JPWO2016042788A1 - Light emitting module substrate, light emitting module, and lighting fixture - Google Patents

Abstract

  According to the embodiment, a metal base material, an insulating layer provided on the base material, and a wiring layer provided on the insulating layer, wherein the insulating layer includes a first region and , Including a second region provided between the first region and the substrate, wherein the first region includes a plurality of first microstructures and silicon oxide, and the second region includes the second region, A plurality of second microstructures having higher thermal conductivity than the first microstructure and silicon oxide are included.

Description

  Embodiments described herein relate generally to a light emitting module substrate, a light emitting module, and a lighting fixture.

  For example, there is a light emitting device (LED module) that emits white light by combining a semiconductor light emitting element that emits blue light and a phosphor that converts the wavelength of light. Such a light emitting device can be applied to an illumination device such as a projector. In the light emitting device, improvement in efficiency is required. In the board | substrate used for an LED module, improving efficiency is calculated | required.

JP 2012-238855 A

  Embodiments of the present invention provide a light emitting module substrate, a light emitting module, and a lighting fixture that can improve efficiency.

  According to an embodiment of the present invention, a metal base, an insulating layer provided on the base, and a wiring layer provided on the insulating layer, the insulating layer includes: One region, and a second region provided between the first region and the substrate, the first region including a plurality of first microstructures and silicon oxide, and the second region Includes a plurality of second microstructures having higher thermal conductivity than the first microstructure, and silicon oxide.

  According to the embodiments of the present invention, a light emitting module substrate, a light emitting module, and a lighting fixture that can improve efficiency are provided.

FIG. 1A and FIG. 1B are schematic views illustrating the light emitting device and the lighting device according to the first embodiment. 2A to 2C are schematic plan views illustrating the light emitting device according to the first embodiment. FIG. 3A to FIG. 3C are plan views illustrating the light emitting device according to the first embodiment. 1 is a schematic cross-sectional view illustrating a light emitting device according to a first embodiment. FIG. 6 is a schematic cross-sectional view illustrating a light emitting device according to a second embodiment. FIG. 6A and FIG. 6B are graphs illustrating the light emitting module substrate according to the embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A and FIG. 1B are schematic views illustrating the light emitting device and the lighting device according to the first embodiment.
FIG. 1A is a plan view. FIG. 1B is a cross-sectional view illustrating a part of the cross section along line A1-A2 of FIG.
As shown in FIGS. 1A and 1B, the light emitting device 110 (light emitting module) according to the present embodiment includes a light emitting unit 40, a heat radiating member 51, and a heat conducting member 52.

  The light emitting unit 40 is provided on the heat dissipation member 51. A heat conducting member 52 is provided between the heat radiating member 51 and the light emitting unit 40.

  That is, the heat conducting member 52 is provided on the heat radiating member 51, and the light emitting unit 40 is provided on the heat conducting member 52. In this example, one light emitting unit 40 is provided on the heat dissipation member 51. As will be described later, a plurality of light emitting units 40 may be provided on one heat radiating member 51.

  In the present specification, the state provided above includes not only the state provided directly above but also the state where another element is inserted therebetween.

  A direction from the heat radiating member 51 toward the light emitting unit 40 is defined as a stacking direction. In the present specification, the state of being stacked includes not only the state of being stacked in direct contact but also the state of being stacked with another element inserted therebetween.

  The stacking direction is the Z-axis direction. One axis perpendicular to the Z-axis direction is taken as the X-axis direction. A direction perpendicular to the Z-axis direction and perpendicular to the X-axis direction is taken as a Y-axis direction.

  As shown in FIG. 1B, the heat radiating member 51 has, for example, a plate shape. The main surface of the heat radiating member 51 is substantially parallel to the XY plane, for example. The planar shape of the heat dissipation member 51 is, for example, a rectangle. The heat radiating member 51 has, for example, first to fourth sides 55a to 55d. The second side 55b is separated from the first side 55a. The third side 55c connects one end of the first side 55a and one end of the second side 55b. The fourth side 55d is separated from the third side 55c, and connects the other end of the first side 55a and the other end of the second side 55b. The planar corner portion of the heat radiating member 51 may be curved. The planar shape of the heat dissipating member 51 does not have to be rectangular and is arbitrary. The edge part 51r of the heat radiating member 51 may be curved, for example.

  For example, a metal substrate is used for the heat dissipation member 51. For the heat radiating member 51, for example, copper or aluminum is used.

  The light emitting unit 40 emits light. At the same time, the light emitting unit 40 generates heat. The heat conducting member 52 efficiently conducts heat generated in the light emitting unit 40 to the heat radiating member 51. For the heat conducting member 52, for example, solder or the like is used. That is, the heat conducting member 52 includes solder. In this case, the heat conducting member 52 joins the light emitting unit 40 and the heat radiating member 51. For example, an AuSn alloy or the like is used for the heat conducting member 52, for example. The thickness t52 of the heat conducting member 52 is, for example, 10 μm (micrometer) or less.

  The heat conducting member 52 may be liquid or solid lubricating oil (grease). In order to further increase the thermal conductivity than the lubricating oil (grease), a conductive lubricating oil (conductive grease) in which a metal powder such as alumina is mixed with silicone may be used for the heat conducting member 52. .

  The light emitting unit 40 includes a mounting substrate unit 15 (light emitting module substrate) and a light emitting element unit 35.

The mounting substrate unit 15 includes a substrate 10, a first metal layer 11, and a second metal layer 12.
For example, a metal substrate or the like is used as the substrate 10. For example, the substrate 10 includes Al, Cu, or the like. As the substrate 10, a metal substrate such as Al or Cu is used.
The substrate 10 has a first main surface 10a and a second main surface 10b. The 2nd main surface 10b is a surface on the opposite side to the 1st main surface 10a. The heat dissipating member 51 faces the second main surface of the substrate 10. In other words, the second main surface 10b is a surface on the heat radiating member 51 side.

