JPWO2019044588A1 - Manufacturing method of thin plate-shaped member and manufacturing equipment of thin plate-shaped member - Google Patents

Abstract

A laser irradiation step of irradiating a plate-shaped member (WF) with a laser (LB) and a plate-shaped member (WF) divided along a dividing surface (DP) to at least make the first thin plate-shaped member and the second thin plate. In the step of irradiating the plate-shaped member (WF) with a laser, which comprises a dividing step of forming a plate-shaped member, a plurality of modified portions are formed on the divided surface (DP) inside the plate-shaped member (WF). The thickness of the first thinned plate-shaped member is smaller than the thickness of the plate-shaped member (WF), and the thickness of the second thinned plate-shaped member is smaller than the thickness of the plate-shaped member (WF). A method for manufacturing a thin plate-shaped member, which is characterized by being small in size.

Description

The present invention relates to a method for manufacturing a thin plate-shaped member and an apparatus for manufacturing a thin plate-shaped member.

Conventionally, as a method for thinning a plate-shaped member, a method of polishing the plate-shaped member is known (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2004-666376

However, in the conventional method as described in Patent Document 1, pure water is required for cooling and cleaning of the semiconductor wafer as a plate-shaped member. The use of pure water is one of the factors that increase the manufacturing cost of thin plate-shaped members. Further, the method of thinning by polishing as described in Patent Document 1 takes time to thin. Further, in the thinning method by polishing as described in Patent Document 1, physical pressure is applied while applying the grindstone to the plate-shaped member, so that the plate-shaped member may be cracked and grinding marks may remain. .. Further, in the thinning method by polishing as described in Patent Document 1, it is required to improve the thickness accuracy of the thinned plate-shaped member.

An object of the present invention is a method for manufacturing a thinned plate-shaped member, which can shorten the time for thinning, suppress cracking of the plate-shaped member, and improve the thickness accuracy without using pure water, and a thinned plate. It is an object of the present invention to provide the manufacturing apparatus of the shape member.

The method for manufacturing a thin plate-shaped member according to one aspect of the present invention includes a laser irradiation step of irradiating the plate-shaped member with a laser, and dividing the plate-shaped member along a dividing surface to at least a first thinned plate. In the step of irradiating the plate-shaped member with a laser, which comprises a dividing step of forming the shaped member and the second thinned plate-shaped member, a plurality of modified portions are formed on the divided surface inside the plate-shaped member. The thickness of the first thinned plate-shaped member is smaller than the thickness of the plate-shaped member, and the thickness of the second thinned plate-shaped member is smaller than the thickness of the plate-shaped member.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, in the laser irradiation step, the position of the laser irradiation point extends from the outer peripheral side of the plate-shaped member to the central portion side of the plate-shaped member. It is preferable to form a plurality of the modified portions on the plate-shaped member at regular intervals while moving the above.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, in the laser irradiation step, a plurality of the modified portions are formed on the plate-shaped member while moving the position of the irradiation point of the laser. It is preferable that the distance between the irradiation points on the outer peripheral side of the plate-shaped member and the distance between the irradiation points on the central portion side of the plate-shaped member are different.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the distance between the irradiation points on the outer peripheral side of the plate-shaped member is larger than the distance between the irradiation points on the central portion side of the plate-shaped member. Is also preferably small.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable that the distance between the irradiation points increases from the outer peripheral side of the plate-shaped member toward the central portion side of the plate-shaped member. ..

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the plate-shaped member includes a first region on the outer peripheral side of the plate-shaped member and a second region on the central portion side of the plate-shaped member. A third region between the first region and the second region, and the first region is irradiated with the laser at a plurality of locations at a first interval to reach the third region. On the other hand, the laser is irradiated to a plurality of places at a third interval, and the laser is irradiated to a plurality of places at a second interval with respect to the second region, and the first interval is the third interval. It is preferably smaller than the interval, and the third interval is preferably smaller than the second interval.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, by moving at least one of the laser irradiator that irradiates the laser and the plate-shaped member, the laser irradiation in the laser irradiation step is performed. It is preferable to move the position of the point.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, by rotating at least one of the laser irradiator and the plate-shaped member, the position of the laser irradiation point in the laser irradiation step can be determined. It is preferable to move it.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable to simultaneously irradiate a plurality of the lasers from the laser irradiator.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the thickness of the plate-shaped member is preferably 3 mm or less.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, at least one of the thickness of the first thin plate-shaped member and the thickness of the second thin plate-shaped member is 500 μm or less. preferable.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable to irradiate the laser along the divided surface at intervals of 1 μm or more and 350 μm or less.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable that the plurality of modified portions overlap each other.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the plurality of modified portions may be separated from each other.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the plate-shaped member has a first surface and a second surface opposite to the first surface, and the laser is used. It is preferable to irradiate from at least one surface side of one surface and the second surface.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the plate-shaped member has a first surface and a second surface opposite to the first surface, and the first surface and the said first surface. It is preferable that a protective sheet is laminated on at least one surface of the second surface.
Further, in the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the plate-shaped member has a first surface and a second surface opposite to the first surface, and the plate-shaped member has a surface opposite to the first surface. Is preferably adsorbed and held on at least one surface side of the first surface and the second surface. When the plate-shaped member is sucked and held, it is more preferable that a protective sheet is laminated on the surface of the plate-shaped member to be sucked and held, and the plate-shaped member is sucked and held via the protective sheet. It is preferable that the plate-shaped member is adsorbed and held in at least one of the laser irradiation step and the dividing step. It is preferable that the plate-shaped member is suction-held by a suction table.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the laser is irradiated from the surface side of the plate-shaped member on which the protective sheet is laminated, and a plurality of the modifications are made inside the plate-shaped member. It is preferable to form a quality part.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, in the dividing step, a plurality of the modified portions are formed by separating the plate-shaped members in the thickness direction of the plate-shaped members. It is preferable that the step is to divide the first thin plate-shaped member and the second thin plate-shaped member with the dividing surface as a boundary.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable that the surface of the plate-shaped member has a circuit.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the first thin plate-shaped member has a first exposed surface that appears due to the division of the plate-shaped member in the dividing step, and the first thinned plate-shaped member. 2 The thin plate-shaped member has a second exposed surface that appears as a result of the division of the plate-shaped member in the dividing step, and a polishing step of polishing at least one of the first exposed surface and the second exposed surface is performed. It is preferable to have.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, a circuit forming step of forming a circuit on at least one surface of the first thin plate-shaped member and the second thin plate-shaped member is further added. It is preferable to prepare.

In the method for producing a thin plate-shaped member according to one aspect of the present invention, the material of the plate-shaped member is selected from the group consisting of silicon, silicon nitride, gallium nitride, silicon carbide, sapphire, gallium arsenide, and glass. Is preferable.

In the method for manufacturing a thin plate-shaped member according to one aspect of the present invention, the plate-shaped member is preferably a wafer.

In the apparatus for manufacturing a thin plate-shaped member according to one aspect of the present invention, at least the first modified portion forming means for forming a plurality of modified portions inside the plate-shaped member and the modified plate-shaped member are first. A thinning plate-shaped member and a dividing means for dividing into a second thinned plate-shaped member are provided, and the modified portion forming means can rotate an arm portion, a laser irradiator that irradiates a laser, and the arm portion. The laser irradiator is supported by a drive unit that is slidably supported by the arm unit.

In the apparatus for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable that the modified portion forming means has a plurality of the laser irradiators.

In the apparatus for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable that the laser irradiator can irradiate a plurality of lasers at the same time.

In the apparatus for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable that the laser irradiator can increase or decrease the irradiation interval between a plurality of the lasers.

In the apparatus for manufacturing a thin plate-shaped member according to one aspect of the present invention, it is preferable to further have a holding means for rotatably supporting the plate-shaped member.

According to one aspect of the present invention, there is provided a method for manufacturing a thin plate-shaped member which can shorten the time for thinning, suppress cracking of the plate-shaped member, and improve the thickness accuracy without using pure water. it can.

It is a top view of the thinning wafer manufacturing apparatus which concerns on one Embodiment of this invention. It is a side view of the 1st sticking means. It is a side view of the 2nd sticking means. It is a schematic of the vertical sectional view of the wafer which shows the division surface inside the wafer. It is a schematic of the vertical cross section of a wafer after forming a plurality of modified parts. It is the cross-sectional schematic diagram of the wafer after forming a plurality of modified parts. It is operation explanatory drawing of the division means. It is operation explanatory drawing of the division means. It is operation explanatory drawing of the division means. It is a schematic vertical cross-sectional view of the wafer after forming a plurality of modified parts in 2nd Embodiment. It is sectional drawing of the cross section of the wafer after forming a plurality of modified parts in 2nd Embodiment. It is the schematic explaining the laser irradiation process in 3rd Embodiment. It is the schematic explaining the laser irradiation process in 3rd Embodiment. It is the schematic explaining the laser irradiation process in 3rd Embodiment. It is a schematic of the vertical sectional view of the wafer after carrying out the laser irradiation process of 3rd Embodiment. It is the schematic explaining the laser irradiation process in 4th Embodiment. It is the schematic explaining the laser irradiation process in 4th Embodiment. It is the schematic explaining the laser irradiation process in 4th Embodiment. It is the schematic explaining the laser irradiation process in 5th Embodiment. It is the schematic explaining the laser irradiation process in 5th Embodiment. It is the schematic explaining the laser irradiation process in 5th Embodiment. It is the schematic explaining the laser irradiation process in another embodiment of this invention. It is operation | movement explanatory drawing of the thinning wafer manufacturing apparatus which concerns on another Embodiment of this invention. It is operation | movement explanatory drawing of the thinning wafer manufacturing apparatus which concerns on another Embodiment of this invention. It is operation | movement explanatory drawing of the thinning wafer manufacturing apparatus which concerns on another Embodiment of this invention. It is operation | movement explanatory drawing of the thinning wafer manufacturing apparatus which concerns on another Embodiment of this invention. It is operation | movement explanatory drawing of the thinning wafer manufacturing apparatus which concerns on another Embodiment of this invention.

[First Embodiment]
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
The X-axis, Y-axis, and Z-axis in the present embodiment are orthogonal to each other, the X-axis and the Y-axis are axes in a predetermined plane, and the Z-axis is an axis orthogonal to the predetermined plane. And. Further, in the present embodiment, the case of viewing from the direction of the arrow AR parallel to the Y axis is used as a reference, and when the direction is indicated, "upper" is parallel to the Z axis in the front direction in FIG. 1, and "lower" is the opposite. The direction, "left" is the X-axis arrow direction, "right" is the opposite direction, "front" is the Y-axis arrow direction, and "rear" is the opposite direction. The same applies to the second embodiment and the like after the first embodiment and modifications of the embodiment.

