JP6150050B2 - Light emitting device and lighting device - Google Patents

Description

  Embodiments described herein relate generally to a light emitting device and a lighting device.

  For example, there is a light emitting device that emits white light by combining a semiconductor light emitting element that emits blue light and a phosphor that converts the wavelength of light. Such a light emitting device can be applied to an illumination device such as a projector. In such applications, the amount of light per unit area is high. In such a light emitting device, it is necessary to improve heat dissipation.

JP 2012-84733 A

  Embodiments of the present invention provide a light emitting device and a lighting device with improved heat dissipation.

According to the embodiment of the present invention, a light emitting device including a light emitting unit, a heat radiating member, and a heat conductive layer is provided. The light emitting unit includes a mounting substrate unit and a light emitting element unit. The mounting substrate unit includes a substrate, a first metal layer, and a second metal layer. The substrate has a first main surface including a mounting region and a second main surface opposite to the first main surface, and is insulative. The first metal layer is provided on the first main surface. The first metal layer includes a plurality of mounting patterns provided in the mounting region. The second metal layer is provided on the second main surface and is electrically insulated from the first metal layer. At least a part of the second metal layer overlaps the mounting region when projected onto a first plane parallel to the first main surface. The light emitting element unit includes a plurality of semiconductor light emitting elements and a wavelength conversion layer. The plurality of semiconductor light emitting elements are provided on the first main surface. Each of the plurality of semiconductor light emitting elements is electrically connected to any one of the plurality of mounting patterns, the other mounting pattern adjacent to any one of the plurality of mounting patterns, and Connected. The wavelength conversion layer covers at least a part of the plurality of semiconductor light emitting elements, absorbs at least a part of the first light emitted from the plurality of semiconductor light emitting elements, and has a wavelength different from the wavelength of the first light. Two lights are emitted. The luminous emittance of the light emitted from the light emitting element section is 10 lm / mm ² or more 100lm / mm ² or less. The heat dissipation member faces the second main surface. The heat dissipation member has an area that is five times or more the area of the mounting region when projected onto the first plane. The heat conductive layer is provided between the heat dissipation member and the second metal layer.

  According to the embodiment of the present invention, a light emitting device and a lighting device with improved heat dissipation are provided.

FIG. 1A and FIG. 1B are schematic views illustrating the light emitting device and the lighting device according to the first embodiment. 2A to 2C are schematic plan views illustrating the light emitting device according to the first embodiment. It is a graph which illustrates the light-emitting device concerning a 1st embodiment. FIG. 4A and FIG. 4B are schematic plan views illustrating the light emitting device according to the first embodiment. 1 is a schematic cross-sectional view illustrating a light emitting device according to a first embodiment. 1 is a schematic cross-sectional view illustrating a light emitting device according to a first embodiment. FIG. 5 is a schematic cross-sectional view illustrating another light emitting device according to the first embodiment. FIG. 9 is a schematic cross-sectional view illustrating a light emitting device and a lighting device according to a fifth embodiment. FIG. 9A and FIG. 9B are schematic views illustrating the light emitting device and the lighting device according to the fifth embodiment. FIG. 10A to FIG. 10D are schematic cross-sectional views illustrating another light emitting device and lighting device according to the fifth embodiment. FIG. 11A and FIG. 11B are schematic views illustrating a light emitting device and a lighting device according to the fifth embodiment. It is a graph which illustrates the characteristic of the light-emitting device and illuminating device which concern on 5th Embodiment. FIG. 13A to FIG. 13F are schematic cross-sectional views illustrating a light emitting device and a lighting device according to the sixth embodiment. FIG. 14A to FIG. 14G are schematic cross-sectional views illustrating the light emitting device according to the sixth embodiment. FIG. 15A to FIG. 15G are schematic cross-sectional views illustrating the light emitting device according to the sixth embodiment. FIG. 10 is a schematic cross-sectional view illustrating a light emitting device and a lighting device according to a seventh embodiment. FIG. 17A to FIG. 17C are schematic cross-sectional views illustrating another light emitting device and lighting device according to the seventh embodiment. FIG. 18A to FIG. 18C are schematic cross-sectional views illustrating another light emitting device and lighting device according to the seventh embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A and FIG. 1B are schematic views illustrating the light emitting device and the lighting device according to the first embodiment.
FIG. 1A is a plan view. FIG. 1B is a cross-sectional view illustrating a part of a cross section taken along line A1-A2 of FIG.
As shown in FIG. 1A and FIG. 1B, the light emitting device 110 according to the present embodiment includes a light emitting unit 40, a heat radiating member 51, and a heat conductive layer 52.

  The light emitting unit 40 is provided on the heat dissipation member 51. A heat conductive layer 52 is provided between the heat dissipation member 51 and the light emitting unit 40.

  That is, the heat conductive layer 52 is provided on the heat radiating member 51, and the light emitting unit 40 is provided on the heat conductive layer 52. In this example, one light emitting unit 40 is provided on the heat dissipation member 51. As will be described later, a plurality of light emitting units 40 may be provided on one heat radiating member 51.

  In the present specification, the state provided above includes not only the state provided directly above but also the state where another element is inserted therebetween.

  A direction from the heat radiating member 51 toward the light emitting unit 40 is defined as a stacking direction. In the present specification, the state of being stacked includes not only the state of being stacked in direct contact but also the state of being stacked with another element inserted therebetween.

  The stacking direction is the Z-axis direction. One axis perpendicular to the Z-axis direction is taken as the X-axis direction. A direction perpendicular to the Z-axis direction and perpendicular to the X-axis direction is taken as a Y-axis direction.

  The heat dissipating member 51 has a plate shape, for example. The main surface of the heat radiating member 51 is substantially parallel to the XY plane, for example. The planar shape of the heat dissipation member 51 is, for example, a rectangle. The heat radiating member 51 has, for example, first to fourth sides 55a to 55d. The second side 55b is separated from the first side 55a. The third side 55c connects one end of the first side 55a and one end of the second side 55b. The fourth side 55d is separated from the third side 55c, and connects the other end of the first side 55a and the other end of the second side 55b. The planar corner portion of the heat radiating member 51 may be curved. The planar shape of the heat dissipating member 51 does not have to be rectangular and is arbitrary.

  For example, a metal substrate is used for the heat dissipation member 51. For the heat radiating member 51, for example, copper or aluminum is used.

  The light emitting unit 40 emits light. At the same time, the light emitting unit 40 generates heat. The heat conductive layer 52 efficiently conducts heat generated in the light emitting unit 40 to the heat radiating member 51. For the heat conductive layer 52, for example, solder or the like is used. That is, the heat conductive layer 52 includes solder. In this case, the heat conductive layer 52 joins the light emitting unit 40 and the heat dissipation member 51. For example, the AuSn alloy etc. are used for the heat conductive layer 52, for example.

  The heat conductive layer 52 may be liquid or solid lubricating oil (grease). For the heat conduction layer 52, in order to further increase the heat conductivity than the lubricating oil (grease), a conductive lubricating oil (conductive grease) in which a metal powder such as alumina is mixed with silicone may be used. .

  The light emitting unit 40 includes a mounting substrate unit 15 and a light emitting element unit 35.

  The mounting substrate unit 15 includes a substrate 10, a first metal layer 11, and a second metal layer 12.

  The substrate 10 has a first main surface 10a and a second main surface 10b. The 2nd main surface 10b is a surface on the opposite side to the 1st main surface 10a. The heat dissipating member 51 faces the second main surface of the substrate 10. In other words, the second main surface 10b is a surface on the heat radiating member 51 side.

  In the present specification, the state of facing each other includes not only the state of directly facing but also the state of inserting another element therebetween.

  The first major surface 10 a includes a mounting area 16. For example, the mounting region 16 is separated from the outer edge 10r of the first main surface 10a. In this example, the mounting region 16 is provided in the central portion of the first main surface 10a. The first major surface 10a further includes a peripheral region 17. The peripheral area 17 is provided around the mounting area 16. An example of the mounting area 16 will be described later.

  The substrate 10 is insulative. For the substrate 10, for example, a ceramic substrate or the like is used. For example, the substrate 10 includes alumina. As the substrate 10, a ceramic substrate mainly composed of alumina is used.

  The first metal layer 11 is provided on the first major surface 10a. The first metal layer 11 includes a plurality of mounting patterns 11p. The plurality of mounting patterns 11 p are provided in the mounting area 16. At least any two of the plurality of mounting patterns 11p are separated from each other. For example, at least one of the plurality of mounting patterns 11p has an island shape. Two of the plurality of mounting patterns 11p are independent of each other. The plurality of mounting patterns 11p include, for example, a first mounting pattern 11pa and a second mounting pattern 11pb.

  Each of the plurality of mounting patterns 11p includes, for example, a first mounting portion 11a and a second mounting portion 11b. In this example, the mounting pattern 11p further includes a third mounting portion 11c. The third mounting portion 11c is provided between the first mounting portion 11a and the second mounting portion 11b, and connects the first mounting portion 11a and the second mounting portion 11b. Examples of these mounting parts will be described later.

The first metal layer 11 may further include a connection portion 44 that connects the plurality of mounting patterns 11p to each other. In this example, the first metal layer 11 further includes a first connector electrode portion 45e and a second connector electrode portion 46e. The first connector electrode portion 45e is electrically connected to one of the plurality of mounting patterns 11p. The second connector electrode portion 46e is electrically connected to one of the plurality of mounting patterns 11p other than the one. As will be described later, a semiconductor light emitting element is disposed on a part of one mounting pattern 11p. By this semiconductor light emitting element, the first connector electrode portion 45e is electrically connected to one of the mounting patterns 11p. Further, a semiconductor light emitting element is disposed on a part of another mounting pattern 11p. By this semiconductor light emitting element, the second connector electrode portion 46e is electrically connected to one of the other mounting patterns 11p.
An example of the first metal layer 11 will be described later.

  In this example, the light emitting unit 40 further includes a first connector 45 and a second connector 46 provided on the first main surface 10a. The first connector 45 is electrically connected to the first connector electrode portion 45e. The second connector 46 is electrically connected to the second connector electrode portion 46e. In this example, the first connector 45 is provided on the first connector electrode portion 45e. A second connector 46 is provided on the second connector electrode portion 46e. The light emitting element portion 35 is disposed between the first connector 45 and the second connector 46. Electric power is supplied to the light emitting unit 40 via these connectors.

  The second metal layer 12 is provided on the second major surface 10b. The second metal layer 12 is electrically insulated from the first metal layer 11. At least a part of the second metal layer 12 overlaps the mounting region 16 when projected onto the XY plane (a first plane parallel to the first major surface 10a).

  Thus, the first metal layer 11 is provided on the upper surface (first main surface 10a) of the substrate 10, and the second metal layer 12 is provided on the lower surface (second main surface 10b) of the substrate 10.

  The light emitting element portion 35 is provided on the first main surface 10 a of the substrate 10. The light emitting element unit 35 includes a plurality of semiconductor light emitting elements 20 and a wavelength conversion layer 31.

The plurality of semiconductor light emitting elements 20 are provided on the first major surface 10a. Each of the plurality of semiconductor light emitting elements 20 emits light. The semiconductor light emitting element 20 includes, for example, a nitride semiconductor. The semiconductor light emitting element 20 includes, for example, In _y Al _z Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1). However, in the embodiment, the semiconductor light emitting element is arbitrary.

  The plurality of semiconductor light emitting elements 20 include, for example, a first semiconductor light emitting element 20a and a second semiconductor light emitting element 20b. Each of the plurality of semiconductor light emitting elements 20 is electrically connected to any one of the plurality of mounting patterns 11p and another mounting pattern 11p adjacent to any one of the plurality of mounting patterns 11p. It is connected to the.

  For example, the first semiconductor light emitting element 20a is electrically connected to the first mounting pattern 11pa and the second mounting pattern 11pb among the plurality of mounting patterns 11p. The second mounting pattern 11pb corresponds to another mounting pattern 11p adjacent to the first mounting pattern 11pa.

  For example, each of the plurality of semiconductor light emitting elements 20 includes a first semiconductor layer 21 having a first conductivity type, a second semiconductor layer 22 having a second conductivity type, and a light emitting layer 23. For example, the first conductivity type is n-type and the second conductivity type is p-type. The first conductivity type may be p-type and the second conductivity type may be n-type.

  The first semiconductor layer 21 includes a first portion (first semiconductor portion 21a) and a second portion (second semiconductor portion 21b). The second semiconductor portion 21b is aligned with the first semiconductor portion 21a in a direction (for example, the X-axis direction) intersecting with the stacking direction (Z-axis direction from the heat dissipation member 51 toward the light emitting unit 40).

The second semiconductor layer 22 is provided between the second semiconductor portion 21 b and the mounting substrate unit 15. The light emitting layer 23 is provided between the second semiconductor portion 21 b and the second semiconductor layer 22.
The semiconductor light emitting element 20 is, for example, a flip chip type LED.

  For example, the first semiconductor portion 21a of the first semiconductor layer 21 faces the first mounting portion 11a of the mounting pattern 11p. The second semiconductor layer 22 faces the second mounting portion 11b of the mounting pattern 11p. The first semiconductor portion 21a of the first semiconductor layer 21 is electrically connected to the first mounting portion 11a. The second semiconductor layer 22 is electrically connected to the second mounting portion 11b. For this connection, for example, solder or gold bumps are used. This connection is performed by, for example, metal fusion solder bonding. Alternatively, this connection is performed by, for example, an ultrasonic thermocompression method using gold bumps.

  That is, for example, the light emitting element unit 35 further includes a first bonding metal member 21e and a second bonding metal member 22e. The first bonding metal member 21e is provided between the first semiconductor portion 21a and one of the mounting patterns 11p (for example, the first mounting portion 11a). The second bonding metal member 22e is provided between the second semiconductor layer 22 and another mounting pattern 11p (for example, the second mounting pattern 11pb). At least one of the first bonding metal member 21e and the second bonding metal member 22e includes solder or gold bumps. Thereby, each cross-sectional area (cross-sectional area when cut | disconnected by an XY plane) of the 1st joining metal member 21e and the 2nd joining metal member 22e can be enlarged. Thereby, heat can be efficiently transmitted to the mounting substrate portion 15 via the first bonding metal member 21e and the second bonding metal member 22e, and heat dissipation is improved.