  In the present specification, the state of facing each other includes not only the state of directly facing but also the state of inserting another element therebetween.

  The first major surface 10 a includes a mounting area 16. For example, the mounting region 16 is separated from the outer edge 10r (edge portion 10ue) of the first main surface 10a. In this example, the mounting region 16 is provided in the central portion of the first main surface 10a. The first major surface 10a further includes a peripheral region 17. The peripheral area 17 is provided around the mounting area 16.

The first metal layer 11 is provided on the mounting region 16 on the first main surface 10a side. On the other hand, the second metal layer 12 is provided on the second main surface 10b side.
Details of the example of the mounting substrate unit 15 will be described later.

2A to 2C are schematic plan views illustrating the light emitting device according to the first embodiment.
FIG. 2A is a plan view illustrating the first main surface 10 a of the substrate 10. FIG. 2B is a plan view illustrating the pattern of the first metal layer 11. FIG. 2C is a plan view illustrating the pattern of the second metal layer 12.

FIG. 3A to FIG. 3C are plan views illustrating the light emitting device according to the first embodiment. FIG. 3A is a plan view illustrating the pattern of the first metal layer 11. FIG. 3B is a cross-sectional view illustrating a part of the cross section along line A1-A2 of FIG. FIG. 3C is a cross-sectional view illustrating a part of a cross section along line B1-B2 of FIG.
As illustrated in FIGS. 3A to 3C, the substrate 10 includes a reflective layer 81 and a heat conductive layer 82.

As shown in FIGS. 3B and 3C, the heat conductive layer 82 is provided on the substrate 10 (on the first main surface 10a). The substrate 10 and the heat conductive layer 82 are chemically bonded through oxygen, for example. Thereby, high joint strength is obtained.
The heat conductive layer 82 has glass (SiO ₂ ) as a main component. That is, the heat conductive layer 82 includes a glass layer (SiO ₂ ) 82a. The heat conductive layer 82 is, for example, a high heat conductive layer as compared with the reflective layer 81. The heat conductive layer 82 includes, for example, a ceramic filler (first ceramic filler 82b) including aluminum nitride (for example, AlN). A plurality of first ceramic fillers 82b containing aluminum nitride are dispersed in the glass (SiO ₂ ) layer.

High thermal conductivity is obtained by dispersing the plurality of first ceramic fillers 82b containing aluminum nitride in the glass (SiO ₂ ) layer. The thermal conductivity of the heat conductive layer 82 is, for example, 2 W / m · K or more and 7 W / m · K or less.

  The thickness t82 of the heat conductive layer 82 is, for example, not less than 20 μm and not more than 100 μm. In consideration of high thermal conductivity and difficulty in peeling, it is more preferably 30 μm or more and 60 μm or less. The withstand voltage of the heat conductive layer 82 is not less than 0.2 kV and not more than 7 kV, for example. More preferably, it is 0.5 kV or more and 5 kV or less.

  The heat conductive layer 82 includes a first region R1 and a second region R2. The first metal layer 11 is provided on the second region R2. The second region R2 corresponds to a part of the mounting region 16. The first region R1 is included in the mounting region 16. The first region R1 may be included in the peripheral region 17.

  As shown in FIGS. 3A to 3C, the reflective layer 81 is provided on the heat conductive layer 82. For example, the reflective layer 81 is provided on the first region R1 of the heat conductive layer 82 (substrate 10). The reflective layer 81 may be provided not only on the mounting region 16 but also on the peripheral region 17.

  On the other hand, the wiring layer (first metal layer 11) is provided on the second region R2. A part of the reflective layer 81 may be located on a part of the wiring layer. A part of the wiring layer may be located on a part of the reflective layer 81.

  The reflective layer 81 and the heat conductive layer 82 may be chemically bonded through, for example, oxygen. Thereby, high joint strength is obtained.

The reflective layer 81 has glass (SiO ₂ ) as a main component. For this reason, the reflective layer 81 is not easily deteriorated by heat or light. The reflective layer 81 includes, for example, a zirconium oxide (ZrO ₂ ) ceramic filler (second ceramic filler 81b). Thereby, the reflective layer 81 can obtain a high reflectance, for example.

In the reflection layer 81, a glass highly stable (SiO _2), therein, by dispersing the second ceramic filler 81b having a refractive index different from that of the glass (SiO _2), a high reflectance can be obtained . The average value of the total light reflectance of the reflective layer 81 is, for example, 85% or more. More preferably, it is 92% or more. The total light reflectance is the sum of regular reflectance and diffuse reflectance. For example, a wavelength of 380 nm (nanometers) to 780 nm is targeted.

  The thermal conductivity of the reflective layer 81 is not less than 0.5 W / m · K and not more than 3 W / m · K, for example. The withstand voltage of the reflective layer 81 is, for example, not less than 0.2 kV and not more than 7 kV. More preferably, it is 0.5 kV or more and 5 kV or less.

  The thickness t81 of the reflective layer 81 is, for example, not less than 20 μm and not more than 100 μm. In view of high reflectivity and difficulty in peeling, the thickness is more preferably 30 μm or more and 60 μm or less.

As described above, the heat conductive layer 82 is desirably 30 μm or more in order to ensure high thermal conductivity, and is desirably 60 μm or less in order to make it difficult to peel off. Further, as described above, the reflective layer 81 is desirably 30 μm or more in order to ensure high reflectivity, and is desirably 60 μm or less in order to make it difficult to peel off.
Therefore, the total sum of the thickness of the heat conductive layer 82 and the thickness of the reflective layer 81 is preferably 60 μm or more and 120 μm or less. Thereby, a high reflectance is obtained. Get high thermal conductivity. High insulation is obtained. Peeling can be suppressed.

