JP2019056685A - Magnetic sensor - Google Patents
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 208
- 238000001514 detection method Methods 0.000 claims abstract description 64
- 239000000696 magnetic material Substances 0.000 claims description 18
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 39
- 230000005415 magnetization Effects 0.000 description 27
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005381 magnetic domain Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
本発明は磁気センサに関し、特に磁気センサのヨークの構成に関する。 The present invention relates to a magnetic sensor, and more particularly to a configuration of a yoke of the magnetic sensor.
磁気抵抗効果素子を備える磁気センサが知られている。磁気抵抗効果素子は磁界を検出する感磁膜を有している。感磁膜は、感磁膜の面内方向の磁界を検出する。近年、感磁膜の面内方向と直交する方向（Ｚ軸方向という場合がある）の磁界を検出する磁気センサが求められている。特許文献１には、磁気抵抗効果素子に隣接して、軟磁性体からなるヨークが設けられた磁気センサが開示されている。ヨークは、ヨークで吸収されたＺ軸方向の外部磁界の向きを感磁膜の面内方向に変換する。これによって、Ｚ軸方向の磁界を検出することができる。 A magnetic sensor provided with a magnetoresistive effect element is known. The magnetoresistive effect element has a magnetosensitive film for detecting a magnetic field. The magnetosensitive film detects a magnetic field in the in-plane direction of the magnetosensitive film. In recent years, there has been a demand for a magnetic sensor that detects a magnetic field in a direction orthogonal to the in-plane direction of the magnetosensitive film (sometimes referred to as a Z-axis direction). Patent Document 1 discloses a magnetic sensor in which a yoke made of a soft magnetic material is provided adjacent to a magnetoresistive element. The yoke converts the direction of the external magnetic field in the Z-axis direction absorbed by the yoke into the in-plane direction of the magnetosensitive film. Thereby, a magnetic field in the Z-axis direction can be detected.
ヨークを介して外部磁界を検出する磁気センサでは、センサ出力のヒステリシスが生じる。ヒステリシスとは、ある磁界強度に対するセンサ出力が、外部磁界が増加するときと、外部磁界が減少するときとで一致せず、前者と後者との間に偏差が生じる現象である。ヒステリシスが大きいと磁気センサの精度が低下する。 In a magnetic sensor that detects an external magnetic field via a yoke, hysteresis occurs in the sensor output. Hysteresis is a phenomenon in which the sensor output for a certain magnetic field strength does not match when the external magnetic field increases and when the external magnetic field decreases, and a deviation occurs between the former and the latter. If the hysteresis is large, the accuracy of the magnetic sensor decreases.
本発明は、ヨークを介してＺ軸方向の外部磁界を検出する磁気センサにおいて、磁界の検出精度を高めることを目的とする。 An object of the present invention is to improve the magnetic field detection accuracy in a magnetic sensor that detects an external magnetic field in the Z-axis direction via a yoke.
本発明の一態様によれば、磁気センサは第１の方向及び第１の方向と直交する第２の方向を含む面に配置され、第１の方向の磁界を検出する第１の磁界検出素子と、第１の方向において第１の磁界検出素子に隣接する軟磁性体と、を有している。軟磁性体の第１の方向の長さをＷ、第２の方向の長さをＬとしたときに、Ｌ／Ｗは１０以上である。 According to one aspect of the present invention, a magnetic sensor is disposed on a surface including a first direction and a second direction orthogonal to the first direction, and detects a magnetic field in the first direction. And a soft magnetic material adjacent to the first magnetic field detection element in the first direction. When the length of the soft magnetic material in the first direction is W and the length in the second direction is L, L / W is 10 or more.
本発明の他の態様によれば、磁気センサは第１の方向及び第１の方向と直交する第２の方向を含む面に配置され、第１の方向の磁界を検出する第１の磁界検出素子と、第１の方向において第１の磁界検出素子に隣接する軟磁性体と、を有している。軟磁性体の第１の方向の長さをＷ、第１の方向及び第２の方向と直交する第３の方向の長さをｈとしたときに、０．２７≦ｈ／Ｗ≦３である。 According to another aspect of the present invention, the magnetic sensor is disposed on a surface including a first direction and a second direction orthogonal to the first direction, and detects a first magnetic field that detects a magnetic field in the first direction. An element and a soft magnetic body adjacent to the first magnetic field detection element in the first direction. When the length in the first direction of the soft magnetic material is W and the length in the third direction orthogonal to the first direction and the second direction is h, 0.27 ≦ h / W ≦ 3 is there.
これらの発明によれば、ヨークを介してＺ軸方向の外部磁界を検出する磁気センサにおいて、磁界の検出精度を高めることができる。 According to these inventions, in the magnetic sensor that detects the external magnetic field in the Z-axis direction via the yoke, the magnetic field detection accuracy can be increased.
以下、図面を参照して本発明の磁気センサのいくつかの実施形態について説明する。以下の説明において、第１の方向は磁界検出素子が磁界を検出する感磁方向であり、磁界検出素子の配列方向と一致している。第２の方向は第１の方向と直交する方向である。第１及び第２の方向は磁界検出素子の設置面と平行である。第３の方向は第１の方向及び第２の方向と直交する方向であり、磁界検出素子を構成する複数の膜が積層される方向に一致している。第１の方向をＸ方向、第２の方向をＹ方向、第３の方向をＺ方向という。 Several embodiments of the magnetic sensor of the present invention will be described below with reference to the drawings. In the following description, the first direction is a magnetosensitive direction in which the magnetic field detection element detects a magnetic field, and coincides with the arrangement direction of the magnetic field detection elements. The second direction is a direction orthogonal to the first direction. The first and second directions are parallel to the installation surface of the magnetic field detection element. The third direction is a direction orthogonal to the first direction and the second direction, and coincides with a direction in which a plurality of films constituting the magnetic field detection element are stacked. The first direction is called the X direction, the second direction is called the Y direction, and the third direction is called the Z direction.