  The wavelength conversion layer 31 covers at least a part of the plurality of semiconductor light emitting elements 20. The wavelength conversion layer 31 absorbs at least part of light (for example, first light) emitted from the plurality of semiconductor light emitting elements 20 and emits second light. The wavelength (for example, peak wavelength) of the second light is different from the wavelength (for example, peak wavelength) of the first light. The wavelength conversion layer 31 includes, for example, a plurality of wavelength conversion particles such as a phosphor and a light transmissive resin in which the plurality of wavelength conversion particles are dispersed. The first light includes, for example, blue light. The second light includes light having a longer wavelength than the first light. The second light includes, for example, at least one of yellow light and red light.

In this example, the light emitting element unit 35 further includes a reflective layer 32. The reflective layer 32 surrounds the wavelength conversion layer 31 in the XY plane. The reflective layer 32 includes, for example, a plurality of particles such as a metal oxide and a light transmissive resin in which the particles are dispersed. Particles such as metal oxides have light reflectivity. For example, at least one of TiO ₂ and Al ₂ O ₃ can be used as the particles of the metal oxide. By providing the reflective layer 32, light emitted from the semiconductor light emitting element 20 can be efficiently emitted along a direction along the stacking direction (for example, upward).

  The light emitting unit 40 is, for example, a chip on board (COB) type LED module.

In the present embodiment, the luminous flux divergence of the light emitted from the light emitting element unit 35 is 10 lm / mm ² (lumen / square millimeter) or more and 100 lm / mm ² or less. Desirably, it is 20 lm / mm ² or more. That is, in this embodiment, the ratio (light flux divergence) of the light emitted from the light emitting element portion 35 to the light emitting area is very high. In the present specification, the light emitting area substantially corresponds to the area of the mounting region 16.

  The light emitting device 110 according to the present embodiment is used for, for example, a projector.

  As illustrated in FIG. 1B, the light emitting device 110 is disposed on the lighting device member 71, for example. In FIG. 1A, the illumination device member 71 is omitted. The lighting device member 71 is a part of the lighting device. A lighting device connection member 53 is provided between the lighting device member 71 and the light emitting device 110. For the lighting device connecting member 53, for example, solder or grease is used. For example, the heat of the light emitting device 110 is conducted to the lighting device member 71 by the lighting device connecting member 53 to be radiated.

  FIG. 1A and FIG. 1B also illustrate an example of the configuration of the lighting device 210 including the light emitting device 110. The lighting device 210 includes a lighting device member 71 and a light emitting device 110. The light emitting device 110 is provided on the lighting device member 71. The lighting device 210 may further include a lighting device connection member 53. The lighting device connecting member 53 is provided between the lighting device member 71 and the light emitting device 110, and is in contact with the heat radiating member 51 of the light emitting device 110 and the lighting device member 71. The lighting device connection member 53 may be included in the light emitting device 110.

  In the light emitting device 110 according to the present embodiment, when the heat dissipation member 51 is projected onto the XY plane (first plane), the heat dissipation member 51 has an area that is five times or more the area of the mounting region 16.

  That is, in the present embodiment, the area of the heat dissipation member 51 is set to be very large with respect to the area of the mounting region 16. Thereby, the heat generated in the light emitting element portion 35 provided on the mounting region 16 is spread in the in-plane direction (XY in-plane direction) by the heat radiating member 51 having a large area. And the heat which spread in the in-plane direction is transmitted toward the illuminating device member 71 to which the light-emitting device 110 is attached, for example, and is thermally radiated efficiently.

Examples of the mounting region 16, the first metal layer 11, and the second metal layer 12 will be described.
2A to 2C are schematic plan views illustrating the light emitting device according to the first embodiment.
FIG. 2A is a plan view illustrating the first main surface 10 a of the substrate 10. FIG. 2B is a plan view illustrating the pattern of the first metal layer 11. FIG. 2C is a plan view illustrating the pattern of the second metal layer 12.

  As illustrated in FIG. 2A, the first main surface 10 a includes a mounting region 16 and a peripheral region 17. In this example, the pattern of the mounting area 16 is substantially circular. The center of the mounting region 16 is provided so as to substantially coincide with the center of the substrate 10. The peripheral area 17 is an area around the mounting area 16.

  The area of the peripheral region 17 is larger than the area of the mounting region 16. The area of the peripheral region 17 is four times or more the area of the mounting region 16. The area of the peripheral region 17 is preferably 9 times or less the area of the mounting region 16.

  For example, the end of the first main surface 10a (outer edge 10r) along one direction (for example, the X-axis direction) parallel to the first main surface 10a and passing through the center of the mounting region 16 and the mounting region 16 The distance between them (shortest distance) is not less than ½ of the width of the mounting region 16 along the direction passing through the center (X-axis direction). For example, the distance 17xa (shortest distance) between the outer edge 10r along the X-axis direction and the mounting region 16 is ½ or more of the width 16x of the mounting region 16. For example, the distance 17xb (shortest distance) between the outer edge 10r along the X-axis direction and the mounting region 16 is ½ or more of the width 16x of the mounting region 16. For example, the distance 17ya (shortest distance) between the outer edge 10r along the Y-axis direction and the mounting region 16 is ½ or more of the width 16y of the mounting region 16. For example, the distance 17 yb (shortest distance) between the outer edge 10 r along the Y-axis direction and the mounting region 16 is ½ or more of the width 16 y of the mounting region 16.

  Thereby, the area of the peripheral region 17 becomes larger than the area of the mounting region 16. By making the area of the peripheral region 17 larger than the area of the mounting region 16 where heat is generated, the generated heat is efficiently spread along the in-plane direction. Thereby, heat dissipation increases.

  As illustrated in FIG. 2B, the plurality of mounting patterns 11 p that are part of the first metal layer 11 are provided in the mounting region 16. In this example, the plurality of mounting patterns 11p are provided in a circular area. In other words, the region where the plurality of mounting patterns 11 p are provided is the mounting region 16. The mounting area 16 is an area that includes a plurality of mounting patterns 11p when projected onto the XY plane. A region between the plurality of mounting patterns 11 p is included in the mounting region 16. The inner side of the line connecting the outer edges of the mounting patterns 11p arranged on the outer side among the plurality of mounting patterns 11p is the mounting region 16.

  In order to increase the luminous flux divergence, the plurality of mounting patterns 11p are arranged, for example, in a substantially circular region. In this case, a substantially circular area containing a plurality of mounting patterns 11p may be practically used as the mounting area 16.

  The mounting region 16 includes a region where a plurality of mounting patterns 11p are provided when projected onto the XY plane. The mounting region 16 does not include a region where the connection portion 44, the first connector electrode portion 45e, and the second connector electrode portion 46e are provided when projected onto the XY plane. This area is included in the peripheral area 17.

  As already described, as illustrated in FIG. 2B, some of the plurality of mounting patterns 11p are independent of each other. Two independent mounting patterns 11p adjacent to each other are electrically connected by a semiconductor light emitting element 20 disposed thereon. Some of the plurality of semiconductor light emitting elements 20 are connected in series, for example. The plurality of semiconductor light emitting elements 20 connected in series are arranged, for example, along the X-axis direction.

  Further, for example, two of the plurality of mounting patterns 11p are connected by the connecting portion 44. Thereby, the group of the several semiconductor light emitting element 20 connected in series is further connected. A group of a plurality of semiconductor light emitting elements arranged in series along the X axis are arranged in the Y axis direction. A group of a plurality of semiconductor light emitting elements connected in series are connected in parallel to each other.

  Further, the mounting pattern 11p is electrically connected to the first connector electrode portion 45e or the second connector electrode portion 46e via the wiring pattern 44c. A current is supplied to the mounting pattern 11p via the first connector 45 provided on the first connector electrode portion 45e and the second connector 46 provided on the second connector electrode portion 46e. The The current is supplied to the semiconductor light emitting element 20, and light is generated.

  As shown in FIG. 2C, the area of the second metal layer 12 is designed to be large. The area of the second metal layer 12 is larger than the area of the mounting region 16. For example, the area of the second metal layer 12 projected onto the XY plane (a first plane parallel to the stacking direction) is 95% or more of the area of the second major surface 10b. Increasing the area of the second metal layer 12 increases the efficiency of heat dissipation.

  The planar pattern of the heat conductive layer 52 is substantially along the pattern of the second metal layer 12. By increasing the area of the second metal layer 12, the area of the heat conductive layer 52 can be increased. Thereby, the efficiency of heat conduction through the heat conductive layer 52 can be improved.

  For example, the outer edge 12r of the second metal layer 12 when projected onto the XY plane (first plane) is located outside the outer edge 16r of the mounting region 16.

  The area of the second metal layer 12 when projected onto the XY plane (first plane) may be smaller than the area of the mounting region 16. Even in this case, the area of the second metal layer 12 when projected onto the XY plane (first plane) is larger than 80% of the area of the mounting region 16. If it is smaller than this, the efficiency of heat dissipation becomes low.

FIG. 3 is a graph illustrating the light emitting device according to the first embodiment.
FIG. 3 is an example of a change in the light emission efficiency of the semiconductor light emitting element 20 when the area of the heat dissipation member 51 is changed. The horizontal axis of FIG. 3 represents the ratio Rs (Rs = S1 / S2) of the area S1 of the heat dissipation member 51 to the area S2 of the mounting region 16. The area S1 is an area when the heat radiating member 51 is projected onto the XY plane (first plane). The area S2 is an area when the mounting region 16 is projected onto the XY plane. The vertical axis in FIG. 3 represents the luminous efficiency Eff (arbitrary unit). The luminous efficiency Eff of the semiconductor light emitting element 20 tends to decrease as the temperature of the semiconductor light emitting element 20 increases. The luminous efficiency Eff corresponds to the temperature rise of the semiconductor light emitting element 20. That is, when the luminous efficiency Eff is high, the temperature of the semiconductor light emitting element 20 is kept low. When the light emission efficiency Eff is low, the temperature of the semiconductor light emitting element 20 is rising. The example shown in FIG. 3 is an example when the luminous flux divergence of the light emitted from the light emitting element portion 35 is about 20 lm / mm ² or more. The substrate 10 is provided with a second metal layer 12, and the second metal layer 12 is connected via a heat dissipation member 51 and a heat conductive layer 52.

  As shown in FIG. 3, when the ratio Rs of the area S1 of the heat dissipation member 51 to the area S2 of the mounting region 16 is low, the light emission efficiency Eff is low, and when the ratio Rs is high, the light emission efficiency Eff is high. When the ratio Rs is lower than 5, the light emission efficiency Eff decreases rapidly. This is because when the area S1 of the heat radiating member 51 is lower than five times the area S2 of the mounting region 16, the heat radiating member 51 sufficiently generates heat generated in the light emitting element portion 35 including the semiconductor light emitting element 20 and the wavelength conversion layer 31. This is because the heat is not dissipated. For this reason, in the embodiment, the ratio Rs is set to 5 or more. That is, the area S1 of the heat radiating member 51 is set to 5 times or more the area S2 of the mounting region 16.

  As shown in FIG. 3, in the region where the ratio Rs is larger than 10, the light emission efficiency Eff tends to be saturated. If the ratio Rs is excessively high and the area S1 of the heat dissipating member 51 is excessively large, the size of the device becomes excessively large. For this reason, when downsizing the apparatus, the area S1 of the heat dissipation member 51 is set to 9 times or more the area S2 of the mounting region 16. As shown in FIG. 3, if the ratio Rs is greater than a certain value, the light emission efficiency Eff does not substantially change, resulting in disadvantages of an increase in size and cost. For this reason, the ratio Rs is desirably 22 times or less.

As shown in FIG. 3, when the ratio Rs of the area S1 of the heat dissipation member 51 to the area S2 of the mounting region 16 is low, the tendency that the light emission efficiency Eff rapidly decreases is the light emitted from the light emitting element portion 35. When the luminous flux divergence of is low, it is not remarkable. For example, when the luminous flux divergence is ² lm / mm ² , the decrease in the light emission efficiency Eff accompanying the decrease in the ratio Rs is moderate. When the luminous flux divergence is 10 lm / mm ² or more and the ratio Rs decreases, the light emission efficiency Eff rapidly decreases. For this reason, in this embodiment, when the luminous flux divergence is as high as 10 lm / mm ² or higher, the ratio Rs is set to 5 or higher.

Essentially, the size of the device is preferably small. However, when the luminous flux divergence is as high as 10 lm / mm ² or higher, even if the size of the apparatus is increased, the ratio Rs is set to 5 or higher to obtain a high luminous efficiency Eff. Thus, this embodiment has a configuration that is specially applied to a light emitting device having a high luminous flux divergence, such as a projector. According to the present embodiment, it is possible to provide a light emitting device with improved heat dissipation even when the luminous flux divergence is high.

  Further, similarly to the area S1 of the heat dissipation member 51 being set to 5 times or more the area S2 of the mounting region 16, the area of the substrate 10 may be set to 5 times or more of the area S2 of the mounting region 16. preferable. That is, in the embodiment, the area of the peripheral region 17 is set to be four times or more the area of the mounting region 16. Thereby, high luminous efficiency Eff can be obtained.

  In the present embodiment, a second metal layer 12 insulated from the first metal layer 11 is provided on the lower surface of the substrate 10. For example, the second metal layer 12 is not a path for a current supplied to the semiconductor light emitting element 20. The second metal layer 12 is provided to obtain high heat dissipation.

  For example, there is a configuration in which electrodes are provided on both the upper surface and the lower surface of the substrate 10, and the electrodes provided on the lower surface are electrically connected to the electrodes provided on the upper surface through through holes penetrating the substrate 10. For example, the semiconductor light emitting element is connected to the electrode provided on the upper surface, and the current supplied to the semiconductor light emitting element is supplied via the electrode provided on the lower surface. In such a configuration, the electrode provided on the lower surface serves as a current path for supplying the semiconductor light emitting element. For this reason, the electrode (at least one) provided on the lower surface cannot be brought into contact with the heat radiating member 51 provided on the lower side thereof. For this reason, heat dissipation through the electrodes provided on the lower surface is insufficient.