  Thus, the light emitting module substrate (mounting substrate portion 15) according to the embodiment includes a metal base material (substrate 10), a heat provided on the base material and including the glass layer 82a and the second ceramic filler 82b. A conductive layer 82, a reflective layer 81 provided on the heat conductive layer 82 and including a glass layer 81a and a first ceramic filler 81b, and a wiring layer (such as the first metal layer 11) provided on the reflective layer 81 And including. The heat conductive layer 82 provides high conductivity in the substrate 10 and the heat conductive layer 82. In the reflective layer 81, high reliability and high reflectance are obtained. According to the embodiment, a decrease in efficiency due to heat can be suppressed, and high light extraction efficiency can be obtained. A substrate for a light emitting module and a light emitting module capable of improving efficiency can be provided.

  In recent years, with the increase in efficiency of LEDs, improvement in light extraction efficiency has been demanded. There is a technique for improving the total light reflectance of the substrate surface using a reflective resist. For example, an organic resist such as polyimide is used for this resist. However, the organic resist is likely to be deteriorated by heat or light.

  In the embodiment, the reflective layer 81 including the glass layer 81a and the first ceramic filler 81b is used. Thereby, deterioration by heat and light can be suppressed, and high reliability can be obtained. In the embodiment, high light extraction efficiency due to high reflectance and high reliability are provided.

  In the embodiment, the heat conductive layer 82 including the glass layer 82a and the second ceramic filler 82b having high heat conductivity is provided. Thereby, high conductivity is obtained. There is provided a light-emitting module that is less likely to reduce efficiency due to heat.

Examples of the first metal layer 11 and the second metal layer 12 will be described.
As shown in FIG. 1B, as already described, the first metal layer 11 is provided on the first main surface 10a. The first metal layer 11 includes a plurality of mounting patterns 11p. The plurality of mounting patterns 11 p are provided in the mounting area 16. At least any two of the plurality of mounting patterns 11p are separated from each other. For example, at least one of the plurality of mounting patterns 11p has an island shape. Two of the plurality of mounting patterns 11p are independent of each other. The plurality of mounting patterns 11p include, for example, a first mounting pattern 11pa and a second mounting pattern 11pb. For example, the region where the mounting pattern 11p is provided corresponds to the second region R1.

  Each of the plurality of mounting patterns 11p includes, for example, a first mounting portion 11a and a second mounting portion 11b. In this example, the mounting pattern 11p further includes a third mounting portion 11c. The third mounting portion 11c is provided between the first mounting portion 11a and the second mounting portion 11b, and connects the first mounting portion 11a and the second mounting portion 11b. Examples of these mounting parts will be described later.

The first metal layer 11 may further include a connection portion 44 that connects the plurality of mounting patterns 11p to each other. In this example, the first metal layer 11 further includes a first connector electrode portion 45e and a second connector electrode portion 46e. The first connector electrode portion 45e is electrically connected to one of the plurality of mounting patterns 11p. The second connector electrode portion 46e is electrically connected to one of the plurality of mounting patterns 11p other than the one. As will be described later, a semiconductor light emitting element is disposed on a part of one mounting pattern 11p. By this semiconductor light emitting element, the first connector electrode portion 45e is electrically connected to one of the mounting patterns 11p. Further, a semiconductor light emitting element is disposed on a part of another mounting pattern 11p. By this semiconductor light emitting element, the second connector electrode portion 46e is electrically connected to one of the other mounting patterns 11p.
In this example, the light emitting unit 40 further includes a first connector 45 and a second connector 46 provided on the first main surface 10a. The first connector 45 is electrically connected to the first connector electrode portion 45e. The second connector 46 is electrically connected to the second connector electrode portion 46e. In this example, the first connector 45 is provided on the first connector electrode portion 45e. A second connector 46 is provided on the second connector electrode portion 46e. The light emitting element portion 35 is disposed between the first connector 45 and the second connector 46. Electric power is supplied to the light emitting unit 40 via these connectors.

  As shown in FIG. 1B, the second metal layer 12 is provided on the second major surface 10b. The second metal layer 12 is electrically insulated from the first metal layer 11. At least a part of the second metal layer 12 overlaps the mounting region 16 when projected onto the XY plane (a first plane parallel to the first major surface 10a).

  Thus, the first metal layer 11 is provided on the upper surface (first main surface 10a) of the substrate 10, and the second metal layer 12 is provided on the lower surface (second main surface 10b) of the substrate 10.

  The light emitting element portion 35 is provided on the first main surface 10 a of the substrate 10. The light emitting element unit 35 includes a plurality of semiconductor light emitting elements 20 and a sealing layer 30. The upper surface 35u of the light emitting element unit 35 is, for example, a plane. A wavelength conversion layer 31 is used as the sealing layer 30.

The plurality of semiconductor light emitting elements 20 are provided on the first major surface 10a. Each of the plurality of semiconductor light emitting elements 20 emits light. The semiconductor light emitting element 20 includes, for example, a nitride semiconductor. The semiconductor light emitting element 20 includes, for example, In _y Al _x Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1). However, in the embodiment, the semiconductor light emitting element is arbitrary.

  The plurality of semiconductor light emitting elements 20 include, for example, a first semiconductor light emitting element 20a and a second semiconductor light emitting element 20b. Each of the plurality of semiconductor light emitting elements 20 is electrically connected to any one of the plurality of mounting patterns 11p and another mounting pattern 11p adjacent to any one of the plurality of mounting patterns 11p. It is connected to the.

  For example, the first semiconductor light emitting element 20a is electrically connected to the first mounting pattern 11pa and the second mounting pattern 11pb among the plurality of mounting patterns 11p. The second mounting pattern 11pb corresponds to another mounting pattern 11p adjacent to the first mounting pattern 11pa.

