JP6725300B2 - Magnetic sensor and manufacturing method thereof - Google Patents
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Description
本発明は、磁気センサおよびその製造方法に関し、特に、垂直方向の磁界成分を水平方向に変換する軟磁性体を有する磁気センサおよびその磁気センサを製造する方法に関する。 The present invention relates to a magnetic sensor and a method of manufacturing the same, and more particularly, to a magnetic sensor having a soft magnetic material that converts a magnetic field component in the vertical direction to the horizontal direction and a method of manufacturing the magnetic sensor.
磁気抵抗効果素子を用いた磁気センサは、例えば携帯電話機やスマートフォン等のモバイル機器に組み込まれて、地磁気を検出するための地磁気センサとして用いることができる。地磁気センサは、水平面内において直交するＸ軸方向及びＹ軸方向と、水平面に直交する垂直方向（Ｚ軸方向）との磁界成分をそれぞれ検出することができるように構成されている。 A magnetic sensor using a magnetoresistive effect element can be incorporated in a mobile device such as a mobile phone or a smart phone and used as a geomagnetic sensor for detecting geomagnetism. The geomagnetic sensor is configured to be able to detect magnetic field components in the X-axis direction and the Y-axis direction that are orthogonal to each other in the horizontal plane, and in the vertical direction (Z-axis direction) that is orthogonal to the horizontal plane.
特許文献１には、垂直方向の磁界成分を水平方向の磁界成分に変換して、この磁界成分を検出することができる磁気センサについて記載されている。特許文献１に記載される磁気センサは垂直方向の磁界成分を水平方向の磁界成分に変換する軟磁性体を備え、軟磁性体の磁化方向が高さ方向（垂直方向）に向きやすくなるように、一例において軟磁性体のアスペクト比（高さ寸法／幅寸法）は１．５倍から４倍程度に設定される。このため、外部から強磁界が印加された場合に、軟磁性体の高さ方向に残留磁化が発生することがあった。この残留磁界の影響によりブリッジ回路の中点電位が変化し、磁気センサのオフセットずれが発生するという問題が生じうる。 Patent Document 1 describes a magnetic sensor capable of converting a vertical magnetic field component into a horizontal magnetic field component and detecting the magnetic field component. The magnetic sensor described in Patent Document 1 includes a soft magnetic body that converts a vertical magnetic field component into a horizontal magnetic field component so that the magnetization direction of the soft magnetic body can easily be oriented in the height direction (vertical direction). In one example, the aspect ratio (height dimension/width dimension) of the soft magnetic material is set to about 1.5 to 4 times. Therefore, when a strong magnetic field is applied from the outside, residual magnetization may occur in the height direction of the soft magnetic material. Due to the influence of this residual magnetic field, the midpoint potential of the bridge circuit may change, causing a problem that offset displacement of the magnetic sensor occurs.
本発明は、特許文献１に記載されるような磁界の特定の方向の成分を別の方向の成分に変換する機能を有する磁気センサであって、オフセットずれの問題が生じにくい構造を有する磁気センサを提供することを目的とする。また、本発明は、そのような構造上の改善が行われた磁気センサを製造する方法を提供することを目的とする。 The present invention is a magnetic sensor having a function of converting a component in a specific direction of a magnetic field into a component in another direction as described in Patent Document 1, and a magnetic sensor having a structure in which the problem of offset deviation does not easily occur. The purpose is to provide. It is also an object of the invention to provide a method of manufacturing a magnetic sensor with such structural improvements.
上記課題を解決するために提供される本発明は、一態様として、基板の一面である第１面に設けられ、前記第１面の面内方向の一つである第１方向に沿った感度軸を有する磁気抵抗効果素子と、非磁性材料からなり前記第１面から離れる向きに起立する起立面を有する非磁性体部と、前記起立面に設けられた軟磁性層とを備え、外部磁界が印加されたときに、前記軟磁性層を通過した磁界成分が前記磁気抵抗効果素子に印加されるように、前記磁気抵抗効果素子と前記軟磁性層とは非接触に配置されることを特徴とする磁気センサである。 As one aspect, the present invention provided to solve the above-mentioned problems is provided on a first surface which is one surface of a substrate, and has sensitivity along a first direction which is one of in-plane directions of the first surface. An external magnetic field is provided which includes a magnetoresistive effect element having an axis, a non-magnetic body portion made of a non-magnetic material and having a standing surface standing upright in a direction away from the first surface, and a soft magnetic layer provided on the standing surface. Is applied to the magnetoresistive effect element, the magnetoresistive effect element and the soft magnetic layer are arranged in a non-contact manner so that the magnetic field component passing through the soft magnetic layer is applied to the magnetoresistive effect element. Is a magnetic sensor.
本明細書において、ある部材の面に他の部材が設けられるとは、ある部材の面に直接的に接するように他の部材が位置する場合のみならず、ある部材の面と他の部材との間に別の部材（保護層、導体化処理により形成された層など）が介在する場合も含む。 In the present specification, the term "providing another member on the surface of a certain member" means not only the case where the other member is positioned so as to be in direct contact with the surface of the certain member but also the surface of the certain member and the other member. It also includes the case where another member (a protective layer, a layer formed by a conductor treatment, etc.) is interposed therebetween.
非磁性体の表面に形成された軟磁性層は、表面から内部に至る全体を軟磁性体で形成した磁気センサに比べて軟磁性体の体積が小さい。したがって、外部磁界の帯磁による残留磁化量は相対的に少なくなり、一瞬の外乱磁場印加によってブリッジ回路の中点電位が変化してオフセットずれが発生することを抑制できる。 The soft magnetic layer formed on the surface of the non-magnetic material has a smaller volume of the soft magnetic material than a magnetic sensor in which the entire surface from the surface to the inside is formed of the soft magnetic material. Therefore, the residual magnetization amount due to the magnetization of the external magnetic field is relatively small, and it is possible to suppress the offset deviation due to the change of the midpoint potential of the bridge circuit due to the instantaneous application of the disturbance magnetic field.
前記軟磁性層の前記第１面に対向する側から前記軟磁性層に連続して前記第１方向に延びて、前記磁気抵抗効果素子の第１面に対向する側とは反対側の面の上に、前記磁気抵抗効果素子とは非接触に配置される第１延出部をさらに備えていてもよい。このような構成を備えることにより、不所望な磁界成分が磁気抵抗効果素子に印加されることを防止できる。 From the side of the soft magnetic layer facing the first surface, extending in the first direction continuously to the soft magnetic layer, of the surface opposite to the side facing the first surface of the magnetoresistive effect element. In addition, a first extension portion may be further provided which is arranged in non-contact with the magnetoresistive effect element. With such a configuration, it is possible to prevent an undesired magnetic field component from being applied to the magnetoresistive effect element.
前記軟磁性層の前記第１面に対向する側とは反対側から前記軟磁性層に連続して前記第１方向に延びる第２延出部をさらに備えていてもよい。第２延出部においても第１面の法線方向の磁界成分を集磁することができ、磁気センサの検出感度を高めることが可能となる。 The soft magnetic layer may further include a second extending portion that is continuous with the soft magnetic layer and extends in the first direction from a side opposite to the side facing the first surface. The magnetic field component in the normal direction of the first surface can also be collected in the second extending portion, and the detection sensitivity of the magnetic sensor can be increased.
前記起立面は、互いに対向する第１の起立面および第２の起立面を有し、前記軟磁性層は、前記第１の起立面に設けられた第１の軟磁性層および第２の起立面に設けられた第２の軟磁性層を備え、前記磁気抵抗効果素子は、前記第１の軟磁性層から流出して方向変換された前記第１方向の磁界成分が印加されるように配置された第１の磁気抵抗効果素子と、前記第２の軟磁性層から流出して方向変換された前記第１方向の磁界成分が印加されるように配置された第２の磁気抵抗効果素子とを備えてもよい。 The upright surface has a first upright surface and a second upright surface facing each other, and the soft magnetic layer includes a first soft magnetic layer and a second upright surface provided on the first upright surface. A second soft magnetic layer provided on the surface, wherein the magnetoresistive effect element is arranged so that the magnetic field component in the first direction that has flowed out of the first soft magnetic layer and has its direction changed is applied. And a second magnetoresistive effect element arranged so that the magnetic field component in the first direction, which has flowed out of the second soft magnetic layer and changed in direction, is applied. May be provided.
上記の構成において、前記磁気抵抗効果素子（第１の磁気抵抗効果素子および第２の磁気抵抗効果素子）は、前記第１方向の一方に沿った向きに磁化が固定された固定磁性層と、外部磁界により磁化の向きが変化する自由磁性層とを有し、前記第１の磁気抵抗効果素子の前記固定磁性層の磁化の向きと、前記第２の磁気抵抗効果素子の前記固定磁性層の磁化の向きとは揃えられていてもよい。 In the above structure, the magnetoresistive effect element (the first magnetoresistive effect element and the second magnetoresistive effect element) includes a pinned magnetic layer whose magnetization is fixed in a direction along one of the first directions, A free magnetic layer whose magnetization direction is changed by an external magnetic field, and a magnetization direction of the pinned magnetic layer of the first magnetoresistance effect element and a magnetization direction of the pinned magnetic layer of the second magnetoresistance effect element. It may be aligned with the direction of magnetization.
このような構成を備える場合には、前記第１の磁気抵抗効果素子と前記第２の磁気抵抗効果素子とは直列に接続されてハーフブリッジ回路を構成することが容易となる。 With such a configuration, it becomes easy to configure the half-bridge circuit by connecting the first magnetoresistive effect element and the second magnetoresistive effect element in series.
前記磁気センサは、前記ハーフブリッジ回路を２つ備え、前記２つのハーフブリッジ回路はフルブリッジ回路を構成していてもよい。センサの検出精度をより安定的に高めることができる。 The magnetic sensor may include two half bridge circuits, and the two half bridge circuits may form a full bridge circuit. The detection accuracy of the sensor can be increased more stably.
この場合において、前記フルブリッジ回路に含まれる２つの前記第１の磁気抵抗効果素子および２つの前記第２の磁気抵抗効果素子は前記第１方向に並置されていてもよい。このような構成を備える磁気センサは製造が容易となる場合がある。 In this case, the two first magnetoresistive effect elements and the two second magnetoresistive effect elements included in the full bridge circuit may be juxtaposed in the first direction. The magnetic sensor having such a configuration may be easily manufactured.