Such a configuration can be used for a light emitting device having a low luminous flux divergence (for example, a light emitting device having a luminous flux divergence of less than 10 lm / mm ² ). However, when such a configuration is used for a light-emitting device having a high luminous flux divergence (for example, a light-emitting device having a luminous flux divergence of 10 lm / mm ² or more), heat dissipation becomes insufficient, and as a result, sufficient heat dissipation is achieved. I can't get it.

  Thus, the structure in which the second metal layer 12 insulated from the first metal layer 11 is provided on the lower surface of the substrate 10 is specially applied to a light emitting device having a high luminous flux divergence, such as a projector. It is a configuration. Thereby, even when the luminous flux divergence is high, the heat dissipation can be enhanced.

  In the present embodiment, the heat conductivity of the heat radiating member 51 is 300 W / (m · K) (watts / (meter · Kelvin) or more. The heat conductivity of the heat conduction layer 52 is 5 W / (m · K). As described above, it is preferably 20 W / (m · K) or more, and the thickness t52 of the heat conductive layer 52 along the Z-axis direction (the stacking direction from the heat dissipation member 51 toward the light emitting unit 40) (see FIG. 1B). Is 10 μm (micrometers) or less.

  Usually, aluminum is used for the lighting device member 71, and the thermal conductivity of the lighting device member 71 is lower than the thermal conductivity of the heat dissipation member 51. By setting the thermal conductivity of the heat dissipating member 51 to 300 W / (m · K) or more, the heat can be sufficiently spread in the in-plane direction (XY in-plane direction) before reaching the lighting device member 71. , Heat dissipation is improved.

  The highest temperature portion of the upper surface 35u (see FIG. 1B) of the light emitting element portion 35, the edge 10ue (see FIG. 1B) of the first main surface 10a (upper surface) of the substrate 10, The thermal resistance during the period is 0.4 ° C./W (degrees / watt) or less.

  Thereby, since the junction temperature of the semiconductor light-emitting element 20 falls, luminous efficiency can be improved.

  The thermal resistance between the edge 51r of the heat dissipation member 51 and the edge 10ue of the first main surface 10a (upper surface) of the substrate 10 is 0.1 ° C./W or less.

  Thereby, since the junction temperature of the semiconductor light-emitting element 20 falls, luminous efficiency can be improved. Further, even when solder is used as the heat conductive layer 52, the warpage of the substrate 10 due to the difference in expansion coefficient can be suppressed.

  In the light emitting device 110 according to the present embodiment, the ratio of the voltage applied to the light emitting element unit 35 to the current supplied to the light emitting element unit 35 is 100 V / A (volt / ampere) or more and 1000 V / A or less. By setting the ratio of the voltage to the current to 100 V / A or more, for example, the conversion efficiency of the inverter included in the lighting circuit can be improved. If the ratio of voltage to current exceeds 1000 V / A or more, this ratio is too high, and the device may be destroyed, which is not practical.

Hereinafter, examples of configurations of the mounting pattern 11p and the semiconductor light emitting element 20 will be described.
FIG. 4A and FIG. 4B are schematic plan views illustrating the light emitting device according to the first embodiment.
FIG. 4A illustrates the pattern shape of the mounting pattern 11p. The fourth (b) illustrates the arrangement of the semiconductor light emitting elements 20.

  As shown in FIG. 4A, some of the plurality of mounting patterns 11p are arranged along the X-axis direction. Further, a group of a plurality of mounting patterns 11p arranged in the X-axis direction are arranged in the Y-axis direction.

  Each of the plurality of mounting patterns 11p includes a first mounting portion 11a, a second mounting portion 11b, and a third mounting portion 11c. The third mounting portion 11c is provided between the first mounting portion 11a and the second mounting portion 11b, and connects the first mounting portion 11a and the second mounting portion 11b.

  In one mounting pattern 11p, the width w3 of the third mounting portion 11c along the transverse direction D2 perpendicular to the direction (extending direction D1) from the first mounting portion 11a to the second mounting portion 11b is the transverse direction. It is narrower than the width w1 of the first mounting portion 11a along D2. The width w3 of the third mounting portion 11c along the transverse direction D2 is narrower than the width w2 of the second mounting portion 11b along the transverse direction D2.

  As shown in FIG. 4B, the semiconductor light emitting element 20 is disposed on the mounting pattern 11p. A part of the semiconductor light emitting element 20 is disposed, for example, on a part of the first mounting pattern 11pa. Another part of the semiconductor light emitting element 20 is disposed, for example, on a part of the second mounting pattern 11pb. For example, in one mounting pattern 11p (for example, the first mounting pattern 11pa), the first mounting portion 11a is electrically connected to one of the semiconductor light emitting elements (for example, the first semiconductor light emitting element 20a). The second mounting portion 11b is electrically connected to the second semiconductor light emitting element 20b. The second semiconductor light emitting element 20 b is the semiconductor light emitting element 20 adjacent to the first semiconductor light emitting element 20 a among the plurality of semiconductor light emitting elements 20.

  For example, the semiconductor package 20 covers the first mounting portion 11a and the second mounting portion 11b of the mounting pattern 11p. For example, the third mounting portion 11 c of the mounting pattern 11 p is not covered with the semiconductor light emitting element 20.

  For example, as illustrated in FIG. 1B and FIG. 4B, any one of the mounting patterns 11p (for example, the first mounting pattern 11pa) is one of the semiconductor light emitting elements 20 (for example, the first semiconductor light emitting element). 20a) and a first mounting part 11a. Another mounting pattern 11p (second mounting pattern 11pb adjacent to the first mounting pattern 11pa) includes the second mounting portion 11b bonded to any one of the semiconductor light emitting elements 20 (for example, the first semiconductor light emitting element 20a). Have.

  As shown in FIG. 4B, when projected onto the XY plane (first plane), any one of the semiconductor light emitting elements 20 (for example, the first semiconductor light emitting element 20a) is the first mounting described above. A portion 26a outside the outer edge 11ar of the portion 11a and a portion 26b outside the outer edge 11br of the second mounting portion 11b are included.

  For example, the width w20 along the transverse direction D2 of each of the plurality of semiconductor light emitting elements 20 is wider than the width w1 of the first mounting portion 11a along the transverse direction D2, and the second mounting portion 11b along the transverse direction D2. It is wider than the width w2.

  For example, when projected onto the XY plane (first plane), each of the plurality of semiconductor light emitting elements 20 overlaps at least a part of the third mounting portion 11c.

  Accordingly, the first mounting portion 11a and the second mounting portion 11b of the mounting pattern 11p are covered with the semiconductor light emitting element 20.

  As already explained, for example, a ceramic substrate whose main component is alumina is used for the substrate 10. The light reflectance of the ceramic substrate is relatively high. For example, the reflectance of the surface of the substrate 10 (for example, the first main surface 10a) is higher than the reflectance of each surface of the plurality of mounting patterns 11p. For example, the reflectance of the surface of the mounting pattern 11p is relatively low.

  By covering the first mounting portion 11a and the second mounting portion 11b of the mounting pattern 11p with the semiconductor light emitting element 20, the area where the mounting pattern 11p having a relatively low reflectance is exposed on the surface can be reduced, so that high reflection is achieved as a whole. Rate is obtained. In this configuration, even when solder is used for the first bonding metal member 21e and the second bonding metal member 22e, the solder is difficult to spread on the side surface of the semiconductor light emitting element 20 when the semiconductor light emitting element 20 is mounted. In a flip chip type LED, a semiconductor layer may be exposed on a side surface due to a manufacturing method. By using this configuration, it is possible to suppress the occurrence of a short circuit due to the spread solder.

  The plurality of semiconductor light emitting elements 20 are separated from each other. For this reason, the third mounting portion 11 c of the mounting pattern 11 p is not covered with the semiconductor light emitting element 20 at a position between the plurality of semiconductor light emitting elements 20.

  As described above, the width w3 of the third mounting portion 11c along the transverse direction D2 is set to be narrower than the width w1 of the first mounting portion 11a and narrower than the width w2 of the second mounting portion 11b. The exposed area of the substrate 10 having a high rate can be increased. Thereby, a high reflectance is obtained as a whole.

  For example, the average light reflectance in the mounting region 16 of the mounting substrate unit 15 when the light emitting element unit 35 is removed is 70% or more. By adopting the above arrangement, such a high light reflectance can be obtained.

FIG. 5 is a schematic cross-sectional view illustrating the light emitting device according to the first embodiment.
FIG. 5 illustrates a part of the light emitting unit 40.

  As shown in FIG. 5, the first metal layer 11 includes a copper layer 13 a (Cu layer). The first metal layer 11 may further include a gold layer 13d (Au) layer. The copper layer 13 a is provided between the gold layer 13 d and the substrate 10. In this example, the first metal layer 11 includes a nickel layer 13b (Ni layer) provided between the copper layer 13a and the gold layer 13d, and a palladium layer 13c provided between the nickel layer 13b and the gold layer 13d. (Pd layer). Thus, in this example, the first metal layer 11 has a laminated structure of Cu / Ni / Pd / Au.

  On the other hand, the second metal layer 12 includes a copper layer 14a. The second metal layer 12 may further include a gold layer 14d. The copper layer 14 a is provided between the gold layer 14 d and the substrate 10. In this example, the second metal layer 12 includes a nickel layer 14b provided between the copper layer 14a and the gold layer 14d, and a palladium layer 14c provided between the nickel layer 14b and the gold layer 14d. Contains. Thus, in this example, the second metal layer 12 has a stacked structure of Cu / Ni / Pd / Au.

  In the above, the boundary between each of a copper layer, a nickel layer, a palladium layer, and a gold layer may not be clear. Some of these layers may have a mixed state (for example, an alloy state).

  For example, the same material as that of the first metal layer 11 can be used for the second metal layer 12. For the second metal layer 12, the same stacked structure as the stacked structure of the first metal layer 11 can be applied. Thereby, formation of these metal layers becomes easy. In the embodiment, the configuration of the second metal layer 12 may be different from the configuration of the first metal layer 11.

  The thickness t11 of the first metal layer 11 is, for example, 30 μm or more and 100 μm or less, for example, 40 μm or more and 60 μm or less. The thickness t12 of the second metal layer 12 is, for example, 30 μm or more and 100 μm or less, for example, 40 μm or more and 60 μm or less.

  The copper layer 13a of the first metal layer 11 and the copper layer 14a of the second metal layer 12 can be formed by electrolytic plating, for example. Each of the thickness of the copper layer 13a and the thickness of the copper layer 14a is, for example, 30 μm or more and 100 μm or less, for example, about 50 μm.

  The nickel layer 13b, the palladium layer 13c, and the gold layer 13d are formed by, for example, electroless plating. The nickel layer 14b, the palladium layer 14c, and the gold layer 14d are formed by, for example, electrolytic plating.

  Each of the thickness of the nickel layer 13b and the thickness of the nickel layer 14b is, for example, not less than 2 μm and not more than 8 μm, for example, about 4.5 μm. Each of the thickness of the palladium layer 13c and the thickness of the palladium layer 14c is, for example, not less than 0.075 μm and not more than 0.2 μm, for example, about 1 μm. Each of the thickness of the gold layer 13d and the thickness of the gold layer 14d is, for example, 0.05 μm or more and 0.2 μm or less, for example, about 0.1 μm.

  By forming at least part of the first metal layer 11 and at least part of the second metal layer 12 by electroless plating, the side surface of the first metal layer 11 and the side surface of the second metal layer 12 are Can be substantially vertical.

  For example, the side surface 11s of the first metal layer 11 when cut along a plane perpendicular to the first main surface 10a (for example, a second plane such as a YZ plane) is in the stacking direction (Z-axis direction). Can be made almost parallel. The angle θ between the side surface 11s of the first metal layer 11 and the first main surface 10a is, for example, not less than 80 degrees and not more than 95 degrees. For example, the angle θ is more preferably 85 degrees or more.

  If the angle θ is small, the area of the lower surface of the mounting pattern 11p is excessive with respect to the area for mounting the mounting pattern 11p that is a part of the first metal layer 11 (for example, the area of the upper surface). It gets bigger. For this reason, the ratio of the part covered with the mounting pattern 11p among the upper surfaces (the 1st main surface 10a) of the board | substrate 10 becomes high. For this reason, it becomes difficult to increase the reflectivity of the entire mounting region 16.

  Mounting on the upper surface (first main surface 10a) of the substrate 10 by setting the angle θ between the side surface 11s of the first metal layer 11 and the first main surface 10a to 80 degrees or more and 95 degrees or less. The ratio of the portion covered with the pattern 11p can be reduced. Thereby, the reflectance as the whole mounting region 16 can be made sufficiently high. Thereby, the luminous flux divergence can be improved.

  The curvature of the corner portion of the cross section of the first metal layer 11 is relatively high. That is, the radius of curvature is small. The cross section of the first metal layer 11 is close to a rectangle, that is, the side surface 11s is close to vertical. For example, the first metal layer 11 further includes an upper surface 11u parallel to the XY plane (first plane). The radius of curvature of the corner portion 11su that connects the upper surface 11u of the first metal layer 11 and the side surface 11s of the first metal layer 11 is 10 μm or less. Thereby, the area of the lower surface of the mounting pattern 11p can be made smaller than the area for mounting the mounting pattern 11p (for example, the area of the upper surface 11u of the mounting pattern 11p). Thereby, the reflectance as the whole mounting area | region 16 can be made high, and luminous flux divergence can be improved.

  In this example, a part of the wavelength conversion layer 31 is disposed at a position 11 g (space) between any one of the plurality of semiconductor light emitting elements 20 and the substrate 10. The position 11g is a position between any one of the mounting patterns 11p (for example, the first mounting pattern 11pa) and another mounting pattern 11p (for example, the second mounting pattern 11pb). By arranging a part of the wavelength conversion layer 31 also at this position 11g (space), the first light emitted from the semiconductor light emitting element 20 can be efficiently converted into the second light by the wavelength conversion layer 31. In the position 11g (space), a wavelength conversion member containing a transparent resin or another phosphor material may be separately arranged.

  In order to arrange a part of the wavelength conversion layer 31 at the position 11g (space), a space including the position 11g may be enlarged. For example, the gap between the semiconductor light emitting element 20 and the substrate 10 is increased. For example, the distance tg between any of the plurality of semiconductor light emitting elements 20 and the substrate 10 along the Z-axis direction (the stacking direction from the heat dissipation member 51 to the light emitting unit 40) is set to be relatively long. For example, the distance tg is 1/10 or more of the thickness t20 (height) along the Z-axis direction of the plurality of semiconductor light emitting elements 20.

