CN106463612A - Magnetoresistive element, magnetic sensor and current sensor - Google Patents
Magnetoresistive element, magnetic sensor and current sensor Download PDFInfo
- Publication number
- CN106463612A CN106463612A CN201580028916.0A CN201580028916A CN106463612A CN 106463612 A CN106463612 A CN 106463612A CN 201580028916 A CN201580028916 A CN 201580028916A CN 106463612 A CN106463612 A CN 106463612A
- Authority
- CN
- China
- Prior art keywords
- magnetoresistive element
- ferromagnetic layer
- layer
- duplexer
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 309
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 134
- 230000005415 magnetization Effects 0.000 claims abstract description 51
- 230000008878 coupling Effects 0.000 claims abstract description 43
- 238000010168 coupling process Methods 0.000 claims abstract description 43
- 238000005859 coupling reaction Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000005303 antiferromagnetism Effects 0.000 claims description 68
- 239000000956 alloy Substances 0.000 claims description 37
- 229910045601 alloy Inorganic materials 0.000 claims description 37
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 229910052742 iron Inorganic materials 0.000 claims description 15
- 230000011514 reflex Effects 0.000 claims description 15
- 229910052748 manganese Inorganic materials 0.000 claims description 13
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 3
- 229910000575 Ir alloy Inorganic materials 0.000 claims 1
- 229910000914 Mn alloy Inorganic materials 0.000 claims 1
- 230000005290 antiferromagnetic effect Effects 0.000 abstract 4
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 209
- 230000008859 change Effects 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 230000009021 linear effect Effects 0.000 description 16
- 238000001514 detection method Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 230000033228 biological regulation Effects 0.000 description 6
- 239000005001 laminate film Substances 0.000 description 6
- 230000003827 upregulation Effects 0.000 description 6
- 229910003271 Ni-Fe Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000003321 amplification Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000005307 ferromagnetism Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910003286 Ni-Mn Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
This magnetoresistive element (1) is provided with a substrate (10), a laminate body (12) provided above the substrate (10) and formed by laminating an antiferromagnetic layer (14) and a ferromagnetic layer (15) in that order from the substrate (10), and electrode units (18) provided on both ends of the laminate body (12). The ferromagnetic layer (15) is provided on the antiferromagnetic layer (14) so as to cover the entire principle surface of the antiferromagnetic layer (14), and the magnetization direction of the ferromagnetic layer (15) fixed by the exchange coupling magnetic field generated between the ferromagnetic layer (15) and the antiferromagnetic layer (14) intersects with the direction of the line that connects the electrode units (18) on the shortest path.
Description
Technical field
The present invention relates to magnetoresistive element, Magnetic Sensor and current sensor.
Background technology
In the past, as the magneto-resistance effect element employing anisotropic magneto-resistive effect it is known that AMR (Anisotropic
Magneto Resistance：Anisotropic-magnetoresistance effect) element.AMR element has performance anisotropic magneto-resistive effect
Ferromagnetic layer.
In general, anisotropic magneto-resistive effect is by the sense of current of flowing and ferromagnetic layer in magnetoresistive element
Direction of magnetization etc. is determining.Figure 25 is the direction of magnetization representing the sense of current of flowing and ferromagnetic layer in magnetoresistive element
An example figure.Figure 26 is the figure representing the general output characteristics of magnetoresistive element.
As shown in figure 25, if the magnetization M by the moving direction of the electric current I of flowing in magnetoresistive element and ferromagnetic layer
Direction intersect angle be set to θ, then as shown in figure 26, the resistance R of magnetoresistive element is expressed as R=R0+ Δ Rcos2θ.Herein,
R0 is the fixing value part of resistance, and Δ R is the maximum of changing unit.In the case of there is no external magnetic field, due to magnetizing quilt
It is manufactured into towards long side direction (easy magnetizing axis), so the characteristic of AMR element is with magnetic field 0 for symmetrically having even function characteristic.
AMR element is used in magnetic head or the Magnetic Sensor of magnetic recording media mostly.In the case of being somebody's turn to do, by ferromagnetic
Layer applying bias magnetic field carrys out dual function characteristic and carries out odd number function.Thus, the magneto-resistor of AMR element changes to external magnetic field
Respond in linear.
As the method for the odd number function beyond bias magnetic field is applied to such ferromagnetic layer, propose one kind and pass through
The conducting film (barber-pole stripes electrode) tilting with respect to long side direction (easy axle) is formed on ferromagnetic layer, so that strong
The barber-pole stripes biasing means that in magnetic layer, the sense of current of flowing tilts.
As the document disclosing the magnetoresistive element being provided with barber-pole stripes electrode, for example, enumerate " THE BARBER
POLE, A LINEAR MAGNETORESISTIVE HEAD ", K.E.Kuijk, W.J.van Gestel and F.W.Gorter,
IEEE Transactions on Magnetics, vol.Mag-11, no.5, September 1975 (non-patent literature 1).
Non-patent literature 1:" THE BARBER POLE, A LINEAR MAGNETORESISTIVE HEAD ",
K.E.Kuijk, W.J.van Gestel and F.W.Gorter, IEEE Transactions on Magnetics,
Vol.Mag-11, no.5, September 1975
However, magnetoresistive element disclosed in as non-patent literature 1, barber-pole stripes electrode is arranged on ferromagnetic layer
In the case of, because the ferromagnetic immediately below barber-pole stripes electrode does not detect magnetic signal, so sense magnetic area reduces.Separately
Outward, the resistance of barber-pole stripes electrode is added to the resistance of ferromagnetic.Therefore, the magnetoresistive ratio having magnetoresistive element diminishes
Misgivings.
Content of the invention
The present invention be in view of problem as described above and complete, it is an object of the invention to provide one kind can suppress feel
The minimizing of magnetic area, and improve magnetoresistive ratio, magnetoresistive element, Magnetic Sensor and current sensor.
Based on the magnetoresistive element of the present invention possess substrate, the top being arranged on aforesaid substrate and by antiferromagnetism body layer and
The duplexer of ferromagnetic layer stackup and be arranged on above-mentioned duplexer two ends electrode portion.Above-mentioned ferromagnetic
One side of layer and above-mentioned antiferromagnetism body layer is arranged on the another of above-mentioned ferromagnetic layer and above-mentioned antiferromagnetism body layer
So that the interarea covering the opposing party of above-mentioned ferromagnetic layer and above-mentioned antiferromagnetism body layer is overall, by above-mentioned strong magnetic in side
Produced exchange coupling magnetic field between gonosome layer and above-mentioned antiferromagnetism body layer and the magnetic of above-mentioned ferromagnetic layer fixed
Change direction and connect the direction intersection between above-mentioned electrode portion with beeline.
In the magnetoresistive element based on the invention described above, can in above-mentioned duplexer from aforesaid substrate side layer in order
Stacked on state antiferromagnetism body layer and above-mentioned ferromagnetic layer.
In the magnetoresistive element based on the invention described above, can in above-mentioned duplexer from aforesaid substrate side layer in order
Stacked on state ferromagnetic layer and above-mentioned antiferromagnetism body layer.
In the magnetoresistive element based on the invention described above, the above-mentioned strong magnetic preferably fixed by above-mentioned exchange coupling magnetic field
The above-mentioned direction of magnetization of gonosome layer and the angle connecting the direction intersection between above-mentioned electrode portion with beeline are 45 degree.
In the magnetoresistive element based on the invention described above, preferably above-mentioned antiferromagnetism body layer by comprise Ni, Fe, Pd, Pt with
And the alloy of the element of any one in Ir and Mn, the alloy comprising Pd, Pt and Mn or the alloy structure comprising Cr, Pt and Mn
Become.
In the magnetoresistive element based on the invention described above, preferably above-mentioned ferromagnetic layer by the alloy comprising Ni and Fe or
The alloy comprising Ni and Co is constituted.
The magnetoresistive element being preferably based on the invention described above is also equipped with exchange coupling magnetic field adjustment layer, above-mentioned exchange coupling magnetic field
Adjustment layer is arranged between above-mentioned antiferromagnetism body layer and above-mentioned ferromagnetic layer, strong with above-mentioned to above-mentioned antiferromagnetism body layer
Between magnetic layer, the size of produced exchange coupling magnetic field is adjusted.
In the magnetoresistive element based on the invention described above, preferably above-mentioned exchange coupling magnetic field adjustment layer by Co or comprises Co's
Alloy is constituted.