The thin plate-shaped member is manufactured by using a manufacturing apparatus for the thin plate-shaped member.
FIGS. 1, 2, 3, and 7 show a thin wafer manufacturing apparatus 10 for manufacturing a thin wafer, which is an example of a thin plate-shaped member.
The thinning wafer manufacturing apparatus 10 includes a first sticking means 20, a modified portion forming means 30, a second sticking means 40, and a dividing means 50.
The first attaching means 20 attaches the first adhesive sheet AS1 to the first surface WF1 of the semiconductor wafer (hereinafter, may be simply referred to as “wafer”) WF as a plate-shaped member to form the primary processed product WK1. The wafer WF has a first surface WF1 and a second surface WF2 on the opposite side of the first surface WF1.
The modified portion forming means 30 forms a plurality of modified portion RPs (see FIG. 5) inside the wafer WF. The plurality of modified portion RPs are formed along the division surface DP (see FIG. 4) described later.
The second sticking means 40 sticks the second adhesive sheet AS2 to the second surface WF2 of the wafer WF to form the secondary processed product WK2.
The dividing means 50 divides the wafer WF along the dividing surface DP (see FIG. 4) to form the first thinned wafer WT1 as the first thinned plate-shaped member and the second thinned plate-shaped member. 2 The thinned wafer WT2 is formed.

Hereinafter, as an example of the method for manufacturing the thinned plate-shaped member, a method for manufacturing the first thinned wafer WT1 and the second thinned wafer WT2 by using the thinned wafer manufacturing apparatus 10 will be described.

The wafer WF is not particularly limited as long as it is a wafer made of a material modified by laser irradiation. The laser is preferably a laser that irradiates in the stealth dicing method. The material of the wafer WF is preferably selected from the group consisting of, for example, silicon, silicon nitride, gallium nitride, silicon carbide (SiC), sapphire, gallium arsenide, and glass. The material of the wafer WF is more preferably silicon, and even more preferably single crystal silicon. It is also preferable that the wafer WF is made of a material having a crystal orientation.

According to the wafer manufacturing method according to the present embodiment, it is possible to further reduce the thickness of a plate-shaped member (wafer) having a small thickness, instead of a processing object having a large thickness such as an ingot. The thickness of the wafer WF is preferably 3 mm or less.
At least one of the thicknesses of the first thinning wafer WT1 and the second thinning wafer WT2 formed by dividing the wafer WF is preferably 500 μm or less, and more preferably 300 μm or less. At least one of the thicknesses of the first thinning wafer WT1 and the second thinning wafer WT2 formed by dividing the wafer WF is preferably 10 μm or more, and more preferably 30 μm or more.

The first sticking means 20 includes a support roller 21 for supporting the first raw fabric RS1 in which the first adhesive sheet AS1 is temporarily attached to one surface of the first peeling sheet RL1 and a guide roller for guiding the first raw fabric RS1. 22 and a peeling plate 23 as a peeling member for bending the first peeling sheet RL1 to peel the first adhesive sheet AS1 from the first peeling sheet RL1, and a pinch roller 24B driven by a rotating motor 24A as a driving device. The drive roller 24 that sandwiches the first release sheet RL1, the recovery roller 25 that collects the first release sheet RL1, and the first adhesive sheet AS1 that has been peeled off by the release plate 23 are combined with the first surface WF1 of the wafer WF and the first. A decompression means (not shown) supported by a pressing roller 26 as a pressing means to be pressed and attached to the first ring frame RF1 as a frame member and a slider 27A of a linear motor 27 as a driving device, such as a decompression pump and a vacuum ejector. The wafer WF and the holding table 28 capable of sucking and holding the first ring frame RF1 are provided. The first sticking means 20 sticks the first adhesive sheet AS1 to the wafer WF and the first ring frame RF1 to form the primary processed product WK1.

The reforming portion forming means 30 includes a laser irradiator 32. The laser irradiator 32 is supported by a slider 31A of a linear motor 31 as a drive device.

The second sticking means 40 peels the second adhesive sheet AS2 from the second raw fabric RS2 in which the second adhesive sheet AS2 is temporarily attached to one surface of the second release sheet RL2, and attaches the second adhesive sheet AS2. The secondary processed product WK2 is formed by being attached to the second surface WF2 of the wafer WF and the second ring frame RF2 as the second frame member. The second sticking means 40 has substantially the same configuration as the first sticking means 20, and can be explained by replacing the symbol of the first 2 of the numbering in the first sticking means 20 with 4, so the description thereof is omitted. To do. The second sticking means 40 is configured to suck and hold the primary processed product WK1 and the second ring frame RF2 on the holding table 48.

The dividing means 50 is driven by a lower table 51 having a holding surface 51A capable of adsorbing and holding the wafer WF and the first ring frame RF1 via the first adhesive sheet AS1 by a decompression means (not shown) such as a decompression pump or a vacuum ejector. The right end is supported by the output shaft 52A of the rotary motor 52 as a device, and the wafer WF and the second ring frame RF2 are attracted and held via the second adhesive sheet AS2 by a decompression means (not shown) such as a decompression pump or a vacuum ejector. It comprises an upper table 53 having a possible holding surface 53A. The dividing means 50 has a configuration in which the lower table 51 and the upper table 53 are relatively moved in the rotation direction in the XZ plane, and the wafer WF is separated in the thickness direction of the wafer WF.

The procedure for forming the first thinning wafer WT1 and the second thinning wafer WT2 from the wafer WF in the above-mentioned thinning wafer manufacturing apparatus 10 will be described.
First, with respect to the thin wafer manufacturing apparatus 10 shown by the solid lines in FIGS. 2, 7, 7A, 7B, and 7C in which each member is arranged at the initial position, the operator sets the first raw fabric RS1. After setting the second wafer RS2 as shown in FIGS. 2 and 3, a signal for starting automatic operation is input via an input means such as an operation panel or a personal computer (not shown). Then, when a worker or a transport means (not shown) such as an articulated robot or a belt conveyor places the first ring frame RF1 and the wafer WF on the holding table 28 as shown by the solid line in FIG. 2, the first sticking is performed. The means 20 drives a decompression means (not shown) to suck and hold the first ring frame RF1 and the wafer WF on the upper surface of the holding table 28.

After that, the first sticking means 20 drives the linear motor 27 to move the holding table 28 to the left, and the optical sensor, the imaging means, and the like show that the first ring frame RF1 and the wafer WF have reached a predetermined position. When detected by the detecting means, the rotation motor 24A is driven and the first raw fabric RS1 is fed out according to the moving speed of the holding table 28. As a result, the first adhesive sheet AS1 is peeled from the first peeling sheet RL1 by the peeling plate 23, and is attached to the first ring frame RF1 and the first surface WF1 of the wafer WF by the pressing roller 26 to form the primary processed product WK1. (First pasting step). When the primary processed product WK1 reaches a predetermined position indicated by the alternate long and short dash line in FIG. 2, the first attaching means 20 stops driving the linear motor 27 and the decompression means (not shown). Next, an operator or a transport means (not shown) places the primary processed product WK1 on the upper surface of the holding table 48 with the first adhesive sheet AS1 facing down, as shown by the solid line in FIG. After that, when the operator or the transport means (not shown) places the second ring frame RF2 on the upper surface of the holding table 48 so as to surround the primary processed product WK1, the second sticking means 40 drives the decompression means (not shown), and the second ring frame RF2 is driven. The ring frame RF2 and the primary processed product WK1 are sucked and held on the upper surface of the holding table 48.

Next, the reforming portion forming means 30 carries out a laser irradiation step of irradiating the wafer WF with the laser LB (see FIG. 3).
In the laser irradiation step, when the second sticking means 40 drives the linear motor 47 and moves the holding table 48 to the right, the reforming portion forming means 30 moves the laser irradiator in synchronization with the movement of the holding table 48. 32 and the linear motor 31 are driven to move the laser irradiator 32 in the front-rear direction. The modified portion forming means 30 is not particularly limited as long as it is a means for irradiating a laser LB capable of modifying a semiconductor wafer. As the reforming portion forming means 30, for example, an apparatus adopted in the stealth dicing method can be used.

Further, in the laser irradiation step, the laser LB is irradiated to the wafer WF while moving the laser irradiator 32 in the front-rear direction. In the present embodiment, the laser LB is irradiated from the second surface WF2 side of the wafer WF. The second surface WF2 is preferably polished so that the laser LB is easily incident on the inside of the wafer WF.
In the laser irradiator 32, the laser irradiation conditions are set so that a modified portion (referred to as a modified portion) can be formed inside the wafer WF. Examples of the laser irradiation conditions include, but are not limited to, laser output, laser frequency, pulse width, position of laser irradiation point, and laser wavelength.

FIG. 4 is a schematic vertical cross-sectional view of the wafer WF showing the divided surface DP inside the wafer WF.
FIG. 5 is a schematic vertical cross-sectional view of the wafer WF after forming a plurality of modified portion RPs along the divided surface DP inside the wafer WF.
FIG. 6 is a schematic cross-sectional view of the wafer WF after forming a plurality of modified portion RPs along the divided surface DP inside the wafer WF.
In addition, in FIG. 4, FIG. 5, and FIG. 6, the hatch is omitted from the viewpoint of the visibility of the figure.
In the laser irradiation step, the laser LB is irradiated to form a plurality of modified portion RPs along the divided surface DP inside the wafer WF. That is, the planar region inside the wafer in which the plurality of modified RPs are present corresponds to the divided surface DP. The dividing surface DP is a virtual surface on which the wafer WF is planned to be divided.
The wafer WF is divided in a later division step starting from the reforming portion RP.

When the wafer WF is made of a material having a crystal orientation, it is preferable that the split plane DP and the crystal orientation match. If the split plane DP and the crystal orientation match, the surface of the first thinned wafer WT1 and the surface of the second thinned wafer WT2 (the plane corresponding to the split plane DP) appearing due to the splitting of the wafer WF can be seen. Can be smoothed. The surface of the first thinning wafer WT1 that appears by division is WF3 with the first exposed surface (see FIG. 7C). The surface of the second thinned wafer WT2 that appears by division is designated as the second exposed surface WF4 (see FIG. 7C).

In the present specification, the modified portion is a portion that is weakened or softened by changing the properties and strength of the wafer. In the present specification, the modified portion includes a laser irradiation point irradiated with a laser inside the wafer, a peripheral portion formed around the laser irradiation point as a central portion, and a peripheral portion formed around the central portion. To say. The modification intensity inside the wafer is maximum at the laser irradiation point. The modification intensity of the peripheral portion decreases as the distance from the laser irradiation point increases.

Although the modified portion RP having a circular cross section is shown in FIGS. 5 and 6, the shape and size of the modified portion in the present specification are as shown in FIGS. 5 and 6. Not limited to.

It is also preferable that the modified portion RP is formed over the entire divided surface DP. The number of modified parts RP to be formed is not particularly limited. For example, the number of reformed portion RPs to be formed can be set so as to be easily divided into the first thinning wafer WT1 and the second thinning wafer WT2 according to the material of the wafer WF and the modification strength by the laser. .. Further, the number of modified parts RP to be formed can be set in consideration of the productivity of the semiconductor wafer.

In this embodiment, as shown in FIGS. 5 and 6, the plurality of modified parts RP overlap each other. In addition, in this specification, the fact that a plurality of modified parts overlap each other means that one modified part overlaps with at least one modified part among other modified parts. It does not mean that one reforming part overlaps with all other reforming parts. In the laser irradiation step, the laser irradiation conditions are set so that the plurality of reforming unit RPs overlap each other.