  For example, the height of the semiconductor light emitting element 20 (thickness t20 along the Z-axis direction) is, for example, not less than 50 μm and not more than 500 μm, for example, 300 μm. The distance tg is, for example, not less than 40 μm and not more than 110 μm, for example, 60 μm. By increasing the thickness t11 of the first metal layer 11, the distance tg can be increased.

  In the embodiment, the thickness t10 of the substrate 10 is, for example, not less than 0.3 mm and not more than 2 mm, for example, 0.635 mm. If the thickness t10 of the substrate 10 is less than 0.3 mm, for example, the mechanical strength of the substrate 10 becomes weak. When the thickness t10 of the substrate 10 exceeds 2 mm, for example, the efficiency of conduction of heat generated in the semiconductor light emitting element 20 (light emitting element portion 35) to the heat radiating member 51 becomes low.

  As illustrated in FIG. 5, the wavelength conversion layer 31 includes a plurality of wavelength conversion particles 31 a such as a phosphor, and a light transmissive resin 31 b in which the plurality of wavelength conversion particles 31 a are dispersed. The wavelength conversion particle 31a absorbs at least a part of the first light emitted from the plurality of semiconductor light emitting elements 20, and emits second light having a wavelength different from the wavelength of the first light.

FIG. 6 is a schematic cross-sectional view illustrating the light emitting device according to the first embodiment.
FIG. 6 is a cross-sectional view corresponding to a cross section taken along line A1-A2 of FIG.
As shown in FIG. 6, the height of the connector is preferably about the height of the light emitting element portion 35 or less. For example, the distance h45 (height) between the first main surface 10a of the substrate 10 and the upper surface 45u of the first connector 45 is such that the first main surface 10a of the substrate 10 and the upper surface 35u of the light emitting element unit 35 are Is less than 1.2 times the distance h35 (height). For example, the distance h45 is preferably 1.1 times or less than the distance h35. The distance h45 is more preferably equal to or less than the distance h35.

  If the distance h45 is excessively longer than the distance h35 and the upper surface 45u of the first connector 45 is positioned excessively above the upper surface 35u of the light emitting element unit 35, light emitted from the light emitting element unit 35 (oblique light) ) Enters the first connector 45. This light is absorbed by the first connector 45 and becomes a loss. Furthermore, the deterioration of the first connector 45 is promoted by this light. By shortening the distance h45 and lowering the upper surface 45u of the first connector 45, it becomes easy to suppress light loss and deterioration of the first connector 45.

  The same applies to the height of the second connector 46. For example, the distance h46 (height) between the first main surface 10a of the substrate 10 and the upper surface 46u of the second connector 46 is such that the first main surface 10a of the substrate 10 and the upper surface 35u of the light emitting element portion 35 are Is less than 1.2 times the distance h35 (height). For example, the distance h46 is preferably 1.1 times or less than the distance h35. The distance h46 is more preferably equal to or less than the distance h35. Thereby, it becomes easy to suppress the loss of light and the deterioration of the second connector 46.

  In the embodiment, the connector is arranged away from the mounting area 16. For example, the distance L1 (the shortest distance parallel to the XY plane) between the first connector 45 and the mounting region 16 is ½ or more of the width 16x of the mounting region 16. For example, the distance L2 between the second connector 46 and the mounting region 16 (the shortest distance parallel to the XY plane) is ½ or more of the width 16x of the mounting region 16. Thereby, the extent that the light (oblique light) emitted from the light emitting element portion 35 enters the first connector 45 and the second connector 46 can be reduced. Thereby, it becomes easy to suppress the loss of light and the deterioration of the connector.

  In the light emitting device 110, laser printing may be performed on the substrate 10. For example, a two-dimensional barcode is printed by laser printing. In this case, the width of the laser printing region is preferably 1/5 or less of the thickness t10 of the substrate 10.

FIG. 7 is a schematic cross-sectional view illustrating another light emitting device according to the first embodiment.
As shown in FIG. 7, another light emitting device 111 according to the present embodiment includes a heat radiating member 51, a heat conductive layer 52, and a plurality of light emitting units 40 (for example, a first light emitting unit 40 a and a second light emitting unit 40 b. Etc.). The configurations already described can be applied to the heat radiating member 51 and the heat conductive layer 52 of each of the light emitting units 40. FIG. 7 also illustrates the configuration of the illumination device 211 according to the embodiment. The lighting device 211 includes a lighting device member 71 and a light emitting device 111 provided thereon.

  Thus, a plurality of light emitting units 40 may be provided for one heat radiating member 51. The heat conductive layer 52 is disposed between the light emitting units 40 and the heat dissipation member 51. At this time, the heat conductive layer 52 may be divided for each of the plurality of light emitting units 40, and one heat conductive layer 52 may be provided for the plurality of light emitting units 40. In the case of being divided, the heat conductive layer 52 can be regarded as having a plurality of patterns, or can be regarded as being provided with a plurality of heat conductive layers 52.

(Second Embodiment)
The present embodiment relates to the mounting substrate unit 15. The mounting substrate unit 15 includes, for example, the substrate 10 and a conductive layer (for example, the first metal layer 11) provided thereon. For example, as illustrated in FIG. 5, the conductive layer (for example, the metal layer 11) includes a laminated film including a nickel layer 13b, a palladium layer 13c, and a gold layer 13d. For example, as already described, the nickel layer 13b, the palladium layer 13c, and the gold layer 13d are provided in this order on the copper layer 13a.

  A resist layer may be provided around the conductive layer provided on the substrate 10. For example, a silicone material is used for this resist layer. As the substrate 10, a ceramic substrate having a high reflectance is used.

  In the present embodiment, a Ni / Pd / Au plating layer is formed on the reflective surface of the substrate 10. Thereby, for example, color change is suppressed. Thereby, the fall of a reflectance can be suppressed. The efficiency can be further improved by using a silicone material for the resist and a ceramic substrate having a high reflectance.

  When, for example, a Ni / Ag plating layer is used on the reflective surface of the mounting substrate, discoloration occurs, and the light flux tends to decrease accordingly. This discoloration is mainly influenced by sulfur-based gas contained in the air. On the other hand, when the Ni / Au plating layer is used, the total light reflectance is lower than that of the Ni / Ag plating layer.

  In the embodiment, resistance to sulfur corrosion can be improved and high reflectance can be maintained. Thereby, discoloration can be suppressed and high efficiency is obtained.

In the present embodiment, a ceramic substrate such as Al ₂ O ₃ can be used as the substrate. A metal substrate such as Al may be used as the substrate.

  For example, a copper plating layer (copper layer 13a) is provided on the main surface (which may be the upper surface or the lower surface) of the substrate. On this copper plating layer, a Ni / Pd / Au laminated film is provided. This laminated film is formed by, for example, an electrolytic plating method or an electroless plating method.

  In the embodiment, the total light reflectance at a wavelength of 460 nm on the surface of the Ni / Pd / Au laminated film (the surface of the gold layer 13d) is 35% or more and 50% or less. The total light reflectance is, for example, the ratio of the total reflected light beam to the parallel incident light beam of the test piece. The total light reflectance is a light reflectance including a diffusion component.

  In the embodiment, the total light reflectance at a wavelength of 460 nm on the surface of the multilayer film of Ni / Pd / Au (gold layer 13d) is 60% or more and 70% or less.

  In the embodiment, the thickness of the Ni layer is 3 μm or more and 6 μm or less. The thickness of the Pd layer is 0.05 μm or more and 0.1 μm or less. The thickness of the Au layer is 0.05 μm or more and 3 μm or less.

  In the embodiment, the total light reflectance at a wavelength of 460 nm of the substrate is 85% or more and 93% or less. The total light reflectance at a wavelength of 560 nm of the substrate is 85% or more and 93% or less.

  The mounting substrate unit according to the present embodiment can be used for, for example, an LED module. This LED module can be used for, for example, a lighting fixture.

(Third embodiment)
The present embodiment relates to a COB module (for example, the light emitting element unit 35). The COB module includes, for example, a semiconductor light emitting element 20 and a wavelength conversion layer 31. The semiconductor light emitting element 20 emits blue light. The wavelength conversion layer 31 generates, for example, white visible light using the blue light as excitation light. The luminous flux divergence in the COB module is 10 lm / mm ² or more, and the power consumption of the COB module is 50 W or more.

  In the present embodiment, the connector that supplies power to the COB module is made of metal. This connector has a monopolar structure. In one COB module, two or more connectors (for example, the first connector 45 and the second connector 46) are provided.

  In the COB module, a connector containing a resin is often used. On the other hand, in a high output COB module used for a projector or the like, it is desirable that the light emitting area (for example, the area of the mounting region 16) is small in order to satisfy the light distribution characteristics. When the light emission area is reduced and the light emission density is increased, the deterioration of the connectors arranged around the mounting region 16 due to light becomes severe. In the connector, discoloration may occur.

According to experiments, when the luminous flux divergence is 10 lm / mm ² or more and the module power is 50 W or more, discoloration occurs remarkably in the connector containing resin. This discoloration occurs in the resin used for the connector.

  In the present embodiment, a resin that causes discoloration is not used as the connector. The connector is made of only metal. Thereby, discoloration of a connector can be suppressed.

  In the embodiment, a plurality of connectors are provided, and one of the connectors is used as a positive electrode, and another connector is used as a negative electrode.

  In the embodiment, for example, the first connector 45 and the second connector 46 are arranged so as to sandwich the light emitting element portion 35. As a result, the heat of the semiconductor light emitting element 20 serving as a heat source on the first main surface 10 a of the substrate 10 can be spread in advance via the first metal layer 11. Therefore, heat dissipation is further improved.

(Fourth embodiment)
The present embodiment relates to the wavelength conversion layer 31. As illustrated in FIG. 5, the wavelength conversion layer 31 includes, for example, a plurality of wavelength conversion particles 31 a and a light transmissive resin 31 b (for example, a sealing material). A plurality of wavelength conversion particles 31a are dispersed in the light transmissive resin 31b. In the present embodiment, the light transmissive resin 31b contains dimethyl silicone as a main component. The light transmittance of the light transmissive resin 31b is 86% or more. The hardness (Shore A) of the light transmissive resin 31b is 15 or more and 50 or less.

  Shore A is a standard for measuring the hardness of general rubber, for example. An indenter (push needle or indenter) is pushed into the surface of the object to be deformed, and the amount of deformation (indentation depth) is measured and digitized. For the measurement of Shore A, for example, a durometer (spring type rubber hardness meter) is used.

  In the COB module of the light emitting device, in order to obtain a high luminous flux divergence, semiconductor light emitting elements are mounted on the substrate at a high density. For this reason, heat dispersion is bad. Further, the amount of light incident on the wavelength conversion layer 31 is increased. For this reason, the temperature of the wavelength conversion layer 31 tends to rise. When silicone is used as the light transmissive resin of the wavelength conversion layer 31, the thermal conductivity of silicone is about 0.1 ° C. · W. For this reason, in the high power COB module, the temperature of the wavelength conversion layer 31 is significantly higher than that in the low power COB module. This temperature increases the hardness of the silicone.

  Furthermore, thermal stress is applied due to an increase in temperature, which may cause cracks or peeling between the wiring (for example, the first metal layer 11) used in the COB module and the wavelength conversion layer 31.

  In the present embodiment, the hardness (Shore A) of the light transmissive resin 31b is 15 or more and 50 or less. Thereby, a crack and peeling can be suppressed.

The present embodiment can include a light emitting element unit 35 including, for example, a semiconductor light emitting element 20 that emits light with a wavelength of 400 nm or more and 480 nm or less, and a wavelength conversion layer 31 that covers the semiconductor light emitting element 20. The luminous flux divergence in the light emitting element unit 35 (COB module) is 10 lm / mm ² or more, and the power consumption is 50 W or more.

  When the thickness of the light transmissive resin 31b of the wavelength conversion layer 31 is 2 mm, the total light transmittance of the light transmissive resin 31b with respect to the wavelength of 400 nm is 85% or more.

  According to the present embodiment, it is possible to provide a light emitting device having a luminous flux divergence that can correspond to a narrow angle such as a projector. Even when the temperature rises during lighting, stress due to temperature stress can be relieved, and cracks and peeling can be suppressed.

An example of an experimental result regarding the light emitting device according to the present embodiment will be described.
For example, the light emitting element unit 35 is disposed on the mounting substrate unit 15. The light emitting element unit 35 includes a plurality of semiconductor light emitting elements 20. Each of the plurality of semiconductor light emitting elements 20 is a square with one side of 1 mm, and the dominant wavelength is 455 nm. In the arrangement of the plurality of semiconductor light emitting elements 20, the pitch is 1.6 mm. The number of semiconductor light emitting elements 20 is 96.

  In the first sample, dimethyl silicone having a Shore A of 70 and an elongation of 70% is used as the light-transmitting resin 31b of the wavelength conversion layer 31 of the light emitting element portion 35. In the second sample, dimethyl silicone having a Shore A of 43 and an elongation of 150% is used as the light transmissive resin 31b. In the third sample, dimethyl silicone having a Shore A of 32 and an elongation of 200% is used as the light transmissive resin 31b.

  For these samples, a lighting test is performed at a current of 440 mA, a voltage of 144 V, and a junction temperature of 130 ° C. During the lighting test, the temperature of the upper surface of the wavelength conversion layer 31 is 120 ° C. or higher and 150 ° C. or lower.

  In the first sample, cracks occur after about 100 hours of the lighting test. In the second sample and the third sample, no crack occurs even after 2000 hours to 3000 hours. Therefore, Shore A is preferably 50 or less.

  On the other hand, if Shore A is less than 15 and is too small, workability is poor. For this reason, in this embodiment, Shore A shall be 15-50. Thereby, a crack and peeling can be suppressed and workability | operativity is also good.

  By reducing the absorption of light in the visible light region in the light transmissive resin 31b, deterioration due to light can be suppressed. When the thickness is 2 mm, high light extraction efficiency can be obtained by setting the total light transmittance of the light transmissive resin 31b to a wavelength of 400 nm to 85% or more. The total light transmittance is more preferably 90% or more.