In the magnetoresistive element based on the invention described above, above-mentioned duplexer can be provided with multiple.Now, on preferably multiple
Each stating duplexer has and has the rectangular shape of mutually opposing 2 group opposite side in the case that stacked direction is observed, preferably
The direction of magnetization that multiple above-mentioned duplexers are arranged to above-mentioned ferromagnetic layer separated from each other is consistent.And, due to from above-mentioned
In the case that stacked direction is observed, the direction, above-mentioned electrode portion and the above-mentioned layer that extend along one group of opposite side in above-mentioned 2 groups of opposite side
Stack is alternately arranged.
In the magnetoresistive element based on the invention described above, above-mentioned duplexer can in the case of observing from stacked direction,
There is generally square shape.
In the magnetoresistive element based on the invention described above, multiple above-mentioned duplexers can be along in above-mentioned 2 groups of opposite side
The direction that group opposite side extends linearly is set up in parallel.
In the magnetoresistive element based on the invention described above, multiple above-mentioned duplexers can be another in above-mentioned 2 groups of opposite side
Arrange with staggering on the direction that group opposite side extends.
In the magnetoresistive element based on the invention described above, above-mentioned duplexer can include the above-mentioned direction of magnetization unanimously and be formed
Part for meander-like.
In the magnetoresistive element based on the invention described above, above-mentioned duplexer can also include respectively be formed as above-mentioned complications
The electrode basement portion that two sides of the part of shape connect.Now, preferably above-mentioned electrode portion is arranged in above-mentioned electrode basement portion.
In the magnetoresistive element based on the invention described above, be formed as above-mentioned meander-like partly can be by being arranged in parallel
Multiple reflex parts that multiple wire portions and the end making mutually adjacent above-mentioned wire portion connect alternating with each otherly are constituted.Now,
The low conductive layer of resistance ratio above-mentioned ferromagnetic layer is preferably respectively provided with above-mentioned multiple reflex parts.
In the magnetoresistive element based on the invention described above, above-mentioned duplexer can be provided with multiple.Now, preferably above-mentioned magnetic
Resistance element is abreast set up in parallel multiple above-mentioned duplexers by way of consistent with the direction of magnetization and above-mentioned electrode portion makes mutually
The end of adjacent above-mentioned duplexer connects alternating with each otherly, thus being formed as meander-like.
Above-mentioned magnetoresistive element is possessed based on the Magnetic Sensor of the present invention.
Possess the bus of the electric current flowing of measurement object and above-mentioned Magnetic Sensor based on the current sensor of the present invention.
In accordance with the invention it is possible to provide a kind of minimizing that can suppress sense magnetic area, and improve the magnetic of magnetoresistive ratio
Resistance element, Magnetic Sensor and current sensor.
Brief description
Fig. 1 is the schematic sectional view of the magnetoresistive element involved by embodiment 1.
Fig. 2 is the cuing open of state schematically showing the antiferromagnetism body layer shown in Fig. 1 and ferromagnetic layer spin-exchange-coupled
View.
Fig. 3 be the ferromagnetic layer fixed by the exchange coupling magnetic field from antiferromagnetism body layer the direction of magnetization,
And the top view in the direction between with beeline connection electrode portion.
Fig. 4 is the figure with the relation in magnetic field for the magneto-resistor representing the magnetoresistive element shown in Fig. 1.
Fig. 5 is the top view of the Magnetic Sensor being constituted using the magnetoresistive element shown in multiple Fig. 1.
Fig. 6 is the top view representing the Magnetic Sensor in the first variation.
Fig. 7 is the schematic sectional view of the magnetoresistive element involved by embodiment 2.
Fig. 8 is the top view of the Magnetic Sensor with the magnetoresistive element involved by comparative example.
Fig. 9 is the figure with the relation in magnetic field for the bridge voltage rate of change representing the Magnetic Sensor involved by embodiment 1.
Figure 10 is the figure with the relation in magnetic field for the bridge voltage rate of change representing the Magnetic Sensor involved by comparative example.
Figure 11 is the schematic diagram representing the current sensor involved by embodiment 3.
Figure 12 is to be shown schematically in the sectional view that the XII-XII line direction of arrow shown in from Figure 11 is observed to produce
Magnetic field figure.
Figure 13 is the schematic sectional view of the magnetoresistive element involved by embodiment 4.
Figure 14 is the top view of the magnetoresistive element involved by embodiment 5.
Figure 15 is the sectional view of the XV-XV line shown in along Figure 14.
Figure 16 is the figure for illustrating to shape anisotropy.
Figure 17 be represent magnetized direction changed according to shape anisotropy in the case of magneto-resistor and magnetic field pass
The figure of system.
Figure 18 is the top view of the Magnetic Sensor being constituted using the magnetoresistive element shown in multiple Figure 14.
Figure 19 is the top view of the Magnetic Sensor in the second variation.
Figure 20 is the top view of the magnetoresistive element involved by embodiment 6.
Figure 21 is the top view of the Magnetic Sensor being constituted using the magnetoresistive element shown in multiple Figure 20.
Figure 22 is the top view of the Magnetic Sensor in the 3rd variation.
Figure 23 is the top view of the Magnetic Sensor in the 4th variation.
Figure 24 is the top view of the Magnetic Sensor in the 5th variation.
Figure 25 is an example representing the direction of magnetization of the sense of current of flowing and ferromagnetic layer in magnetoresistive element
The figure of son.
Figure 26 is the figure representing the general output characteristics of magnetoresistive element.
Specific embodiment
Hereinafter, embodiments of the present invention are illustrated by reference picture in detail.Additionally, in embodiment party shown below
In formula, for part that is same or communicating, the additional same symbol of in figure, do not repeat its explanation.
(embodiment 1)
Fig. 1 is the schematic sectional view of the magnetoresistive element involved by present embodiment.With reference to Fig. 1, to involved by present embodiment
And magnetoresistive element 1 illustrate.
As shown in figure 1, magnetoresistive element 1 possesses substrate 10, insulating barrier 11, duplexer 12, a pair of electrodes portion 18 and protective layer
19.
Silicon substrate is for example used as substrate 10.Further, it is possible to use the insulative substrate such as glass substrate, plastic base is made
For substrate 10.Now, insulating barrier 11 can be omitted.
The first type surface that insulating barrier 11 is configured to cover substrate 10 is overall.Insulating barrier 11 is for example using silicon oxide layer (SiO2
Film), pellumina (Al2O3).Insulating barrier 11 for example can be formed by CVD etc..
Duplexer 12 for example has rectangular shape, has long side direction in figure DR1 direction.Duplexer 12 is arranged on
On insulating barrier 11.Duplexer 12 includes basalis 13, antiferromagnetism body layer 14 and ferromagnetic layer 15.As basalis 13,
Using a metal film being made up of metals such as Ta, W, Mo, Cr, Ti, Zr, by be made up of face-centered cubic crystalline substance and with anti-strong magnetic
The metal of (111) face preferred orientation in the interface parallel direction of gonosome layer 14, alloy (such as Ni, Au, Ag, Cu, Pt, Ni-Fe,
Co-Fe etc.) metal film constituting and the stacked film being laminated these metal films.Basalis 13 is arranged on insulation
On layer 11.Basalis 13 is in order that the crystallization of antiferromagnetism body layer 14 suitably grows and arranges.Additionally, basalis 13 exists
In the case of the crystalline growth of antiferromagnetism body layer 14 can suitably be made, it is convenient to omit.
Antiferromagnetism body layer 14 is arranged on the top of substrate 10.Specifically, antiferromagnetism body layer 14 is arranged on base
On bottom 13.Additionally, in the case of omitting basalis 13 as described above, antiferromagnetism body layer 14 is arranged at insulating barrier 11
On.
Antiferromagnetism body layer 14 is by the alloy of the element of any one comprising in Ni, Fe, Pd, Pt and Ir and Mn, bag
Alloy containing Pd, Pt and Mn, or the alloy that the alloy comprising Cr, Pt and Mn etc. comprises Mn constitutes.These alloys are due to adhesion
Temperature is high, so until high temperature exchange coupling magnetic field does not disappear.Therefore, it is possible to make magnetoresistive element 1 stably work.
Due to the alloy comprising Fe and Mn, the alloy comprising Pt and Mn, the alloy comprising Ir and Mn and comprise Cr, Pt and
The alloy of Mn is the irregular alloy of crystalline texture according to composition, so not needing the heat treatment for making spin-exchange-coupled produce
(for making the heat treatment of crystalline texture regularization).Accordingly, as antiferromagnetism body layer 14, employing the situation of these alloys
Under, manufacturing process can simplify.
