JPWO2018180724A1 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JPWO2018180724A1 JPWO2018180724A1 JP2019509357A JP2019509357A JPWO2018180724A1 JP WO2018180724 A1 JPWO2018180724 A1 JP WO2018180724A1 JP 2019509357 A JP2019509357 A JP 2019509357A JP 2019509357 A JP2019509357 A JP 2019509357A JP WO2018180724 A1 JPWO2018180724 A1 JP WO2018180724A1
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- film
- emitting device
- semiconductor light
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 185
- 239000010410 layer Substances 0.000 description 98
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 48
- 238000000034 method Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 229910052791 calcium Inorganic materials 0.000 description 11
- 239000011575 calcium Substances 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 229910052712 strontium Inorganic materials 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 8
- 235000005811 Viola adunca Nutrition 0.000 description 8
- 240000009038 Viola odorata Species 0.000 description 8
- 235000013487 Viola odorata Nutrition 0.000 description 8
- 235000002254 Viola papilionacea Nutrition 0.000 description 8
- 229910052788 barium Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 4
- 150000004645 aluminates Chemical class 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000007735 ion beam assisted deposition Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- -1 Al alone Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical compound F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- UAHZTKVCYHJBJQ-UHFFFAOYSA-N [P].S=O Chemical compound [P].S=O UAHZTKVCYHJBJQ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- IBIRZFNPWYRWOG-UHFFFAOYSA-N phosphane;phosphoric acid Chemical compound P.OP(O)(O)=O IBIRZFNPWYRWOG-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
式1:0.9(λ1/(4×n1))≦d1≦1.1(λ1/(4×n1))
式2:0.9(λ2/(4×n2))≦d2≦1.1(λ2/(4×n2))
式3:n1>n2
式4:20≦|λ1−λ2|
式5:380≦λ1≦430
式6:380≦λ2≦430
実装基板としてガラス基板を用意した。ガラス基板上に、表1に示した多層反射膜を形成した。紫外可視分光光度計(島津製作所製UV−2600)を用いて形成した反射膜の反射率測定を行った。
0.9(λ1/(4×n1))≦d1≦1.1(λ1/(4×n1))、
0.9(λ2/(4×n2))≦d2≦1.1(λ2/(4×n2))、
n1>n2、
20≦|λ1−λ2|、380≦λ1≦430、380≦λ2≦430。
サファイア基板はPSSとし、微細凹凸を設けた。その上に半導体層を設けた。電極や透光電極を設けて半導体発光素子を作製した。それぞれ半導体発光素子の面積を表5に示す。半導体発光素子の面積は発光層を上からみたときの面積とした。作製した半導体発光素子のサファイア基板に、半導体発光素子とは反対側に実施例1〜14および比較例3、4の多層反射膜を設けた。作製した各半導体発光素子に対し、発光効率を求めた。発光効率の測定方法は以下の通りである。作製した半導体発光素子を表5の面積に切断し、実装基板上に銀ペーストや半田、透明な接着剤などを使用して固定し、金ワイヤーなどを用いて実装基板との導通を確保した。実装した半導体発光素子を積分球を有する全光束測定システム(大塚電子製MCPD9800)を用いて、全光束測定を実施し、得られた結果から半導体発光素子の外部量子効率を算出した。
実施例15〜28および比較例5、6の半導体発光素子と蛍光体を組み合わせて実施例15A〜28A、比較例5A、6Aの白色発光装置を作製した。蛍光体は、青色蛍光体としてハロリン酸塩蛍光体(ピーク波長480nm)、緑色蛍光体としてケイ酸塩蛍光体(ピーク波長560nm)、赤色蛍光体として窒化物蛍光体(ピーク波長620nm)を用いた。3種類の蛍光体を樹脂に混合して、半導体発光素子上に塗布、乾燥させて白色発光装置とした。各発光装置に対して、全光束を測定した。全光束の測定は、実施例15と同様の方法で測定した。比較例5Aの発光効率を100としたときの相対効率で示す。結果を表6に示す。
Claims (11)
- 発光ピーク波長が395nm以上425nm以下である半導体発光素子であって、
第1の面と第2の面とを備え、前記第1の面および前記第2の面からなる群より選択される少なくとも一つの面が凹凸を有する基板と、
前記第1の面に接する半導体層と、
前記第2の面または前記半導体層の表面に接する多層反射膜と、を具備し、
前記多層反射膜は、複数の第1の誘電体膜と複数の第2の誘電体膜とを有し且つ前記第1の誘電体膜および前記第2の誘電体膜が交互に積層された構造を備える、半導体発光素子。 - フェイスアップ型である、請求項1に記載の半導体発光素子。
- 前記第1の誘電体膜および前記第2の誘電体膜は、
式1:0.9(λ1/(4×n1))≦d1≦1.1(λ1/(4×n1))、
式2:0.9(λ2/(4×n2))≦d2≦1.1(λ2/(4×n2))、
式3:n1>n2、
式4:20≦|λ1−λ2|、
式5:380≦λ1≦430、および
式6:380≦λ2≦430