(Fifth embodiment)
FIG. 8 is a schematic cross-sectional view illustrating a light emitting device and a lighting device according to the fifth embodiment. As illustrated in FIG. 8, the lighting device 221 according to this embodiment includes a light emitting device 121 and a lighting device member 71. The illumination device member 71 includes, for example, a base portion 72 and a reflection portion 73. In this example, the base part 72 is plate-shaped. The reflection portion 73 is provided along the edge of the base portion 72. A light emitting device 121 is provided on the base portion 72. The reflection unit 73 reflects the light LL emitted from the light emitting device 121. The reflection unit 73 can efficiently irradiate the light LL in a desired direction. The base portion 72 efficiently dissipates heat generated in the light emitting device 121 while holding the light emitting device 121.

  In this example, the light emitting device 121 includes a heat radiating member 51, a heat conductive layer 52, and a plurality of light emitting units 40 (for example, a first light emitting unit 40a and a second light emitting unit 40b).

  The interval between the plurality of light emitting units 40 is preferably short. Thereby, high intensity light LL is emitted from a narrow region. When the light LL is emitted from a wide area, it is difficult to obtain appropriate reflection at the reflecting portion 73, and it is difficult to perform highly efficient reflection in a desired direction. For this reason, it is preferable to make the light emission characteristics close to a point light source so that the light LL is emitted from a narrow region. Thereby, highly efficient reflection in the reflection part 73 is obtained.

Also in this embodiment, by setting the ratio Rs to 5 above, when the light beam divergence is high 10 lm / mm ² or more 100lm / mm ² or less and the luminous emittance also, the light emitting device can be provided with an improved heat dissipation property .

According to the following configuration, for example, the interval between the plurality of light emitting units 40 can be shortened practically.
FIG. 9A and FIG. 9B are schematic views illustrating the light emitting device and the lighting device according to the fifth embodiment.
FIG. 9A is a plan view. FIG. 9B is a cross-sectional view illustrating a cross section taken along line A1-A2 of FIG.
As shown in FIGS. 9A and 9B, the light emitting device 121 according to this embodiment includes a heat dissipation member 51, a heat conductive layer 52, and a plurality of light emitting units 40 (for example, first light emitting units). 40a, second light emitting unit 40b, third light emitting unit 40c, and fourth light emitting unit 40d). The configuration described in the first embodiment can be applied to the heat radiating member 51 and the heat conductive layer 52 of each of the light emitting units 40. In this example, the heat conductive layer 52 is divided for each of the plurality of light emitting units 40. The second light emitting unit 40b is arranged in a plane parallel to the first light emitting unit 40a and the first main surface 10a.

  For example, the heat dissipation member 51 includes a copper substrate and a nickel layer provided on the surface of the substrate. The nickel layer is formed by plating, for example. For the heat conductive layer 52, for example, SnAg solder is used.

  FIG. 9A and FIG. 9B also illustrate the configuration of the illumination device 221 according to the embodiment. The illuminating device 221 includes an illuminating device member 71 (for example, the base portion 72) and the light emitting device 121 provided thereon.

  The first light emitting unit 40a includes a plurality of semiconductor light emitting elements 20 (such as the first semiconductor light emitting element 20a and the second semiconductor light emitting element 20b). The second light emitting unit 40b includes a plurality of semiconductor light emitting elements 20 (such as a third semiconductor light emitting element 20c and a fourth semiconductor light emitting element 20d).

  For example, the first light emitting unit 40a includes a first mounting substrate unit 15a. The second light emitting unit 40b includes a second mounting substrate unit 15b. The configuration of the mounting substrate unit 15 described in the first embodiment can be applied to each of the first mounting substrate unit 15a and the second mounting substrate unit 15b.

  The substrate 10 of one light emitting unit 40 (first light emitting unit 40a) among the plurality of light emitting units 40 has a first side surface 10sa. The first side surface 10sa intersects the first main surface 10a.

  The substrate 10 of another light emitting unit 40 (second light emitting unit 40b) among the plurality of light emitting units 40 has a second side surface 10sb. The second side surface 10sb intersects the first main surface 10a and faces the first side surface 10sa.

  The light emitting device 121 further includes a light reflecting resin layer 60. The light reflecting resin layer 60 is light reflective and insulating. The light reflecting resin layer 60 covers at least a part of the first side surface 10sa and covers at least a part of the second side surface 10sb.

The light reflecting resin layer 60 includes, for example, an insulating resin and a plurality of particles dispersed in the insulating resin. For example, at least one of TiO ₂ and Al ₂ O ₃ is used for the plurality of particles. As the insulating resin, for example, at least one of a silicone resin, an epoxy resin, an acrylic resin, and a polyimide resin is used. The reflectance of the light reflecting resin layer 60 is, for example, 70% or more. As a result, high reflectivity can be obtained together with high insulation, and the light utilization efficiency is improved.

  As described above, it may be preferable to reduce the interval between the light emitting units 40. In order to reduce the interval between the plurality of light emitting units 40, for example, the area of the substrate 10 included in each of the plurality of light emitting units 40 is reduced. On the other hand, the first metal layer 11 provided on the first main surface 10a of the substrate 10 and the second metal layer 12 provided on the second main surface 10b need to have areas suitable for each.

  When the area of the substrate 10 is reduced while making the areas of the first metal layer 11 and the second metal layer 12 appropriate, the distance between the end of the substrate 10 and the end of the first metal layer 11 is reduced. And the end of the second metal layer 12 are reduced. As a result, the creepage distance in these metal layers is shortened.

  Thus, if the space | interval between the several light emission parts 40 is made small, the creeping distance in the mounting board | substrate part 15 will become short, and as a result, insulation will deteriorate easily.

  At this time, in the present embodiment, the light reflecting resin layer 60 is provided between the mounting substrate portions 15 of the plurality of adjacent light emitting units 40. The light reflecting resin layer 60 covers at least a part of the first side surface 10sa. Thereby, even when the creeping distance in the 1st light emission part 40a becomes short, favorable insulation can be maintained in the 1st mounting substrate part 15a. Similarly, the light reflecting resin layer 60 covers at least a part of the second side surface 10sb. Thereby, even when the creeping distance in the second light emitting unit 40b is shortened, good insulation can be maintained in the second mounting substrate unit 15b.

  In this example, as illustrated in FIG. 9B, the light reflecting resin layer 60 covers the first side surface 10 sa and the second side surface 10 sb, and includes the one light emitting unit 40 (the first light emitting unit 40 a). A part of the first main surface 10a of the substrate 10 and a part of the first main surface 10a of the substrate 10 of the other light emitting unit 40 (second light emitting unit 40b) are covered. For example, the light reflecting resin layer 60 covers a part of the first metal layer 11 of the first light emitting unit 40a and a part of the first metal layer 11 of the second light emitting unit 40b. Thereby, the deterioration of insulation is further suppressed.

  For example, the light reflecting resin layer 60 covers the side surface of the first metal layer 11 of the first light emitting unit 40a and the side surface of the first metal layer 11 of the second light emitting unit 40b. Thereby, the insulation between the side surface of the 1st metal layer 11 of the 1st light emission part 40a and the side surface of the 1st metal layer 11 of the 2nd light emission part 40b can be improved.

  In this example, the light reflecting resin layer 60 covers the side surface of the second metal layer 12 of the first light emitting unit 40a and the side surface of the second metal layer 12 of the second light emitting unit 40b. Thereby, the insulation between the side surface of the 2nd metal layer 12 of the 1st light emission part 40a and the side surface of the 2nd metal layer 12 of the 2nd light emission part 40b can be improved.

  For example, when the interval between the plurality of light emitting units 40 is reduced, the insulating property is likely to deteriorate in the metal layers included in each of the plurality of light emitting units 40. Since the light reflecting resin layer 60 covers the side surfaces of the metal layer included in each of the plurality of light emitting units 40, the insulation between the side surfaces can be improved.

  As illustrated in FIG. 9B, in this example, a part of the light reflecting resin layer 60 is interposed between the substrate 10 of the first mounting substrate unit 15 a of the first light emitting unit 40 a and the heat dissipation member 51. Be placed. Further, a part of the light reflecting resin layer 60 is disposed between the substrate 10 of the second mounting substrate portion 15 b of the second light emitting unit 40 b and the heat radiating member 51. The light reflecting resin layer 60 is filled in a space between the first mounting substrate portion 15a and the second mounting substrate portion 15b. Thereby, insulation can be improved more.

  Furthermore, as illustrated in FIG. 9A, in this example, the light reflecting resin layer 60 covers the outer edge of the substrate 10 included in the plurality of light emitting units 40. Thereby, the utilization efficiency of light can be improved.

  By providing the light reflecting resin layer 60, the interval between the first light emitting unit 40a and the second light emitting unit 40b can be reduced. For example, the distance g1 between the first side surface 10sa of the substrate 10 of the first light emitting unit 40a and the second side surface 10sb of the substrate 10 of the second light emitting unit 40b is 0.5 millimeters (mm) or more and 5 millimeters ( mm) or less. The distance g1 is preferably 1 mm or less.

  In this example, the wavelength conversion layer 31 includes a first wavelength conversion film 31p and a second wavelength conversion film 31q. The first wavelength conversion film 31 p covers the side surface of the semiconductor light emitting element 20. The second wavelength conversion film 31q covers the upper surface of the semiconductor light emitting element 20, and is provided on the first wavelength conversion film 31p. For example, the first wavelength conversion film 31p emits red light. The second wavelength conversion film 31q emits yellow light, for example.

FIG. 10A to FIG. 10D are schematic cross-sectional views illustrating another light emitting device and lighting device according to the fifth embodiment.
In these drawings, the lighting device member 71 is omitted. The configuration described in the first embodiment or the configuration described in the lighting device 221 can be applied to the lighting device member 71 in these examples.

  As shown in FIG. 10A to FIG. 10D, also in the other light emitting devices 121a to 121d (and lighting devices 221a to 221d) according to the present embodiment, the light reflecting resin layer 60 has the first side surface. 10sa and the second side surface 10sb are covered. Further, the light reflecting resin layer 60 covers a part of the first main surface 10a of the substrate 10 of the first light emitting unit 40a and a part of the first main surface 10a of the substrate 10 of the second light emitting unit 40b.

  In the light emitting device 121a (and the lighting device 221a), the light reflecting resin layer 60 is separated from the first metal layer 11 and separated from the second metal layer 12. A part of the light reflecting resin layer 60 is disposed between the substrate 10 of the first mounting substrate portion 15 a and the heat dissipation member 51. Furthermore, a part of the light reflecting resin layer 60 is disposed between the substrate 10 of the second mounting substrate portion 15 b and the heat dissipation member 51.

  In the light emitting device 121b (and the lighting device 221b), the light reflecting resin layer 60 covers a part of the first metal layer 11 and is in contact with a part of the second metal layer 12. A part of the light reflecting resin layer 60 is disposed between the substrate 10 of the first mounting substrate portion 15 a and the heat dissipation member 51. Furthermore, a part of the light reflecting resin layer 60 is disposed between the substrate 10 of the second mounting substrate portion 15 b and the heat dissipation member 51.

  In the light emitting device 121c (and the lighting device 221c), the light reflecting resin layer 60 is separated from the first metal layer 11 and separated from the second metal layer 12. The light reflecting resin layer 60 is disposed between the substrate 10 of the first mounting substrate portion 15a and the heat dissipation member 51, and between the substrate 10 of the second mounting substrate portion 15b and the heat dissipation member 51. Not.

  In the light emitting device 121d (and the lighting device 221d), the light reflecting resin layer 60 covers a part of the first metal layer 11 and a part of the second metal layer 12. The light reflecting resin layer 60 is in contact with the reflecting layer 32. A part of the light reflecting resin layer 60 is disposed between the substrate 10 of the first mounting substrate portion 15 a and the heat dissipation member 51. Furthermore, a part of the light reflecting resin layer 60 is disposed between the substrate 10 of the second mounting substrate portion 15 b and the heat dissipation member 51. The light reflecting resin layer 60 is filled in a space between the first mounting substrate portion 15a and the second mounting substrate portion 15b. Higher insulation and higher reflectivity are obtained.

FIG. 11A and FIG. 11B are schematic views illustrating a light emitting device and a lighting device according to the fifth embodiment.
These drawings illustrate the shape of the heat dissipation member 51 according to the present embodiment. FIG. 11B is a plan view. It is A1-A2 sectional view taken on the line of Fig.11 (a).

  As illustrated in FIG. 11A, the heat dissipation member 51 has first to fourth sides 55a to 55d. For example, the first side 55a extends along the X-axis direction. The second side 55b is separated from the first side 55a and extends along the X-axis direction. The third side 55c connects one end of the first side 55a and one end of the second side 55b. The fourth side 55d is separated from the third side 55c, and connects the other end of the first side 55a and the other end of the second side 55b. In this example, the length of the first side 55a and the length of the second side 55b are each longer than the length of the third side 55c and the length of the fourth side 55d.

  As illustrated in FIG. 11B, the heat dissipation member 51 may be warped. For example, the heat dissipation member 51 and the light emitting unit 40 are bonded at a high temperature. The heat radiating member 51 may warp due to the difference in thermal expansion coefficient.

  Attention is paid to the warpage of the region of the heat dissipating member 51 where the mounting substrate portion 15 is provided. As illustrated in FIG. 11A, the length of the region where the mounting substrate unit 15 is provided is the length La (mm) of one mounting substrate unit 15 and the length Lb ( mm) and the length Lc (mm) of the space between the two, L01 (mm). The length L01 is La + Lb + Lc. The warp C51 of the heat radiating member 51 is a difference in position in the Z-axis direction at the end of this region of the heat radiating member 51. For example, the warpage C51 (mm) of the heat radiating member 51 is a distance in the Z-axis direction between the end of the above region on the lower surface of the heat radiating member 51 and the center of the lower surface of the heat radiating member 51. For example, the warp C51 of the heat radiating member 51 may be a distance in the Z-axis direction between the end of the above region on the upper surface of the heat radiating member 51 and the center of the upper surface of the heat radiating member 51. The warp C51 of the heat dissipating member 51 depends on the size of the region where the mounting substrate portion 15 is provided. The relative warpage RC1 is set to C51 / L01.