  For example, each of the plurality of semiconductor light emitting elements 20 includes a first semiconductor layer 21 having a first conductivity type, a second semiconductor layer 22 having a second conductivity type, and a light emitting layer 23. For example, the first conductivity type is n-type and the second conductivity type is p-type. The first conductivity type may be p-type and the second conductivity type may be n-type.

  The first semiconductor layer 21 includes a first portion (first semiconductor portion 21a) and a second portion (second semiconductor portion 21b). The second semiconductor portion 21b is aligned with the first semiconductor portion 21a in a direction (for example, the X-axis direction) intersecting with the stacking direction (Z-axis direction from the heat dissipation member 51 toward the light emitting unit 40).

The second semiconductor layer 22 is provided between the second semiconductor portion 21 b and the mounting substrate unit 15. The light emitting layer 23 is provided between the second semiconductor portion 21 b and the second semiconductor layer 22.
The semiconductor light emitting element 20 is, for example, a flip chip type LED.

  For example, the first semiconductor portion 21a of the first semiconductor layer 21 faces the first mounting portion 11a of the mounting pattern 11p. The second semiconductor layer 22 faces the second mounting portion 11b of the mounting pattern 11p. The first semiconductor portion 21a of the first semiconductor layer 21 is electrically connected to the first mounting portion 11a. The second semiconductor layer 22 is electrically connected to the second mounting portion 11b. For this connection, for example, solder or gold bumps are used. This connection is performed by, for example, metal fusion solder bonding. Alternatively, this connection is performed by, for example, an ultrasonic thermocompression method using gold bumps.

  That is, for example, the light emitting element unit 35 further includes a first bonding metal member 21e and a second bonding metal member 22e. The first bonding metal member 21e is provided between the first semiconductor portion 21a and one of the mounting patterns 11p (for example, the first mounting portion 11a). The second bonding metal member 22e is provided between the second semiconductor layer 22 and another mounting pattern 11p (for example, the second mounting pattern 11pb). At least one of the first bonding metal member 21e and the second bonding metal member 22e includes solder or gold bumps. Thereby, each cross-sectional area (cross-sectional area when cut | disconnected by an XY plane) of the 1st joining metal member 21e and the 2nd joining metal member 22e can be enlarged. Thereby, heat can be efficiently transmitted to the mounting substrate portion 15 via the first bonding metal member 21e and the second bonding metal member 22e, and heat dissipation is improved.

  The sealing layer 30 (wavelength conversion layer 31) covers at least a part of the plurality of semiconductor light emitting elements 20. The wavelength conversion layer 31 absorbs at least part of light (for example, first light) emitted from the plurality of semiconductor light emitting elements 20 and emits second light. The wavelength (for example, peak wavelength) of the second light is different from the wavelength (for example, peak wavelength) of the first light. The wavelength conversion layer 31 includes, for example, a plurality of wavelength conversion particles such as a phosphor and a light transmissive resin in which the plurality of wavelength conversion particles are dispersed. The first light includes, for example, blue light. The second light includes light having a longer wavelength than the first light. The second light includes, for example, at least one of yellow light and red light.

As the light transmissive resin of the wavelength conversion layer 31, for example, a silicone resin is used.
As the sealing layer 30, a light-transmitting inorganic material such as glass (SiO ₂ ) may be used.

In this example, the light emitting element portion 35 further includes a light reflective wall portion 32. The wall portion 32 surrounds the wavelength conversion layer 31 in the XY plane. The wall portion 32 includes, for example, a plurality of particles such as a metal oxide and a light transmissive resin in which the particles are dispersed. Particles such as metal oxides have light reflectivity. For example, at least one of TiO ₂ and Al ₂ O ₃ can be used as the particles of the metal oxide. By providing the wall portion 32, the light emitted from the semiconductor light emitting element 20 can be efficiently emitted along a direction (for example, upward direction) along the stacking direction.

  The light emitting unit 40 is, for example, a chip on board (COB) type LED module.

In the present embodiment, the luminous flux divergence of the light emitted from the light emitting element unit 35 is not less than 10 lumen / square millimeter (lm / mm ² ) and not more than 100 lumen / square millimeter. Desirably, it is 20 lumens / square millimeter or more. That is, in this embodiment, the ratio (light flux divergence) of the light emitted from the light emitting element portion 35 to the light emitting area is very high. In the present specification, the light emitting area substantially corresponds to the area of the mounting region 16.

  The light emitting device 110 according to the present embodiment is used for, for example, a projector.

  As illustrated in FIG. 1B, the light emitting device 110 is disposed on the lighting device member 71, for example. In FIG. 1A, the illumination device member 71 is omitted. The lighting device member 71 is a part of the lighting device. A lighting device connection member 53 is provided between the lighting device member 71 and the light emitting device 110. For the lighting device connecting member 53, for example, solder or grease is used. For example, the heat of the light emitting device 110 is conducted to the lighting device member 71 by the lighting device connecting member 53 to be radiated.

  FIGS. 1A and 1B also illustrate an example of a configuration of a lighting device 210 (lighting fixture) including the light-emitting device 110. The lighting device 210 includes a lighting device member 71 and a light emitting device 110. The light emitting device 110 is provided on the lighting device member 71. The lighting device 210 may further include a lighting device connection member 53. The lighting device connecting member 53 is provided between the lighting device member 71 and the light emitting device 110, and is in contact with the heat radiating member 51 of the light emitting device 110 and the lighting device member 71. The lighting device connection member 53 may be included in the light emitting device 110.

  In the light emitting device 110 according to the present embodiment, when the heat dissipation member 51 is projected onto the XY plane (first plane), the heat dissipation member 51 has an area that is five times or more the area of the mounting region 16.

