JPWO2016208090A1 - 3D wiring board manufacturing method, 3D wiring board, 3D wiring board base material - Google Patents

Abstract

A preparation step of preparing a resin film (1) having a breaking elongation of 50% or more, a first metal film formation step of forming a first metal film (3) on the surface of the resin film, and the first metal film Patterning process for forming a desired pattern, three-dimensional molding process for subjecting the resin film to heating and pressurization and three-dimensional molding, and a second pattern on the patterned first metal film. A second metal film forming step of forming a metal film (21). In the first metal film forming step, the metal is deposited in particles to form the first metal film in a porous shape. .

Description

  The present invention relates to a method for manufacturing a three-dimensional wiring board molded three-dimensionally, a three-dimensional wiring board manufactured by the manufacturing method, and a base material for a three-dimensional wiring board used for the three-dimensional wiring board.

  As a conventionally known three-dimensional wiring board, there is a MID (Molded Interconnect Device) board which is a part in which an electric circuit is directly and three-dimensionally formed on the surface of a structure having a three-dimensional structure. As techniques relating to the MID substrate, methods such as a two-shot method, MIPTEC (Microscopic Integrated Processing Technology), and LDS (Laser Direct Structuring) are known. In any method, after a three-dimensional structure is formed on the mold resin, a wiring circuit is formed on the surface. For example, Patent Document 1 discloses a technique related to an MID substrate and its manufacture.

  In the two-shot method, secondary molding with a new resin is performed on a portion of the molded resin that is not molded on the primary molding, and a catalyst is applied and plated using the resin for the secondary molding as a resist. Thus, a wiring circuit is formed on the mold resin. However, since the shape of the wiring pattern is regulated by the secondary molded resin, the minimum L / S (line width and spacing) indicating the conductor width and the conductor gap from the limit of the mold processing accuracy for the secondary molding. The value was about 150/150 μm, and it was difficult to form a finer wiring pattern.

  In MIPTEC, the entire surface of a molded mold resin is metalized, and the metal (metalizing layer) at the outer edge portion of the wiring circuit is removed by laser light. Thereafter, a region to be a wiring circuit is energized to perform electroplating, and then the entire surface of the molded body is subjected to flash etching to remove metals other than the wiring circuit, thereby forming a wiring circuit on the mold resin. However, when using laser light, a special laser irradiation apparatus corresponding to the three-dimensional shape of the molded mold resin is required, and there is a problem of increase in manufacturing cost due to labor of laser processing and equipment investment. In addition, since the metal necessary for the wiring circuit is deposited by electrolytic plating, it is necessary to energize only the region that becomes the wiring circuit, so that the region that becomes the wiring circuit is electrically connected to the outer periphery of the molded body. Or have to be electrically connected to the outer periphery via a feeder line. That is, there is a problem that it is difficult to electrically separate the region to be the wiring circuit from the outer peripheral portion of the molded body (that is, formation of an independent wiring pattern), and formation of a feed line that is finally unnecessary as a circuit and The problem of increased cost associated with removal arises.

  In LDS, primary molding is performed using a special resin material containing conductive particles, the region that becomes the wiring circuit is irradiated with laser light to expose the conductive particles, and the exposed portions of the conductive particles are plated. As a result, a wiring circuit is formed on the mold resin. However, the minimum value of L / S is about 100/150 μm because of the problem of accuracy of exposing the conductive particles in the molded mold resin, and it is difficult to form a finer wiring pattern. In addition, a special laser irradiation device is required as in MIPTEC, and there is a problem of increased manufacturing costs due to labor of laser processing and capital investment.

  In any of the above methods, since the wiring circuit is formed in the mold resin having a three-dimensional shape, the finally manufactured MID substrate is a single-sided substrate. For this reason, the freedom degree of a wiring circuit becomes small compared with a double-sided board, and the problem that size reduction of board | substrate itself becomes difficult arises. As a method for solving the problem and the above-described problem, there is a method of manufacturing a three-dimensional wiring board by forming a wiring circuit on a thermoplastic resin such as polyimide and then bending the resin by heating and pressing. For example, Patent Document 2 discloses that a metal foil is pasted on a polyimide film by thermocompression bonding, and then three-dimensional molding is disclosed, and Patent Document 3 discloses that a three-dimensional molding is performed after applying a conductive paste on a polysulfone resin. It is disclosed.

JP 2012-94605 A Japanese Patent Laid-Open No. 06-188537 JP 2000-174399 A

  However, when a flat thermoplastic resin is bent and molded three-dimensionally by heating and pressurization, elongation occurs around the bent portion. At this time, many thermoplastic resins have a large elongation at break, and can be stretched relatively freely. However, the patterned metal grows to a certain limit, but if it is further stretched, an infinite number of wide cracks occur and break. For example, when a metal forming a wiring circuit is formed on a resin by a method such as Patent Document 2 and Patent Document 3 and then three-dimensional molding is performed, the wiring circuit easily breaks at a curved portion of the three-dimensional wiring board, and reliability is improved. It becomes difficult to manufacture an excellent three-dimensional wiring board. In particular, when a three-dimensional substrate having a complicated three-dimensional shape and a large amount of extension is molded, the disconnection of the wiring circuit is more likely to occur.

  The present invention has been made in view of such problems, and an object of the present invention is to achieve a three-dimensional structure that has excellent reliability by preventing the wiring circuit from being disconnected while miniaturizing the wiring circuit and reducing the cost. An object of the present invention is to provide a manufacturing method capable of manufacturing a wiring board. In addition, the present invention has been made in view of such a problem, and an object of the present invention is to achieve fine processing and cost reduction of the wiring circuit and to prevent disconnection of the wiring circuit and to have excellent reliability. An object of the present invention is to provide a three-dimensional wiring board on which one side or both sides of the wiring circuit is provided with a wiring property and a three-dimensional wiring board base material used therefor.