  On the other hand, the heat dissipation member 51 has a thickness t51 (mm). The warp of the heat dissipation member 51 depends on the thickness t51 of the heat dissipation member 51. The relative thickness RT1 is set to t51 / L01.

FIG. 12 is a graph illustrating characteristics of the light emitting device and the lighting device according to the fifth embodiment.
FIG. 12 illustrates a simulation result of warpage at 25 ° C. after the heat dissipation member 51 and the light emitting unit 40 are joined at 217 ° C. The heat radiating member 51 and the light emitting unit 40 are joined by a heat conductive layer 52 (for example, solder). The horizontal axis in FIG. 12 represents the relative thickness RT1 of the heat radiating member 51 (heat spreader). The vertical axis is the relative warpage RC1.

  For example, the length L01 of the region where the mounting substrate portion 15 is provided in the heat radiating member 51 is 50 mm. For example, when the relative thickness RT1 is 0.06, the thickness t51 of the heat dissipation member 51 is 3 mm. When the relative thickness RT1 is 0.12, the thickness t51 of the heat radiating member 51 is 6 mm. When the relative warp RC1 is 0.004, the warp C51 is 0.2 mm. For example, when the length L01 of the region where the mounting substrate portion 15 is provided in the heat radiating member 51 is 50 mm, the warp C51 is preferably set to 0.2 mm or less. Thereby, for example, high-efficiency reflection at the reflection portion 73 is obtained. If the warp is excessively large, it is difficult to reflect the light LL in the proper direction by the reflection unit 73. The heat dissipation can also deteriorate. Practically, it is preferable that the relative warp RC1 is 0.004 or less. Thereby, high efficiency by high reflection is obtained.

  From FIG. 12, the relative thickness RT1 is preferably 0.06. As the relative thickness RT1 increases, the change in the relative warp RC1 decreases. The relative thickness RT1 may be 0.12 or less. When the relative thickness RT1 exceeds 0.12, the material usage of the heat dissipation member 51 increases excessively.

  Therefore, in the present embodiment, the relative thickness RT1 is preferably 0.06 or more and 0.12 or less. That is, the thickness of the heat dissipation member 51 is preferably 0.06 times or more and 0.12 times or less the length L01 of the region of the heat dissipation member 51 where the mounting substrate portion 15 is provided.

  In general, when a plurality of COB modules are mounted on a heat spreader in an LED module, the interval between the COB modules is set to a certain value or more due to mounting restrictions. For this reason, the size of the LED module is increased, and the reflecting mirror and the outer size are increased. And in the clearance gap formed between COB modules, a reflectance is low and, therefore, a reflection loss arises.

  On the other hand, a high-power COB module used in a projector or the like preferably has a small light emitting area and a high light emission density in order to satisfy the light distribution characteristics. However, as the light emission density increases, the temperature at the center of the light emitting region becomes higher. In a configuration in which a heat spreader is connected to each of a plurality of COB modules, temperature variations may occur in each of the plurality of COB modules.

  In the present embodiment, a heat spreader and a plurality of COB modules are combined, and, for example, a white insulating resin (light reflecting resin layer 60) is provided in a region between the plurality of COB modules. Thereby, for example, the creepage distance of the wiring board can be reduced. Thereby, the size of the light emitting device can be reduced.

  And the light reflection loss can be reduced by making the reflectance of white insulating resin 70% or more.

  By combining one heat spreader and a plurality of COB modules, for example, the maximum temperature of the COB module can be suppressed. The temperature in a plurality of COB modules can be made uniform. And a light emitting device can be made small.

  In the present embodiment, for example, solder is used as the heat conductive layer 52. Thereby, for example, heat dissipation can be improved.

  In the present embodiment, by setting the relative thickness RT1 to 0.015 or more and 0.03 or less, for example, the heat spreader effect can be increased. And the curvature in a light-emitting device can be reduced.

(Sixth embodiment)
FIG. 13A to FIG. 13F are schematic cross-sectional views illustrating a light emitting device and a lighting device according to the sixth embodiment.
FIG. 13A is a plan view of the light emitting device 131 and the illumination device 231 according to this embodiment. FIG. 13B is a plan view of the heat radiating member 51 included in the light emitting device 131. 13th (c) is a plan view of the mounting board portion 15 included in the light emitting device 131. 13 (d), 13 (e), and 13 (f) are respectively a cross-sectional view taken along line A1-A2, a cross-sectional view taken along line A3-A4, and a cross-sectional view taken along line A5-A6 in FIG. 13 (a). is there.

As illustrated in FIG. 13A, the lighting device 231 according to this embodiment includes a light emitting device 131 and a lighting device member 71. Also in this example, the light emitting device 131 includes the heat dissipation member 51, the heat conductive layer 52, and the light emitting unit 40. Also in this embodiment, by setting the ratio Rs to 5 above, when the light beam divergence 10 lm / mm ² or more 100lm / mm ² or less and the luminous emittance is higher, the heat dissipation property of the light emitting device can be provided with improved.

  As shown in FIG. 13B, FIG. 13D, and FIG. 13F, the first surface (upper surface 51u) of the heat radiating member 51 that faces the second main surface 10b has irregularities 51p.

  As shown in FIG. 13B, for example, the unevenness 51p on the first surface (upper surface 51u) includes a plurality of first grooves 51pa. The multiple first grooves 51pa extend, for example, in the X-axis direction (for example, a first direction parallel to the second major surface 10b). In this example, the unevenness 51p on the first surface (upper surface 51u) further includes a plurality of second grooves 51pb. The multiple second grooves 51pb extend, for example, in the Y-axis direction (for example, parallel to the second major surface 10b and intersecting the first direction). In this example, the second direction is perpendicular to the first direction. In the embodiment, the angle between the first direction and the second direction is arbitrary.

  As illustrated in FIG. 13A, in this example, the outer edge 51pe when the region 51pr provided with the unevenness 51p in the first surface (upper surface 51u) is projected onto the second main surface 10b is the substrate. 10 is located on the outer side of the outer edge (for example, the outer edge 10r of the first main surface 10a) when projected onto the second main surface 10b.

  As shown in FIG. 13C, FIG. 13D, and FIG. 13F, in this example, the second surface (lower surface 12l) of the second metal layer 12 that faces the heat radiating member 51 is uneven 12p. Have

  The unevenness 12p on the second surface (lower surface 12l) includes a plurality of third grooves 12pa. The multiple third grooves 12pa extend, for example, in the X-axis direction (for example, a third direction parallel to the second major surface 10b). In this example, the unevenness 12p on the second surface (lower surface 12l) further includes a plurality of fourth grooves 12pb. The plurality of fourth grooves 12pb extends, for example, in the Y-axis direction (for example, a fourth direction parallel to the second major surface 10b and intersecting the third direction). In this example, the fourth direction is perpendicular to the third direction. In the embodiment, the angle between the third direction and the fourth direction is arbitrary. The angle between the third direction and the first direction, the angle between the third direction and the second direction, the angle between the fourth direction and the first direction, and the fourth direction and the second direction. The angle between and is arbitrary.

  The embodiment is not limited to the above, and the unevenness 51p may include, for example, a plurality of independent convex portions and concave portions. The unevenness 51p may include, for example, a plurality of independent concave portions and convex portions. The unevenness 12p may include, for example, a plurality of independent convex portions and concave portions. The unevenness 12p may include, for example, a plurality of independent concave portions and convex portions.

  In the embodiment, at least one of the unevenness 51p of the heat dissipation member 51 and the unevenness 12p of the second metal layer 12 may be provided.

  The heat conductive layer 52 (for example, solder) is filled in the recesses of the unevenness 51p and the recesses of the unevenness 12p. By providing the unevenness, the stress is further relaxed.

  For example, heat is generated in the light emitting unit 40. For example, the light emission efficiency (lm / W) in the semiconductor light emitting element 20 is reduced by the generated heat. When the input power is increased, the temperature of the light emitting device (for example, the temperature of the semiconductor light emitting element 20) may increase to a value higher than the specification value of the environmental temperature of the light emitting device.

  In order to improve heat dissipation, for example, there is a structure in which the back surface of the COB and the heat radiating plate (heat radiating member 51) are joined by solder (thermal conductive layer 52). In this structure, stress is applied to the solder due to the difference in coefficient of thermal expansion among the COB, the heat sink, and the solder. As a result, cracks may occur in the solder and reliability may be reduced. Although there is a method of joining the COB and the heat sink via a material having a small deformation resistance, it is difficult to obtain a good solder joint. Furthermore, with this method, the strain generated at the joint remains large. For this reason, when the COB or the heat sink is warped, the strain is concentrated, and cracks are likely to occur from the portion where the strain is concentrated.

  On the other hand, in the present embodiment, at least one of the unevenness 51p of the heat dissipation member 51 and the unevenness 12p of the second metal layer 12 is provided. By providing the unevenness, the stress generated in the solder (thermal conductive layer 52) is relaxed, and the strain can be reduced. For example, the stress in the XY plane is relieved by at least one of the unevenness 51p and the unevenness 12p. Thereby, reliability can be improved.

  Furthermore, by providing the unevenness 51p, the contact area between the heat dissipation member 51 and the heat conductive layer 52 (for example, solder) is expanded. By providing the unevenness 12p, the contact area between the second metal layer 12 and the heat conductive layer 52 (for example, solder) is expanded. Thereby, heat dissipation improves.

  Thus, stress can be relieved by providing irregularities on at least one of the surface of the COB and the surface of the heat sink. Furthermore, in the joining by solder, a joining area can be increased and heat dissipation is improved.

FIG. 14A to FIG. 14G are schematic cross-sectional views illustrating the light emitting device according to the sixth embodiment.
These drawings are cross-sectional views of the heat dissipation member 51 according to the embodiment cut along a plane including the Z-axis direction.

  In the example shown in FIG. 14A and FIG. 14B, the unevenness 51p provided on the upper surface 51u of the heat dissipation member 51 has a recess 51pd. Recess 51pd has a bottom surface portion (heat radiation member bottom surface portion 51qb) and a side surface portion (heat radiation member side surface portion 51qa). The side surface portion (heat radiating member side surface portion 51qa) intersects the second main surface 10b (that is, the XY plane). In these examples, the cross section of the heat radiating member 51 has two heat radiating member side surface portions 51qa, and the cross section of the portion where the two heat radiating member side surface portions 51qa intersect (heat radiating member bottom surface portion 51qb) is triangular.

  In the example shown in FIG. 14A, the convex portion 51pp of the upper surface 51u of the heat radiating member 51 has a planar shape substantially parallel to the XY plane. In the example shown in FIG. 14B, the cross section of the convex portion 51pp of the upper surface 51u of the heat radiating member 51 is triangular.

  Also in the example shown in FIG. 14C and FIG. 14D, the recess 51pd of the heat dissipation member 51 has a bottom surface portion (heat dissipation member bottom surface portion 51qb) and a side surface portion (heat dissipation member side surface portion 51qa). ing. In these examples, the heat dissipation member bottom surface portion 51qb has a planar shape substantially parallel to the XY plane.

  In the example shown in FIG. 14C, the convex portion 51pp of the upper surface 51u of the heat radiating member 51 has a planar shape substantially parallel to the XY plane. In the example shown in FIG. 14D, the cross section of the convex portion 51pp on the upper surface 51u of the heat dissipation member 51 is triangular.

  In the example shown in FIG. 14E, FIG. 14F, and FIG. 14G, the recess 51pd of the heat radiation member 51 includes a bottom surface portion (heat radiation member bottom surface portion 51qb) and a side surface portion (heat radiation member side surface portion 51qa). ) And a corner portion (heat dissipating member corner portion 51qc). The heat dissipating member corner 51qc connects the heat dissipating member bottom 51qb and the heat dissipating member side 51qa and has a curved surface shape.

  In the example shown in FIG. 14E, the convex portion 51pp of the upper surface 51u of the heat radiating member 51 has a planar shape substantially parallel to the XY plane. In the example shown in FIG. 14F, the convex portion 51pp of the upper surface 51u of the heat dissipation member 51 has a curved surface shape. In the example shown in FIG. 14G, the convex portion 51pp of the upper surface 51u of the heat radiating member 51 is a planar shape substantially parallel to the XY plane, and the heat radiating member bottom surface portion 51qb is XY. It is a planar shape substantially parallel to the plane.

  In the embodiment, it is preferable to provide a curved heat radiation member corner portion 51qc. Thus, the edge part (corner part) of the recessed part 51pd (for example, groove | channel) is made into a curved surface shape. Thereby, it can suppress that stress concentrates on the edge part of recessed part 51pd of the thermal radiation member 51. FIG. When the edge portion is a non-curved surface, the edge portion becomes a starting point of the crack, and the crack is easily generated. The occurrence of cracks can be further suppressed by making the edge portion curved.

FIG. 15A to FIG. 15G are schematic cross-sectional views illustrating the light emitting device according to the sixth embodiment.
These drawings are cross-sectional views of the second metal layer 12 according to the embodiment cut along a plane including the Z-axis direction.

  In the example shown in FIGS. 15A and 15B, the unevenness 12p provided on the lower surface 12l of the second metal layer 12 has a recess 12pd. The recess 12pd has a bottom surface portion (second metal layer bottom surface portion 12qb) and a side surface portion (second metal layer side surface portion 12qa). The side surface portion (second metal layer side surface portion 12qa) intersects the second main surface 10b (that is, the XY plane). In these examples, the cross section of the second metal layer 12 has two second metal layer side surface portions 12qa, and a portion (second metal layer bottom surface portion 12qb) where the two second metal layer side surface portions 12qa intersect each other. The cross section is triangular.

  In the example shown in FIG. 15A, the convex portion 12pp of the lower surface 12l of the second metal layer 12 has a planar shape substantially parallel to the XY plane. In the example shown in FIG. 15B, the cross section of the convex portion 12pp of the lower surface 12l of the second metal layer 12 is triangular.

  In the example shown in FIG. 15C and FIG. 15D, the recess 12pd of the second metal layer 12 includes a bottom surface portion (second metal layer bottom surface portion 12qb) and a side surface portion (second metal layer side surface portion 12qa). ) And. In these examples, the second metal layer bottom surface portion 12qb has a planar shape substantially parallel to the XY plane.

