JPWO2018150536A1 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents
基板処理装置、半導体装置の製造方法およびプログラム Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 252
- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000012546 transfer Methods 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 description 81
- 239000007789 gas Substances 0.000 description 57
- 239000011261 inert gas Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000003860 storage Methods 0.000 description 11
- 239000012495 reaction gas Substances 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 4
- 101100438971 Caenorhabditis elegans mat-1 gene Proteins 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Abstract
Description
基板保持具に保持されたN(5≦N≦50)枚の基板を処理する縦型処理炉と、
前記縦型処理炉の下方に配置され、前記基板保持具を前記縦型処理炉に搬送する搬送室と、
前記搬送室に隣接し、前記基板をM(1≦M<10)枚ずつ処理し、少なくとも2段以上積層して配置されている複数の枚葉処理炉と、
前記搬送室および前記複数の枚葉処理炉に隣接し、前記基板を移載する移載機が設置される移載室と、を備える技術が提供される。
処理炉4Aは、N(5≦N≦50)枚の基板を一度に処理する縦型処理炉で構成される。
図3に示すように、処理炉4Aは、円筒形状の反応管10Aと、反応管10Aの外周に設置された加熱手段(加熱機構)としてのヒータ12Aとを備える。反応管は、例えば石英やSiCにより形成される。反応管10Aの内部には、基板としてのウエハWを処理する処理室(縦型処理室)14Aが形成される。反応管10Aには、温度検出器としての温度検出部16Aが設置される。温度検出部16Aは、反応管10Aの内壁に沿って立設されている。
図2に示すように、処理炉4Bは、基板をM(1≦M<10)枚ずつ処理する枚葉処理装置PM1〜PMn(2≦n)が、搬送室6Aに相当する位置に上下にn段積層された構成である。以下、例えば、基板を1枚処理する場合の枚葉処理装置の構成について説明する。
ステップS11では、例えば、25枚のウエハWを保持できるボート26Aに対してウエハWを搬送する。移載室8A内および搬送室6A内の酸素濃度が30ppm以下に維持されていることを確認すると、ゲートバルブ90Aを開き、ボート26Aに対してウエハWを搬送し、ウエハWがボート26Aに装填(ウエハチャージ)されると、ゲートバルブ90Aが閉じられる。
ステップS12では、ボート26Aを処理室14A内に搬入(ボートロード)する。ボート26Aは、ボートエレベータ32Aによって処理室14A内に搬入され、反応管10Aの下部開口は蓋部22Aによって気密に閉塞(シール)された状態となる。
ステップS13では、ウエハWに対して所定の基板処理を行う。例えば、ウエハWに対して、原料ガスとしてDCS(SiH2 Cl2 :ジクロロシラン)ガスと、反応ガスとしてO2 (酸素)ガスとを供給することで、ウエハW上にシリコン酸化(SiO2)膜を形成する。
ヒータ12Aの加熱によって処理室14A内の温度が予め設定された処理温度に安定すると、処理室14A内のウエハWに対してDCSガスを供給する。DCSガスは、MFC38aにて所望の流量となるように制御され、ガス供給管36aおよびノズル44aを介して処理室14A内に供給される。
次に、DCSガスの供給を停止し、真空ポンプ52Aにより処理室14A内を真空排気する。この時、不活性ガス供給部から不活性ガスとしてN2ガスを処理室14A内に供給しても良い(不活性ガスパージ)。
次に、処理室14A内のウエハWに対してO2ガスを供給する。O2ガスは、MFC38bにて所望の流量となるように制御され、ガス供給管36bおよびノズル44bを介して処理室14A内に供給される。
次に、O2ガスの供給を停止し、真空ポンプ52Aにより処理室14A内を真空排気する。この時、不活性ガス供給部からN2ガスを処理室14A内に供給しても良い(不活性ガスパージ)。
処理温度(ウエハ温度):300℃〜700℃、
処理圧力(処理室内圧力):1Pa〜4000Pa、
DCSガス:100sccm〜10000sccm、
O2ガス:100sccm〜10000sccm、
N2ガス:100sccm〜10000sccm、
それぞれの処理条件を、それぞれの範囲内の値に設定することで、成膜処理を適正に進行させることが可能となる。
ステップS14では、ボート26Aを反応管10Aから搬出(ボートアンロード)する。所定膜厚の膜を形成した後、不活性ガス供給部からN2ガスが供給され、処理室14A内がN2ガスに置換されると共に、処理室14Aの圧力が常圧に復帰される。その後、ボートエレベータ32Aにより蓋部22Aが降下されて、ボート26Aが反応管10Aから搬出される。
