JP5341865B2 - Magnetic sensor - Google Patents

Description

  The present invention relates to a magnetic sensor excellent in external magnetic field resistance.

  The following patent document discloses a geomagnetic azimuth sensor that converts geomagnetism into a large magnetic flux density by focusing with a ferromagnetic core and detects this with an MR element arranged in a gap between the cores.

  However, a strong magnetic field is supplied from the core toward the MR element due to an external action, and this magnetic field preferentially acts on the hard bias layers connected to both ends of the MR element in the direction opposite to the magnetization direction. Then, there was a problem that the magnetization of the hard bias layer collapsed, and output fluctuation (midpoint potential fluctuation) occurred before and after application of the magnetic field.

JP 7-325138 A JP-A-9-105630 JP-A-7-324933 JP-A-7-324934

  Therefore, the present invention is to solve the above-described conventional problems, and an object thereof is to provide a magnetic sensor having improved external magnetic field resistance.

The magnetic sensor in the present invention is
A first element portion exhibiting a magnetoresistive effect formed by laminating a magnetic layer and a nonmagnetic layer;
A first bias layer and a second bias layer disposed on both sides in the first horizontal direction of the first element unit for supplying a first bias magnetic field to the first element unit;
A first soft magnetic body facing the first bias layer in the height direction and not contacting the first element portion, and a first soft magnetic body facing the first bias portion and facing the first element portion in the height direction and not contacting the first element portion. 2 soft magnetic materials,
The first bias layer and the second bias layer are magnetized in a second horizontal direction orthogonal to the first horizontal direction, and the first element portion is The first bias layer and the second bias layer are shifted in the second horizontal direction so that the first bias magnetic field is supplied;
The first soft magnetic body is located in the center of the second horizontal direction of the first bias layer in plan view, and the second soft magnetic body is in the second bias layer in plan view. The first soft magnetic body and the second soft magnetic body are located at the center in the second horizontal direction, and the external magnetic field from the first horizontal direction is converted into the first soft magnetic body and the second soft magnetic body. Between the first element portion and the second horizontal direction so as to be shifted in the second horizontal direction so that the first element portion is shifted in the first horizontal direction. And
In the second horizontal direction, the first soft magnetic body, the second soft magnetic body and the third soft magnetic body are arranged in this order,
The third soft magnetic body is provided at the same position in the second horizontal direction as the first soft magnetic body, and is shifted from the second soft magnetic body in the first horizontal direction,
End surfaces of the first soft magnetic body and the third soft magnetic body on the side close to the second soft magnetic body are aligned with the second horizontal direction,
The second horizontal gap T1 between the first soft magnetic body and the second soft magnetic body, and the second horizontal gap between the second soft magnetic body and the third soft magnetic body. The interval T2 is the same size.

  Thereby, it can suppress that the magnetic field of a reverse direction is applied to each bias layer, and can improve external magnetic field tolerance.

  In the present invention, the first soft magnetic body, the third soft magnetic body, and the second soft magnetic body are shifted in the first horizontal direction so as not to face each other in the second horizontal direction. Preferably it is.

  In the present invention, a plurality of the first element portions are arranged at intervals in the second horizontal direction, and one of the two first element portions adjacent in the second horizontal direction is The second bias layer connected to the first element part and the first bias layer connected to the other first element part are electrically connected by an electrical wiring layer, and The third soft magnetic body for the first element portion is preferably used as the first soft magnetic body for the other first element portion. Thereby, each soft magnetic body can be arrange | positioned efficiently and size reduction of a magnetic sensor can be accelerated | stimulated.

According to the present invention, a second element portion that exhibits a magnetoresistive effect formed by laminating a magnetic layer and a nonmagnetic layer, and disposed on both sides in the first horizontal direction of the second element portion, the second element A third bias layer and a fourth bias layer for supplying a second bias magnetic field to the portion;
The first soft magnetic body and the second soft magnetic body, which are disposed on both sides of the second element portion in the second horizontal direction and are shifted in the first horizontal direction, and the third soft magnetic body, , And
The magnetization directions of the third bias layer and the fourth bias layer are the same as those of the first bias layer and the second bias layer, and the second bias magnetic field is from a direction opposite to the first bias magnetic field. The third bias layer and the fourth bias layer are arranged shifted in the second horizontal direction so as to be supplied to the second element portion;
The arrangement of the first soft magnetic body, the second soft magnetic body, and the third soft magnetic body as viewed from the second element portion is such that the first soft magnetic body and the second soft magnetic body as viewed from the first element portion. It is the same as the arrangement of the magnetic body and the third soft magnetic body,
A plurality of the second element portions are arranged at intervals in the second horizontal direction, and one of the two second element portions adjacent in the second horizontal direction is the second element portion. The fourth bias layer connected to the second bias electrode and the third bias layer connected to the second second element portion are electrically connected by the electric wiring layer, and one second element portion The third soft magnetic body is used as the first soft magnetic body for the other second element portion,
A plurality of first element portions connected by the first bias layer, the second bias layer, and the electric wiring layer; and a plurality of second element portions connected to the third bias layer. A second element connecting body connected by the fourth bias layer and the electric wiring layer, and arranged at an interval in the second horizontal direction, and the first element connecting body and the second element It is preferable that the connecting body is integrated by being electrically connected by the intermediate connection portion. Thereby, the linearity of the output characteristics can be improved appropriately.