  In the example shown in FIG. 15C, the convex portion 12pp of the lower surface 12l of the second metal layer 12 has a planar shape substantially parallel to the XY plane. In the example shown in FIG. 15D, the cross section of the convex portion 12pp of the lower surface 12l of the second metal layer 12 is triangular.

  In the example shown in FIG. 15E, FIG. 15F, and FIG. 15G, the recess 12pd of the second metal layer 12 includes a bottom surface portion (second metal layer bottom surface portion 12qb) and a side surface portion (first metal layer). 2 metal layer side surface portion 12qa) and a corner portion (second metal layer corner portion 12qc). The second metal layer corner portion 12qc connects the second metal layer bottom surface portion 12qb and the second metal layer side surface portion 12qa and has a curved surface shape.

  In the example shown in FIG. 15E, the convex portion 12pp of the lower surface 12l of the second metal layer 12 has a planar shape substantially parallel to the XY plane. In the example shown in FIG. 15F, the convex portion 12pp of the lower surface 12l of the second metal layer 12 has a curved surface shape. In the example shown in FIG. 15G, the convex portion 12pp of the lower surface 12l of the second metal layer 12 is a planar shape substantially parallel to the XY plane, and the second metal layer bottom surface portion 12qb is , Which is a plane substantially parallel to the XY plane.

  In the embodiment, it is preferable to provide the curved second metal layer corner portion 12qc. Thus, the edge part (corner part) of the recessed part 12pd (for example, groove | channel) is made into a curved surface shape. Thereby, it can suppress that stress concentrates on the edge part of the recessed part 12pd of the 2nd metal layer 12. FIG. Thereby, generation | occurrence | production of a crack can be suppressed more.

  In the embodiment, the shape of a recess (for example, a groove) (a cross-sectional shape when cut along a plane including the Z-axis direction) can be, for example, a triangle, a trapezoid, or a circle (oval). And when a shape is a triangle shape or trapezoid shape, it is preferable to make a corner part into a curved surface shape.

  The depth d51 of the unevenness 51p provided on the first surface (upper surface 51u) of the heat radiating member 51 is preferably not more than 1/10 times the thickness t51 of the heat radiating member 51 (see FIG. 14G). By setting the depth d51 to 1/10 times or less of the thickness t51, for example, generation of voids in the solder (thermal conductive layer 52) can be suppressed. Furthermore, the amount of solder used can be suppressed, and an increase in cost can be suppressed. When a higher effect is desired, 1/20 or less is desirable. The depth d51 is preferably at least 1/1000 times the thickness t51 of the heat dissipation member 51. Thereby, a stress can be suppressed effectively and the improvement of the heat dissipation by the increase in a contact area is obtained effectively.

  On the other hand, the depth d12 of the unevenness 12p provided on the second surface (lower surface 12l) of the second metal layer 12 is preferably ½ times or less the thickness t12 of the second metal layer 12 (FIG. 15 ( g)). By setting the depth d12 to be equal to or less than ½ times the thickness t12, for example, generation of voids in the solder (thermal conductive layer 52) can be suppressed. Furthermore, the amount of solder used can be suppressed, and an increase in cost can be suppressed. The depth d12 is preferably at least 1/100 times the thickness t12 of the second metal layer 12. Thereby, a stress can be suppressed effectively and the improvement of the heat dissipation by the increase in a contact area is obtained effectively.

For example, the groove pitch is preferably at least twice the groove depth.
For example, the pitch of the plurality of recesses 51pd of the heat dissipation member 51 is preferably at least twice the depth of the recesses 51pd. For example, the distance between the bottom surface portions (heat radiation member bottom surface portions 51qb) of the plurality of adjacent recess portions 51pd is along the Z-axis direction between the convex portion 51pp of the recess 52pd and the bottom surface portion (heat radiation member bottom surface portion 51pb). The distance is preferably twice or more of the distance. Thereby, the shape (groove shape) of the recess 51pd is easily stabilized. More preferably, the pitch is at least 10 times the depth. Thereby, the shape of a recessed part (groove) tends to become uniform.

  For example, the pitch of the plurality of recesses 12pd of the second metal layer 12 is preferably at least twice the depth of the recesses 12pd. For example, the distance between the bottom surface portions (second metal layer bottom surface portion 12qb) of the plurality of adjacent recesses 12pd is Z between the convex portion 12pp of the recess 12pd and the bottom surface portion (second metal layer bottom surface portion 12pb). It is preferably at least twice the distance along the axial direction. Thereby, the shape of the recess 12pd (the shape of the groove) is easily stabilized. More preferably, the pitch is at least 10 times the depth. Thereby, the shape of a recessed part (groove) tends to become uniform.

In the embodiment, the distance between the grooves is preferably equal to or greater than the groove depth.
For example, the distance between the plurality of recesses 51pd of the heat dissipation member 51 is preferably at least twice the depth of the recesses 51pd. For example, the width (the distance in the direction perpendicular to the Z-axis direction) of the convex portions 51pp of the plurality of adjacent concave portions 51pd is between the convex portion 51pp of the concave portion 52pd and the bottom surface portion (heat radiation member bottom surface portion 51pb). It is preferable that it is more than the distance along the Z-axis direction. Thereby, the void (void generated in the solder) in the recess 51pd is suppressed. If the distance between the grooves is too short, voids tend to remain.

  For example, the distance between the plurality of recesses 12pd of the second metal layer 12 is preferably equal to or greater than the depth of the recess 12pd. For example, the width (the distance in the direction perpendicular to the Z-axis direction) of the convex portions 12pp of the plurality of adjacent concave portions 12pd is the convex portion 12pp of the concave portion 12pd, the bottom surface portion (second metal layer bottom surface portion 12pp), It is preferable that it is more than the distance along the Z-axis direction between. Thereby, the void in the recessed part 12pd is suppressed. If the distance between the grooves is too short, voids tend to remain.

  In the present embodiment, for example, a ceramic substrate is used as the substrate 10. Thereby, high insulation can be obtained simultaneously with high thermal conductivity. At this time, solder is used for the heat conductive layer 52. Thereby, high thermal conductivity is obtained.

  When a ceramic substrate is used as the substrate 10 and a metal is used as the heat conductive layer 52, a large difference in coefficient of thermal expansion occurs. At this time, in this embodiment, stress can be effectively relieved by providing unevenness.

  For example, a copper layer is used for the second metal layer 12. Thereby, even when solder is used as the heat conductive layer 52, good bonding can be obtained. The selection range of solder materials is expanded, and the condition range of the joining process is expanded. As the second metal layer 12, for example, aluminum may be used. In this case, the solder material is likely to be limited, and the conditions for the joining process are likely to be limited. The thermal conductivity of copper is higher than that of aluminum. By using a copper layer for the second metal layer 12, higher heat dissipation can be obtained.

  As already described, the outer edge 51pe of the first surface (upper surface 51u) when the region 51pr provided with the unevenness 51p is projected onto the second main surface 10b projects the light emitting region onto the second main surface 10b. It is preferable to be located outside the outer edge. Thereby, the effect of stress relaxation is acquired. More desirably, the substrate 10 is positioned outside the outer edge (for example, the outer edge 10r of the first main surface 10a) when the substrate 10 is projected onto the second main surface 10b. Generation of cracks can be more effectively suppressed by widening the region where the unevenness is provided.

(Seventh embodiment)
FIG. 16 is a schematic cross-sectional view illustrating the light emitting device and the lighting device according to the seventh embodiment.
As illustrated in FIG. 16, the illumination device 241 according to the present embodiment includes a light emitting device 141 and an illumination device member 71. The light emitting device 141 includes a heat radiating member 51, a heat conductive layer 52, and a light emitting unit 40. In this example, for example, by the ratio Rs to 5 above, when the light beam divergence is high 10 lm / mm ² or more 100lm / mm ² or less and the luminous emittance also, the light emitting device with an improved heat dissipation property is provided it can.

  Also in this example, the light emitting element part 35 of the light emitting part 40 includes the plurality of semiconductor light emitting elements 20 and the wavelength conversion layer 31. In this example, a reflective layer 32 is further provided.

  Each of the plurality of semiconductor light emitting elements 20 (for example, the first semiconductor light emitting element 20a and the second semiconductor light emitting element 20b) is opposite to the semiconductor light emitting element lower surface 20l facing the first main surface 10a and the semiconductor light emitting element lower surface 20l. Side semiconductor light emitting element upper surface 20u. The semiconductor light emitting element upper surface 20 u is the upper surface of the semiconductor light emitting element 20.

  On the other hand, the wavelength conversion layer 31 has a wavelength conversion layer lower surface 31l in contact with the semiconductor light emitting element upper surface 20u and a wavelength conversion layer upper surface 31u opposite to the wavelength conversion layer lower surface 31l. The wavelength conversion layer upper surface 31 u is the upper surface of the wavelength conversion layer 31.

  In the present embodiment, the Z-axis direction (first order) between the upper surface of one of the plurality of semiconductor light emitting elements 20 (semiconductor light emitting element upper surface 20u) and the upper surface of the wavelength conversion layer 31 (wavelength conversion layer upper surface 31u). The distance t31 in the direction perpendicular to the first principal surface 10a is not less than 100 μm and not more than 300 μm.

  Thereby, while high efficiency is obtained, high thermal conductivity is obtained in the wavelength conversion layer 31, and a temperature rise can be suppressed. As a result, the lifetime can be extended.

  For example, the specification value of the light emitting device according to the embodiment is, for example, the correlated color temperature is 5000 K (Kelvin), the color rendering index is 70, and the luminous efficiency is, for example, 100 lm / kg when the package temperature is 90 ° C. W. That is, the luminous flux divergence is high. In the light emitting device, a large number of LED chips are mounted. A wavelength conversion layer 31 is provided around the LED chip. Light including blue color is emitted from the LED chip. In the wavelength conversion layer 31, excitation occurs with blue light, for example, yellow light is emitted, and white light is obtained. The wavelength conversion layer 31 is designed so that white light is appropriately obtained when synthesized with blue light.

  The wavelength conversion layer 31 includes a resin (light transmissive resin 31b) and a plurality of phosphor particles (wavelength conversion particles 31a) dispersed in the resin (see FIG. 5). When the wavelength conversion layer 31 is thick (for example, the distance t31), the concentration of the phosphor particles is set low so that appropriate light conversion characteristics can be obtained. Conversely, when the wavelength conversion layer 31 is thin (for example, distance t31), the concentration of the phosphor particles is set high.

  The thermal conductivity of the resin is lower than the thermal conductivity of the phosphor particles. For this reason, when the density | concentration of a fluorescent substance particle is low, the thermal conductivity of the wavelength conversion layer 31 will become low. When the concentration of the phosphor particles is high, the thermal conductivity of the wavelength conversion layer 31 is increased.

  When the distance t31 is excessively large, for example, exceeds 500 μm, the concentration of the phosphor particles is set too low. For this reason, the thermal conductivity in the wavelength conversion layer 31 is low, and the temperature of the wavelength conversion layer 31 is excessively increased by the heat generated in the semiconductor light emitting element 20 and the heat generated in the wavelength conversion layer 31. Thereby, the lifetime of the wavelength conversion layer 31 is shortened.

  In the present embodiment, the distance t31 is set to 300 μm or less. Thereby, the density | concentration of a fluorescent substance particle becomes an appropriate value, and the heat conductivity in the wavelength conversion layer 31 can be made low. Thereby, the rise in temperature can be suppressed and, for example, the lifetime of the wavelength conversion layer 31 can be extended.

  For example, by setting the distance t31 to 300 μm or less, it is possible to form a state in which some phosphor particles are in contact with each other in the wavelength conversion layer 31. And the number of the fluorescent substance particles which contact | connects the board | substrate 10 and LED chip (semiconductor light emitting element 20) increases. Thereby, the heat generated in the phosphor particles when the wavelength changes is easily transmitted to the substrate 10 or the LED chip.

  On the other hand, when the thickness (for example, distance t31) of the wavelength conversion layer 31 is excessively thin, the density of the phosphor particles in the wavelength conversion layer 31 increases. That is, the distance between the plurality of phosphor particles is shortened. For this reason, for example, the probability that light emitted from one phosphor particle is absorbed (reabsorbed) by another phosphor particle located near the phosphor particle is increased. That is, if the density of the phosphor particles is excessively high, the light emission efficiency decreases.

  In the present embodiment, the concentration of the phosphor particles in the wavelength conversion layer 31 is appropriate by setting the distance t31 to 100 μm or more. Thereby, reabsorption is suppressed and high luminous efficiency is obtained.

  In the present embodiment, the LED chip (semiconductor light emitting element 20) has, for example, a flip chip structure. The substrate 10 includes ceramic. In the case of the flip chip structure, heat accompanying light emission due to the coupling of carriers is mainly transmitted to the substrate 10 side. For this reason, in the ceramic substrate 10, heat can be radiated effectively, and the temperature rise of the LED chip is suppressed.

  The COB module is connected to a heat radiating member 51 (heat spreader) by a heat conductive layer 52 such as conductive grease or solder. Thereby, the heat from the LED chip can be efficiently conducted and dispersed. Thereby, an output can be made high. Furthermore, for example, since a heat conduction path to the heat radiating member 51 can be formed, the temperature of the wavelength conversion layer 31 can be kept low.

  Thereby, for example, the temperature of the wavelength conversion layer 31 can be kept low in a COB module having a high luminous efficiency of 25 lm / W or more. Thereby, a lifetime can be lengthened.

  For example, an LED chip having a length of 1 mm in the X-axis direction, a length of 1 mm in the Y-axis direction, and a thickness (length in the Z-axis direction) of 0.4 mm is used as the semiconductor light emitting element 20. A plurality of semiconductor light emitting elements 20 are disposed on the first metal layer 11 of the mounting substrate portion 15. A reflective layer 32 is formed around the plurality of semiconductor light emitting elements 20. The inner width (inner diameter) of the reflective layer 32 is about 19 mm. A wavelength conversion layer 31 is formed so as to cover the semiconductor light emitting element 20 in a region surrounded by the reflective layer 32. For example, dimethyl silicone is used for the resin of the wavelength conversion layer 31. A plurality of phosphor particles are dispersed in this resin. The concentration of phosphor particles is about 17 weight percent. The height of the wavelength conversion layer 31 (the distance along the Z-axis direction between the first main surface 10a of the substrate 10 and the upper surface of the wavelength conversion layer 31 (wavelength conversion layer upper surface 31u)) is about 650 μm. . The correlated color temperature of the combined light of the blue light emitted from the LED chip and the light emitted from the wavelength conversion layer 31 is about 5000K. That is, the wavelength conversion layer 31 is adjusted so that white light is obtained. The distance t31 is 150 μm. Such a light emitting device is referred to as a fourth sample.

