JPWO2015182644A1 - Magnetoresistive element, magnetic sensor and current sensor - Google Patents

Abstract

The magnetoresistive element (1) is provided above the substrate (10) and the substrate (10), and an antiferromagnetic layer (14) and a ferromagnetic layer (15) are laminated in this order from the substrate (10) side. The laminated body (12) made and the electrode part (18) provided in the both ends of the laminated body (12) are provided. The ferromagnetic layer (15) is provided on the antiferromagnetic layer (14) so as to cover the entire main surface of the antiferromagnetic layer (14), and the ferromagnetic layer (15) and the antiferromagnetic body The magnetization direction of the ferromagnetic layer (15) fixed by the exchange coupling magnetic field generated between the layer (14) and the direction connecting the electrodes (18) at the shortest intersect each other.

Description

  The present invention relates to a magnetoresistive element, a magnetic sensor, and a current sensor.

  2. Description of the Related Art Conventionally, an AMR (Anisotropic Magneto Resistance) element is known as a magnetoresistive effect element using an anisotropic magnetoresistive effect. The AMR element has a ferromagnetic layer exhibiting an anisotropic magnetoresistance effect.

  In general, the anisotropic magnetoresistive effect is determined by the direction of current flowing through the magnetoresistive element, the magnetization direction of the ferromagnetic layer, and the like. FIG. 25 is a diagram illustrating an example of the direction of current flowing through the magnetoresistive element and the magnetization direction of the ferromagnetic layer. FIG. 26 is a diagram showing output characteristics of a general magnetoresistive element.

As shown in FIG. 25, if the angle at which the moving direction of the current I flowing through the magnetoresistive element intersects the direction of the magnetization M of the ferromagnetic layer is θ, the electrical resistance of the magnetoresistive element is shown in FIG. The resistance R is expressed as R = R0 + ΔRcos ² θ. Here, R0 is a constant value portion of the resistance, and ΔR is the maximum value of the changing portion. In the absence of an external magnetic field, the magnetization is manufactured so as to be oriented in the longitudinal direction (magnetization easy axis). Therefore, the characteristics of the AMR element have an even function characteristic with the magnetic field 0 being symmetric.

  AMR elements are often used in magnetic heads and magnetic sensors of magnetic recording media. In this case, the even function characteristic is converted into an odd function by applying a bias magnetic field to the ferromagnetic layer. Thereby, the change in magnetoresistance of the AMR element responds linearly to the external magnetic field.

  As a method of making an odd function other than applying a bias magnetic field to such a ferromagnetic layer, a conductive film (barber pole electrode) inclined obliquely with respect to the longitudinal direction (easy axis) on the ferromagnetic layer A barber pole bias method has been proposed in which the direction of the current flowing in the ferromagnetic layer is tilted by forming.

  As a document disclosing a magnetoresistive element provided with a barber pole electrode, for example, “THE BARBER POLE, A LINEAR MAGNETRESISTIVE HEAD”, K.A. E. Kuijk, W.H. J. et al. van Gestel and F.M. W. Gorter, IEEE Transactions on Magnetics, vol. Mag-11, no. 5, September 1975 (Non-patent Document 1).

“THE BARBER POLE, A LINEAR MAGNETORESISTIVE HEAD”, K.K. E. Kuijk, W.H. J. et al. van Gestel and F.M. W. Gorter, IEEE Transactions on Magnetics, vol. Mag-11, no. 5, September 1975

  However, when a barber pole electrode is provided on a ferromagnetic layer as in the magnetoresistive element disclosed in Non-Patent Document 1, the ferromagnetic body located immediately below the barber pole electrode does not detect a magnetic signal. The magnetic area is reduced. Further, the electric resistance of the barber pole electrode is added to the electric resistance of the ferromagnetic material. For this reason, we are anxious about the magnetoresistive change rate of a magnetoresistive element becoming small.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetoresistive element and a magnetic sensor capable of suppressing a decrease in a magnetosensitive region and improving a magnetoresistance change rate. And providing a current sensor.

  A magnetoresistive element according to the present invention includes a substrate, a laminate provided above the substrate, in which an antiferromagnetic layer and a ferromagnetic layer are laminated, and electrode portions provided at both ends of the laminate. And comprising. One of the ferromagnetic layer and the antiferromagnetic layer covers the entire other main surface of the ferromagnetic layer and the antiferromagnetic layer, and the ferromagnetic layer and the antiferromagnetic layer. The magnetization direction of the ferromagnetic layer fixed by an exchange coupling magnetic field generated between the ferromagnetic layer and the antiferromagnetic layer, and the direction connecting the electrode portions in the shortest direction. And intersect.

  In the magnetoresistive element according to the present invention, the antiferromagnetic layer and the ferromagnetic layer may be sequentially stacked from the substrate side in the stacked body.

  In the magnetoresistive element according to the present invention, in the laminated body, the ferromagnetic layer and the antiferromagnetic layer may be laminated in order from the substrate side.

  In the magnetoresistive element according to the present invention, the angle at which the magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field intersects the direction connecting the electrode portions at the shortest is 45 degrees. Preferably there is.

  In the magnetoresistive element according to the present invention, the antiferromagnetic material layer includes an alloy containing any one element of Ni, Fe, Pd, Pt, and Ir and Mn, Pd, Pt, and Mn. It is preferable to be made of an alloy containing Ni or an alloy containing Cr, Pt and Mn.

  In the magnetoresistive element according to the present invention, the ferromagnetic layer is preferably made of an alloy containing Ni and Fe or an alloy containing Ni and Co.

  The magnetoresistive element according to the present invention is provided between the antiferromagnetic layer and the ferromagnetic layer, and an exchange coupling magnetic field generated between the antiferromagnetic layer and the ferromagnetic layer. It is preferable to further include an exchange coupling magnetic field adjustment layer that adjusts the size of.

  In the magnetoresistive element according to the present invention, the exchange coupling magnetic field adjustment layer is preferably made of Co or an alloy containing Co.

  In the magnetoresistive element according to the present invention, a plurality of the laminated bodies may be provided. In this case, each of the plurality of stacked bodies preferably has a rectangular shape having two sets of opposite sides facing each other when viewed from the stacking direction, and the plurality of stacked bodies include the ferromagnetic layer. It is preferable that they are provided apart from each other so that their magnetization directions are aligned. Furthermore, when viewed from the stacking direction, it is preferable that the electrode portions and the stacked body are alternately arranged along a direction in which one of the two sets of opposite sides extends.

  In the magnetoresistive element based on the said invention, the said laminated body may have a substantially square shape, when it sees from the lamination direction.

  In the magnetoresistive element according to the present invention, the plurality of stacked bodies may be provided in a straight line along a direction in which one of the two sets of opposite sides extends. .

  In the magnetoresistive element based on the said invention, the several said laminated body may be shifted | deviated and provided in the direction where the other opposite side extends among the said 2 sets of opposite sides.

  In the magnetoresistive element according to the present invention, the laminated body may include a portion formed in a meander shape so that the magnetization directions are aligned.

  In the magnetoresistive element according to the present invention, the laminate may further include electrode base portions connected to both end sides of the meander-shaped portion. In this case, the electrode part is preferably provided on the electrode base part.

  In the magnetoresistive element according to the present invention, the portion formed in the meander shape alternately connects a plurality of linear portions arranged in parallel and the ends of the linear portions adjacent to each other. You may be comprised by the several folding | turning part. In this case, it is preferable that a conductive layer having a lower electrical resistance than the ferromagnetic layer is provided on each of the plurality of folded portions.

  In the magnetoresistive element according to the present invention, a plurality of the laminated bodies may be provided. In this case, in the magnetoresistive element, a plurality of the stacked bodies are provided in parallel so that the magnetization directions are aligned, and the ends of the stacked bodies in which the electrode portions are adjacent to each other are alternately connected. By doing so, it is preferably formed in a meander shape.

The magnetic sensor based on this invention is equipped with the said magnetoresistive element.
A current sensor according to the present invention includes a bus bar through which a current to be measured flows, and the magnetic sensor.

  According to the present invention, it is possible to provide a magnetoresistive element, a magnetic sensor, and a current sensor that can suppress a decrease in a magnetosensitive region and improve a magnetoresistance change rate.

1 is a schematic cross-sectional view of a magnetoresistive element according to a first embodiment. FIG. 2 is a cross-sectional view schematically showing a state where the antiferromagnetic layer and the ferromagnetic layer shown in FIG. 1 are exchange coupled. It is a top view which shows the magnetization direction of the ferromagnetic material layer fixed by the exchange coupling magnetic field from an antiferromagnetic material layer, and the direction which connects between electrode parts at the shortest. It is a figure which shows the relationship between the magnetic resistance of the magnetoresistive element shown in FIG. 1, and a magnetic field. It is a top view of the magnetic sensor comprised using the magnetoresistive element shown in FIG. It is a top view which shows the magnetic sensor in a 1st modification. 6 is a schematic cross-sectional view of a magnetoresistive element according to Embodiment 2. FIG. It is a top view of the magnetic sensor which comprises the magnetoresistive element which concerns on a comparative example. It is a figure which shows the relationship between the bridge voltage change rate of the magnetic sensor which concerns on Example 1, and a magnetic field. It is a figure which shows the relationship between the bridge voltage change rate of the magnetic sensor which concerns on a comparative example, and a magnetic field. FIG. 6 is a schematic diagram showing a current sensor according to a third embodiment. It is a figure which shows typically the magnetic field which generate | occur | produces in sectional drawing seen from the XII-XII line arrow direction shown in FIG. 6 is a schematic cross-sectional view of a magnetoresistive element according to Embodiment 4. FIG. FIG. 10 is a plan view of a magnetoresistive element according to a fifth embodiment. It is sectional drawing along the XV-XV line | wire shown in FIG. It is a figure for demonstrating shape anisotropy. It is a figure which shows the relationship between magnetoresistance and a magnetic field when the direction of magnetization changes with shape anisotropy. It is a top view of the magnetic sensor comprised using multiple magnetoresistive elements shown in FIG. It is a top view of the magnetic sensor in the 2nd modification. FIG. 10 is a plan view of a magnetoresistive element according to a sixth embodiment. It is a top view of the magnetic sensor comprised using a plurality of magnetoresistive elements shown in FIG. It is a top view of the magnetic sensor in a 3rd modification. It is a top view of the magnetic sensor in the 4th modification. It is a top view of the magnetic sensor in a 5th modification. It is a figure which shows an example of the direction of the electric current which flows through a magnetoresistive element, and the magnetization direction of a ferromagnetic material layer. It is a figure which shows the output characteristic of a general magnetoresistive element.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following embodiments, the same or common parts are denoted by the same reference numerals in the drawings, and description thereof will not be repeated.

