passivation layer 36 are insulating layers electrically insulated. The surface 32 a of the semiconductor layer 32 is provided with an element region (not shown) in which a circuit or the like exhibiting a specific function is formed. The element region will be described later. The surface 32 a of the semiconductor layer 32 corresponds to, for example, a surface provided with a semiconductor terminal.
A redistribution layer 34 is provided on the surface 32 a of the semiconductor layer 32. In the rewiring layer 34, a wire 37 electrically connected to the element region of the semiconductor layer 32 is provided. The pad 38 is provided on the wiring 37, and the wiring 37 and the pad 38 are electrically connected. The wiring 37 and the pad 38 enable transmission and reception of signals with the element region, and can supply a voltage or the like to the element region.

A passivation layer 36 is provided on the surface 34 a of the redistribution layer 34. In the passivation layer 36, a terminal 30a is provided on the pad 38 provided on the wiring 37. The terminal 30 a is electrically connected to the semiconductor layer 32.
Further, although the wiring 37 is not provided in the rewiring layer 34, only the pad 38 is provided. The terminal 30 b is provided on the pad 38 which is not provided on the wiring 37. The terminal 30 b is not electrically connected to the semiconductor layer 32.
The anisotropic conductive film 10 is provided on the terminals 30a and 30b to be electrically connected to other members.

The end face 30c of the terminal 30a and the end face 30c of the terminal 30b both coincide with the surface 36a of the passivation layer 36 and are so-called flush state, and the terminals 30a and 30b protrude from the surface 36a of the passivation layer 36 Absent. The terminal 30a and the terminal 30b shown in FIG. 3 are made flush with the surface 36a of the passivation layer 36, for example, by polishing.

The terminals 30 a and the terminals 30 b are not limited to being flush with the surface 36 a of the passivation layer 36, and may protrude with respect to the surface 36 a of the passivation layer 36 as shown in FIG. 4. In this case, the amount δ of protrusion of the terminals 30 a and 30 b with respect to the surface 36 a of the passivation layer 36 is preferably 1/3 or less of the thickness of the anisotropic conductive film 10. The amount of protrusion δ is not limited to the terminal, and the same applies to electrodes and wires connected by the anisotropic conductive film 10.
If the amount of protrusion δ is 1/3 or less of the thickness of the anisotropic conductive film 10, it is stably connected to the anisotropic conductive film 10 without cracking or adhesion failure.
If the protrusion amount δ exceeds 1/3 of the thickness of the anisotropic conductive film 10, cracking, adhesion failure, or the like may occur, and the connection stability with the anisotropic conductive film 10 may be impaired.
Moreover, when connecting with two electrodes by the anisotropic conductive film 10, in order to make protrusion amount (delta) 1/3 or less of the thickness of the anisotropic conductive film 10, at least one electrode should just be sufficient. In this case, it is preferable to connect the anisotropic conductive film 10 from an electrode whose protrusion amount δ is 1/3 or less of the thickness of the anisotropic conductive film 10.
In addition, the thickness of the anisotropic conductive film 10 is the thickness T of the above-mentioned curable resin layer.

The protrusion amount δ described above acquires an image of a cross section including the terminal 30a and the terminal 30b in the semiconductor elements 42 and 44, acquires the contour of the terminal 30a and the contour of the terminal 30b by image analysis, and the end surface 30c of the terminal 30a The end face 30c of the terminal 30b is detected. The distance between the surface 36a of the passivation layer 36 and the end face 30c of the terminal 30a and the distance between the end face of the terminal 30b and the end 30c can be obtained.
The end surface 30c of the terminal 30a and the end surface 30c of the terminal 30b are both surfaces farthest from the surface 36a of the passivation layer 36, and are generally called a top surface.

The semiconductor layer 32 is not particularly limited as long as it is a semiconductor, and is made of silicon or the like, but is not limited thereto, and may be silicon carbide, germanium, gallium arsenide, gallium nitride or the like. Good.
The redistribution layer 34 is made of an electrically insulating material, such as polyimide.
The passivation layer 36 is also made of an electrically insulating material, such as silicon nitride (SiN) or polyimide.
The wires 37 and the pads 38 are made of a conductive material, such as copper, copper alloy, aluminum, or aluminum alloy.

The terminal 30 a and the terminal 30 b are configured to be conductive similarly to the wiring 37 and the pad 38, and are configured by, for example, a metal or an alloy. Specifically, the terminals 30a and 30b are made of, for example, copper, a copper alloy, aluminum, or an aluminum alloy.
The terminals 30a and the terminals 30b may be of any type as long as they have conductivity, and are not limited to being made of metal or alloy, and are used for what are called terminals, electrodes or electrode pads in the semiconductor device field. The materials to be used can be suitably used.
Also in the terminal 30a and terminal 30b, and the width _{W L} of the width _{W L} and the terminal 30b of the terminal 30a, the interval _{W S} spacing _{W S} and terminal 30b of the terminal 30a is desired to narrow, and the width _{W L} of the terminal 30a the interval _{W S} spacing _{W S} and terminal 30b of width _{W L} and the terminal 30a of the terminal 30b, is preferably less than 10μm, respectively, and more preferably less than 5 [mu] m, more preferably less than 1 [mu] m. Even in this case, by using the anisotropic conductive film 10, excellent conductivity and adhesiveness can be obtained.