図１は磁気センサ１の概略斜視図を示す。磁気センサ１は、第１の方向Ｘに配列された第１〜第４の磁界検出素子２ａ，２ｂ，２ｃ，２ｄを有している。第１〜第４の磁界検出素子２ａ，２ｂ，２ｃ，２ｄは、第１の方向Ｘと第２の方向Ｙとを含む面に配置され、第１の方向Ｘの磁界を検出する。第１〜第４の磁界検出素子２ａ，２ｂ，２ｃ，２ｄは第１の方向Ｘより第２の方向Ｙに長い略長方形の平面形状を有している。第１〜第４の磁界検出素子２ａ，２ｂ，２ｃ，２ｄはブリッジ回路（図示せず）で相互に接続されており、これによって、磁気センサ１は外部磁界を測定することができる。 FIG. 1 shows a schematic perspective view of the magnetic sensor 1. The magnetic sensor 1 has first to fourth magnetic field detection elements 2a, 2b, 2c, 2d arranged in a first direction X. The first to fourth magnetic field detection elements 2a, 2b, 2c, and 2d are disposed on a plane including the first direction X and the second direction Y, and detect the magnetic field in the first direction X. The first to fourth magnetic field detection elements 2 a, 2 b, 2 c, and 2 d have a substantially rectangular planar shape that is longer in the second direction Y than in the first direction X. The first to fourth magnetic field detection elements 2a, 2b, 2c, and 2d are connected to each other by a bridge circuit (not shown), whereby the magnetic sensor 1 can measure an external magnetic field.
第１の磁界検出素子２ａと第２の磁界検出素子２ｂとの間には第１の軟磁性体３ａが、第３の磁界検出素子２ｃと第４の磁界検出素子２ｄとの間には第２の軟磁性体３ｂが配置されている。第１及び第２の軟磁性体３ａ，３ｂはＮｉＦｅなどで形成されている。第１の軟磁性体３ａは第１の方向Ｘにおいて第１及び第２の磁界検出素子２ａ，２ｂに隣接し、第２の軟磁性体３ｂは第１の方向Ｘにおいて第３及び第４の磁界検出素子２ｃ，２ｄに隣接している。第１及び第２の軟磁性体３ａ，３ｂは、これらの軟磁性体に吸収された第３の方向Ｚの磁束を磁界検出素子２ａ，２ｂ，２ｃ，２ｄの感磁方向、すなわち第１の方向Ｘに誘導するヨークとしての機能を有している。従って、本明細書では第１及び第２の軟磁性体３ａ，３ｂは第１及び第２のヨークと同義で用いられる。第１及び第２の軟磁性体３ａ，３ｂに入力される外部磁界は完全に第１の方向Ｘに向けられる必要はないが、第１及び第２の軟磁性体３ａ，３ｂを通過することによって第１の方向Ｘの成分が増加すればよい。第１の軟磁性体３ａは、第１及び第２の磁界検出素子２ａ，２ｂの第２の方向Ｙの全長に渡って第１の方向Ｘの成分を増加させるため、第１及び第２の磁界検出素子２ａ，２ｂの第２の方向Ｙの長さより長く、かつ第１の方向Ｘからみて第１及び第２の磁界検出素子２ａ，２ｂを包摂する長さであることが好ましい。同様に、第２の軟磁性体３ｂは、第３及び第４の磁界検出素子２ｃ，２ｄの第２の方向Ｙの全長に渡って第１の方向Ｘの成分を増加させるため、第３及び第４の磁界検出素子２ｃ，２ｄの第２の方向Ｙの長さより長く、かつ第１の方向Ｘからみて第３及び第４の磁界検出素子２ｃ，２ｄを包摂する長さであることが好ましい。 A first soft magnetic body 3a is provided between the first magnetic field detection element 2a and the second magnetic field detection element 2b, and a first soft magnetic body 3a is provided between the third magnetic field detection element 2c and the fourth magnetic field detection element 2d. 2 soft magnetic bodies 3b are arranged. The first and second soft magnetic bodies 3a and 3b are made of NiFe or the like. The first soft magnetic body 3a is adjacent to the first and second magnetic field detection elements 2a and 2b in the first direction X, and the second soft magnetic body 3b is the third and fourth magnetic fields in the first direction X. Adjacent to the magnetic field detection elements 2c and 2d. The first and second soft magnetic bodies 3a and 3b use the magnetic flux in the third direction Z absorbed by these soft magnetic bodies as the magnetic sensing directions of the magnetic field detecting elements 2a, 2b, 2c and 2d, that is, the first It functions as a yoke for guiding in the direction X. Accordingly, in the present specification, the first and second soft magnetic bodies 3a and 3b are used synonymously with the first and second yokes. The external magnetic field input to the first and second soft magnetic bodies 3a and 3b does not have to be completely directed in the first direction X, but passes through the first and second soft magnetic bodies 3a and 3b. Therefore, the component in the first direction X may be increased. The first soft magnetic body 3a increases the components in the first direction X over the entire length in the second direction Y of the first and second magnetic field detection elements 2a and 2b. The length is preferably longer than the length of the magnetic field detection elements 2a and 2b in the second direction Y, and includes the first and second magnetic field detection elements 2a and 2b when viewed from the first direction X. Similarly, the second soft magnetic body 3b increases the components in the first direction X over the entire length in the second direction Y of the third and fourth magnetic field detection elements 2c and 2d. The length of the fourth magnetic field detection elements 2c and 2d is preferably longer than the length of the second direction Y and includes the third and fourth magnetic field detection elements 2c and 2d when viewed from the first direction X. .