(Embodiment 1)
FIG. 1 is a schematic cross-sectional view of the magnetoresistive element according to the present embodiment. A magnetoresistive element 1 according to the present exemplary embodiment will be described with reference to FIG.

  As shown in FIG. 1, the magnetoresistive element 1 includes a substrate 10, an insulating layer 11, a stacked body 12, a pair of electrode portions 18, and a protective layer 19.

  As the substrate 10, for example, a silicon substrate is used. Further, as the substrate 10, an insulating substrate such as a glass substrate or a plastic substrate may be used. In this case, the insulating layer 11 can be omitted.

The insulating layer 11 is provided so as to cover the entire main surface of the substrate 10. For example, a silicon oxide film (SiO ₂ film) or an aluminum oxide film (Al ₂ O ₃ ) is used for the insulating layer 11. The insulating layer 11 can be formed by, for example, a CVD method or the like.

  The laminated body 12 has, for example, a rectangular shape and has a longitudinal direction in the DR1 direction in the drawing. The stacked body 12 is provided on the insulating layer 11. The stacked body 12 includes an underlayer 13, an antiferromagnetic material layer 14, and a ferromagnetic material layer 15. As the underlayer 13, a (111) plane parallel to the interface of one metal film made of a metal such as Ta, W, Mo, Cr, Ti, or Zr, or a face-centered cubic crystal and an antiferromagnetic material layer 14. A metal film made of a metal or alloy in which is preferentially oriented (for example, Ni, Au, Ag, Cu, Pt, Ni—Fe, Co—Fe, etc.), and a laminated film in which these metal films are laminated Used. The underlayer 13 is provided on the insulating layer 11. The underlayer 13 is provided for appropriately growing the crystal of the antiferromagnetic material layer 14. The underlayer 13 can be omitted if the crystal of the antiferromagnetic material layer 14 can be grown appropriately.

  The antiferromagnetic material layer 14 is provided above the substrate 10. Specifically, the antiferromagnetic material layer 14 is provided on the underlayer 13. When the underlayer 13 is omitted as described above, the antiferromagnetic material layer 14 is provided on the insulating layer 11.

  The antiferromagnetic material layer 14 includes an alloy containing any one element of Ni, Fe, Pd, Pt, and Ir and Mn, an alloy containing Pd, Pt, and Mn, or Cr, Pt, and Mn. It consists of an alloy containing Mn such as an alloy containing. Since these alloys have a high blocking temperature, the exchange coupling magnetic field does not disappear up to a high temperature. For this reason, the magnetoresistive element 1 can be operated stably.

  An alloy containing Fe and Mn, an alloy containing Pt and Mn, an alloy containing Ir and Mn, and an alloy containing Cr, Pt and Mn are irregular alloys depending on the composition. No heat treatment (heat treatment for ordering the crystal structure) is required. For this reason, when these alloys are employed as the antiferromagnetic material layer 14, the manufacturing process can be simplified.

The ferromagnetic layer 15 is provided on the antiferromagnetic layer 14 so as to cover the entire main surface of the antiferromagnetic layer 14. The ferromagnetic layer 15 is made of a material that produces an anisotropic magnetoresistance effect, such as an alloy containing Ni and Fe or an alloy containing Ni and Co. Since an alloy containing Ni and Fe has a small coercive force, hysteresis can be reduced. In particular, Ni ₈₀ Fe ₂₀ or an alloy containing Ni and Fe having a composition close to Ni ₈₀ Fe ₂₀ has a cubic crystal magnetic anisotropy of approximately 0 erg / cm ³ . A material having a magnetocrystalline anisotropy of 0 erg / cm ³ is isotropic because there is no easy magnetization axis or difficult magnetization axis due to magnetocrystalline anisotropy. In addition, in an alloy containing Ni and Fe having the above composition and a composition close thereto, the magnetostriction is almost zero, so that the magnetic anisotropy induced magnetoelastically by the strain of the crystal is small. In addition, since an alloy including Ni and Fe can easily induce a macroscopic easy axis of magnetization throughout the thin film by heat treatment in a magnetic field, the direction of the easy axis of magnetization throughout the thin film is designed. It becomes easy.

  The pair of electrode portions 18 are provided at both ends of the multilayer body 12 so as to face each other on the upper surface of the multilayer body 12. The electrode portion 18 is made of a metal material having good electrical conductivity such as Al. In order to improve the adhesion between the electrode portion 18 and the ferromagnetic layer 15, an adhesion layer made of Ti or the like may be provided between the electrode portion 18 and the ferromagnetic layer 15.

The protective layer 19 is provided so as to cover the stacked body 12 and the pair of electrode portions 18. The protective layer 19 is provided with a contact hole 19a so that a part of the pair of electrode portions 18 is exposed. The protective layer 19 is made of, for example, a silicon oxide film (SiO ₂ ), and is provided to prevent the ferromagnetic layer 15 and the like from being oxidized or corroded. Note that the protective layer 19 may not be provided.

  FIG. 2 is a cross-sectional view schematically showing a state where the antiferromagnetic layer and the ferromagnetic layer shown in FIG. 1 are exchange coupled. With reference to FIG. 2, the state in which the antiferromagnetic material layer 14 and the ferromagnetic material layer 15 are exchange-coupled will be described.

  As shown in FIG. 2, since the antiferromagnetic layer 14 is provided over the entire lower surface of the ferromagnetic layer 15, the exchange coupling magnetic field acts on the entire ferromagnetic layer. Thereby, the magnetization direction of the ferromagnetic layer 15 can be aligned in one direction. That is, the ferromagnetic layer 15 can be made into a single magnetic domain. The magnitude of the exchange coupling magnetic field can be adjusted by, for example, the film thickness of the ferromagnetic layer 15.

  FIG. 3 is a plan view showing the magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field from the antiferromagnetic layer and the direction connecting the electrodes in the shortest distance.

  As shown in FIG. 3, the magnetization direction M of the ferromagnetic layer 15 fixed by the exchange coupling magnetic field generated between the ferromagnetic layer 15 and the antiferromagnetic layer 14 and the electrode portion 18 are connected in the shortest distance. Crosses the direction (DR1 direction). Specifically, the angle at which the magnetization direction M of the ferromagnetic layer fixed by the exchange coupling magnetic field intersects with the direction connecting the electrode portions 18 at the shortest is 45 °. Thereby, most of the detection current I flows in the direction connecting the pair of electrode portions 18 in the shortest distance, and the direction in which the detection current I flows and the magnetization direction M of the ferromagnetic layer 15 intersect at 45 °.

  Thus, when setting the magnetization direction of the ferromagnetic layer 15 and the direction connecting the electrode portions 18 in the shortest distance, first, from the underlayer 13 to the ferromagnetic layer 15 using a vacuum deposition method, a sputtering method, or the like. Form. Subsequently, by performing heat treatment while applying a magnetic field, an exchange coupling magnetic field is obtained between the ferromagnetic layer 15 and the antiferromagnetic layer 14, and the magnetization direction of the ferromagnetic layer 15 is fixed in the direction of the magnetic field. Is done.

  Further, when the underlayer 13 to the ferromagnetic layer 15 are formed using a vacuum deposition method, a sputtering method or the like while applying a magnetic field, if the antiferromagnetic layer 14 is an irregular alloy, the ferromagnetic layer 15 Since the magnetization direction is fixed in the direction of the magnetic field by the exchange coupling magnetic field between the ferromagnetic layer 15 and the antiferromagnetic layer 14, heat treatment for causing exchange coupling is not necessary. In order to obtain a sufficiently large exchange coupling magnetic field, after the stacked body 12 is formed, heat treatment may be performed while applying a magnetic field in the same direction as the magnetic field applied during the formation.

  When the antiferromagnetic layer 14 is an ordered alloy, after the stacked body 12 is formed, a heat treatment is performed while applying a magnetic field, thereby exchanging between the ferromagnetic layer 15 and the antiferromagnetic layer 14. A coupled magnetic field is obtained, and the magnetization direction of the ferromagnetic layer 15 is fixed to the direction of the magnetic field. The direction of the applied magnetic field is better to be the same direction as the magnetic field applied during formation.

  The laminate 12 is patterned into a rectangular shape so that the magnetization direction of the ferromagnetic layer 15 and the longitudinal direction of the laminate 12 intersect at 45 °.

  FIG. 4 is a diagram showing the relationship between the magnetic resistance and the magnetic field of the magnetoresistive element shown in FIG. With reference to FIG. 4, the relationship between the magnetic resistance of the magnetoresistive element 1 and a magnetic field is demonstrated.

  As described above, when the direction in which the detection current I flows and the magnetization direction M of the ferromagnetic layer 15 intersect at 45 °, a good linearly responding region can be obtained.

  In this embodiment, the barber pole electrode is not provided on the ferromagnetic layer 15, and the magnetization direction of the ferromagnetic layer 15 is the direction in which the detection current flows (the direction connecting the electrodes as short as possible). Can be fixed at an angle of 45 °. Thereby, it can suppress that the magnetosensitive area | region of the ferromagnetic material layer 15 reduces.

  Further, since the barber pole electrode is not provided, it is possible to prevent the electric resistance of the barber pole electrode from being added to the electric resistance of the ferromagnetic layer. As a result, the magnetoresistive element 1 according to the present exemplary embodiment can suppress the decrease of the magnetosensitive region and improve the magnetoresistance change rate.