In the present embodiment, it is preferable to irradiate the laser LB along the dividing surface DP at intervals of 1 μm or more and 350 μm or less. That is, it is preferable to irradiate the laser LB so that the distance D between the points irradiated with the laser LB (laser irradiation points) is 1 μm or more and 350 μm or less. If the distance D between the laser irradiation points is 1 μm or more, the productivity is improved. When the distance between the laser irradiation points is 350 μm or less, it is possible to suppress the problem that cracks are likely to occur in the thickness direction of the wafer WF. The distance D between the laser irradiation points may be the same or different in all the reformed portion RPs as long as it is within the range of 1 μm or more and 350 μm or less.

The distance between the laser irradiation points can be adjusted to a predetermined distance by, for example, changing the moving speed of at least one of the holding table 48 and the laser irradiator 32.

When a plurality of modified portion RPs necessary for dividing the wafer WF in the plane direction are formed inside the wafer WF, the modified portion forming means 30 stops driving the laser irradiator 32. After stopping the driving of the laser irradiator 32, when the primary processed product WK1 reaches a predetermined position indicated by the alternate long and short dash line in FIG. 3, the second sticking means 40 stops driving the linear motor 47. Next, the second sticking means 40 drives the linear motor 47, moves the holding table 48 to the left, and performs the same operation as the first sticking means 20, as shown in the figure of reference numeral AA in FIG. Secondary processed product WK2 is formed (second pasting step). When the holding table 48 returns to the initial position, the second sticking means 40 stops driving the linear motor 47 and stops driving the decompression means (not shown).

Next, when the operator or the transporting means (not shown) places the secondary processed product WK2 on the holding surface 51A of the lower table 51 with the first adhesive sheet AS1 facing downward, as shown in FIG. 7A, the dividing means 50 drives a decompression means (not shown) to attract and hold the secondary processed product WK2 on the holding surface 51A. After that, the dividing means 50 drives the rotary motor 52 to rotate the upper table 53 in the counterclockwise rotation direction, and as shown in FIG. 7B, the upper table 53 is brought into contact with the secondary processed product WK2, and then illustrated. The secondary processed product WK2 is sucked and held by the holding surface 53A by driving the depressurizing means. Then, the dividing means 50 drives the rotation motor 52 to rotate the upper table 53 in the clockwise rotation direction, and as shown in FIG. 7C, the wafer is bounded by the dividing surface DP on which the plurality of reforming portion RPs are formed. By dividing the WF, the thinned first thinned wafer WT1 and the second thinned wafer WT2 are formed (division step). Next, when the operator or the conveying means (not shown) holds the first thinning wafer WT1 and the second thinning wafer WT2, the dividing means 50 stops driving the decompression means (not shown), and the first thinning wafer WT1. And the suction holding of the second thinning wafer WT2 is released. After that, when the conveying means (not shown) conveys the first thinning wafer WT1 and the second thinning wafer WT2 to the next step, each means drives each driving device and returns each member to the initial position. The same operation as above is repeated.

According to the present embodiment, a plurality of modified portion RPs are formed inside the wafer WF, and the wafer WF is divided with a division surface DP on which the plurality of modified portion RPs are formed as a boundary. Therefore, according to the present embodiment, it is possible to shorten the time for thinning, suppress cracking of the wafer WF, and improve the thickness accuracy as compared with the polishing method, without using pure water.
Further, according to the present embodiment, a plurality of modified portion RPs are formed so as to overlap each other. Therefore, more modified portions are present along the dividing surface, which makes it easier to divide the wafer WF.

[Second Embodiment]
The method for manufacturing a thin plate-shaped member according to the second embodiment is different from the first embodiment in the positional relationship between the modified portions when forming a plurality of modified portions. Since the second embodiment is the same as the first embodiment in other respects, the description thereof will be omitted or simplified.

The method for manufacturing the thinned plate-shaped member according to the second embodiment can also be carried out by using the thinned wafer manufacturing apparatus 10 for manufacturing the thinned wafer, which is an example of the thinned plate-shaped member.

The method for manufacturing the thin plate-shaped member according to the second embodiment is different from the laser irradiation step of the first embodiment in terms of the laser irradiation step. Specifically, the second embodiment is different from the first embodiment in that the modified portions RPs are separated from each other, and the modified portions overlap each other.

FIG. 8 is a schematic vertical cross-sectional view of the wafer WF after forming a plurality of modified portion RPs along the divided surface DP inside the wafer WF.
FIG. 9 is a schematic cross-sectional view of the wafer WF after forming a plurality of modified portion RPs along the divided surface DP inside the wafer WF.
Note that in FIGS. 8 and 9, the hatch is omitted from the viewpoint of visibility of the drawings.

In this embodiment, as shown in FIGS. 8 and 9, the plurality of modified parts RP are separated from each other. In the laser irradiation step, the laser irradiation conditions are set so that the plurality of reforming unit RPs do not overlap each other.

Although the modified portion RP having a circular cross section is shown in FIGS. 8 and 9, the shape and size of the modified portion in the present specification are as shown in FIGS. 8 and 9. Not limited to.

Also in this embodiment, it is preferable to irradiate the laser LB along the dividing surface DP at intervals of 1 μm or more and 350 μm or less. That is, it is preferable to irradiate the laser LB so that the distance D1 between the points irradiated with the laser LB (laser irradiation points) is 1 μm or more and 350 μm or less. If the distance D1 between the laser irradiation points is 1 μm or more, the productivity is improved. When the distance between the laser irradiation points is 350 μm or less, it is possible to suppress the problem that cracks are likely to occur in the thickness direction of the wafer WF. The distance D1 between the laser irradiation points may be the same or different in all the reforming unit RPs as long as it is within the range of 1 μm or more and 350 μm or less.

The distance between adjacent modified portions RP (distance between the end of one modified portion and the end of the other modified portion) is not particularly limited as long as the wafer WF can be divided in the plane direction.

The distance between the laser irradiation points can be adjusted to a predetermined distance by, for example, changing the moving speed of at least one of the holding table 48 and the laser irradiator 32.

According to the present embodiment, a plurality of modified portion RPs are formed inside the wafer WF, and the wafer WF is divided with a division surface DP on which the plurality of modified portion RPs are formed as a boundary. Therefore, according to the present embodiment, it is possible to shorten the time for thinning, suppress cracking of the wafer WF, and improve the thickness accuracy as compared with the polishing method, without using pure water.
Further, according to the present embodiment, a plurality of modified portion RPs are formed so as not to overlap each other. Therefore, the number of laser irradiation points can be reduced, and the productivity of the thin plate-shaped member is improved.

[Third Embodiment]
In the method for manufacturing a thin plate-shaped member according to the third embodiment, the distance between the laser irradiation points when forming a plurality of modified portions is different in the divided plane. The differences from the first embodiment and the second embodiment will be described below, and the same points as those of the first embodiment and the second embodiment will be omitted or simplified.

The method for manufacturing a thin plate-shaped member according to the present embodiment is characterized in that the laser irradiation step is performed under specific laser irradiation conditions as shown below.

That is, in the laser irradiation step of the manufacturing method according to the present embodiment, a plurality of modified portions are formed on the plate-shaped member while moving the position of the laser irradiation point, and the laser irradiation points on the outer peripheral side of the plate-shaped member are connected to each other. The distance between the laser irradiation points on the central side of the plate-shaped member is different from that of the laser irradiation points.

In the laser irradiation step of the manufacturing method according to the present embodiment, it is preferable to move at least one of the laser irradiator that irradiates the laser and the plate-shaped member. That is, in the laser irradiation step of the manufacturing method according to the present embodiment, the first aspect of moving the position of the laser irradiation point by moving the laser irradiator without moving the plate-shaped member, the laser irradiator is moved. One of the second aspect in which the position of the laser irradiation point is moved by moving the plate-shaped member and the third aspect in which the position of the laser irradiation point is moved by moving the plate-shaped member and the laser irradiator. Can be adopted. In a more detailed description of the present embodiment described later, a case where the first aspect of the present embodiment is adopted will be given as an example.

In the laser irradiation step of the manufacturing method according to the present embodiment, it is preferable to move the position of the laser irradiation point by rotating at least one of the laser irradiator and the plate-shaped member. The laser irradiation speed can be improved by rotating at least one of the laser irradiator and the plate-shaped member. By rotating at least one of the laser irradiator and the plate-shaped member, the number of accelerations and decelerations can be reduced as compared with the case where the laser is linearly irradiated. When irradiating a plurality of places linearly with a laser, when changing the irradiation position in the plane direction, the moving speed is once reduced to change the position, whereas the laser irradiator and the plate-shaped member When at least one of the above is rotated, the in-plane can be continuously irradiated at the same speed.
Here, in the laser irradiation step of the manufacturing method according to the present embodiment, at least one of the laser irradiator and the plate-shaped member may be combined with an operation of not only rotating but also translating.

Also in the method for manufacturing a thin plate-shaped member according to the present embodiment, the plate-shaped member is not particularly limited, but a semiconductor wafer is preferable.

The method for manufacturing the thinned plate-shaped member according to the present embodiment can also be carried out by using the thinned wafer manufacturing apparatus 10.
Further, the method for manufacturing the thinned plate-shaped member according to the present embodiment can also be carried out by using a thinned wafer manufacturing apparatus having the modified portion forming means 30A as shown in FIG.

10A, 10B, and 10C show a schematic view of the modified portion forming means 30A.
The reforming portion forming means 30A includes a driving portion 320, a shaft portion 321 and an arm portion 322, and a laser irradiator 323.

The drive unit 320 rotates the arm unit 322 supported via the shaft unit 321 with the shaft unit 321 as a rotation axis.

The laser irradiator 323 is attached to one end side of the arm portion 322 in the longitudinal direction, and the shaft portion 321 is attached to the other end side.
It is preferable that the laser irradiator 323 is movably attached along the longitudinal direction of the arm portion 322. For example, the laser irradiator 323 can also be moved by a drive device having a linear motor 31 and a slider 31A according to the first embodiment. Therefore, in the modified portion forming means 30A of the present embodiment, it is preferable that the arm portion 322 has the driving device.
The laser irradiator 323 is not particularly limited as long as it can irradiate a laser LB capable of modifying a semiconductor wafer as a plate-shaped member. The laser irradiator 323 may be the same as the laser irradiator 32 used in the above embodiment, for example.

Next, a method of manufacturing a thin plate-shaped member according to the present embodiment using a thinning wafer manufacturing apparatus having a modified portion forming means 30A will be described. Since the steps other than the laser irradiation step can be carried out in the same manner as the steps described in the first embodiment or the second embodiment, the description thereof will be omitted.