Next, connection is made to another configuration of the stack.
As the laminate, as in the laminate 40 shown in FIG. 5, the semiconductor element 42 and the semiconductor element 44 are joined in the layering direction Ds via the anisotropic conductive film 10 exhibiting anisotropic conductivity, so that the semiconductor element is obtained. 42 and the semiconductor element 44 may be electrically connected. The laminate 40 shown in FIG. 5 is excellent in the conductivity and adhesion between the semiconductor element 42 and the semiconductor element 44.
The semiconductor elements 42 and 44 have a plurality of terminals 45, for example, as shown in FIG. Even if the size of the terminal 45 is a rectangle of 10 μm on a side and the distance between the terminals 45 is 10 μm, the semiconductor element 42 and the semiconductor element 44 can be electrically used by using the above-described anisotropic conductive film 10 It can be connected.
As a laminate 40 shown in FIG. 7, the semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 are stacked and joined in the stacking direction Ds via the anisotropic conductive film 10 and electrically connected to each other. It is also good. In the laminated body 40 shown in FIG. 7, the conductivity and adhesion between the semiconductor element 42, the semiconductor element 44 and the semiconductor element 46 are excellent.
Moreover, it may function as an optical sensor like the laminated body 40 shown in FIG. In the laminate 40 shown in FIG. 8, the semiconductor element 52 and the sensor chip 54 are stacked in the stacking direction Ds via the anisotropic conductive film 10. Further, the sensor chip 54 is provided with a lens 56. The laminate 40 shown in FIG. 8 is excellent in conductivity and adhesion between the semiconductor element 52 and the sensor chip 54.

The semiconductor element 52 has a logic circuit formed therein, and the configuration thereof is not particularly limited as long as the signal obtained by the sensor chip 54 can be processed.
The sensor chip 54 includes an optical sensor that detects light. The light sensor is not particularly limited as long as it can detect light, and for example, a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor is used.
In the laminate 40 shown in FIG. 8, the semiconductor element 52 and the sensor chip 54 are connected via the anisotropic conductive film 10, but the present invention is not limited to this. The semiconductor element 52 and the sensor chip 54 May be directly joined.
The configuration of the lens 56 is not particularly limited as long as it can condense light on the sensor chip 54. For example, a lens called a microlens is used.

The above-described semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 have, for example, the above-described semiconductor layer 32, and have an element region (not shown).
The element region is a region in which various element configuration circuits such as a capacitor, a resistor, and a coil are formed to function as an electronic element. In the element region, for example, a memory circuit such as a flash memory, a region where a logic circuit such as a microprocessor and a field-programmable gate array (FPGA) is formed, a communication module such as a wireless tag, Area. In the element region, other than this, a transmitter circuit or MEMS (Micro Electro Mechanical Systems) may be formed. The MEMS is, for example, a sensor, an actuator, an antenna or the like. The sensors include, for example, various sensors such as acceleration, sound and light.

As described above, in the element region, an element configuration circuit and the like are formed, and in the semiconductor element, the rewiring layer 34 (see FIG. 3) is provided as described above.
In the stacked body, for example, a combination of a semiconductor element having a logic circuit and a semiconductor element having a memory circuit can be employed. Further, all the semiconductor elements may have memory circuits, or all the semiconductor elements may have logic circuits. The combination of semiconductor elements in the stack 40 may be a combination of a sensor, an actuator, an antenna, and the like, and a memory circuit and a logic circuit, and is appropriately determined in accordance with the application of the stack 40 and the like.