図２は磁気センサ１の図１のＡ−Ａ線で切断したＸ−Ｚ面の断面図を示す。図２には第１及び第２の磁界検出素子２ａ，２ｂと第１のヨーク３ａだけが示されているが、第３及び第４の磁界検出素子２ｃ，２ｄと第２のヨーク３ｂはそれぞれ、第１及び第２の磁界検出素子２ａ，２ｂと第１のヨーク３ａと同様に構成され、配置されている。第１及び第２の磁界検出素子２ａ，２ｂは基板４の上に第１の絶縁層８を介して形成されている。第１及び第２の磁界検出素子２ａ，２ｂの側方には第２の絶縁層９が形成されている。第１及び第２の磁界検出素子２ａ，２ｂの上方には第３の絶縁層１０が形成されている。第１のヨーク３ａは第３の絶縁層１０上に設けられている。第１のヨーク３ａはメッキ工程によって形成される。このため、第３の絶縁層１０と第１のヨーク３ａとの間にはメッキ工程で用いられる電極膜１３が設けられている。第１のヨーク３ａの側方には第４の絶縁層１１が形成されている。第１のヨーク３ａ及び第４の絶縁層１１の上方には第５の絶縁層１２が形成されている。第１〜第５の絶縁層８〜１２は例えばＡｌ２Ｏ３で形成されている。 FIG. 2 is a cross-sectional view of the XZ plane of the magnetic sensor 1 taken along line AA in FIG. FIG. 2 shows only the first and second magnetic field detection elements 2a and 2b and the first yoke 3a, but the third and fourth magnetic field detection elements 2c and 2d and the second yoke 3b are respectively The first and second magnetic field detection elements 2a and 2b and the first yoke 3a are configured and arranged in the same manner. The first and second magnetic field detection elements 2 a and 2 b are formed on the substrate 4 via the first insulating layer 8. A second insulating layer 9 is formed on the side of the first and second magnetic field detection elements 2a and 2b. A third insulating layer 10 is formed above the first and second magnetic field detection elements 2a and 2b. The first yoke 3 a is provided on the third insulating layer 10. The first yoke 3a is formed by a plating process. Therefore, an electrode film 13 used in the plating process is provided between the third insulating layer 10 and the first yoke 3a. A fourth insulating layer 11 is formed on the side of the first yoke 3a. A fifth insulating layer 12 is formed above the first yoke 3 a and the fourth insulating layer 11. The first to fifth insulating layers 8 to 12 are made of, for example, Al 2 O 3 .
第１の磁界検出素子２ａは第１の方向Ｘの磁界を検出する第１の感磁膜５ａと、第３の方向Ｚに第１の感磁膜５ａを挟み、第１の感磁膜５ａにセンス電流を供給する第１のリード対６ａ，７ａと、を有している。第２の磁界検出素子２ｂは第１の方向Ｘの磁界を検出する第２の感磁膜５ｂと、第３の方向Ｚに第２の感磁膜５ｂを挟み、第２の感磁膜５ｂにセンス電流を供給する第２のリード対６ｂ，７ｂと、を有している。センス電流は第３の方向Ｚに流れる。第１のヨーク３ａは第１の方向Ｘにおいて、第１の磁界検出素子２ａと第２の磁界検出素子２ｂとの間に配置されている。また、Ｚ方向からみて、第１のヨーク３ａは、Ｘ方向に関し第１の磁界検出素子２ａのリード対６ａ，７ａと第２の磁界検出素子２ｂのリード対６ｂ，７ｂとの間にある。さらに、Ｚ方向からみて、第１のヨーク３ａは、第１の磁界検出素子２ａのリード対６ａ，７ａと第２の磁界検出素子２ｂのリード対６ｂ，７ｂのいずれとも重なっていない。 The first magnetic field detecting element 2a sandwiches the first magnetosensitive film 5a for detecting the magnetic field in the first direction X and the first magnetosensitive film 5a in the third direction Z, and the first magnetosensitive film 5a. And a first lead pair 6a and 7a for supplying a sense current to each other. The second magnetic field detection element 2b sandwiches the second magnetic film 5b for detecting the magnetic field in the first direction X and the second magnetic film 5b in the third direction Z, and the second magnetic film 5b. And a second lead pair 6b, 7b for supplying a sense current. The sense current flows in the third direction Z. The first yoke 3a is arranged in the first direction X between the first magnetic field detection element 2a and the second magnetic field detection element 2b. Further, when viewed from the Z direction, the first yoke 3a is located between the lead pair 6a, 7a of the first magnetic field detection element 2a and the lead pair 6b, 7b of the second magnetic field detection element 2b in the X direction. Further, when viewed from the Z direction, the first yoke 3a does not overlap any of the lead pairs 6a and 7a of the first magnetic field detection element 2a and the lead pairs 6b and 7b of the second magnetic field detection element 2b.