  Further, the ferromagnetic layer 15 is provided on the antiferromagnetic layer 14 so as to cover the entire main surface of the antiferromagnetic layer 14, and the magnetization direction of the ferromagnetic layer 15 is the antiferromagnetic layer 14. Since it is fixed in one direction by the exchange coupling magnetic field from, it can be made into a single magnetic domain. Thereby, Barkhausen noise can be suppressed.

  In addition, the magnetization direction of the ferromagnetic layer 15 is fixed in one direction by the exchange coupling magnetic field from the antiferromagnetic layer 14. For this reason, even if a large external magnetic field is applied and the magnetization direction of the ferromagnetic layer 15 rotates, the magnetization direction of the ferromagnetic layer 15 returns to the direction before the rotation if the external magnetic field disappears. Thereby, the failure by a disturbance magnetic field can be suppressed.

(Magnetic sensor)
FIG. 5 is a plan view of a magnetic sensor constituted by using a plurality of magnetoresistive elements shown in FIG. With reference to FIG. 5, a magnetic sensor 100 configured by using a plurality of magnetoresistive elements shown in FIG. 1 will be described.

  As shown in FIG. 5, the magnetic sensor 100 is provided by configuring a full bridge circuit using four magnetoresistive elements 1A, 1B, 1C, and 1D. One end of the magnetoresistive element 1A is electrically connected to an electrode pad P1 for taking out the output voltage Vout2 through the wiring pattern 3A. The other end side of the magnetoresistive element 1A is electrically connected to an electrode pad P3 for applying the power supply voltage Vcc via the wiring pattern 3B. One end of the magnetoresistive element 1D is electrically connected to the electrode pad P1 through the wiring pattern 3A. The other end side of the magnetoresistive element 1D is electrically connected to the electrode pad P4 connected to the ground via the wiring pattern 3D.

  One end of the magnetoresistive element 1B is electrically connected to an electrode pad P2 for taking out the output voltage Vout1 through the wiring pattern 3C. The other end of the magnetoresistive element 1B is electrically connected to the electrode pad P3 via the wiring pattern 3B. One end of the magnetoresistive element 1C is electrically connected to the electrode pad P2 via the wiring pattern 3C. The other end side of the magnetoresistive element 1C is connected to the electrode pad P4 via the wiring pattern 3D.

  The magnetoresistive elements 1A and 1D are connected in series via the wiring patterns 3B, 3A and 3D and the electrode pads P3, P1 and P4, thereby forming a first series circuit (half bridge circuit). The magnetoresistive elements 1B and 1C are connected in series via the wiring patterns 3B, 3C and 3D and the electrode pads P3, P2 and P4, thereby forming a second series circuit (half bridge circuit). The first series circuit (half-bridge circuit) and the second series circuit (half-bridge circuit) are connected in parallel via the electrode pads P3 and P4, thereby forming a full bridge circuit. The magnetoresistive elements 1A and 1C have a positive output property, and the magnetoresistive elements 1B and 1D have a negative output property.

  When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, output voltages Vout2 and Vout1 are extracted from the electrode pad P1 and the electrode pad P2 according to the magnetic field strength. The output voltages Vout2 and Vout1 are differentially amplified through a differential amplifier (not shown).

  By configuring the bridge circuit in this way, it is possible to suppress a decrease in the magnetosensitive region, improve the magnetoresistance change rate, and improve resistance to changes in the external environment such as temperature.

  Further, in the magnetic sensor according to the present embodiment, since the barber pole electrode is not provided on the magnetoresistive element, the processing variation of the barber pole electrode does not occur. For this reason, variation in electric resistance of the magnetoresistive element is small, and when a full bridge circuit is configured, it is easy to adjust the offset voltage.

(First Modification of Magnetic Sensor)
FIG. 6 is a plan view showing the magnetic sensor in the first modification. With reference to FIG. 6, the magnetic sensor 100 </ b> A according to the first modification will be described.

  When compared with the magnetic sensor 100 according to the first embodiment, the magnetic sensor 100A according to the first modification includes the magnetoresistive elements 1A, 1B, 1C, and 1D in which a plurality of stacked bodies 12 are arranged in a meander shape. Are different from each other in that they are electrically connected.

  Specifically, as shown in FIG. 6, a plurality of stacked bodies 12 are provided in each of the magnetoresistive elements 1A, 1B, 1C, 1D, and a plurality of stacked bodies are provided in each of the magnetoresistive elements 1A, 1B, 1C, 1D. 12 are arranged in parallel so that the magnetization directions are aligned, and the electrode portions are alternately connected to the ends of the stacked bodies 12 adjacent to each other. Thereby, each magnetoresistive element 1A, 1B, 1C, 1D is formed in the meander shape.

  More specifically, each of the magnetoresistive elements 1A, 1B, 1C, and 1D is formed by connecting the stacked body 12 having a long strip pattern and the connection electrodes 40 having a short strip pattern alternately and orthogonally, It is formed in a meander shape.

  Each of the plurality of stacked bodies 12 included in the magnetoresistive elements 1A and 1C extends along the same direction, and is arranged at a predetermined interval in a direction orthogonal to the extending direction. Each of the plurality of stacked bodies 12 included in the magnetoresistive elements 1B and 1D extends along the same direction, and is arranged at a predetermined interval in a direction orthogonal to the extending direction. The extending direction of the multiple stacked bodies 12 included in the magnetoresistive elements 1A and 1C is orthogonal to the extending direction of the multiple stacked bodies 12 included in the magnetoresistive elements 1B and 1D.

  Even in the case of such a configuration, the magnetic sensor 100A in the first modified example can obtain the same effect as the magnetic sensor 100.

(Embodiment 2)
FIG. 7 is a schematic cross-sectional view of the magnetoresistive element according to the present embodiment. With reference to FIG. 7, the magnetoresistive element 1E according to the present exemplary embodiment will be described.

  As shown in FIG. 7, the magnetoresistive element 1 </ b> E is different from the magnetoresistive element 1 according to Embodiment 1 in that it further includes an exchange coupling magnetic field adjustment layer 16. Other configurations are almost the same.

  The exchange coupling magnetic field adjustment layer 16 is provided between the antiferromagnetic material layer 14 and the ferromagnetic material layer 15, and has a large exchange coupling magnetic field generated between the antiferromagnetic material layer 14 and the ferromagnetic material layer 15. Adjust the height. The exchange coupling magnetic field adjustment layer 16 is a ferromagnetic layer made of, for example, Co or an alloy containing Co. The exchange coupling magnetic field adjustment layer 16 is preferably provided on the antiferromagnetic material layer 14 so as to cover the entire main surface of the antiferromagnetic material layer 14.

  By providing the exchange coupling magnetic field adjustment layer 16 and adjusting the magnitude of the exchange coupling magnetic field, the range of the linearly responding region can be adjusted. Thereby, the freedom degree of design of an input dynamic range can be enlarged.

  For example, the magnitude of the exchange coupling magnetic field generated between the exchange coupling magnetic field adjusting layer 16 and the antiferromagnetic layer 14 is such that the ferromagnetic layer 15 is laminated directly on the antiferromagnetic layer 14. It is preferable that the magnitude of the exchange coupling magnetic field generated between the magnetic layer 14 and the ferromagnetic layer 15 is larger. In this case, by providing the exchange coupling magnetic field adjustment layer 16, the magnitude of the exchange coupling magnetic field that acts on the ferromagnetic layer 15 from the antiferromagnetic layer 14 can be increased. Thereby, the range of the region which responds linearly can be expanded.

  Further, by providing the exchange coupling magnetic field adjustment layer 16 made of a ferromagnetic layer made of Co or an alloy containing Co, Mn contained in the antiferromagnetic layer 14 is prevented from diffusing into the ferromagnetic layer 15. be able to. Thereby, the performance deterioration accompanying diffusion can be suppressed, the characteristics can be stabilized, and the reliability can be improved.

  As a result, the magnetoresistive element 1E according to the present embodiment can obtain an effect equal to or greater than that of the magnetoresistive element according to the first embodiment.

(Verification experiment)
Here, a magnetic sensor including a magnetoresistive element according to a comparative example is prepared. FIG. 8 is a plan view of a magnetic sensor including a magnetoresistive element according to a comparative example. The magnetic sensor X is configured by magnetoresistive elements 1AX, 1BX, 1CX, and 1DX including barber pole electrodes 17 like the magnetoresistive element disclosed in Non-Patent Document 1.

  Specifically, as shown in FIG. 8, the magnetic sensor X is provided by configuring a full bridge circuit using four magnetoresistive elements 1AX, 1BX, 1CX, and 1DX, similarly to the magnetic sensor 100. . One end side of the magnetoresistive element 1AX is electrically connected to an electrode pad P1X for taking out the output voltage Vout2X through the wiring pattern 3AX. The other end side of the magnetoresistive element 1AX is electrically connected to the electrode pad P3X for applying the power supply voltage Vcc via the wiring pattern 3BX. One end side of the magnetoresistive element 1DX is electrically connected to the electrode pad P1X through the wiring pattern 3AX. The other end side of the magnetoresistive element 1DX is electrically connected to the electrode pad P4X connected to the ground via the wiring pattern 3DX.

  One end side of the magnetoresistive element 1BX is electrically connected to the electrode pad P2X for taking out the output voltage Vout1X through the wiring pattern 3CX. The other end side of the magnetoresistive element 1BX is electrically connected to the electrode pad P3X through the wiring pattern 3BX. One end side of the magnetoresistive element 1CX is electrically connected to the electrode pad P2X through the wiring pattern 3CX. The other end side of the magnetoresistive element 1CX is connected to the electrode pad P4X through the wiring pattern 3DX.

  The magnetoresistive elements 1AX and 1CX have a positive output property, and the magnetoresistive elements 1BX and 1DX have a negative output property.

  When the power supply voltage Vcc is applied between the electrode pad P3X and the electrode pad P4X, output voltages Vout2X and Vout1X are extracted from the electrode pad P1X and the electrode pad P2X according to the magnetic field strength. The output voltages Vout2X and Vout1X are differentially amplified via a differential amplifier (not shown).