Further, the semiconductor element is not particularly limited, and specific examples thereof include the following. Examples of the semiconductor element include logic integrated circuits such as application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), and application specific standard products (ASSPs), as well as those described above. Moreover, microprocessors, such as CPU (Central Processing Unit) and GPU (Graphics Processing Unit), are mentioned, for example. Also, for example, a dynamic random access memory (DRAM), a hybrid memory cube (HMC), a magnetoresistive random access memory (MRAM), a phase-change memory (PCM), a resistance random access memory (ReRAM), and a ferroelectric random access memory (FeRAM). , Flash memory and the like. Also, for example, analog integrated circuits such as light emitting diodes (LEDs), power devices, direct current (DC) -direct current (DC) converters, and insulated gate bipolar transistors (IGBTs) can be cited.
Furthermore, as a semiconductor element, for example, GPS (Global Positioning System), FM (Frequency Modulation), NFC (Near Field Communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network) Etc., discrete elements, passive devices, surface acoustic wave (SAW) filters, radio frequency (RF) filters, integrated passive devices (IPD), and the like. The semiconductor element may be a TEG (Test Element Group) chip.
Besides semiconductor devices, interposers and TAB (Tape Automated Bonding) tapes can also be connected.
Furthermore, it can be used for connection with the electrode pad of a transparent conductive film, and the electrode pad of FPC (Flexible Printed Circuits) as a to-be-connected object. In addition, the present invention can also be used to connect and mount an IC (Integrated Circuit) chip directly on an electrode pad of a transparent conductive film. The transparent conductive film is not particularly limited as long as it has low visibility and is hard to be recognized. For example, a conductive film in which a substance such as ITO itself is transparent may be used. It may be a conductive film made of a metal wire. Moreover, as a transparent conductive film, the various conductive films used for a touch sensor etc. can be utilized suitably, for example.
Further, the IC chip has a plurality of terminals 45 as shown in FIG. 6, for example, similarly to the semiconductor elements 42 and 44.

Next, the 1st example of the manufacturing method of the laminated body using an anisotropic conductive film is demonstrated.
A first example of a method of manufacturing a laminate using an anisotropic conductive film relates to a chip-on-wafer, and shows a method of manufacturing a laminate 40 shown in FIG.
FIG. 9 to FIG. 11 are schematic views showing a first example of a method for manufacturing a laminate using the anisotropic conductive film of the embodiment of the present invention in the order of steps.
In the first example of the method of manufacturing a laminate using an anisotropic conductive film, first, a semiconductor element 44 having the anisotropic conductive film 10 provided on the surface 44 a is prepared.
Next, the semiconductor element 44 is disposed with the anisotropic conductive film 10 facing the first semiconductor wafer 60. Next, alignment of the semiconductor element 44 is performed on the first semiconductor wafer 60 using the alignment mark of the semiconductor element 44 and the alignment mark of the first semiconductor wafer 60.
Regarding the alignment, the configuration is particularly limited if digital image data can be obtained for the image or the reflected image of the alignment mark of the first semiconductor wafer 60 and the image or the reflected image of the alignment mark of the semiconductor element 44. However, known imaging devices can be used as appropriate.

Next, as shown in FIG. 9, the semiconductor element 44 is placed on the element region of the first semiconductor wafer 60 via the anisotropic conductive film 10, and for example, a predetermined pressure is applied, and it is determined in advance. It is heated to a temperature, held for a predetermined time, and temporarily crimped. This is performed for all the semiconductor elements 44, and as shown in FIG. 10, all the semiconductor elements 44 are temporarily pressure-bonded to the element region of the first semiconductor wafer 60.

Next, in a state where all the semiconductor elements 44 are temporarily pressure-bonded to the element region of the first semiconductor wafer 60, a predetermined pressure is applied to the semiconductor elements 44, and the semiconductor elements 44 are heated to a predetermined temperature. The plurality of semiconductor elements 44 are all joined together to the element region of the first semiconductor wafer 60 while holding for a predetermined time. This bonding is called full pressure bonding. Thus, the terminal (not shown) of the semiconductor element 44 is bonded to the anisotropic conductive film 10, and the terminal (not shown) of the first semiconductor wafer 60 is bonded to the anisotropic conductive film 10.
Next, as shown in FIG. 11, the first semiconductor wafer 60 to which the semiconductor element 44 is bonded via the anisotropic conductive film 10 is separated into individual element regions by dicing or laser scribing or the like. Thereby, the laminated body 40 with which the semiconductor element 42, the anisotropic conductive film 10, and the semiconductor element 44 were joined can be obtained.
As described above, in the full pressure bonding, by collectively bonding the plurality of semiconductor elements 44, the tact time can be reduced and the productivity can be enhanced.

The temporary pressure bonding is to temporarily attach the anisotropic conductive film to a connection target such as a semiconductor element.
In addition, since a position shift will arise in the process of a conveyance process etc. and the process of a bond which joins when temporary press-fit strength is weak, temporary press-fit strength becomes important.
Moreover, the temperature condition and pressurization condition in a temporary pressure bonding process are not specifically limited, For example, according to a curable resin layer, it sets suitably.
In temporary pressure bonding, for example, the anisotropic conductive film 10 is placed on a semiconductor element to be connected or a wiring substrate, and pressure and temperature are temporarily pressure bonded over an appropriate time. Depending on the pressure, temperature, and time, the anisotropic conductive film 10 may be cured, and curing may proceed before the final pressing, and the final pressing may not be performed, so the temperature of the temporary pressing may not accelerate the curing reaction. It is desirable that the temperature of the

The temperature condition in the main pressure bonding is not particularly limited, but is preferably a temperature higher than the temperature of the temporary pressure bonding, and specifically, more preferably 130 to 200 ° C.
Further, the pressurizing condition in the main pressure bonding is not particularly limited, but is appropriately set according to the purpose, and preferably 40 to 100 MPa.
The time of the main pressure bonding is not particularly limited, but may be appropriately set according to the purpose, and is preferably 3 to 15 seconds.