FIG. 10A shows a schematic view showing a step of irradiating the wafer outer peripheral portion WFe side of the wafer WF with the laser LB. Also in this embodiment, the laser LB is irradiated along the divided surface DP inside the wafer WF to form a plurality of modified portion RPs.
In the present embodiment, as shown in FIG. 10A, first, the laser LB is irradiated to the wafer outer peripheral portion WFe side of the divided surface DP to form the first laser irradiation point LP.
Next, the arm portion 322 is rotated by a predetermined angle to irradiate the laser LB to form a second laser irradiation point. In this way, the laser is irradiated while rotating the arm portion 322 at a predetermined angle, and a plurality of laser irradiation point LPs are formed at predetermined intervals along the rotation direction of the arm portion 322.

FIG. 10B shows a schematic view of a state in which the arm portion 322 is rotated 180 degrees, the laser LB is irradiated, and the laser irradiation point LP is formed.

Subsequently, the arm portion 322 is rotated by a predetermined angle to irradiate the laser LB, and the rotation and the laser irradiation are continued until the angle at which the arm portion 322 is rotated reaches 360 degrees. As a result, the laser irradiation points LP are arranged at predetermined intervals along the circumferential direction, and the modified portion is also formed along the circumferential direction. The distance between the laser irradiation point LPs aligned along the circumferential direction is preferably 1 μm or more and 350 μm or less.

After rotating the arm portion 322 by 360 degrees, the laser irradiator 323 is moved along the longitudinal direction of the arm portion 322 toward the shaft portion 321 side by a predetermined distance.

FIG. 10C shows a schematic view of a state in which the laser irradiator 323 is moved by a predetermined distance toward the shaft portion 321 side along the longitudinal direction of the arm portion 322.
After moving the laser irradiator 323 by a predetermined distance, laser irradiation is performed to form a laser irradiation point LP. After that, the arm portion 322 is continuously rotated by a predetermined angle to irradiate the laser, and the rotation and the laser irradiation are continued until the angle at which the arm portion 322 is rotated reaches 360 degrees. After rotating the arm portion 322 by 360 degrees, the laser irradiator 323 is moved along the longitudinal direction of the arm portion 322 toward the shaft portion 321 side by a predetermined distance.
By combining the rotation of the arm portion 322 and the slide movement of the laser irradiator 323 in this way, a plurality of laser irradiation point LPs are concentrically arranged along the circumferential direction of the wafer WF.

FIG. 11 is a schematic vertical cross-sectional view showing the positions and intervals between the laser irradiation point LPs in the laser irradiation step of the present embodiment, and the arrangement density of the laser irradiation point LPs on the divided surface DP.

As an example of the mode in which the distance between the laser irradiation point LPs on the outer peripheral portion WFe side of the wafer and the distance between the laser irradiation point LPs on the central portion WFc side are different in the manufacturing method according to the present embodiment, as shown in FIG. In addition, it is preferable that the distance between the laser irradiation point LPs on the outer peripheral portion WFe side of the wafer is smaller than the distance between the laser irradiation points LPs on the central portion WFc side. As another example of the embodiment, the distance between the laser irradiation point LPs on the outer peripheral portion WFe side of the wafer may be larger than the distance between the laser irradiation points LPs on the central portion WFc side.

That is, in the manufacturing method according to the present embodiment, the distance between the laser irradiation point LPs to be irradiated along the division surface DP of the wafer WF is not made uniform in the division surface DP, but is a region where the distance is reduced. , Provide an area to increase the interval.

By making the distance between the laser irradiation point LPs different in the divided surface DP in this way, the number of laser irradiation point LPs can be reduced as compared with the case where the laser irradiation is uniformly performed in the divided surface DP, and the manufacturing efficiency can be reduced. Is improved.

Further, since it is sufficient that a plurality of modified portions are formed so that the wafer WF can be divided along the dividing surface DP, a region for narrowing the distance between the laser irradiation point LPs and a region for widening the distance between the laser irradiation points LP are provided. In addition, it is possible to achieve both the resolvability of the wafer WF and the manufacturing efficiency. As for the distance between the laser irradiation point LPs, it is preferable that the region where the distance between the laser irradiation point LPs is narrowed and the region where the distance between the laser irradiation points LPs are widened satisfy the range of 1 μm or more and 350 μm or less. For example, in a region where the distance between the laser irradiation point LPs is narrowed, the laser irradiation is performed so that the distance between the laser irradiation point LPs is within the range of 1 μm or more and less than 100 μm, and the distance between the laser irradiation point LPs is widened. In the region, it is preferable to irradiate the laser so as to be within the range of 100 μm or more and 350 μm or less.

Further, in the manufacturing method according to the present embodiment, it is preferable that the distance between the laser irradiation point LPs increases from the wafer outer peripheral portion WFe side toward the central portion WFc side. In this case, the distance between the laser irradiation points LP is not limited to the mode in which the distance between the laser irradiation points LPs continuously decreases from the wafer outer peripheral portion WFe side toward the central portion WFc side.
When the distance between the laser irradiation points LP increases from the wafer outer peripheral portion WFe side toward the central portion WFc side, the laser is irradiated at a certain interval in the wafer outer peripheral portion WFe side region, and the region is concerned. In the region on the WFc side of the central portion, the mode of irradiating the laser at a constant interval larger than the interval is also included. For example, as shown in FIG. 11, in the wafer WF, the first region AR1 on the outer peripheral portion WFe side of the wafer, the second region AR2 on the central portion WFc side, and the second region between the first region AR1 and the second region AR2. The three regions AR3 are set, the first region AR1 is irradiated with lasers at a plurality of locations at the first interval LD1, and the third region AR3 is irradiated with lasers at a plurality of locations at the third interval LD3. The second region AR2 is irradiated with the laser at a plurality of locations at the second interval LD2, the first interval LD1 is smaller than the third interval LD3, and the third interval LD3 is the third. The interval of 2 is preferably smaller than LD2. In addition, although the embodiment in which three regions are set has been described here as an example, two regions may be set or four or more regions may be set.

According to the present embodiment, a plurality of modified portion RPs are formed inside the wafer WF, and the wafer WF is divided with a division surface DP on which the plurality of modified portion RPs are formed as a boundary. Therefore, without using pure water, the time for thinning can be shortened as compared with the polishing method, cracking of the wafer WF can be suppressed, and the thickness accuracy can be improved.
Further, according to the present embodiment, the modified portion RP can be formed and the wafer WF can be divided without forming the laser irradiation point LPs in the dividing surface DP at uniform intervals. Therefore, the wafer WF can be divided. Productivity can be further improved while maintaining the partitionability of the.

[Fourth Embodiment]
In the method for manufacturing a thin plate-shaped member according to the fourth embodiment, the modified portion forming means used when forming a plurality of modified portions is the modified portion forming means 30A described in the third embodiment. different. The differences from the first, second, and third embodiments will be described below, and the same points as those of the first, second, and third embodiments will be omitted or simplified.

12A, 12B, and 12C show schematic views of the modified portion forming means 30B used in the present embodiment.
The method for manufacturing the thinned plate-shaped member according to the present embodiment can also be carried out by using a thinned wafer manufacturing apparatus having the reforming portion forming means 30B as shown in FIGS. 12A, 12B, and 12C. ..
The reforming portion forming means 30B includes a driving portion 320, a shaft portion 321 and an arm portion 322B, a first laser irradiator 323A, and a second laser irradiator 323B.

The drive unit 320 rotates the arm unit 322B supported via the shaft unit 321 with the shaft unit 321 as a rotation shaft.

The arm portion 322B has a shape longer than that of the arm portion 322 of the third embodiment.
The first laser irradiator 323A is attached to one end side of the arm portion 322B in the longitudinal direction, the second laser irradiator 323B is attached to the other end side, and the one end side and the other end portion of the arm portion 322B in the longitudinal direction. The shaft portion 321 is attached to the central portion between the side and the side.

It is preferable that the first laser irradiator 323A and the second laser irradiator 323B are movably attached along the longitudinal direction of the arm portion 322B. For example, the first laser irradiator 323A and the second laser irradiator 323B can also be moved by the drive device having the linear motor 31 and the slider 31A in the first embodiment. Therefore, in the modified portion forming means 30B of the present embodiment, it is preferable that the arm portion 322B has the driving device. Further, it is preferable that the first laser irradiator 323A is attached to the arm portion 322B so as to be movable from one end side of the arm portion 322B to the other end side beyond the central portion of the arm portion 322B. Further, it is preferable that the second laser irradiator 323B is also attached to the arm portion 322B so as to be movable from the other end side of the arm portion 322B to the one end portion side beyond the central portion of the arm portion 322B.

The first laser irradiator 323A and the second laser irradiator 323B are not particularly limited as long as they can irradiate the laser LB capable of modifying the semiconductor wafer as a plate-shaped member. The laser irradiator 323 may be the same as the laser irradiator 32 used in the above embodiment, for example.

Next, a method of manufacturing a thin plate-shaped member according to the present embodiment using a thinning wafer manufacturing apparatus having the modified portion forming means 30B will be described. Since the steps other than the laser irradiation step can be carried out in the same manner as the steps described in the first embodiment or the second embodiment, the description thereof will be omitted.

FIG. 12A shows a schematic view showing a step of irradiating the wafer outer peripheral portion WFe side of the wafer WF with the laser LB. Also in this embodiment, the laser LB is irradiated along the divided surface DP inside the wafer WF to form a plurality of modified portion RPs.
In the present embodiment, as shown in FIG. 12A, the laser LB is irradiated to the wafer outer peripheral portion WFe side of the dividing surface DP. Since the modified portion forming means 30B has two laser irradiators, it is possible to form the laser irradiation point LP at two locations at the same time to form the modified portion.
Next, the arm portion 322B is rotated by a predetermined angle to irradiate the laser LB to form the next laser irradiation point LP. In this way, the laser LB is irradiated while rotating the arm portion 322B at a predetermined angle, and a plurality of laser irradiation point LPs are formed at predetermined intervals along the rotation direction of the arm portion 322B.
Rotation and laser irradiation are continued until the angle at which the arm portion 322B is rotated reaches 180 degrees. As a result, the laser irradiation points LP are arranged at predetermined intervals along the circumferential direction, and the modified portion is also formed along the circumferential direction. The distance between the modified portions formed along the circumferential direction is preferably 1 μm or more and 350 μm or less.

FIG. 12B shows a schematic view of a state in which the first laser irradiator 323A and the second laser irradiator 323B are moved by a predetermined distance toward the shaft portion 321 side along the longitudinal direction of the arm portion 322B.
Specifically, after irradiating the arm portion 322B with a laser while rotating it 180 degrees to form a modified portion, the first laser irradiator 323A and the second laser irradiator 323B are placed along the longitudinal direction of the arm portion 322B. , Move a predetermined distance toward the center of the arm portion 322B.
After moving the first laser irradiator 323A and the second laser irradiator 323B, laser irradiation is performed to form a laser irradiation point LP to form a modified portion. After that, the arm portion 322B is continuously rotated by a predetermined angle to irradiate the laser LB, and the rotation and the laser irradiation are continued until the rotated angle of the arm portion 322B becomes 180 degrees. After rotating the arm portion 322B by 180 degrees, the first laser irradiator 323A and the second laser irradiator 323B are moved by a predetermined distance along the longitudinal direction of the arm portion 322B toward the center of the arm portion 322B. Let me.