  That is, in the present embodiment, the area of the heat dissipation member 51 is set to be very large with respect to the area of the mounting region 16. Thereby, the heat generated in the light emitting element portion 35 provided on the mounting region 16 is spread in the in-plane direction (XY in-plane direction) by the heat radiating member 51 having a large area. And the heat which spread in the in-plane direction is transmitted toward the illuminating device member 71 to which the light-emitting device 110 is attached, for example, and is thermally radiated efficiently.

Examples of the mounting region 16, the first metal layer 11, and the second metal layer 12 will be described.
As illustrated in FIG. 2A, the first main surface 10 a includes a mounting region 16 and a peripheral region 17. In this example, the pattern of the mounting area 16 is substantially circular. The center of the mounting region 16 is provided so as to substantially coincide with the center of the substrate 10. The peripheral area 17 is an area around the mounting area 16.

  The area of the peripheral region 17 is larger than the area of the mounting region 16. The area of the peripheral region 17 is four times or more the area of the mounting region 16. The area of the peripheral region 17 is preferably 9 times or less the area of the mounting region 16.

  For example, the end of the first main surface 10a (outer edge 10r) along one direction (for example, the X-axis direction) parallel to the first main surface 10a and passing through the center of the mounting region 16 and the mounting region 16 The distance between them (shortest distance) is not less than ½ of the width of the mounting region 16 along the direction passing through the center (X-axis direction). For example, the distance 17xa (shortest distance) between the outer edge 10r along the X-axis direction and the mounting region 16 is ½ or more of the width 16x of the mounting region 16. For example, the distance 17xb (shortest distance) between the outer edge 10r along the X-axis direction and the mounting region 16 is ½ or more of the width 16x of the mounting region 16. For example, the distance 17ya (shortest distance) between the outer edge 10r along the Y-axis direction and the mounting region 16 is ½ or more of the width 16y of the mounting region 16. For example, the distance 17 yb (shortest distance) between the outer edge 10 r along the Y-axis direction and the mounting region 16 is ½ or more of the width 16 y of the mounting region 16.

  Thereby, the area of the peripheral region 17 becomes larger than the area of the mounting region 16. By making the area of the peripheral region 17 larger than the area of the mounting region 16 where heat is generated, the generated heat is efficiently spread along the in-plane direction. Thereby, heat dissipation increases.

  As illustrated in FIG. 2B, the plurality of mounting patterns 11 p that are part of the first metal layer 11 are provided in the mounting region 16. In this example, the plurality of mounting patterns 11p are provided in a circular area. In other words, the region where the plurality of mounting patterns 11 p are provided is the mounting region 16. The mounting area 16 is an area that includes a plurality of mounting patterns 11p when projected onto the XY plane. A region between the plurality of mounting patterns 11 p is included in the mounting region 16. The inner side of the line connecting the outer edges of the mounting patterns 11p arranged on the outer side among the plurality of mounting patterns 11p is the mounting region 16.

  As shown in FIG. 2B, in order to increase the luminous flux divergence, the plurality of mounting patterns 11p are arranged, for example, in a substantially circular region. In this case, a substantially circular area containing a plurality of mounting patterns 11p may be practically used as the mounting area 16.

  The mounting region 16 includes a region where a plurality of mounting patterns 11p are provided when projected onto the XY plane. The mounting region 16 does not include a region where the connection portion 44, the first connector electrode portion 45e, and the second connector electrode portion 46e are provided when projected onto the XY plane. This area is included in the peripheral area 17.

  As already described, as illustrated in FIG. 2B, some of the plurality of mounting patterns 11p are independent of each other. Two independent mounting patterns 11p adjacent to each other are electrically connected by a semiconductor light emitting element 20 disposed thereon. Some of the plurality of semiconductor light emitting elements 20 are connected in series, for example. The plurality of semiconductor light emitting elements 20 connected in series are arranged, for example, along the X-axis direction.

  Further, for example, two of the plurality of mounting patterns 11p are connected by the connecting portion 44. Thereby, the group of the several semiconductor light emitting element 20 connected in series is further connected. A group of a plurality of semiconductor light emitting elements arranged in series along the X axis are arranged in the Y axis direction. A group of a plurality of semiconductor light emitting elements connected in series are connected in parallel to each other.

  Further, the mounting pattern 11p is electrically connected to the first connector electrode portion 45e or the second connector electrode portion 46e via the wiring pattern 44c. A current is supplied to the mounting pattern 11p via the first connector 45 provided on the first connector electrode portion 45e and the second connector 46 provided on the second connector electrode portion 46e. The The current is supplied to the semiconductor light emitting element 20, and light is generated.

  As shown in FIG. 2C, the area of the second metal layer 12 is designed to be large. The area of the second metal layer 12 is larger than the area of the mounting region 16. For example, the area of the second metal layer 12 projected onto the XY plane (a first plane parallel to the stacking direction) is 95% or more of the area of the second major surface 10b. Increasing the area of the second metal layer 12 increases the efficiency of heat dissipation.

  The planar pattern of the heat conducting member 52 is substantially along the pattern of the second metal layer 12. By increasing the area of the second metal layer 12, the area of the heat conducting member 52 can be increased. Thereby, the efficiency of heat conduction through the heat conducting member 52 can be improved.

  For example, the outer edge 12r of the second metal layer 12 when projected onto the XY plane (first plane) is located outside the outer edge 16r of the mounting region 16.

  The area of the second metal layer 12 when projected onto the XY plane (first plane) may be smaller than the area of the mounting region 16. Even in this case, the area of the second metal layer 12 when projected onto the XY plane (first plane) is larger than 80% of the area of the mounting region 16. If it is smaller than this, the efficiency of heat dissipation becomes low.

FIG. 4 is a schematic cross-sectional view illustrating the light emitting device according to the first embodiment.
FIG. 4 illustrates a part of the light emitting unit 40.