  The conditions and results of the verification experiment will be described with the magnetic sensor according to Example 1 and the magnetic sensor X according to the comparative example. The magnetic sensor according to the first embodiment uses the magnetic sensor 100 according to the first embodiment.

In the magnetoresistive element that constitutes the magnetic sensor according to the first embodiment, as the stacked body 12, a stacked body (Si / layer) in which an underlayer, an antiferromagnetic layer, and a ferromagnetic layer are stacked in this order from the substrate 10 side. is used _{SiO 2 / Ta / Ni-Fe} / Ni-Mn / Ni-Fe). The Si / SiO ₂ described above is a substrate and an insulating layer and is not included in the laminate. In Example 1, a laminated film in which an alloy containing Ni and Fe is laminated on a Ta film is used as the underlayer 13. An alloy containing Ni and Mn is used as the antiferromagnetic material layer 14. An alloy containing Ni and Fe is used as the ferromagnetic layer 15. In the underlayer 13, the thickness of the Ta film is 2 nm, and the thickness of the alloy layer containing Ni and Fe is 5 nm. In the antiferromagnetic material layer 14, the thickness of the alloy layer containing Ni and Mn is 40 nm. The thickness of the alloy layer containing Ni and Fe as the ferromagnetic layer 15 is 30 nm. In Example 1, no protective layer is provided on the laminate 12.

The magnetoresistive element constituting the magnetic sensor according to the comparative example is the same as the magnetoresistive element constituting the magnetic sensor according to the first embodiment (Si / SiO ₂ / Ta / Ni—Fe / Ni—Mn / Ni-Fe). The thickness of each layer is also the same.

  FIG. 9 is a diagram illustrating a relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor according to the first embodiment. FIG. 10 is a diagram illustrating a relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor according to the comparative example.

  As shown in FIG. 10, since the magnetic sensor according to the comparative example includes a barber pole electrode, the bridge voltage change rate exhibits linearity. On the other hand, as shown in FIG. 9, also in the magnetic sensor according to the first embodiment, the bridge voltage change rate shows linearity.

  As a result of the above verification experiment, the magnetization direction of the ferromagnetic layer 15 and the electrode portion 18 are shortest so that the magnetization direction M of the ferromagnetic layer 15 intersects the direction connecting the electrode portions 18 at the shortest. By setting the connection direction, it is experimentally possible to convert the characteristics of the AMR element to an odd function so that the change in magnetoresistance of the AMR element linearly responds to an external magnetic field without providing a barber pole electrode. It can be said that it was proved.

(Embodiment 3)
(Current sensor)
FIG. 11 is a schematic diagram showing a current sensor according to the present embodiment. A current sensor according to the present embodiment will be described with reference to FIG. Since the above-described magnetic sensor has a region that responds linearly over a relatively wide range, even when measuring a strong magnetic field, magnetic saturation does not occur, so that it can be used for a current sensor or the like.

  As shown in FIG. 11, a current sensor 150 according to the present embodiment includes magnetic sensors 100A and 100B, a bus bar 110 through which a current to be measured flows, and a subtractor 130. The magnetic sensors 100A and 100B have the same configuration as that of the magnetic sensor 100 according to Embodiment 1, and have an odd function input / output characteristic.

  The magnetic sensors 100A and 100B detect the strength of the magnetic field generated by the current flowing through the bus bar 110, and output a signal corresponding to the strength of the magnetic field from the bridge circuit. The subtractor 130 is a calculation unit that calculates the current value by subtracting the detection values of the magnetic sensor 100A and the magnetic sensor 100B.

  Bus bar 110 includes a first bus bar portion 111, a second bus bar portion, and a third bus bar portion 113 that are electrically connected in series. The first bus bar portion 111 and the third bus bar portion 113 are spaced apart from each other and extend in parallel. The first bus bar portion 111 and the third bus bar portion 113 are connected by the second bus bar portion.

  The second bus bar portion includes a parallel portion 112 extending in parallel with an interval from each of the first bus bar portion 111 and the third bus bar portion 113. The second bus bar portion includes a first connecting portion 114 that connects the other end of the first bus bar portion 111 and one end of the parallel portion 112 of the second bus bar portion, and the other end of the parallel portion 112 of the second bus bar portion. 2nd connection part 115 which connects the one end of the 3rd bus-bar part 113 is included.

  The first bus bar part 111, the parallel part 112 of the second bus bar part, and the third bus bar part 113 are arranged at equal intervals. Each of the first bus bar portion 111, the parallel portion 112 of the second bus bar portion, and the third bus bar portion 113 has a rectangular parallelepiped shape. However, the shape of each of the first bus bar portion 111, the parallel portion 112 of the second bus bar portion, and the third bus bar portion 113 is not limited to a rectangular parallelepiped shape, and may be, for example, a cylindrical shape.

  The first connecting portion 114 of the second bus bar portion extends linearly in a side view and is orthogonal to each of the first bus bar portion 111 and the parallel portion 112 of the second bus bar portion. The second connecting portion 115 of the second bus bar portion extends linearly in a side view and is orthogonal to each of the parallel portion 112 and the third bus bar portion 113 of the second bus bar portion.

  Each of the 1st connection part 114 and the 2nd connection part 115 of a 2nd bus-bar part has a rectangular parallelepiped shape. However, each shape of the 1st connection part 114 of the 2nd bus-bar part and the 2nd connection part 115 is not restricted to a rectangular parallelepiped shape, For example, a column shape may be sufficient.

  Bus bar 110 has an S-shape when viewed from the side. By configuring the bus bar 110 with one bus bar member having a bent shape so as to be folded back, the bus bar 110 having a high mechanical strength and a symmetrical shape can be obtained. However, the shape of the bus bar 110 is not limited to this. For example, the bus bar 110 is appropriately selected as long as the bus bar 110 has a shape including the first bus bar portion 111, the second bus bar portion, and the third bus bar portion 113 such as an E shape. be able to.

  Bus bar 110 is made of aluminum, for example. However, the material of the bus bar 110 is not limited to this, and may be a single metal such as silver or copper, or an alloy of these metals and other metals. The bus bar 110 may be subjected to a surface treatment. For example, a plating layer made of a single metal such as nickel, tin, silver, copper, or an alloy thereof may be formed on the surface of the bus bar 110 as a single layer or multiple layers.

  The bus bar 110 is formed by pressing a thin plate. However, the method of forming the bus bar 110 is not limited to this, and the bus bar 110 may be formed by a method such as cutting, casting, or forging.

  A direction 211 in which current flows through the first bus bar portion 111 and a direction 215 in which current flows through the third bus bar portion 113 are the same. The direction 211 in which current flows in the first bus bar part 111, the direction 215 in which current flows in the third bus bar part 113, and the direction 213 in which current flows in the parallel part 112 of the second bus bar part 113 are opposite. The direction 212 in which the current flows through the first connecting portion 114 of the second bus bar portion is the same as the direction 214 in which the current flows through the second connecting portion 115 of the second bus bar portion.

  The magnetic sensor 100A is located between the first bus bar portion 111 and the parallel portion 112 of the second bus bar portion facing each other. The magnetic sensor 100B is located between the parallel portion 112 and the third bus bar portion 113 of the second bus bar portion facing each other.

  The magnetic sensor 100A is in a direction orthogonal to the direction in which the first bus bar part 111 and the third bus bar part 113 are arranged, and in a direction orthogonal to the extending direction of the first bus bar part 111 in FIG. The detection axis is in the direction indicated by the arrow 101A.

  The magnetic sensor 100B is in a direction orthogonal to the direction in which the first bus bar portion 111 and the third bus bar portion 113 are aligned and in a direction orthogonal to the extending direction of the third bus bar portion 113 in FIG. And has a detection axis in the direction indicated by arrow 101B.

  The magnetic sensors 100A and 100B output a positive value when a magnetic field directed in one direction of the detection axis is detected, and are negative when a magnetic field directed in a direction opposite to the one direction of the detection axis is detected. It has an odd function input / output characteristic that outputs a value. That is, with respect to the strength of the magnetic field generated by the current flowing through the bus bar 110, the phase of the detection value of the magnetic sensor 100A and the phase of the detection value of the magnetic sensor 100B are opposite in phase.

  The magnetic sensor 100 </ b> A is electrically connected to the subtractor 130 through the first connection wiring 141. The magnetic sensor 100 </ b> B is electrically connected to the subtractor 130 through the second connection wiring 142.

  The subtractor 130 calculates the value of the current flowing through the bus bar 110 by subtracting the detection value of the magnetic sensor 100A and the detection value of the magnetic sensor 100B. In the present embodiment, the subtractor 130 is used as the calculation unit. However, the calculation unit is not limited to this, and a differential amplifier or the like may be used.

  FIG. 12 is a diagram schematically showing a generated magnetic field in the cross-sectional view seen from the arrow direction of the XII-XII line shown in FIG. In FIG. 12, the detection axis direction of the magnetic sensor 100A and the magnetic sensor 100B is indicated as the X direction, and the direction in which the first bus bar portion 111, the parallel portion 112 of the second bus bar portion and the third bus bar portion 113 are arranged is indicated as the Y direction. Yes. The extending direction of the parallel portion 112 of the second bus bar portion is the Z direction.

  As shown in FIG. 12, when a current flows through the first bus bar portion 111, a magnetic field 111e that circulates clockwise in the drawing according to the so-called right-handed screw law is generated. Similarly, when a current flows through the parallel portion 112 of the second bus bar portion, a magnetic field 112e that circulates counterclockwise in the figure is generated. When a current flows through the third bus bar portion 113, a magnetic field 113e that circulates clockwise in the figure is generated.

  As a result, a leftward magnetic field in the figure is applied to the magnetic sensor 100A in the direction of the detection axis indicated by the arrow 101A. On the other hand, a magnetic field facing right in the figure is applied to the magnetic sensor 100B in the direction of the detection axis indicated by the arrow 101B.

  Therefore, if the strength of the magnetic field detected by the magnetic sensor 100A is a positive value, the strength of the magnetic field detected by the magnetic sensor 100B is a negative value. The detection value of the magnetic sensor 100A and the detection value of the magnetic sensor 100B are transmitted to the subtractor 130.