In the case of temporary pressure bonding where individual semiconductor elements are bonded together, including the semiconductor element 44 and the first semiconductor wafer 60 described above, Toray Engineering, Shibuya Kogyo Co., Ltd., Shinkawa Co., Ltd., and Yamaha Motor Co., Ltd. The equipment of each company such as can be used.
As an apparatus used for the above-mentioned main pressure bonding, for example, wafers of Mitsubishi Heavy Industries Machine Tools, Bond Tech, PMT, Ayumi Kogyo, Tokyo Electron (TEL), EVG, SUSS Microtech Co., Ltd. (SUSS), Musashino Engineering etc. Bonding devices can be used.
At the time of each bonding of temporary pressure bonding and full pressure bonding, the atmosphere at the time of bonding, heating temperature, pressing force (load), and processing time can be mentioned as control factors, but conditions suitable for devices such as semiconductor elements used should be selected. it can.
The atmosphere at the time of bonding can be selected from under the atmosphere, an inert atmosphere such as a nitrogen atmosphere, and a vacuum state.

The 2nd example of the manufacturing method of the layered product using an anisotropic conductive film is explained.
FIG. 12 to FIG. 14 are schematic views showing, in the order of steps, a second example of a method of manufacturing a laminate using the anisotropic conductive film of the embodiment of the present invention.
The second example of the method of manufacturing a laminate using an anisotropic conductive film is different from the first example of the method of manufacturing a laminate using an anisotropic conductive film in three semiconductor elements 42 and 44. , 46 are the same as the first example of the method for manufacturing a laminate using an anisotropic conductive film, except that 46 is laminated and joined via the anisotropic conductive film 10. For this reason, the detailed description about the manufacturing method common to the 2nd example of the manufacturing method of a layered product is omitted.
In the semiconductor element 44, an alignment mark (not shown) is provided on the back surface 44b, and a terminal (not shown) is provided. Furthermore, the anisotropic conductive film 10 is provided on the surface 44 a of the semiconductor element 44. In addition, the anisotropic conductive film 10 is provided on the surface 46 a of the semiconductor element 46 as well.

As shown in FIG. 12, with all the semiconductor elements 44 being temporarily press-bonded to the element region of the first semiconductor wafer 60 via the anisotropic conductive film 10, alignment marks on the back surface 44b of the semiconductor elements 44, The semiconductor element 46 is aligned with the semiconductor element 44 using the alignment mark of the semiconductor element 46.

Next, as shown in FIG. 13, the semiconductor element 46 is temporarily pressure-bonded to the back surface 44 b of the semiconductor element 44 via the anisotropic conductive film 10. Next, all the semiconductor elements 44 are temporarily pressure-bonded to the element region of the first semiconductor wafer 60 through the anisotropic conductive film 10, and the semiconductor elements through all the semiconductor elements 44 through the anisotropic conductive film 10. In a state in which 46 is temporarily pressure-bonded, the main pressure-bonding is performed under predetermined conditions. Thereby, the semiconductor element 44 and the semiconductor element 46 are joined via the anisotropic conductive film 10, and the semiconductor element 44 and the first semiconductor wafer 60 are joined via the anisotropic conductive film 10. The semiconductor element 44, the semiconductor element 46 and the terminal (not shown) of the first semiconductor wafer 60 are bonded to the anisotropic conductive film 10.
Next, as shown in FIG. 14, the first semiconductor wafer 60 in which the semiconductor element 44 and the semiconductor element 46 are joined via the anisotropic conductive film 10 is divided into, for example, dicing or laser scribing for each element area. Individualize by Thereby, the laminated body 40 in which the semiconductor element 42, the semiconductor element 44 and the semiconductor element 46 are joined via the anisotropic conductive film 10 can be obtained.

Next, a third example of a method of manufacturing a laminate using an anisotropic conductive film will be described.
The third example of the method of manufacturing a laminate using an anisotropic conductive film relates to a wafer on wafer, and shows a method of manufacturing a laminate 40 shown in FIG.
FIGS. 15 to 17 are schematic views showing, in the order of steps, a third example of a method of manufacturing a laminate using the anisotropic conductive film of the embodiment of the present invention.
The third example of the method for manufacturing a laminate using an anisotropic conductive film is different from the first example of the method for manufacturing a laminate, in that the first semiconductor wafer 60 via the anisotropic conductive film 10 is used. And the second semiconductor wafer 62 are the same as the first example of the method of manufacturing a laminated body. For this reason, the detailed description about the manufacturing method common to the 1st example of the manufacturing method of a layered product is omitted. Moreover, since it is as the above-mentioned description also about the anisotropic conductive film 10, the detailed description is abbreviate | omitted.