次に、第１及び第２の磁界検出素子２ａ，２ｂについて説明する。第１の磁界検出素子２ａと第２の磁界検出素子２ｂは同じ構造であるため、ここでは第１の磁界検出素子２ａについて説明する。図３は第１の磁界検出素子２ａのより詳細な構成を示す断面図である。第１の磁界検出素子２ａの第１の感磁膜５ａは、磁化自由層２４と、磁化固定層２２と、磁化自由層２４と磁化固定層２２とに挟まれ、磁気抵抗効果を有するスペーサ層２３と、を有する。磁化自由層２４はＮｉＦｅなどの軟磁性体で形成され、外部磁界に対する磁化方向が第１の方向Ｘと第２の方向Ｙを含む平面内で回転する。磁化自由層２４は第２の方向Ｙの長さが第１の方向Ｘの長さより十分に長く、形状異方性によって磁化方向が第２の方向Ｙに揃えられている。磁化方向を第２の方向Ｙに揃えるため、磁化自由層２４のＹ方向両側に硬磁性体からなるバイアス層を設けてもよい。磁化固定層２２はＣｏＦｅなどの軟磁性体で形成され、磁化方向が外部磁界に対し固定されている。スペーサ層２３はＡｌ２Ｏ３などの非磁性絶縁体で形成されるトンネルバリア層である。従って、本実施形態の第１の磁界検出素子２ａはＴＭＲ（Tunnel Magneto Resistive）素子である。なお、第１の磁界検出素子２ａは第１の方向Ｘの磁界を検出することができる限り、ＴＭＲ素子に限定されず、例えばスペーサ層２３にＣｕなどの非磁性金属層を用いたＧＭＲ（Giant Magneto Resistive）素子や、ＡＭＲ（An-Isotropic Magneto Resistive）素子などの磁界検出素子であってもよい。 Next, the first and second magnetic field detection elements 2a and 2b will be described. Since the first magnetic field detection element 2a and the second magnetic field detection element 2b have the same structure, only the first magnetic field detection element 2a will be described here. FIG. 3 is a cross-sectional view showing a more detailed configuration of the first magnetic field detection element 2a. The first magnetosensitive film 5a of the first magnetic field detection element 2a is sandwiched between the magnetization free layer 24, the magnetization fixed layer 22, the magnetization free layer 24, and the magnetization fixed layer 22, and has a magnetoresistive effect. 23. The magnetization free layer 24 is formed of a soft magnetic material such as NiFe, and the magnetization direction with respect to the external magnetic field rotates within a plane including the first direction X and the second direction Y. The length of the magnetization free layer 24 in the second direction Y is sufficiently longer than the length in the first direction X, and the magnetization direction is aligned with the second direction Y by shape anisotropy. In order to align the magnetization direction with the second direction Y, a bias layer made of a hard magnetic material may be provided on both sides of the magnetization free layer 24 in the Y direction. The magnetization fixed layer 22 is formed of a soft magnetic material such as CoFe, and the magnetization direction is fixed with respect to an external magnetic field. The spacer layer 23 is a tunnel barrier layer formed of a nonmagnetic insulator such as Al 2 O 3 . Therefore, the first magnetic field detection element 2a of the present embodiment is a TMR (Tunnel Magneto Resistive) element. The first magnetic field detection element 2a is not limited to a TMR element as long as it can detect a magnetic field in the first direction X. For example, a GMR (Giant) using a nonmagnetic metal layer such as Cu for the spacer layer 23 is used. A magnetic field detection element such as a Magneto Resistive (AMO) element or an AMR (An-Isotropic Magneto Resistive) element may be used.
磁化固定層２２は第１の磁化固定層２２ａと、非磁性中間層２２ｂと、第２の磁化固定層２２ｃがこの順番に積層されたもので、第１の磁化固定層２２ａはＴａやＲｕで形成された下地層２１の上に形成されている。第２の磁化固定層２２ｃはスペーサ層２３と接している。第１の磁化固定層２２ａと第２の磁化固定層２２ｃはＣｏＦｅなどの軟磁性体で形成され、非磁性中間層２２ｂはＲｕで形成されている。第１の磁化固定層２２ａと第２の磁化固定層２２ｃは非磁性中間層２２ｂを介して反強磁性結合をする。第１の磁化固定層２２ａの下に、ＩｒＭｎなどからなり、第１の磁化固定層２２ａと交換結合をする反強磁性層（図示せず）を設けてもよい。磁化自由層２４はＴａなどで形成された保護層２５で覆われている。 The magnetization fixed layer 22 is formed by laminating a first magnetization fixed layer 22a, a nonmagnetic intermediate layer 22b, and a second magnetization fixed layer 22c in this order. The first magnetization fixed layer 22a is made of Ta or Ru. It is formed on the formed underlayer 21. The second magnetization fixed layer 22 c is in contact with the spacer layer 23. The first magnetization fixed layer 22a and the second magnetization fixed layer 22c are made of a soft magnetic material such as CoFe, and the nonmagnetic intermediate layer 22b is made of Ru. The first magnetization fixed layer 22a and the second magnetization fixed layer 22c are antiferromagnetically coupled via the nonmagnetic intermediate layer 22b. An antiferromagnetic layer (not shown) made of IrMn or the like and exchange-coupled with the first magnetization fixed layer 22a may be provided under the first magnetization fixed layer 22a. The magnetization free layer 24 is covered with a protective layer 25 made of Ta or the like.