  The subtracter 130 subtracts the detection value of the magnetic sensor 100B from the detection value of the magnetic sensor 100A. As a result, the absolute value of the detection value of the magnetic sensor 100A and the absolute value of the detection value of the magnetic sensor 100B are added. From the addition result, the value of the current flowing through the bus bar 110 is calculated.

  Note that an adder or an addition amplifier may be used as the calculation unit in place of the subtractor 130 while the input / output characteristics of the magnetic sensor 100A and the magnetic sensor 100B have opposite polarities.

  In the current sensor 150 in the present embodiment, the first bus bar portion 111 and the third bus bar portion 113 are positioned symmetrically with respect to each other about the center point of the parallel portion 112 of the second bus bar portion in the cross section. In addition, the first bus bar portion 111 and the third bus bar portion 113 are positioned symmetrically with respect to each other about the center line of the parallel portion 112 of the second bus bar portion in the direction of the detection axis of the magnetic sensor 100A and the magnetic sensor 100B in the cross section. doing.

  Also, the magnetic sensor 100A and the magnetic sensor 100B are located symmetrically with respect to each other about the center point of the parallel portion 112 of the second bus bar portion in the cross section. In addition, the magnetic sensor 100A and the magnetic sensor 100B are positioned symmetrically with respect to each other about the center line of the parallel portion 112 of the second bus bar portion in the direction of the detection axis of the magnetic sensor 100A and the magnetic sensor 100B in the cross section.

  The magnetic sensor 100A and the magnetic sensor 100B arranged symmetrically in this way show detection values that equally reflect the magnetic field generated by the current flowing through the bus bar 110. Therefore, the linearity between the strength of the magnetic field generated by the current flowing through the bus bar 110 and the value of the current flowing through the bus bar 110 calculated therefrom can be improved.

  In the present embodiment, the case where the magnetic sensor included in the current sensor 150 is configured by the magnetoresistive element according to the first embodiment has been described as an example, but the present invention is not limited to this. You may be comprised by the magnetoresistive element which concerns on form 2. Further, the magnetic sensor according to the present embodiment may be configured similarly to the magnetic sensor in the first modification. Furthermore, the magnetic sensor according to the present embodiment includes a magnetic sensor according to a third embodiment described later, a magnetic sensor according to the second modification, a magnetic sensor according to the third modification, a magnetic sensor according to the fourth modification, and a fifth sensor. It may be configured similarly to any of the magnetic sensors in the modification.

  By configuring as described above, the current sensor 150 according to the present embodiment can suppress a decrease in the magnetic sensing region and improve the magnetoresistance change rate.

(Embodiment 4)
(Magnetic resistance element)
FIG. 13 is a schematic cross-sectional view of the magnetoresistive element according to the present embodiment. With reference to FIG. 13, a magnetoresistive element 1E according to the present exemplary embodiment will be described.

  In the first embodiment described above, the stacked body provided above the substrate 10 is configured by stacking the antiferromagnetic layer 14 and the ferromagnetic layer 15 in this order from the substrate 10 side. However, the present invention is not limited to this, and as shown in FIG. 13, the structure is formed by laminating the ferromagnetic layer 15 and the antiferromagnetic layer 14 in this order from the substrate 10 side. May be. That is, one of the ferromagnetic layer 15 and the antiferromagnetic layer 14 covers the entire other main surface of the ferromagnetic layer 15 and the antiferromagnetic layer 14 so as to cover the entire other main surface. Provided on the other side of layer 14.

  The underlayer 13 in the present embodiment is provided for appropriately growing the crystals of the ferromagnetic layer 15 and the antiferromagnetic layer 14. The underlayer 13 can be omitted if the crystals of the ferromagnetic layer 15 and the antiferromagnetic layer 14 can be grown appropriately without using this. When the base layer 13 is omitted, the configuration of the magnetoresistive element 1E can be simplified.

  In the present embodiment, the ferromagnetic layer 15 functions as an underlayer for appropriately growing the crystal of the antiferromagnetic layer 14.

  Even in the case of the configuration as described above, the magnetoresistive element 1E according to the present embodiment can obtain substantially the same effect as that of the first embodiment.

(Embodiment 5)
(Magnetic resistance element)
FIG. 14 is a plan view of the magnetoresistive element according to the present embodiment. 15 is a cross-sectional view taken along line XV-XV shown in FIG. In FIG. 14, the protective layer 19 is omitted for convenience. A magnetoresistive element 1F according to the present exemplary embodiment will be described with reference to FIGS.

  As shown in FIGS. 14 and 15, when compared with the magnetoresistive element 1 according to the first exemplary embodiment, the magnetoresistive element 1 </ b> F has a plurality of stacked bodies 12 and a plurality of electrode portions alternately in a predetermined direction. The difference is that they are arranged side by side. Other configurations are substantially the same.

  The magnetoresistive element 1F includes a plurality of stacked bodies 12 and a plurality of electrode portions. The plurality of stacked bodies 12 are provided on the insulating layer 11. Note that the insulating layer 11 may be omitted when the substrate 10 is an insulating substrate.

  The plurality of stacked bodies 12 have a rectangular shape having two sets of opposite sides facing each other when viewed from the stacking direction. The plurality of stacked bodies 12 are provided to be separated from each other so that the magnetization directions M of the ferromagnetic layers 15 are aligned. The magnetization direction M intersects the direction in which the electrode portions are arranged.

  The plurality of stacked bodies 12 are provided in a straight line along the direction in which one of the two sets of opposite sides extends. Each of the plurality of stacked bodies 12 has one end 12a and the other end 12b in a direction in which one of the two sets of opposite sides extends.

  The plurality of stacked bodies 12 are formed by patterning a stacked body film in which the magnetization direction of the ferromagnetic film that becomes the ferromagnetic layer 15 is fixed in a predetermined direction by an exchange coupling magnetic field.

  As in the first embodiment, the multilayer film is formed by using a vacuum deposition method, a sputtering method, or the like to form a base film that becomes the base layer 13, an antiferromagnetic film that becomes the antiferromagnetic layer 14, and the ferromagnetic layer 15. It is formed by laminating a ferromagnetic film. As in the first embodiment, the laminated film is formed while applying a magnetic field, or heat treatment is performed while applying a magnetic field to the laminated film after the laminated film is formed. The magnetization direction of the ferromagnetic film is fixed by the exchange coupling magnetic field generated between the magnetic film and the magnetic film.

  The laminated bodies 12 adjacent to each other are connected by a connection electrode 41 as an electrode part. The connection electrode 41 connects the one end 12a side of one laminated body among the laminated bodies 12 adjacent to each other and the other end 12b side of the other laminated body facing the one end 12a side. The connection electrode 41 is provided so as to enter a gap between the adjacent stacked bodies 12.

  The width of the connection electrode 41 in the direction in which the plurality of stacked bodies 12 are arranged is preferably smaller than the width of the electrode portion 18 in the direction in which the plurality of stacked bodies 12 are arranged.

  Of the plurality of stacked bodies 12, the stacked body 12 positioned at both ends in the direction in which they are arranged is provided with electrode portions 18 respectively. One electrode portion 18a in the direction in which the plurality of stacked bodies 12 are arranged is provided on one end 12a side of the one stacked body 12 located at both ends. The electrode portion 18b on the other side in the direction in which the plurality of stacked bodies 12 are arranged is provided on the other end 12b side of the other stacked body 12 positioned at both ends.

  The protective layer 19 is provided so as to cover the plurality of stacked bodies 12, the plurality of connection electrodes 41, and the pair of electrode portions 18. The protective layer 19 is provided with a contact hole 19a so that a part of the pair of electrode portions 18 is exposed.

  Even in such a configuration, the magnetization direction of the ferromagnetic layer 15 can be fixed by the exchange coupling magnetic field. For this reason, since it is not necessary to provide a plurality of barber pole electrodes on each stacked body 12, it is possible to prevent the electric resistance of the barber pole electrodes from being added to the electric resistance of the ferromagnetic layer 15. As a result, even in the magnetoresistive element 1F according to the present exemplary embodiment, similarly to the first exemplary embodiment, it is possible to suppress a decrease in the magnetosensitive region and improve the magnetoresistance change rate.

  In addition, a plurality of stacked bodies 12 provided so as to be separated from each other and arranged in a straight line are connected by the connection electrode 41, so that magnetoresistive elements having the same length are formed by a single stacked body. Compared with the case, the influence by the shape anisotropy described later can be reduced. Thereby, in the area | region where the magnetoresistive element 1F responds linearly with respect to the change of a magnetic field, when the value 0 of a magnetic field is made into a reference | standard, the said reference | standard symmetry can be maintained favorable.

  FIG. 16 is a diagram for explaining the shape anisotropy. The shape anisotropy will be described with reference to FIG. When the ferromagnetic layer 15 has a rectangular shape having a short side direction and a long side direction, the magnetization of the ferromagnetic layer 15 is easily oriented in the longitudinal direction due to the shape anisotropy. Further, the longer the length in the longitudinal direction, the easier the direction of magnetization is in the longitudinal direction.

  For this reason, even when the magnetization direction M of the ferromagnetic layer 15 is fixed at an angle of θ1 with respect to the direction in which the detection current I flows (the direction in which the electrode portions are connected at the shortest), the actual magnetization direction is Inclined so as to approach the longitudinal direction, and fixed at an angle of θ2 with respect to the direction in which the detection current I flows. This state is equivalent to a state in which a magnetic bias is applied when viewed from a state in which the magnetization direction is fixed at an angle of θ1.

  FIG. 17 is a diagram illustrating the relationship between the magnetoresistance and the magnetic field when the direction of magnetization changes due to shape anisotropy. In FIG. 17, the change in magnetoresistance when not affected by shape anisotropy is indicated by a one-dot chain line, and the change in magnetoresistance when affected by shape anisotropy is indicated by a solid line.