In FIG. 12C, the rotation of the arm portion 322B and the slide movement of the first laser irradiator 323A and the second laser irradiator 323B are repeatedly performed, and the first laser irradiator 323A and the first laser irradiator 323A and the first laser irradiator 323A and the second laser irradiator 323A to the center WFc side of the wafer WF are repeatedly performed. 2 A schematic diagram of a state in which the laser irradiator 323B is moved is shown.
In this way, by combining the rotation of the arm portion 322B and the slide movement of the first laser irradiator 323A and the second laser irradiator 323B, a plurality of laser irradiation point LPs are concentrically formed along the circumferential direction of the wafer WF. It will be in an arranged state. Further, even with the manufacturing method of the present embodiment, in the cross-sectional view of the wafer WF, as shown in FIG. 12C, the central portion of the wafer WF is more than the distance between the laser irradiation points LP in the region on the wafer outer peripheral portion WFe side of the wafer WF. The distance between the laser irradiation point LPs on the WFc side is large.

By using the thinning wafer manufacturing apparatus having the modified portion forming means 30B according to the present embodiment, the laser irradiation points LP are arranged as shown in FIG. 11 described in the third embodiment to form the modified portion. can do.

According to the present embodiment, a plurality of modified portion RPs are formed inside the wafer WF, and the wafer WF is divided with a division surface DP on which the plurality of modified portion RPs are formed as a boundary. Therefore, without using pure water, the time for thinning can be shortened as compared with the polishing method, cracking of the wafer WF can be suppressed, and the thickness accuracy can be improved.
Further, according to the present embodiment, the modified portion RP can be formed and the wafer WF can be divided without forming the laser irradiation point LPs in the dividing surface DP at uniform intervals. Therefore, the wafer WF can be divided. Productivity can be further improved while maintaining the partitionability of the.
Further, according to the present embodiment, since the laser irradiation is performed by using two laser irradiators, the productivity can be improved as compared with the third embodiment.

[Fifth Embodiment]
In the method for manufacturing a thin plate-shaped member according to the fifth embodiment, the modified portion forming means used when forming a plurality of modified portions is the modified portion described in the third embodiment and the fourth embodiment. It is different from the forming means. The differences from the first, second, third, and fourth embodiments will be described below, and the same points as those of the first, second, third, and fourth embodiments will be omitted or simplified. ..

13A, 13B, and 13C show schematic views of the modified portion forming means 30C used in the present embodiment.
The method for manufacturing the thinned plate-shaped member according to the present embodiment can also be carried out by using a thinned wafer manufacturing apparatus having the modified portion forming means 30C as shown in FIGS. 13A, 13B, and 13C. ..
The reforming portion forming means 30C includes a driving portion 320, a shaft portion 321 and an arm portion 322C, a first plurality of laser irradiators 324, and a second plurality of laser irradiators 326.

The drive unit 320 rotates the arm unit 322C supported via the shaft unit 321 with the shaft unit 321 as a rotation shaft.

The arm portion 322C has a shape longer than that of the arm portion 322 of the third embodiment.
The first plurality of laser irradiators 324 are attached to one end side of the arm portion 322C in the longitudinal direction, the second plurality of laser irradiators 326 are attached to the other end side, and the one end portion side of the arm portion 322C in the longitudinal direction. The shaft portion 321 is attached to the central portion between the portion and the other end portion side.

It is preferable that the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 are movably attached along the longitudinal direction of the arm portion 322C. For example, the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 can also be moved by the drive device having the linear motor 31 and the slider 31A in the first embodiment. Therefore, in the modified portion forming means 30C of the present embodiment, it is preferable that the arm portion 322C has the driving device. Further, it is preferable that the first plurality of laser irradiators 324 are attached to the arm portion 322C so as to be movable from one end side of the arm portion 322C to the other end side beyond the central portion of the arm portion 322C. .. Further, it is preferable that the second plurality of laser irradiators 326 are also attached to the arm portion 322C so as to be movable from the other end side of the arm portion 322C to the one end portion side beyond the central portion of the arm portion 322C. ..

The first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 are not particularly limited as long as they can irradiate a plurality of laser LBs capable of modifying a semiconductor wafer as a plate-shaped member. For example, the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 may each have a plurality of laser light sources. Although FIGS. 13A, 13B, and 13C show modes in which the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 each irradiate the laser LB from three locations. , The present invention is not limited to such aspects. For example, the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 may be in a mode in which two locations can be irradiated at the same time, or a mode in which four or more locations can be simultaneously irradiated. .. Further, the number of lasers that can be simultaneously irradiated from the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 may be the same as or different from each other.

Further, it is preferable that the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 each have a mechanism for widening or narrowing the distance between the plurality of lasers to be irradiated.

Next, a method of manufacturing a thin plate-shaped member according to the present embodiment using a thinning wafer manufacturing apparatus having the modified portion forming means 30C will be described. Since the steps other than the laser irradiation step can be carried out in the same manner as the steps described in the first embodiment or the second embodiment, the description thereof will be omitted.

FIG. 13A shows a schematic view showing a step of irradiating the wafer outer peripheral portion WFe side of the wafer WF with the laser LB. Also in this embodiment, the laser LB is irradiated along the divided surface DP inside the wafer WF to form a plurality of modified portion RPs.
In the present embodiment, as shown in FIG. 13A, the laser LB is irradiated to the wafer outer peripheral portion WFe side of the dividing surface DP. The reforming portion forming means 30C has two laser irradiators, and since the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 simultaneously irradiate a plurality of laser LBs, a plurality of laser LBs are simultaneously irradiated to a plurality of locations. A laser irradiation point LP can be formed to form a modified portion.
Spacing between laser irradiation point LPs formed by simultaneously irradiating laser LB from the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 (laser irradiation point LPs arranged in the radial direction of the wafer WF). The interval) is preferably 1 μm or more and 350 μm or less independently of each other.
In the example of the present embodiment shown in FIG. 13A, the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 each simultaneously irradiate three laser LBs, so that the divided surface of the wafer WF is divided. Six laser irradiation point LPs can be formed simultaneously with respect to the DP, and six modified portions can be formed at the same time.

Next, the arm portion 322C is rotated by a predetermined angle to irradiate the laser LB to form the next laser irradiation point. In this way, the laser LB is irradiated while rotating the arm portion 322C at a predetermined angle, and a plurality of laser irradiation point LPs are formed at predetermined intervals along the rotation direction of the arm portion 322C.
The rotation and laser irradiation are continued until the angle at which the arm portion 322C is rotated reaches 180 degrees. As a result, the laser irradiation points LP are arranged at predetermined intervals along the circumferential direction, and the modified portion is also formed along the circumferential direction. The distance between the laser irradiation point LPs formed along the circumferential direction is preferably 1 μm or more and 350 μm or less.

FIG. 13B shows a schematic view of a state in which the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 are moved by a predetermined distance toward the shaft portion 321 side along the longitudinal direction of the arm portion 322C. Has been done.
Specifically, after the modified portion is formed by irradiating the arm portion 322C with a laser while rotating it 180 degrees, the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 are subjected to the longitudinal length of the arm portion 322C. A predetermined distance is moved toward the center of the arm portion 322C along the direction. Further, in the present embodiment, when moving along the arm portion 322C, the distance between the plurality of lasers irradiated from the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 is also increased. As a result, the distance between the laser irradiation point LPs can be increased, and the distance between the modified portions can also be increased.
The first multiple laser irradiator 324 and the second multiple laser irradiator 326 are moved along the arm portion 322C, the distance between the lasers to be irradiated is further widened, and then the laser is irradiated to form the laser irradiation point LP. And form a modified part. After that, the arm portion 322C is continuously rotated by a predetermined angle to irradiate the laser LB, and the rotation and the laser irradiation are continued until the angle at which the arm portion 322C is rotated reaches 180 degrees. After rotating the arm portion 322C by 180 degrees, the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 are further directed toward the center of the arm portion 322C along the longitudinal direction of the arm portion 322C. , Move a predetermined distance.

FIG. 13C shows a schematic view of a state in which the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 have moved to the central WFc side of the wafer WF.
Specifically, in FIG. 13C, the position of the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326 shown in FIG. 13B is further slid toward the center of the arm portion 322C, and the first A schematic view of a state in which the distance between the plurality of lasers irradiated from the plurality of laser irradiators 324 and the second plurality of laser irradiators 326 is further widened is shown.
By setting the modified portion forming means 30C to the state shown in FIG. 13C, the laser irradiation can be performed by widening the distance between the laser irradiation points LP in the region inside the region of the laser-irradiated wafer WF shown in FIG. 13B. This makes it possible, and the distance between the formed modified portions can be further increased.
In this way, the rotation of the arm portion 322C, the slide movement of the first plurality of laser irradiators 324 and the second plurality of laser irradiators 326, and the first plurality of laser irradiators 324 and the second multiple laser irradiators 326 By combining the expansion of the distance between the plurality of lasers irradiated from the laser, a plurality of laser irradiation point LPs are arranged concentrically along the circumferential direction of the wafer WF.
Further, even with the manufacturing method of the present embodiment, in the cross-sectional view of the wafer WF, as in FIG. 12C, the central portion of the wafer WF is more than the distance between the laser irradiation points LP in the region on the wafer outer peripheral portion WFe side of the wafer WF. The distance between the laser irradiation point LPs on the WFc side is large.

According to the present embodiment, a plurality of modified portion RPs are formed inside the wafer WF, and the wafer WF is divided with a division surface DP on which the plurality of modified portion RPs are formed as a boundary. Therefore, without using pure water, the time for thinning can be shortened as compared with the polishing method, cracking of the wafer WF can be suppressed, and the thickness accuracy can be improved.
Further, according to the present embodiment, the modified portion RP can be formed and the wafer WF can be divided without forming the laser irradiation point LPs in the dividing surface DP at uniform intervals. Therefore, the wafer WF can be divided. Productivity can be further improved while maintaining the partitionability of the.
Further, according to the present embodiment, the laser irradiation is performed by using two laser irradiators capable of irradiating the laser at a plurality of places at the same time, so that the productivity can be improved as compared with the fourth embodiment.

[Modification of Embodiment]
As described above, the best configuration, method, etc. for carrying out the present invention are disclosed in the above description, but the present invention is not limited thereto. That is, the present invention is mainly illustrated and described with respect to a particular embodiment, but without departing from the technical idea of the present invention and the scope of the object, the shape with respect to the above-described embodiment. , Materials, quantities, and other detailed configurations can be modified by those skilled in the art. Further, the description limiting the shape, material, etc. disclosed above is exemplarily described for facilitating the understanding of the present invention, and does not limit the present invention. Therefore, those shapes, materials, etc. The description by the name of the member excluding some or all of the restrictions such as the above is included in the present invention.