前記第１の軟磁性層と前記第２の軟磁性層との離間距離は１０μｍ以上であることが、残留磁化に基づくセンサ感度の低下を生じにくくする観点から好ましい。 It is preferable that the separation distance between the first soft magnetic layer and the second soft magnetic layer is 10 μm or more, from the viewpoint that the sensor sensitivity is less likely to decrease due to residual magnetization.
前記起立面は導電性を有し、前記軟磁性層はめっき析出物を含むことが、製造容易性を高める観点から好ましい場合もある。 In some cases, it is preferable that the upright surface has conductivity and the soft magnetic layer contains a plating deposit, from the viewpoint of enhancing ease of production.
本発明は、他の一態様として、上記の軟磁性層がめっき析出物を含む構成を備える磁気センサの製造方法であって、前記第１面上に前記磁気抵抗効果素子を形成し、前記磁気抵抗効果素子を覆うように非磁性絶縁層を形成し、前記非磁性絶縁層上に、前記起立面が導電性を有する前記非磁性体部を形成し、前記起立面に通電する電気めっき処理を行って、前記めっき析出物を含む前記軟磁性層を前記起立面上に形成することを特徴とする磁気センサの製造方法である。上記の製造方法によれば、非磁性体部と軟磁性層とを有する磁界方向変換部を備える磁気センサを容易に製造することが可能である。 As another aspect of the present invention, there is provided a method of manufacturing a magnetic sensor, wherein the soft magnetic layer includes a plating deposit, wherein the magnetoresistive effect element is formed on the first surface, and A non-magnetic insulating layer is formed so as to cover the resistance effect element, the non-magnetic body portion having the conductive surface on the rising surface is formed on the non-magnetic insulating layer, and an electroplating process for energizing the rising surface is performed. The method is a method for manufacturing a magnetic sensor, wherein the soft magnetic layer containing the plating deposit is formed on the standing surface. According to the above-described manufacturing method, it is possible to easily manufacture the magnetic sensor including the magnetic field direction changing section having the non-magnetic body section and the soft magnetic layer.
前記非磁性絶縁層の面における前記非磁性体部が形成されていない部分に対して導体化処理を行い、前記電気めっき処理によって、前記非磁性絶縁層の面における前記非磁性体部が形成されていない部分にめっき層を形成してもよい。この部分に形成されためっき層は、前述の第１延出部として機能することができる。 A portion of the surface of the non-magnetic insulating layer where the non-magnetic material portion is not formed is subjected to a conductor treatment, and the electroplating treatment forms the non-magnetic material portion on the surface of the non-magnetic insulating layer. You may form a plating layer in the part which is not. The plating layer formed in this portion can function as the above-mentioned first extending portion.
前記非磁性体部における前記第１面に対向する側とは反対側の面は導電性を有し、前記電気めっき処理によって前記反対側の面にめっき層を形成してもよい。この部分に形成されためっき層は、前述の第２延出部として機能することができる。 A surface of the non-magnetic material portion opposite to the first surface may have conductivity, and a plating layer may be formed on the opposite surface by the electroplating treatment. The plating layer formed in this portion can function as the above-mentioned second extending portion.
前記非磁性体部は、非磁性の導電性材料を含有するめっき析出物を含んでいてもよい。この場合には、その後のめっき処理により、非磁性体部の起立面上に軟磁性層を形成することや、非磁性体部における第１面に対向する側とは反対側の面上に第２延出部を形成することが容易となる。 The non-magnetic body portion may include a plating deposit containing a non-magnetic conductive material. In this case, a soft magnetic layer is formed on the rising surface of the non-magnetic body portion by a subsequent plating treatment, or a soft magnetic layer is formed on the surface of the non-magnetic body portion opposite to the first surface. It becomes easy to form the two extending portions.
本発明によれば、磁界の特定の方向の成分を別の方向の成分に変換する機能を有する磁気センサであって、オフセットずれの問題が生じにくい構造を有する磁気センサが提供される。また、本発明によれば、上記の磁気センサの製造方法も提供される。 According to the present invention, there is provided a magnetic sensor having a function of converting a component in a specific direction of a magnetic field into a component in another direction, the magnetic sensor having a structure in which a problem of offset deviation does not easily occur. The present invention also provides a method for manufacturing the above magnetic sensor.
以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は特許請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。本発明の説明のために参照する図面の寸法は適宜変更して示している。 Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. Further, not all of the combinations of features described in the embodiments are essential to the solving means of the invention. Dimensions of drawings referred to for describing the present invention are appropriately changed and shown.
図１は、第１の実施形態における磁気センサの斜視図である。図２は、図１のＩＩ−ＩＩ線で切断して矢印方向から見たときの磁気センサの断面図である。 FIG. 1 is a perspective view of a magnetic sensor according to the first embodiment. FIG. 2 is a cross-sectional view of the magnetic sensor taken along the line II-II of FIG. 1 and viewed from the direction of the arrow.
本実施形態の磁気センサ１０は、例えば、垂直方向の磁界成分を検出するＺ軸磁気センサとして用いることができ、モバイル機器等に搭載される地磁気センサとして構成される。 The magnetic sensor 10 of the present embodiment can be used as, for example, a Z-axis magnetic sensor that detects a magnetic field component in the vertical direction, and is configured as a geomagnetic sensor mounted on a mobile device or the like.
図１に示すように、本実施形態の磁気センサ１０は、基板１５の一面である第１面１５Ａの上に設けられた第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２と、磁界方向変換部３０とを有して構成される。図２に示すように、磁界方向変換部３０は、非磁性体部４０、第１の軟磁性層３５および第２の軟磁性層３６、一方の第１延出部３８１および他方の第１延出部３８２、ならびに第２の延出部３７を備える。 As shown in FIG. 1, the magnetic sensor 10 of the present embodiment includes a first magnetoresistive effect element 21 and a second magnetoresistive effect element 22 provided on a first surface 15A which is one surface of a substrate 15. , And a magnetic field direction conversion unit 30. As shown in FIG. 2, the magnetic field direction conversion part 30 includes a non-magnetic part 40, a first soft magnetic layer 35 and a second soft magnetic layer 36, one first extension part 381 and the other first extension part 381. The projecting portion 382 and the second extending portion 37 are provided.
非磁性体部４０は、非磁性材料からなり第１面１５Ａから離れる向き（具体的には、図２に示すＺ１方向）に起立する部材である。 The non-magnetic member 40 is a member made of a non-magnetic material and standing in a direction away from the first surface 15A (specifically, the Z1 direction shown in FIG. 2).
図１および図２に示されるように、本実施形態に係る磁気センサ１０の非磁性体部４０はＹ１−Ｙ２方向を長軸とする直方体の形状を有する。したがって、非磁性体部４０における、非磁性体部４０のＸ１−Ｘ２方向（第１方向）に並んで対向する２つの面である第１の起立面４０Ｓ１および第２の起立面４０Ｓ２は、いずれも、Ｘ１−Ｘ２方向（第１方向）に法線を有する。第１の起立面４０Ｓ１の上には、めっき析出物からなる第１の軟磁性層３５が設けられている。第２の起立面４０Ｓ２の上には、めっき析出物からなる第２の軟磁性層３６が設けられている。第１の軟磁性層３５および第２の軟磁性層３６は、ＮｉＦｅ、ＣｏＦｅ、ＣｏＦｅＳｉＢ、ＣｏＺｒＴｉ、ＣｏＺｒＮｂから選ばれた少なくとも１つの材料が含まれる軟磁性材料から形成される。 As shown in FIGS. 1 and 2, the non-magnetic body portion 40 of the magnetic sensor 10 according to the present embodiment has a rectangular parallelepiped shape whose major axis is in the Y1-Y2 direction. Therefore, in the non-magnetic body portion 40, the first standing surface 40S1 and the second standing surface 40S2, which are the two surfaces facing each other in the X1-X2 direction (first direction) of the non-magnetic body portion 40, are both Also has a normal line in the X1-X2 direction (first direction). A first soft magnetic layer 35 made of a plating deposit is provided on the first rising surface 40S1. A second soft magnetic layer 36 made of a plating deposit is provided on the second raised surface 40S2. The first soft magnetic layer 35 and the second soft magnetic layer 36 are formed of a soft magnetic material containing at least one material selected from NiFe, CoFe, CoFeSiB, CoZrTi, and CoZrNb.
このように、本実施形態に係る磁気センサ１０は、第１の軟磁性層３５および第２の軟磁性層３６は、非磁性体部４０の一部の表面を覆うように形成されている。そのため、表面から内部に至る全体を軟磁性体で形成した磁気センサと比べ、本実施形態に係る磁気センサ１０は、軟磁性体の体積が少ないため、外部磁界による帯磁を低減することができる。 As described above, in the magnetic sensor 10 according to the present embodiment, the first soft magnetic layer 35 and the second soft magnetic layer 36 are formed so as to cover a part of the surface of the non-magnetic body portion 40. Therefore, compared to the magnetic sensor in which the entire surface from the surface to the inside is formed of a soft magnetic material, the magnetic sensor 10 according to the present embodiment can reduce the magnetization due to the external magnetic field because the volume of the soft magnetic material is small.