As shown in FIG. 4, the first metal layer 11 includes a copper layer 13a (Cu layer). The first metal layer 11 may further include a gold layer 13d (Au layer). The copper layer 13 a is provided between the gold layer 13 d and the substrate 10. In this example, the first metal layer 11 includes a nickel layer 13b (Ni layer) provided between the copper layer 13a and the gold layer 13d, and a palladium layer 13c provided between the nickel layer 13b and the gold layer 13d. (Pd layer). Thus, in this example, the first metal layer 11 has a laminated structure of Cu / Ni / Pd / Au.
For the first metal layer 11, for example, an alloy material containing at least one of Ag, Au, Rh, and Al may be used. Thereby, the reflectance of the first metal layer 11 is improved.

  On the other hand, the second metal layer 12 includes a copper layer 14a. The second metal layer 12 may further include a gold layer 14d. The copper layer 14 a is provided between the gold layer 14 d and the substrate 10. In this example, the second metal layer 12 includes a nickel layer 14b provided between the copper layer 14a and the gold layer 14d, and a palladium layer 14c provided between the nickel layer 14b and the gold layer 14d. Contains. Thus, in this example, the second metal layer 12 has a stacked structure of Cu / Ni / Pd / Au.

  In the above, the boundary between each of a copper layer, a nickel layer, a palladium layer, and a gold layer may not be clear. Some of these layers may have a mixed state (for example, an alloy state).

  For example, the same material as that of the first metal layer 11 can be used for the second metal layer 12. For the second metal layer 12, the same stacked structure as the stacked structure of the first metal layer 11 can be applied. Thereby, formation of these metal layers becomes easy. In the embodiment, the configuration of the second metal layer 12 may be different from the configuration of the first metal layer 11.

  The thickness t11 of the first metal layer 11 is, for example, 30 μm or more and 100 μm or less, for example, 40 μm or more and 60 μm or less. The thickness t12 of the second metal layer 12 is, for example, 30 μm or more and 100 μm or less, for example, 40 μm or more and 60 μm or less.

  The copper layer 13a of the first metal layer 11 and the copper layer 14a of the second metal layer 12 can be formed by electrolytic plating, for example. Each of the thickness of the copper layer 13a and the thickness of the copper layer 14a is, for example, 30 μm or more and 100 μm or less, for example, about 50 μm.

  The nickel layer 13b, the palladium layer 13c, and the gold layer 13d are formed by, for example, electroless plating. The nickel layer 14b, the palladium layer 14c, and the gold layer 14d are formed by, for example, electrolytic plating.

  Each of the thickness of the nickel layer 13b and the thickness of the nickel layer 14b is, for example, not less than 2 μm and not more than 8 μm, for example, about 4.5 μm. Each of the thickness of the palladium layer 13c and the thickness of the palladium layer 14c is, for example, not less than 0.075 μm and not more than 0.2 μm, for example, about 1 μm. Each of the thickness of the gold layer 13d and the thickness of the gold layer 14d is, for example, 0.05 μm or more and 0.2 μm or less, for example, about 0.1 μm.

  By forming at least part of the first metal layer 11 and at least part of the second metal layer 12 by electroless plating, the side surface of the first metal layer 11 and the side surface of the second metal layer 12 are Can be substantially vertical.

  For example, the side surface 11s of the first metal layer 11 when cut along a plane perpendicular to the first main surface 10a (for example, a second plane such as a YZ plane) is in the stacking direction (Z-axis direction). Can be made almost parallel. The angle θ between the side surface 11s of the first metal layer 11 and the first main surface 10a is, for example, not less than 80 degrees and not more than 95 degrees. For example, the angle θ is more preferably 85 degrees or more.

  If the angle θ is small, the area of the lower surface of the mounting pattern 11p is excessive with respect to the area for mounting the mounting pattern 11p that is a part of the first metal layer 11 (for example, the area of the upper surface). It gets bigger. For this reason, the ratio of the part covered with the mounting pattern 11p among the upper surfaces (the 1st main surface 10a) of the board | substrate 10 becomes high. For this reason, it becomes difficult to increase the reflectivity of the entire mounting region 16.

  Mounting on the upper surface (first main surface 10a) of the substrate 10 by setting the angle θ between the side surface 11s of the first metal layer 11 and the first main surface 10a to 80 degrees or more and 95 degrees or less. The ratio of the portion covered with the pattern 11p can be reduced. Thereby, the reflectance as the whole mounting region 16 can be made sufficiently high. Thereby, the luminous flux divergence can be improved.

  The curvature of the corner portion of the cross section of the first metal layer 11 is relatively high. That is, the radius of curvature is small. The cross section of the first metal layer 11 is close to a rectangle, that is, the side surface 11s is close to vertical. For example, the first metal layer 11 further includes an upper surface 11u parallel to the XY plane (first plane). The radius of curvature of the corner portion 11su that connects the upper surface 11u of the first metal layer 11 and the side surface 11s of the first metal layer 11 is 10 μm or less. Thereby, the area of the lower surface of the mounting pattern 11p can be made smaller than the area for mounting the mounting pattern 11p (for example, the area of the upper surface 11u of the mounting pattern 11p). Thereby, the reflectance as the whole mounting area | region 16 can be made high, and luminous flux divergence can be improved.

  In this example, a part of the wavelength conversion layer 31 is disposed at a position 11 g (space) between any one of the plurality of semiconductor light emitting elements 20 and the substrate 10. The position 11g is a position between any one of the mounting patterns 11p (for example, the first mounting pattern 11pa) and another mounting pattern 11p (for example, the second mounting pattern 11pb). By arranging a part of the wavelength conversion layer 31 also at this position 11g (space), the first light emitted from the semiconductor light emitting element 20 can be efficiently converted into the second light by the wavelength conversion layer 31. In the position 11g (space), a wavelength conversion member containing a transparent resin or another phosphor material may be separately arranged.