First, a first semiconductor wafer 60 and a second semiconductor wafer 62 are prepared. An anisotropic conductive film 10 is provided on either the surface 60 a of the first semiconductor wafer 60 or the surface 62 a of the second semiconductor wafer 62. For example, as shown in FIG. 15, the anisotropic conductive film 10 is provided on the surface 60 a of the first semiconductor wafer 60. In this case, the anisotropic conductive film 10 is, for example, temporarily pressure-bonded to the surface 60 a of the first semiconductor wafer 60.
Next, the surface 60 a of the first semiconductor wafer 60 and the surface 62 a of the second semiconductor wafer 62 are opposed to each other. Then, using the alignment mark of the first semiconductor wafer 60 and the alignment mark of the second semiconductor wafer 62, the alignment of the second semiconductor wafer 62 with respect to the first semiconductor wafer 60 is performed.
Next, the surface 60a of the first semiconductor wafer 60 and the surface 62a of the second semiconductor wafer 62 are made to face each other, and the first semiconductor wafer 60 and the second semiconductor wafer 60 are formed as shown in FIG. The semiconductor wafer 62 is bonded via the anisotropic conductive film 10. In this case, the main pressure bonding is performed after the temporary pressure bonding.

Next, as shown in FIG. 17, in a state where the first semiconductor wafer 60 and the second semiconductor wafer 62 are bonded via the anisotropic conductive film 10, for example, dicing or laser scribing is performed for each element region. Individualize by etc. Thereby, the laminated body 40 by which the semiconductor element 42 and the semiconductor element 44 were joined through the anisotropic conductive film 10 can be obtained. Thus, the laminate 40 can be obtained even using a wafer on wafer.
The individualization is as described above, and thus the detailed description is omitted.
In addition, as shown in FIG. 17, it is necessary to make the first semiconductor wafer 60 and the second semiconductor wafer 62 thinner in a state where the first semiconductor wafer 60 and the second semiconductor wafer 62 are bonded. A semiconductor wafer can be thinned by chemical mechanical polishing (CMP) or the like.

In the third example of the method of manufacturing a laminate using an anisotropic conductive film, the two-layer structure in which the semiconductor element 42 and the semiconductor element 44 are laminated is described as an example, but the present invention is not limited thereto. Of course, three or more layers may be used as described above. In this case, as in the second example of the method of manufacturing laminated body 40 described above, an alignment mark (not shown) and a terminal (not shown) are provided on back surface 62b of second semiconductor wafer 62. It is possible to obtain a stack 40 of layers or more.
Since the stacked body 40 can be manufactured using a chip-on-wafer, the yield can be maintained and the manufacturing loss can be reduced by bonding only non-defective semiconductor chips to non-defective parts in the semiconductor wafer. .

The semiconductor element 44 provided with the above-mentioned anisotropic conductive film 10 can be formed using the anisotropic conductive film 10 and a semiconductor wafer provided with a plurality of element regions (not shown). The element region is provided with an alignment mark (not shown) for alignment and a terminal (not shown) as described above.

First, a predetermined pressure is applied, and the substrate is heated to a predetermined temperature and held for a predetermined time to bond the anisotropic conductive film 10 to the element region of the semiconductor wafer.
Next, the semiconductor wafer is singulated for each element region to obtain a plurality of semiconductor elements 44.
Although the semiconductor element 44 provided with the anisotropic conductive film 10 is described as an example, the semiconductor element 46 provided with the anisotropic conductive film 10 is also the second one provided with the anisotropic conductive film 10 The anisotropic conductive film 10 can be provided on the semiconductor wafer 62 in the same manner as the semiconductor element 44 on which the anisotropic conductive film 10 is provided.

The junction of semiconductor devices has been described in the form of joining another semiconductor element to the semiconductor element, but the present invention is not limited to this, and it is an aspect of joining a plurality of semiconductor elements to one semiconductor element. It may be in the form of one to multiple. In addition, a plurality of pairs of semiconductor devices may be bonded to a plurality of semiconductor devices.

Hereinafter, the anisotropic conductive film 10 will be described more specifically.
[Conductive particles]
The conductive particles are particles containing a conductive material described later contained in the curable resin layer. The conductive material preferably exposes the particle surface. By being exposed, conduction with the connection target can be stably ensured.
The average particle diameter A of the conductive particles is preferably in the range of 5% to 90% of the width of the line, more preferably in the range of 15% to 70%, and most preferably in the range of 30% to 50%.
<Conductive material>
The conductive material constituting the conductive particles is not particularly limited, and metal particles, metal-coated resin particles and the like are used.
Examples of the metal particles include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), and nickel (Ni). Other than this, it is also possible to use particles in which core particles of nickel are coated with gold plating.
The metal-coated resin particles are, for example, particles in which core particles of plastic particles are coated with metal plating of nickel or gold.