  As described above, the state in which the magnetization direction M fixed due to the influence of the shape anisotropy is inclined can be considered to be equivalent to the state in which the magnetic bias is applied. In such a case, the line segment indicating the change in magnetoresistance moves from the position indicated by the alternate long and short dash line to the position indicated by the solid line. The greater the influence of shape anisotropy, the greater the portion indicated by the solid line moves in the direction of the arrow in the figure. On the other hand, as the influence of shape anisotropy is weaker, the portion indicated by the solid line moves smaller in the direction of the arrow in the figure. As described above, the influence of the shape anisotropy becomes stronger as the length of the stacked body 12 in the extending direction is longer.

  Like the magnetoresistive element 1 </ b> F according to the present embodiment, a plurality of stacked bodies 12 are linearly spaced apart from each other and connected by the connection electrode 41, thereby having the same length. Compared with the case where a magnetoresistive element is comprised with a single laminated body, the length of each laminated body 12 in the extending direction can be shortened. Thereby, the influence by shape anisotropy can be made small as the whole magnetoresistive element 1F.

  By reducing the influence of the shape anisotropy, the movement in the arrow direction in the line segment showing the change of the magnetoresistance in FIG. 17 can be reduced. As a result, in a region where the magnetoresistive element 1F linearly responds to a change in the magnetic field (a portion extending linearly in a line segment indicating the change in the magnetoresistance) with the magnetic field value 0 as a reference In addition, the reference symmetry can be maintained well. Furthermore, when the shape of the laminated body 12 is a substantially square shape when viewed from the lamination direction, the symmetry can be maintained better.

(Magnetic sensor)
FIG. 18 is a plan view of a magnetic sensor configured by using a plurality of magnetoresistive elements shown in FIG. With reference to FIG. 18, a magnetic sensor 100F1 configured using the magnetoresistive element 1F shown in FIG. 14 will be described.

  As shown in FIG. 18, the magnetic sensor 100F1 is provided by configuring a full bridge circuit using four magnetoresistive elements 1F1, 1F2, 1F3, and 1F4.

  The configuration of the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4 is substantially the same as the configuration of the magnetoresistive element 1F according to the fifth embodiment. The magnetization directions M of the ferromagnetic layers 15 included in the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4 are all in the same direction.

  The direction in which the plurality of stacked bodies 12 included in the magnetoresistive elements 1F1 and 1F3 are arranged is the same direction. For example, the plurality of stacked bodies 12 included in the magnetoresistive elements 1F1 and 1F3 are arranged in a straight line along the direction in which one of the two opposite sides of the stacked body 12 extends.

  The direction in which the plurality of stacked bodies 12 included in the magnetoresistive elements 1F2 and 1F4 are arranged is the same direction. For example, the plurality of laminated bodies 12 included in the magnetoresistive elements 1F2 and 1F4 are arranged in a straight line along the direction in which the other opposite side of the two opposite sides of the laminated body 12 extends.

  The direction in which the plurality of stacked bodies 12 included in the magnetoresistive elements 1F1 and 1F3 are arranged is orthogonal to the direction in which the plurality of stacked bodies 12 included in the magnetoresistive elements 1F2 and 1F4 are arranged.

  One end side of the magnetoresistive element 1F1 is electrically connected to an electrode pad P1 for taking out the output voltage Vout2 through the wiring pattern 3A. The other end side of the magnetoresistive element 1F1 is electrically connected to the electrode pad P3 for applying the power supply voltage Vcc via the wiring pattern 3B. One end side of the magnetoresistive element 1F4 is electrically connected to the electrode pad P1 through the wiring pattern 3A. The other end side of the magnetoresistive element 1F4 is electrically connected to the electrode pad P4 connected to the ground via the wiring pattern 3D.

  One end of the magnetoresistive element 1F2 is electrically connected to an electrode pad P2 for taking out the output voltage Vout1 through the wiring pattern 3C. The other end side of the magnetoresistive element 1F2 is electrically connected to the electrode pad P3 through the wiring pattern 3B. One end side of the magnetoresistive element 1F3 is electrically connected to the electrode pad P2 via the wiring pattern 3C. The other end side of the magnetoresistive element 1C is connected to the electrode pad P4 via the wiring pattern 3D.

  The magnetoresistive elements 1F1, 1F4 are connected in series via the wiring patterns 3B, 3A, 3D and the electrode pads P3, P1, P4, thereby forming a first series circuit (half bridge circuit). The magnetoresistive elements 1F2, 1F3 are connected in series via the wiring patterns 3B, 3C, 3D and the electrode pads P3, P2, P4, thereby forming a second series circuit (half-bridge circuit). The first series circuit (half-bridge circuit) and the second series circuit (half-bridge circuit) are connected in parallel via the electrode pads P3 and P4, thereby forming a full bridge circuit. The magnetoresistive elements 1F1 and 1F3 have a positive output property, and the magnetoresistive elements 1F2 and 1F4 have a negative output property.

  When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, output voltages Vout2 and Vout1 are extracted from the electrode pad P1 and the electrode pad P2 according to the magnetic field strength. The output voltages Vout2 and Vout1 are differentially amplified through a differential amplifier (not shown).

  As described above, in the magnetic sensor 100F1 according to the present embodiment, by configuring the bridge circuit using the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4 that do not include the barber pole electrodes, The decrease can be suppressed and the magnetoresistance change rate can be improved. In addition, resistance to changes in the external environment such as temperature can be improved.

  Further, since no barber pole electrode is provided on the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4, processing variations of the barber pole electrode do not occur. For this reason, variation in electric resistance of the magnetoresistive element is small, and when a full bridge circuit is configured, it is easy to adjust the offset voltage.

  Further, as described above, in each of the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4, the plurality of stacked bodies 12 are linearly spaced apart from each other and connected by the connection electrode 41. Compared with the case where the magnetoresistive elements having the same length are formed of a single laminated body, the length of each laminated body 12 in the extending direction can be shortened. Thereby, the influence by shape anisotropy can be made small as magnetoresistive element 1F1, 1F2, 1F3, and 1F4 as a whole. As a result, in the region where the magnetoresistive elements 1F1, 1F2, 1F3, and 1F4 respond linearly to changes in the magnetic field, when the magnetic field value 0 is used as a reference, the reference symmetry is favorably maintained. Can do.

(Second modification of magnetic sensor)
FIG. 19 is a plan view of a magnetic sensor according to a second modification. With reference to FIG. 19, the magnetic sensor 100F2 in a 2nd modification is demonstrated.

  As shown in FIG. 19, the magnetic sensor 100F2 in the second modified example is a full-bridge circuit using four magnetoresistive elements 1F11, 1F12, 1F13, and 1F14, similarly to the magnetic sensor 100F1 according to the fifth embodiment. It is provided by configuring.

  The magnetic sensor 100F2 differs from the magnetic sensor 100F1 according to the fifth embodiment in the configuration of the magnetoresistive elements 1F11, 1F12, 1F13, and 1F14.

  Each magnetoresistive element 1F11, 1F12, 1F13, 1F14 is formed in a meander shape by a plurality of magnetic sensing portions 20 arranged in parallel and a plurality of connection electrodes 40 that alternately connect the end portions of the magnetic sensing portions 20 adjacent to each other. Is formed.

  Each of the plurality of magnetic sensitive portions 20 has a strip shape having a lateral direction and a longitudinal direction. The connection electrode 40 has a strip shape shorter than the magnetic sensitive part 20. Each of the magnetoresistive elements 1F11, 1F12, 1F13, and 1F14 is formed in a meander shape by connecting the long strip-shaped magnetic sensitive portions 20 and the short strip-shaped connection electrodes 40 alternately and orthogonally.

  Each of the plurality of magnetic sensing parts 20 included in the magnetoresistive elements 1F11 and 1F13 extends along the same direction, and is provided side by side with a predetermined interval in a direction orthogonal to the extending direction. Each of the plurality of magnetic sensitive portions 20 included in the magnetoresistive elements 1F12 and 1F14 extends along the same direction, and is provided side by side with a predetermined interval in a direction orthogonal to the extending direction. The extending directions of the plurality of magnetic sensitive parts 20 included in the magnetoresistive elements 1F11 and 1F13 are orthogonal to the extending direction of the magnetic sensitive parts 20 included in the magnetoresistive elements 1F12 and 1F14.

  The magnetic sensing unit 20 includes a plurality of laminated bodies 12 and a plurality of connection electrodes 41. The plurality of stacked bodies 12 are provided apart from each other so that the magnetization directions M of the ferromagnetic layers are aligned. The plurality of stacked bodies 12 are provided in a straight line along the direction in which one of the two pairs of opposite sides extends. The connection electrode 41 electrically connects the stacked bodies 12 adjacent to each other.

  All the laminated bodies 12 included in the magnetoresistive elements 1F11, 1F12, 1F13, and 1F14 are provided so that the magnetization directions M are aligned.

  Even in this case, the magnetic sensor 100F2 in the second modified example can obtain substantially the same effect as the magnetic sensor 100F1.

(Embodiment 6)
FIG. 20 is a plan view of the magnetoresistive element according to the present embodiment. A magnetoresistive element 1G according to the present exemplary embodiment will be described with reference to FIG.

  As shown in FIG. 20, when the magnetoresistive element 1G according to the present exemplary embodiment is compared with the magnetoresistive element 1F according to the fifth exemplary embodiment, the arrangement of the plurality of stacked bodies 12 and the plurality of electrode portions is different. . Other configurations are almost the same.

  The plurality of stacked bodies 12 are provided apart from each other so that the magnetization directions of the ferromagnetic layers are aligned. Each of the plurality of stacked bodies 12 has a rectangular shape having two sets of opposite sides facing each other when viewed from the stacking direction.

  The plurality of stacked bodies 12 and the plurality of electrode portions are the same as the plurality of stacked bodies 12 and the plurality of electrode portions included in the magnetoresistive element 1F according to Embodiment 5, when viewed from the stacking direction of the stacked body 12. The electrode parts and the laminates 12 are alternately arranged along the direction in which one of the two sets of opposite sides extends. In addition, the plurality of stacked bodies 12 are provided so as to be shifted in the direction in which the other opposite side of the two sets of opposite sides extends.