  In the present invention, the first element connecting body and the second element connecting body are integrated, and the element connecting body extending in the second horizontal direction is spaced apart in the first horizontal direction. A plurality of elements are arranged, and each element continuous body is connected to form a meander shape. Between each element continuous body, each soft magnetic body is also used by the adjacent element continuous body. It is preferable. Thereby, the space | interval to the 1st horizontal direction of each element continuous body is narrowed, and size reduction of a magnetic sensor can be achieved efficiently.

  In the present invention, it is preferable that end faces of portions of the bias layers connected to the element portions are formed obliquely with respect to the first horizontal direction and the second horizontal direction. As a result, the first bias magnetic field supplied to the first element unit and the second bias magnetic field supplied to the second element unit can be guided in the first horizontal direction appropriately and easily, and high-accuracy output characteristics can be obtained. be able to.

In the present invention, the first magnetoresistance effect element formed by continuously provided a plurality of the respective element units, the second magnetoresistance effect element, a third magnetoresistive element and the fourth magnetoresistive element are provided, each magnetoresistive A bridge circuit is composed of effect elements ,
The first magnetoresistive effect element and the third magnetoresistive effect element are connected to an input terminal, the second magnetoresistive effect element and the fourth magnetoresistive effect element are connected to a ground terminal, and the first magnetic resistance effect element is connected to a ground terminal. A first output terminal is connected between the resistance effect element and the second magnetoresistance effect element, and a second output terminal is connected between the third magnetoresistance effect element and the fourth magnetoresistance effect element. And
Each bias layer provided in each magnetoresistive effect element is magnetized in the same direction,
The external magnetic field converted from the first horizontal direction to the substantially second horizontal direction by each soft magnetic material is the same with respect to the sensitivity axis directions of the first magnetoresistive effect element and the fourth magnetoresistive effect element, respectively. And the sensitivity axes of the second magnetoresistive effect element and the third magnetoresistive effect element are respectively sensitive axes of the first magnetoresistive effect element and the fourth magnetoresistive effect element. It can be configured to flow from the opposite direction to the inflow direction with respect to the direction.

  According to the magnetic sensor of the present invention, the external magnetic field resistance can be improved.

Schematic (plan view) of the magnetic sensor in the present embodiment, Circuit diagram of magnetic sensor, The partial enlarged plan view which shows a part of 1st magnetoresistive effect element and 4th magnetoresistive effect element in this embodiment, FIG. 3 is a partially enlarged plan view showing a part of FIG. 3 further enlarged; The partial expanded plan view which expands and shows a part of 2nd magnetoresistive effect element and 3rd magnetoresistive effect element in this embodiment, Partial enlarged longitudinal sectional view of the element section cut in the height direction, The partial expanded longitudinal cross-sectional view cut | disconnected in the height direction along the AA line shown in FIG. Partial enlarged plan view showing a part of the magnetoresistive effect element of the comparative example, The graph which shows the relationship between the applied magnetic field with respect to the external magnetic field from the X1-X2 direction of the magnetic sensor of a present Example, and the magnetic sensor of a comparative example, and an output fluctuation amount, The graph which shows the relationship between the applied magnetic field with respect to the disturbance magnetic field from the Y1-Y2 direction of the magnetic sensor of a present Example, and the magnetic sensor of a comparative example, and an output fluctuation amount.

  1 is a schematic diagram (plan view) of a magnetic sensor according to the present embodiment, FIG. 2 is a circuit diagram of the magnetic sensor, and FIG. 3 is a partially enlarged plan view showing a part of the first and fourth magnetoresistive elements. 4 is a partially enlarged plan view showing a part of FIG. 3 further enlarged, FIG. 5 is a partially enlarged plan view showing a part of the second and third magnetoresistive elements, and FIG. FIG. 7 is a partially enlarged longitudinal sectional view taken along the line AA shown in FIG. 3, and FIG. 8 is a magnetoresistive of a comparative example. It is the elements on larger scale which show a part of effect element.

  The magnetic sensor S provided with the magnetoresistive effect element in the present embodiment is configured as a geomagnetic sensor mounted on a mobile device such as a mobile phone.

  The X1-X2 direction and the Y1-Y2 direction shown in each figure indicate two directions orthogonal to each other in the horizontal plane, and the Z direction indicates a direction orthogonal to the horizontal plane. One of the X1-X2 direction and Y1-Y2 is the “first horizontal direction”, and the other is the “second horizontal direction”.

  As shown in FIGS. 1 and 2, the magnetic sensor S includes a first magnetoresistance effect element 1, a second magnetoresistance effect element 2, a third magnetoresistance effect element 3, and a fourth magnetoresistance effect element 4. Composed. As will be described later, each of the magnetoresistive effect elements 1 to 4 is formed in a meander shape by connecting an element portion, a hard bias layer, an electric wiring layer, etc. In FIG. The shape is omitted for illustration.