図２に示すように、Ｚ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）の成分５１を有する外部磁界が印加されたときに、この外部磁界のＺ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）の成分（垂直磁界成分）５１は、これらの第１の軟磁性層３５および第２の軟磁性層３６を通過して、第１の軟磁性層３５および第２の軟磁性層３６における第１面１５Ａ側から、第１の軟磁性層３５および第２の軟磁性層３６と第１面１５Ａとの間に位置する領域に流出する。この領域には、非磁性絶縁層１６ならびに非磁性絶縁層１６に埋設された状態にある第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２が位置する。この領域に流れ出た磁界成分は、非磁性絶縁層１６内で流れの方向が変化して、Ｘ１−Ｘ２方向（第１方向）に沿った水平方向の磁界成分となる。こうして方向が変換された磁界成分は、第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２に印加され、これらの磁気抵抗効果素子で測定可能となる。 As shown in FIG. 2, when an external magnetic field having a component 51 in the Z1-Z2 direction (vertical direction, normal direction of the first surface 15A) is applied, the Z1-Z2 direction (vertical direction, The component (perpendicular magnetic field component) 51 in the normal direction of the first surface 15A passes through the first soft magnetic layer 35 and the second soft magnetic layer 36, and passes through the first soft magnetic layer 35 and the first soft magnetic layer 35. The second soft magnetic layer 36 flows out from the first surface 15A side to a region located between the first soft magnetic layer 35 and the second soft magnetic layer 36 and the first surface 15A. In this region, the nonmagnetic insulating layer 16 and the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 embedded in the nonmagnetic insulating layer 16 are located. The magnetic field component flowing into this region changes its flow direction in the non-magnetic insulating layer 16 and becomes a horizontal magnetic field component along the X1-X2 direction (first direction). The magnetic field component whose direction is changed in this way is applied to the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22, and can be measured by these magnetoresistive effect elements.
第１の軟磁性層３５のＸ１−Ｘ２方向（第１方向）の長さ（厚さ）Ｗａは、Ｚ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）の磁界成分５１を第１面１５Ａ側に伝えることができる限り、任意である。具体的には、上記の厚さＷａは、０．０５μｍ以上であることが好ましい場合があり、０．１μｍ以上であることがより好ましい場合があり、０．２μｍ以上であることが特に好ましい場合がある。第２の軟磁性層３６のＸ１−Ｘ２方向（第１方向）の幅についても同様である。 The length (thickness) Wa of the first soft magnetic layer 35 in the X1-X2 direction (first direction) includes the magnetic field component 51 in the Z1-Z2 direction (vertical direction, normal direction of the first surface 15A). It is arbitrary as long as it can be transmitted to the first surface 15A side. Specifically, the thickness Wa may be preferably 0.05 μm or more, more preferably 0.1 μm or more, and particularly preferably 0.2 μm or more. There is. The same applies to the width of the second soft magnetic layer 36 in the X1-X2 direction (first direction).
一方の第１延出部３８１は、第１の軟磁性層３５の第１面１５Ａに対向する側から第１の軟磁性層３５に連続してＸ１側に延び、第１の磁気抵抗効果素子２１の第１面１５Ａに対向する側と反対側の面の上に、第１の磁気抵抗効果素子２１と非接触に配置されている。第１延出部３８１は第１の軟磁性層３５と同様に軟磁性材料からなり、第１の軟磁性層３５に磁気的に接続される。なお、本明細書において、「磁気的に接続される」とは、透磁率が同等である複数の部材が実質的に隙間なく配置されている状態をいう。この状態を実現できる限り、磁気的に接続される接続される２つの部材間に他の部材が介在していてもよい。 One of the first extending portions 381 extends from the side facing the first surface 15A of the first soft magnetic layer 35 to the X1 side continuously with the first soft magnetic layer 35, and the first magnetoresistive effect element. The first magnetoresistive effect element 21 is arranged on the surface of 21 opposite to the first surface 15A in a non-contact manner. The first extending portion 381 is made of a soft magnetic material similarly to the first soft magnetic layer 35, and is magnetically connected to the first soft magnetic layer 35. In the present specification, “magnetically connected” means a state in which a plurality of members having the same magnetic permeability are arranged substantially without a gap. As long as this state can be realized, another member may be interposed between the two magnetically connected members to be connected.
第１延出部３８１は軟磁性材料からなるため、第１の軟磁性層３５における残留磁化に基づく磁界成分は、非磁性絶縁層１６内に流れ出るよりも、第１の軟磁性層３５から第１延出部３８１へと流れやすい。したがって、不所望な方向の磁界成分が第１の磁気抵抗効果素子２１に印加されにくく、第１の磁気抵抗効果素子２１の磁気シールドとして機能する場合もある。 Since the first extending portion 381 is made of a soft magnetic material, the magnetic field component based on the residual magnetization in the first soft magnetic layer 35 flows from the first soft magnetic layer 35 to the first soft magnetic layer 35 rather than flowing into the nonmagnetic insulating layer 16. It is easy to flow to the 1 extension part 381. Therefore, a magnetic field component in an undesired direction is hard to be applied to the first magnetoresistive effect element 21, and may function as a magnetic shield of the first magnetoresistive effect element 21.
他方の第１延出部３８２は、第２の軟磁性層３６の第１面１５Ａに対向する側から第２の軟磁性層３６に連続してＸ２側に延び、第２の磁気抵抗効果素子２２の第１面１５Ａに対向する側と反対側の面の上に、第２の磁気抵抗効果素子２２と非接触に配置されている。他方の第１延出部３８２は軟磁性材料からなり、第２の軟磁性層３６に磁気的に接続される。このため、一方の第１延出部３８１の場合と同様に、他方の第１延出部３８２によって、第２の軟磁性層３６における残留磁化に基づく磁界成分が非磁性絶縁層１６内に流れ出ることが抑制され、不所望な方向の磁界成分が第２の磁気抵抗効果素子２２に印加されにくくなる。他方の第１延出部３８２も第２の磁気抵抗効果素子２２の磁気シールドとして機能する場合もある。 The other first extending portion 382 extends from the side facing the first surface 15A of the second soft magnetic layer 36 to the X2 side continuously with the second soft magnetic layer 36, and the second magnetoresistive effect element. The second magnetoresistive effect element 22 is disposed on the surface of 22 opposite to the first surface 15A in a non-contact manner. The other first extending portion 382 is made of a soft magnetic material and is magnetically connected to the second soft magnetic layer 36. Therefore, similarly to the case of the one first extending portion 381, the magnetic field component based on the residual magnetization in the second soft magnetic layer 36 flows into the nonmagnetic insulating layer 16 by the other first extending portion 382. This is suppressed, and it becomes difficult for a magnetic field component in an undesired direction to be applied to the second magnetoresistive effect element 22. The other first extending portion 382 may also function as a magnetic shield for the second magnetoresistive effect element 22.
第２延出部３７は、第１の軟磁性層３５および第２の軟磁性層３６の第１面１５Ａに対向する側とは反対側から、第１の軟磁性層３５および第２の軟磁性層３６のそれぞれに連続してＸ１−Ｘ２方向（第１方向）に延びて、非磁性体部４０における第１面１５Ａに対向する側とは反対側の面４０ａの上に設けられる。第２延出部３７は、Ｚ１−Ｚ２方向（垂直方向、第１面の法線方向）の磁界成分を集めて第１の軟磁性層３５および第２の軟磁性層３６を流れるＺ１−Ｚ２方向（垂直方向、第１面の法線方向）の磁界成分５１を強めることができる。 The second extending portion 37 is formed from the side opposite to the side facing the first surface 15A of the first soft magnetic layer 35 and the second soft magnetic layer 36 from the first soft magnetic layer 35 and the second soft magnetic layer 35. It extends in the X1-X2 direction (first direction) continuously with each of the magnetic layers 36, and is provided on the surface 40a of the non-magnetic body portion 40 opposite to the side facing the first surface 15A. The second extending portion 37 collects the magnetic field component in the Z1-Z2 direction (vertical direction, normal to the first surface) and flows through the first soft magnetic layer 35 and the second soft magnetic layer 36. The magnetic field component 51 in the direction (vertical direction, normal to the first surface) can be strengthened.
非磁性体部４０のＸ１−Ｘ２方向（第１方向）の長さ（幅）Ｗｂは、ある程度広いことが好ましい。上記の幅Ｗｂは第１の軟磁性層３５と第２の軟磁性層３６との離間距離に等しいため、上記の幅Ｗｂが過度に狭い場合には、互いに隣に位置する軟磁性層に流れる磁束同士が影響して、第１の軟磁性層３５におけるＺ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）の磁界成分５１と、第２の軟磁性層３６におけるＺ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）の磁界成分５１とがキャンセルしてしまう。軟磁性層３５と第２の軟磁性層３６との間隔が広がると、こうした負の影響が少なくなるため、第１の軟磁性層３５と第２の軟磁性層３６のそれぞれに流れるＺ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）の磁界成分５１が低下しにくい。限定されない例示をすれば、上記の幅Ｗｂは、１０μｍ以上であることが好ましい場合があり、１５μｍ以上であることがより好ましい場合がある。 It is preferable that the length (width) Wb of the non-magnetic body portion 40 in the X1-X2 direction (first direction) is wide to some extent. Since the width Wb is equal to the distance between the first soft magnetic layer 35 and the second soft magnetic layer 36, when the width Wb is excessively narrow, the width Wb flows to the soft magnetic layers adjacent to each other. The magnetic fluxes affect each other, and the magnetic field component 51 in the Z1-Z2 direction (vertical direction, the normal direction of the first surface 15A) in the first soft magnetic layer 35 and the Z1-Z2 direction in the second soft magnetic layer 36. The magnetic field component 51 in the vertical direction (the direction normal to the first surface 15A) is canceled. If the distance between the soft magnetic layer 35 and the second soft magnetic layer 36 is widened, such a negative influence is reduced. Therefore, Z1-Z2 flowing in the first soft magnetic layer 35 and the second soft magnetic layer 36, respectively. The magnetic field component 51 in the direction (vertical direction, normal to the first surface 15A) is less likely to decrease. As a non-limiting example, the width Wb may be preferably 10 μm or more, and more preferably 15 μm or more.