ステップS15では、移載室8A内の酸素濃度が30ppm以下に維持されていることを確認すると、ゲートバルブ90Aを開き、処理済ウエハWをボート26Aより取り出し(ウエハディスチャージ)、FOUP5に収納する。処理モジュール3Aでは、ステップS15が終了すると(ステップS11)に戻り、次のウエハWの処理を行う。
ステップS21では、処理炉4Aで処理され、FOUP5に収納されたウエハWを枚葉装置PM1に搬送する。移載室8A内の酸素濃度が30ppm以下に維持されていることを確認すると、ゲートバルブ335が開かれ、移載機7によりウエハWが処理炉301に搬入される。その後、ゲートバルブ335が閉じられる。枚葉装置PM1へのウエハの搬送が終わると、続けてPM2、・・・、PMnへとウエハWを順次搬送する。
ウエハ搬送が完了した枚葉装置PMnから順に、ウエハWに対して、所定の基板処理を行う。すなわち、複数のPMにおいて基板処理が同じタイミングで、並行して実施される。例えば、ヒータ307によりウエハWを加熱することで、ウエハWをアニール処理する。この時、ウエハWに対して不活性ガスとしてN2ガスを供給しても良い。
処理温度(ウエハ温度):300℃〜800℃、
処理圧力(処理室内圧力):0.1Pa〜300Pa、
それぞれの処理条件を、それぞれの範囲内の値に設定することで、所望の基板処理を適正に進行させることが可能となる。
基板処理が完了した枚葉装置PMnから順に、移載室8A内の酸素濃度が30ppm以下に維持されていることを確認し、ゲートバルブ335が開かれる。ウエハWが処理炉301内から搬出されると、ゲートバルブ335が閉じられる。ウエハWは元のFOUPに収納される。
本実施形態によれば、以下に示す1つ又は複数の効果が得られる。
(2)枚葉処理装置を上下に多段に積層することにより、装置のフットプリントの増加を抑制することができ、デバイスの製造コストを抑えることができる。
(3)縦型装置で処理済みの基板を多段に積層した枚葉装置で平行して順次処理することにより、次バッチ処理の待ち時間が解消し、処理装置全体のTATを短縮することができ、生産性を向上させることができる。
本実施形態は上述の態様に限定されず、以下に示す変形例のように変更することができる。
上述において、基板を搬送する際、移載室8A内や搬送室6A内の酸素濃度が30ppm以下に維持されていることを確認し、ゲートバルブ90Aやゲートバルブ335を開けるようにした。この時、移載室8A内や搬送室6A内の圧力は大気圧であっても良い。また、移載室8A内や搬送室6A内の雰囲気がN2雰囲気であっても良い。このような構成により、ウエハWの自然酸化を抑制することができる。
4A、4B・・・処理炉
26A・・・ボート
Claims (12)
- 基板保持具に保持されたN(5≦N≦50)枚の基板を処理する縦型処理炉と、
前記縦型処理炉の下方に配置され、前記基板保持具を前記縦型処理炉に搬送する搬送室と、
前記搬送室に隣接し、前記基板をM(1≦M<10)枚ずつ処理し、少なくとも2段以上積層して配置されている複数の枚葉処理炉と、
前記搬送室および前記複数の枚葉処理炉に隣接し、前記基板を移載する移載機が設置される移載室と、を備える基板処理装置。 - 前記複数の枚葉処理炉は、前記搬送室の高さ内に収まるように配置されている請求項1に記載の基板処理装置。
- 前記縦型処理炉は、前記縦型処理炉の下方から前記基板保持具を搬入出する開口部を有し、
前記複数の枚葉処理炉は、前記移載室に対面する側方から前記基板を搬入出する搬入口をそれぞれ有し、
前記開口部よりも、前記搬入口の方が低い位置に形成される請求項2に記載の基板処理装置。 - 前記複数の枚葉処理炉の内、最上段の枚葉処理炉の前記搬入口は、前記開口部と前記基板保持具の上端部との間に収まるように配置される請求項3に記載の基板処理装置。
- 前記複数の枚葉処理炉の内、最下段の枚葉処理炉の前記搬入口の高さ位置は、前記基板保持具の最下段の基板と同じ高さ位置以上である請求項4に記載の基板処理装置。
- 前記基板を搬送する時は、前記移載室内の酸素濃度を30ppm以下とする請求項5に記載の基板処理装置。
- 前記基板を前記搬送室と前記移載室との境界壁にゲートバルブを有し、
前記ゲートバルブは、前記搬送室内および前記移載室内の酸素濃度が30ppm以下の時に開となるよう構成される請求項6に記載の基板処理装置。 - 縦型処理炉で処理する枚数と同じ枚数の前記基板を、前記縦型処理炉における基板処理時間内に前記複数の枚葉処理炉で基板処理が完了するように前記枚葉処理炉の台数、前記枚葉処理炉の処理枚数および前記枚葉処理炉の時間を決定する請求項7に記載の基板処理装置。
- 前記縦型処理炉における基板処理と、前記複数の枚葉処理炉における基板処理とを並行して行う請求項8に記載の基板処理装置。
- 基板保持具に保持されたN(5≦N≦50)枚の基板を縦型処理炉で処理する工程と、
前記基板保持具を前記縦型処理炉の下方に配置された搬送室に搬出する工程と、
前記搬送室に隣接し、前記基板をM(1≦M<10)枚ずつ処理し、少なくとも2段以上積層して配置されている複数の枚葉処理炉で前記基板を処理する工程と、
を有する半導体装置の製造方法。 - 前記縦型処理炉で処理する工程と、前記複数の枚葉処理炉で前記基板を処理する工程とを並行して行う請求項10に記載の半導体装置の製造方法。
- 基板保持具に保持されたN(5≦N≦50)枚の基板を縦型処理炉で処理する手順と、
前記基板保持具を前記縦型処理炉の下方に配置された搬送室に搬出する手順と、
前記搬送室に隣接し、前記基板をM(1≦M<10)枚ずつ処理し、少なくとも2段以上積層して配置されている複数の枚葉処理炉で前記基板を処理する手順と、
をコンピュータにより基板処理装置に実行させるプログラム。
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