The shape and size of the modified portion in the present specification are not limited to the shapes shown in FIGS. 5, 6, 8 and 9. Examples of the shape of the modified portion include a spherical shape, an elliptical spherical shape, a columnar shape, a prismatic shape, a conical shape, and a pyramidal shape. The size of the modified portion is not particularly limited as long as the plate-shaped member can be divided into a plurality of thinned plate-shaped members. The modified portion is preferably sized in consideration of the thickness of the plate-shaped member before division. This is because if the modified portion is too large in the thickness direction of the plate-shaped member, cracks may occur in the thickness direction. Therefore, the modified portion may be formed so that it can be divided in the plane direction along the dividing surface.

In the above-described embodiment, the embodiment in which the plate-shaped member is divided into two thinned plate-shaped members has been described as an example, but in another embodiment, the plate-shaped member is divided into three or more thinned plate-shaped members. A mode to do is mentioned. For example, in the case of dividing into three thinned plate-shaped members, when setting the dividing surface inside the plate-shaped member, two dividing surfaces (first dividing surface and second dividing surface) are set, and the first A plurality of modified portion RPs may be formed along the one partition plane, and a plurality of modified portion RPs may be formed along the second divided surface. Further, as another embodiment, there is also an embodiment in which a laser irradiation step and a division step are performed using a thin plate-shaped member to form a further thin plate-shaped member.

Further, for example, in the first sticking means 20 and the second sticking means 40, a closed loop-shaped notch is formed in the strip-shaped adhesive sheet base material, so that the inside thereof is the first adhesive sheet AS1 and the second adhesive. The sheet AS2 may be used, and a plurality of first adhesive sheets AS1 and second adhesive sheet AS2 may be fed out with the original fabric temporarily attached to the first release sheet RL1 and the second release sheet at predetermined intervals.
In the first sticking means 20 and the second sticking means 40, when the original fabric in which the strip-shaped adhesive sheet base material is temporarily attached to the first peeling sheet RL1 and the second peeling sheet RL2 is adopted, the cutting blade and the laser A closed loop-shaped notch is formed in the adhesive sheet base material by a cutting means such as a cutter, a hot cutter, an air cutter, and a compressed water cutter, and the first adhesive sheet AS1 and the second adhesive sheet AS2 are formed inside the notch. May be formed.
In the first sticking means 20 and the second sticking means 40, after sticking the strip-shaped adhesive sheet base material to the first ring frame RF1 and the second ring frame RF2, respectively, the adhesive sheet is used by the cutting means as described above. A closed loop-shaped notch may be formed in the base material, and a first adhesive sheet AS1 and a second adhesive sheet AS2 may be formed inside the notch.
The peeling member constituting the first sticking means 20 and the second sticking means 40 may be a roller or a linear member.
As the pressing means constituting the first sticking means 20 and the second sticking means 40, a pressing member such as a blade material, rubber, resin, sponge, or air blowing can be adopted.
The holding table 28 and the holding table 48 are chuck means such as a mechanical chuck and a chuck cylinder, a Coulomb force, an adhesive, an adhesive, a magnetic force, Bernoulli adsorption, a drive device, etc., and are a wafer WF, a first ring frame RF1, and a second. The ring frame RF2, the primary processed product WK1, and the like may be supported.
The thinning wafer manufacturing apparatus 10 does not have to include the second sticking means 40. In this case, the dividing means 50 may directly hold the second surface WF2 of the wafer WF on the holding surface 53A.

The laser irradiation step may be performed by irradiating the wafer WF before being divided with the laser LB. For example, the laser LB may be irradiated to the wafer WF before the first adhesive sheet AS1 is attached.

The direction in which the laser LB is irradiated to the wafer WF is not limited to the direction in which the laser LB is irradiated from the second surface WF2 side of the wafer WF as in the above embodiment. For example, the laser LB may be irradiated from the first surface WF1 side of the wafer WF. Further, for example, the laser LB may be irradiated from both the first surface WF1 side and the second surface WF2 side of the wafer WF. Further, when the laser LB is irradiated from both the first surface WF1 side and the second surface WF2 side of the wafer WF, the laser LB may be simultaneously irradiated from the first surface WF1 side and the second surface WF2 side. The laser LB may be irradiated from the side surface side of the wafer WF. When irradiating the laser LB from the side surface side of the wafer WF, the laser irradiation conditions may be set so that the modified portion RP is formed along the divided surface DP.

The modified portion forming means 30 may irradiate the wafer WF to which the first adhesive sheet AS1 is attached with the laser LB from the side of the first adhesive sheet AS1, or the wafer WF to which the second adhesive sheet AS2 is attached. The laser LB may be irradiated from the first adhesive sheet AS1 side or the second adhesive sheet side, the laser LB may be irradiated from the outer peripheral surface side of the wafer WF, or the laser may be irradiated from the side surface side of the wafer WF. The laser LB may be irradiated from two or all of the first adhesive sheet AS1 side, the second adhesive sheet AS2 side, the outer peripheral surface side, and the side surface side.
The reforming portion forming means 30 may irradiate the wafer WF held by adsorption on the holding table 28, the holding table 48, the lower table 51 or the upper table 53 with the laser LB.
The reforming portion forming means 30 may employ a laser irradiator capable of irradiating a laser having a linear focus (linear laser) or a laser having a planar focus (plane laser), or a plurality of laser irradiations. A device may or may not be adopted.
The modified portion forming means 30 can arbitrarily determine the position of the focal point, and the thickness ratio of the first thinning wafer WT1 and the second thinning wafer WT2 to be formed may be 50:50. It may be 1 to 99 or 1000 to 1, and the position (depth from the surface of the wafer WF) of the modified portion RP formed by laser irradiation can be determined according to the desired thickness of the thinned wafer. it can.

The modified portion forming means of the first, second, third, and fourth embodiments is an embodiment in which a plurality of laser irradiators capable of simultaneously irradiating a plurality of lasers as described in the fifth embodiment are mounted. You may.

In the first, second, third, fourth, and fifth embodiments, it is also preferable that the holding table 48 for holding the wafer WF is provided with a rotation mechanism capable of rotating the wafer WF. When the holding table 48 rotates the wafer WF, for example, the laser irradiation is performed without rotating the arm portion that supports the laser irradiator by the reforming portion forming means as in the third, fourth, and fifth embodiments. The point LP can be formed along the circumferential direction of the wafer WF.
Therefore, as one aspect of the thinning wafer manufacturing apparatus, the holding table 48 for holding the wafer WF is provided with a rotation mechanism capable of rotating the wafer WF, and the arm portion supporting the laser irradiator is provided with the rotation mechanism. It may not be in the form. In this embodiment, the laser LB may be irradiated by the laser irradiator while rotating the wafer WF on the holding table 48 provided with the rotation mechanism.
Further, as one aspect of the thinning wafer manufacturing apparatus, the holding table 48 for holding the wafer WF is provided with a rotation mechanism capable of rotating the wafer WF, and the arm portion supporting the laser irradiator is rotated. The mode may be provided with the rotation mechanism of the above. In this embodiment, at least one of the rotation mechanisms may be driven to irradiate the laser LB while changing the relative positions of the laser irradiator and the wafer WF.

In the third, fourth, and fifth embodiments, the mode in which the laser irradiation point LP is formed concentrically has been described as an example, but the present invention is not limited to such a mode. For example, there is also an embodiment in which the laser irradiation point LP is formed so that the laser irradiation point LP is spirally aligned from the central portion WFc of the wafer WF toward the outer peripheral portion WFe side of the wafer.

In the third, fourth, and fifth embodiments, the mode in which the distance between the laser irradiation points LP differs between the outer peripheral side of the plate-shaped member and the central portion side of the plate-shaped member has been described as an example. , The present invention is not limited to such aspects. For example, in the laser irradiation step, while moving the position of the laser irradiation point from the outer peripheral side of the plate-shaped member to the central portion side of the plate-shaped member, a plurality of modified portions are placed on the plate-shaped member at regular intervals. The mode of forming is also mentioned. In the case of this embodiment, for example, the same can be performed as in the third, fourth, or fifth embodiment except that the distance between the laser irradiation point LPs is a constant distance. For example, the steps shown in FIGS. 12A and 12B can be carried out in the same manner as in the fourth embodiment, and thereafter, as shown in FIG. 14, the laser irradiation can be carried out by irradiating the laser with a constant distance between the laser irradiation point LPs. ..

When the laser irradiator is rotated to irradiate the laser, the thinning plate-shaped member manufacturing apparatus includes a reformed portion forming means for forming a plurality of modified portions inside the plate-shaped member and a plate-shaped member after modification. The modified portion forming means includes at least a first thinned plate-shaped member and a dividing means for forming the second thinned plate-shaped member, and the modified portion forming means includes an arm portion, a laser irradiator that irradiates a laser, and the arm. It is preferable that the laser irradiator has a drive unit that rotatably supports the unit, and the laser irradiator is slidably supported by the arm unit.
It is preferable that the apparatus for manufacturing the thin plate-shaped member further includes the first sticking means 20 and the second sticking means 40 described in the above-described embodiment and the like.
In the apparatus for manufacturing the thin plate-shaped member, it is preferable that the reforming portion forming means has a plurality of laser irradiators. When a plurality of laser irradiators are provided, it is preferable that the irradiation interval between the plurality of lasers can be increased or decreased.
In the apparatus for manufacturing the thin plate-shaped member, it is preferable that the laser irradiator can irradiate a plurality of lasers at the same time.
In this thinned plate-shaped member manufacturing apparatus, it is preferable to further have a holding means for rotatably supporting the plate-shaped member.

The dividing means 50 is a chuck means such as a mechanical chuck or a chuck cylinder, a Coulomb force, an adhesive, an adhesive, a magnetic force, Bernoulli adsorption, a drive device, or the like, and is used as a secondary processed product WK2 on the AS1 side and the second adhesive. It may be configured to hold at least one side of the sheet AS2 side.
When dividing the wafer WF, the dividing means 50 may move the lower table 51 and the upper table 53 relative to each other in the vertical direction to separate the wafer WF in the thickness direction of the wafer WF, or may use the lower table 51 or the like. The lower table 51 and the upper table 53 may be moved linearly and relative to each other in the plane direction parallel to the support surface of the upper table 53, or may be relatively rotated in the circumferential direction in the plane parallel to the support surface. At least one may be moved or rotated.

The wafer WF may have a circuit. The circuit is preferably formed on at least one of the first surface WF1 and the second surface WF2 of the wafer WF. The surface on which the circuit is formed corresponds to the circuit surface. The circuit surface may be the first surface WF1 or the second surface WF2. Both the first surface WF1 and the second surface WF2 may be circuit surfaces. When the wafer WF has a circuit, it is preferable that a protective sheet is attached to the circuit surface on which the circuit is formed. The circuit can be protected by laminating the protective sheet on the circuit surface. The protective sheet is not particularly limited as long as it is made of a material that can protect the circuit. For example, when the wafer WF has a circuit on the first surface WF1, the circuit can be protected because the first adhesive sheet AS1 in the embodiment is laminated on the first surface WF1.