非磁性体部４０のＺ１−Ｚ２方向（第１面１５Ａの法線方向）の長さ（高さ）Ｈｂは、特に限定されない。上記の高さＨｂが過度に低い場合には、Ｚ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）に沿って磁界成分を流す機能が低下して、非磁性絶縁層１６に流れ出る磁界成分の強度が低下する可能性があり、上記の非磁性体部４０の高さＨｂが過度に高い場合には、非磁性体部４０の製造容易性が低下して、非磁性体部４０の形状精度や配置精度が低下する可能性があることを考慮して適宜設定すればよい。限定されない例示として、非磁性体部４０の高さＨｂは、２μｍ以上であることが好ましい場合があり、４μｍ以上であることがより好ましい場合があり、６μｍ以上であることが特に好ましい場合がある。非磁性体部４０の高さＨｂは、１０μｍ以下であることが好ましい場合があり、９μｍ以下であることがより好ましい場合があり、８μｍ以下であることが特に好ましい場合がある。 The length (height) Hb in the Z1-Z2 direction (normal direction of the first surface 15A) of the non-magnetic body part 40 is not particularly limited. When the height Hb is excessively low, the function of flowing the magnetic field component along the Z1-Z2 direction (vertical direction, normal direction of the first surface 15A) deteriorates and flows out to the nonmagnetic insulating layer 16. When the height Hb of the non-magnetic body portion 40 is excessively high, the strength of the magnetic field component may be reduced, and thus the manufacturability of the non-magnetic body portion 40 is reduced and the non-magnetic body portion 40 is reduced. It may be appropriately set in consideration of the possibility that the shape accuracy and the placement accuracy of the above may decrease. As a non-limiting example, the height Hb of the non-magnetic member 40 may be preferably 2 μm or more, more preferably 4 μm or more, and particularly preferably 6 μm or more. .. The height Hb of the non-magnetic member portion 40 may be preferably 10 μm or less, more preferably 9 μm or less, and particularly preferably 8 μm or less.
図３は、第１の実施形態に係る磁気センサの平面図である。図４は、図３のＶ−Ｖ線で切断して矢印方向から見たときの磁気抵抗効果素子の部分拡大断面図である。 FIG. 3 is a plan view of the magnetic sensor according to the first embodiment. FIG. 4 is a partially enlarged cross-sectional view of the magnetoresistive effect element when cut along the line VV of FIG. 3 and viewed from the arrow direction.
本実施形態において、第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２としてＧＭＲ（Ｇｉａｎｔ Ｍａｇｎｅｔｏ Ｒｅｓｉｓｔａｎｃｅ）素子が用いられる。図４に示すように、第１の磁気抵抗効果素子２１は、膜面内に印加される外部磁界を検出することができる磁気抵抗効果膜４３を有して構成される。磁気抵抗効果膜４３は、絶縁膜４２およびシード層４９を介してシリコン基板４１の面の上に形成されている。磁気抵抗効果膜４３は、磁化の向きが固定された固定磁性層４５と、外部磁界により磁化の向きが変化する自由磁性層４７とを有し、図４に示すように、固定磁性層４５、非磁性層４６、および自由磁性層４７の順に積層されて、自由磁性層４７の表面が保護膜４８で覆われて構成されている。なお、図４では第１の磁気抵抗効果素子２１について示しているが、他の磁気抵抗効果素子（第２の磁気抵抗効果素子２２など）においても同様の構成である。 In the present embodiment, GMR (Giant Magneto Resistance) elements are used as the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22. As shown in FIG. 4, the first magnetoresistive effect element 21 has a magnetoresistive effect film 43 capable of detecting an external magnetic field applied within the film surface. The magnetoresistive effect film 43 is formed on the surface of the silicon substrate 41 via the insulating film 42 and the seed layer 49. The magnetoresistive film 43 has a pinned magnetic layer 45 whose magnetization direction is fixed and a free magnetic layer 47 whose magnetization direction is changed by an external magnetic field. As shown in FIG. The nonmagnetic layer 46 and the free magnetic layer 47 are laminated in this order, and the surface of the free magnetic layer 47 is covered with a protective film 48. Although FIG. 4 shows the first magnetoresistive effect element 21, other magnetoresistive effect elements (second magnetoresistive effect element 22 and the like) have the same configuration.
本実施形態において、固定磁性層４５は第１の固定磁性層４５ｃ／非磁性結合層４５ｅ／第２の固定磁性層４５ｄからなる、いわゆるセルフピン型の積層構成となっている。第１の固定磁性層４５ｃがシード層４９と接しており、また、第２の固定磁性層４５ｄが非磁性層４６と接する。第１の固定磁性層４５ｃの磁化と第２の固定磁性層４５ｄの磁化とは、導電電子による間接的な交換相互作用（ＲＫＫＹ的相互作用）により１８０°異なる向き（図４中、符号４５ａおよび４５ｂで示される。）に設定されている。非磁性層４６を挟む自由磁性層４７の磁化の向きと第２の固定磁性層４５ｄの磁化の向きとの相対関係が磁気抵抗効果に寄与するため、第２の固定磁性層４５ｄの磁化の向きが、図３に示す固定磁性層の磁化の向き４５ａとなる。 In the present embodiment, the pinned magnetic layer 45 has a so-called self-pinned laminated structure composed of the first pinned magnetic layer 45c/nonmagnetic coupling layer 45e/second pinned magnetic layer 45d. The first pinned magnetic layer 45c is in contact with the seed layer 49, and the second pinned magnetic layer 45d is in contact with the nonmagnetic layer 46. The magnetization of the first pinned magnetic layer 45c and the magnetization of the second pinned magnetic layer 45d are different by 180° due to indirect exchange interaction (RKKY-like interaction) due to conductive electrons (reference numeral 45a in FIG. 4 and 45b). Since the relative relationship between the magnetization direction of the free magnetic layer 47 sandwiching the non-magnetic layer 46 and the magnetization direction of the second pinned magnetic layer 45d contributes to the magnetoresistive effect, the magnetization direction of the second pinned magnetic layer 45d. Corresponds to the magnetization direction 45a of the pinned magnetic layer shown in FIG.
本実施形態において、絶縁膜４２はシリコン基板４１を熱酸化したシリコン酸化膜であり、スパッタ法等で成膜したアルミナ膜、酸化膜等であってもよい。固定磁性層４５の第１の固定磁性層４５ｃと第２の固定磁性層４５ｄは、ＣｏＦｅ合金（コバルト鉄合金）などの軟磁性材料等で形成されている。非磁性結合層４５ｅは導電性のＲｕ等が用いられる。非磁性層４６は、Ｃｕ（銅）等である。自由磁性層４７は、保磁力が小さく透磁率が大きいＮｉＦｅ合金（ニッケル鉄合金）などの軟磁性材料が用いられる。また、本実施形態において自由磁性層４７を単層で示しているが、例えばＮｉＦｅ層とＣｏＦｅ層とを積層した構成とすることも可能である。保護膜４８は、Ｔａ（タンタル）等である。 In this embodiment, the insulating film 42 is a silicon oxide film obtained by thermally oxidizing the silicon substrate 41, and may be an alumina film, an oxide film or the like formed by a sputtering method or the like. The first pinned magnetic layer 45c and the second pinned magnetic layer 45d of the pinned magnetic layer 45 are formed of a soft magnetic material such as CoFe alloy (cobalt iron alloy). Conductive Ru or the like is used for the non-magnetic coupling layer 45e. The nonmagnetic layer 46 is Cu (copper) or the like. The free magnetic layer 47 is made of a soft magnetic material such as a NiFe alloy (nickel iron alloy) having a small coercive force and a large magnetic permeability. Further, although the free magnetic layer 47 is shown as a single layer in the present embodiment, for example, it is possible to have a structure in which a NiFe layer and a CoFe layer are laminated. The protective film 48 is made of Ta (tantalum) or the like.
図３に示すように、第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２は、それぞれＹ１−Ｙ２方向に細長く延びる平面矩形状に形成されており、Ｘ１−Ｘ２方向において互いに間隔を設けて配置されている。図３には、固定磁性層の磁化の向き４５ａと、自由磁性層の磁化の向き４７ａとをそれぞれ矢印で模式的に示している。第１の磁気抵抗効果素子２１の固定磁性層の磁化の向き４５ａと、第２の磁気抵抗効果素子２２の固定磁性層の磁化の向き４５ａとは揃えられている。図３では、一具体例として、延出方向（第１面１５Ａの法線方向）に対して直交する方向のうち、Ｘ１−Ｘ２方向Ｘ２側の向きに揃えられている。また、自由磁性層の磁化の向き４７ａは、第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２のそれぞれの形状異方性により延出方向（Ｙ１−Ｙ２方向）で互いに同じ向き（例えばＹ１側）に向けられている。固定磁性層の磁化の向き４５ａと自由磁性層の磁化の向き４７ａとは、それぞれ第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２の面内に向けられており、外部磁界が印加されていない状態において互いに直交するように設定されている。 As shown in FIG. 3, each of the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 is formed in a plane rectangular shape elongated in the Y1-Y2 direction, and is spaced from each other in the X1-X2 direction. Are arranged. In FIG. 3, the magnetization direction 45a of the pinned magnetic layer and the magnetization direction 47a of the free magnetic layer are schematically shown by arrows. The magnetization direction 45a of the pinned magnetic layer of the first magnetoresistive effect element 21 and the magnetization direction 45a of the pinned magnetic layer of the second magnetoresistive effect element 22 are aligned. In FIG. 3, as a specific example, among the directions orthogonal to the extending direction (the normal direction of the first surface 15A), they are aligned in the X1-X2 direction X2 side. The magnetization directions 47a of the free magnetic layers are the same in the extending direction (Y1-Y2 direction) due to the shape anisotropy of each of the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22. (For example, the Y1 side). The magnetization direction 45a of the pinned magnetic layer and the magnetization direction 47a of the free magnetic layer are oriented in the planes of the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22, respectively, and the external magnetic field It is set so as to be orthogonal to each other in the non-applied state.
固定磁性層の磁化の向き（Ｘ１−Ｘ２方向Ｘ２側）４５ａに沿った向きに外部磁界が印加された場合には、自由磁性層の磁化の向き４７ａが、外部磁界の向き（Ｘ１−Ｘ２方向Ｘ２側）に揃うように変動して固定磁性層の磁化の向き４５ａと平行に近づき、電気抵抗値が低下する。 When an external magnetic field is applied in a direction along the magnetization direction (X1-X2 direction X2 side) 45a of the pinned magnetic layer, the magnetization direction 47a of the free magnetic layer changes to the external magnetic field direction (X1-X2 direction). (X2 side) to approach the parallel to the magnetization direction 45a of the pinned magnetic layer and the electric resistance value decreases.