このように構成された磁気センサ１に第３の方向Ｚから外部磁界が印加されると、磁束は第１のヨーク３ａに吸収され（図２に太い矢印で示す）、第１の方向Ｘに曲げられて、第１のヨーク３ａを出る。第１及び第２の磁界検出素子２ａ，２ｂには第１のヨーク３ａを通過して第１の方向Ｘの成分が増加した磁界が印加されるため、第１のヨーク３ａがない場合と比べてより効率的に第１の方向Ｘの磁界成分を検出することができる。従って、磁気センサ１は第１の方向Ｘの磁界強度に対応した第３の方向Ｚの外部磁界を検出することができる。 When an external magnetic field is applied from the third direction Z to the magnetic sensor 1 configured in this way, the magnetic flux is absorbed by the first yoke 3a (indicated by a thick arrow in FIG. 2), and in the first direction X. Bent out of the first yoke 3a. The first and second magnetic field detection elements 2a and 2b are applied with a magnetic field that has passed through the first yoke 3a and has an increased component in the first direction X, so that compared to the case without the first yoke 3a. Thus, the magnetic field component in the first direction X can be detected more efficiently. Therefore, the magnetic sensor 1 can detect the external magnetic field in the third direction Z corresponding to the magnetic field intensity in the first direction X.
ここで、軟磁性体からなるヨークを通過した外部磁界を検出する磁気センサにおいては、センサ出力がヒステリシスを有するという特性がある。図４（ａ）は外部磁界とセンサ出力の関係を示す模式図を、図４（ｂ）は図４（ａ）のＡ部の拡大図を示している。第３の方向の外部磁界Ｈを増加させながらヨークに印加したときのセンサ出力をＶ１（Ｈ）、第３の方向の外部磁界Ｈを減少させながらヨークに印加したときのセンサ出力をＶ２（Ｈ）とする。センサ出力は外部磁界Ｈの関数である。Ｖ１（Ｈ）とＶ２（Ｈ）は完全に一致することが好ましいが、実際にはＶ１（Ｈ）とＶ２（Ｈ）は一致しない。すなわち、ΔＶ＝｜Ｖ１（Ｈ）−Ｖ２（Ｈ）｜がゼロにならない外部磁界Ｈの範囲が存在する。ΔＶがゼロでない場合、磁気センサ１は外部磁界が増加しているか減少しているかによって、Ｖ１（Ｈ）またはＶ２（Ｈ）を出力する。このため、ΔＶが大きい場合、磁気センサ１の精度が低下することになる。 Here, a magnetic sensor that detects an external magnetic field that has passed through a yoke made of a soft magnetic material has a characteristic that the sensor output has hysteresis. 4A is a schematic diagram showing the relationship between the external magnetic field and the sensor output, and FIG. 4B is an enlarged view of a portion A in FIG. 4A. The sensor output when applied to the yoke while increasing the external magnetic field H in the third direction is V1 (H), and the sensor output when applied to the yoke while decreasing the external magnetic field H in the third direction is V2 (H ). The sensor output is a function of the external magnetic field H. Although V1 (H) and V2 (H) preferably coincide completely, V1 (H) and V2 (H) do not actually coincide. That is, there is a range of the external magnetic field H where ΔV = | V1 (H) −V2 (H) | is not zero. When ΔV is not zero, the magnetic sensor 1 outputs V1 (H) or V2 (H) depending on whether the external magnetic field is increasing or decreasing. For this reason, when ΔV is large, the accuracy of the magnetic sensor 1 is lowered.
本実施形態の磁気センサ１は、このようなセンサ出力のヒステリシスを低減させるため、第１の軟磁性体３ａの寸法ないし形状に特徴を有する。第２の軟磁性体３ｂの寸法ないし形状は第１の軟磁性体３ａの寸法ないし形状と同一でもよいが、以下の特徴を満たす限り第１の軟磁性体３ａの寸法ないし形状と異なっていてもよい。以下では、第１の軟磁性体３ａを例に説明する。第１の軟磁性体３ａは概ね直方体の形状を有している。第１の方向Ｘの長さ（幅）をＷ、第２の方向Ｙの長さをＬ、第３の方向Ｚの長さ（高さ）をｈとする。 The magnetic sensor 1 of the present embodiment is characterized by the size or shape of the first soft magnetic body 3a in order to reduce the hysteresis of the sensor output. The size or shape of the second soft magnetic body 3b may be the same as the size or shape of the first soft magnetic body 3a, but is different from the size or shape of the first soft magnetic body 3a as long as the following characteristics are satisfied. Also good. Hereinafter, the first soft magnetic body 3a will be described as an example. The first soft magnetic body 3a has a substantially rectangular parallelepiped shape. The length (width) in the first direction X is W, the length in the second direction Y is L, and the length (height) in the third direction Z is h.