Ferromagnetic layer 15 is arranged on antiferromagnetism body layer in the way of the interarea entirety covering antiferromagnetism body layer 14
On 14.Ferromagnetic layer 15 produces anisotropic magneto-resistive effect by the alloy comprising Ni and Fe, the alloy comprising Ni and Co etc.
Material is constituted.Comprise the alloy of Ni and Fe due to coercive force little, it is possible to reducing magnetic hysteresis.Particularly there is Ni80Fe20Or
With Ni80Fe20The crystal magnetic anisotropic of the cubic crystal of the alloy comprising Ni and Fe of close composition is almost changed into 0erg/cm3.
Crystal magnetic anisotropic is changed into 0erg/cm3Material due to not do not cause because of crystal magnetic anisotropic easy magnetizing axis, difficult magnetic
Change axle, so being isotropism.In addition, in the conjunction comprising Ni and Fe with above-mentioned composition and the composition close with this composition
Jin Zhong, magnetostriction is also almost changed into 0, so because of defect etc. of crystallization by magnetoelasticity the magnetic anisotropy that senses little.Separately
Outward, comprise alloy of Ni and Fe etc. due to can simply sense by the heat treatment in magnetic field throughout the overall macroscopic view of film
Easy magnetizing axis, so easily carry out throughout the overall easy magnetizing axis of film to design.
A pair of electrodes portion 18 is arranged on the two ends of duplexer 12 in the way of the mutually face-off of the upper surface in duplexer 12.
Electrode portion 18 is made up of the good metal material of the electric conductivity such as Al.In order to improve being close to of electrode portion 18 and ferromagnetic layer 15
Property, can arrange between electrode portion 18 and ferromagnetic layer 15 and be close to layer by what Ti etc. was constituted.
Protective layer 19 is arranged to cover duplexer 12 and a pair of electrodes portion 18.With a pair of electrodes portion on protective layer 19
The mode that 18 part is exposed arranges contact hole 19a.Protective layer 19 is for example by silicon oxide layer (SiO2) constitute, strong in order to prevent
Magnetic layer 15 etc. aoxidizes, corrodes and arrange.In addition it is also possible to be not provided with protective layer 19.
Fig. 2 is the cuing open of state schematically showing the antiferromagnetism body layer shown in Fig. 1 and ferromagnetic layer spin-exchange-coupled
View.With reference to Fig. 2, the state of antiferromagnetism body layer 14 and ferromagnetic layer 15 spin-exchange-coupled is illustrated.
As shown in Fig. 2 antiferromagnetism body layer 14 is arranged by the lower surface entire surface in ferromagnetic layer 15, thus exchanging
Coupled magnetic field acts on the entirety of ferromagnetic layer.The direction of magnetization thereby, it is possible to make ferromagnetic layer 15 is unanimously a side
To.That is, poling can be carried out to ferromagnetic layer 15.Being sized to for example according to ferromagnetic layer 15 of exchange coupling magnetic field
Thickness being adjusted.
Fig. 3 is the magnetization side representing the ferromagnetic layer fixed by the exchange coupling magnetic field from antiferromagnetism body layer
To and with beeline connection electrode portion between direction top view.
As shown in figure 3, by produced exchange coupling magnetic field quilt between ferromagnetic layer 15 and antiferromagnetism body layer 14
Fixing direction of magnetization M of ferromagnetic layer 15 and with beeline connection electrode portion 18 between direction (DR1 direction) intersect.Tool
For body, direction of magnetization M of ferromagnetic layer fixed by exchange coupling magnetic field with beeline connection electrode portion 18
Between direction intersect angle become 45 °.Thus, the major part of detection electric current I connects a pair of electrodes portion 18 to beeline
Between direction flowing, detection electric current I flowing direction intersected with 45 ° with direction of magnetization M of ferromagnetic layer 15.
During direction between in the direction of magnetization of such setting ferromagnetic layer 15 with beeline connection electrode portion 18, first
First formed to ferromagnetic layer 15 from basalis 13 using vacuum vapour deposition, sputtering method etc..Then, by applying magnetic
Field, while being heat-treated, obtains exchange coupling magnetic field, ferromagnetic between ferromagnetic layer 15 and antiferromagnetism body layer 14
The direction of magnetization of layer 15 is fixed to the direction in magnetic field.
In addition, applying magnetic field while utilizing vacuum vapour deposition, sputtering method etc. from basalis 13 to ferromagnetic layer
In the case that 15 define, if antiferromagnetism body layer 14 is irregular alloy, the direction of magnetization of ferromagnetic layer 15 is passed through
Exchange coupling magnetic field between ferromagnetic layer 15 and antiferromagnetism body layer 14 is fixed to the direction in magnetic field, so not needing to use
In the heat treatment making spin-exchange-coupled produce.Additionally, for the exchange coupling magnetic field obtaining enough sizes, duplexer can be being formed
After 12, with formed in apply magnetic field identical direction on apply magnetic field, one side implement heat treatment.
In the case that antiferromagnetism body layer 14 is regular alloy, after forming duplexer 12, then apply magnetic field
While being heat-treated, thus obtaining exchange coupling magnetic field, ferromagnetism between ferromagnetic layer 15 and antiferromagnetism body layer 14
The direction of magnetization of body layer 15 is fixed to the direction in magnetic field.The magnetic field identical that the direction in applying magnetic field applies in electing as and being formed
Direction is more preferable.
Duplexer 12 is according to the direction of magnetization of ferromagnetic layer 15 and the long side direction of duplexer 12 in the way of 45 ° intersect
It is patterned as rectangular shape.
Fig. 4 is the figure with the relation in magnetic field for the magneto-resistor representing the magnetoresistive element shown in Fig. 1.With reference to Fig. 4, to magnetoresistive element
1 magneto-resistor is illustrated with the relation in magnetic field.
As described above, the direction of detection electric current I flowing and direction of magnetization M of ferromagnetic layer 15 are intersected with 45 °, thus
Obtain the region of good linear response.
In the present embodiment, not by barber-pole stripes electrode be arranged on 15 layers of ferromagnetic layer upper it becomes possible to by ferromagnetism
The direction of magnetization of body layer 15 tilts 45 ° of ground with respect to the direction (direction between beeline connection electrode) of detection electric current flowing
Fixing.Sense magnetic area thereby, it is possible to suppress ferromagnetic layer 15 reduces.
Further, since being not provided with barber-pole stripes electrode, it is possible to preventing the resistance of barber-pole stripes electrode to be added to strong magnetic
The resistance of gonosome layer.These result is that the magnetoresistive element 1 of present embodiment can suppress to feel the minimizing of magnetic area, and improves
Magnetoresistive ratio.
And, ferromagnetic layer 15 is arranged on antiferromagnetism in the way of the interarea entirety covering antiferromagnetism body layer 14
On body layer 14, the direction of magnetization of ferromagnetic layer 15 is fixed to by the exchange coupling magnetic field from antiferromagnetism body layer 14
One direction, it is possible to poling.Thereby, it is possible to suppress Barkhausen noise.
Additionally, the direction of magnetization of ferromagnetic layer 15 is consolidated by the exchange coupling magnetic field from antiferromagnetism body layer 14
It is set to a direction.Therefore, even if applying larger external magnetic field thus the direction of magnetization of ferromagnetic layer 15 rotates, as long as
The disappear direction of magnetization of then ferromagnetic layer 15 of external magnetic field returns to the direction before rotation.Thereby, it is possible to suppress because disturbing magnetic
The fault that place is caused.
(Magnetic Sensor)
Fig. 5 is the top view of the Magnetic Sensor being constituted using the magnetoresistive element shown in multiple Fig. 1.With reference to Fig. 5, to use
The Magnetic Sensor 100 that magnetoresistive element shown in multiple Fig. 1 is constituted illustrates.
As shown in figure 5, Magnetic Sensor 100 to constitute full-bridge circuit by using four magnetoresistive elements 1A, 1B, 1C, 1D and
Setting.One side of magnetoresistive element 1A is electrically connected with the electrode pad P1 for taking out output voltage Vout2 via wiring pattern 3A
Connect.The another side of magnetoresistive element 1A is electrically connected with the electrode pad P3 for applying power source voltage Vcc via wiring pattern 3B.
One side of magnetoresistive element 1D is electrically connected with electrode pad P1 via wiring pattern 3A.The another side of magnetoresistive element 1D is via cloth
Line pattern 3D electrically connects with grounding connection electrode pad P4.
