JPWO2018142758A1 - 電解コンデンサ - Google Patents
電解コンデンサ Download PDFInfo
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- JPWO2018142758A1 JPWO2018142758A1 JP2018565969A JP2018565969A JPWO2018142758A1 JP WO2018142758 A1 JPWO2018142758 A1 JP WO2018142758A1 JP 2018565969 A JP2018565969 A JP 2018565969A JP 2018565969 A JP2018565969 A JP 2018565969A JP WO2018142758 A1 JPWO2018142758 A1 JP WO2018142758A1
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- 239000003990 capacitor Substances 0.000 title claims abstract description 121
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 23
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 21
- 150000004692 metal hydroxides Chemical class 0.000 claims abstract description 12
- 229910000000 metal hydroxide Inorganic materials 0.000 claims abstract description 11
- 238000009413 insulation Methods 0.000 claims abstract 2
- 229920005989 resin Polymers 0.000 claims description 79
- 239000011347 resin Substances 0.000 claims description 79
- 239000002245 particle Substances 0.000 claims description 49
- 239000000945 filler Substances 0.000 claims description 29
- 239000007784 solid electrolyte Substances 0.000 claims description 16
- 229920001940 conductive polymer Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000010292 electrical insulation Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 2
- 239000000347 magnesium hydroxide Substances 0.000 claims description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- -1 metal oxide hydrates Chemical class 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
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- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 229910021536 Zeolite Inorganic materials 0.000 description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
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- 239000010457 zeolite Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
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- 239000012298 atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002697 manganese compounds Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/08—Cooling arrangements; Heating arrangements; Ventilating arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0003—Protection against electric or thermal overload; cooling arrangements; means for avoiding the formation of cathode films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
Description
本発明の第1実施形態に係る電解コンデンサは、コンデンサ素子と、コンデンサ素子と電気的に接続されたリード部材と、コンデンサ素子およびリード部材の一部を封止する外装部材と、外装部材の表面の少なくとも一部を覆う遮熱層と、を備える。
本発明の第2実施形態に係る電解コンデンサは、コンデンサ素子と、コンデンサ素子と電気的に接続されたリード部材と、コンデンサ素子を覆うとともにリード部材の一部を覆う外装樹脂層L2と、を備える。
第1〜第3実施形態のいずれにおいても、外装樹脂層は、硬化性樹脂組成物の硬化物を含むことが好ましく、熱可塑性樹脂もしくはそれを含む組成物を含んでもよい。硬化性樹脂組成物や熱可塑性樹脂(組成物)については、後述で例示するものを用いることができる。
外装部材が外装樹脂層である場合、電解コンデンサには、例えば、積層型のコンデンサ素子が用いられる。積層型のコンデンサ素子は、例えば、陽極体と、陽極体を覆う誘電体層と、誘電体層を覆う陰極部とを備える。陰極部は、誘電体層を覆う固体電解質層と、固体電解質層を覆う陰極引出層とを備える。
積層型のコンデンサ素子を用いる場合、リード部材としては、例えば、リードフレームが用いられる。巻回型のコンデンサ素子を用いる場合、リード部材は、コンデンサ素子に接続されるリードタブと、リードタブの端部に接続されるリード線とを備える。リード線は、上記の封口部材を貫通する。
図1に示すように、電解コンデンサ1は、コンデンサ素子2と、コンデンサ素子2と電気的に接続された陽極端子4(陽極側のリード部材)および陰極端子5(陰極側のリード部材)と、コンデンサ素子2と陽極端子4および陰極端子5の一部とを覆う外装樹脂層3と、を備える。陽極端子4および陰極端子5の一部は、外装樹脂層3の外部に露出する。外装樹脂層3は、ほぼ直方体の外形を有しており、電解コンデンサ1もほぼ直方体の外形を有している。陽極端子4および陰極端子5には、リードフレームが用いられる。リードフレームの素材には、例えば、銅または銅合金などが用いられる。
第1および第2実施形態のいずれにおいても、外装樹脂層は、硬化性樹脂組成物の硬化物を含むことが好ましく、熱可塑性樹脂もしくはそれを含む組成物を含んでもよい。硬化性樹脂組成物や熱可塑性樹脂(組成物)については、後述で例示するものを用いることができる。
Claims (12)
- コンデンサ素子と、
前記コンデンサ素子と電気的に接続されたリード部材と、
前記コンデンサ素子および前記リード部材の一部を封止する外装部材と、
前記外装部材の表面の少なくとも一部を覆うとともに、電気的絶縁性を有する遮熱層と、を備え、
前記遮熱層は、金属酸化物および金属水酸化物の少なくとも一方を含む、電解コンデンサ。 - 前記金属酸化物は、酸化アルミニウム、酸化マグネシウム、酸化ケイ素、酸化チタン、および酸化ジルコニウムよりなる群から選択される少なくとも1種である、請求項1に記載の電解コンデンサ。
- 前記金属水酸化物は、水酸化マグネシウムおよび水酸化アルミニウムの少なくとも一方である、請求項1または2に記載の電解コンデンサ。
- 前記遮熱層は、前記金属酸化物および前記金属水酸化物の少なくとも一方と、樹脂とを含む、請求項1〜3のいずれか1項に記載の電解コンデンサ。
- 前記金属酸化物および前記金属水酸化物の少なくとも一方は、多孔質粒子を形成している、請求項1〜4のいずれか1項に記載の電解コンデンサ。
- 前記外装部材は、前記コンデンサ素子を覆うとともに前記リード部材の一部を覆う外装樹脂層であり、
前記外装樹脂層がフィラーを含み、
前記多孔質粒子が前記フィラーよりも多孔質である、請求項5に記載の電解コンデンサ。 - 前記遮熱層の厚みは、1μm以上100μm以下である、請求項1〜6のいずれか1項に記載の電解コンデンサ。
- コンデンサ素子と、
前記コンデンサ素子と電気的に接続されたリード部材と、
前記コンデンサ素子を覆うとともに前記リード部材の一部を覆う外装樹脂層と、
を備え、
前記外装樹脂層は、電気的絶縁性を有する多孔質粒子を含む、電解コンデンサ。 - 前記外装樹脂層は、フィラーを含み、
前記多孔質粒子は、前記フィラーよりも多孔質である、請求項8に記載の電解コンデンサ。 - 前記多孔質粒子は、金属酸化物で形成されている、請求項8または9に記載の電解コンデンサ。
- 前記外装樹脂層は、前記多孔質粒子および前記フィラーの合計100質量部に対して、前記多孔質粒子を20質量部以上80質量部以下含む、請求項9に記載の電解コンデンサ。
- 前記コンデンサ素子は、固体電解質を備え、
前記固体電解質は、導電性高分子を含む、請求項1〜11のいずれか1項に記載の電解コンデンサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017016300 | 2017-01-31 | ||
JP2017016300 | 2017-01-31 | ||
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