  Specifically, the plurality of stacked bodies 12 are shifted at a predetermined pitch to one side in the direction in which the other opposite side of the two sets of opposite sides extends. In addition, it is preferable that each center of the some laminated body 12 is located in a line.

  As described above, the magnetoresistive element 1G according to the present exemplary embodiment is formed in a zigzag shape. Even in this case, the magnetization direction of the ferromagnetic layer can be fixed by the exchange coupling magnetic field. For this reason, since it is not necessary to provide a plurality of barber pole electrodes on each laminate 12, it is possible to prevent the electric resistance of the barber pole electrodes from being added to the electric resistance of the ferromagnetic layer. As a result, even in the magnetoresistive element 1G according to the present exemplary embodiment, similarly to the first exemplary embodiment, it is possible to suppress a decrease in the magnetosensitive region and improve the magnetoresistance change rate.

  In addition, a plurality of laminated bodies 12 provided so as to be spaced apart from each other and arranged in a predetermined direction are connected by connection electrodes 41, so that magnetoresistive elements having the same length are constituted by a single laminated body. Compared with the case where it does, the influence by the above-mentioned shape anisotropy can be reduced. Thereby, in the area | region where the magnetoresistive element 1G responds linearly with respect to the change of a magnetic field, when the value 0 of a magnetic field is made into a reference | standard, the said reference | standard symmetry can be maintained favorable. Furthermore, when the shape of the stacked body 12 is viewed from the stacking direction, the symmetry can be more favorably maintained by making the substantially square shape.

(Magnetic sensor)
FIG. 21 is a plan view of a magnetic sensor configured by using a plurality of magnetoresistive elements shown in FIG. With reference to FIG. 21, a magnetic sensor 100G1 constituted by using a plurality of magnetoresistive elements shown in FIG. 20 will be described.

  As shown in FIG. 21, the magnetic sensor 100G1 is provided by configuring a full bridge circuit using four magnetoresistive elements 1G1, 1G2, 1G3, and 1G4.

  When compared with the magnetic sensor 100F1 according to the fifth embodiment, the configuration of the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4 is different in the magnetic sensor 100G1.

  The configuration of the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4 is substantially the same as the configuration of the magnetoresistive element 1G. The magnetization directions M of the ferromagnetic layers 15 included in the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4 are all in the same direction.

  The direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G1 and 1G3 extend is the same direction. The plurality of connection electrodes 42 included in the magnetoresistive elements 1G1 and 1G3 extend in a direction orthogonal to the direction in which the connection electrodes 42 and the stacked body 12 are alternately arranged.

  The direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G2 and 1G4 extend is the same direction. The plurality of connection electrodes 42 included in the magnetoresistive elements 1G2 and 1G4 extend in a direction orthogonal to the direction in which the connection electrodes 42 and the stacked body 12 are alternately arranged.

  The direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G1 and 1G3 extend is orthogonal to the direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G2 and 1G4 extend.

  In the magnetic sensor 100G1, the magnetoresistive elements 1G1 and 1G3 have a positive output property, and the magnetoresistive elements 1G2 and 1G4 have a negative output property. When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, output voltages Vout2 and Vout1 are extracted from the electrode pad P1 and the electrode pad P2 according to the magnetic field strength. The output voltages Vout2 and Vout1 are differentially amplified through a differential amplifier (not shown).

  As described above, in the magnetic sensor 100G1 according to the present embodiment, by configuring the bridge circuit using the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4 that do not include the barber pole electrodes, The decrease can be suppressed and the magnetoresistance change rate can be improved. In addition, resistance to changes in the external environment such as temperature can be improved.

  Further, since the barber pole electrodes are not provided on the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4, processing variations of the barber pole electrodes do not occur. For this reason, variation in electric resistance of the magnetoresistive element is small, and when a full bridge circuit is configured, it is easy to adjust the offset voltage.

  Further, as described above, in each of the magnetoresistive elements 1G1, 1G2, 1G3, and 1G4, a plurality of stacked bodies 12 provided so as to be separated from each other and arranged in a predetermined direction are connected by the connection electrode 41. As a result, the influence of the shape anisotropy can be reduced as compared with the case where the magnetoresistive elements having the same length are formed of a single laminated body. Thereby, in the area | region where the magnetoresistive element 1G responds linearly with respect to the change of a magnetic field, when the value 0 of a magnetic field is made into a reference | standard, the said reference | standard symmetry can be maintained favorable.

(Third Modification of Magnetic Sensor)
FIG. 22 is a plan view of a magnetic sensor according to a third modification. With reference to FIG. 22, a magnetic sensor 100G2 according to a third modification will be described.

  As shown in FIG. 22, the magnetic sensor 100G2 in the third modified example is a full-bridge circuit using four magnetoresistive elements 1G11, 1G12, 1G13, and 1G14, similarly to the magnetic sensor 100G1 according to the sixth embodiment. It is provided by configuring.

  The magnetic sensor 100G2 differs from the magnetic sensor 100G1 according to the sixth embodiment in the configuration of the magnetoresistive elements 1G11, 1G12, 1G13, and 1G14.

  Each magnetoresistive element 1G11, 1G12, 1F13, 1G14 is formed in a meander shape by a plurality of magnetic sensing portions 20G arranged in parallel and a plurality of connection electrodes 40 alternately connecting the end portions of the magnetic sensing portions 20G adjacent to each other. Is formed.

  The magnetic sensing unit 20G is configured by connecting a plurality of stacked bodies 12 provided apart from each other in a zigzag manner by a plurality of connection electrodes 42. In the magnetic sensing unit 20G, the plurality of stacked bodies 12 are provided so as to be separated from each other in a direction extending along a direction in which one of the two opposite sides of the stacked body 12 extends. And it is shifted at a predetermined pitch on one side in the direction in which the other opposite side of the two sets of opposite sides extends. In the magnetic sensing part 20G, the plurality of connection electrodes 42 and the plurality of stacked bodies 12 are alternately arranged in a direction extending along the direction in which one of the two pairs of opposite sides extends.

  Each of the plurality of magnetosensitive portions 20G included in the magnetoresistive elements 1G11 and 1G13 extends in a zigzag shape so as to go in the same direction (DR1 direction), and is arranged at a predetermined interval in a direction orthogonal to the DR1 direction. Is provided.

  Each of the plurality of magnetosensitive parts 20G included in the magnetoresistive elements 1G12 and 1G14 extends in a zigzag shape so as to extend in the same direction (DR1 direction), and is arranged at a predetermined interval in a direction orthogonal to the DR1 direction. Is provided.

  The direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G11 and 1G13 extend is orthogonal to the direction in which the plurality of connection electrodes 42 included in the magnetoresistive elements 1G12 and 1G14 extend.

  All the laminated bodies 12 included in the magnetoresistive elements 1G11, 1G12, 1G13, and 1G14 are provided so that the magnetization directions M are aligned.

  Even in this case, the magnetic sensor 100G2 in the third modification can obtain substantially the same effect as the magnetic sensor 100G1.

(Fourth modification of magnetic sensor)
FIG. 23 is a plan view of a magnetic sensor according to a fourth modification. With reference to FIG. 23, the magnetic sensor 100H1 in a 4th modification is demonstrated.

  As shown in FIG. 23, the magnetic sensor 100H1 in the fourth modification is provided by configuring a full bridge circuit using four magnetoresistive elements 1H1, 1H2, 1H3, and 1H4.

  The magnetic sensor 100H1 is different from the magnetic sensor 100 according to the first embodiment in the configuration of the magnetoresistive elements 1H1, 1H2, 1H3, and 1H4.

  The laminated bodies 12H1, 12H2, 12H3, and 12H4 included in the magnetoresistive elements 1H1, 1H2, 1H3, and 1H4 are formed in a meander shape and a portion 21 that is formed in a meander shape so that the magnetization directions are aligned. The electrode base portion 22 is connected to both ends of the portion 21.

  The laminated bodies 12H1, 12H2, 12H3, and 12H4 are integrally formed by patterning the above-described laminated film in which the magnetization direction of the ferromagnetic film serving as the ferromagnetic layer 15 is fixed in a predetermined direction by an exchange coupling magnetic field. Is formed.

  The portion 21 formed in a meander shape includes a plurality of linear portions 21a arranged in parallel and a plurality of folded portions 21b that alternately connect the ends of the adjacent linear portions 21a.

  In the magnetoresistive elements 1H1 and 1H3, the plurality of linear portions 21a included in the stacked body 12 extend along the same direction. In the magnetoresistive elements 1H2 and 1H4, the plurality of linear portions 21a included in the stacked body 12 extend in the same direction.

  The extending direction of the linear portion 21a included in the magnetoresistive elements 1H1 and 1H3 is orthogonal to the extending direction of the linear portion 21a included in the magnetoresistive elements 1H2 and 1H4.

  The magnetoresistive element 1H1 and the magnetoresistive element 1H2 have a common electrode base 22. On the common electrode base 22 of the magnetoresistive element 1H1 and the magnetoresistive element 1H2, a wiring pattern 3B and an electrode pad P3 for applying the power supply voltage Vcc are formed.

  The magnetoresistive element 1H2 and the magnetoresistive element 1H3 have a common electrode base 22. On the common electrode base 22 of the magnetoresistive element 1H2 and the magnetoresistive element 1H3, an electrode pad P2 for taking out the wiring pattern 3C and the output voltage Vout1 is formed.

  The magnetoresistive element 1H3 and the magnetoresistive element 1H4 have a common electrode base 22. An electrode pad P4 connected to the wiring pattern 3D and the ground is formed on the common electrode base 22 of the magnetoresistive element 1H3 and the magnetoresistive element 1H4.

  The magnetoresistive element 1H4 and the magnetoresistive element 1H1 have a common electrode base 22. On the common electrode base 22 of the magnetoresistive element 1H4 and the magnetoresistive element 1H1, an electrode pad P1 for taking out the wiring pattern 3A and the output voltage Vout2 is formed.