  As shown in FIGS. 1 and 2, the first magnetoresistance effect element 1 and the third magnetoresistance effect element 3 are connected to an input terminal (Vdd) 5. The second magnetoresistive element 2 and the fourth magnetoresistive element 4 are connected to a ground terminal (GND) 6. A first output terminal (V 1) 7 is connected between the first magnetoresistive element 1 and the second magnetoresistive element 2. A second output terminal (V2) 8 is connected between the third magnetoresistive element 3 and the fourth magnetoresistive element 4.

  As shown in FIGS. 3 and 7, the first magnetoresistive element 1 is connected to a plurality of first element portions 9 arranged at intervals in the Y1-Y2 direction and to the X1 side of each first element portion 9. The first bias layer 10 (shown by a dotted line in FIG. 3) and the second bias layer 11 (shown by a dotted line in FIG. 3) connected to the X2 side of each first element unit 9 are included. In FIG. 3, only a part of the first element unit 9, the first bias layer 10, and the second bias layer 11 are denoted by reference numerals.

  As shown in FIG. 7, the first element unit 9 and the bias layers 10 and 11 are formed on the insulating base layer 16 on the surface of the substrate 15. As shown in FIG. 7, an insulating layer 17 is formed on the first element portion 9 and the bias layers 10 and 11, and each soft magnetic body 12 described later is formed on the planarized insulating layer 17. ing.

  The laminated structure of the first element unit 9 will be described with reference to FIG. FIG. 6 shows a cut surface cut parallel to the Y1-Y2 direction.

  As shown in FIG. 6, the first element unit 9 is formed by laminating, for example, a nonmagnetic underlayer 60, a pinned magnetic layer 61, a nonmagnetic layer 62, a free magnetic layer 63, and a protective layer 64 in this order from the bottom. . Each layer constituting the first element unit 9 is formed by sputtering, for example.

  In the embodiment shown in FIG. 6, the pinned magnetic layer 61 is a laminated ferrimagnetic layer composed of a first magnetic layer 61a, a second magnetic layer 61b, and a nonmagnetic intermediate layer 61c interposed between the first magnetic layer 61a and the second magnetic layer 61b. Structure. Each of the magnetic layers 61a and 61b is formed of a soft magnetic material such as a CoFe alloy (cobalt-iron alloy). The nonmagnetic intermediate layer 61c is made of Ru or the like. The nonmagnetic layer 62 is formed of a nonmagnetic material such as Cu (copper). The free magnetic layer 63 is made of a soft magnetic material such as a NiFe alloy (nickel-iron alloy). The protective layer 64 is Ta (tantalum) or the like.

  In the present embodiment, the pinned magnetic layer 61 has a laminated ferrimagnetic structure, and the first magnetic layer 61a and the second magnetic layer 61b have a self-pinned structure in which the magnetization is fixed antiparallel. However, the antiferromagnetic layer is formed in contact with the pinned magnetic layer, and an exchange coupling magnetic field Hex is generated between the antiferromagnetic layer and the pinned magnetic layer by heat treatment in a magnetic field, thereby magnetizing the pinned magnetic layer in a predetermined direction. It may be a fixed structure. For example, in the self-pinned structure shown in FIG. 6, the magnetic layers 61a and 61c constituting the pinned magnetic layer 61 are fixed by magnetization without using an antiferromagnetic layer, and thus without performing heat treatment in a magnetic field. The magnetization fixing force of each of the magnetic layers 61a and 61b only needs to be large enough to prevent magnetization fluctuation even when an external magnetic field is applied.

  In this embodiment, the fixed magnetization direction (P1; sensitivity axis direction) of the second magnetic layer 61b is the Y2 direction. This fixed magnetization direction (P 1) is the fixed magnetization direction of the fixed magnetic layer 61.

  As shown in FIGS. 3 and 4, the first bias layer 10 and the second bias layer 11 are formed in a shape longer in the Y1-Y2 direction than in the X1-X2 direction. Each bias layer (permanent magnet layer) 10 and 11 is formed of CoPt, CoPtCr, or the like.

  As shown in FIGS. 3 and 4, each first element portion 9 is formed in a rectangular shape that is long in the X1-X2 direction, for example. On the other hand, the first bias layer 10 and the second bias layer 11 are not rectangular, and the end faces 10a and 11a at the portion connected to the first element portion 9 are oblique to the X1-X2 direction and the Y1-Y2 direction. Is formed.

  As shown in FIGS. 3 and 7, the first bias layer 10 is opposed to the first bias layer 10 in the height direction (Z direction) and is not in contact with the first element portion 9, and the second bias layer 11. And a second soft magnetic body 12b that is in contact with the first element portion 9 and is in contact with the first element portion 9 in the height direction (Z direction). Here, FIG. 4A is a diagram in which the first element portions 9A and 9B, the bias layers 10 and 11 and the soft magnetic bodies 12 shown by hatching in FIG. 3 are extracted. The first and fourth magnetoresistive elements in this embodiment are configured by combining a number of configurations shown in FIG. 4B is exactly the same as FIG. 4A, but is used to explain the characteristic part of the present embodiment in comparison with the comparative example described later. The code shown in 4 (a) is removed.