  In order to achieve the above object, a method of manufacturing a three-dimensional wiring board according to the present invention includes a preparation step of preparing a resin film having a breaking elongation of 50% or more, and a first metal film formed on the surface of the resin film. 1 metal film forming step, pattern forming step of patterning the first metal film by photolithography to form a desired pattern, and three-dimensional molding step of applying heat and pressure to the resin film to form a solid And a second metal film forming step of forming a second metal film on the patterned first metal film, wherein in the first metal film forming step, the metal is deposited in the form of particles and The first metal film is formed in a porous shape by adjusting the film thickness.

  In order to achieve the above object, a three-dimensional wiring board of the present invention is formed on a surface of a resin film having a three-dimensional shape and having a fracture elongation of 50% or more, and a desired pattern. A first metal film, and a second metal film formed on the first metal film, the first metal film having a porous structure in which metal is deposited in the form of particles. In other words, the film thickness is adjusted.

  Furthermore, in order to achieve the said objective, the base material for three-dimensional wiring boards of this invention is a 1st metal which is formed on the surface of the resin film provided with 50% or more fracture elongation, and the said resin film, and is provided with the desired pattern The first metal film has a film thickness adjusted to have a porous structure formed by depositing metal in the form of particles.

  According to the present invention, it is possible to provide a manufacturing method capable of manufacturing a three-dimensional wiring board having excellent reliability by preventing the wiring circuit from being disconnected while achieving fine processing and cost reduction of the wiring circuit. Further, according to the present invention, it is possible to achieve fine processing and cost reduction of a wiring circuit, and to provide a three-dimensional wiring board having excellent reliability in which disconnection of the wiring circuit is prevented, and a three-dimensional wiring board required for manufacturing the same. A substrate can be provided.

It is sectional drawing in the manufacturing process of the three-dimensional wiring board which concerns on the Example of this invention. It is sectional drawing in the manufacturing process of the three-dimensional wiring board which concerns on the Example of this invention. It is the schematic in metal film formation about the three-dimensional wiring board which concerns on the Example of this invention. It is sectional drawing in the manufacturing process of the three-dimensional wiring board which concerns on the Example of this invention. It is an expansion conceptual diagram of the broken-line area | region V in FIG. It is the schematic in metal film formation about the three-dimensional wiring board which concerns on the Example of this invention. It is the schematic in metal film formation about the three-dimensional wiring board which concerns on the Example of this invention. It is the schematic in metal film formation about the three-dimensional wiring board which concerns on the Example of this invention. It is sectional drawing in the manufacturing process of the three-dimensional wiring board which concerns on the Example of this invention. It is a broken-line area | region X expansion conceptual diagram in FIG. It is the schematic in metal film formation about the three-dimensional wiring board which concerns on the Example of this invention. It is sectional drawing in the manufacturing process of the three-dimensional wiring board which concerns on the Example of this invention. It is the schematic which shows the manufacturing process which concerns on the three-dimensional shaping | molding which concerns on the Example of this invention. It is the schematic which shows the manufacturing process which concerns on the three-dimensional shaping | molding which concerns on the Example of this invention. It is the schematic which shows the manufacturing process which concerns on the three-dimensional shaping | molding which concerns on the Example of this invention. It is the schematic which shows the manufacturing process which concerns on the three-dimensional shaping | molding which concerns on the Example of this invention. It is sectional drawing in the manufacturing process of the three-dimensional wiring board which concerns on the Example of this invention. It is an expansion conceptual diagram of the broken-line area | region XVIII of FIG. It is sectional drawing in the manufacturing process of the three-dimensional wiring board which concerns on the Example of this invention. It is an expansion conceptual diagram of the broken-line area | region XX in FIG. It is the schematic in metal film formation about the three-dimensional wiring board which concerns on the Example of this invention. It is a perspective view of the three-dimensional wiring board which concerns on the Example of this invention. It is the schematic which shows the usage example of the three-dimensional wiring board which concerns on the Example of this invention.

  Embodiments of the present invention will be described below in detail with reference to the drawings. In addition, this invention is not limited to the content demonstrated below, In the range which does not change the summary, it can change arbitrarily and can implement. The drawings used to describe the embodiments schematically show the three-dimensional wiring board and its constituent members according to the present invention, and are partially emphasized, enlarged, reduced, omitted or the like for the purpose of deepening understanding. In some cases, it does not accurately represent the scale, shape, etc. of the three-dimensional wiring board and its constituent members. Furthermore, various numerical values used in the embodiments may be examples, and can be changed variously as necessary.

<Example>
Hereinafter, a method of manufacturing a three-dimensional wiring board according to an embodiment of the present invention will be described in detail with reference to FIGS. Here, FIGS. 1, 2, 4, 9, 12, 17, and 19 are cross-sectional views in the manufacturing process of the three-dimensional wiring board. 5 is an enlarged conceptual diagram of the broken line region V in FIG. 4, FIG. 10 is an enlarged conceptual diagram of the broken line region X in FIG. 9, and FIG. 18 is an enlarged conceptual diagram of the broken line region XVIII in FIG. FIG. 20 is an enlarged conceptual diagram of the broken line area XX in FIG. Furthermore, FIG. 13 thru | or FIG. 16 is schematic which shows the manufacturing process which concerns on the solid molding which concerns on the Example of this invention. 3, FIG. 6 to FIG. 8, FIG. 11, and FIG. 21 are schematic views of metal film formation for a three-dimensional wiring board according to an embodiment of the present invention. FIG. 22 is a perspective view of a three-dimensional wiring board according to an embodiment of the present invention.

  First, as shown in FIG. 1, the thermoplastic resin film 1 is prepared (preparation process). As the thermoplastic resin film 1, for example, a known resin film such as polyimide or polyethylene terephthalate can be used. There is no limitation in the thickness of the thermoplastic resin film 1, and it can change suitably according to the use and required characteristic of a three-dimensional wiring board. For example, when the three-dimensional wiring board is used alone, the thickness of the thermoplastic resin film 1 may be adjusted to about 100 μm (75 μm or more and 150 μm or less). When used together, it may be adjusted to 50 μm or less.