図５はＬ／ＷとＨｙmaxの関係を示すグラフであり、横軸にＬ／Ｗを、縦軸にＨｙmaxをとっている。Ｈｙは出力レンジＶrangeに対するΔＶの比率（＝ΔＶ／Ｖrange）として定義され、出力レンジＶrangeに対するヒステリシスの相対的な大きさを示している。ここで、出力レンジＶrangeはセンサ出力Ｖの２つの飽和点ＶＨ、ＶＬの差ＶＨ−ＶＬである。ＶＬ、ＶＨにそれぞれ対応する外部磁界ＨＬとＨＨ（図４参照）との間で外部磁界Ｈを変化させながら、各ＨにおけるΔＶを求め、図５の縦軸にはＨｙ＝ΔＶ／Ｖrangeの最大値Ｈｙmaxを示している。すなわち、Ｈｙmaxは以下のように定義される。 FIG. 5 is a graph showing the relationship between L / W and Hymax, with L / W on the horizontal axis and Hymax on the vertical axis. Hy is defined as the ratio of ΔV to the output range Vrange (= ΔV / Vrange), and indicates the relative magnitude of the hysteresis with respect to the output range Vrange. Here, the output range Vrange is a difference VH−VL between two saturation points VH and VL of the sensor output V. ΔV at each H is obtained while changing the external magnetic field H between the external magnetic fields HL and HH (see FIG. 4) corresponding to VL and VH, respectively, and the vertical axis of FIG. 5 shows Hy = ΔV / Vrange maximum The value Hymax is shown. That is, Hymax is defined as follows.
ここで、Ｖ１（Ｈ）は、第１の軟磁性体３ａに第３の方向Ｚの成分が時間とともに増加する外部磁界Ｈを印加したときのセンサ出力、Ｖ２（Ｈ）は、第１の軟磁性体３ａに第３の方向Ｚの成分が時間とともに減少する外部磁界Ｈを印加したときのセンサ出力である。 Here, V1 (H) is a sensor output when an external magnetic field H whose component in the third direction Z increases with time is applied to the first soft magnetic body 3a, and V2 (H) is the first soft magnetic body 3a. This is a sensor output when an external magnetic field H in which the component in the third direction Z decreases with time is applied to the magnetic body 3a.
図５は第１の軟磁性体３ａの長さＬを一定（７８μｍ）として幅Ｗを変化させている。アスペクトレシオＬ／ＷとＨｙmaxの関係を示す近似曲線は多項式で近似している。Ｈｙmaxの上限は１．２５（％）程度とするのが好ましい。本実施形態の磁気センサ１は例えばカメラモジュールのレンズ位置の検出に用いることができる。レンズの移動量が±２００μｍである場合、Ｈｙmaxが１．２５（％）であれば、レンズの位置検出誤差を５μｍ以下とすることができる。これは、一般的なカメラモジュールにおいて十分な精度である。図５より、Ｌ／Ｗは１０以上が好ましい。また、ＨｙmaxはＬ／Ｗの増加に伴い減少するが、Ｌ／Ｗが２０以上の範囲ではＨｙmaxがかなり飽和しており、Ｈｙmaxを十分に小さく抑えられる。従って、Ｌ／Ｗを２０以上とすることがさらに好ましい。Ｌ／Ｗの増加に従いＨｙmaxが飽和していくため、Ｌ／Ｗを極端に大きくしても効果はない。一方、製造上の理由から幅Ｗを小さくすることは難しいため、Ｌ／Ｗを大きくすることは長さＬの増加に繋がり、磁気センサ１の外形寸法に影響を与える可能性がある。従って、Ｌ／Ｗは４０以下とすることが望ましい。 In FIG. 5, the length W is changed with the length L of the first soft magnetic body 3a being constant (78 μm). The approximate curve indicating the relationship between the aspect ratio L / W and Hymax is approximated by a polynomial. The upper limit of Hymax is preferably about 1.25 (%). The magnetic sensor 1 of this embodiment can be used for detecting the lens position of a camera module, for example. When the lens movement amount is ± 200 μm, if Hymax is 1.25 (%), the lens position detection error can be 5 μm or less. This is sufficient accuracy in a general camera module. From FIG. 5, L / W is preferably 10 or more. Hymax decreases as L / W increases, but Hymax is considerably saturated when L / W is 20 or more, and Hymax can be kept sufficiently small. Therefore, it is more preferable that L / W is 20 or more. Since Hymax saturates as L / W increases, there is no effect even if L / W is made extremely large. On the other hand, since it is difficult to reduce the width W for manufacturing reasons, increasing L / W leads to an increase in the length L, which may affect the outer dimensions of the magnetic sensor 1. Therefore, it is desirable that L / W be 40 or less.
図６はｈ／ＷとＨｙmaxの関係を示すグラフであり、横軸にｈ／Ｗを、縦軸にＨｙmaxをとっている。Ｈｙmaxは図５の場合と同様に求めている。第１の軟磁性体３ａの長さＬを一定（７８μｍ）、高さｈを一定（２．５μｍ）として幅Ｗを変化させている。アスペクトレシオｈ／ＷとＨｙmaxの関係を示す近似曲線は多項式で近似している。 FIG. 6 is a graph showing the relationship between h / W and Hymax, with h / W on the horizontal axis and Hymax on the vertical axis. Hymax is obtained in the same manner as in FIG. The width W is changed with the length L of the first soft magnetic body 3a being constant (78 μm) and the height h being constant (2.5 μm). The approximate curve indicating the relationship between the aspect ratio h / W and Hymax is approximated by a polynomial.