  As shown in FIG. 4A, each of the soft magnetic bodies 12a to 12c is formed in a rectangular shape that is longer in the X1-X2 direction than in the Y1-Y2 direction. The soft magnetic bodies 12a to 12b are formed of NiFe, CoFe, CoFeSiB, CoZrNb, or the like.

  As shown in FIG. 4A, both the first bias layer 10 and the second bias layer 11 are magnetized in the Y1 direction (HB direction). As shown in FIG. 4, the first bias layer 10 and the second bias layer 11 are arranged so as to be shifted in the Y1-Y2 direction, and the end face 10a inclined on the Y2 side of the first bias layer 10 has the first bias layer 10. An end face 11a that is connected on the X1 side of the element portion 9A and is inclined on the Y1 side of the second bias layer 11 is connected on the X2 side of the first element portion 9A.

  For this reason, the first bias magnetic field B1 in the X1 direction is supplied to the first element portion 9A located between the second bias layer 11 and the first bias layer 10. The magnetization direction of the free magnetic layer 63 shown in FIG. 6 is aligned with the X1 direction by the first bias magnetic field B1.

  4A, the first soft magnetic body 12a is located at the center of the first bias layer 10 in the Y1-Y2 direction. Further, as shown in a plan view of FIG. 4, the second soft magnetic body 12 b is located at the center of the second bias layer 11 in the Y1-Y2 direction. As shown in FIG. 4, the first soft magnetic body 12a and the second soft magnetic body 12b are arranged so as to be shifted in the X1-X2 direction on both sides of the first element portion 9A in the Y1-Y2 direction. The first soft magnetic body 12a is disposed on the X1 side with respect to the first element portion 9A, and the second soft magnetic body 12b is disposed on the X2 side with respect to the first element portion 9A.

  As a result, the external magnetic field H1 from the X1-X2 direction flows into the first soft magnetic body 12a, exits from the X2 side end portion 12d of the first soft magnetic body 12a, and ends on the X1 side of the second soft magnetic body 12b. When entering the part 12e, it is converted into an external magnetic field H2 (hereinafter referred to as a converted magnetic field H2) in a substantially Y1-Y2 direction and supplied to the first element part 9A (see FIGS. 4A and 7).

  When the first element unit 9A receives the conversion magnetic field H2, the magnetization direction of the free magnetic layer 63 (see FIG. 6) oriented in the X1 direction is inclined toward the Y2 direction, and at this time, the first element unit 9A is fixed. Since the magnetization direction (P1) is the Y2 direction, the electric resistance value of the first element portion 9A gradually decreases due to the magnetoresistive effect.

  In the present embodiment, the first soft magnetic body 12a, the second soft magnetic body 12b, and the third soft magnetic body 12c are arranged in this order from the Y1 side to the Y2 side. It is provided at the same position as the first soft magnetic body 12a in the -Y2 direction. As shown in FIG. 4A, the X2-side end face 12a1 of the first soft magnetic body 12a and the X2-side end face 12c1 of the third soft magnetic body 12c are on a straight line CC parallel to the Y1-Y2 direction. It matches.

  Further, as shown in FIG. 4A, the distance T1 between the first soft magnetic body 12a and the second soft magnetic body 12b in the Y1-Y2 direction, the second soft magnetic body 12b, and the third soft magnetic body 12c. And the interval T2 in the Y1-Y2 direction between them is the same.

  In the present embodiment, by arranging the first element portion 9A, the bias layers 10 and 11, and the soft magnetic bodies 12a to 12c as described above, the external magnetic field H1 from the X1 direction is as shown in FIG. While changing the direction as indicated by the arrows (1) to (5), the first soft magnetic body 12a and the third soft magnetic body 12c pass through the second soft magnetic body 12b. At this time, an external magnetic field (3) directed substantially in the Y2 direction is generated between the first soft magnetic body 12a and the second soft magnetic body 12b. A part of this is a converted magnetic field H2 for flowing into the first element portion 9A described with reference to FIG.

  The direction of the external magnetic field (3) is substantially opposite to the magnetization direction (HB direction) of the first bias layer 10 and the second bias layer 11. Therefore, the external magnetic field (3) will be referred to as the magnetization direction reverse magnetic field (3).

  On the other hand, an external magnetic field (4) oriented substantially in the Y1 direction is generated between the third soft magnetic body 12c and the second soft magnetic body 12b. The external magnetic field (4) is generated by the first bias layer 10 and the second soft magnetic body 12b. It is substantially the same direction as the magnetization direction (HB direction) of the two bias layers 11, and therefore the external magnetic field (4) is referred to as the magnetization direction same magnetic field (4).

  As shown in FIG. 4B, since the second bias layer 11 exists in the place where the magnetization direction reverse magnetic field (3) and the magnetization direction same magnetic field (4) are generated, the magnetization direction reverse magnetic field ( 3) and the same magnetic field (4) in the magnetization direction both affect the second bias layer 11.

  Here, when the external magnetic field H1 is a strong magnetic field of, for example, about 500 to 2000 Oe (about 40 to 160 kA / m), the configuration of the present embodiment is in terms of the external magnetic field resistance in comparison with the comparative example shown in FIG. Explain that it is excellent.