  In addition, the resin film to be prepared is not limited to the thermoplastic type, and if it is a resin film having a relatively large elongation at break, a thermosetting resin film or a thermosetting resin and a thermoplastic resin are laminated ( That is, a composite resin film having a structure in which a thermoplastic resin film and a thermosetting resin film are bonded together may be used. Here, the relatively large elongation at break is a value of at least 50%, preferably 150% or more. For breaking elongation, required properties are required depending on the three-dimensional shape to be molded, and in the case of a complicated and large step shape, a resin film material having a larger breaking elongation strength is required so that the material by three-dimensional molding can be withstood. .

  Next, as shown in FIG. 2, NC processing, laser processing, punching processing, or the like is performed in order to ensure conduction on the front and back surfaces (first surface 1a and second surface 1b) of the thermoplastic resin film 1. Through-hole 2 is formed using the opening technique. In the present embodiment, the opening diameter of the through hole 2 is about 0.3 mm. In FIG. 2, only one through hole 2 is shown, but an actual three-dimensional wiring board has a plurality of through holes 2. Moreover, the quantity of the through-hole 2 can also be suitably changed according to the circuit structure of a three-dimensional wiring board. Further, a positioning hole (for example, an opening diameter of 3 mm) for use as positioning at the time of three-dimensional molding, which will be described later, is removed without forming an outer edge portion of the thermoplastic resin film 1 (that is, finally forming a three-dimensional wiring board). May be formed on a portion).

  Next, on the surface of the thermoplastic resin film 1 so as to cover the first surface 1a, the second surface 1b of the thermoplastic resin film 1, and the side surface 1c of the thermoplastic resin film 1 exposed by the through holes. First metal film 3 is formed (first metal film forming step). In this embodiment, the metal is metallized on the surface of the thermoplastic resin film 1 by electroless plating using a known molecular bonding technique.

  More specifically, first, as a pretreatment, Ar plasma treatment is performed on the thermoplastic resin film 1 to remove the fragile layer on the surface of the thermoplastic resin film 1, and a functional group that is compatible with a molecular bonding agent described later. It is formed on the surface of the thermoplastic resin film 1. Thereafter, the Ar resin-treated thermoplastic resin film 1 is immersed in a solution of the molecular bonding agent 4 (FIG. 3). Here, since the molecular bonding agent 4 has a functional group (first functional group) that reacts with the thermoplastic resin film 1, the functional group of the thermoplastic resin film 1 and the functional group of the molecular bonding agent 4 are associated with each other. As shown in FIG. 4 and FIG. 5, a state in which the molecular bonding agent 4 is bonded on the surface of the thermoplastic resin film 1 is obtained. In FIG. 4, the molecular bonding agent 4 is illustrated in a layered form for easy understanding, but actually exists in a nano-level state (the thickness of the molecular bonding agent 4 is several nm) as shown in FIG. It is very thin compared to other materials. Therefore, the molecular bonding agent 4 may be omitted from FIG. In addition, the straight line extending up and down of the molecular bonding agent 4 in FIG. 5 represents a functional group, and more specifically, the straight line extending toward the thermoplastic resin film 1 is connected to the functional group of the thermoplastic resin film 1. The straight line extending to the opposite side of the thermoplastic resin film 1 represents the functional group of the molecular bonding agent 4 that reacts with the metal of the first metal film 3.

  Next, the catalyst film (Sn—Pd colloid aqueous solution) is impregnated with the thermoplastic resin film 1 subjected to the molecular bonding treatment (FIG. 6). Here, the Sn—Pd colloid is electrically adsorbed on the surface of the thermoplastic resin film 1. Thereafter, when the accelerator liquid is impregnated with the thermoplastic resin film 1 with Sn—Pd colloid supported on the surface, Sn covering the periphery of Pd is removed, and Pd ions are changed to metal Pd (FIG. 7). That is, a catalyst treatment (for example, Pd) is carried on the thermoplastic resin film 1 by performing a catalyst treatment. As the accelerator liquid, sulfuric acid (concentration: 10%) containing oxalic acid (about 0.1%) can be used. Thereafter, the thermoplastic resin film 1 carrying Pd as a catalyst is immersed in an electroless plating tank for 5 minutes. By the immersion, for example, copper is precipitated using Pd as a catalyst, and the precipitated copper is bonded to the molecular bonding agent 4 (FIG. 8). Here, since the molecular bonding agent 4 also includes a functional group (second functional group) that reacts with the metal of the first metal film 3, the end portion bonded to the thermoplastic resin film 1 of the molecular bonding agent 4. A metal is chemically bonded to the end portion (second functional group) located on the opposite side of the substrate using a catalyst. Subsequently, the thermoplastic resin film 1 is heated at 150 ° C. for 10 minutes to terminate the chemical bond between the molecular bonding agent 4 and the metal, and as shown in FIG. 9, the surface of the thermoplastic resin film 1 The formation of the first metal film 3 (that is, the molecular bonding between the thermoplastic resin film 1 and the first metal film 3) is completed so as to cover the surface.

  Here, the molecular bonding agent 4 described above is a chemical for chemically bonding a resin and a metal or the like, and a functional group that bonds to the resin and a functional group that bonds to the metal exist in one molecular structure. To do. The molecular bonding technique is a technique for chemically bonding a resin and a metal or the like using the molecular bonding agent 4 having such a structure. Further, these molecular bonding agents and molecular bonding techniques are described in more detail in Japanese Patent No. 04936344, Japanese Patent No. 05729852, and Japanese Patent No. 05083926.