一方、固定磁性層の磁化の向き（Ｘ１−Ｘ２方向Ｘ２側）４５ａとは反対向き（Ｘ１−Ｘ２方向Ｘ１側）に外部磁界が印加された場合には、自由磁性層の磁化の向き４７ａが、外部磁界の向き（Ｘ１−Ｘ２方向Ｘ１側）に揃うように変動して固定磁性層の磁化の向き４５ａと反平行に近づき、電気抵抗値が増大する。 On the other hand, when the external magnetic field is applied in the opposite direction (X1-X2 direction X1 side) to the magnetization direction (X1-X2 direction X2 side) 45a of the pinned magnetic layer, the free magnetic layer magnetization direction 47a changes. , The magnetic field changes so as to be aligned with the direction of the external magnetic field (X1-X2 direction X1 side), approaches antiparallel to the magnetization direction 45a of the pinned magnetic layer, and increases the electrical resistance value.
図３に示すように、第１の磁気抵抗効果素子２１と第２の磁気抵抗効果素子２２とは、例えばＣｕ等の非磁性材料を用いて形成された配線部２５によりＹ１−Ｙ２方向Ｙ１側において接続されている。また、第１の磁気抵抗効果素子２１と第２の磁気抵抗効果素子２２のＹ１−Ｙ２方向Ｙ２側は、配線部２５を介して外部回路等に接続される。 As shown in FIG. 3, the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 are connected to the Y1-Y2 direction Y1 side by the wiring portion 25 formed of a nonmagnetic material such as Cu. Are connected in. Moreover, the Y1-Y2 direction Y2 side of the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 is connected to an external circuit or the like via the wiring portion 25.
図５は、２つの磁気抵抗効果素子により構成されるハーフブリッジ回路の回路図を示す。図５に示すように、磁気抵抗効果素子２１と磁気抵抗効果素子２２とは、入力端子（Ｖｄｄ）とグラウンド端子（ＧＮＤ）との間で直列接続されてハーフブリッジ回路２７を構成している。そして、磁気抵抗効果素子２１と磁気抵抗効果素子２２との間の中点電位（Ｖ１）が、差動増幅器５４により増幅されて、磁気センサ１０の出力信号として外部回路（図示しない）に出力される。 FIG. 5 shows a circuit diagram of a half bridge circuit composed of two magnetoresistive effect elements. As shown in FIG. 5, the magnetoresistive effect element 21 and the magnetoresistive effect element 22 are connected in series between the input terminal (V dd ) and the ground terminal (GND) to form a half bridge circuit 27. .. Then, the midpoint potential (V 1 ) between the magnetoresistive effect element 21 and the magnetoresistive effect element 22 is amplified by the differential amplifier 54 and output to an external circuit (not shown) as an output signal of the magnetic sensor 10. To be done.
前述のように、本実施形態に係る磁気センサ１０において、磁界方向変換部３０に集磁されたＺ１−Ｚ２方向（垂直方向、第１面１５Ａの法線方向）の磁界成分５１は、第１の軟磁性層３５および第２の軟磁性層３６を通過し、第１面１５Ａに近位側から流出して基板１５の第１面１５Ａの面内方向（水平方向）の磁界成分に変換される。そして、図２に示すように、第１面１５Ａの面内方向（水平方向）のうち第１方向に変換された磁界成分は、第１の磁気抵抗効果素子２１にはＸ２側の向きに印加され、第２の磁気抵抗効果素子２２にはＸ１側の向きに印加され、互いに逆向きに作用する。 As described above, in the magnetic sensor 10 according to the present embodiment, the magnetic field component 51 in the Z1-Z2 direction (vertical direction, the normal direction of the first surface 15A) collected by the magnetic field direction conversion unit 30 is the first magnetic field component. Passing through the soft magnetic layer 35 and the second soft magnetic layer 36, flowing out from the proximal side to the first surface 15A, and converted into a magnetic field component in the in-plane direction (horizontal direction) of the first surface 15A of the substrate 15. It Then, as shown in FIG. 2, the magnetic field component converted in the first direction of the in-plane direction (horizontal direction) of the first surface 15A is applied to the first magnetoresistive effect element 21 in the X2 side direction. Then, the second magnetoresistive effect element 22 is applied in the X1 side direction and acts in opposite directions.
よって、図３に示す第１の磁気抵抗効果素子２１の自由磁性層の磁化の向き４７ａは、電気抵抗値が増大する方向に向けられ、第２の磁気抵抗効果素子２２の自由磁性層の磁化の向き４７ａは、電気抵抗値が減少する方向に向けられる。したがって、図５に示すハーフブリッジ回路２７の中点電位（Ｖ１）が変化し、これにより、垂直方向（第１面１５Ａの法線方向、Ｚ１−Ｚ２方向）の磁界成分５１を検出することができる。 Therefore, the magnetization direction 47a of the free magnetic layer of the first magnetoresistive effect element 21 shown in FIG. 3 is oriented in the direction in which the electric resistance value increases, and the magnetization of the free magnetic layer of the second magnetoresistive effect element 22 is magnetized. Direction 47a is oriented in the direction in which the electric resistance value decreases. Therefore, the midpoint potential (V 1 ) of the half-bridge circuit 27 shown in FIG. 5 changes, so that the magnetic field component 51 in the vertical direction (the normal direction of the first surface 15A, the Z1-Z2 direction) can be detected. You can
本実施形態に係る磁気センサ１０は２つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１、第２の磁気抵抗効果素子２２）を備えるが、本発明の一実施形態に係る磁気センサが備える磁気抵抗効果素子の数は限定されない。本発明の一実施形態に係る磁気センサが備える磁気抵抗効果素子の数は１つであってもよい。この場合の構造の具体的な一例として、磁気センサ１０が第２の磁気抵抗効果素子２２を備えない場合の構造が挙げられる。 The magnetic sensor 10 according to the present embodiment includes two magnetoresistive effect elements (the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22), but the magnetic sensor according to the embodiment of the present invention includes the magnetoresistive effect element. The number of magnetoresistive effect elements is not limited. The number of magnetoresistive effect elements included in the magnetic sensor according to the embodiment of the present invention may be one. A specific example of the structure in this case is a structure in which the magnetic sensor 10 does not include the second magnetoresistive effect element 22.
本発明の一実施形態に係る磁気センサが備える磁気抵抗効果素子の数が３以上である場合の具体例として、磁気センサがハーフブリッジ回路２７を２つ備え、これらの２つのハーフブリッジ回路２７がフルブリッジ回路を構成する場合が挙げられる。以下、このような磁気センサを本発明の第２の実施形態に係る磁気センサとして説明する。 As a specific example in the case where the number of magnetoresistive effect elements included in the magnetic sensor according to the embodiment of the present invention is three or more, the magnetic sensor includes two half bridge circuits 27, and these two half bridge circuits 27 are An example is a case where a full bridge circuit is configured. Hereinafter, such a magnetic sensor will be described as a magnetic sensor according to the second embodiment of the present invention.
図６は、第２の実施形態の磁気センサを示し、磁気センサを構成する磁気抵抗効果素子の平面図である。図７は、図６のＸＩＩ−ＸＩＩ線で切断して矢印方向から見たときの磁気センサの断面図である。また、図８は、４つの磁気抵抗効果素子により構成されるフルブリッジ回路の回路図である。 FIG. 6 shows a magnetic sensor of the second embodiment, and is a plan view of a magnetoresistive effect element that constitutes the magnetic sensor. FIG. 7 is a cross-sectional view of the magnetic sensor taken along the line XII-XII in FIG. 6 and viewed from the direction of the arrow. In addition, FIG. 8 is a circuit diagram of a full-bridge circuit including four magnetoresistive effect elements.
本実施形態の磁気センサ１１は、第１の軟磁性層３５および第２の軟磁性層３６が複数設けられている点が異なっている。図７に示すように、第１の軟磁性層３５と第２の軟磁性層３６とが交互にＸ１−Ｘ２方向に連続して形成されている。隣り合う第２の軟磁性層３６と第１の軟磁性層３５とは、第１面１５Ａに近位側において第１延出部３８により接続されて、また、第１面１５Ａに遠位側において第２延出部３７により接続されており、第１延出部３８と第２延出部３７とは、Ｘ１−Ｘ２方向において交互に設けられている。複数の第１の軟磁性層３５と複数の第２の軟磁性層３６とがＸ１−Ｘ２方向に繋がって形成されて１つの磁界方向変換部３２を構成している。 The magnetic sensor 11 of this embodiment is different in that a plurality of first soft magnetic layers 35 and second soft magnetic layers 36 are provided. As shown in FIG. 7, first soft magnetic layers 35 and second soft magnetic layers 36 are alternately formed continuously in the X1-X2 direction. The second soft magnetic layer 36 and the first soft magnetic layer 35 which are adjacent to each other are connected by the first extending portion 38 on the proximal side of the first surface 15A and on the distal side of the first surface 15A. Are connected by the second extending portion 37, and the first extending portion 38 and the second extending portion 37 are alternately provided in the X1-X2 direction. A plurality of first soft magnetic layers 35 and a plurality of second soft magnetic layers 36 are formed so as to be connected to each other in the X1-X2 direction to form one magnetic field direction conversion unit 32.
図７に示すように、複数の第１の軟磁性層３５および複数の第２の軟磁性層３６の第１面１５Ａに近位側にそれぞれ磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）が配置されている。図６に示すように、４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）のそれぞれの固定磁性層の磁化の向き４５ａはいずれも同一の向き（Ｘ１−Ｘ２方向Ｘ２側）に向けられている。また、外部磁界が印加されていない状態において、自由磁性層の磁化の向き４７ａは、形状異方性により磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）の延出方向（Ｙ１−Ｙ２方向）のＹ１側に向けられている。 As shown in FIG. 7, the magnetoresistive effect elements (first magnetoresistive effect element 21) are respectively provided on the proximal sides of the first surfaces 15A of the plurality of first soft magnetic layers 35 and the plurality of second soft magnetic layers 36. , 23 and second magnetoresistive effect elements 22, 24) are arranged. As shown in FIG. 6, the magnetization directions 45a of the pinned magnetic layers of each of the four magnetoresistive effect elements (the first magnetoresistive effect elements 21 and 23 and the second magnetoresistive effect elements 22 and 24) are all. They are oriented in the same direction (X1-X2 direction X2 side). Further, in the state where the external magnetic field is not applied, the magnetization direction 47a of the free magnetic layer has a magneto-resistance effect element (the first magneto-resistance effect element 21, 23 and the second magneto-resistance effect element) due to the shape anisotropy. (22, 24) is directed toward the Y1 side in the extending direction (Y1-Y2 direction).