  FIG. 8 is a partial plan view of a magnetic sensor showing a comparative example. Here, reference numeral 20 denotes an element part, which corresponds to the first element part 9A in FIG. 4B, reference numeral 21 denotes a first bias layer, and corresponds to the first bias layer 10 in FIG. Reference numeral 22 denotes a second bias layer, which corresponds to the second bias layer 11 in FIG. 4B, and reference numeral 23 denotes a first soft magnetic body, which corresponds to the first soft magnetic body 12a in FIG. 4B. Reference numeral 24 denotes a third soft magnetic body, which corresponds to the third soft magnetic body 12c in FIG. 4B, and reference numeral 25 denotes a second soft magnetic body, and the second soft magnetic body in FIG. 4B. It corresponds to the body 12b.

  In FIG. 8, as in the present embodiment of FIG. 4, the magnetization direction (HB direction) of the bias layers 21 and 22 is the Y1 direction.

  In FIG. 8, paying attention to a certain first element portion 20, the soft magnetic bodies arranged around the first element portion 20 are "first soft magnetic body", "second soft magnetic body", " It was named “third soft magnetic material”.

  Here, in the comparative example of FIG. 8, the interval T3 between the first soft magnetic body 23 and the second soft magnetic body 25 in the Y1-Y2 direction, and the Y1 between the second soft magnetic body 25 and the third soft magnetic body 24. The size of the interval T4 in the −Y2 direction is slightly different (about 0.5 to 3 μm), and the first soft magnetic body 23 and the second soft magnetic body 25 are the first bias layer 21 and the second bias layer, respectively. 22, the X2-side end faces 23b and 24b of the first soft magnetic body 23 and the third soft magnetic body 24 are not aligned in the Y1-Y2 direction. The comparative example is different from the present embodiment of FIG.

  In the comparative example, by arranging the first element unit 20, the bias layers 21, 22 and the soft magnetic bodies 23 to 25 as described above, the external magnetic field H1 from the X1 direction is changed from (6) to (6) in FIG. It passes between the soft magnetic bodies while changing the direction as indicated by the arrow in (11). At this time, between the first soft magnetic body 23 and the second soft magnetic body 25, a magnetization direction reverse magnetic field (8) directed substantially in the Y2 direction is generated.

  Further, between the third soft magnetic body 24 and the second soft magnetic body 25, the same magnetic field (9) in the magnetization direction that is substantially in the Y1 direction is generated. However, between the third soft magnetic body 24 and another soft magnetic body 26 different from the second soft magnetic body 25 (a soft magnetic body located on the side of the diagonal Y2 in the X2 direction when viewed from the third soft magnetic body 24). The external magnetic field (10) generated in the above is just a reverse magnetic field in the magnetization direction that affects the second bias layer 22.

  That is, in the comparative example of FIG. 8, one magnetization direction same magnetic field (9) and two magnetization direction opposite magnetic fields (8) (10) act on the second bias layer 22.

  Here, there is no particular problem if the external magnetic field H1 is weak, but as shown in the experimental results of FIG. 9, a strong magnetic field of about 500 to 2000 Oe (about 40 to 160 kA / m) depending on the environment used as a geomagnetic sensor. Is applied, the magnetization direction same magnetic field (9) and the magnetization direction reverse magnetic field (8) (10) applied to the second bias layer 22 are unequal, so that the magnetization state of the second bias layer 22 is As a result, the output (midpoint potential difference; output difference between the first output terminal (V1) 7 and the second output terminal (V2) 8 shown in FIG. 2) fluctuates after the external magnetic field H1 is removed. was there.

  On the other hand, in the present embodiment shown in FIGS. 4A and 4B, the first soft magnetic body 12a and the second soft magnetic body 12b are respectively in the center of the bias layers 10 and 11 in the Y1-Y2 direction. The X1 side end faces 12a1 and 12c1 of the first soft magnetic body 12a and the third soft magnetic body 12c coincide with each other on a straight line CC parallel to the Y1-Y2 direction, and further, the first soft magnetic body 12a The distance T1 between the second soft magnetic body 12b and the distance T2 between the second soft magnetic body 12b and the third soft magnetic body 12c are the same size.

  For this reason, in this embodiment, the magnetization direction reverse magnetic field (3) and the magnetization direction same magnetic field (4) of substantially equal magnitude enter the second bias layer 11, and these magnetic fields are canceled out. The magnetic field applied to the second bias layer 11 in the direction opposite to the magnetization can be reduced as compared with the configuration of the comparative example shown in FIG.

  Therefore, in this embodiment, even if a strong external magnetic field H1 acts from the X1-X2 direction, as shown in FIG. 9, the output after the removal of the external magnetic field H1 (midpoint potential difference; first output terminal shown in FIG. The fluctuation amount of (V1) 7 and the output difference between the second output terminal (V2) 8) can be suppressed as compared with the comparative example, and the magnetic sensor S having excellent external magnetic field resistance can be obtained.

  As shown in FIGS. 4A and 4B, the first soft magnetic body 12a, the third soft magnetic body 12c, and the second soft magnetic body 12b are arranged so as not to face each other in the Y1-Y2 direction. The shift in the X2 direction is preferable because the converted magnetic field H2 in the substantially Y1-Y2 direction can be appropriately supplied to the first element unit 9A. Moreover, the disturbance magnetic field tolerance from Y1-Y2 direction can also be strengthened.