  In the present embodiment, copper is used as the metal of the first metal film 3, and as shown in FIG. 10, the electroless plating is generated in the form of particles, and the first metal film 3 is formed in a porous shape by the copper particles 3a. Is done. Here, the porous shape means that the first metal film 3 does not have a film thickness that is completely formed on the film, but at least a part of the particles that are not all in contact with each other makes contact as a whole film. (It is not always necessary to conduct electricity, and even if the distance between particles is separated by three-dimensional molding, it may be conducted by a second metal film described later). In other words, in this embodiment, copper is deposited in a particle form in the range of 0.02 μm to 0.20 μm to form the first metal film 3 having a thickness capable of transmitting light. . The reason for adjusting the state (that is, the film thickness) of the first metal film 3 is that if the first metal film 3 is formed in a complete film shape that does not transmit light, the three-dimensional molding described later is performed. This is because even if a crack occurs in the first metal film 3, it is difficult to repair the crack even by a second metal film described later. More specifically, if the first metal film 3 is thinner than 0.02 μm, the contact between the resin and copper is reduced, the adhesion is lowered, and the distance between the particles after being stretched is too far apart, and the second metal film described later. It becomes difficult to repair continuity in Further, when the film is stretched in a state of transmitting light, the distance between the particles is only wide, so the crack is small. However, when the film is stretched in a complete film shape that does not transmit light, the metal film exceeding the limit (the first metal film 3). ) Is cracked and becomes a wide crack. In FIG. 10, it is shown that only one particle 3a exists in the film thickness direction of the first metal film 3. However, if the first metal film 3 is porous, a plurality of particles 3a. May be laminated in the film thickness direction.

  The process of forming the first metal film 3 in a porous shape will be described in detail below. When the copper deposition further continues from the state where the copper shown in FIG. 8 has started to be deposited, the newly deposited copper is either the molecular bonding agent 4 or the copper that has already precipitated and reacts with the molecular bonding agent 4. Make chemical bonds. At this time, since the activity of Pd, which is a catalyst due to the autocatalytic action of copper, is higher, the production of copper proceeds in the surface direction (that is, the direction spreading on the surface of the thermoplastic resin film 1). It will also begin to proceed in the direction (that is, the film thickness direction of the first metal film 3). And when the autocatalytic action of copper starts, copper will precipitate sequentially and the metal bond of copper will advance, the growth of copper will advance by a thickness direction, and a film thickness will increase. In this state, as shown in FIG. 11, although there is a void portion where copper does not exist and there is a portion where electrical conduction is not partially obtained, the formed metal film as a whole is electrically Since there is a connection path, electrical continuity is obtained. As described above, such a state is a porous shape in the present embodiment. In such a porous first metal film 3, even if the elongation at break of copper is exceeded, a large crack does not occur, and the distance between the copper molecules is only partially expanded. .

  In this embodiment, since the thermoplastic resin film 1 and the first metal film 3 are chemically bonded via the molecular bonding agent 4, the interface between the thermoplastic resin film 1 and the first metal film 3 is formed. Both members can be firmly joined while being smooth. Thereby, it is not necessary to form unevenness on the surface of the thermoplastic resin film 1, and the manufacturing process can be facilitated, the manufacturing cost can be reduced, and the wiring circuit to be formed can have high definition. The molecular bonding agent to be used is not limited to one type. For example, the molecular bonding agent 4 is mixed with another molecular bonding agent having a functional group that reacts with the molecular bonding agent 4 and the first metal film 3. The compound formed may be used, and can be appropriately changed according to the materials of the thermoplastic resin film 1 and the first metal film 3.

  Further, the material of the first metal film 3 is not limited to copper, and includes, for example, various metals such as silver, gold, or nickel, or an alloy or each metal including at least one of these metals and copper. Although a laminated material may be used, it is preferable to use a metal that is relatively soft and has a high elongation at break. Here, since the film thickness for realizing the state of transmitting light and conducting is different depending on the metal to be used, the first metal film 3 is formed in a porous shape when another metal is used. Therefore, the film thickness is adjusted as appropriate so that the above can be realized.

  Furthermore, the method for forming the first metal film 3 is not limited to the method using the molecular bonding technique described above, and if the first metal film 3 can be formed in a porous shape, for example, sputtering, vapor deposition, Alternatively, a film forming technique such as wet plating other than the method using molecular bonding may be used. And about formation of the 1st metal film 3, according to the metal material used, you may select the optimal film-forming technique.

  In this embodiment, the first metal film is formed so as to cover the first surface 1a, the second surface 1b of the thermoplastic resin film 1 and the side surface 1c of the thermoplastic resin film 1 exposed by the through holes. 3, the first metal film 3 is formed only on either the first surface 1 a or the second surface 1 b of the thermoplastic resin film 1 in accordance with the required structure and characteristics of the three-dimensional wiring board. It may be formed. That is, the three-dimensional wiring board of the present invention includes not only those having wiring patterns formed on both sides but also those having wiring patterns formed only on one side.

  Next, as shown in FIG. 12, the first metal film 3 is subjected to patterning by photolithography to form a desired wiring pattern (pattern forming step). Specifically, a resist film is thermocompression bonded to the surface of the thermoplastic resin film 1 on which the first metal film 3 is formed, and exposure and development are performed using a mask film on which a predetermined pattern is printed. Subsequently, the first resist film 3 is etched using the developed resist film as an etching mask to form a desired wiring pattern. Thereafter, the resist film is peeled and removed. Here, it is preferable to adjust the shape of the wiring pattern (wiring width, wiring length, wiring interval, etc.) in consideration of the elongation and deformation of the first metal film 3 due to three-dimensional molding described later.

  As described above, since the first metal film 3 is patterned by photolithography, a pattern with higher definition can be realized than patterning using an inkjet printing technique or a gravure offset printing technique. That is, the first metal film 3 has a higher resolution (that is, excellent linearity and high-definition wiring formation) than a wiring pattern patterned using an ink jet printing technique or a gravure offset printing technique. )Become.