The method for manufacturing the thinned wafer may further include a circuit forming step of forming a circuit on at least one surface of the first thinned wafer WT1 and the second thinned wafer WT2. In this way, when the circuit is formed in the step after the dividing step, the exposed surface (the surface corresponding to the divided surface DP) that appears after being divided into the first thinning wafer WT1 and the second thinning wafer WT2. A circuit may be formed on the 1 exposed surface WF3 and the 2nd exposed surface WF4). When the circuit is formed in a step after the dividing step, the exposed surface (the surface corresponding to the divided surface DP. The first exposure) that appears after being divided into the first thinning wafer WT1 and the second thinning wafer WT2. A circuit may be formed on a surface opposite to the surface WF3 and the second exposed surface WF4).

The method for producing a thin wafer may further include a polishing step of polishing at least one of the first exposed surface WF3 and the second exposed surface WF4. The method of polishing the first exposed surface WF3 and the second exposed surface WF4 is not particularly limited. In this polishing step, the wafer WF is not polished to the thickness of the first thinning wafer WT1 or the second thinning wafer WT2 having a desired thickness, but the exposed surface after division is made smoother. The time required to carry out this polishing step is significantly shorter than the time required to reduce the thickness of the wafer WF. Therefore, even if the thinning wafer manufacturing method includes a polishing step, the manufacturing efficiency is still higher than the method of thinning the wafer WF only by polishing.
Further, after the polishing step, a circuit forming step of forming a circuit on at least one of the polished first exposed surface WF3 and the second exposed surface WF4 may be performed.

Further, in the method for producing a thin wafer, it is preferable that the wafer WF is adsorbed and held on at least one surface side of the first surface WF1 and the second surface WF2. When the wafer WF is adsorbed and held, it is more preferable that a protective sheet is laminated on the surface of the wafer WF to be adsorbed and held, and the wafer WF is adsorbed and held via the protective sheet. It is preferable that the wafer WF is adsorbed and held in at least one of the laser irradiation step and the dividing step. The wafer WF is preferably suction-held by a suction table. Examples of the adsorption table include a porous table and the like.

The secondary processed product WK2 does not have to include any one of the first ring frame RF1, the second ring frame RF2, and the second adhesive sheet AS2.
The first frame member and the second frame member may have other shapes such as a circular shape, an elliptical shape, a polygonal shape having a triangle or more, and a non-annular shape.

The thinned wafer manufacturing apparatus 10 includes an articulated robot, a belt conveyor, and the like, which are drive devices for transporting the wafer WF, the first ring frame RF1, the second ring frame RF2, the primary processed product WK1, and the secondary processed product WK2. A transport means may be provided, or a stock means capable of accommodating a plurality of the first ring frame RF1 and the second ring frame RF2 is provided, and the transport means from the stock means to the first ring frame RF1 and the second ring frame RF2. May be transported onto the holding table 28 and the holding table 48, respectively.

The manufacturing apparatus for the thinned plate-shaped member is not limited to the thinning wafer manufacturing apparatus 10.
For example, the thinned plate-shaped member can be manufactured by using the thinned wafer manufacturing apparatus 100 shown in FIGS. 15A, 15B, 15C, 16A, and 16B.
In FIGS. 15A, 15B, 15C, 16A, and 16B, in the thinning wafer manufacturing apparatus 100 as a thinning plate-like member, the first adhesive surface AT11 of the first double-sided adhesive sheet AT1 is provided on the support surface 111. The first hard support 110 to be attached and the entire first surface WF1 are parallel to the first surface WF1 inside the wafer WF as a plate-like member attached to the second adhesive surface AT12 of the first double-sided adhesive sheet AT1. A lower table on the opposite side of the wafer WF with a modified portion forming means 120 for forming a plurality of modified portions along a split surface, a lower table 130 as a first holding means, and a first hard support 110. The first fixing means 140 for detachably fixing the lower table 130 and the first rigid support 110 so that the 130 is located, and the first adhesive surface AT21 of the second double-sided adhesive sheet AT2 are attached to the support surface 151. A second hard support 150, an upper table 160 as a second holding means for holding the wafer WF from the second surface WF2 side, and an upper table 160 on the opposite side of the wafer WF with the second hard support 150 interposed therebetween. The second thinning means 170 for detachably fixing the upper table 160 and the second hard support 150 so as to be located, and the first thinning of the wafer WF having the first surface WF1 with the divided surface as a boundary. The lower table 130 and the upper table 160 are relative to each other so as to be divided into a first thinning wafer WT1 as a plate-shaped member and a second thinning wafer WT2 as a second thinning plate-shaped member having a second surface WF2. It is provided with a relative moving means 180 for moving.
The divided surface and the modified portion are the same as those described in the above embodiment.

The first hard support 110 and the second hard support 150 are preferably plate-shaped. The materials and shapes of the first hard support 110 and the second hard support 150 may be appropriately determined in consideration of mechanical strength. Examples of the materials of the first hard support 110 and the second hard support 150 include metal materials, non-metal inorganic materials, resin materials, composite materials, and the like independently of each other. Examples of the metal material include SUS and the like. Examples of the non-metallic inorganic material include glass and silicon wafers. Examples of the resin material include polyimide and polyamide-imide. Examples of the composite material include glass epoxy resin and the like. The material of the first hard support 110 and the second hard support 150 is preferably any material selected from the group consisting of SUS, glass, and a silicon wafer.

The thicknesses of the first hard support 110 and the second hard support 150 may be appropriately determined in consideration of mechanical strength, handleability, etc., and are, for example, 100 μm or more and 50 mm or less independently of each other.
As will be described later, the first rigid support 110 may be bent as long as it does not deform when a force is applied to the wafer WF in the direction away from the first double-sided adhesive sheet AT1 by the rotation of the upper table 160. The strength is preferably 50 MPa or more.
Further, as described later, the hardness of the second hard support 150 is such that it does not deform when a force is applied to the second double-sided adhesive sheet AT2 in the direction away from the wafer WF by the rotation of the upper table 160. Often, for example, the bending strength is preferably 50 MPa or more.
The reforming portion forming means 120 includes a laser irradiator 121.
The first fixing means 140 includes a lower decompression means 141 composed of a decompression pump, a vacuum ejector, or the like, and holds the lower table 130 by depressurizing the internal space of the lower table 130 connected via the pipe 142. The surface 131 is configured to be able to attract and hold the first rigid support 110.
The second fixing means 170 includes an upper decompression means 171 configured in the same manner as the lower decompression means 141, and holds the upper table 160 by depressurizing the internal space of the upper table 160 connected via the pipe 172. The surface 161 is configured to be able to attract and hold the second rigid support 150.
The first fixing means 140 and the second fixing means 170 include a lower decompression means 141 composed of a decompression pump, a vacuum ejector, and the like, and an upper decompression means 171 and are connected via a pipe 142 and a pipe 172. By decompressing the internal space of the lower table 130 and the upper table 160, the first hard support 110 and the second hard support 150 are formed on the holding surface 131 and the holding surface 161 of the lower table 130 and the upper table 160. It is configured to be able to suck and hold.
The relative moving means 180 includes a rotating motor 181 as a driving device arranged on the side of the lower table 130. The output shaft 182 of the rotary motor 181 is connected to an extension portion 162 extending downward from the end portion of the upper table 160.

The procedure for manufacturing the first thinning wafer WT1 and the second thinning wafer WT2 from the wafer WF in the above thinning wafer manufacturing apparatus 100 will be described.
First, as shown in FIG. 15A, a first rigid support 110 having the first adhesive surface AT11 of the first double-sided adhesive sheet AT1 attached to the support surface 111 is prepared, and the wafer WF shown by the alternate long and short dash line in the figure is prepared. The entire first surface WF1 is attached to the second adhesive surface AT12 as shown by the solid line. At this time, the first surface WF1 is attached to the second adhesive surface AT12 so that bubbles are not formed. The entire region of the first adhesive surface AT11 corresponding to the first surface WF1 is also preferably attached to the first hard support 110 so that air bubbles are not formed. Further, the method and order in which the first double-sided adhesive sheet AT1 is attached to the first hard support 110 and the first surface WF1 are not particularly limited. For example, after the first double-sided adhesive sheet AT1 is attached to the wafer WF, the first is attached. 1 It may be attached to the rigid support 110.

Next, as shown in FIG. 15B, a transport means (not shown) such as an operator or an articulated robot or a belt conveyor moves the wafer WF and the first rigid support 110 below the reforming portion forming means 120. The reforming portion forming means 120 drives the laser irradiator 121, and a relative moving mechanism (not shown) moves the laser irradiator 121 and the first hard support 110 in a relatively horizontal direction. The laser LB of the laser irradiator 121 irradiates the wafer WF in the same manner as in the above embodiment. By irradiating the laser LB, a plurality of modified portion RPs are formed inside the wafer WF. When a plurality of modified portion RPs are formed inside the wafer WF along the dividing surface DP, the modified portion forming means 120 stops driving the laser irradiator 121.

After that, as shown in FIG. 16A, the lower table 130 is located on the opposite side of the wafer WF with the first hard support 110 interposed therebetween, and the first adhesive surface of the second double-sided adhesive sheet AT2 is placed on the second hard support 150. AT21 is attached, the second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is attached to the entire second surface WF2 of the wafer WF, and the upper table 160 is located on the opposite side of the wafer WF with the second rigid support 150 sandwiched between them. To be in a state to do. At this time, the second surface WF2 is attached to the second adhesive surface AT22 so that bubbles are not formed. It is preferable that the entire region of the first adhesive surface AT21 corresponding to the second surface WF2 is also attached to the second hard support 150 so that air bubbles are not formed.
Then, the first fixing means 140 and the second fixing means 170 drive the lower decompression means 141 and the upper decompression means 171, respectively, and the first hard support 110 is placed on the holding surface 131 of the lower table 130 by the second hard. The support 150 is sucked and held by the holding surface 161 of the upper table 160, respectively. The first hard support 110 can be positioned on the lower table 130, the second double-sided adhesive sheet AT2 can be attached to the second hard support 150 and the second surface WF2, or the second hard support 150 can be placed on the upper table. The method and order of locating the table 160 below the table 160 are not particularly limited. For example, the second double-sided adhesive sheet AT2 may be attached to the second rigid support 150 and then attached to the second surface WF2. The pasting order may be reversed.

After that, as shown in FIG. 16B, the relative moving means 180 drives the rotation motor 181 to rotate the upper table 160 in the clockwise rotation direction, with the divided surface DP on which the plurality of reforming portion RPs are formed as a boundary. By dividing the wafer WF, the thinned first thinned wafer WT1 and the second thinned wafer WT2 are formed.