  As shown in FIG. 3, the plurality of first element portions 9 are arranged at intervals in the Y1-Y2 direction. The first bias layer 10 and the second bias layer 11 are connected to both sides of each first element unit 9 in the X1-X2 direction, respectively. The second bias layer 11 connected to one of the first element portions 9 adjacent in the Y1-Y2 direction and the first bias layer 10 connected to the other first element portion 9 are the electrical wiring layer 30. (Shown by a one-dot chain line).

  As shown in FIG. 4 (a), the third soft magnetic body 12c for the first element portion 9A has a first soft portion for the first element portion 9B that is spaced from the first element portion 9A in the Y1-Y2 direction. It is used as the magnetic body 12a.

  As shown in FIG. 3, the first soft magnetic body 12a and the third soft magnetic body 12c with respect to each first element portion 9 are in the X1-X2 direction when viewed from each first element portion 9 and on the oblique Y1 side or Used as a second soft magnetic body for the first element portion 9 arranged on the Y2 side.

  Thus, each soft magnetic body 12 for each first element portion 9 is also used as a soft magnetic body 12 for other first element portions 9 arranged obliquely in the Y1-Y2 direction or the X1-X2 direction, Thereby, size reduction of the magnetic sensor S is realizable.

  As shown in FIG. 3, the 1st element part 9 which arrange | positions the 1st element part 9 at intervals in the Y1-Y2 direction, and has connected each 1st element part 9 in the X1-X2 direction. Multiple lines are arranged at intervals.

  As shown in FIG. 3, the present embodiment further includes a second element unit 32, and a third bias layer 33 and a fourth bias layer 34 disposed on both sides of the second element unit 32 in the X1-X2 direction. The second element portion 32 is formed with the same stacked structure as the first element portion 9 shown in FIG.

  As shown in FIG. 3, the third bias layer 33 is connected to the X2 side of the second element portion 32, and the fourth bias layer 34 is connected to the X1 side of the second element portion 32. The third bias layer 33 has the same shape as the second bias layer 11, and the fourth bias layer 34 has the same shape as the first bias layer 10, but the third bias layer 33 is in the Y1 direction with respect to the second element unit 32. The fourth bias layer 34 extends in the Y2 direction with respect to the second element portion 32. The magnetization direction (HB direction) of the third bias layer 33 and the fourth bias layer 34 is also in the Y1 direction like the first bias layer 10 and the second bias layer 11, but the third bias layer 33 and the fourth bias layer are also in the Y1 direction. Since the shifting direction of the layer 34 in the Y1-Y2 direction is opposite to that of the first bias layer 10 and the second bias layer 11, the second bias magnetic field B2 in the X2 direction is supplied to the second element unit 32.

  As shown in FIG. 3, the arrangement of the soft magnetic bodies 12 with respect to the second element portion 32 is the same as the arrangement of the soft magnetic bodies 12 (12 a to 12 c) with respect to the first element portion 9.

  As shown in FIG. 3, a plurality of second element portions 32 are arranged at intervals in the Y1-Y2 direction, the fourth bias layer 34 connected to one second element portion 32, and the other second element portion 32. A plurality of second element connection bodies 36, which are formed by connecting the third bias layer 33 connected to the two element portions 32 by the electric wiring layer 30 so as to be connected, are arranged at intervals in the X1-X2 direction. ing.

  Each first element connecting body 31 and each second element connecting body 36 are electrically connected and integrated by an intermediate connection portion 37 (shown by a one-dot chain line) made of a conductive material.

  As a result, the first element connecting body 31 and the second element connecting body 36 are integrated, and a plurality of element connecting bodies 38 extending in the Y1-Y2 direction are arranged at intervals in the X1-X2 direction. Each element connecting body 38 is electrically connected by a connecting portion 46 made of a conductive material and has a meander shape. As shown in FIG. 3, the soft magnetic bodies 12 are also used by the adjacent element connecting bodies 38 between the element connecting bodies 38.

  In the embodiment of FIG. 3, the pinned magnetic layers 61 of the first element unit 9 and the second element unit 32 have the same fixed magnetization direction (P1), but the directions of the bias magnetic fields B1 and B2 are opposite to each other. The magnetization direction of the free magnetic layer 63 of the element unit 9 is opposite to the magnetization direction of the free magnetic layer 63 of the second element unit 32. Therefore, when the sensitivity of each of the element units 9 and 32 is changed by the action of the external magnetic field, the sensitivity shift direction of the first element unit 9 and the sensitivity shift direction of the second element unit 32 are opposite to each other. Variations in sensitivity as a whole magnetoresistive effect element having the first element portion 9 and the second element portion 32 can be reduced. For this reason, in this embodiment, the linearity of output characteristics can be improved.

  On the other hand, the 2nd magnetoresistive effect element 2 and the 3rd magnetoresistive effect element 3 are opposite to the increase / decrease tendency of the electrical resistance value of the 1st magnetoresistive effect element 1 and the 4th magnetoresistive effect element 4 by the effect | action of an external magnetic field. Configured to show.