  Next, the thermoplastic resin film 1 in a state where the first metal film 3 is formed is subjected to heat treatment and pressure treatment to perform three-dimensional molding (three-dimensional molding step). As a specific three-dimensional molding process, first, the positioning of the thermoplastic resin film 1 with respect to the molding die 11 is performed using the positioning holes described above. This is for matching the molding position and the wiring pattern position. That is, as shown in FIG. 13, the thermoplastic resin film 1 is disposed between the upper mold 12 and the lower mold 13 of the mold 11. Subsequently, as shown in FIG. 14, the upper mold 12 is heated by the upper heating device 14, and the lower mold 13 is heated by the lower heating device 15. Here, in this example, since a polyimide film is used for the thermoplastic resin film 1, the heating temperature is adjusted within a range of 270 ° C. to 350 ° C. (for example, 300 ° C.) higher than the glass transition temperature of the material. However, the heating temperature is appropriately adjusted depending on the material of the thermoplastic resin film 1. Here, the heating temperature is required to be equal to or higher than the glass transition temperature and equal to or lower than the heat resistant temperature of the thermoplastic resin film 1, and is preferably set to the lowest possible temperature within the range. This is to reduce a decrease in adhesion due to heating of the first metal film 3 and the thermoplastic resin film 1 formed on the thermoplastic resin film 1.

  While performing the heat treatment, the upper die 12 and the lower die 13 are brought closer to each other, and the thermoplastic resin film 1 is pressed from above and below with a desired pressure (for example, 10 MPa) (FIG. 15). The desired pressure is appropriately adjusted in consideration of the material of the thermoplastic resin film 1 and the point that the desired three-dimensional molding becomes difficult if the pressure is too weak. Then, after the press treatment is completed, the thermoplastic resin film 1 is taken out from the mold 11 (FIG. 16), and the three-dimensional molding of the thermoplastic resin film 1 is completed. In other words, the formation of the three-dimensional wiring board substrate 16 is completed. In FIGS. 13 to 16, the first metal film 3 is not shown. Further, although depending on the required three-dimensional shape, the shape of the actual three-dimensional wiring board has a plurality of irregularities, so that the mold 11 also has a plurality of irregularities. A structure in which a plurality of projections and depressions with the lower mold 13 are fitted to each other may be employed.

  As shown in FIG. 17, the thermoplastic resin film 1 (that is, the three-dimensional wiring board base material 16) that has undergone the three-dimensional molding is likely to have a crack 17 in the bent portion 1 d that is bent by the three-dimensional molding. Yes. Here, as shown in FIG. 18, the crack 17 is a gap formed by an increase in the interparticle distance of the copper particles 3 a constituting the first metal film 3, and is a complete metal film shape that does not transmit light. The structure is different from that of a crack generated by stretching the metal film. Depending on the film formation state of the first metal film 3 and the three-dimensional shape formed by three-dimensional molding, a crack may not occur. In addition, as shown in FIG. 18, the crack 17 is caused by the thermoplastic resin film 1 being stretched, whereas the first metal film 3 has an increased interparticle distance, but the first metal film 3 is Since it is formed in a porous shape, the depth of the crack 17 itself is equivalent to the size of the particle 3a and becomes very small, and further compared with the case where the first metal film 3 is formed in a complete film shape. Thus, the width of the crack 17 is also reduced. That is, the substrate 16 for a three-dimensional wiring board according to the present embodiment is in a state in which the crack 17 can be repaired more easily than in the case where the first metal film 3 is formed in a complete film shape. It has become. In other words, the crack 17 (gap between the particles) is small when stretched in a state where light is transmitted because the distance between the particles is only large, but the limit is exceeded when the film is stretched in a complete film shape that does not transmit light. The metal film is cracked and a wide crack is generated.

  As a method for reducing the occurrence of the crack 17 in the bent portion 1d, the above-described three-dimensional molding may be performed in a state where the thermoplastic resin film 1 is sandwiched between two protective films. Thereby, the shape of the corner | angular part 1e in the bending part 1d can be made slightly smooth, and generation | occurrence | production of the crack 17 can be suppressed. Here, the protective film is preferably formed of the same material as the thermoplastic resin film 1. Further, as a method of reducing the occurrence of the crack 17 in the bent portion 1d, the shape of the corner portion 1e in the bent portion 1d is curved, or the angle is made smaller than 90 degrees (for example, 75 degrees to 85 degrees). In addition, the mold 11 may be designed.

  In this embodiment, the thermoplastic resin film 1 is pressed from above and below using the upper mold 12 and the lower mold 13. However, the thickness uniformity of the thermoplastic resin film 1 after the heat press is performed. May be used, other press working methods such as a vacuum press or a pneumatic press may be used.

  Next, the 2nd metal film 21 is formed so that the surface of the 1st metal film 3 of the base material 16 for three-dimensional wiring boards may be coat | covered (2nd metal film formation process: FIG. 19). In this embodiment, a metal is additionally deposited on the surface of the first metal film 3 by general electroless plating.

  As a specific second metal film forming step, first, the three-dimensional wiring substrate base material 16 is desired in order to remove the oxide layer formed on the surface of the three-dimensional wiring substrate base material 16 by heating in the molding step. Soak in a cleaning solution (for example, acid degreasing solution, sulfuric acid solution). Subsequently, a catalyst treatment is performed to cause the first metal film 3 of the substrate 16 for a three-dimensional wiring board to react with a catalyst of a type that replaces the first metal film 3 (for example, a Pd catalyst). The material 16 is immersed in an electroless plating solution. Then, the metal is selectively deposited only around the first metal film 3 where the catalyst exists on the surface, and the metal is not formed in the region that does not become a wiring circuit (that is, the exposed region of the thermoplastic resin film 1). Is not deposited, and additional patterning of the second metal film 21 becomes unnecessary.

  In this embodiment, copper is used as the metal of the second metal film 21, and as can be seen from FIGS. 20 and 21, a plurality of copper particles 21 a are deposited on the particles 3 a of the first metal film 3. . Here, the second metal film 21 is formed in a complete film shape without being formed in a porous shape. In particular, in this example, the second metal film 21 having a film thickness of 5 μm or more could be formed by immersion for 1 hour. In the present embodiment, the particles 21a constituting the second metal film 21 grow around the particles 3a constituting the first metal film 3, and the thickness direction of the second metal film 21 and the thickness thereof are increased. It grows to the same extent with respect to the direction orthogonal to the direction (planar direction of the second metal film 21). Thereby, the 2nd metal film 21 can be formed so that the crack 17 of the 1st metal film 3 produced by three-dimensional molding may be repaired. That is, the formation of the second metal film 21 forms a wiring circuit (a conductor layer made up of the first metal film 3 and the second metal film 21) that can recover the conduction failure due to the crack 17 and realize reliable conduction. can do. Here, the repair of the crack 17 by the second metal film 21 can repair the width of the crack 17 about twice the film thickness of the second metal film 21, and therefore the film thickness of the second metal film 21 is assumed. It may be adjusted to ½ times or more of the maximum width of the crack 17, more preferably adjusted to a film thickness comparable to the width of the crack 17. The second metal film 21 is also generated on the side wall 1c of the through hole 2 in the same manner as the surface layer, and it is possible to repair the conduction even if there is a front and back conduction failure due to the through hole 2.