One side of magnetoresistive element 1B is via wiring pattern 3C and the electrode pad P2 electricity for obtaining output voltage Vout1
Connect.The another side of magnetoresistive element 1B is electrically connected with electrode pad P3 via wiring pattern 3B.One side of magnetoresistive element 1C
Electrically connect with electrode pad P2 via wiring pattern 3C.The another side of magnetoresistive element 1C is via wiring pattern 3D and electrode pad
P4 connects.
Magnetoresistive element 1A, 1D are connected in series via wiring pattern 3B, 3A, 3D and electrode pad P3, P1, P4, thus shape
Become the first series circuit (half-bridge circuit).Magnetoresistive element 1B, 1C via wiring pattern 3B, 3C, 3D and electrode pad P3, P2,
P4 is connected in series, thus forming the second series circuit (half-bridge circuit).First series circuit (half-bridge circuit) and the second series connection
Circuit (half-bridge circuit) is connected in parallel via electrode pad P3, P4, thus forming full-bridge circuit.Magnetoresistive element 1A, 1C just have
Output property, magnetoresistive element 1B, 1D have negative output.
If applying power source voltage Vcc between electrode pad P3 and electrode pad P4, from electrode pad P1 and electrode
Pad P2 obtains output voltage Vout2, Vout1 according to magnetic field intensity.Output voltage Vout2, Vout1 are via differential amplifier
(not shown) is by differential amplification.
Constitute bridge circuit by such, the minimizing that can suppress to feel magnetic area, and improve magnetoresistive ratio, and can
Improve the patience of the change to external environment conditions such as temperature.
In addition, in Magnetic Sensor involved by present embodiment, due to being not provided with barber-pole stripes electricity in magnetoresistive element
Pole, so do not produce the machining deviation of barber-pole stripes electrode.Therefore, the deviation of the resistance of magnetoresistive element is less, constitutes full-bridge electricity
In the case of road, easily dimmable bias voltage.
(the first variation of Magnetic Sensor)
Fig. 6 is the top view representing the Magnetic Sensor in the first variation.With reference to Fig. 6, the magnetic in the first variation is passed
Sensor 100A illustrates.
Situation compared with Magnetic Sensor 100 involved by with embodiment 1 for the Magnetic Sensor 100A in first variation
Under, it is configured to what meander-shaped made them electrically connect and constituted in magnetoresistive element 1A, 1B, 1C, 1D by multiple duplexers 12
Different on this point.
Specifically, as shown in fig. 6, being provided with multiple duplexers 12 in each magnetoresistive element 1A, 1B, 1C, 1D, in each magnetic resistance
In element 1A, 1B, 1C, 1D, abreast it is set side by side with multiple duplexers 12 in the way of the direction of magnetization is consistent, and electrode portion
Connect alternating with each other for the end of mutually adjacent duplexer 12.Thus, each magnetoresistive element 1A, 1B, 1C, 1D are formed as tortuous
Shape.
More specifically, each duplexer 12 and by making the rectangle pattern of length of magnetoresistive element 1A, 1B, 1C, 1D
The connection electrode 40 of short rectangle pattern alternately orthogonal connecting, thus being formed as meander-like.
Each of multiple duplexers 12 that magnetoresistive element 1A, 1C are comprised extends in the same direction, and with bearing of trend
The compartment of terrain of the spaced up regulation in orthogonal side is configured.Each edge of multiple duplexers 12 that magnetoresistive element 1B, 1D are comprised
Same direction extends, and is configured in the compartment of terrain of the spaced up regulation in side orthogonal with bearing of trend.Magnetoresistive element 1A, 1C institute
The bearing of trend of multiple duplexers 12 that the bearing of trend of multiple duplexers 12 comprising and magnetoresistive element 1B, 1D are comprised is just
Hand over.
Even if in the case of so constituting, the Magnetic Sensor 100A in the first variation obtains same with Magnetic Sensor 100
Effect.
(embodiment 2)
Fig. 7 is the schematic sectional view of the magnetoresistive element involved by present embodiment.With reference to Fig. 7, to involved by present embodiment
And magnetoresistive element 1E illustrate.
As shown in fig. 7, in the case of compared with magnetoresistive element 1 involved by with embodiment 1 for the magnetoresistive element 1E, also
On this point of possessing exchange coupling magnetic field adjustment layer 16 is different.Other compositions are almost identical.
Exchange coupling magnetic field adjustment layer 16 is arranged between antiferromagnetism body layer 14 and ferromagnetic layer 15, and to anti-strong
Between magnetic layer 14 and ferromagnetic layer 15, the size of produced exchange coupling magnetic field is adjusted.Exchange coupling magnetic field is adjusted
Flood 16 is for example by Co or the ferromagnetic layer that constitutes of the alloy that comprises Co.Preferably exchange coupling magnetic field adjustment layer 16 is to cover
The overall mode of the interarea of antiferromagnetism body layer 14 is arranged on antiferromagnetism body layer 14.
Adjust the size of exchange coupling magnetic field by arranging exchange coupling magnetic field adjustment layer 16, linear response can be adjusted
Region scope.Thereby, it is possible to increase the free degree of the design of input dynamic range.
Produced exchange coupling magnetic field preferably for example between exchange coupling magnetic field adjustment layer 16 and antiferromagnetism body layer 14
Size than on antiferromagnetism body layer 14 directly stacking ferromagnetic layer 15 in the case of antiferromagnetism body layer 14 and ferromagnetism
Between body layer 15, the size of produced exchange coupling magnetic field is big.Now, by arranging exchange coupling magnetic field adjustment layer 16, can
Increase acts on the size of the exchange coupling magnetic field of ferromagnetic layer 15 from antiferromagnetism body layer 14.Thereby, it is possible to expanded linear
The scope in the region of ground response.
In addition, being adjusted by the exchange coupling magnetic field that the ferromagnetic layer that the alloy arranging by Co or comprise Co is constituted is formed
Flood 16, is prevented from the Mn that antiferromagnetism body layer 14 comprised and is diffused into ferromagnetic layer 15.Thereby, it is possible to suppress with expansion
The penalty dissipating and producing, stability of characteristics, and improve reliability.
As a result, the magnetoresistive element 1E acquisition involved by present embodiment is equal with the magnetoresistive element involved by embodiment 1
Above effect.
(confirmatory experiment)
Herein, preparation possesses the Magnetic Sensor of the magnetoresistive element involved by comparative example.Fig. 8 possesses involved by comparative example
The top view of the Magnetic Sensor of magnetoresistive element.By possessing spiral shell magnetoresistive element disclosed in as non-patent literature 1 for the Magnetic Sensor X
Magnetoresistive element 1AX, 1BX, 1CX, 1DX of rotation stripe electrode 17 are constituted.
Specifically, as shown in figure 8, Magnetic Sensor X is in the same manner as Magnetic Sensor 100, by using four magnetoresistive elements
1AX, 1BX, 1CX, 1DX are arranged to constitute full-bridge circuit.One side of magnetoresistive element 1AX via wiring pattern 3AX be used for
Obtain the electrode pad P1X electrical connection of output voltage Vout2X.The another side of magnetoresistive element 1AX via wiring pattern 3BX with
Electrode pad P3X for applying power source voltage Vcc electrically connects.One side of magnetoresistive element 1DX is via wiring pattern 3AX and electricity
Pole pad P1X electrically connects.The another side of magnetoresistive element 1DX is via wiring pattern 3DX with the electrode pad P4X with grounding connection
Electrical connection.
One side of magnetoresistive element 1BX is via wiring pattern 3CX and for obtaining the electrode pad of output voltage Vout1X
P2X electrically connects.The another side of magnetoresistive element 1BX is electrically connected with electrode pad P3X via wiring pattern 3BX.Magnetoresistive element 1CX
A side electrically connect with electrode pad P2X via wiring pattern 3CX.The another side of magnetoresistive element 1CX is via wiring pattern
3DX is connected with electrode pad P4X.
Magnetoresistive element 1AX, 1CX have positive output, and magnetoresistive element 1BX, 1DX have negative output.
If applying power source voltage Vcc between electrode pad P3X and electrode pad P4X, from electrode pad P1X and electricity
Pole pad P2X obtains output voltage Vout2X, Vout1X according to magnetic field intensity.Output voltage Vout2X, Vout1X are via differential
Amplifier (not shown) is by differential amplification.
Magnetic Sensor X involved by Magnetic Sensor involved by swapping embodiments 1 and comparative example, and to confirmatory experiment
Condition and result illustrate.Magnetic Sensor involved by embodiment 1 uses the Magnetic Sensor involved by embodiment 1
100.