(式1〜6中、前記d1は、前記第1の誘電体膜の膜厚(nm)を表し、前記n1は、前記第1の誘電体膜の屈折率を表し、前記d2は、前記第2の誘電体膜の膜厚(nm)を表し、前記n2は、前記第2の誘電体膜の屈折率を表し、前記λ1は、380nm以上430nm以下の波長範囲から選ばれる第1の波長(nm)を表し、前記λ2は、前記波長範囲から選ばれる第2の波長(nm)を表す)
を満たす、請求項1に記載の半導体発光素子。 - 前記複数の第1の誘電体膜の少なくとも一つの膜厚は、
式7:d1=λp/(4×n1)
(式7中、前記d1は、前記第1の誘電体膜の膜厚(nm)を表し、前記n1は、前記第1の誘電体膜の屈折率を表し、前記λpは、前記発光ピーク波長を表す)
で表される前記d1の値から1nm以上ずれた値である、請求項3に記載の半導体発光素子。 - 前記複数の第2の誘電体膜の少なくとも一つの膜厚は、
式8:d2=λp/(4×n2)
(式7中、前記d2は、前記第2の誘電体膜の膜厚(nm)を表し、前記n2は、前記第2の誘電体膜の屈折率を表し、前記λpは、前記発光ピーク波長を表す)
で表される前記d2の値から1nm以上ずれた値である、請求項3に記載の半導体発光素子。 - 前記第1の誘電体膜は、酸化チタン、酸化ジルコニウム、窒化珪素、酸化ニオブ、および酸化タンタルからなる群より選択される少なくとも1つを含む、請求項1に記載の半導体発光素子。
- 前記第2の誘電体膜は、酸化珪素、フッ化マグネシウム、およびフッ化カルシウムからなる群より選ばれる少なくとも1つを含む、請求項1に記載の半導体発光素子。
- 前記複数の第1の誘電体膜は、3以上の前記第1の誘電体膜を有し、
前記複数の第2の誘電体膜は、3以上の前記第2の誘電体膜を有する、請求項1に記載の半導体発光素子。 - 前記多層反射膜の表面に設けられた金属反射膜をさらに具備する、請求項1に記載の半導体発光素子。
- 前記金属反射膜は、Au、Ag、およびAlからなる群より選択される少なくとも一つの元素を含む、請求項9に記載の半導体発光素子。
- 前記半導体発光素子の面積は、0.1mm2以上である、請求項1に記載の半導体発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017062990 | 2017-03-28 | ||
JP2017062990 | 2017-03-28 | ||
PCT/JP2018/010863 WO2018180724A1 (ja) | 2017-03-28 | 2018-03-19 | 半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018180724A1 true JPWO2018180724A1 (ja) | 2020-02-06 |
JP7125720B2 JP7125720B2 (ja) | 2022-08-25 |
Family
ID=63675499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019509357A Active JP7125720B2 (ja) | 2017-03-28 | 2018-03-19 | 半導体発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11211526B2 (ja) |
JP (1) | JP7125720B2 (ja) |
KR (1) | KR102238351B1 (ja) |
WO (1) | WO2018180724A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017115798A1 (de) * | 2017-07-13 | 2019-01-17 | Alanod Gmbh & Co. Kg | Reflektierendes Verbundmaterial, insbesondere für oberflächenmontierte Bauelemente (SMD), und lichtemittierende Vorrichtung mit einem derartigen Verbundmaterial |
WO2024096154A1 (ko) * | 2022-11-02 | 2024-05-10 | 엘지전자 주식회사 | 반도체 발광 소자 및 디스플레이 장치 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03291985A (ja) * | 1990-04-09 | 1991-12-24 | Nec Corp | 半導体発光素子 |
JP2007081368A (ja) * | 2004-06-14 | 2007-03-29 | Mitsubishi Cable Ind Ltd | 窒化物系半導体発光素子 |
JP2011109094A (ja) * | 2009-11-13 | 2011-06-02 | Seoul Opto Devices Co Ltd | 分布ブラッグ反射器を有する発光ダイオードチップ、その製造方法及び分布ブラッグ反射器を有する発光ダイオードパッケージ |
WO2014058069A1 (ja) * | 2012-10-12 | 2014-04-17 | エルシード株式会社 | 半導体発光素子及びその製造方法 |
JP2014524674A (ja) * | 2011-09-01 | 2014-09-22 | 株式会社東芝 | 発光ダイオード装置 |
US20160013383A1 (en) * | 2014-07-14 | 2016-01-14 | Epistar Corporation | Light-emitting device |
JP2016146407A (ja) * | 2015-02-06 | 2016-08-12 | 豊田合成株式会社 | 光学多層膜および発光素子 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2313722B2 (de) | 1973-03-20 | 1977-08-11 | Bayer Ag, 5090 Leverkusen | Chromischkomplex-farbstoffe und ihre verwendung zum faerben und bedrucken von stickstoffhaltigen fasermaterialien |
US5226053A (en) * | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
WO2005122290A1 (ja) | 2004-06-14 | 2005-12-22 | Mitsubishi Cable Industries, Ltd. | 窒化物系半導体発光素子 |
JP4865047B2 (ja) * | 2010-02-24 | 2012-02-01 | 株式会社東芝 | 結晶成長方法 |
KR101364720B1 (ko) * | 2010-07-28 | 2014-02-19 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 갖는 발광 다이오드 |
WO2012015153A2 (en) | 2010-07-28 | 2012-02-02 | Seoul Opto Device Co., Ltd. | Light emitting diode having distributed bragg reflector |
KR101158075B1 (ko) * | 2010-08-10 | 2012-06-22 | 서울옵토디바이스주식회사 | 분포 브래그 반사기를 갖는 발광 다이오드 |