  Furthermore, in this embodiment, the thickness of the conductor layer (wiring pattern thickness) required for the wiring circuit is insufficient with the thickness of the first metal film 3, but the second metal film 21 is formed. The required layer thickness of the conductor layer can be ensured.

  In the present embodiment, the second metal film 21 is formed by electroless plating. However, if the second metal film 21 can be finally formed only on the surface of the first metal film 3, another film is formed. Techniques (for example, electrolytic plating, application of conductive ink, etc.) may be used. However, when the second metal film 21 is formed by electroless plating as in this embodiment, it can be formed even if the independent wiring, that is, the wiring circuit is electrically separated from the outer peripheral portion of the molded body. However, when the second metal film 21 is formed by electrolytic plating, it is necessary that all the wirings are electrically connected to the outer peripheral portion of the molded body, which is taken into consideration at the time of design including the installation of the feeder line. It will be necessary. Further, in this case, when a non-conductive portion is generated by the three-dimensional molding, the second metal film 21 cannot be formed because electricity does not flow beyond the non-conductive portion.

  The material of the second metal film 21 is not limited to copper, and other metals such as nickel or nickel chrome, nickel copper, gold, or silver or alloys containing these may be used for the three-dimensional wiring board. The material can be appropriately adjusted according to required characteristics and reliability.

  After passing through the manufacturing process described above, the surface of the second metal film 21 is subjected to a rust preventive treatment, and the three-dimensional wiring board is constituted by the thermoplastic resin film 1, the first metal film 3, and the second metal film 21. 30 is completed. In addition, you may further form the protective film which consists of a soldering resist in the required part of the surface of the three-dimensional wiring board 30. FIG. In this case, a method such as applying a solder resist to a necessary portion by an inject method using an ink jet apparatus can be considered.

  As can be seen from FIG. 19 to FIG. 21, in the three-dimensional wiring board 30 according to the present example, cracks generated in the first metal film 3 formed in a porous shape on the surface of the thermoplastic resin film 1 are caused by the first metal film. It is reliably repaired by the second metal film 21 formed with a film thickness thicker than 3, and has excellent reliability in which disconnection of the wiring circuit is prevented. In addition, a fine wiring pattern (for example, L / S = 30/30 μm) can be realized more easily than the MID substrate by the manufacturing method described above, and miniaturization and cost reduction are also realized. Yes.

  As shown in FIG. 22, the finally formed three-dimensional wiring board 30 has different dimensions (that is, heights) in the Z direction at the respective positions in the X direction and the Y direction. Unevenness is formed. FIG. 22 is a schematic diagram for explaining the three-dimensional shape of the three-dimensional wiring board 30, and the wiring pattern and the through hole are omitted.

  Furthermore, the three-dimensional wiring board 30 according to the present embodiment has a conductor layer composed of the first metal film 3 and the second metal film 21 on the surface (the first surface 1a and the second surface 1b) of the thermoplastic resin film 1. Since it has a three-dimensional shape, it can be applied to various uses. For example, when the thermoplastic resin film 1 is relatively thick (for example, 100 μm), as shown in FIG. 23, the electronic component 41 mounted on the other mounting substrate 40 is shielded against electromagnetic waves while other It is possible to mount the electronic component 42 on the surface. In this case, in order to achieve electromagnetic shielding by the conductor layers (the first metal film 3 and the second metal film 21) located on the electronic component 41 side (that is, the inner side), the inner conductor layer is patterned. (That is, a solid pattern is formed). Further, the three-dimensional wiring board 30 is fixed to the mounting board 40 using a bonding member such as solder or a conductive adhesive. In addition, by replacing the conductor layer to be patterned and the conductor layer not to be patterned, the electronic component 42 is arranged in the space shielded by the three-dimensional wiring board 30 and the mounting substrate 40, and the electronic component 41 and the electronic component 42 are separated. Thus, electromagnetic shielding may be achieved.

  Further, a conductor layer not subjected to patterning is grounded to function as a GND layer, and a single characteristic impedance control pattern or a differential impedance control pattern is formed on the conductor layer located on the opposite side to the conductor pattern not subjected to the patterning. Good. With such a structure, impedance control can be achieved in the three-dimensional wiring board 30.

  When the thermoplastic resin film 1 is made relatively thin (for example, 50 μm or less), the three-dimensional wiring board 30 is bonded to another mold resin having a three-dimensional shape to replace the conventional MID board. Can be used as a body. This is because, since the thermoplastic resin film 1 is thin, even if the three-dimensional wiring board 30 is bonded to another mold resin, the thickness of the composite made of the three-dimensional wiring board 30 and the other mold resin does not increase, and the composite This is because the strength of the body can be ensured. Moreover, since the said composite body has the conductor layer formed in both surfaces of the thermoplastic resin film 1 compared with the existing MID board | substrate, it aims at the freedom degree of a design and narrowing of an external size easily. be able to.

  Further, if a two-dimensionally molded portion is formed by connecting a flat thermoplastic resin film and wiring is provided to connect the two portions, a structure and usage method like a so-called flex-rigid substrate can be obtained.