  In order to arrange a part of the wavelength conversion layer 31 at the position 11g (space), a space including the position 11g may be enlarged. For example, the gap between the semiconductor light emitting element 20 and the substrate 10 is increased. For example, the distance tg between any of the plurality of semiconductor light emitting elements 20 and the substrate 10 along the Z-axis direction (the stacking direction from the heat dissipation member 51 to the light emitting unit 40) is set to be relatively long. For example, the distance tg is 1/10 or more of the thickness t20 (height) along the Z-axis direction of the plurality of semiconductor light emitting elements 20.

  For example, the height of the semiconductor light emitting element 20 (thickness t20 along the Z-axis direction) is, for example, not less than 50 μm and not more than 500 μm, for example, 300 μm. The distance tg is, for example, not less than 40 μm and not more than 110 μm, for example, 60 μm. By increasing the thickness t11 of the first metal layer 11, the distance tg can be increased.

  In the embodiment, the thickness t10 of the substrate 10 is, for example, not less than 0.3 mm and not more than 2 mm, for example, 0.635 mm. If the thickness t10 of the substrate 10 is less than 0.3 mm, for example, the mechanical strength of the substrate 10 becomes weak. When the thickness t10 of the substrate 10 exceeds 2 mm, for example, the efficiency of conduction of heat generated in the semiconductor light emitting element 20 (light emitting element portion 35) to the heat radiating member 51 becomes low.

  As illustrated in FIG. 4, the wavelength conversion layer 31 includes a plurality of wavelength conversion particles 31 a such as a phosphor, and a light transmissive resin 31 b in which the plurality of wavelength conversion particles 31 a are dispersed. The wavelength conversion particle 31a absorbs at least a part of the first light emitted from the plurality of semiconductor light emitting elements 20, and emits second light having a wavelength different from the wavelength of the first light.

  The light emitting device according to each of the above embodiments can be used as an illumination device such as a projector.

In the above embodiment, a light-transmitting inorganic material such as glass (SiO ₂ ) may be used as the sealing layer 30. When glass is used for the sealing layer 30, the reflective layer 81 also has glass as a main component, so that the difference in coefficient of thermal expansion can be reduced and adhesion can be improved.

(Second Embodiment)
FIG. 5 is a schematic cross-sectional view illustrating the light emitting device according to the second embodiment.
FIG. 5 illustrates a portion corresponding to a part of the cross section along line B1-B2 of FIG.
As shown in FIG. 5, the mounting substrate portion (light emitting module substrate 15) according to the present embodiment includes a metal base (substrate 10), an insulating layer 80 provided on the base, and an insulating layer 80. And a wiring layer (first metal layer 11) provided on the substrate.

  The insulating layer 80 includes a first region 81r and a second region 82r provided between the first region 81r and the base material. In this example, the insulating layer 80 further includes a third region 83r. The third region 83r is provided between the first region 81r and the second region 82r.

  The first region 81r includes a plurality of first microstructures 81xa and silicon oxide 81xs.

  The second region 82r includes a plurality of second microstructures 82xa and silicon oxide 82xs. The thermal conductivity of the second microstructure 82xa is higher than that of the first microstructure 81xa.

  For example, the first microstructure 81a includes zirconium oxide. The first microstructure 81a may contain aluminum oxide.

  For example, the second microstructure 82a includes aluminum nitride.

  For example, the first region 81 r is at least a part of the reflective layer 81. The first microstructure 81xa corresponds to the second ceramic filler 81b. The silicon oxide 81xs corresponds to the glass layer 81a.

  For example, the second region 82r is at least a part of the heat conductive layer 82. The second microstructure 82xa corresponds to the first ceramic filler 81a. The silicon oxide 82xs corresponds to the glass layer 82a.

  The reflectance of the first region 81r is higher than the reflectance of the second region 82r. The thermal conductivity of the second region 82r is higher than the thermal conductivity of the first region 81r.

  The thermal conductivity of the first region 81r is, for example, not less than 0.5 W / m · K and not more than 3 W / m · K. The thermal conductivity of the second region 82r is, for example, 2 W / m · K or more and 7 W / m · K or less.

  The third region 83r includes a first microstructure 81xa, a second microstructure 82xa, and silicon oxide 83xs. The third region 83r is a mixed region including the first microstructure 81xa and the second microstructure 82xa.

  In the embodiment, the third region 83r may not be provided. That is, the second region 82r may be in contact with the first region 81r.

  For example, the main component of the first region 81r is silicon oxide. The main component of the second region 82r is silicon oxide. The main component of the third region 83r is silicon oxide.

  Since the configuration other than the above is the same as that of the mounting substrate portion according to the first embodiment, the description thereof is omitted.

  The particle diameter of the first microstructure 81xa is, for example, 0.7 μm or more and 2 μm (for example, about 1 μm). The first fine structure 81xa is, for example, spherical. The particle size of the second microstructure is, for example, not less than 0.2 μm and not more than 1 μm (for example, about 0.7 μm). The second microstructure is, for example, spherical.

  For example, the thickness of the first region 81r is, for example, not less than 30 μm and not more than 60 μm (for example, about 45 μm). The thickness of the second region 82r is, for example, 30 μm or more and 60 μm or less (for example, about 45 μm). The thickness of the third region 83r is about 5 μm or more and 20 μm or less (for example, about 10 μm or less).

FIG. 6A and FIG. 6B are graphs illustrating the light emitting module substrate according to the embodiment.
FIG. 6A illustrates the concentration of the first microstructure 81xa82xa in the first region 81r, the second region 82r, and the third region 83r.
FIG. 6B illustrates the concentration of the second microstructure 82xa in the first region 81r, the second region 82r, and the third region 83r.

  The horizontal axis in these figures is the position in the Z-axis direction. The vertical axis in FIG. 6A is the concentration C1 (relative value) of the first microstructure 81a. The vertical axis in FIG. 6B is the concentration C2 (relative value) of the second microstructure 82xa.