本実施形態において、図８に示すように、４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）によりフルブリッジ回路２９が構成されている。第１の磁気抵抗効果素子２１と第２の磁気抵抗効果素子２２とが直列接続されたハーフブリッジ回路２７から中点電位（Ｖ１）が出力され、第１の磁気抵抗効果素子２３と第２の磁気抵抗効果素子２４とが直列接続されたハーフブリッジ回路２８から中点電位（Ｖ２）が出力される。入力端子（Ｖｄｄ）とグラウンド端子（ＧＮＤ）との間で、ハーフブリッジ回路２７とハーフブリッジ回路２８とが並列接続されてフルブリッジ回路２９を構成する。図８に示すように、中点電位（Ｖ１）と中点電位（Ｖ２）との差分が差動増幅器５４により増幅されてセンサ出力（Ｖｏｕｔ）として出力される。なお、本実施形態では、フルブリッジ回路２９は４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）から構成されているが、これに限定されず、出力を大きくするためにより多数の磁気抵抗効果素子を用いることもできる。 In the present embodiment, as shown in FIG. 8, a full bridge circuit 29 is configured by four magnetoresistive effect elements (first magnetoresistive effect elements 21 and 23 and second magnetoresistive effect elements 22 and 24). There is. The midpoint potential (V 1 ) is output from the half-bridge circuit 27 in which the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 are connected in series, and the first magnetoresistive effect element 23 and the second magnetoresistive effect element 23 are connected. The midpoint potential (V 2 ) is output from the half-bridge circuit 28 in which the magnetoresistive effect element 24 is connected in series. The half bridge circuit 27 and the half bridge circuit 28 are connected in parallel between the input terminal (V dd ) and the ground terminal (GND) to form a full bridge circuit 29. As shown in FIG. 8, the difference between the midpoint potential (V 1 ) and the midpoint potential (V 2 ) is amplified by the differential amplifier 54 and output as a sensor output (V out ). In the present embodiment, the full-bridge circuit 29 is composed of four magnetoresistive effect elements (first magnetoresistive effect elements 21 and 23 and second magnetoresistive effect elements 22 and 24). There is no limitation, and a larger number of magnetoresistive elements can be used to increase the output.
このように、フルブリッジ回路２９を構成することにより、４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）のそれぞれについて水平方向（第１面１５Ａの面内方向）の磁界成分に起因する抵抗変化が同じになるため、フルブリッジ回路２９からセンサ出力として出力されず、垂直方向（第１面１５Ａの法線方向、Ｚ１−Ｚ２方向）の磁界成分による抵抗変化のみが出力される。 By configuring the full bridge circuit 29 in this manner, the four magnetoresistive effect elements (the first magnetoresistive effect elements 21 and 23 and the second magnetoresistive effect elements 22 and 24) are horizontally (first) Since the resistance change caused by the magnetic field component in the first surface 15A is the same, the sensor output is not output from the full bridge circuit 29, and the vertical direction (normal direction of the first surface 15A, Z1-Z2 direction). ) Only the resistance change due to the magnetic field component is output.
また、図６に示すように複数の第１の軟磁性層３５および第２の軟磁性層３６を連続して設けた場合であっても、図７に示される構成を備えることから、Ｚ１−Ｚ２方向における残留磁化の発生によりブリッジ回路の中点電位が変化することを抑制することができ、センサ出力のオフセットずれの発生を抑制することができる。 Even when a plurality of first soft magnetic layers 35 and second soft magnetic layers 36 are continuously provided as shown in FIG. 6, since the configuration shown in FIG. 7 is provided, Z1- It is possible to suppress the change in the midpoint potential of the bridge circuit due to the generation of residual magnetization in the Z2 direction, and it is possible to suppress the occurrence of offset deviation of the sensor output.
また、本実施形態において、複数の第１の軟磁性層３５および複数の第２の軟磁性層３６を連続して設けていることから、水平方向の磁界成分（Ｘ１−Ｘ２方向の磁界成分およびＹ１−Ｙ２方向の磁界成分）が、連続する第１の軟磁性層３５および第２の軟磁性層３６に効果的に集められる。したがって、水平方向の磁界成分（Ｘ１−Ｘ２方向の磁界成分およびＹ１−Ｙ２方向の磁界成分）が各磁気抵抗効果素子２１〜２４に印加されることを抑制して、垂直方向（第１面１５Ａの法線方向、Ｚ１−Ｚ２方向）の磁界成分５１を確実に検出することができるため、センサ感度を安定させることができる。 Further, in this embodiment, since the plurality of first soft magnetic layers 35 and the plurality of second soft magnetic layers 36 are continuously provided, the horizontal magnetic field component (X1-X2 direction magnetic field component and The magnetic field component in the Y1-Y2 direction) is effectively collected in the continuous first soft magnetic layer 35 and second soft magnetic layer 36. Therefore, the horizontal magnetic field components (the magnetic field components in the X1-X2 direction and the magnetic field components in the Y1-Y2 direction) are suppressed from being applied to the magnetoresistive effect elements 21 to 24, and the vertical direction (the first surface 15A). Since it is possible to reliably detect the magnetic field component 51 in the normal direction (Z1, Z2 direction), the sensor sensitivity can be stabilized.
図９は、シミュレーションに用いた磁気センサの断面図である。図９に示されるように、シミュレーションに用いた磁気センサ１２では、非磁性体部４０のＸ１−Ｘ２方向（第１方向）の幅ＷおよびＺ１−Ｚ２方向（第１面１５Ａの法線方向）の高さＴが所定の値に設定される。第１の軟磁性層３５および第２の軟磁性層３６、第１延出部３８ならびに第２延出部３７は、等しい厚さｔに設定されて、非磁性絶縁層１６の面や非磁性体部４０の面の上に位置している。第１の軟磁性層３５および第２の軟磁性層３６から流れ出てＸ１−Ｘ２方向（第１方向）に変換された磁界成分が印加されるように、４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）は配置されている。 FIG. 9 is a cross-sectional view of the magnetic sensor used in the simulation. As shown in FIG. 9, in the magnetic sensor 12 used for the simulation, the width W of the non-magnetic body portion 40 in the X1-X2 direction (first direction) and the Z1-Z2 direction (normal direction of the first surface 15A). Height T is set to a predetermined value. The first soft magnetic layer 35 and the second soft magnetic layer 36, the first extending portion 38, and the second extending portion 37 are set to have the same thickness t, and the surface of the nonmagnetic insulating layer 16 and the nonmagnetic insulating layer 16 are nonmagnetic. It is located on the surface of the body 40. The four magnetoresistive effect elements (the first soft magnetic layer 35 and the second soft magnetic layer 36) are applied so that the magnetic field components flowing out from the first soft magnetic layer 35 and the second soft magnetic layer 36 and converted in the X1-X2 direction (first direction) are applied. The magnetoresistive effect elements 21, 23 and the second magnetoresistive effect elements 22, 24) are arranged.
非磁性体部４０の幅Ｗおよび高さＴならびに第１の軟磁性層３５等の厚さｔを変化させた磁気センサ１２に対して垂直方向（第１面１５Ａの法線方向、Ｚ１−Ｚ２方向）に外部磁界として２．４ｍＴを印加したときに、これらの磁気抵抗効果素子のそれぞれの感度軸方向に印加される磁界（検知磁界、単位：ｍＴ）について計算した。 A direction perpendicular to the magnetic sensor 12 in which the width W and the height T of the non-magnetic body portion 40 and the thickness t of the first soft magnetic layer 35 and the like are changed (the normal direction of the first surface 15A, Z1-Z2). Direction), a magnetic field (detection magnetic field, unit: mT) applied in the direction of the sensitivity axis of each of these magnetoresistive effect elements when 2.4 mT was applied as an external magnetic field was calculated.
図１０は、非磁性体部４０の幅Ｗが１０μｍであって、第１の軟磁性層３５等の厚さｔが１μｍである場合に、非磁性体部４０の高さＴを変化させたときのシミュレーション結果である。図１０中のＮｏ．１からＮｏ．４は、４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）のそれぞれを意味する。図１０に示されるように、非磁性体部４０の高さＴが６μｍに至るまでは、非磁性体部４０の高さＴと検知磁界とには正の相関が認められるが、非磁性体部４０の高さＴが６μｍ以降は、検知磁界は非磁性体部４０の高さＴの影響を受けにくくなることが示された。前述のように、非磁性体部４０の高さＴを大きくすることは製造容易性を低下させる場合があるため、このシミュレーションの条件では、非磁性体部４０の高さＴを６μｍとすることが好ましいことが理解される。 In FIG. 10, the height T of the non-magnetic material portion 40 is changed when the width W of the non-magnetic material portion 40 is 10 μm and the thickness t of the first soft magnetic layer 35 and the like is 1 μm. It is a simulation result at the time. No. in FIG. 1 to No. Reference numeral 4 means each of the four magnetoresistive effect elements (the first magnetoresistive effect elements 21 and 23 and the second magnetoresistive effect elements 22 and 24). As shown in FIG. 10, there is a positive correlation between the height T of the non-magnetic material portion 40 and the detection magnetic field until the height T of the non-magnetic material portion 40 reaches 6 μm. It was shown that when the height T of the portion 40 is 6 μm or more, the detection magnetic field is less likely to be affected by the height T of the non-magnetic body portion 40. As described above, increasing the height T of the non-magnetic body portion 40 may reduce the manufacturability. Therefore, the height T of the non-magnetic body portion 40 should be 6 μm under the conditions of this simulation. Is understood to be preferred.