  For example, the arrangement of each element part, each bias layer, and each soft magnetic material may be the same as in FIG. 3, and the fixed magnetization direction (P1) of the fixed magnetic layer 61 of each element part may be reversed. In particular, the stacked structure shown in FIG. 6 is a self-pinned structure and does not require heat treatment, and therefore, an element having the fixed magnetization direction (P1) of the fixed magnetic layer 61 in the opposite direction is appropriately formed on the same substrate 15. It is possible.

  In such a configuration, all the bias layers provided in the first magnetoresistive element 1 to the fourth magnetoresistive element 4 can be magnetized in the same direction.

  Alternatively, as shown in FIG. 5, the fixed magnetization direction (P1) of the fixed magnetic layer 61 of the element unit 40 constituting the second magnetoresistive effect element 2 and the third magnetoresistive effect element 3 is the first magnetoresistive effect element. The arrangement of the bias layers 41 and 42 and the soft magnetic bodies 43 to 45 may be changed in the same Y2 direction as the first and fourth magnetoresistance effect elements 4.

  In FIG. 5, when the external magnetic field H1 is applied in the X2 direction, the external magnetic field advances while changing the direction from the soft magnetic body 45 toward the soft magnetic body 44. It is converted into an external magnetic field (conversion magnetic field H3). In the element unit 40, the direction of the conversion magnetic field H3 is opposite to the fixed magnetization direction (P1) of the fixed magnetic layer 61. Therefore, the electric resistance values of the second magnetoresistive effect element 2 and the third magnetoresistive effect element 3 increase. . On the other hand, in the first magnetoresistive element 1 and the fourth magnetoresistive element 4, as shown in FIG. 4A, the direction of the conversion magnetic field H2 is the same as the fixed magnetization direction (P1) of the fixed magnetic layer 61. Therefore, the electrical resistance value becomes small.

  If the element unit 40 in FIG. 5 is the first element unit 9 in FIG. 3, the bias magnetic field supplied to the element unit is inverted by shifting the bias layers 41 and 42 in FIG. 5 in the reverse direction in the Y1-Y2 direction. The second element portion 32 of FIG. 3 can be configured. Then, the second magnetoresistance effect element 2 and the third magnetoresistance effect element 3 can be configured by forming each element portion in a meander shape as in FIG.

  Also in FIG. 5, the magnetization direction (HB direction) of the bias layers 41 and 42 is the Y1 direction, and the magnetization directions of the bias layers of all the magnetoresistive elements 1 to 4 can be made the same direction.

  In this way, all the bias layers are magnetized in the same direction, and the fixed magnetization direction (P1) of the fixed magnetic layer 61 of each element part is set to the same direction, so that the disturbance magnetic field H4 is generated from the Y1-Y2 direction, for example. Since the electric resistance change of all the magnetoresistive effect elements 1 to 4 becomes the same when entering, as shown in FIG. 9, the output change amount can be substantially zero over a wide range. Here, the magnitude of the magnetic field is such that the magnetization of the bias layer is not broken. Compared with the resistance against the external magnetic field H1 from the X1-X2 direction in FIG. 9, the disturbance magnetic field resistance in FIG. 10 is superior, and the comparative example in FIG. 8 also has a structure with excellent disturbance magnetic field resistance. It was found that the structure excellent in the external magnetic field resistance shown in FIG. 10 together with the external magnetic field resistance shown in FIG. 9 is the structure of this embodiment.

  1 to 7, the sensor structure for detecting the external magnetic field in the X1-X2 direction has been described. However, if the sensor structure is rotated by 90 degrees in the horizontal direction, the sensor structure for detecting the external magnetic field in the Y1-Y2 direction is obtained. Therefore, in the present embodiment, the sensor structure shown in FIGS. 1 to 7 and the sensor structure rotated by 90 degrees are provided, so that the magnetic sensor S capable of detecting the magnetic field in the X and Y directions can be obtained.

B1, B2 Bias magnetic field H1 External magnetic field H2, H3 Conversion magnetic field HB Magnetization direction P1 Fixed magnetization direction S Magnetic sensors 1 to 4 Magnetoresistive elements 9, 9A, 9B First element part 10 First bias layer 11 Second bias layer 12, 12a to 12c, 43 to 45 Soft magnetic body 30 Electric wiring layer 31 First element connection body 32 Second element portion 33 Third bias layer 34 Fourth bias layer 36 Second element connection body 38 Element connection body 61 Pinned magnetic layer 63 Free magnetic layer

Claims (7)