  In the magnetic sensor 100H1, the magnetoresistive elements 1H1 and 1H3 have positive output characteristics, and the magnetoresistive elements 1H2 and 1H4 have negative output characteristics. When the power supply voltage Vcc is applied between the electrode pad P3 and the electrode pad P4, output voltages Vout2 and Vout1 are extracted from the electrode pad P1 and the electrode pad P2 according to the magnetic field strength. The output voltages Vout2 and Vout1 are differentially amplified through a differential amplifier (not shown).

  In the magnetic sensor 100H1 according to the present embodiment, a reduction in the magnetic sensing region is suppressed by configuring a bridge circuit using the magnetoresistive elements 1H1, 1H2, 1H3, and 1H4 that do not include the barber pole electrodes. In addition to improving the magnetoresistance change rate, it is possible to improve resistance to changes in the external environment such as temperature.

  Further, since no barber pole electrode is provided on the magnetoresistive elements 1H1, 1H2, 1H3, and 1H4, there is no variation in processing of the barber pole electrodes. For this reason, variation in electric resistance of the magnetoresistive element is small, and when a full bridge circuit is configured, it is easy to adjust the offset voltage.

  Further, by providing the electrode base portion 22 and forming the wiring patterns 3A, 3B, 3C, 3D and the electrode pads P1, P2, P3, P4 on the electrode base portion 22, the wiring pattern 3A and the electrode pad P1, the wiring It is possible to prevent a step from being formed in each of the pattern 3B and the electrode pad P3, the wiring pattern 3C and the electrode pad P2, and the wiring pattern 3D and the electrode pad 4. As a result, the wiring patterns 3A, 3B, 3C, 3D and the electrode pads P1, P2, P3, P4 can be prevented from being disconnected, and the reliability can be improved.

  In addition, since each of the stacked bodies 12H1, 12H2, 12H3, and 12H4 is formed by patterning the stacked body film in a meander shape, the end portions of the plurality of stacked bodies are alternately connected to each other by connection electrodes. Compared to the case where the resistance element is formed in a meander shape, there is no need to provide a connection electrode. For this reason, the connection electrode is not disconnected by the step of the laminated body. Also in this point, the reliability of the magnetoresistive element can be improved.

(Fifth Modification of Magnetic Sensor)
FIG. 24 is a plan view of a magnetic sensor according to a fifth modification. With reference to FIG. 24, the magnetic sensor 100H2 in a 5th modification is demonstrated.

  As shown in FIG. 24, when compared with the magnetic sensor 100H1 in the fourth modified example, the magnetic sensor 100H2 in the fifth modified example has an electric resistance higher than that of the ferromagnetic layer on each of the plurality of folded portions 21b. The difference is that a low conductive layer 44 is provided. Other configurations are almost the same.

  In each of the magnetoresistive elements 1H1, 1H2, 1H3, and 1H4, when the conductive layer 44 is not provided, in the stacked bodies 12H1, 12H2, 12H3, and 12H4, a ferromagnetic layer positioned in the linear portion 21a; A current flows through both of the ferromagnetic layers located in the folded portion 21b.

  The direction of the current flowing through the ferromagnetic layer positioned at the linear portion 21a is orthogonal to the direction of the current flowing through the ferromagnetic layer positioned at the folded portion 21b. For this reason, when an electric current flows through the ferromagnetic layer located in the folded portion 21b, a part of the output generated from the ferromagnetic layer located in the linear portion 21a is strong in the folded portion 21b. It is canceled out by the output generated from the magnetic layer. As a result, the extracted output voltages Vout2 and Vout1 may decrease.

  In the present embodiment, the conductive layer 44 having a lower electrical resistance than the ferromagnetic layer (more specifically, the second ferromagnetic layer) is positioned on the folded portion 21b (more specifically, the folded portion 21b). By providing on the second ferromagnetic layer, current flows through the conductive layer 44 in the folded portion 21b. For this reason, it is possible to prevent a part of the output generated from the ferromagnetic layer positioned in the linear portion 21a from being canceled by the output generated from the ferromagnetic layer positioned in the folded portion 21b.

  In the magnetoresistive element according to the fifth and sixth embodiments described above and the laminated body included in the magnetoresistive element included in the magnetic sensor according to the second to sixth modifications, the anti-strength is sequentially increased from the substrate 10 side. Although the case where the magnetic layer 14 and the ferromagnetic layer 15 are configured by being laminated in this order has been described as an example, the present invention is not limited to this, and as in Embodiment 4, from the substrate 10 side. The ferromagnetic layer 15 and the antiferromagnetic layer 14 may be laminated in this order.

  Although the embodiments and examples of the present invention have been described above, the embodiments and examples disclosed this time are illustrative and not restrictive in all respects. The scope of the present invention is defined by the terms of the claims, and includes meanings equivalent to the terms of the claims and all changes within the scope.

  1,1A, 1B, 1C, 1D, 1E, 1F, 1F1,1F2,1F3,1F4,1F11,1F12,1F13,1F14,1G, 1G1,1G2,1G3,1G4,1G11,1G12,1G13,1G14,1H1, 1H2, 1H3, 1H4 magnetoresistive element, 3A, 3B, 3C, 3D wiring pattern, 10 substrate, 11 insulating layer, 12, 12H1, 12H2, 12H3, 12H4 laminate, 13 underlayer, 14 antiferromagnetic layer, 15 Ferromagnetic material layer, 16 exchange coupling magnetic field adjustment layer, 17 barber pole electrode, 18 electrode part, 19 protective layer, 19a contact hole, 20, 20G magnetic sensing part, 21 part formed in meander shape, 21a linear part , 21b Folded part, 22 Electrode base part, 40, 41, 42 Connection electrode, 44 Conductive layer, 100, 10 0A, 100B, 100F1, 100F2, 100G1, 100G2, 100H1, 100H2 Magnetic sensor, 110 bus bar, 111 first bus bar part, 111e, 112e, 113e magnetic field, 112 parallel part, 113 third bus bar part, 114 first connecting part, 115 2nd connection part, 130 subtractor, 141 1st connection wiring, 142 2nd connection wiring, 150 Current sensor.

Claims (18)

A substrate,
A laminated body provided above the substrate and laminated with an antiferromagnetic layer and a ferromagnetic layer;
Electrode portions provided at both ends of the laminate, and
One of the ferromagnetic layer and the antiferromagnetic layer covers the entire other main surface of the ferromagnetic layer and the antiferromagnetic layer, and the ferromagnetic layer and the antiferromagnetic layer. Provided on the other side of
Magnetoresistance in which the magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field generated between the ferromagnetic layer and the antiferromagnetic layer intersects with the direction connecting the electrodes at the shortest element.   2. The magnetoresistive element according to claim 1, wherein in the stacked body, the antiferromagnetic material layer and the ferromagnetic material layer are sequentially stacked from the substrate side.   2. The magnetoresistive element according to claim 1, wherein in the stacked body, the ferromagnetic layer and the antiferromagnetic layer are sequentially stacked from the substrate side.   4. The angle according to claim 1, wherein an angle at which the magnetization direction of the ferromagnetic layer fixed by the exchange coupling magnetic field intersects the direction connecting the electrode portions at the shortest is 45 degrees. The magnetoresistive element as described.   The antiferromagnetic material layer includes an alloy containing any one element of Ni, Fe, Pd, Pt, and Ir and Mn, an alloy containing Pd, Pt, and Mn, or Cr, Pt, and Mn. The magnetoresistive element of any one of Claim 1 to 4 which consists of an alloy containing.   6. The magnetoresistive element according to claim 1, wherein the ferromagnetic layer is made of an alloy containing Ni and Fe, or an alloy containing Ni and Co. 6.   Exchange coupling magnetic field adjustment that is provided between the antiferromagnetic layer and the ferromagnetic layer and adjusts the magnitude of the exchange coupling magnetic field generated between the antiferromagnetic layer and the ferromagnetic layer. The magnetoresistive element according to claim 1, further comprising a layer.   The magnetoresistive element according to claim 7, wherein the exchange coupling magnetic field adjustment layer is a ferromagnetic layer made of Co or an alloy containing Co. A plurality of the laminates are provided,
Each of the plurality of stacked bodies has a rectangular shape having two sets of opposite sides facing each other when viewed from the stacking direction,
The plurality of stacked bodies are provided apart from each other so that the magnetization directions of the ferromagnetic layers are aligned,
9. The device according to claim 1, wherein when viewed from the stacking direction, the electrode portions and the stacked body are alternately arranged along a direction in which one of the two pairs of opposite sides extends. 2. The magnetoresistive element according to item 1.   The magnetoresistive element according to any one of claims 1 to 9, wherein the stacked body has a substantially square shape when viewed from a stacking direction.   The magnetoresistive element according to claim 9 or 10, wherein the plurality of stacked bodies are provided in a straight line along a direction in which one of the two pairs of opposite sides extends.   The magnetoresistive element according to claim 9 or 10, wherein the plurality of stacked bodies are provided so as to be shifted in a direction in which the other opposite side of the two sets of opposite sides extends.   The magnetoresistive element according to claim 1, wherein the laminated body includes a portion formed in a meander shape so that the magnetization directions are aligned. The laminate further includes an electrode base portion connected to both end sides of the portion formed in the meander shape,
The magnetoresistive element according to claim 13, wherein the electrode part is provided on the electrode base part. The portion formed in the meander shape is constituted by a plurality of linear portions arranged in parallel and a plurality of folded portions that alternately connect the ends of the linear portions adjacent to each other.
The magnetoresistive element according to claim 13 or 14, wherein a conductive layer having an electric resistance lower than that of the ferromagnetic layer is provided on each of the plurality of folded portions. A plurality of the laminates are provided,
A plurality of the stacked bodies are provided in parallel so that the magnetization directions are aligned, and the electrode portions are formed in a meander shape by alternately connecting the end portions of the stacked bodies adjacent to each other. The magnetoresistive element of any one of Claim 1 to 8.   A magnetic sensor comprising the magnetoresistive element according to claim 1. A bus bar through which the current to be measured flows,
A magnetic sensor comprising: the magnetic sensor according to claim 17.

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