<Content of conductive particles>
The content of the conductive particles is expressed in volume%.
The content of the conductive particles is preferably 30 to 95% by volume based on the total volume of the curable resin layer and the conductive particles.
The content of conductive particles is Cs. Also, let S be the cross-sectional area of the surface parallel to the width of the line of the curable resin layer and orthogonal to the surface of the curable resin layer, and L be the length orthogonal to the line width of the curable resin layer. . The length L does not have to be taken from the end in the direction orthogonal to the line width of the curable resin layer, and the other end may be adopted, and an arbitrary value containing five or more conductive particles may be employed. it can.
Further, the number of conductive particles is Ns. The average particle radius of the conductive particles is _RA . In this case, the volume V of the sum of the volumes of the curable resin layer and the conductive particles is V = S × L. The volume Vs of the conductive particles ^{_{is, Vs = (4πR A 3/}} 3) is × Ns. The content Cs (volume%) of the conductive particles is Cs = Vs / V.

Five sections of a plane parallel to the width direction of the line of the curable resin layer and perpendicular to the length direction of the line are cut out, and a cross-sectional image of the cut out section is acquired using a scanning electron microscope, and five The cross-sectional area and thickness of the curable resin layer are calculated from the cross-sectional image. Let the average value of the obtained cross-sectional area and thickness be the cross-sectional area S and the thickness T of a curable resin layer.
Further, the average particle diameter A of the conductive particles is a plane parallel to the width direction of the line of the curable resin layer and perpendicular to the length direction of the line using the scanning electron microscope as described above. The center part of arbitrary five conductive particles is cut out, and it is set as the average value of the length of the thickness direction of the curable resin layer of the conductive particle of the cut-out section.
The mean particle radius R _A is a half value of the mean value of the mean particle diameter A obtained as described above.
The number of particles of the conductive particles is a value obtained by measuring the number of particles of the curable resin layer included in the plane parallel to the surface of the curable resin layer in the central portion in the thickness direction using a scanning electron microscope .

[Curable resin layer]
The curable resin layer preferably has a bonding property to the object to be connected. The curable resin layer exhibits fluidity in a temperature range of 50 ° C. to 200 ° C., for example, and is preferably one which cures at 200 ° C. or higher.
The curable resin layer contains at least a curable resin. The curable resin has electrical insulation. Electrical insulation means that the electrical resistance is 10 ¹⁰ Ω · m or more.
Examples of the curable resin include resins that are cured by heat or UV light (ultraviolet light). That is, thermosetting resins and photocurable resins can be mentioned.
Examples of the thermosetting resin include epoxy resins, phenol resins, polyimide resins, polyester resins, polyurethane resins, bismaleimide resins, melamine resins, phenoxy resins, and isocyanate resins.
Examples of the photocurable resin include polymers in which a carbon-carbon double bond is introduced into the polymer side chain or main chain or at the main chain terminal.
Among them, a thermosetting resin is preferable because adhesion to a connection target is further enhanced, and a polyimide resin and / or an epoxy resin is preferable because insulation reliability is further improved and chemical resistance is excellent.
The curable resin may be used alone or in combination of two or more.

The curable resin layer may contain components other than the curable resin.
For example, the curable resin layer may contain a polymerization initiator. The polymerization initiator includes a thermal polymerization initiator and a photopolymerization initiator. Among them, thermal cationic polymerization initiators are preferred. Examples of the cationic photopolymerization initiator include aromatic diazonium salts, sulfonium salts, iodonium salts, phosphonium salts, benzoin tosylate, and o-nitrobenzyl tosylate.

The curable resin layer may also contain a curing agent. As a curing agent, aromatic amines such as diaminodiphenylmethane and diaminodiphenyl sulfone, aliphatic amines, imidazole derivatives such as 4-methylimidazole, dicyandiamide, tetramethylguanidine, thiourea addition amine, methylhexahydrophthalic anhydride, etc. And carboxylic acid anhydrides of

As an additive contained in a curable resin layer, a silane coupling agent, antioxidant, a migration prevention agent, a filler etc. are mentioned besides the above.