In the magnetoresistive element of the Magnetic Sensor constituting involved by embodiment 1, as duplexer 12, using from substrate 10 side
Play the duplexer (Si/SiO being in turn laminated by the order of basalis, antiferromagnetism body layer, ferromagnetic layer2/Ta/
Ni-Fe/Ni-Mn/Ni-Fe).Additionally, above-mentioned Si/SiO2It is substrate and insulating barrier, be not included in duplexer.?
In embodiment 1, use the stacked film of the alloy that stacking comprises Ni and Fe on Ta film as basalis 13.As anti-strong
Magnetic layer 14 and using comprising the alloy of Ni and Mn.Use the alloy comprising Ni and Fe as ferromagnetic layer 15.In base
In bottom 13, the thickness of Ta film is 2nm, and the thickness of the alloy-layer comprising Ni and Fe is 5nm.In antiferromagnetism body layer 14, bag
The thickness of the alloy-layer containing Ni and Mn is 40nm.Thickness as the alloy-layer comprising Ni and Fe of ferromagnetic layer 15 is
30nm.Additionally, in embodiment 1, duplexer 12 is not provided with protective layer.
The magnetoresistive element constituting the Magnetic Sensor involved by comparative example possesses the magnetic biography having and constituting involved by embodiment 1
Duplexer (the Si/SiO of the magnetoresistive element identical structure of sensor2/ Ta/Ni-Fe/Ni-Mn/Ni-Fe).Additionally, each layer
Thickness is also identical.
Fig. 9 is the figure with the relation in magnetic field for the bridge voltage rate of change representing the Magnetic Sensor involved by embodiment 1.Figure 10 is
Represent the figure of the bridge voltage rate of change of Magnetic Sensor involved by comparative example and the relation in magnetic field.
As shown in Figure 10, the Magnetic Sensor involved by comparative example possesses barber-pole stripes electrode, so bridge voltage rate of change shows
Linear is shown.On the other hand, as shown in figure 9, Magnetic Sensor involved by embodiment 1 also bridge voltage rate of change show linear
Property.
Confirmatory experiment experimentally also demonstrated that by with the magnetization side of ferromagnetic layer 15 as a result, it is possible to say according to above
To M with intersected by the direction between beeline connection electrode portion 18 in the way of set the direction of magnetization of ferromagnetic layer 15 and with
Direction between short distance connection electrode portion 18, even if being not provided with barber-pole stripes electrode, also by the characteristic odd number function of AMR element
Change, the magneto-resistor change enabling to AMR element responds to external magnetic field lines shape.
(embodiment 3)
(current sensor)
Figure 11 is the schematic diagram representing the current sensor involved by present embodiment.With reference to Figure 11, to present embodiment
Involved current sensor illustrates.Due to above-mentioned Magnetic Sensor have throughout relatively wide scope linear respond
Region, so current sensor etc. can be used in the case of measuring stronger magnetic field because of not magnetic saturation.
As shown in figure 11, the current sensor 150 involved by present embodiment possesses Magnetic Sensor 100A, 100B, measurement
The bus 110 of the electric current flowing of object and subtracter 130.Magnetic Sensor 100A, 100B have with involved by embodiment 1
The same structure of Magnetic Sensor 100, has odd function input-output characteristic.
Magnetic Sensor 100A, 100B are examined to the intensity in the magnetic field being produced by the electric current of flowing in bus 110
Survey, and export signal corresponding with the intensity in this magnetic field from above-mentioned bridge circuit.Subtracter 130 is by deducting Magnetic Sensor
The calculating part to calculate the value of above-mentioned electric current for each detected value of 100A and Magnetic Sensor 100B.
Bus 110 includes the first bus wire portion 111, the second bus wire portion and the triple bus-bar portion 113 being electrically connected in series.First
Bus wire portion 111 and triple bus-bar portion 113 are separated from each other and extend parallel to.First bus wire portion 111 and triple bus-bar portion 113 pass through
Second bus wire portion connects.
Second bus wire portion includes each interval with respect to the first bus wire portion 111 and triple bus-bar portion 113 and puts down
The parallel portion 112 arranging capablely and extending.In addition, the second bus wire portion include will the other end of the first bus wire portion 111 and second female
The first linking part 114 that one end of the parallel portion 112 in line portion links and by the other end of the parallel portion 112 of the second bus wire portion and
The second linking part 115 that the one end in triple bus-bar portion 113 links.
First bus wire portion 111, the parallel portion 112 of the second bus wire portion, triple bus-bar portion 113 are equally spaced configured.First
Bus wire portion 111, the parallel portion 112 of the second bus wire portion and triple bus-bar portion 113 are respectively provided with rectangular-shaped shape.But,
Each shape of the first bus wire portion 111, the parallel portion 112 of the second bus wire portion and triple bus-bar portion 113 is not limited to rectangular
Body shape, for example, can also be cylindric.
First linking part 114 side-looking of the second bus wire portion linearly extend and with the first bus wire portion 111 and second
Each of the parallel portion 112 of bus wire portion is orthogonal.Second linking part 115 side-looking of the second bus wire portion linearly extends and with
Each of the parallel portion 112 of two bus wire portions and triple bus-bar portion 113 is orthogonal.
Each of first linking part 114 of the second bus wire portion and the second linking part 115 has rectangular-shaped shape.But
It is that the first linking part 114 of the second bus wire portion and each shape of the second linking part 115 are not limited to rectangular-shaped, example
As being cylindric.
Bus 110 side-looking has the shape of S shape.By a bus part structure so with the shape that tortuous one-tenth turns back
Become bus 110, be obtained in that the intensity of machinery is high, bus 110 that is having symmetrical shape.But, the shape of bus 110 is not
It is limited to this, as long as example bus 110 has the first bus wire portion 111, the second bus wire portion, triple bus-bar portion as E word shape
113 shape then can properly select.
Bus 110 is for example made up of aluminium.But, the material of bus 110 is not limited to the metal such as this or silver, copper
Monomer, or the alloy of these metals and other metals.In addition, bus 110 can be carried out surface treatment.In bus 110
Surface form the coating being for example made up of of individual layer or multilayer the metallic monomer such as nickel, tin, silver, copper or these alloys.
Bus 110 is formed by carrying out punch process to thin plate.But, the forming method of bus 110 is not limited to this,
Bus 110 can be formed using methods such as cutting, casting or forgings.
Direction 215 phase of electric current flowing in the direction 211 of electric current flowing and triple bus-bar portion 113 in first bus wire portion 111
With.The direction 215 and second of electric current flowing in the direction 211 of electric current flowing and triple bus-bar portion 113 in first bus wire portion 111
In the parallel portion 112 of bus wire portion, the direction 213 of electric current flowing is contrary.Electric current flowing in first linking part 114 of the second bus wire portion
Direction 212 identical with the direction 214 of electric current flowing in the second linking part 115 of the second bus wire portion.
Magnetic Sensor 100A is located between the first mutually opposing bus wire portion 111 and the parallel portion 112 of the second bus wire portion.Magnetic
Sensor 100B is located between the mutually opposing parallel portion 112 of the second bus wire portion and triple bus-bar portion 113.
Magnetic Sensor 100A in the orthogonal direction in direction with the first bus wire portion 111 and triple bus-bar portion 113 arrangement and with
On the direction shown in arrow 101A in the orthogonal direction of the bearing of trend of the first bus wire portion 111 that is, Figure 11, there is detection axle.
Magnetic Sensor 100B in the orthogonal direction in direction with the first bus wire portion 111 and triple bus-bar portion 113 arrangement and with
On the direction shown in arrow 101B in the orthogonal direction of the bearing of trend in triple bus-bar portion 113 that is, Figure 11, there is detection axle.
Magnetic Sensor 100A, 100B have in the case of detecting towards the magnetic field in a direction of detection axle with positive value
Export and with negative value output, odd function in the case of detecting the magnetic field in a direction in opposite direction of direction and detection axle
Input-output characteristic.That is, the intensity in the magnetic field electric current due to flowing in bus 110 being produced, Magnetic Sensor 100A's
The phase place of detected value is mutually anti-phase with the phase place of the detected value of Magnetic Sensor 100B.
Magnetic Sensor 100A is electrically connected with subtracter 130 by the first connecting wiring 141.Magnetic Sensor 100B passes through second
Connecting wiring 142 is electrically connected with subtracter 130.