図１１は、非磁性体部４０の高さＴが６μｍであって、第１の軟磁性層３５等の厚さｔが１μｍである場合に、非磁性体部４０の幅Ｗを変化させたときのシミュレーション結果である。図１１中のＮｏ．１からＮｏ．４は、４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）のそれぞれを意味する。図１１に示されるように、非磁性体部４０の幅Ｗが１０μｍに至るまで、非磁性体部４０の幅Ｗと検知磁界とには正の相関が認められた。非磁性体部４０の幅Ｗが小さくなるほど検知磁界は低下する傾向がみられる。これは互いに隣に位置する軟磁性層に流れこむ磁束同士が影響してしまうためと考えられる。非磁性体部４０の幅Ｗが１５μｍ程度以上の場合には、非磁性体部４０の幅Ｗと検知磁界との相関性は低くなる可能性がある。 In FIG. 11, the width W of the non-magnetic material portion 40 was changed when the height T of the non-magnetic material portion 40 was 6 μm and the thickness t of the first soft magnetic layer 35 and the like was 1 μm. It is a simulation result at the time. No. in FIG. 1 to No. 4 means each of four magnetoresistive effect elements (the 1st magnetoresistive effect elements 21 and 23 and the 2nd magnetoresistive effect elements 22 and 24). As shown in FIG. 11, a positive correlation was observed between the width W of the non-magnetic body portion 40 and the detection magnetic field until the width W of the non-magnetic body portion 40 reaches 10 μm. The detection magnetic field tends to decrease as the width W of the non-magnetic member 40 decreases. It is considered that this is because the magnetic fluxes flowing into the soft magnetic layers adjacent to each other influence each other. When the width W of the non-magnetic body portion 40 is about 15 μm or more, the correlation between the width W of the non-magnetic body portion 40 and the detection magnetic field may be low.
図１２は、非磁性体部４０の幅Ｗが１０μｍであってその高さＴが５μｍである場合に、第１の軟磁性層３５等の厚さｔを変化させたときのシミュレーション結果である。図１２中のＮｏ．１からＮｏ．４は、４つの磁気抵抗効果素子（第１の磁気抵抗効果素子２１，２３および第２の磁気抵抗効果素子２２，２４）のそれぞれを意味する。図１２に示されるように、第１の軟磁性層３５等の厚さｔが０．２μｍ以上の場合には、検知磁界はほぼ一定（１．５ｍＴ程度）となる結果が示された。このシミュレーションの条件では、第１の軟磁性層３５等の厚さｔを０．２μｍとすることが好ましいことが理解される。 FIG. 12 is a simulation result when the thickness t of the first soft magnetic layer 35 and the like is changed when the width W of the non-magnetic body portion 40 is 10 μm and the height T thereof is 5 μm. .. No. 12 in FIG. 1 to No. 4 means each of four magnetoresistive effect elements (the 1st magnetoresistive effect elements 21 and 23 and the 2nd magnetoresistive effect elements 22 and 24). As shown in FIG. 12, when the thickness t of the first soft magnetic layer 35 or the like is 0.2 μm or more, the detection magnetic field is almost constant (about 1.5 mT). Under the conditions of this simulation, it is understood that the thickness t of the first soft magnetic layer 35 and the like is preferably 0.2 μm.
本発明のいくつかの実施形態に係る磁気センサの製造方法は限定されない。以下、図１に示される磁気センサ１０を製造する方法を、本発明の一実施形態に係る磁気センサの製造方法として説明する。図１３から図１９は本発明の一実施形態に係る磁気センサの製造方法を説明する図である。 The manufacturing method of the magnetic sensor according to some embodiments of the present invention is not limited. Hereinafter, a method of manufacturing the magnetic sensor 10 shown in FIG. 1 will be described as a method of manufacturing the magnetic sensor according to the embodiment of the present invention. 13 to 19 are views for explaining the method of manufacturing the magnetic sensor according to the embodiment of the invention.
本発明の一実施形態に係る磁気センサの製造方法では、まず、シリコンなどからなる基板１５の第１面１５Ａの上に、第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２を形成する（図１３）。前述のように、これらの磁気抵抗効果素子は磁気抵抗効果膜４３を有するため、磁気抵抗効果膜４３を構成する各層を順次積層することが行われる。第１の磁気抵抗効果素子２１の第２の固定磁性層４５ｄは、Ｘ１−Ｘ２方向（第１方向）Ｘ２側の向きに磁化されるように磁場中製膜が行われる。第２の磁気抵抗効果素子２２は第１の磁気抵抗効果素子２１と同時に製造されるため、第２の磁気抵抗効果素子２２にも第１の磁気抵抗効果素子２１と同様の磁化が行われる。 In the method of manufacturing the magnetic sensor according to the embodiment of the present invention, first, the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 are provided on the first surface 15A of the substrate 15 made of silicon or the like. (FIG. 13). As described above, since these magnetoresistive effect elements have the magnetoresistive effect film 43, the layers forming the magnetoresistive effect film 43 are sequentially laminated. The second pinned magnetic layer 45d of the first magnetoresistive effect element 21 is formed in a magnetic field so as to be magnetized in the X1-X2 direction (first direction) X2 side. Since the second magnetoresistive effect element 22 is manufactured at the same time as the first magnetoresistive effect element 21, the second magnetoresistive effect element 22 is magnetized similarly to the first magnetoresistive effect element 21.
次に、第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２を覆うように非磁性絶縁層１６を形成する（図１４）。非磁性絶縁層１６を構成する材料として、アルミナが例示される。非磁性絶縁層１６の厚さは限定されない。第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２の厚さは通常０．１μｍ程度であり、磁界方向変換部３０から流れ出した磁界は非磁性絶縁層１６の内部で水平方向（第１面１５Ａの面内方向）に進むため、非磁性絶縁層１６は０．２μｍ程度またはそれ以上の厚さを有することが好ましい場合がある。非磁性絶縁層１６を形成する前に、第１の磁気抵抗効果素子２１および第２の磁気抵抗効果素子２２に接続される配線層（図示せず）を形成してもよい。 Next, the nonmagnetic insulating layer 16 is formed so as to cover the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 (FIG. 14). Alumina is exemplified as a material forming the nonmagnetic insulating layer 16. The thickness of the nonmagnetic insulating layer 16 is not limited. The thickness of the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 is usually about 0.1 μm, and the magnetic field flowing out from the magnetic field direction conversion unit 30 is horizontally (in the horizontal direction) inside the nonmagnetic insulating layer 16. In some cases, it is preferable that the nonmagnetic insulating layer 16 has a thickness of about 0.2 μm or more in order to proceed in the in-plane direction of the first surface 15A. Before forming the non-magnetic insulating layer 16, a wiring layer (not shown) connected to the first magnetoresistive effect element 21 and the second magnetoresistive effect element 22 may be formed.
続いて、非磁性絶縁層１６の面の上に導電層ＭＬを形成する（図１５）。蒸着、スパッタリングなどの乾式堆積技術を用いて導体化を行ってもよいし、無電解めっきのような湿式堆積技術を用いて導体化を行ってもよい。導電層を構成する材料は、非磁性材料であることが好ましい場合がある。導体化処理により形成される導電層ＭＬの厚さは、後述するめっき処理を可能とする限り任意である。本実施の形態においても、導電層ＭＬの厚さは数十ｎｍまたはそれ以下であって、その後のめっき処理（電気めっき処理を含む。）により形成されるめっき析出物（非磁性材料、磁性材料）の厚さとの対比で無視しうる。 Then, the conductive layer ML is formed on the surface of the nonmagnetic insulating layer 16 (FIG. 15). Conducting may be performed using a dry deposition technique such as vapor deposition or sputtering, or may be performed using a wet deposition technique such as electroless plating. It may be preferable that the material forming the conductive layer is a non-magnetic material. The thickness of the conductive layer ML formed by the conductorization treatment is arbitrary as long as the plating treatment described later is possible. Also in the present embodiment, the thickness of the conductive layer ML is several tens nm or less, and the plating deposits (non-magnetic material, magnetic material) formed by the subsequent plating treatment (including electroplating treatment). ) Can be ignored in comparison with the thickness.
こうして非磁性絶縁層１６の面の上に導電層ＭＬを形成したら、その上にレジストの層ＲＭを形成し、その一部に貫通孔ＶＨを形成する（図１６）。貫通孔の平面視の形状（Ｚ１−Ｚ２方向からみた形状）は第１面１５Ａの上に設けられることになる非磁性体部４０の平面視の形状に対応する。 After the conductive layer ML is formed on the surface of the nonmagnetic insulating layer 16 in this way, a resist layer RM is formed thereon and a through hole VH is formed in a part thereof (FIG. 16). The plan view shape of the through hole (the shape viewed from the Z1-Z2 direction) corresponds to the plan view shape of the non-magnetic member portion 40 to be provided on the first surface 15A.
続いて、金、銅などの非磁性材料を析出させるめっき処理を行う（図１７）。図１６の状態で導電層ＭＬが露出している部分にめっき析出物を堆積させるため、電気めっき処理を行うことが好ましい。非磁性体部４０はこうして堆積した非磁性材料のめっき析出物からなる。 Then, a plating process for depositing a non-magnetic material such as gold or copper is performed (FIG. 17). In order to deposit a plating deposit on the exposed portion of the conductive layer ML in the state of FIG. 16, it is preferable to perform electroplating. The non-magnetic body portion 40 is composed of the plating deposit of the non-magnetic material thus deposited.
その後、レジストの層ＲＭを除去することにより、非磁性体部４０が第１面１５Ａの上に突出した状態となり、第１の起立面４０Ｓ１および第２の起立面４０Ｓ２が露出する（図１８）。この面はめっき析出物からなるため、導電性を有する。また、非磁性絶縁層１６の面の上に位置する導電層ＭＬも、非磁性体部４０が位置する部分以外は露出した状態となる。 After that, by removing the resist layer RM, the non-magnetic body portion 40 is projected onto the first surface 15A, and the first upright surface 40S1 and the second upright surface 40S2 are exposed (FIG. 18). .. Since this surface is composed of a plating deposit, it has conductivity. In addition, the conductive layer ML located on the surface of the nonmagnetic insulating layer 16 is also exposed except for the portion where the nonmagnetic body portion 40 is located.