<Embodiment of the present invention>
The manufacturing method of the three-dimensional wiring board according to the first embodiment of the present invention is a resin film having a breaking elongation of 50% or more (the actually used film is a 125 μm-thick thermoplastic polyimide material having a breaking elongation of 160 to 170%). A first metal film forming step for forming a first metal film on the surface of the resin film, and pattern formation for patterning the first metal film by photolithography to form a desired pattern A step, a three-dimensional molding step of three-dimensionally molding by applying heat and pressure to the resin film, a second metal film forming step of forming a second metal film on the patterned first metal film, And forming the first metal film in a porous shape by depositing metal in the form of particles and adjusting the film thickness in the first metal film formation step.

  In the first embodiment, since the second metal film is formed using the patterned first metal film, a special apparatus or process for patterning the first metal film and the second metal film is unnecessary. In addition, an existing wiring board manufacturing apparatus can be used, and a finer wiring pattern can be realized at a lower cost. Further, since the first metal film and the second metal film are formed on both surfaces of the resin film, the degree of freedom of the wiring circuit is higher than that of the single-sided substrate, and the size can be easily reduced. Furthermore, since the first metal film is formed in a porous shape, it is possible to prevent the first metal film from generating a crack that cannot be repaired in the subsequent three-dimensional formation process. From the above, the manufacturing method of a three-dimensional wiring board according to the present invention can manufacture a three-dimensional wiring board having excellent reliability by preventing the wiring circuit from being disconnected while miniaturizing the wiring circuit and reducing the cost.

  The manufacturing method of the three-dimensional wiring board which concerns on 2nd embodiment of this invention is the said 1st metal film located in the bending part of the said resin film bent by the three-dimensional shaping | molding in the said three-dimensional shaping | molding process in the 1st embodiment mentioned above. In the case where a crack occurs, the crack is repaired by the second metal film. Thereby, it is possible to manufacture a highly reliable three-dimensional wiring board without causing poor conduction in the wiring circuit.

  The manufacturing method of the three-dimensional wiring board according to the third embodiment of the present invention is the above-described second embodiment, wherein the thickness of the second metal film is set to ½ times the width of the crack in the second metal film formation step. That's it. Thereby, the crack generated in the first metal film can be reliably repaired by the second metal film.

  The manufacturing method of the three-dimensional wiring board which concerns on 4th embodiment of this invention is copper, silver, nickel, or gold in these 1st metal film formation processes in any of the 1st thru | or 3rd embodiment mentioned above, or these. An alloy containing at least one of the above is deposited in a particle form in a range of 0.02 μm to 0.20 μm. Thereby, the crack which arises in a 1st metal film can be made small without impairing adhesion | attachment of resin and a metal, and it can repair reliably by a 2nd metal film.

  A manufacturing method of a three-dimensional wiring board according to a fifth embodiment of the present invention is the method for manufacturing a three-dimensional wiring board according to any one of the first to fourth embodiments described above, using the molecular film in the first metal film forming step. It is to chemically bond one metal film. Thereby, the resin film and the first metal film can be reliably bonded without forming irregularities on the resin film, and the manufacturing cost can be reduced and the wiring pattern can be made high definition.

  The manufacturing method of a three-dimensional wiring board according to a sixth embodiment of the present invention is the fifth embodiment described above, wherein the molecular bonding agent includes a first functional group that reacts with the resin film and a metal of the first metal film. A second functional group that reacts. Thereby, a resin film and a 1st metal film can be joined more reliably, and the further reduction of manufacturing cost can be aimed at.

  The manufacturing method of the three-dimensional wiring board which concerns on the 7th embodiment of this invention is the said 1st metal film on both surfaces of the said resin film in the said 1st metal film formation process in any one of the 1st thru | or 6th embodiment mentioned above. The first metal patterned in both of the first metal films formed on both surfaces of the resin film in the pattern forming step and patterned in the second metal film forming step The second metal film is formed on any of the films. Thereby, a wiring pattern can be formed on both surfaces of the three-dimensional wiring board, and the density of the three-dimensional wiring board can be increased.

  A three-dimensional wiring board according to an eighth embodiment of the present invention includes a resin film having a three-dimensional shape and having a break elongation of 50% or more, and a first pattern having a desired pattern formed on the surface of the resin film. A metal film and a second metal film formed on the first metal film, and the first metal film has a film thickness so as to have a porous structure in which metal is deposited in particles. Is adjusted.

  In the eighth embodiment, since the second metal film is formed using the patterned first metal film, a special apparatus or process for patterning the first metal film and the second metal film is not required. Thus, a lower cost and finer wiring pattern is realized. In addition, since the first metal film and the second metal film are formed on both surfaces of the resin film, the degree of freedom of the wiring circuit is higher than that of the single-sided substrate, and miniaturization can be easily realized. Further, since the first metal film is formed in a porous shape, even if a crack occurs in the first metal film, the second metal film is repaired, and a wiring circuit having no conduction failure and having excellent reliability is realized. ing. As described above, the three-dimensional wiring board according to the present invention achieves fine processing and cost reduction of the wiring circuit, and has excellent reliability by preventing disconnection of the wiring circuit.

  A three-dimensional wiring board according to a ninth embodiment of the present invention is the eighth embodiment described above, wherein the second metal film repairs a crack generated in the first metal film at a bent portion of the resin film. . As a result, no poor conduction occurs in the wiring circuit, and excellent reliability can be realized.

  In the three-dimensional wiring board according to the tenth embodiment of the present invention, in the ninth embodiment described above, the thickness of the second metal film is ½ times or more the width of the crack. Thereby, the crack generated in the first metal film can be reliably repaired by the second metal film.

  In the three-dimensional wiring board according to the eleventh embodiment of the present invention, in any one of the eighth to tenth embodiments described above, the first metal film is formed by depositing 0.02 μm or more and 0.20 μm or less of copper in the form of particles. It is to have a porous structure. Thereby, the crack which arises in the 1st metal film can be made small, and it can repair reliably by the 2nd metal film.

  A three-dimensional wiring board according to a twelfth embodiment of the present invention, in any one of the eighth to eleventh embodiments, includes the resin film and the first metal between the resin film and the first metal film. It has a molecular bonding agent that chemically bonds the membrane. Thereby, since it becomes unnecessary to form unevenness in the resin film, the manufacturing cost can be reduced, and the resin film and the first metal film can be firmly bonded.