[Method for producing anisotropic conductive film]
An anisotropic conductive film prepares the raw material liquid which mixed the component of the above-mentioned curable resin layer, mixes the conductive particle separately prepared to a raw material liquid, disperses it, cooling a raw material liquid. The dispersion treatment is carried out using a high-speed stirrer having shear force, or a homogenizer, which can sufficiently stir the conductive particles so as not to aggregate. The apparatus that performs the distributed processing is not particularly limited to the above-described apparatus, and can be selected as appropriate. The reason why the dispersion treatment is performed while cooling is that high dispersion heat may be generated when dispersion is performed by strong stirring to obtain a good dispersion state. The extent to which the heat of stirring is appropriate depends on the type of the curable resin, and is accordingly determined according to the curable resin.
The dispersed and mixed solution is applied onto a release film to a specified thickness, and then placed in an oven and dried. Thereby, an anisotropic conductive film is obtained.

The method of changing the thickness of the anisotropic conductive film is not particularly limited, but it is desirable that the thickness difference is already attached after application. When the application thickness is changed by the applicator, the change can be made by changing the gap between the release film and the applicator. Moreover, the application thickness can be changed also by a method of scraping off the liquid after the application. In the case of quantitative application from the coating head, the thickness can also be changed by changing the relative speed between the substrate and the coating head and the supply speed. Furthermore, the thickness can be changed even by application using an inkjet method. The coating method at the time of forming an anisotropic conductive film can be suitably determined according to the objective and curable resin etc.

The present invention is basically configured as described above. As mentioned above, although the anisotropic conductive film and laminated body of this invention were demonstrated in detail, this invention is not limited to the above-mentioned embodiment, In the range which does not deviate from the main point of this invention, various improvement or change Of course it is also good.

Hereinafter, the present invention will be more specifically described by way of examples. The materials, reagents, amounts used, substance amounts, proportions, treatment contents, treatment procedures, etc. shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Accordingly, the scope of the present invention should not be construed as limited by the specific examples shown below.

In this example, with respect to the anisotropic conductive films of Example 1, Comparative Example 1 and Comparative Example 2, the stability of conduction and the adhesion were evaluated. In addition, based on the evaluation of the stability of the conduction and the evaluation of the adhesion, it was comprehensively evaluated. The evaluation results of the stability of the conduction, the adhesion, and the comprehensive evaluation are shown in Table 1 below. Hereinafter, the stability of conduction, the adhesion, and the evaluation of the overall evaluation will be described.

The stability of conduction will be described.
<Evaluation of stability of conduction>
With respect to the anisotropic conductive film, resistance values at 30 points were measured. The degree of stability of the resistance value was evaluated by the evaluation criteria shown below. The resistance value was measured by a four-terminal method using a digital multimeter.
Evaluation criteria A: No connection failure.
B: Bad connection is less than 10%.
C: Bad connection exceeds 10%.

The adhesion will be described.
<Evaluation of adhesion>
With the glass surface of the bonded assembly facing down, the TEG (Test Element Group) chip was pinched with tweezers and lifted, and the resistance to the lifting was evaluated in an erosion finger manner. It carried out 3 times on each condition, and in view of the resistance, it evaluated by the evaluation criteria shown below. The conjugate will be described later.
Evaluation criteria A: There is resistance to lifting.
B: Some have resistance to lifting and some have no resistance and peel off.
C: Remove all without resistance.

Describe comprehensive evaluation.
<Overall evaluation>
In the comprehensive evaluation, of the evaluation of the stability of the conduction and the evaluation of the adhesion, when both of the evaluations are “A”, the comprehensive evaluation is “A”.
Moreover, in comprehensive evaluation, when one evaluation is "A" among evaluation of the stability of conduction | electrical_connection, and evaluation of adhesive force, the other evaluation result was made evaluation of general evaluation. For example, if the evaluation of the stability of conduction is "A" and the evaluation of adhesion is "B", the comprehensive evaluation is "B".
Further, in the comprehensive evaluation, among the evaluation of the stability of the conduction and the evaluation of the adhesion, in the case where the evaluation "A" does not exist, the comprehensive evaluation is "C".

[Junction]
As a wiring substrate, a glass substrate having a thickness of 700 μm on which an ITO (Indium Tin Oxide) comb wiring was formed was used. As an electronic component, a TEG (Test Element Group) chip (size: 5 mm × 10 mm, thickness: 0.5 mm, gold-plated bump size: 5 μm × 30 μm, bump height: 5 μm, space between bumps: 5 μm, bump number: 30) Were used.
Place an anisotropic conductive film on the wiring of the wiring board, face each other in such a way that the electrode terminals of the electronic component hit the top of the comb-shaped wiring, and use a thermally conductive Teflon (registered trademark) sheet with an average thickness of 50 μm as a buffer. Then, heating and pressure bonding were performed with a heating tool at a temperature of 180 ° C., a pressure of 60 MPa, and a time of 5 seconds to obtain a bonded body.