図６を参照すると、ｈ／Ｗは０．２７以上が好ましい。ｈ／Ｗの増加に伴いＨｙmaxは低下する。しかし、ｈ／Ｗを大きくするためには幅Ｗを小さくするか、高さｈを高くする必要がある。いずれも、製造上の理由から難しいため、ｈ／Ｗの上限値は３とすることが望ましい。また、ｈ／Ｗを大きくしていくとＨｙmaxは飽和する傾向にあるため、実用的には０．２７≦ｈ／Ｗ＜１．５程度とすることも好ましい。 Referring to FIG. 6, h / W is preferably 0.27 or more. Hymax decreases as h / W increases. However, in order to increase h / W, it is necessary to reduce the width W or increase the height h. Since both are difficult for manufacturing reasons, the upper limit of h / W is preferably set to 3. In addition, Hymax tends to saturate as h / W is increased, so it is also preferable that practically 0.27 ≦ h / W <1.5.
第１の軟磁性体３ａは直方体の形状以外の様々な形状を取ることができる。すなわち、一般的には、第１の方向Ｘに延びる辺と第２の方向Ｙに延びる辺と第３の方向Ｚに延びる辺のいずれか１つは直線でなく、曲線、または直線と曲線の組み合わせであってもよい。あるいは、第１の軟磁性体３ａは第１の方向Ｘと第２の方向Ｙと第３の方向Ｚの少なくともいずれかに関し非対称であってもよい。このような場合、第１の方向Ｘの長さ（幅）Ｗは、第２の方向Ｙまたは第３の方向Ｚにおける平均値とすることができる。第２の方向Ｙまたは第３の方向Ｚに関し幅が一定の部分が過半を占める場合は、当該一定の部分の幅を幅Ｗとすることもできる。第２の方向Ｙの長さＬ、第３の方向Ｚの長さ（高さ）ｈについても同様に考えることができる。 The first soft magnetic body 3a can take various shapes other than a rectangular parallelepiped shape. That is, in general, any one of the side extending in the first direction X, the side extending in the second direction Y, and the side extending in the third direction Z is not a straight line, but a curved line or a straight line and a curved line. It may be a combination. Alternatively, the first soft magnetic body 3a may be asymmetric with respect to at least one of the first direction X, the second direction Y, and the third direction Z. In such a case, the length (width) W in the first direction X can be an average value in the second direction Y or the third direction Z. When a portion with a constant width in the second direction Y or the third direction Z occupies the majority, the width of the constant portion can be set as the width W. The same applies to the length L in the second direction Y and the length (height) h in the third direction Z.
Ｌ／Ｗ及びｈ／Ｗの範囲を制御することでセンサ出力のヒステリシスが抑えられる理由を説明する。図７（ａ）は第３の方向Ｚからみた比較例の磁気センサの概念図であり、図７（ｂ）は第３の方向Ｚからみた本実施形態の磁気センサの概念図を示す。比較例のヨーク１０３ａと本実施形態のヨーク３ａの内部は複数の磁区に分割されており、各磁区の磁化方向は例えば図示のようになっている。すなわち、比較例では各磁区の磁化方向は第１の方向Ｘ、第２の方向Ｙ、第３の方向Ｚに関しランダムな方向を向いている。この状態で第３の方向の外部磁界が印加されると、センサ出力のヒステリシスが生じやすくなる。これに対して、本実施形態ではＬ／Ｗとｈ／Ｗの範囲を上述のように設定しているため、磁界が変化したときのヨーク３ａの磁化の変化が揃いやすくなりヒステリシスが抑えられると考えられる。 The reason why the hysteresis of the sensor output can be suppressed by controlling the ranges of L / W and h / W will be described. FIG. 7A is a conceptual diagram of a magnetic sensor of a comparative example viewed from the third direction Z. FIG. 7B is a conceptual diagram of the magnetic sensor of the present embodiment viewed from the third direction Z. The inside of the yoke 103a of the comparative example and the yoke 3a of the present embodiment is divided into a plurality of magnetic domains, and the magnetization direction of each magnetic domain is, for example, as illustrated. That is, in the comparative example, the magnetization direction of each magnetic domain is in a random direction with respect to the first direction X, the second direction Y, and the third direction Z. When an external magnetic field in the third direction is applied in this state, hysteresis of the sensor output tends to occur. On the other hand, in this embodiment, since the ranges of L / W and h / W are set as described above, when the magnetic field changes, the change in magnetization of the yoke 3a is easily aligned, and hysteresis is suppressed. Conceivable.
１ 磁気センサ
２ａ，２ｂ，２ｃ，２ｄ 第１〜第４の磁界検出素子
３ａ，３ｂ 第１及び第２の軟磁性体（ヨーク）
Ｗ ヨークの第１の方向Ｘの長さ（幅）
Ｌ ヨークの第２の方向Ｙの長
ｈ ヨークの第３の方向Ｚの長さ（高さ）
DESCRIPTION OF SYMBOLS 1 Magnetic sensor 2a, 2b, 2c, 2d 1st-4th magnetic field detection element 3a, 3b 1st and 2nd soft magnetic body (yoke)
W Length (width) of yoke in first direction X
L Length of yoke in second direction Y h Length of yoke in third direction Z (height)
本発明の一態様によれば、磁気センサは第１の方向及び第１の方向と直交する第２の方向を含む面に配置され、第１の方向の磁界を検出する第１の磁界検出素子と、第１の方向において第１の磁界検出素子に隣接する概ね直方体形状の軟磁性体と、を有している。軟磁性体の第１の方向の長さをＷ、第２の方向の長さをＬとしたときに、Ｌ／Ｗは１０以上である。 According to one aspect of the present invention, a magnetic sensor is disposed on a surface including a first direction and a second direction orthogonal to the first direction, and detects a magnetic field in the first direction. And a soft magnetic body having a substantially rectangular parallelepiped shape adjacent to the first magnetic field detection element in the first direction. When the length of the soft magnetic material in the first direction is W and the length in the second direction is L, L / W is 10 or more.