  In the three-dimensional wiring board according to the thirteenth embodiment of the present invention, in any one of the twelfth embodiments described above, the molecular bonding agent includes a first functional group that reacts with the resin film and a metal of the first metal film. To react. Thereby, a resin film and a 1st metal film can be joined more firmly, and the further reduction of manufacturing cost can be aimed at.

  In the three-dimensional wiring board according to the fourteenth embodiment of the present invention, in any one of the eighth to thirteenth embodiments described above, the first metal film is formed on both surfaces of the resin film. As a result, the density of the three-dimensional wiring board can be increased.

  A substrate for a three-dimensional wiring board according to a fifteenth embodiment of the present invention includes a resin film having a break elongation of 50% or more, a first metal film having a desired pattern formed on the surface of the resin film, The film thickness of the first metal film is adjusted so as to have a porous structure formed by depositing metal particles.

  In the fifteenth embodiment, since the first metal film is formed in a porous shape, even if a crack occurs in the first metal film, the crack can be repaired by additional film formation, so that the final conduction failure Prevention of this is made.

  A substrate for a three-dimensional wiring board according to a sixteenth embodiment of the present invention is the above-described fifteenth embodiment, wherein the resin film and the first metal film are interposed between the resin film and the first metal film. It has a molecular bonding agent that chemically bonds. Thereby, since it becomes unnecessary to form unevenness in the resin film, the manufacturing cost can be reduced and the resin film and the first metal film can be firmly bonded.

  In the substrate for a three-dimensional wiring board according to the seventeenth embodiment of the present invention, in any one of the fifteenth or sixteenth embodiments described above, the first metal film is formed on both surfaces of the resin film. is there. As a result, the density of the three-dimensional wiring board can be increased.

DESCRIPTION OF SYMBOLS 1 Thermoplastic resin film 1a 1st surface 1b 2nd surface 1c Side surface 1d Bending part 1e Corner | angular part 2 Through-hole 3 1st metal film 3a Particle | grain 4 Molecular bonding agent 11 Mold 12 Upper mold 13 Lower mold 14 Upper part Heating device 15 Lower heating device 16 Base material for three-dimensional wiring board 17 Crack 21 Second metal film 21a Particle 30 Three-dimensional wiring board 40 Mounting board 41 Electronic component 42 Electronic component

Claims (17)

A preparation step of preparing a resin film having an elongation at break of 50% or more;
A first metal film forming step of forming a first metal film on the surface of the resin film;
Patterning the first metal film by photolithography to form a desired pattern; and
A three-dimensional molding process in which three-dimensional molding is performed by applying heat and pressure to the resin film;
A second metal film forming step of forming a second metal film on the patterned first metal film,
In the first metal film forming step, a method of manufacturing a three-dimensional wiring board, wherein the first metal film is formed in a porous shape by depositing metal in a particle shape and adjusting the film thickness.   In the second metal film forming step, when the first metal film located on the bent portion of the resin film bent by the three-dimensional molding in the three-dimensional molding step is cracked, the second metal film forms the crack. The manufacturing method of the three-dimensional wiring board of Claim 1 which repairs.   3. The method for manufacturing a three-dimensional wiring board according to claim 2, wherein, in the second metal film forming step, the thickness of the second metal film is set to ½ times or more the width of the crack.   4. The method according to claim 1, wherein in the first metal film forming step, 0.02 μm or more and 0.20 μm or less of copper, silver, nickel, gold, or an alloy containing at least one of these is deposited in a particle shape. The manufacturing method of the three-dimensional wiring board of Claim 1.   5. The method of manufacturing a three-dimensional wiring board according to claim 1, wherein in the first metal film forming step, the resin film and the first metal film are chemically bonded using a molecular bonding agent.   The method of manufacturing a three-dimensional wiring board according to claim 5, wherein the molecular bonding agent includes a first functional group that reacts with the resin film and a second functional group that reacts with a metal of the first metal film. In the first metal film forming step, the first metal film is formed on both surfaces of the resin film,
In the pattern formation step, patterning is performed on any of the first metal films formed on both surfaces of the resin film,
The manufacturing of the three-dimensional wiring board according to any one of claims 1 to 6, wherein, in the second metal film forming step, the second metal film is formed on any of the patterned first metal films. Method. A resin film having a three-dimensional shape and having an elongation at break of 50% or more;
A first metal film formed on the surface of the resin film and having a desired pattern;
A second metal film formed on the first metal film,
The first metal film is a three-dimensional wiring board whose film thickness is adjusted so as to have a porous structure in which metal is deposited in particles.   The three-dimensional wiring board according to claim 8, wherein the second metal film repairs a crack generated in the first metal film at a bent portion of the resin film.   10. The three-dimensional wiring board according to claim 9, wherein the thickness of the second metal film is not less than ½ times the width of the crack.   11. The three-dimensional wiring board according to claim 8, wherein the first metal film has a porous structure in which copper is deposited in a particulate form in a range of 0.02 μm to 0.20 μm.   The three-dimensional wiring board according to any one of claims 8 to 11, further comprising a molecular bonding agent that chemically bonds the resin film and the first metal film between the resin film and the first metal film.   The three-dimensional wiring board according to claim 12, wherein the molecular bonding agent includes a first functional group that reacts with the resin film and a second functional group that reacts with a metal of the first metal film.   The three-dimensional wiring board according to claim 8, wherein the first metal film is formed on both surfaces of the resin film. A resin film having an elongation at break of 50% or more;
A first metal film that is formed on the surface of the resin film and has a desired pattern;
The first metal film is a substrate for a three-dimensional wiring board, the film thickness of which is adjusted so as to have a porous structure in which metal is deposited in the form of particles.   The three-dimensional wiring board substrate according to claim 15, further comprising a molecular bonding agent that chemically bonds the resin film and the first metal film between the resin film and the first metal film. The substrate for a three-dimensional wiring board according to claim 15 or 16, wherein the first metal film is formed on both surfaces of the resin film.

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