この状態で、鉄‐ニッケル合金などの磁性材料を析出させる電気めっき処理を行う。この電気めっき処理によって、非磁性体部４０の第１の起立面４０Ｓ１および第２の起立面４０Ｓ２、非磁性体部４０における第１面１５Ａに対向する側とは反対側の面４０ａ、ならびに導電層ＭＬの面における非磁性体部４０が設けられる部分以外の部分に磁性材料のめっき層が形成される。非磁性体部４０の第１の起立面４０Ｓ１の上に形成されためっき層は第１の軟磁性層３５となる。非磁性体部４０の第２の起立面４０Ｓ２の上に形成されためっき層は第２の軟磁性層３６となる。非磁性体部４０における第１面１５Ａに対向する側とは反対側の面４０ａの上に形成されためっき層は第２延出部３７となる。導電層ＭＬの面における非磁性体部４０が位置する部分以外の部分に形成されためっき層の一部は第１延出部（一方の第１延出部３８１、他方の第１延出部３８２）となる。 In this state, an electroplating process for depositing a magnetic material such as an iron-nickel alloy is performed. By this electroplating treatment, the first rising surface 40S1 and the second rising surface 40S2 of the non-magnetic body portion 40, the surface 40a of the non-magnetic body portion 40 opposite to the side facing the first surface 15A, and the conductivity. A plating layer of a magnetic material is formed on a portion of the surface of the layer ML other than the portion where the non-magnetic body portion 40 is provided. The plating layer formed on the first rising surface 40S1 of the non-magnetic body portion 40 becomes the first soft magnetic layer 35. The plating layer formed on the second raised surface 40S2 of the non-magnetic body portion 40 becomes the second soft magnetic layer 36. The plating layer formed on the surface 40a of the non-magnetic body portion 40 opposite to the side facing the first surface 15A becomes the second extending portion 37. A part of the plating layer formed on a portion of the surface of the conductive layer ML other than the portion where the non-magnetic member portion 40 is located is a first extension portion (one first extension portion 381, the other first extension portion 381). 382).
以上の製造方法により、磁気センサ１０が製造される。 The magnetic sensor 10 is manufactured by the above manufacturing method.
以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、特許請求の範囲の記載から明らかである。例えば、本発明の効果が適切に得られる限り、図などにおいて積層されるように示される各構成要素間に他の層が設けられていてもよい。 Although the present invention has been described using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is apparent to those skilled in the art that various changes or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention. For example, as long as the effect of the present invention is appropriately obtained, other layers may be provided between the respective constituent elements shown to be stacked in the drawings and the like.
１０，１１，１２ 磁気センサ
１５ 基板
１５Ａ 第１面
２１，２３ 第１の磁気抵抗効果素子
２２，２４ 第２の磁気抵抗効果素子
３０，３２ 磁界方向変換部
４０ 非磁性体部
３５ 第１の軟磁性層
３６ 第２の軟磁性層
３８１ 一方の第１延出部
３８２ 他方の第１延出部
３７ 第２延出部
４０Ｓ１ 第１の起立面
４０Ｓ２ 第２の起立面
５１ 外部磁界のＺ１−Ｚ２方向の成分（Ｚ１−Ｚ２方向の磁界成分）
１６ 非磁性絶縁層
４０ａ 非磁性体部４０における第１面１５Ａに対向する側とは反対側の面
Ｗａ 第１の軟磁性層３５のＸ１−Ｘ２方向（第１方向）の長さ（厚さ）
Ｗｂ 非磁性体部４０のＸ１−Ｘ２方向（第１方向）の長さ（幅）
Ｈｂ 非磁性体部４０のＺ１−Ｚ２方向（第１面１５Ａの法線方向）の長さ（高さ）
４３ 磁気抵抗効果膜
４２ 絶縁膜
４９ シード層
４１ シリコン基板
４５ 固定磁性層
４７ 自由磁性層
４６ 非磁性層
４８ 保護膜
４５ｃ 第１の固定磁性層
４５ｅ 非磁性結合層
４５ｄ 第２の固定磁性層
４５ａ 固定磁性層の磁化の向き
４５ｂ 第１の固定磁性層の磁化の向き
４７ａ 自由磁性層の磁化の向き
２５ 配線部
２７，２８ ハーフブリッジ回路
５４ 差動増幅器
３８ 第１延出部
２９ フルブリッジ回路
ＲＭ レジストの層
ＶＨ 貫通孔
ＭＬ 導電層
10, 11, 12 Magnetic sensor 15 Substrate 15A First surface 21, 23 First magnetoresistive effect element 22, 24 Second magnetoresistive effect element 30, 32 Magnetic field direction conversion section 40 Non-magnetic body section 35 First soft Magnetic layer 36 2nd soft magnetic layer 381 One 1st extension part 382 The other 1st extension part 37 2nd extension part 40S1 1st upright surface 40S2 2nd upright surface 51 Z1-Z2 of an external magnetic field Direction component (magnetic field component in Z1-Z2 direction)
16 Nonmagnetic Insulating Layer 40a Surface of Nonmagnetic Material Part 40 Opposite to First Surface 15A Side Wa First soft magnetic layer 35 X1-X2 direction (first direction) length (thickness) )
Length (width) of the Wb non-magnetic body portion 40 in the X1-X2 direction (first direction)
Hb Length (height) of the non-magnetic body portion 40 in the Z1-Z2 direction (direction normal to the first surface 15A).
43 magnetoresistive film 42 insulating film 49 seed layer 41 silicon substrate 45 fixed magnetic layer 47 free magnetic layer 46 non-magnetic layer 48 protective film 45c first fixed magnetic layer 45e non-magnetic coupling layer 45d second fixed magnetic layer 45a fixed Direction of magnetization of magnetic layer 45b Direction of magnetization of first pinned magnetic layer 47a Direction of magnetization of free magnetic layer 25 Wiring part 27, 28 Half bridge circuit 54 Differential amplifier 38 First extension part 29 Full bridge circuit RM resist Layer VH Through hole ML Conductive layer
Claims (13)
非磁性材料からなり前記第１面から離れる向きに起立面を有する非磁性体部と、
前記起立面に設けられた軟磁性層とを備え、
外部磁界が印加されたときに、前記軟磁性層を通過した磁界成分が前記磁気抵抗効果素子に印加されるように、前記磁気抵抗効果素子と前記軟磁性層とは非接触に配置され、
前記軟磁性層の前記第１面に対向する側から前記軟磁性層に連続して前記第１方向に延びて、前記磁気抵抗効果素子の第１面に対向する側とは反対側の面の上に、前記磁気抵抗効果素子とは非接触に配置され、軟磁性材料からなる第１延出部をさらに備えること
を特徴とする磁気センサ。 A magnetoresistive effect element provided on a first surface which is one surface of a substrate and having a sensitivity axis along a first direction which is one of in-plane directions of the first surface;
A non-magnetic body portion made of a non-magnetic material and having an upright surface in a direction away from the first surface;
A soft magnetic layer provided on the upright surface,
When an external magnetic field is applied, so that the magnetic field component passing through the soft magnetic layer is applied to the magnetoresistive effect element, the magnetoresistive effect element and the soft magnetic layer are arranged in non-contact ,
From the side of the soft magnetic layer facing the first surface, extending in the first direction continuously to the soft magnetic layer, of the surface opposite to the side facing the first surface of the magnetoresistive effect element. above, wherein the magnetoresistive element is disposed in a non-contact, magnetic sensor and further comprising said Rukoto the first extending portion made of a soft magnetic material.
前記軟磁性層は、前記第１の起立面に設けられた第１の軟磁性層および第２の起立面に設けられた第２の軟磁性層を備え、
前記磁気抵抗効果素子は、前記第１の軟磁性層から流出して前記第１方向の成分に変換された前記外部磁界が印加されるように配置された第１の磁気抵抗効果素子と、前記第２の軟磁性層から流出して前記第１方向の成分に変換された前記外部磁界が印加されるように配置された第２の磁気抵抗効果素子とを備える、請求項１または２に記載の磁気センサ。 The upright surface has a first upright surface and a second upright surface facing each other,
The soft magnetic layer includes a first soft magnetic layer provided on the first upright surface and a second soft magnetic layer provided on a second upright surface,
The magnetoresistive effect element includes a first magnetoresistive effect element arranged so as to be applied with the external magnetic field flowing out of the first soft magnetic layer and converted into the component in the first direction. and a second magnetoresistive element the external magnetic field is converted to a component of flows out the first direction from the second soft magnetic layer is arranged to be applied, according to claim 1 or 2 Magnetic sensor.
前記第１の磁気抵抗効果素子の前記固定磁性層の磁化の向きと、前記第２の磁気抵抗効果素子の前記固定磁性層の磁化の向きとは揃えられている、請求項３に記載の磁気センサ。 The magnetoresistive effect element includes a pinned magnetic layer whose magnetization is fixed in a direction along one of the first directions, and a free magnetic layer whose magnetization direction is changed by an external magnetic field,
The magnetic direction according to claim 3 , wherein a magnetization direction of the pinned magnetic layer of the first magnetoresistive effect element and a magnetization direction of the pinned magnetic layer of the second magnetoresistive effect element are aligned. Sensor.
前記第１面上に前記磁気抵抗効果素子を形成し、
前記磁気抵抗効果素子を覆うように非磁性絶縁層を形成し、
前記非磁性絶縁層上に、前記起立面が導電性を有する前記非磁性体部を形成し、
前記起立面に通電する電気めっき処理を行って、前記めっき析出物を含む前記軟磁性層を前記起立面上に形成すること
を特徴とする磁気センサの製造方法。 A method of manufacturing a magnetic sensor according to claim 9 , wherein
Forming the magnetoresistive effect element on the first surface;
A non-magnetic insulating layer is formed to cover the magnetoresistive element,
On the non-magnetic insulating layer, the standing surface is formed with the non-magnetic material portion having conductivity,
A method of manufacturing a magnetic sensor, characterized in that the soft magnetic layer containing the plating deposit is formed on the rising surface by performing an electroplating treatment for energizing the rising surface.
前記電気めっき処理によって、前記非磁性絶縁層の面における前記非磁性体部が形成されていない部分にめっき層を形成する、請求項１０に記載の磁気センサの製造方法。 Conducting the portion of the surface of the non-magnetic insulating layer where the non-magnetic material portion is not formed into a conductor,
The method of manufacturing a magnetic sensor according to claim 10 , wherein the electroplating process forms a plating layer on a portion of the surface of the nonmagnetic insulating layer where the nonmagnetic portion is not formed.
The method for manufacturing a magnetic sensor according to claim 10 , wherein the non-magnetic body portion includes a plating deposit containing a non-magnetic conductive material.
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