本発明の他の態様によれば、磁気センサは第１の方向及び第１の方向と直交する第２の方向を含む面に配置され、第１の方向の磁界を検出する第１の磁界検出素子と、第１の方向において第１の磁界検出素子に隣接する概ね直方体形状の軟磁性体と、を有している。軟磁性体の第１の方向の長さをＷ、第１の方向及び第２の方向と直交する第３の方向の長さをｈとしたときに、０．２７≦ｈ／Ｗ≦３である。 According to another aspect of the present invention, the magnetic sensor is disposed on a surface including a first direction and a second direction orthogonal to the first direction, and detects a first magnetic field that detects a magnetic field in the first direction. And a soft magnetic material having a substantially rectangular parallelepiped shape adjacent to the first magnetic field detection element in the first direction. When the length in the first direction of the soft magnetic material is W and the length in the third direction orthogonal to the first direction and the second direction is h, 0.27 ≦ h / W ≦ 3 is there.
本発明の一態様によれば、磁気センサは第１の方向及び第１の方向と直交する第２の方向を含む面に配置され、第１の方向の磁界を検出する第１の磁界検出素子と、第１の方向において第１の磁界検出素子に隣接する概ね直方体形状の軟磁性体と、を有している。軟磁性体の第１の方向の長さをＷ、第２の方向の長さをＬとしたときに、Ｌ／Ｗは１０以上、４０以下である。 According to one aspect of the present invention, a magnetic sensor is disposed on a surface including a first direction and a second direction orthogonal to the first direction, and detects a magnetic field in the first direction. And a soft magnetic body having a substantially rectangular parallelepiped shape adjacent to the first magnetic field detection element in the first direction. When the length in the first direction of the soft magnetic material is W and the length in the second direction is L, L / W is 10 or more and 40 or less .
Claims (8)
前記第１の方向において前記第１の磁界検出素子に隣接する軟磁性体と、を有し、
前記軟磁性体の前記第１の方向の長さをＷ、前記第２の方向の長さをＬとしたときに、Ｌ／Ｗは１０以上である、磁気センサ。 A first magnetic field detecting element that is disposed on a surface including a first direction and a second direction orthogonal to the first direction and detects a magnetic field in the first direction;
A soft magnetic material adjacent to the first magnetic field detection element in the first direction,
A magnetic sensor in which L / W is 10 or more, where W is a length in the first direction of the soft magnetic material and L is a length in the second direction.
前記第１の方向において前記第１の磁界検出素子に隣接する軟磁性体と、を有し、
前記軟磁性体の前記第１の方向の長さをＷ、前記第１の方向及び前記第２の方向と直交する第３の方向の長さをｈとしたときに、０．２７≦ｈ／Ｗ≦３である、磁気センサ。 A first magnetic field detecting element that is disposed on a surface including a first direction and a second direction orthogonal to the first direction and detects a magnetic field in the first direction;
A soft magnetic material adjacent to the first magnetic field detection element in the first direction,
When the length in the first direction of the soft magnetic material is W and the length in the third direction orthogonal to the first direction and the second direction is h, 0.27 ≦ h / A magnetic sensor with W ≦ 3.
前記第１の磁界検出素子と前記第２の磁界検出素子はそれぞれ、前記第１の方向の磁界を検出する感磁膜と、前記第１の方向及び前記第２の方向と直交する第３の方向に前記感磁膜を挟むリード対と、を有し、
前記第３の方向からみて、前記軟磁性体は、前記第１の方向に関し前記第１の磁界検出素子の前記リード対と前記第２の磁界検出素子の前記リード対との間にあり、且つ、前記第１の磁界検出素子の前記リード対と前記第２の磁界検出素子の前記リード対のいずれとも重なっていない、請求項１から７のいずれか１項に記載の磁気センサ。 A second magnetic field detecting element that is disposed on a surface including the first direction and the second direction and detects a magnetic field in the first direction;
Each of the first magnetic field detection element and the second magnetic field detection element includes a magnetosensitive film that detects a magnetic field in the first direction, and a third direction orthogonal to the first direction and the second direction. A lead pair sandwiching the magnetosensitive film in the direction,
Viewed from the third direction, the soft magnetic body is between the lead pair of the first magnetic field detection element and the lead pair of the second magnetic field detection element with respect to the first direction, and The magnetic sensor according to any one of claims 1 to 7, wherein the lead pair of the first magnetic field detection element and the lead pair of the second magnetic field detection element do not overlap with each other.
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| US16/053,936 US10768246B2 (en) | 2017-09-21 | 2018-08-03 | Magnetic sensor with elongated soft magnetic body |
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| CN201811107870.3A CN109541503B (en) | 2017-09-21 | 2018-09-21 | Magnetic sensor |
| US16/936,866 US11346900B2 (en) | 2017-09-21 | 2020-07-23 | Magnetic sensor with elongated soft magnetic body |
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