Hereinafter, Example 1, Comparative Example 1, and Comparative Example 2 will be described.
Example 1
The anisotropic conductive film of Example 1 will be described.
[Anisotropic conductive film]
(Curable resin component)
Phenoxy resin (Nippon Steel Sumikin Chemical Co., Ltd., YP-50) 40 parts by mass Liquid epoxy resin (Mitsubishi Chemical Co., Ltd., jER 828) 55 parts by mass Thermal cationic polymerization initiator (Sanshin Chemical Industry Co., Ltd., SI-60L) 4 parts by mass 1 part by mass of silane coupling agent (Shin-Etsu Chemical Co., Ltd., KBM-403) A thermally polymerized composition (curable resin component) containing the above was prepared.
(Conductive particles)
Gold plated nickel core particles having an average particle diameter of 1.3 μm were used.
(Curable resin layer)
Preparation of Liquid Curable Resin Component The conductive plate-like particles were mixed and dispersed in the above-mentioned curable resin component. The amounts of the curable resin component and the conductive particle component were adjusted such that the content of the conductive particles was 10% by volume.
(Quantity ratio)
Curable resin component 35 parts by mass Conductive particle component 22 parts by mass (mixture and dispersion)
The curable resin component and the conductive particle component were respectively charged in appropriate amounts into a homogenizer (ULTRA-TURRAX (registered trademark)) manufactured by IKA Co., and subjected to mixing and dispersion treatment. In addition, since the heat | fever by stirring arose in that case, the cooling mechanism was equipped and it kept at temperature 60 degrees C or less.
<Preparation of a curable resin coating film>
The liquid curable resin component described above is coated on a PET (polyethylene terephthalate) film to which a peeling function has been imparted in advance by treating it with silicone so that the thickness after drying is 1.3 μm, and the temperature is 70 ° C. Dried for 5 minutes. That is, the thickness T of the curable resin layer was T = A. In Example 1, the content of the conductive particles was 10% by volume.

(Comparative example 1)
Comparative Example 1 was the same as Example 1 except that the thickness T of the curable resin layer was 0.9 A in comparison with Example 1.
(Comparative example 2)
Comparative Example 2 was the same as Example 1 except that the thickness T of the curable resin layer was set to 1.3 A as compared with Example 1.

As shown in Table 1, Example 1 was superior to Comparative Example 1 and Comparative Example 2 in the stability of the conduction and the adhesion.
In Comparative Example 1, the thickness of the curable resin layer is smaller than that of the conductive particles. In this case, a part of the conductive particles is exposed from the curable resin layer, and the conductive particles are easily in contact with the electrode to be connected. However, since the contact between the electrode and the curable resin layer becomes difficult, it becomes difficult to secure the adhesion. Because the electrode was recessed by the conductive particles, the electrode and the curable resin layer approached and were bonded.
In Comparative Example 2, the thickness of the curable resin layer is thicker than the conductive particles. In this case, the electrode and the curable resin layer are in direct contact with each other, and the adhesion becomes good. However, the probability of extruding the conductive particles is increased, the probability of the conductive particles staying on the electrode is decreased, and the stability of conduction is deteriorated.

DESCRIPTION OF SYMBOLS 10 Anisotropic conductive film 12 Conductive particle 14 Curable resin layer 15 Peeling layer 20 1st wiring board 21, 25 base material 22, 26 electrode 24 2nd wiring board 30a, 30b terminal 30c end face 32 semiconductor layer 32a, 34a, 36a surface 34 rewiring layer 36 passivation layer 37 wiring 38 pad 40 laminated body 42, 44, 46, 52 semiconductor element 44a, 46a surface 44b, 62b back surface 45 terminal 54 sensor chip 56 lens 60 first semiconductor wafer 60a, 62a surface 62 second semiconductor wafer 100 anisotropic conductive film 104 curable resin layer A average particle diameter D thickness direction Ds lamination direction G interval T thickness δ protrusion amount W _L width W _S interval

Claims (6)

1. Conductive particles,
   And a curable resin layer containing the conductive particles,
   An anisotropic conductive film in which A ≦ T ≦ 1.2 A and A ≦ 10 μm, where A represents an average particle diameter of the conductive particles and T represents a thickness of the curable resin layer.
2. The anisotropic conductive film according to claim 1, wherein a content of the conductive particles is 3 to 10% by volume.
3. 3. The anisotropic conductive film according to claim 1, wherein A ≦ G, where G represents a distance between the conductive particles adjacent to each other.
4. The anisotropic conductive film according to any one of claims 1 to 3, wherein the conductive particles are made of metal.
5. An anisotropic conductive film according to any one of claims 1 to 4;
   And a member having an electrode or a wire;
   The laminated body with which the said electrode or wiring of the said member, and the said anisotropic conductive film are electrically connected.
6. The electrode or the wire protrudes with respect to the surface of the member,
   The layered product according to claim 5 whose amount of projection of said electrode or said wiring is 1/3 or less of thickness of said anisotropic conductive film.

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