The detected value of detected value and Magnetic Sensor 100B by deducting Magnetic Sensor 100A for the subtracter 130 calculates bus
The value of the electric current of flowing in 110.Additionally, in the present embodiment, use subtracter 130 as calculating part, but calculating part is simultaneously
Not limited to this or differential amplifier etc..
Figure 12 is to schematically show the sectional view that the XII-XII line direction of arrow shown in from Figure 11 is observed to be produced
Magnetic field figure.In fig. 12, the detection of Magnetic Sensor 100A and Magnetic Sensor 100B is axially expressed as X-direction, by
The direction of one bus wire portion 111, the parallel portion 112 of the second bus wire portion and triple bus-bar portion 113 arrangement is expressed as Y-direction.Additionally, the
The bearing of trend of the parallel portion 112 of two bus wire portions is Z-direction.
As shown in figure 12, flowed in the first bus wire portion 111 by electric current, produced according to so-called right-hand rule
Magnetic field 111e along the dextrorotation cincture of in figure.Similarly, flowed in the parallel portion 112 of the second bus wire portion by electric current, produce
Magnetic field 112e along the left-handed cincture of in figure.Flowed in triple bus-bar portion 113 by electric current, produce the dextrorotation cincture along in figure
Magnetic field 113e.
Result is, in Magnetic Sensor 100A, shown in arrow 101A detection axle direction on be applied in figure towards a left side
Magnetic field.On the other hand, in Magnetic Sensor 100B, shown in arrow 101B detection axle direction on be applied in figure towards the right side
Magnetic field.
Therefore, if the intensity in the magnetic field that Magnetic Sensor 100A is detected is set to positive value, Magnetic Sensor 100B detects
The intensity in the magnetic field going out becomes negative value.The detected value of the detected value of Magnetic Sensor 100A and Magnetic Sensor 100B is sent to and subtracts
Musical instruments used in a Buddhist or Taoist mass 130.
Subtracter 130 deducts the detected value of Magnetic Sensor 100B from the detected value of Magnetic Sensor 100A.Result is so that magnetic is passed
The absolute value of the detected value of sensor 100A is added with the absolute value of the detected value of Magnetic Sensor 100B.Counted according to this addition result
Calculate the value of the electric current flowing through in bus 110.
In addition it is also possible to become mutually contrary by making the input-output characteristic of Magnetic Sensor 100A and Magnetic Sensor 100B
Polarity, and replace subtracter 130 and adder or summing amplifier be used as calculating part.
In the current sensor 150 of present embodiment, the first bus wire portion 111 and triple bus-bar portion 113 are in cross section
In be located at centered on the central point of the parallel portion 112 of the second bus wire portion mutually point-symmetric position.And, the first bus wire portion
111 and triple bus-bar portion 113 in cross section be located at Magnetic Sensor 100A and Magnetic Sensor 100B detection axle side
The mutual symmetrical position of line centered on the center line of parallel portion 112 of the second bus wire portion upwards.
In addition, Magnetic Sensor 100A and Magnetic Sensor 100B is located at the parallel portion of the second bus wire portion in cross section
Mutually point-symmetric position centered on 112 central point.And, Magnetic Sensor 100A and Magnetic Sensor 100B is in cross section
In be located at the parallel portion 112 of the second bus wire portion on the direction of the detection axle of Magnetic Sensor 100A and Magnetic Sensor 100B
The mutual symmetrical position of line centered on center line.
The Magnetic Sensor 100A being so configured and Magnetic Sensor 100B point symmetry show comparably reflect by
The electric current of flowing in bus 110 and the detected value in magnetic field that produces.Therefore, it is possible to improve due to the electricity of flowing in bus 110
Stream and in the intensity in magnetic field producing and the bus 110 being calculated according to the intensity in magnetic field the value of electric current of flowing linear.
Additionally, in the present embodiment, exemplify the Magnetic Sensor that current sensor 150 possesses by embodiment 1 institute
The situation that the magnetoresistive element that is related to is constituted is being illustrated, but is not limited thereto it is also possible to involved by embodiment 2
Magnetoresistive element is constituted.In addition, the Magnetic Sensor involved by present embodiment can be same with the Magnetic Sensor in the first variation
Ground is constituted.And, the Magnetic Sensor involved by present embodiment can also be sensed with the magnetic involved by embodiment 3 described later
Magnetic Sensor in Magnetic Sensor in device, the second variation, the 3rd variation, the Magnetic Sensor in the 4th variation and
Any one of Magnetic Sensor in 5th variation is similarly constituted.
By constituting as described above, the current sensor 150 involved by present embodiment can suppress to feel magnetic area
Reduce, and improve magnetoresistive ratio.
(embodiment 4)
(magnetoresistive element)
Figure 13 is the schematic sectional view of the magnetoresistive element involved by present embodiment.With reference to Figure 13, to present embodiment
Magnetoresistive element 1E illustrates.
In above-mentioned embodiment 1, the duplexer exemplifying the top being arranged on substrate 10 is by from substrate 10 side
To be illustrated by the situation that the order of antiferromagnetism body layer 14 and ferromagnetic layer 15 is laminated and constitutes successively, but not limit
In this, as shown in figure 13, from substrate 10 side, ferromagnetic layer 15 and antiferromagnetism body layer 14 can be folded according to this concordant and
Constitute.That is, a side of ferromagnetic layer 15 and antiferromagnetism body layer 14 is arranged on ferromagnetic layer 15 and antiferromagnetism
The opposing party of body layer 14 is above so that the interarea covering the opposing party of ferromagnetic layer 15 and antiferromagnetism body layer 14 is overall.
Basalis 13 in present embodiment is in order that the crystallization of ferromagnetic layer 15 and antiferromagnetism body layer 14 is fitted
Locality grows and arranges.Additionally, for basalis 13, do not using basalis 13 and ferromagnetic layer 15 and anti-can be made
In the case that the crystallization of ferromagnetic layer 14 suitably grows, basalis 13 can be omitted.In the case of omitting basalis 13,
The structure of magnetoresistive element 1E can be simplified.
In the present embodiment, ferromagnetic layer 15 suitably grows as the crystallization for making antiferromagnetism body layer 14
Basalis plays a role.
Even if in the case of constituting as described above, the magnetoresistive element 1E involved by present embodiment obtains and embodiment party
The almost identical effect of formula 1.
(embodiment 5)
(magnetoresistive element)
Figure 14 is the top view of the magnetoresistive element involved by present embodiment.Figure 15 is the XV-XV line shown in along Figure 14
Sectional view.Additionally, in fig. 14, omit protective layer 19 for convenience of description.With reference to Figure 14 and Figure 15, to this embodiment party
Magnetoresistive element 1F involved by formula illustrates.
As shown in Figure 14 and Figure 15, in the case that magnetoresistive element 1F is compared with the magnetoresistive element 1 of embodiment 1,
Different on the point that multiple duplexers 12 and multiple electrodes portion are alternately arranged in specified directions and constitute.Other structures are several
Identical.
Magnetoresistive element 1F includes multiple duplexers 12 and multiple electrodes portion.Multiple duplexers 12 are arranged on insulating barrier 11
On.Additionally, in the case that substrate 10 is insulative substrate, it is convenient to omit insulating barrier 11.
Multiple duplexers 12 have the rectangle shape possessing mutually opposing 2 group opposite side from stacked direction in the case of observing
Shape.Multiple duplexers 12 be separated from each other be arranged to ferromagnetic layer 15 direction of magnetization M consistent.Direction of magnetization M is arranged in electrode portion
Intersect on the direction of row.
The direction that multiple duplexers 12 extend along one group of opposite side in above-mentioned 2 groups of opposite side is linearly set up in parallel.
Each of multiple duplexers 12 has one end 12a and the other end on the direction that one group of opposite side in above-mentioned 2 groups of opposite side extends
12b.
Multiple duplexers 12 pass through the direction of magnetization to the ferromagnetic film becoming ferromagnetic layer 15 and pass through spin-exchange-coupled
The laminate film that magnetic field is fixed to the direction of regulation is patterned and is formed.
Laminate film is by will become basalis 13 using vacuum vapour deposition, sputtering method etc. in the same manner as embodiment 1
Basilar memebrane, become antiferromagnetism body layer 14 antiferromagnetism body film and become ferromagnetic layer 15 ferromagnetic film layer fold and
Formed.In the same manner as embodiment 1, apply magnetic field forming layer stack film, or after forming laminate film more on one side
Laminate film is applied with magnetic field while being heat-treated, thus by produced between ferromagnetic film and antiferromagnetism body film
Exchange coupling magnetic field is fixing the direction of magnetization of ferromagnetic film.
Mutually adjacent duplexer 12 is connected by the connection electrode 41 as electrode portion.Connection electrode 41 will be mutually adjacent
One of duplexer 12 one end 12a side of duplexer and another duplexer towards this one end 12a side other end 12b
Side couples together.Connection electrode 41 is configured to enter the gap between mutually adjacent duplexer 12.
The side of the multiple duplexer of width ratio 12 arrangement of connection electrode 41 on the direction of preferably multiple duplexer 12 arrangements
The width of electrode portion 18 upwards is little.
Duplexer 12 at two ends in multiple duplexers 12, being located on the direction that they arrange is respectively arranged with electrode
Portion 18.Electrode portion 18a of the side in direction of multiple duplexer 12 arrangements is arranged on a duplexer positioned at above-mentioned two ends
12 one end 12a side.Electrode portion 18b of the opposite side in direction of multiple duplexer 12 arrangements is arranged on positioned at above-mentioned two ends
The other end 12b side of another duplexer 12.
Protective layer 19 is arranged to cover multiple duplexers 12, multiple connection electrode 41 and a pair of electrodes portion 18.Protecting
Sheath 19 is provided with contact hole 19a so that the part in a pair of electrodes portion 18 is exposed respectively.
Even if it is also possible to fix the magnetized side of ferromagnetic layer 15 by exchange coupling magnetic field in the case of so constituting
To.Therefore, because multiple barber-pole stripes electrodes need not be arranged on each duplexer 12, it is possible to preventing barber-pole stripes electrode
Resistance be added to the resistance of ferromagnetic layer 15.Even if result is, the magnetoresistive element 1F involved by present embodiment, also
The minimizing of enough suppression sense magnetic area in the same manner as embodiment 1, and improve magnetoresistive ratio.
In addition, by formed using connection electrode 41 by be separated from each other and arrange by way of linearly arranging many
The composition that individual duplexer 12 connects, compared with the situation of the magnetoresistive element being constituted same length with single duplexer, can
Reduce the impact caused by shape anisotropy described later.Thus, respond magnetoresistive element 1F is to the change in magnetic field linear
The symmetry of this benchmark in region, in the case of on the basis of the value 0 in magnetic field, can be maintained well.
Figure 16 is the figure for illustrating to shape anisotropy.With reference to Figure 16, shape anisotropy is illustrated.
Possess in the case that there is the rectangular shape of short side direction and long side direction in ferromagnetic layer 15, according to shape anisotropy
And the magnetization of ferromagnetic layer 15 is easily towards long side direction.In addition, the length of long side direction is longer, magnetized direction is easier
Towards long side direction.
Therefore, even if in the direction (direction between beeline connection electrode portion) with respect to detection electric current I flowing with θ
In the case that 1 angle secures direction of magnetization M of ferromagnetic layer 15, actual magnetized direction is inclined to close to long side side
To the direction flowed with respect to detection electric current I is fixed with the angle of θ 2.This state with consolidated with the angle of θ 1 from the direction of magnetization
The state being applied with magnetic biasing in the case of fixed state observation is identical.
Figure 17 is to represent that magnetized direction there occurs magneto-resistor and magnetic in the case of change according to shape anisotropy
The figure of the relation of field.In fig. 17, represented with chain-dotted line and be not affected by magneto-resistor in the case of the impact of shape anisotropy
Change, indicated by the solid line affected by shape anisotropy in the case of the changing of magneto-resistor.
As described above it is believed that the shape that tilts of direction of magnetization M fixed due to the impact of shape anisotropy
State is identical with the state being applied with magnetic biasing.In this case, represent the position shown in from chain-dotted line for the line segment of the change of magneto-resistor
Put and move to position shown in solid.The impact of shape anisotropy is stronger, and part shown in solid is got over to the in figure direction of arrow
Significantly move.On the other hand, the impact of shape anisotropy is weaker, and part shown in solid is got over less to the in figure direction of arrow
Ground is mobile.As described above, the length of the bearing of trend of duplexer 12 is more long then stronger for the impact of shape anisotropy.
Magnetoresistive element 1F involved by as present embodiment, by becoming, multiple duplexers 12 are separated from each other in straight
Linearly configure, and the composition they being connected using connection electrode 41, constitute same length with by single duplexer
Compare in the case of magnetoresistive element, the length of the bearing of trend of each duplexer 12 can be shortened.Thus, magnetoresistive element 1F is overall
The impact of shape anisotropy can be reduced.
By reducing the impact caused by shape anisotropy, in fig. 17, the change representing magneto-resistor can be reduced
Line segment is to the movement of the in figure direction of arrow.Thus, in magnetoresistive element 1F, (magnetic is represented to linear the region responding of change in magnetic field
The part linearly extending in the line segment of the change of resistance) in, on the basis of the value 0 in magnetic field in the case of, Neng Gouliang
Maintain well the symmetry of this benchmark.And, become big in the case that stacked direction is observed by the shape making duplexer 12
Cause square shape, above-mentioned symmetry can be maintained better.
(Magnetic Sensor)
Figure 18 is the top view of the Magnetic Sensor being constituted using the magnetoresistive element shown in multiple Figure 14.With reference to Figure 18, right
Illustrated using the Magnetic Sensor 100F1 that the magnetoresistive element 1F shown in Figure 14 is constituted.
As shown in figure 18, Magnetic Sensor 100F1 to constitute full-bridge by using four magnetoresistive elements 1F1,1F2,1F3,1F4
Circuit and arrange.
The structure of magnetoresistive element 1F1,1F2,1F3,1F4 is almost identical with the structure of the magnetoresistive element 1F of embodiment 5.Magnetic
Direction of magnetization M of the ferromagnetic layer 15 that resistance element 1F1,1F2,1F3,1F4 are comprised is all towards identical direction.
The direction of multiple duplexers 12 arrangement that magnetoresistive element 1F1,1F3 are comprised is same direction.For example, magnetoresistive element
The direction that one group of opposite side in 2 groups of opposite side that multiple duplexers 12 that 1F1,1F3 are comprised have along duplexer 12 extends is in
Linearly arrange.
The direction that multiple duplexers 12 that magnetoresistive element 1F2,1F4 are comprised shoot is same direction.Such as magnetoresistive element
The direction that another group of opposite side in 2 groups of opposite side that multiple duplexers 12 that 1F2,1F4 are comprised have along duplexer 12 extends
Linearly arrange.
The direction of multiple duplexers 12 arrangement that magnetoresistive element 1F1,1F3 are comprised and magnetoresistive element 1F2,1F4 are comprised
Multiple duplexers 12 arrangement direction orthogonal.
One side of magnetoresistive element 1F1 is via wiring pattern 3A and for obtaining the electrode pad P1 of output voltage Vout2
Electrical connection.The another side of magnetoresistive element 1F1 is via wiring pattern 3B and the electrode pad P3 electricity for applying power source voltage Vcc
Connect.One side of magnetoresistive element 1F4 is electrically connected with electrode pad P1 via wiring pattern 3A.The other end of magnetoresistive element 1F4
Side electrically connects with the electrode pad P4 of grounding connection via wiring pattern 3D.
One side of magnetoresistive element 1F2 is via wiring pattern 3C and for obtaining the electrode pad P2 of output voltage Vout1
Electrical connection.The another side of magnetoresistive element 1F2 is electrically connected with electrode pad P3 via wiring pattern 3B.The one of magnetoresistive element 1F3
Side is electrically connected with electrode pad P2 via wiring pattern 3C.The another side of magnetoresistive element 1C is via wiring pattern 3D and electrode
Pad P4 connects.
Magnetoresistive element 1F1,1F4 are connected in series via wiring pattern 3B, 3A, 3D and electrode pad P3, P1, P4, thus
Form the first series circuit (half-bridge circuit).Magnetoresistive element 1F2,1F3 via wiring pattern 3B, 3C, 3D and electrode pad P3,
P2, P4 are connected in series, thus forming the second series circuit (half-bridge circuit).First series circuit (half-bridge circuit) and the second string
Connection circuit (half-bridge circuit) is connected in parallel via electrode pad P3, P4, thus forming full-bridge circuit.Magnetoresistive element 1F1,1F3 have
There is positive output, magnetoresistive element 1F2,1F4 have negative output.
If applying power source voltage Vcc between electrode pad P3 and electrode pad P4, from electrode pad P1 and electrode
Pad P2, obtains output voltage Vout2, Vout1 according to magnetic field intensity.Output voltage Vout2, Vout1 are via differential amplifier
(not shown) is by differential amplification.