US20130240937A1 (en) * | 2010-09-01 | 2013-09-19 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof |
US9112120B2 (en) | 2011-02-09 | 2015-08-18 | Kabushiki Kaisha Toshiba | White light source and white light source system including the same |
JP5961740B1 (ja) | 2015-04-09 | 2016-08-02 | エルシード株式会社 | 光学装置及び発光素子 |
-
2018
- 2018-03-19 KR KR1020197027112A patent/KR102238351B1/ko active IP Right Grant
- 2018-03-19 JP JP2019509357A patent/JP7125720B2/ja active Active
- 2018-03-19 WO PCT/JP2018/010863 patent/WO2018180724A1/ja active Application Filing
-
2019
- 2019-09-16 US US16/572,468 patent/US11211526B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03291985A (ja) * | 1990-04-09 | 1991-12-24 | Nec Corp | 半導体発光素子 |
JP2007081368A (ja) * | 2004-06-14 | 2007-03-29 | Mitsubishi Cable Ind Ltd | 窒化物系半導体発光素子 |
JP2011109094A (ja) * | 2009-11-13 | 2011-06-02 | Seoul Opto Devices Co Ltd | 分布ブラッグ反射器を有する発光ダイオードチップ、その製造方法及び分布ブラッグ反射器を有する発光ダイオードパッケージ |
JP2014524674A (ja) * | 2011-09-01 | 2014-09-22 | 株式会社東芝 | 発光ダイオード装置 |
WO2014058069A1 (ja) * | 2012-10-12 | 2014-04-17 | エルシード株式会社 | 半導体発光素子及びその製造方法 |
US20160013383A1 (en) * | 2014-07-14 | 2016-01-14 | Epistar Corporation | Light-emitting device |
JP2016146407A (ja) * | 2015-02-06 | 2016-08-12 | 豊田合成株式会社 | 光学多層膜および発光素子 |
Also Published As
Publication number | Publication date |
---|---|
KR102238351B1 (ko) | 2021-04-09 |
KR20200066590A (ko) | 2020-06-10 |
US20200013924A1 (en) | 2020-01-09 |
JP7125720B2 (ja) | 2022-08-25 |
US11211526B2 (en) | 2021-12-28 |
WO2018180724A1 (ja) | 2018-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6595055B2 (ja) | 発光デバイス及び波長変換材料を含む光共振器 | |
US20190221730A1 (en) | Light-emitting diode (led), led package and apparatus including the same | |
KR102380825B1 (ko) | 반도체 발광다이오드 칩 및 이를 구비한 발광장치 | |
CN101017869B (zh) | 氮化物基半导体发光器件及其制造方法 | |
JP4020092B2 (ja) | 半導体発光装置 | |
US9142715B2 (en) | Light emitting diode | |
JP2005183911A (ja) | 窒化物半導体発光素子及び製造方法 | |
TW201419592A (zh) | 發光裝置 | |
JP2013527617A (ja) | 発光デバイスのためのフィルタ | |
WO2021195863A1 (zh) | 一种半导体发光元件 | |
JP2016163045A (ja) | 発光素子パッケージ及びこれを含む照明装置 | |
JP2005109289A (ja) | 発光装置 | |
JP2005268601A (ja) | 化合物半導体発光素子 | |
US11211526B2 (en) | Semiconductor light-emitting element | |
JP2011258657A (ja) | 半導体発光装置および半導体発光装置の製造方法 | |
US9112089B2 (en) | Semiconductor chip, display comprising a plurality of semiconductor chips and methods for the production thereof | |
US20120126203A1 (en) | High Power LED Device Architecture Employing Dielectric Coatings and Method of Manufacture | |
TW201603315A (zh) | 發光元件 | |
KR101157705B1 (ko) | 몰드부로부터 분리된 형광체부를 구비한 발광 소자 | |
US11367810B2 (en) | Light-altering particle arrangements for light-emitting devices | |
JP2014053579A (ja) | 発光ダイオード素子および発光装置 | |
KR100550846B1 (ko) | 플립칩 본딩 구조의 질화 갈륨계 발광다이오드 | |
KR100774995B1 (ko) | Zn화합물층을 갖는 수직형 발광다이오드와 그 제조방법 | |
KR20150113525A (ko) | 광학 구조물을 구비하는 발광 소자 | |
JP5455854B2 (ja) | 半導体発光装置および半導体発光装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200903 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210713 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210909 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220316 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220803 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7125720 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |