JPWO2017094874A1 - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Abstract

  The present invention provides a semiconductor device and a method for manufacturing a semiconductor device that can suppress the manufacturing cost and have a high yield. In the semiconductor device of the present invention, the first base body 11 and the second base body 12 are arranged with a space therebetween, and the first electrode 21c and the second electrode 22c are provided at positions facing each other. The conductor film 13 has a sheet-like base material 23 made of an insulator, and a plurality of connection pillars 24 made of columnar conductors having a nano-size diameter. The base material 23 is arrange | positioned so that the space | interval between each connection pillar 24 arrange | positioned at intervals may be filled. Each connecting column 24 is provided so that both end portions 24 a protrude from both surfaces of the base material 23. The conductor film 13 is disposed between the first base body 11 and the second base body 12, and both end portions 24a of the connection pillars 24 are respectively first so as to electrically connect the first electrode 21c and the second electrode 22c. It is joined to the electrode 21c and the second electrode 22c.

Description

  The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

  Conventionally, in a standard three-dimensional semiconductor device in which chips are stacked, a Cu / Sn bump and an adhesive underfill (liquid curable resin) are present when bonding a wafer and a wafer or between a wafer and a chip. It is used. However, in this three-dimensional chip stacking technology, when the chip thickness is reduced, local stress is induced due to CTE (thermal expansion coefficient) mismatch between the Si of the chip, the bump, and the adhesive layer, and the reliability decreases. There was a problem of doing.

  Further, in recent three-dimensional semiconductor devices, a connection density of tens of millions or more per die is required, and in order to meet this requirement, it is necessary to reduce the size of the bump to about 1 to 2 μm in diameter. . However, Cu / Sn bumps by current electroplating have a problem that it is difficult to reduce the size to 5 μm or less.

  Therefore, as a technique for solving such a problem of Cu / Sn bumps, the respective bonding surfaces when bonding the wafer and the wafer or the wafer and the chip are mirror-finished by CMP (chemical mechanical polishing) and bonded. A so-called hybrid bonding has been developed (for example, see Non-Patent Document 1).

R. Taibi, et al., “Full characterization of Cu / Cu direct bonding for 3D integration”, Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th, 2010, p.219-225

Japanese Patent No. 5693637

  In the bonding method described in Non-Patent Document 1, Cu for electrical connection or Si of an insulator is exposed on a bonding surface of a wafer or a chip. When performing CMP, dishing or the like is performed on the bonding surface. Therefore, it is necessary to precisely control the flatness of the joint surface so that the unevenness is not formed, resulting in an increase in manufacturing cost. In addition, in order to ensure electrical connection at the joint, it is necessary to strictly control so that particles and the like do not enter between the joint surfaces at the time of joining, and there is still a problem that the manufacturing cost increases. When the manufacturing cost related to these controls is lowered, there is a problem that the yield is drastically reduced because the number of portions where electrical connection cannot be secured at the joint increases.

  The present invention has been made paying attention to such problems, and an object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device that can suppress the manufacturing cost and have a high yield.

In order to achieve the above object, the present inventors have micropore through-holes developed at a density of 10 million pieces / mm ² or more developed for use as inspection connectors for electronic components such as semiconductor elements. The present invention has been achieved by paying attention to a microstructure (see, for example, Patent Document 1) composed of an anisotropic conductive member having a film-like base material and a metal filling the through micropores.

  That is, a semiconductor device according to the present invention includes a first base and a second base that are spaced apart from each other, a first electrode provided on a surface of the first base that faces the second base, A second electrode provided on a surface of the second base facing the first base so as to face the first electrode, and a columnar conductor having a nano-size diameter, the first electrode and the second electrode And a plurality of connections with both ends joined to the first electrode and the second electrode, respectively, so as to electrically connect the first electrode and the second electrode. And a pillar.

  The semiconductor device according to the present invention electrically connects the first electrode and the second electrode by joining both end portions of a plurality of connecting columns made of columnar conductors to the first electrode and the second electrode, respectively. be able to. As described above, since the first base and the second base are not bonded to each other, the flatness of the opposing surfaces of the first base and the second base needs to be controlled more precisely as the surfaces are bonded to each other. Absent. In addition, even if particles or the like enter between the opposing surfaces of the first base and the second base, the electrical connection between the first electrode and the second electrode is made by the connection column at a position deviated from the particles or the like. Therefore, it is not necessary to strictly control the penetration of particles and the like as in the case of joining the surfaces. As described above, the semiconductor device according to the present invention can suppress the manufacturing cost related to the control. Further, as compared with the case where the surfaces are joined to each other, electrical connection can be easily ensured, and the yield can be increased.

  In the semiconductor device according to the present invention, since the first electrode and the second electrode are joined by a plurality of connecting columns, even if the position of the second electrode is slightly deviated from the first electrode, Connection can be secured. In the semiconductor device according to the present invention, the first base and the second base are each composed of a wafer, a chip, etc., for example, are composed of a wafer or a chip having a through electrode made of copper as the first electrode and the second electrode. . Each connecting column has a cross-sectional area sufficiently smaller than the surface areas of the first electrode and the second electrode exposed on the surfaces of the first base and the second base, respectively, so that a large number are joined to the first electrode and the second electrode. It is preferable that they are arranged at small intervals. Each connecting column preferably has a diameter of 200 nm or less, and more preferably has a diameter of 100 nm or less.

  In the semiconductor device according to the present invention, each connection column is made of the same material as the first electrode and the second electrode, and both end portions are recrystallized to join the first electrode and the second electrode, respectively. May be. Each connecting column is made of a material different from that of the first electrode and the second electrode, and both end portions are alloyed with the material of the first electrode and the second electrode, respectively, so that the first electrode and the second electrode are respectively formed. It may be joined to two electrodes. When made of different materials, for example, each connecting column is made of copper, and the first electrode and the second electrode are made of an aluminum electrode or a copper electrode having a thin metal cap layer made of a nickel / tin thin film. In these cases, the first electrode and the second electrode can be integrated with each connection column, and electrical connection can be made more reliably. The both ends of each connecting column are efficiently brought into contact with the first electrode and the second electrode, respectively, and then heated at a predetermined temperature and / or by applying a predetermined pressure. It can be recrystallized or alloyed. Since the diameter of each connecting column is nano-sized, it can be recrystallized or alloyed at a lower temperature and / or pressure than when a thicker one is used.

  The semiconductor device according to the present invention preferably has an insulating member provided to cover at least the side surface of each connection column. In this case, each connecting column can be insulated by the insulating member, and the first electrode is electrically connected to an electrode other than the second electrode, or the second electrode is electrically connected to an electrode other than the first electrode. It is possible to prevent connection. Moreover, since each connection pillar can be supported by an insulating member when joining the both ends of each connection pillar to a 1st electrode and a 2nd electrode, respectively, it can join easily.

  A semiconductor device according to the present invention includes a first base and a second base that are spaced apart from each other, a first electrode provided on a surface of the first base that faces the second base, and the first base. A plurality of second electrodes provided on a surface of the second substrate facing the first substrate, a sheet-like base material made of an insulator, and a columnar conductor having a nano-size diameter. And the base material is arranged so as to fill the space between the connection pillars arranged in parallel with a space between each other, and both end portions of each connection pillar are provided so as to protrude from both surfaces of the base material, respectively. Each of the connecting pillars is disposed between the first base and the second base and electrically connects the first electrode and the second electrode. Connecting pillars located between the first electrode and the second electrode Both end portions may be respectively bonded to the first electrode and the second electrode.

  When it has this conductor film, it can manufacture easily by putting a conductor film between a 1st base | substrate and a 2nd base | substrate. Each connecting column is preferably provided perpendicular to the surface of the substrate of the conductor film. The conductor film is made of a fine structure described in Patent Document 1, for example. The base material should just be an insulator, for example, consists of alumina, organic substance, etc.

  In the case of having a conductor film, the semiconductor device according to the present invention has a first filling layer, and the first electrode is provided to protrude from a surface of the first base facing the second base, and The first filling layer may be provided so as to fill a space between the portion of the first substrate facing the second substrate other than the first electrode and the conductor film. In this case, the gap between the first base and the conductor film can be closed with the first filling layer. The second filling layer has a second electrode, the second electrode protruding from a surface of the second substrate facing the first substrate, and the second filling layer is formed on the first substrate of the second substrate. You may provide so that the part other than the said 2nd electrode among the surfaces facing a base | substrate and the said conductor film may be filled. In this case, the gap between the second base and the conductor film can be closed with the second filling layer. The first filling layer and the second filling layer are preferably made of an insulator.

  Further, when the conductive film is provided, when the portion other than the first electrode of the first base is made of a material that can be inserted through the end of each connecting pillar, the surface of the first electrode and the second base of the first base It is preferable that the surface of the portion other than the first electrode is flat with respect to the surface facing the surface. In this case, the conductor film can be disposed in a state where the end of each connecting column is inserted into the first base at a portion other than the first electrode. In addition, when the portion other than the first electrode of the first base is made of a material that cannot be inserted by the end of each connecting column, the first electrode is provided so as to protrude from the surface of the first base facing the second base. It is preferable. In this case, the conductor film can be disposed in a state where the end of each connecting column is separated from the first base at a portion other than the first electrode. The gap between the first base and the conductor film may be closed with the first filling layer.

  Further, when the conductive film is provided, when the portion other than the second electrode of the second base is made of a material that can be inserted through the end of each connecting column, the surface of the second base and the first base of the second base It is preferable that the surface of the portion other than the second electrode in the surface facing the surface is flat. In this case, a conductor film can be arrange | positioned in the state which made the edge part of each connection pillar penetrate the 2nd base | substrate in parts other than a 2nd electrode. In addition, when the portion other than the second electrode of the second base is made of a material that cannot be inserted by the end of each connecting column, the second electrode is provided so as to protrude from the surface of the second base facing the first base. It is preferable. In this case, the conductor film can be disposed in a state where the end of each connecting column is separated from the second base at a portion other than the second electrode. The gap between the second substrate and the conductor film may be closed with the second filling layer.

  Moreover, when it has a conductor film, the said conductor film has one or more of the connection pillars which do not electrically connect the said 1st electrode and the said 2nd electrode among each connection pillar from the said base material. You may have the cavity formed by removing. In this case, since the connecting pillar that does not electrically connect the first electrode and the second electrode is not necessarily required, the conductor film is not attached to the first substrate or the second substrate even if it is previously removed from the conductor film. After placement on the surface, it may be removed. By providing the cavity, the insulating property of the conductor film can be increased or the capacitance can be lowered. In addition, since the effect that a heat dissipation characteristic will improve will be acquired if the connection pillar which has not electrically connected the 1st electrode and the 2nd electrode is left, this effect and the effect at the time of making it into a cavity are considered. Then, it can be decided whether to remove the connecting pillar. The cavity formed after removal of the connecting pillar may be left as it is or may be filled with another substance such as an insulator.

  In the semiconductor device according to the present invention, the first electrode has a plurality of diameters of 0.5 to 5 μm and a pitch of 1 to 8 μm, and the second electrode has a plurality of diameters of 0.5 to 5 μm, It is preferable that the pitch is 1 to 8 μm. In this case, a connection density of 1 million to several tens of millions per die can be realized, and miniaturization can be promoted.

  In the semiconductor device according to the present invention, a set of the first electrode and the second electrode that are electrically connected to each other between one first base and one second base has 1,000,000 to 500. The number is preferably 10,000. In this case, the connection density per die is high and miniaturization can be promoted. Moreover, it is preferable that the connection rate of the said 1st electrode and the said 2nd electrode is 90% or more. In this case, reliability can be improved.

  Further, a semiconductor device according to the present invention includes a sheet comprising a plurality of bases spaced apart from each other, a plurality of pairs of electrodes provided on opposite surfaces of each base so as to face each other, and an insulator. And a plurality of connecting columns made of columnar conductors having a diameter of nano-size, and the substrates are arranged so as to fill between the connecting columns arranged parallel to each other at intervals. A conductive film provided so that both end portions of the connecting pillar protrude from both surfaces of the base material, and the conductive film is disposed between the bases and electrically connects the electrodes facing each other. As described above, both end portions of the connection columns located between the electrodes facing each other among the connection columns may be joined to the corresponding electrodes. In this case, even when there are not only two substrates but three or more substrates, the electrodes facing each other can be electrically connected by a plurality of connecting columns.

  In the case of having a conductor film, the conductor film is preferably thin in consideration of electric resistance, capacitance and the like. Therefore, the thickness of the substrate is preferably 100 μm or less, and more preferably 70 μm to 20 μm. Moreover, after arrange | positioning a conductor film on the surface of a 1st base | substrate or a 2nd base | substrate, the surface of a conductor film may be shaved, and it may be 10 micrometers or less, and also 2-3 micrometers or less.

  The method for manufacturing a semiconductor device according to the present invention has a sheet-like base material made of an insulator and a plurality of connection pillars made of columnar conductors having a nano-size diameter, and are arranged in parallel with a space between each other. The above-mentioned base material is arranged so as to fill the space between each connection pillar, and both ends of each connection pillar are conductor films provided so as to protrude from both surfaces of the above-mentioned base material, and the first base body having the first electrode on the surface A second substrate covering the surface and having a second electrode on the surface is placed on the conductor film so that the second electrode faces the first electrode, and the first electrode and the second electrode are Both ends of the connection column located between the first electrode and the second electrode among the connection columns are joined to the first electrode and the second electrode, respectively, so as to be electrically connected. And

  The semiconductor device manufacturing method according to the present invention can suitably manufacture the semiconductor device according to the present invention having a conductor film. In the semiconductor device manufacturing method according to the present invention, since the first base and the second base are not joined to each other, the flatness of the opposing surfaces of the first base and the second base is joined to each other. There is no need to control as precisely. In addition, even if particles or the like enter between the opposing surfaces of the first base and the second base, the electrical connection between the first electrode and the second electrode is made by the connection column at a position deviated from the particles or the like. Therefore, it is not necessary to strictly control the penetration of particles and the like as in the case of joining the surfaces. Thus, the manufacturing method of the semiconductor device according to the present invention can suppress the manufacturing cost related to the control. Further, as compared with the case where the surfaces are joined to each other, electrical connection can be easily ensured, and the yield can be increased.

  In the method of manufacturing a semiconductor device according to the present invention, the first electrode and the second electrode are joined by a plurality of connecting pillars. Therefore, even if the position of the second electrode is relatively deviated relative to the first electrode, Secure connection.

  In the method for manufacturing a semiconductor device according to the present invention, the first electrode is provided so as to protrude from a portion of the surface of the first base other than the first electrode, and the first of the surfaces of the first base is the first. After providing the first filling layer having the same thickness as the protruding height of the first electrode in a portion other than one electrode, the first electrode and the first filling layer may be covered with the conductor film. The second electrode is provided so as to protrude from a portion of the surface of the second base other than the second electrode, and the second base of the surface of the second base other than the second electrode is provided with the second electrode. The second filling layer is provided with the second filling layer so as to cover the second electrode and the second filling layer with the conductor film after providing the second filling layer having the same thickness as the protruding height of the two electrodes. A substrate may be placed on the conductor film. In these cases, it is possible to prevent the first filling layer from forming a gap between the first base and the conductor film and the second filling layer from forming a gap between the second base and the conductor film.

  In the method for manufacturing a semiconductor device according to the present invention, both ends of each connecting column are joined to the first electrode and the second electrode, respectively, by heating at a predetermined temperature and / or applying a predetermined pressure. It is preferable. In this case, when each connecting column is made of the same material as the first electrode and the second electrode, both ends of each connecting column can be recrystallized, and each connecting column is different from the first electrode and the second electrode. When it consists of, the both ends of each connection pillar can be alloyed with the raw material of a 1st electrode and a 2nd electrode, respectively. Thereby, a 1st electrode, a 2nd electrode, and each connection pillar can be integrated, and it can connect more reliably electrically. In addition, since the diameter of each connecting column is nano-sized, it can be recrystallized or alloyed at a lower temperature and / or pressure than when a thicker one is used.

  In the method for manufacturing a semiconductor device according to the present invention, after covering the surface of the first base with the conductor film, one or more of the connection columns at positions not bonded to the first electrode among the connection columns are provided. You may remove from the said base material. In this case, the connection pillar at a position not joined to the first electrode is not necessarily required and may be removed, thereby improving the insulation of the conductor film or reducing the capacitance. The cavity formed after the removal may be filled with another substance such as an insulator.

  In the method of manufacturing a semiconductor device according to the present invention, after covering the surface of the first substrate with the conductor film, the surface of the conductor film opposite to the first substrate is scraped to thin the conductor film. May be. In this case, the electrical resistance and the capacitance due to each connecting column can be reduced.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing cost can be suppressed and the manufacturing method of a semiconductor device with a high yield can be provided.

It is sectional drawing which shows the semiconductor device of embodiment of this invention. (A) Sectional drawing which shows the coupling | bonding state of a conductor film and a 1st base | substrate when a space is made between the base material of a conductor film and an IMD layer of the semiconductor device of embodiment of this invention, (b) Conductor It is a scanning electron microscope (SEM) photograph which shows the expanded cross section of the coupling | bond part vicinity of a film and a 1st base | substrate ((a) is upside down.). It is sectional drawing which shows the coupling | bonding state of a conductor film and a 1st base | substrate at the time of providing the filling layer between the base material of a conductor film, and the IMD layer of the semiconductor device of embodiment of this invention. It is sectional drawing which shows the manufacturing method of the semiconductor device of embodiment of this invention. It is sectional drawing which shows the modification which has a cavity in the conductor film of the semiconductor device of embodiment of this invention. It is sectional drawing which shows (a) the modification which shaved the conductor film of the semiconductor device of embodiment of this invention thinly, (b) and the modification which has a cavity in a conductor film further. It is sectional drawing which shows the (a) modification of 3 layers which laminated | stacked two chips | tips on the wafer of the semiconductor device of embodiment of this invention, and (b) the modification of 3 layers which laminated | stacked three wafers. (A) Modified example using Si through electrode, (b) Cross section showing modified example using redistribution wiring when semiconductor device of embodiment of the present invention is combined with two-layer structure and three-layer structure FIG. (A) Cross section of semiconductor device of embodiment of the present invention (b) Scanning electron showing enlarged cross section of joint portion between TEG module and conductor film, (c) Enlarged cross section of joint portion between conductor film and interposer wafer It is a microscope (SEM) photograph. It is a transmission electron microscope (TEM) photograph which shows the cross section of the coupling | bond part of (a) TEG module and a conductor film of the semiconductor device of embodiment of this invention, (b) The expanded cross section of the coupling | bond part.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1 to 10 show a semiconductor device and a method for manufacturing the semiconductor device according to the embodiment of the present invention.
As shown in FIG. 1, the semiconductor device 10 includes a first base 11, a second base 12, and a conductor film 13.

The first base body 11 and the second base body 12 are made of wafers or chips, and are each formed of base portions 21a and 22a made of Si, and IMD (Inter-) made of an insulator such as SiO ₂ provided on the surfaces of the base portions 21a and 22a. Metal Dielectric (inter-metal insulation) layers 21b and 22b and a plurality of first electrodes 21c and second electrodes 22c made of copper (Cu). Each first electrode 21 c is provided so as to be exposed from the inside of the IMD layer 21 b of the first base 11 to the surface. The first electrodes 21c are connected to each other by a copper wire (Cu Wire) 21d inside the IMD layer 21b. Each second electrode 22c is provided so as to be exposed from the inside of the IMD layer 22b of the second base 12 to the surface. The second electrodes 22c are connected to each other by a copper wire (Cu Wire) 22d inside the IMD layer 22b. The first base body 11 and the second base body 12 are spaced from each other so that the first electrode 21c and the second electrode 22c exposed on the surface face each other.

  The first base 11 and the second base 12 have elements such as MOS-FETs (Metal-Oxide-Semiconductor-Field-Effect Transistors) arranged on the bases 21a and 22a, and ILD (Inter Level Dielectric) on the elements. An ILD layer 21b, 22b, a first electrode 21c, and a second electrode 22c may be formed by forming an interlayer insulating film) and a 1-layer-multi-level metallization (1st-level-multi-level metallization), respectively. Good. The metal thin film is electrically connected to an electrode of an element such as a MOS-FET.

  The conductor film 13 has a sheet-like base material 23 made of an insulator, and a plurality of connecting pillars 24 made of columnar conductors having a nano-size diameter. The base material 23 is made of aluminum (AAO) on which an anodized film is formed, and each connection column 24 is made of copper (Cu). In the conductive film 13, the connection pillars 24 are provided in parallel through the thickness of the base material 23 and spaced apart from each other, and the base material 23 is disposed so as to fill the space between the connection pillars 24. The conductor film 13 is provided such that each connection column 24 is perpendicular to the surface of the base material 23, and both end portions of each connection column 24 protrude from both surfaces of the base material 23.

  In the specific example shown in FIG. 1, each first electrode 21c and each second electrode 22c have an exposed surface diameter of 1 μm or less and a pitch of 2 μm or less. Moreover, the base material 23 is 20 micrometers or less in thickness. Each connecting column 24 has a diameter of 60 nm and a pitch of 100 nm so that a large number are joined to the first electrode 21c and the second electrode 22c. Each connecting column 24 has a maximum protruding amount of about 1 μm at both ends from the surface of the substrate 23.

  The conductor film 13 is disposed between the first base body 11 and the second base body 12, and the first electrode 21c and the second electrode are connected to the first electrode 21c and the second electrode 22c so as to electrically connect the first electrode 21c and the second electrode 22c. Both ends of the connecting column 24 positioned between the two electrodes 22c are joined to the first electrode 21c and the second electrode 22c, respectively. In a specific example shown in FIG. 1, each end of each connection pillar 24 made of copper is brought into contact with the first electrode 21 c and the second electrode 22 c made of copper, and then heated to around 300 ° C. Both ends of the column 24 are recrystallized and joined to the first electrode 21c and the second electrode 22c, respectively. In addition, when each connection column 24 and the 1st electrode 21c and the 2nd electrode 22c consist of a different material, both ends of each connection column 24 are alloyed with the material of the 1st electrode 21c and the 2nd electrode 22c, respectively. These are joined to the first electrode 21c and the second electrode 22c, respectively.

  For example, when each connecting column 24 is made of copper and the first electrode 21c and the second electrode 22c are made of aluminum, they are joined by an AlCu alloy. Further, when each connecting column 24 is made of copper and the first electrode 21c and the second electrode 22c are copper electrodes having a thin metal cap layer made of a nickel / tin thin film, they are joined by forming a CuSn alloy. Also, when each connecting column 24 is made of copper and the first electrode 21c and the second electrode 22c are aluminum electrodes having a thin metal cap layer made of a nickel / tin thin film, they are joined by CuSn alloy. In this way, when the first electrode 21c and the second electrode 22c are electrodes having a thin metal cap layer made of a material different from that of each connection column 24, the material of each connection column 24 and the material of the metal cap layer. Join and become an alloy.

  In the semiconductor device 10, when the IMD layer 21b and the IMD layer 22b are made of a material that can be inserted through the end of each connection column 24, the surface of the first electrode 21c, the surface of the IMD layer 21b, and It is preferable that the surface of the second electrode 22c and the surface of the IMD layer 22b are flat. In this case, the conductor film 13 can be disposed in a state where both end portions of each connection pillar 24 are inserted into the IMD layer 21b and the IMD layer 22b, respectively. Thereby, the bond strength between the conductor film 13 and the first and second bases 11 and 12 can be increased.

  When the IMD layer 21b and the IMD layer 22b are made of a material that cannot be inserted by the end portions of the connection columns 24, as shown in FIGS. 2A and 2B, the first electrode 21c is the first base. 11 is protruded from the surface of the IMD layer 21b, and the second electrode 22c is preferably provided to protrude from the surface of the IMD layer 22b of the second substrate 12. In this case, the conductor film 13 can be disposed in a state in which both end portions 24a of each connection pillar 24 are separated from the IMD layer 21b and the IMD layer 22b, respectively. However, in this case, since a space is formed between the base material 23 of the conductor film 13 and each of the IMD layers 21b and 22b, the bonding strength between the conductor film 13, the first base body 11, and the second base body 12 is weakened. .

  Therefore, in order to increase the bonding strength, as shown in FIG. 3, a filling layer 25 is provided so as to fill the space between the base material 23 of the conductor film 13 and the surface of each IMD layer 21b, 22b, and each IMD layer 21b, It is preferable that the end 24 a of each connecting column 24 facing 22 b is inserted into the filling layer 25. The filling layer 25 is preferably made of an insulator. The filling layer 25 may be provided in advance before the conductor film 13 is attached to the surfaces of the first base body 11 and the second base body 12, respectively. The conductor film 13 is provided on the first base body 11 and the second base body 12, respectively. It may be provided to fill the space after being attached to the surface. When the filling layer 25 is provided in advance, it is preferable that the filling layer 25 is made of a material having a hardness capable of inserting each connecting column 24. 2 and 3 show a coupling state between the conductor film 13 and the first base 11.

Next, the operation will be described.
The semiconductor device 10 electrically connects the first electrode 21c and the second electrode 22c by joining both end portions 24a of the plurality of connection columns 24 made of columnar conductors to the first electrode 21c and the second electrode 22c, respectively. Can be connected to. Since the semiconductor device 10 does not join the first base body 11 and the second base body 12 with each other, the flatness of the opposing surfaces of the first base body 11 and the second base body 12 is as precise as when the surfaces are joined with each other. There is no need to control. Even if particles or the like enter between the opposing surfaces of the first substrate 11 and the second substrate 12, the first and second electrodes 21c and 22c are connected to each other by the connecting pillar 24 at a position away from the particles or the like. Therefore, it is not necessary to strictly control the penetration of particles and the like as in the case of joining the surfaces. Thus, the semiconductor device 10 can suppress the cost regarding control. Further, as compared with the case where the surfaces are joined to each other, electrical connection can be easily ensured, and the yield can be increased.

  In the semiconductor device 10, since the first electrode 21c and the second electrode 22c are joined by the plurality of connecting columns 24, even if the position of the second electrode 22c is relatively slightly shifted from the first electrode 21c, the electrical Secure connection. Moreover, since the semiconductor device 10 can integrate the 1st electrode 21c and the 2nd electrode 22c, and each connection pillar 24 by recrystallization or alloying, it can electrically connect more reliably. . Since the diameter of each connecting column is nano-sized, it can be recrystallized or alloyed at a lower temperature or pressure than when a thicker one is used.

  Moreover, even if the semiconductor device 10 is a case where a residue or a thin oxide layer remains on the surface of the first electrode 21c and the second electrode 22c, both end portions 24a of each connection pillar 24 of the conductor film 13 are The first electrode 21c and the second electrode 22c can be brought into contact with each other with a relatively low bonding pressure to be bonded. For this reason, electrical connection can be easily ensured.

  Since the semiconductor device 10 covers the side surfaces of the connection columns 24 with the base material 23 made of AAO as an insulator, the connection columns 24 can be insulated in the lateral direction. Therefore, it is possible to prevent the first electrode 21c from being electrically connected to an electrode other than the second electrode 22c, or the second electrode 22c from being electrically connected to an electrode other than the first electrode 21c. it can. Moreover, since each connection pillar 24 is supported by the base material 23, both ends 24a of each connection pillar 24 can be easily joined to the first electrode 21c and the second electrode 22c, respectively. Moreover, since the base material 23 consists of AAO, the conductor film 13 is excellent in heat conductivity compared with the conventional organic film | membrane and adhesive agent, and can make mechanical stress small.

  The semiconductor device 10 can be manufactured by the method for manufacturing a semiconductor device according to the embodiment of the present invention. In the method of manufacturing a semiconductor device according to the embodiment of the present invention, first, as shown in FIG. 4A, a wafer having a copper electrode (for example, a first electrode 21c) and an IMD layer (for example, an IMD layer 21b). For example, the surface of the first substrate 11 is planarized by CMP (chemical mechanical polishing) and post-cleaning. Next, as shown in FIG. 4B, when the copper electrode slightly protrudes from the surface of the IMD layer, the IMD layer is slightly depressed by damage-free plasma etch-back. I will. The depth is, for example, about 300 nm.

  Next, when the cap layer 26 is formed, as shown in FIG. 4D, for example, nickel / tin (100 nm / 200 nm) is formed on the surface of the copper electrode by electro-less plating. ) A thin cap layer 26 made of a thin film is formed. Tin (Sn) is used as a buffer layer to compensate for variations in the height and surface irregularities of the copper electrode introduced by the CMP process, and nickel (Ni) is used between the Cu layer and the Sn layer. Used as a barrier layer.

  Next, as shown in FIGS. 4E and 4F, a cap layer 26 is formed on the surface of the wafer from which the copper electrode in FIG. 4C is exposed or on the surface of the copper electrode in FIG. The surface of the wafer is covered with a conductor film 13, and a chip or other wafer is placed thereon. At this time, the copper electrode of the wafer under the conductor film 13 and the copper electrode (for example, the second electrode 22c) of the chip or wafer (for example, the second base 12) placed on the conductor film 13 are opposed to each other. Deploy. Then, it heats around 300 degreeC, the both ends 24a of each connection pillar 24 are recrystallized or alloyed, and it joins to the copper electrode of each chip | tip or a wafer, respectively. In addition, when mounting the chip | tip shown in FIG.4 (e), the conductor film 13 which protruded from the chip | tip is removed. 4 (e) and 4 (f), the filling layer 25 is provided between the surface of the base material 23 of the conductor film 13 and the surface of the IMD layer of the chip or wafer as necessary. Form. Thus, the semiconductor device 10 can be easily manufactured by using the conductor film 13.

  As shown in FIG. 5, in the semiconductor device 10, the conductor film 13 is one of the connection columns 24 that do not electrically connect the first electrode 21 c and the second electrode 22 c among the connection columns 24. One or more may have a cavity 31 formed by being removed from the substrate 23. In this case, in FIG. 4E and FIG. 4F, after covering the surface of the first substrate 11 (wafer) with the conductor film 13, the second substrate 12 (chip or wafer) is placed on the conductor film 13. Before mounting, one or more of the connection pillars 24 at positions not joined to the first electrode 21c (copper electrode) among the connection pillars 24 are removed from the base material 23, thereby forming the cavity 31. it can. Further, the connection pillar 24 may be removed from the conductor film 13 in advance to form the cavity 31.

  In the case shown in FIG. 5, by providing the cavity 31, the insulating property of the conductor film 13 can be increased, or the capacitance can be lowered. In addition, since the effect that a heat dissipation characteristic improves will be acquired if the connection pillar 24 which is not electrically connecting the 1st electrode 21c and the 2nd electrode 22c is left, this effect and when it is set as the cavity 31 are obtained. Considering the effect, it can be determined whether or not to remove the connecting pillar 24. The cavity 31 formed after the removal of the connection pillar 24 may be left as it is or may be filled with another substance such as an insulator.

  Further, as shown in FIG. 6A, the semiconductor device 10 is obtained by covering the surface of the first base 11 (wafer) with the conductive film 13 in FIGS. 4E and 4F, and then the conductive film. Before the second substrate 12 (chip or wafer) is placed on the substrate 13, the conductor film 13 may be thinned by scraping the surface of the conductor film 13 by CMP or the like. In this case, the thickness of the base material 23 of the conductor film 13 can be reduced to 2 to 3 μm or less. In addition, by reducing the thickness of the conductor film 13, it is possible to reduce the electrical resistance and the electrostatic capacity due to the connection columns 24. As shown in FIG. 6B, after the conductor film 13 is thinned, one or more of the connection columns 24 at positions that are not joined to the first electrode 21c among the connection columns 24, as in FIG. The cavity 31 may be formed by removing from the substrate 23.

  As shown in FIGS. 7A and 7B, the semiconductor device 10 may have a configuration in which a chip or a wafer is composed of three layers. In this case, for example, it can be manufactured as follows. First, in FIG. 4E and FIG. 4F, the second base 12 (chip or wafer) placed on the conductor film 13 (13a) is the surface opposite to the conductor film 13 (13a). The surface of the second substrate 12 where the third electrode 22e is exposed is covered with another conductor film 13b, and a third substrate 33 is further placed thereon. At this time, it arrange | positions so that the 3rd electrode 22e of the 2nd base | substrate 12 under the conductor film 13b and the 4th electrode 33a of the 3rd base | substrate 33 mounted on the conductor film 13b may mutually oppose. Then, it heats around 300 degreeC, the both ends 24a of each connection pillar 24 of each conductor film 13a, 13b is recrystallized, and it joins to the 3rd electrode 22e and the 4th electrode 33a, respectively.

  In this way, by disposing the conductive film 13 so that the electrodes facing each other are electrically connected by the plurality of connection columns 24 between the plurality of bases made of chips or wafers, only two bases are provided. Alternatively, three or more multilayer semiconductor devices 10 can be manufactured.

  Moreover, the semiconductor device 10 which combined 2 layer structure and 3 layer structure can also be comprised. For example, as shown in FIG. 8 (a), a part of the conductor film 13a placed on the first substrate 11 is cut into a concave shape, the second substrate 12 is disposed therein, and the second substrate 12 and the conductor film. An insulating film (Insulating film) 41 in which a plurality of bumps (Metal microbumps) 41a are arranged is provided on 13a, and the second base 12 is placed on the insulating film 41 via another conductor film 13b. The third substrate 33 may be provided, and the fourth substrate 34 may be provided on the insulating film 41 at a position shifted from the second substrate 12 via another conductor film 13c. In the case of FIG. 8A, the Si through electrode (TSV) 42 is exposed on the surface of the second base 12 on the side of the third base 33 to form the third electrode 22e. Each bump 41a includes a third electrode 22e of the second base 12 and a fourth electrode 33a of the third base 33, and a first electrode 21c of the first base 11 and a fifth electrode 34a of the fourth base 34. Are electrically connected. Further, an insulator 43 is sandwiched between the side surface of the second base 12 and the side surface of the concave portion of the conductor film 13a so as not to be electrically connected.

  In the example shown in FIG. 8A, the current from the MOS-FET of the first base 11 passes through the connection pillar 24 of the conductor film 13a and the second electrode 22c from the first electrode 21c and the MOS of the second base 12. -It flows to FET (arrow A in FIG. 8A). In addition, the current from the MOS-FET of the first base 11 passes through the first electrode 21c, the connection pillar 24 of the conductor film 13a, the bump 41a, the connection pillar 24 of the conductor film 13c, the fifth electrode 34a, and the fourth base 34. (The arrow B in FIG. 8A). Further, the current from the MOS-FET of the second substrate 12 flows from the Si through electrode 42 to the MOS-FET of the third substrate 33 through the third electrode 22e, the connection column 24 of the conductor film 13b, and the fourth electrode 33a. (C arrow in FIG. 8A).

  As shown in FIG. 8 (b), the redistribution line (Metal redistribution line) is not used in the vicinity of the surface of the first base 11 and the boundary of the second base 12 with the insulating film 41 without using the Si through electrode 42, respectively. ) 44a and 44b may be provided. In this case, the current from the MOS-FET of the second substrate 12 passes through the redistribution wiring 44a of the first substrate 11 from the connection column 24 of the conductor film 13a, and again from the other connection column 24 of the conductor film 13a. It flows to the MOS-FET of the third substrate 33 through the redistribution wiring 44b of 41, the connecting pillar 24 of the conductor film 13b, and the fourth electrode 33a (arrow C in FIG. 8B). As described above, in the example shown in FIG. 8B, not the arrow C in FIG. 8A but the arrow C in FIG. 8B, as in FIG. 8A. Current can flow.

  FIG. 9 shows a scanning electron microscope (SEM) photograph and FIG. 10 shows a transmission electron microscope (TEM) photograph of the semiconductor device 10 manufactured according to FIG. In this semiconductor device 10, a TEG (Test Element Group) module is mounted as the second substrate 12 on the interposer wafer as the first substrate 11 through the conductor film 13. The interposer wafer has a diameter of 300 mm. The TEG module is 7 mm × 23 mm cut out from a TEG wafer having a diameter of 300 mm. The interposer wafer and the TEG wafer have an ultra-high-density copper electrode and an IMD layer made of plasma TEOS (Tetraethyl orthosilicate), and were produced by a 3D-LSI (Large Scale Integration) production line for 300 mm wafers. The size and pitch of the copper electrodes are 3 μm and 6 μm, respectively. The electrode density per TEG die is 4.3 million (4,309,200).

  As shown in FIG. 9, it can be confirmed that the end 24a of the connection column 24 facing the copper electrode of the TEG module and the interposer wafer is joined to the copper electrode. Moreover, as shown in FIG. 10, it can confirm that the edge part 24a of the connection pillar 24 is recrystallized inside a copper electrode with the depth of about 500 nm. The conductor film 13 has a thickness of 80 μm. Note that FIG. 10B is an enlarged view of the vicinity of the coupling portion in FIG. 9B.

  Further, when the current-voltage characteristics were measured by connecting the electrodes of the TEG module of the manufactured semiconductor device 10 in a daisy chain, 3,898,000 electrodes were connected out of 4,309,200 electrodes. It was confirmed that This is a connection rate of 90% or more.

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 1st base | substrate 21a Base 21b IMD layer 21c 1st electrode 21d Copper wire 12 2nd base | substrate 22a Base 22b IMD layer 22c 2nd electrode 22d Copper wire 22e 3rd electrode 13 Conductive film 23 Base material 24 Connection pillar 24a End Part 25 Filling layer 26 Cap layer 31 Cavity 33 Third substrate 33a Fourth electrode 34 Fourth substrate 34a Fifth electrode 41 Insulating film 41a Bump 42 Si through electrode 43 Insulator 44a, 44b Redistribution wiring

Claims (18)

A first substrate and a second substrate spaced apart from each other;
A first electrode provided on a surface of the first substrate facing the second substrate;
A second electrode provided on a surface of the second base facing the first base so as to face the first electrode;
It is composed of a columnar conductor having a nano-size diameter, and is arranged with a space between the first electrode and the second electrode, and electrically connects the first electrode and the second electrode, A plurality of connecting columns each having both ends joined to the first electrode and the second electrode,
A semiconductor device comprising:   The semiconductor device according to claim 1, further comprising an insulating member provided to cover at least a side surface of each connecting column. A first substrate and a second substrate spaced apart from each other;
A first electrode provided on a surface of the first substrate facing the second substrate;
A second electrode provided on a surface of the second base facing the first base so as to face the first electrode;
The base material has a sheet-like base material made of an insulator and a plurality of connecting pillars made of columnar conductors having a nano-sized diameter, and fills the space between the connecting pillars arranged in parallel with a space between each other. Is disposed, and both end portions of each connection pillar each have a conductor film provided so as to protrude from both surfaces of the base material,
The conductive film is disposed between the first base and the second base, and the first electrode and the first of the connection columns are electrically connected to electrically connect the first electrode and the second electrode. A semiconductor device characterized in that both ends of a connecting pillar positioned between two electrodes are joined to the first electrode and the second electrode, respectively. Having a first packed bed,
The first electrode is provided so as to protrude from a surface of the first base facing the second base,
The first filling layer is provided so as to fill a space between the conductor film and a portion other than the first electrode in a surface of the first substrate facing the second substrate. Item 4. The semiconductor device according to Item 3. Having a second packed bed,
The second electrode is provided so as to protrude from a surface of the second base facing the first base,
The second filling layer is provided so as to fill a space between the conductor film and a portion other than the second electrode in a surface of the second substrate facing the first substrate. Item 5. The semiconductor device according to Item 3 or 4.   The conductor film has a cavity formed by removing one or more of the connection columns that do not electrically connect the first electrode and the second electrode among the connection columns from the base material. The semiconductor device according to claim 3, wherein the semiconductor device is provided.   The semiconductor device according to claim 3, wherein the conductor film has a thickness of the base material of 100 μm or less.   Each connection column is made of the same material as the first electrode and the second electrode, and both end portions are recrystallized and joined to the first electrode and the second electrode, respectively. 8. The semiconductor device according to any one of 1 to 7.   Each connecting column is made of a material different from that of the first electrode and the second electrode, and both end portions are alloyed with the material of the first electrode and the second electrode, respectively, so that the first electrode and the second electrode are respectively formed. The semiconductor device according to claim 1, wherein the semiconductor device is bonded to the semiconductor device. 10. The semiconductor device according to claim 9, wherein the first electrode and the second electrode are made of an aluminum electrode or a copper electrode having a thin metal cap layer made of a nickel / tin thin film. A plurality of substrates spaced from each other;
A plurality of pairs of electrodes provided on opposite surfaces of each base so as to face each other;
The base material has a sheet-like base material made of an insulator and a plurality of connecting pillars made of columnar conductors having a nano-sized diameter, and fills the space between the connecting pillars arranged in parallel with a space between each other. Is disposed, and both end portions of each connection pillar each have a conductor film provided so as to protrude from both surfaces of the base material,
The conductive film is disposed between the substrates, and both ends of the connecting columns located between the electrodes facing each other are connected to electrically connect the electrodes facing each other. A semiconductor device characterized in that the semiconductor device is bonded to an electrode.   The semiconductor device according to claim 1, wherein each connecting pillar has a diameter of 200 nm or less. The base material has a sheet-like base material made of an insulator and a plurality of connecting pillars made of columnar conductors having a nano-sized diameter, and fills the space between the connecting pillars arranged in parallel with a space between each other. Is disposed, and the both ends of each connecting pillar are covered with the conductor film provided so as to protrude from both surfaces of the base material, respectively, covering the surface of the first base body having the first electrode on the surface,
A second substrate having a second electrode on the surface is placed on the conductor film so that the second electrode faces the first electrode,
The both ends of the connection column located between the first electrode and the second electrode are connected to the first electrode so that the first electrode and the second electrode are electrically connected to each other. And a method of manufacturing a semiconductor device, wherein the semiconductor device is bonded to the second electrode. Providing the first electrode so as to protrude from a portion of the surface of the first base other than the first electrode;
After providing the first filling layer having the same thickness as the protruding height of the first electrode on the surface of the first substrate other than the first electrode,
The method of manufacturing a semiconductor device according to claim 13, wherein the conductor film covers the first electrode and the first filling layer. Providing the second electrode so as to protrude from a portion of the surface of the second base other than the second electrode;
After providing a second filling layer having the same thickness as the protruding height of the second electrode on the surface of the second substrate other than the second electrode,
The said 2nd base | substrate with which the said 2nd filling layer was provided is mounted on the said conductor film so that the said 2nd electrode and the said 2nd filling layer may be covered with the said conductor film. The manufacturing method of the semiconductor device of description.   16. The method according to any one of claims 13 to 15, wherein both ends of each connecting column are joined to the first electrode and the second electrode, respectively, by heating at a predetermined temperature and / or applying a predetermined pressure. A manufacturing method of a semiconductor device given in any 1 paragraph.   After covering the surface of the first base with the conductive film, one or more of the connection columns at positions not bonded to the first electrode among the connection columns are removed from the base material. The method for manufacturing a semiconductor device according to claim 13. 18. The method according to claim 13, wherein after covering the surface of the first substrate with the conductor film, the surface of the conductor film opposite to the first substrate is scraped to thin the conductor film. A manufacturing method of a semiconductor device given in any 1 paragraph.