A first element portion exhibiting a magnetoresistive effect formed by laminating a magnetic layer and a nonmagnetic layer;
A first bias layer and a second bias layer disposed on both sides in the first horizontal direction of the first element unit for supplying a first bias magnetic field to the first element unit;
A first soft magnetic body facing the first bias layer in the height direction and not contacting the first element portion, and a first soft magnetic body facing the first bias portion and facing the first element portion in the height direction and not contacting the first element portion. 2 soft magnetic materials,
The first bias layer and the second bias layer are magnetized in a second horizontal direction orthogonal to the first horizontal direction, and the first element portion is The first bias layer and the second bias layer are shifted in the second horizontal direction so that the first bias magnetic field is supplied;
The first soft magnetic body is located in the center of the second horizontal direction of the first bias layer in plan view, and the second soft magnetic body is in the second bias layer in plan view. The first soft magnetic body and the second soft magnetic body are located at the center in the second horizontal direction, and the external magnetic field from the first horizontal direction is converted into the first soft magnetic body and the second soft magnetic body. Between the first element portion and the second horizontal direction so as to be shifted in the second horizontal direction so that the first element portion is shifted in the first horizontal direction. And
In the second horizontal direction, the first soft magnetic body, the second soft magnetic body and the third soft magnetic body are arranged in this order,
The third soft magnetic body is provided at the same position in the second horizontal direction as the first soft magnetic body, and is shifted from the second soft magnetic body in the first horizontal direction,
End surfaces of the first soft magnetic body and the third soft magnetic body on the side close to the second soft magnetic body are aligned with the second horizontal direction,
The second horizontal gap T1 between the first soft magnetic body and the second soft magnetic body, and the second horizontal gap between the second soft magnetic body and the third soft magnetic body. A magnetic sensor, wherein the interval T2 is the same size.   The first soft magnetic body, the third soft magnetic body, and the second soft magnetic body are arranged so as to be shifted in the first horizontal direction so as not to face each other in the second horizontal direction. The magnetic sensor described.   A plurality of the first element parts are arranged at intervals in the second horizontal direction, and one of the two first element parts adjacent in the second horizontal direction is the first element part. The second bias layer connected to the second bias layer and the first bias layer connected to the other first element portion are electrically connected by an electric wiring layer, and are connected to one of the first element portions. The magnetic sensor according to claim 1, wherein the third soft magnetic body is used as the first soft magnetic body with respect to the other first element portion. A second element portion that exhibits a magnetoresistive effect formed by laminating a magnetic layer and a nonmagnetic layer, and is disposed on both sides in the first horizontal direction of the second element portion, and a second bias is applied to the second element portion. A third bias layer and a fourth bias layer for supplying a magnetic field;
The first soft magnetic body and the second soft magnetic body, which are disposed on both sides of the second element portion in the second horizontal direction and are shifted in the first horizontal direction, and the third soft magnetic body, , And
The magnetization directions of the third bias layer and the fourth bias layer are the same as those of the first bias layer and the second bias layer, and the second bias magnetic field is from a direction opposite to the first bias magnetic field. The third bias layer and the fourth bias layer are arranged shifted in the second horizontal direction so as to be supplied to the second element portion;
The arrangement of the first soft magnetic body, the second soft magnetic body, and the third soft magnetic body as viewed from the second element portion is such that the first soft magnetic body and the second soft magnetic body as viewed from the first element portion. It is the same as the arrangement of the magnetic body and the third soft magnetic body,
A plurality of the second element portions are arranged at intervals in the second horizontal direction, and one of the two second element portions adjacent in the second horizontal direction is the second element portion. The fourth bias layer connected to the second bias electrode and the third bias layer connected to the second second element portion are electrically connected by the electric wiring layer, and one second element portion The third soft magnetic body is used as the first soft magnetic body for the other second element portion,
A plurality of first element portions connected by the first bias layer, the second bias layer, and the electric wiring layer; and a plurality of second element portions connected to the third bias layer. A second element connecting body connected by the fourth bias layer and the electric wiring layer, and arranged at an interval in the second horizontal direction, and the first element connecting body and the second element The magnetic sensor according to claim 3, wherein the connecting body is electrically connected to and integrated with the intermediate connection portion.   The first element connecting body and the second element connecting body are integrated, and a plurality of element connecting bodies extending in the second horizontal direction are arranged at intervals in the first horizontal direction. Each element continuous body is connected to form a meander shape, and between each element continuous body, each soft magnetic body is also used in the adjacent element continuous body. 4. The magnetic sensor according to 4.   6. The end face of a portion connected to each element portion of each bias layer is formed obliquely with respect to the first horizontal direction and the second horizontal direction. Magnetic sensor. A first magnetoresistive effect element , a second magnetoresistive effect element , a third magnetoresistive effect element, and a fourth magnetoresistive effect element formed by connecting a plurality of element portions are provided, and each magnetoresistive effect element provides a bridge circuit. Is configured,
The first magnetoresistive effect element and the third magnetoresistive effect element are connected to an input terminal, the second magnetoresistive effect element and the fourth magnetoresistive effect element are connected to a ground terminal, and the first magnetic resistance effect element is connected to a ground terminal. A first output terminal is connected between the resistance effect element and the second magnetoresistance effect element, and a second output terminal is connected between the third magnetoresistance effect element and the fourth magnetoresistance effect element. And
Each bias layer provided in each magnetoresistive effect element is magnetized in the same direction,
The external magnetic field converted from the first horizontal direction to the substantially second horizontal direction by each soft magnetic material is the same with respect to the sensitivity axis directions of the first magnetoresistive effect element and the fourth magnetoresistive effect element, respectively. And the sensitivity axes of the second magnetoresistive effect element and the third magnetoresistive effect element are respectively sensitive axes of the first magnetoresistive effect element and the fourth magnetoresistive effect element. The magnetic sensor according to claim 1, wherein the magnetic sensor flows in a direction opposite to the inflow direction with respect to the direction.

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