JPWO2017099054A1 - 液晶表示素子 - Google Patents
液晶表示素子 Download PDFInfo
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- JPWO2017099054A1 JPWO2017099054A1 JP2017534854A JP2017534854A JPWO2017099054A1 JP WO2017099054 A1 JPWO2017099054 A1 JP WO2017099054A1 JP 2017534854 A JP2017534854 A JP 2017534854A JP 2017534854 A JP2017534854 A JP 2017534854A JP WO2017099054 A1 JPWO2017099054 A1 JP WO2017099054A1
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 228
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 150000001875 compounds Chemical class 0.000 claims abstract description 50
- 239000000203 mixture Substances 0.000 claims abstract description 48
- 230000005684 electric field Effects 0.000 claims description 13
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- 239000010408 film Substances 0.000 description 31
- 239000010409 thin film Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 24
- 230000001747 exhibiting effect Effects 0.000 description 21
- 230000008859 change Effects 0.000 description 20
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- 238000000034 method Methods 0.000 description 15
- 230000010287 polarization Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 11
- 239000011241 protective layer Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- RGOVYLWUIBMPGK-UHFFFAOYSA-N nonivamide Chemical compound CCCCCCCCC(=O)NCC1=CC=C(O)C(OC)=C1 RGOVYLWUIBMPGK-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000000284 resting effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000016776 visual perception Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
Description
換言すると、当該表示処理部は、前記画素電極への画像信号のフレーム周波数を60Hz以下0.1Hz以上の範囲に制御し、前記画像信号のフレーム周波数を延縮自在にする。
(通常駆動と間欠駆動との切り替え)
通常駆動(第1の駆動モード)の画素電極への画像信号のフレーム周波数が、例えば50Hzの場合は、全画面を(1/50)秒かけて走査するため、画素電極への画像信号の書き換えは0.02秒ごとに1回行っている(画像信号の書き換え周期は1/50)。この1/50秒をかけた書き換え動作の後、例えば、2フレーム、10フレームまたは100フレーム相当のドライバまたは表示処理部が動作しない休止期間を設けて、画素電極への画像信号の書き換えを再開すると、最後に画素電極への画像信号の書き換えたときから画素電極への画像信号の書き換えを再開するまでの間の画素電極への画像信号の書き換え期間(第2の駆動モード)の周期は、1/50秒より長くなる。
図11(A)は、2m行2n列の画素電極における画像信号の書き換えの経時的変化を表す図である。また、図11(B)は、2m+1行2n+1列の画素電極における画像信号の書き換えの経時的変化を表す図である。さらに、図11の例を、第1の駆動モード(通常駆動)の画素電極への画像信号のフレーム周波数を60Hzとした場合について説明する。
(通常駆動と低周波駆動との切り替え)
通常駆動(第1の駆動モード)の画素電極への画像信号のフレーム周波数が、例えば50Hzの場合は、全画面を(1/50)秒かけて走査するため、画素電極への画像信号の書き換えは0.02秒ごとに1回行っている(画像信号の書き換え周期)。この状態から、第1の駆動モードより低いフレーム周波数で画素への画像信号の書き換えを行う第3の駆動モードへ切り替えた場合、すなわち、例えば、画像信号のフレーム周波数が1Hzの低周波駆動状態へ切り替えると、全画面を(1/1)秒かけて走査するため、画素への画像信号の書き換えは1秒ごとに1回行う(画像信号の書き換え周期は1/1)ため、回路の消費電力を低減することができる。また、低周波駆動状態(第3の駆動モード)から通常駆動(第1の駆動モード)へ切り替えると、前述の画素への画像信号の書き換えは0.02秒ごとに1回行う状態に戻る。
尚、当該グラフの算出方法は以下の通りである。
2 第1の基板
3 電極層(第1の電極)
3’ 共通電極(第2の電極)
4 配向膜
5 液晶層
6 カラーフィルタ
7 第2の基板
11 ゲート電極
12 ゲート絶縁膜
13 半導体層
14 絶縁層
15 オーミック接触層
16 ドレイン電極
17 ソース電極
18 絶縁保護層
19b ソース電極
21 画素電極
22 共通電極
23 ストレイジキャパシタ
24 ドレイン電極
25 ソースバスライン
26 ゲートバスライン
27 ソース電極
28 ゲート電極
29 共通ライン
Claims (6)
- 第1の透明基板と、
前記第1の透明基板と対向配置された第2の透明基板と、
前記第1の透明基板と第2の透明基板との間に設けられた液晶組成物を含有する液晶層と、前記第1の透明基板上に配置される画素電極と、
前記画素電極への画像信号のフレーム周波数を60Hz以下0.1Hz以上の範囲に制御し、前記画像信号のフレーム周波数を延縮自在にする表示処理部と、を有し、
前記液晶組成物中のポーラー化合物から構成されるポーラー成分のうち、ε⊥×Δnが1.7以下のポーラー化合物を80質量%以上含有することを特徴とする、液晶表示素子。 - 第1のフレーム周波数で駆動する第1の駆動モードと、
間欠駆動による休止期間が設けられた第2の駆動モードと、を有し、前記第1の駆動モードと第2の駆動モードとを前記表示処理部で切り替える、請求項1に記載の液晶表示素子。 - 第1のフレーム周波数で駆動する第1の駆動モードと、
前記第1のフレーム周波数より低い第3のフレーム周波数で駆動する第3の駆動モードと、を有し、前記第1の駆動モードと第3の駆動モードとを前記表示処理部で切り替える、請求項1または2に記載の液晶表示素子。 - 前記液晶層と、前記第1の透明基板と前記第2の透明基板のそれぞれの間にホモジニアス配向を誘起する配向膜層を有し、前記第1の透明基板上に共通電極が配置されることを特徴とする、請求項1〜3のいずれか1項に記載の液晶表示素子。
- 前記画素電極と共通電極との間の電極間距離:Rが前記第1の透明基板と第2の透明基板との距離:Gより小さく、前記画素電極と共通電極との電極間にフリンジ電界を形成することを特徴とする、請求項1〜4のいずれか1項に記載の液晶表示素子。
- 前記液晶層と、前記第1の透明基板と前記第2の透明基板のそれぞれの間に配向膜層を有し、前記第2の透明基板上に共通電極が配置されることを特徴とする、請求項1に記載の液晶表示素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015239365 | 2015-12-08 | ||
JP2015239365 | 2015-12-08 | ||
PCT/JP2016/086164 WO2017099054A1 (ja) | 2015-12-08 | 2016-12-06 | 液晶表示素子 |
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JP6197983B1 JP6197983B1 (ja) | 2017-09-20 |
JPWO2017099054A1 true JPWO2017099054A1 (ja) | 2017-12-07 |
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JP2017534854A Active JP6197983B1 (ja) | 2015-12-08 | 2016-12-06 | 液晶表示素子 |
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JP (1) | JP6197983B1 (ja) |
WO (1) | WO2017099054A1 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009081989A1 (ja) * | 2007-12-26 | 2009-07-02 | Asahi Glass Co., Ltd. | 投射型表示装置 |
US9612490B2 (en) * | 2012-12-28 | 2017-04-04 | Sharp Kabushiki Kaisha | Liquid crystal display |
JP6334114B2 (ja) * | 2013-09-05 | 2018-05-30 | 株式会社ジャパンディスプレイ | 表示装置 |
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2016
- 2016-12-06 WO PCT/JP2016/086164 patent/WO2017099054A1/ja active Application Filing
- 2016-12-06 JP JP2017534854A patent/JP6197983B1/ja active Active
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