  On the other hand, a light emitting device in which the concentration of the phosphor particles is about 8 weight percent is taken as a fifth sample. In the fifth sample, the distance t31 is 500 μm. Also in the fifth sample, the correlated color temperature of the combined light of the blue light emitted from the LED chip and the light emitted from the wavelength conversion layer 31 is about 5000K. The conditions other than the concentration of the phosphor particles and the distance t31 in the fifth sample are the same as those in the fourth sample.

  In the fourth sample and the fifth sample, the light emitting unit 40 is joined to the heat radiating member 51 through the heat conductive layer 52 of solder.

  The fourth sample and the fifth sample are turned on, and the temperature of the wavelength conversion layer 31 is measured. In the fifth sample, the temperature of the surface of the wavelength conversion layer 31 (wavelength conversion layer upper surface 31u) is 130 ° C. On the other hand, in the fourth sample, the temperature of the surface of the wavelength conversion layer 31 (wavelength conversion layer upper surface 31u) is 110 ° C. Thus, the temperature rise of the wavelength conversion layer 31 can be suppressed by setting the distance t31 appropriately.

FIG. 17A to FIG. 17C are schematic cross-sectional views illustrating another light emitting device and lighting device according to the seventh embodiment.
As shown in FIG. 17A, in another light emitting device 142 (and lighting device 242) according to this embodiment, the wavelength conversion layer 31 is provided between the semiconductor light emitting element 20 and the substrate 10. Not. On the other hand, in the light emitting device 141 (and the lighting device 241), the wavelength conversion layer 31 is also provided between the semiconductor light emitting element 20 and the substrate 10. By filling the space between the semiconductor light emitting element 20 and the substrate 10 with the wavelength conversion layer 31, for example, thermal conductivity can be improved.

  As shown in FIG. 17B and FIG. 17C, in another light emitting device 143 (and lighting device 243) according to the present embodiment, in the region between the plurality of semiconductor light emitting elements 20, the wavelength The upper surface of the conversion layer 31 (wavelength conversion layer upper surface 31u) is concave. This concave shape is generated, for example, when the wavelength conversion layer 31 flows into the space between the semiconductor light emitting element 20 and the mounting substrate portion 15. Thus, when a part of upper surface of the wavelength conversion layer 31 is concave shape, let the distance t31 be the flat surface of the wavelength conversion layer 31.

FIG. 18A to FIG. 18C are schematic cross-sectional views illustrating another light emitting device and lighting device according to the seventh embodiment.
As shown in FIG. 18A, in another light emitting device 144 (and illumination device 244) according to this embodiment, the surface of the wavelength conversion layer 31 (in this example, the wavelength conversion layer upper surface 31u) has unevenness 31r. Is provided. The depth of the unevenness 31r is, for example, not less than 0.5 times and not more than 5 times the wavelength of light emitted from the wavelength conversion layer 31. The light extraction efficiency from the wavelength conversion layer 31 can be improved by the unevenness 31r.

  As shown in FIG. 18B, in another light emitting device 145 (and lighting device 245) according to this embodiment, the surface of the wavelength conversion layer 31 is a hemisphere that covers the semiconductor light emitting element 20. Then, unevenness 31 r is provided on the surface of the wavelength conversion layer 31. The light extraction efficiency from the wavelength conversion layer 31 can be improved by the unevenness 31r.

  As shown in FIG. 18C, in another light emitting device 146 (and lighting device 246) according to the present embodiment, the surface (upper surface) of the wavelength conversion layer 31 is between the plurality of semiconductor light emitting elements 20. Concave at the part. The concave portion 31r is formed by the concave portion. The light extraction efficiency from the wavelength conversion layer 31 can be improved by the unevenness 31r.

  The light emitting device according to each of the above embodiments can be used as an illumination device such as a projector.

  According to the embodiment, a light emitting device and an illumination device with improved heat dissipation are provided.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

  The embodiments of the present invention have been described above with reference to specific examples. However, embodiments of the present invention are not limited to these specific examples. For example, a light emitting unit, a mounting substrate unit, a light emitting element unit, a substrate, a first metal layer, a second metal layer, a semiconductor light emitting device, a wavelength conversion layer, a reflective layer, a heat radiating member, a heat conducting layer, and light reflection included in the light emitting device The specific configuration of each element such as the resin layer and the lighting device member, the lighting device connecting member, the base portion, and the reflection portion included in the lighting device is appropriately selected by a person skilled in the art from a known range. Are included in the scope of the present invention as long as they can be carried out in the same manner and the same effects can be obtained.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all light-emitting devices and lighting devices that can be implemented by those skilled in the art based on the above-described light-emitting devices and lighting devices as embodiments of the present invention also include the gist of the present invention. It belongs to the scope of the present invention.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 10 ... Board | substrate, 10a ... 1st main surface, 10b ... 2nd main surface, 10r ... Outer edge, 10sa ... 1st side surface, 10sb ... 2nd side surface, 10ue ... Edge part, 11 ... 1st metal layer, 11a ... 1st 11ar ... outer edge, 11b ... second mounting part, 11br ... outer edge, 11c ... third mounting part, 11g ... position, 11p ... mounting pattern, 11pa ... first mounting pattern, 11pb ... second mounting pattern, 11s ... Side surface, 11su ... corner portion, 11u ... upper surface, 12 ... second metal layer, 12l ... lower surface, 12p ... unevenness, 12pa ... third groove, 12pb ... fourth groove, 12pd ... concave portion, 12pp ... convex portion, 12qa ... first 2 metal layer side surface parts, 12qb ... 2nd metal layer bottom face part, 12qc ... 2nd metal layer corner part, 12r ... Outer edge, 13a ... Copper layer, 13b ... Nickel layer 13c ... Palladium layer, 13d ... Gold layer, 14a ... Copper layer, 14b ... Nickel layer, 14c ... Palladium layer, 14d ... Gold layer, 15 ... Mounting board part, 15a ... First mounting board part, 15b ... Second mounting Substrate part 16 ... mounting region 16r ... outer edge 16x, 16y ... width 17 ... peripheral region 17xa, 17xb, 17ya, 17yb ... distance 20 ... semiconductor light emitting device 20a ... first semiconductor light emitting device 20b ... first 2 semiconductor light emitting elements, 20c ... third semiconductor light emitting element, 20d ... fourth semiconductor light emitting element, 20l ... lower surface of semiconductor light emitting element, 20u ... upper surface of semiconductor light emitting element, 21 ... first semiconductor layer, 21a ... first semiconductor portion, 21b 2nd semiconductor part, 21e ... 1st joining metal member, 22 ... 2nd semiconductor layer, 22e ... 2nd joining metal member, 23 ... Light emitting layer 26a, 26b ... part, 31 ... wavelength conversion layer, 31a ... wavelength conversion particle, 31b ... light transmissive resin, 31l ... bottom surface of wavelength conversion layer, 31p ... first wavelength conversion film, 31q ... second wavelength conversion film, 31r ... Concavity and convexity, 31u: wavelength conversion layer upper surface, 32: reflection layer, 35 ... light emitting element portion, 35u ... upper surface, 40 ... light emitting portion, 40a ... first light emitting portion, 40b ... second light emitting portion, 40c ... third light emitting portion 40d: 4th light emission part, 44 ... Connection part, 44c ... Wiring pattern, 45 ... 1st connector, 45e ... 1st connector electrode part, 45u ... Upper surface, 46 ... 2nd connector, 46e ... 2nd connector electrode part 46u ... upper surface, 51 ... heat dissipation member, 51p ... irregularities, 51pa ... first groove, 51pb ... second groove, 51pd ... concave portion, 51pe ... outer edge, 51pp ... convex portion, 51pr ... Area, 51qa ... Radiation member side face part, 51qb ... Radiation member bottom face part, 51c ... Radiation member corner part, 51r ... Edge part, 51u ... Top face, 52 ... Thermal conduction layer, 53 ... Lighting device connection member, 55a-55d ... 1st to 4th side, 60 ... light reflecting resin layer, 71 ... lighting device member, 72 ... base part, 73 ... reflecting part, θ ... angle, 110, 111, 121, 121a-121d, 131, 141-145 ... Light emitting device 210, 211, 221, 221a to 221d, 231, 241-246 ... Illuminating device, C51 ... Warpage, D1 ... Extension direction, D2 ... Transverse direction, Eff ... Luminous efficiency, L1, L2 ... Distance, La, Lb, Lc ... distance, LL ... light, RC1 ... relative warpage, RT1 ... relative thickness, Rs ... ratio, d12, d51 ... depth, g1 ... distance, h35, h 45, h46 ... distance, t10, t11, t12, t20, t31, t51, t52 ... thickness, tg ... distance, w1, w2, w20, w3 ... width

Claims (15)

An insulating substrate having a first main surface including a mounting region and a second main surface opposite to the first main surface;
A first metal layer provided on the first main surface, the first metal layer including a plurality of mounting patterns provided in the mounting region;
Provided on the second main surface and electrically insulated from the first metal layer, and when projected onto a first plane parallel to the first main surface, at least a portion thereof overlaps the mounting region. A second metal layer;
A mounting board including
A plurality of semiconductor light emitting elements provided on the first main surface, wherein each of the plurality of semiconductor light emitting elements includes any one of the plurality of mounting patterns and the plurality of mounting patterns. Another mounting pattern adjacent to any one of the plurality of semiconductor light emitting elements electrically connected,
A wavelength that covers at least part of the plurality of semiconductor light emitting elements, absorbs at least part of the first light emitted from the plurality of semiconductor light emitting elements, and emits second light having a wavelength different from the wavelength of the first light. A conversion layer;
A light emitting element section including a light emitting element portion luminous emittance of the light emitted from the light emitting element portion is 10 lm / mm ² or more 100lm / mm ² or less,
A light emitting unit including
A heat dissipating member facing the second main surface, the heat dissipating member having an area of 5 times or more the area of the mounting region when projected onto the first plane;
A heat conductive layer provided between the heat dissipation member and the second metal layer;
A light emitting device comprising: The first main surface further includes a peripheral region provided around the mounting region,
The light emitting device according to claim 1, wherein an area of the peripheral region is four times or more an area of the mounting region.   The distance between the end of the first main surface and the mounting region along the direction parallel to the first main surface and passing through the center of the mounting region is the mounting along the direction passing through the center. The light-emitting device according to claim 1, wherein the light-emitting device has a width equal to or greater than ½ of the width of the region. The first metal layer is
A first connector electrode portion connected to one of the plurality of mounting patterns;
A second connector electrode portion connected to another one different from the one of the plurality of mounting patterns;
Further including
The light emitting unit
A first connector provided on the first main surface and electrically connected to the first connector electrode portion;
A second connector provided on the first main surface and electrically connected to the second connector electrode portion;
Further including
The light-emitting device according to claim 1, wherein the light-emitting element unit is disposed between the first connector and the second connector. The wavelength conversion layer is
A plurality of wavelength converting particles that absorb at least a portion of the first light and emit the second light;
A light transmissive resin in which the plurality of wavelength conversion particles are dispersed,
The light emitting device according to any one of claims 1 to 4, wherein Shore A of the light transmissive resin is 15 or more and 50 or less. Each of the plurality of semiconductor light emitting elements is
A first semiconductor portion, and a second semiconductor portion aligned with said first semiconductor portion in the direction crossing the stacking direction toward the light emitting portion from the heat dissipation member, and a first semiconductor layer of including a first conductivity type ,
A second semiconductor layer of a second conductivity type provided between the second semiconductor portion and the mounting substrate portion;
A light emitting layer provided between the second semiconductor portion and the second semiconductor layer;
Including
The light emitting element portion
A first bonding metal member provided between the first semiconductor portion and any one of the mounting patterns;
A second bonding metal member provided between the second semiconductor layer and the another mounting pattern;
The light-emitting device according to claim 1, further comprising:   The light emitting device according to claim 1, wherein an area of the second metal layer when projected onto the first plane is greater than 80% of an area of the mounting region.   The light emitting device according to any one of claims 1 to 7, wherein an area of the second metal layer when projected onto the first plane is 95% or more of an area of the second main surface.   The light emitting device according to claim 1, wherein a plurality of the light emitting units are provided, and the heat conductive layer is disposed between the plurality of light emitting units and the heat dissipation member. It further comprises a light reflecting and insulating light reflecting resin layer,
A plurality of the light emitting units are provided,
The substrate of the light emitting unit in one of the plurality of light emitting units has a first side surface that intersects the first main surface,
The substrate of another light emitting unit aligned with the one light emitting unit among the plurality of light emitting units in a plane parallel to the first main surface intersects the first main surface and intersects the first main surface. Having a second side facing the side;
The light-emitting device according to claim 1, wherein the light reflecting resin layer covers at least a part of the first side surface and covers at least a part of the second side surface.   The thickness of the heat radiating member is not less than 0.06 times and not more than 0.12 times the length of the heat radiating member in the direction parallel to the first main surface of the region where the mounting substrate portion is provided. The light emitting device according to claim 10.   The light emitting device according to any one of claims 1 to 11, wherein a first surface of the heat dissipating member facing the second main surface has irregularities.   The concave-convex concave portion of the first surface has a curved surface shape connecting the heat radiation member bottom surface portion, the heat radiation member side surface portion intersecting the second main surface, and the heat radiation member bottom surface portion and the heat radiation member side surface portion. The light emitting device according to claim 12, further comprising: a heat dissipation member corner portion.   A distance in a direction perpendicular to the first main surface between the upper surface of any one of the plurality of semiconductor light emitting elements and the upper surface of the wavelength conversion layer is not less than 100 micrometers and not more than 300 micrometers. The light emitting device according to claim 1. A lighting device member;
The light-emitting device according to any one of claims 1 to 14 provided on the illumination device member;
With
The heat radiating member has a heat conductivity greater than that of the lighting device member and is 300 W / (m · K) or more.

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