  In the mounting substrate section 15 according to the present embodiment, the mutual interfaces of the first region 81, the second region 82r, and the third region 83r may or may not be observed. If the interface is not substantially clearly provided, the insulating layer 80 is substantially integral. For example, the silicon oxide 81xs in the first region 81r and the silicon oxide 83xs in the third region 83r are integrated. The silicon oxide 82xs in the second region 82r and the silicon oxide 83xs in the third region 83r are integrated. Thereby, it is suppressed that these area | regions peel by thermal stress etc. When the third region 83r is not provided, the first region 81r and the second region 82r are integrated. The first region 81r and the second region 82r are prevented from being separated due to thermal stress or the like.

  High conductivity is obtained in the second region 82r. In the first region 81r, high reliability and high reflectance are obtained. The average value of the total light reflectance of the first region 81r is, for example, 92% or more. According to the embodiment, a decrease in efficiency due to heat can be suppressed, and high light extraction efficiency can be obtained. A substrate for a light emitting module capable of improving efficiency can be provided.

  In the embodiment, for example, the thermal expansion coefficient of the reflective layer 81 (for example, the first region 81r) is equal to or less than the thermal expansion coefficient of the heat conductive layer 82 (for example, the second region 82r). The thermal expansion coefficient of the heat conductive layer 82 is less than the thermal expansion coefficient of the substrate 10. For example, the thermal expansion coefficients (thermal expansion coefficients) of the substrate 10, the reflective layer 81, and the thermal conductive layer 82 satisfy the relationship of reflective layer 81 ≦ thermal conductive layer 82 <substrate 10. This relationship is satisfied, for example, under a condition below the temperature at which the light emitting device 110 is turned on.

  In the embodiment, the compressive stress for the heat conductive layer 82 (for example, the second region 82r) of the reflective layer 81 (for example, the first region 81r) is equal to or greater than the compressive stress for the reflective layer 81 of the heat conductive layer 82. For example, the reflective layer 81 receives compressive stress. This compressive stress is, for example, stress from the substrate 10. The heat conductive layer 82 receives a compressive stress. This compressive stress is, for example, stress from the reflective layer 81. The stress suppresses cracks in the heat conductive layer 82.

  For example, the reflective layer 81 includes at least one of silicon nitride and aluminum nitride. On the other hand, a metal is used as the substrate 10. Thereby, the thermal expansion coefficient of the reflective layer 81 is lower than the thermal expansion coefficient of the substrate 10. For example, the heat conductive layer 82 includes, for example, at least one of silicon nitride and aluminum nitride. Thereby, the thermal expansion coefficient of the heat conductive layer 82 becomes lower than the thermal expansion coefficient of the substrate 10.

  The mounting substrate unit according to the present embodiment can be applied to the light emitting device 110 (light emitting module) and the lighting device 210 (illuminating device) described in regard to the first embodiment.

  According to the embodiment, a substrate for a light emitting module, a light emitting module, and a lighting fixture that can improve efficiency are provided.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

  The embodiments of the present invention have been described above with reference to specific examples. However, embodiments of the present invention are not limited to these specific examples. For example, a light emitting part, a mounting substrate part, a light emitting element part, a substrate, a first metal layer, a second metal layer, a semiconductor light emitting element, a wavelength conversion layer, a wall part, a heat radiating member, a heat conductive layer, a reflective layer included in the light emitting device In addition, regarding the specific configuration of each element such as the heat conduction layer, and the lighting device member included in the lighting device, those skilled in the art can implement the present invention in the same manner by selecting appropriately from a known range, and the same effect Is included in the scope of the present invention.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, based on the light emitting module substrate, the light emitting module, and the lighting fixture described above as the embodiment of the present invention, all the light emitting module substrates, light emitting modules, and lighting fixtures that can be appropriately modified by a person skilled in the art are also available. As long as the gist of the present invention is included, it belongs to the scope of the present invention.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

Claims (11)

A metal substrate;
An insulating layer provided on the substrate;
A wiring layer provided on the insulating layer;
With
The insulating layer includes a first region, a second region provided between the first region and the base material,
The first region includes a plurality of first microstructures and silicon oxide,
The second region is a light emitting module substrate including a plurality of second microstructures having a thermal conductivity higher than a theoretical conductivity of the first microstructure and silicon oxide. The insulating layer further includes a third region provided between the first region and the second region,
The light emitting module substrate according to claim 1, wherein the third region includes the first microstructure, the second microstructure, and silicon oxide. The reflectance of the first region is higher than the reflectance of the second region,
The light emitting module substrate according to claim 1 or 2, wherein the thermal conductivity of the second region is higher than the thermal conductivity of the first region.   The first region has a thermal conductivity of 0.5 W / m · K to 3 W / m · K, and the second region has a thermal conductivity of 2 W / m · K to 7 W / m · K. The light emitting module substrate according to claim 1 or 2.   The light emitting module substrate according to claim 1, wherein the first microstructure includes at least one of aluminum oxide and zirconium oxide.   The light emitting module substrate according to claim 1, wherein the second microstructure includes aluminum nitride.   The light emitting module substrate according to claim 1, wherein an average value of total light reflectance in the first region is 92% or more.   The thermal expansion coefficient of the base material is lower than the thermal expansion coefficient of the second region, and the thermal expansion coefficient of the second region is less than or equal to the thermal expansion coefficient of the first region. A substrate for a light emitting module according to 1.   The light emitting module substrate according to claim 1, wherein a compressive stress of the first region with respect to the second region is equal to or greater than a compressive stress of the second region with respect to the first region. A substrate for a light emitting module according to any one of claims 1 to 9,
A light emitting element electrically connected to the wiring layer;
Light emitting module equipped with. The light emitting module according to claim 10;
A lighting device member on which the light emitting module is mounted;
Lighting equipment with

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