At this time, since the second adhesive surface AT12 of the first double-sided adhesive sheet AT1 is attached to the entire first surface WF1 of the wafer WF and the first adhesive surface AT11 is adhered to the first hard support 110, the upper table 160 When a force is applied to the wafer WF in the direction away from the first double-sided adhesive sheet AT1 due to the rotation of the wafer WF, the upper table 160 rotates while the deflection of the entire wafer WF is suppressed by the first rigid support 110. Therefore, the wafer WF can be divided without being damaged, and the first thinning wafer WT1 can be appropriately manufactured.
Further, since the second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is attached to the entire second surface WF2 of the wafer WF and the first adhesive surface AT21 is adhered to the second hard support 150, the upper table 160 When a force acts on the second double-sided adhesive sheet AT2 in the direction away from the wafer WF due to the rotation, the upper table 160 rotates while the bending of the entire wafer WF is suppressed by the second rigid support 150. Therefore, the wafer WF can be divided without being damaged, and the second thinned wafer WT2 can be appropriately manufactured.
Further, since the first hard support 110 and the second hard support 150 support the first thinning wafer WT1 and the second thinning wafer WT2, respectively, the first hard support 110 and the second hard support 110 and the second hard support 150 are supported. By holding the support 150, the first thinning wafer WT1 and the second thinning wafer WT2 can be easily transported.

Next, when an operator or a conveying means (not shown) holds the first thinning wafer WT1 and the second thinning wafer WT2, the first fixing means 140 and the second fixing means 170 respectively hold the lower decompression means 141 and the lower decompression means 141. The drive of the upper decompression means 171 is stopped, and the suction holding of the first thinning wafer WT1 and the first hard support 110 and the second hard support 150 supporting the second thinning wafer WT2 are released. ..
In the present embodiment, as the first fixing means 140 and the second fixing means 170, a configuration in which the first hard support 110 and the second hard support 150 are fixed by suction holding is applied. Unlike the case of fixing with an agent, it is not necessary to remove the adhesive component adhering to each of the holding surface 131 of the lower table 130 and the holding surface 161 of the upper table 160 after the adsorption holding is released, which reduces workability. Can be suppressed.
After that, when the conveying means (not shown) conveys the first thinning wafer WT1 and the second thinning wafer WT2 to the next step, each means drives each driving device and returns each member to the initial position. The same operation is repeated.

According to the thinning wafer manufacturing apparatus 100 as described above, the first thinning wafer WT1 and the second thinning wafer WT2 can be appropriately manufactured.

As a modification of the method for manufacturing a thin plate-shaped member using the thinning wafer manufacturing apparatus 100, for example, if the first hard support 110 is applied, the second hard support 150 is not applied. , The wafer WF may be adsorbed and held on the holding surface 161 of the upper table 160 directly or via the second double-sided adhesive sheet AT2.
If the second hard support 150 is applied, the wafer WF is sucked and held by the holding surface 131 of the lower table 130 directly or via the first double-sided adhesive sheet AT1 without applying the first hard support 110. In this case, the second hard support 150 and the second double-sided adhesive sheet AT2 correspond to the first hard support and the first double-sided adhesive sheet of the present invention, respectively.

In addition, the following points can also be applied to the above-described embodiment and modifications of the embodiment.
The materials, types, shapes, etc. of the first adhesive sheet AS1, the second adhesive sheet AS2, and the plate-shaped member are not particularly limited. For example, the first adhesive sheet AS1 and the second adhesive sheet AS2 may have a circular shape, an elliptical shape, a polygonal shape such as a triangle or a square shape, and other shapes, and have pressure-sensitive adhesiveness, heat-sensitive adhesiveness, and the like. When the heat-sensitive adhesive first adhesive sheet AS1 and second adhesive sheet AS2 are adopted, the first adhesive sheet AS1 and the second adhesive sheet AS2 are heated. Adhesion may be performed by an appropriate method such as providing an appropriate heating means such as a coil heater or a heating side of a heat pipe. Further, such a first adhesive sheet AS1 and a second adhesive sheet AS2 are, for example, a single layer having only an adhesive layer, a base material having an intermediate layer between the base material sheet and the adhesive layer, and a base material. It may be a so-called double-sided adhesive sheet having a cover layer on the upper surface of the sheet, or a so-called double-sided adhesive sheet capable of peeling the base sheet from the adhesive layer. It may have a single-layer or multi-layer intermediate layer, or may be a single-layer or multi-layer without an intermediate layer. Examples of plate-shaped members include foods, resin containers, semiconductor wafers (silicon semiconductor wafers and compound semiconductor wafers, etc.), circuit boards, information recording substrates (optical disks, etc.), glass plates, steel plates, pottery, wooden boards, and resins. Boards and the like, as well as members and articles of any form can also be targeted. The first adhesive sheet AS1 and the second adhesive sheet AS2 are replaced with functional and versatile readings, for example, information description labels, decorative labels, protective sheets, dicing tapes, die attach films, die bonding tapes, etc. And any sheet, film, tape, etc. of any shape such as a recording layer forming resin sheet can be attached to any plate-shaped member as described above.

The means and steps in the present invention are not limited as long as they can perform the operations, functions or steps described for the means and steps, much less the configuration of just one embodiment shown in the above embodiment. It is not limited to goods or processes at all. For example, the first sticking step is limited as long as the first adhesive sheet can be stuck on one surface of the plate-shaped member, in light of the common general technical knowledge at the time of filing, and within the technical scope. There is no such thing (explanation of other means and processes is omitted).
The drive equipment in the above embodiment includes electric equipment such as a rotary motor, a linear motor, a linear motor, a single-axis robot, and an articulated robot, an actuator such as an air cylinder, a hydraulic cylinder, a rodless cylinder, and a rotary cylinder. Can be adopted, and a combination thereof can be directly or indirectly adopted (some of them overlap with those illustrated in the embodiment).

10: Thinning wafer manufacturing equipment (thinning plate-shaped member manufacturing equipment)
100: Thinning wafer manufacturing equipment (thinning plate-shaped member manufacturing equipment)
30A: Modified part forming means 320: Drive part 322: Arm part 323: Laser irradiator DP: Divided surface LB: Laser RP: Modified part WF: Wafer (plate-shaped member)
WF1: First surface WF2: Second surface WT1: First thinned wafer (first thinned plate-shaped member)
WT2: Second thinning wafer (second thinning plate-like member)

Claims (28)

A laser irradiation process that irradiates a plate-shaped member with a laser,
The plate-shaped member is divided along a dividing surface to form at least a first thinned plate-shaped member and a second thinned plate-shaped member.
In the step of irradiating the plate-shaped member with a laser, a plurality of modified portions are formed inside the plate-shaped member along the divided surface.
The thickness of the first thin plate-shaped member is smaller than the thickness of the plate-shaped member.
The thickness of the second thin plate-shaped member is smaller than the thickness of the plate-shaped member.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 1,
In the laser irradiation step, a plurality of the modified portions are applied to the plate-shaped member while moving the position of the laser irradiation point from the outer peripheral side of the plate-shaped member to the central portion side of the plate-shaped member. Form at regular intervals,
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 1,
In the laser irradiation step, a plurality of the modified portions are formed on the plate-shaped member while moving the position of the irradiation point of the laser.
The distance between the irradiation points on the outer peripheral side of the plate-shaped member and the distance between the irradiation points on the central portion side of the plate-shaped member are different.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 3,
The distance between the irradiation points on the outer peripheral side of the plate-shaped member is smaller than the distance between the irradiation points on the central portion side of the plate-shaped member.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 3 or 4.
The distance between the irradiation points increases from the outer peripheral side of the plate-shaped member toward the central portion side of the plate-shaped member.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 4 or 5.
The plate-shaped member includes a first region on the outer peripheral side of the plate-shaped member, a second region on the central portion side of the plate-shaped member, and a third region between the first region and the second region. And have
The first region is irradiated with the laser at a plurality of locations at the first interval.
The laser is applied to a plurality of locations at a third interval on the third region.
The second region is irradiated with the laser at a plurality of locations at a second interval.
The first interval is smaller than the third interval,
The third interval is smaller than the second interval.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 2 to 6.
By moving at least one of the laser irradiator for irradiating the laser and the plate-shaped member, the position of the irradiation point of the laser in the laser irradiation step is moved.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 7.
By rotating at least one of the laser irradiator and the plate-shaped member, the position of the laser irradiation point in the laser irradiation step is moved.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 7 or 8.
A plurality of the lasers are simultaneously irradiated from the laser irradiator.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 9.
The thickness of the plate-shaped member is 3 mm or less.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 10.
At least one of the thickness of the first thin plate-shaped member and the thickness of the second thin plate-shaped member is 500 μm or less.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 11.
The laser is irradiated along the dividing surface at intervals of 1 μm or more and 350 μm or less.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 12.
The plurality of modified portions overlap each other.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 12.
The plurality of reforming portions are separated from each other.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 14.
The plate-shaped member has a first surface and a second surface opposite to the first surface.
The laser is irradiated from at least one surface side of the first surface and the second surface.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 15,
A protective sheet is laminated on at least one of the first surface and the second surface.
A method for manufacturing a thin plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 16.
The laser is irradiated from the surface side of the plate-shaped member on which the protective sheet is laminated to form a plurality of the modified portions inside the plate-shaped member.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 17.
In the dividing step, the plate-shaped member is separated in the thickness direction of the plate-shaped member, so that the first thinned plate-shaped member and the thinned plate-shaped member are defined with the divided surface on which a plurality of the modified portions are formed as a boundary. The process of dividing into the second thin plate-shaped member,
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 18.
The surface of the plate-shaped member has a circuit.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 19.
The first thin plate-shaped member has a first exposed surface that appears due to the division of the plate-shaped member in the dividing step.
The second thin plate-shaped member has a second exposed surface that appears due to the division of the plate-shaped member in the dividing step.
It has a polishing step of polishing at least one of the first exposed surface and the second exposed surface.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 20.
A circuit forming step of forming a circuit on at least one surface of the first thinned plate-shaped member and the second thinned plate-shaped member is further provided.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 21.
The material of the plate-shaped member is selected from the group consisting of silicon, silicon nitride, gallium nitride, silicon carbide, sapphire, gallium arsenide, and glass.
A method for manufacturing a thin plate-shaped member. The method for manufacturing a thin plate-shaped member according to any one of claims 1 to 22.
The plate-shaped member is a wafer.
A method for manufacturing a thin plate-shaped member. A modified portion forming means for forming a plurality of modified portions inside a plate-shaped member,
A dividing means for dividing the modified plate-shaped member into at least a first thinned plate-shaped member and a second thinned plate-shaped member is provided.
The modified portion forming means includes an arm portion, a laser irradiator that irradiates a laser, and a drive portion that rotatably supports the arm portion.
The laser irradiator is supported by the arm portion so as to be slidable.
A device for manufacturing thin plate-shaped members. In the apparatus for manufacturing a thin plate-shaped member according to claim 24.
The modified portion forming means has a plurality of the laser irradiators.
A device for manufacturing thin plate-shaped members. In the apparatus for manufacturing a thin plate-shaped member according to claim 24 or 25.
The laser irradiator can irradiate a plurality of lasers at the same time.
A device for manufacturing thin plate-shaped members. In the apparatus for manufacturing a thin plate-shaped member according to claim 26.
The laser irradiator can increase and decrease the irradiation interval between the plurality of lasers.
A device for manufacturing thin plate-shaped members. The apparatus for manufacturing a thin plate-shaped member according to any one of claims 24 to 27.
Further having a holding means for rotatably supporting the plate-shaped member.
A device for manufacturing thin plate-shaped members.

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