So, in the Magnetic Sensor 100F1 involved by present embodiment, by using not possessing barber-pole stripes electrode
Magnetoresistive element 1F1,1F2,1F3,1F4, to constitute bridge circuit, can suppress to feel the minimizing of magnetic area, and improve magneto-resistor change
Rate.In addition, it is possible to increase the patience to the change of the external environment conditions such as temperature.
Further, since being not provided with barber-pole stripes electrode in magnetoresistive element 1F1,1F2,1F3,1F4, so spiral shell will not be produced
The machining deviation of rotation stripe electrode.Therefore, the deviation in the resistance of magnetoresistive element less, constitute full-bridge circuit in the case of, hold
Easily adjust bias voltage.
And, by becoming as described above in each magnetoresistive element 1F1,1F2,1F3,1F4, it is separated from each other linearly
Ground configures multiple duplexers 12, and the composition being connected them using connection electrode 41, same with being made up of single duplexer
The situation of the magnetoresistive element of length compare, the length of the bearing of trend of each duplexer 12 can be shortened.Thus, magnetoresistive element
1F1,1F2,1F3,1F4 integrally can reduce the impact caused by shape anisotropy.Thus, magnetoresistive element 1F1,1F2,
1F3,1F4 in linear the region responding of change in magnetic field, on the basis of the value 0 in magnetic field in the case of, can tie up well
Hold the symmetry of this benchmark.
(the second variation of Magnetic Sensor)
Figure 19 is the top view of the Magnetic Sensor in the second variation.With reference to Figure 19, to the magnetic sensing in the second variation
Device 100F2 illustrates.
As shown in figure 19, involved by the Magnetic Sensor 100F2 in the second variation and embodiment 5 Magnetic Sensor
100F1 is arranged likewise by constituting full-bridge circuit using four magnetoresistive elements 1F11,1F12,1F13,1F14.
In the case of compared with Magnetic Sensor 100F1 involved by with embodiment 5 for the Magnetic Sensor 100F2, magnetoresistive element
The structure of 1F11,1F12,1F13,1F14 is different.
Each magnetoresistive element 1F11,1F12,1F13,1F14 pass through multiple magnet sensing parts 20 of being arranged in parallel and will be mutually adjacent
Multiple connection electrodes 40 of connecting of end of magnet sensing part 20 alternating with each otherly and be formed as meander-like.
Each of multiple magnet sensing parts 20 has the rectangular shape possessing short side direction and long side direction.Connection electrode 40 has
There is the rectangular shape shorter than magnet sensing part 20.Each magnetoresistive element 1F11,1F12,1F13,1F14 are by making the rectangular shape of length
Magnet sensing part 20 and the connection electrode 40 of short rectangular shape alternately orthogonally connect and be formed as meander-like.
Multiple magnet sensing parts 20 that magnetoresistive element 1F11,1F13 are comprised each along same direction extend, and with prolong
The compartment of terrain stretching the spaced up regulation in the orthogonal side in direction is set up in parallel.Multiple sense magnetic that magnetoresistive element 1F12,1F14 are comprised
Each of portion 20 extends along same direction, and sets side by side in the compartment of terrain of the spaced up regulation in side orthogonal with bearing of trend
Put.The bearing of trend of multiple magnet sensing parts 20 that magnetoresistive element 1F11,1F13 are comprised and magnetoresistive element 1F12,1F14 are comprised
The bearing of trend of multiple magnet sensing parts 20 is orthogonal.
Magnet sensing part 20 includes multiple duplexers 12 and multiple connection electrode 41.Multiple duplexers 12 are arranged to separated from each other
Direction of magnetization M of ferromagnetic layer is consistent.The direction that multiple duplexers 12 extend along one group of opposite side in 2 groups of opposite side is linear
It is set up in parallel shape.Connection electrode 41 makes mutually adjacent duplexer 12 electrically connect.
Whole duplexer 12 that magnetoresistive element 1F11,1F12,1F13,1F14 are comprised is configured to direction of magnetization M mono-
Cause.
Even if in the case of such composition, the Magnetic Sensor 100F2 in the second variation also obtains and Magnetic Sensor
The almost identical effect of 100F1.
(embodiment 6)
Figure 20 is the top view of the magnetoresistive element involved by present embodiment.With reference to Figure 20, to involved by present embodiment
Magnetoresistive element 1G illustrate.
As shown in figure 20, the magnetoresistive element 1G involved by the present embodiment and magnetoresistive element 1F involved by embodiment 5
In the case of comparing, multiple duplexers 12 are different with the aligning method in multiple electrodes portion.Other structures are almost identical.
The direction of magnetization that multiple duplexers 12 are arranged to ferromagnetic layer separated from each other is consistent.Multiple duplexers 12 each
Individual have the rectangular shape possessing mutually opposing 2 group opposite side in the case that stacked direction is observed.
Multiple stackings that multiple duplexers 12 and multiple electrodes portion and the magnetoresistive element 1F involved by embodiment 5 comprise
Body 12 and multiple electrodes portion similarly, in the case of observing from the stacked direction of duplexer 12, along in above-mentioned 2 groups of opposite side
The direction that extends of one group of opposite side, electrode portion and duplexer 12 are alternately arranged.Additionally, multiple duplexers 12 are at above-mentioned 2 groups pairs
Arrange with staggering on the direction that another group of opposite side in side extends.
Specifically, the side in the direction that another group of opposite side in above-mentioned 2 groups of opposite side for multiple duplexers 12 extends according to
The spacing of regulation staggers.Furthermore it is preferred that each center of multiple duplexers 12 linearly arranges.
As described above, the magnetoresistive element 1G involved by present embodiment is formed as zigzag manner.Even if constituting such
In the case of it is also possible to fix the direction of magnetization of ferromagnetic layer by exchange coupling magnetic field.Therefore, because need not be at each
Multiple barber-pole stripes electrodes are arranged on duplexer 12, it is possible to preventing the resistance of barber-pole stripes electrode to be added to ferromagnetic layer
Resistance.Result is, it is also possible to suppress sense in the same manner as embodiment 1 in the magnetoresistive element 1G involved by present embodiment
The minimizing of magnetic area, and improve magnetoresistive ratio.
In addition, will be many with arrange by way of being separated from each other along the direction arrangement of regulation using connection electrode 41 by being formed
The composition that individual duplexer 12 connects, compared with the situation of the magnetoresistive element constituting same length with by single duplexer, can
Reduce the impact of above-mentioned shape anisotropy.Thus, in linear the region responding of change to magnetic field for the magnetoresistive element 1G,
The symmetry of this benchmark in the case of on the basis of the value 0 in magnetic field, can be maintained well.And, seeing from stacked direction
In the case of examining the shape of duplexer 12, it is generally square shape, thus, it is possible to maintain above-mentioned symmetry better.
(Magnetic Sensor)
Figure 21 is the top view of the Magnetic Sensor being constituted using the magnetoresistive element shown in multiple Figure 20.With reference to Figure 21, right
The Magnetic Sensor 100G1 being constituted using the magnetoresistive element shown in multiple Figure 20 is illustrated.
As shown in figure 21, Magnetic Sensor 100G1 to constitute full-bridge by using four magnetoresistive elements 1G1,1G2,1G3,1G4
Circuit and arrange.
In the case of compared with Magnetic Sensor 100F1 involved by with embodiment 5 for the Magnetic Sensor 100G1, magnetic resistance unit
The structure of part 1G1,1G2,1G3,1G4 is different.
The structure of magnetoresistive element 1G1,1G2,1G3,1G4 is almost identical with the structure of above-mentioned magnetoresistive element 1G.Magnetoresistive element
Direction of magnetization M of the ferromagnetic layer 15 that 1G1,1G2,1G3,1G4 are comprised is all towards identical direction.
The direction that multiple connection electrodes 42 that magnetoresistive element 1G1,1G3 are comprised extend is same direction.Magnetoresistive element
Multiple connection electrodes 42 that 1G1,1G3 are comprised are along the side orthogonal with the direction that connection electrode 42 and duplexer 12 are alternately arranged
To extension.
The direction that multiple connection electrodes 42 that magnetoresistive element 1G2,1G4 are comprised extend is same direction.Magnetoresistive element
Multiple connection electrodes 42 that 1G2,1G4 are comprised are along the side orthogonal with the direction that connection electrode 42 and duplexer 12 are alternately arranged
To extension.
Direction and magnetoresistive element 1G2,1G4 bag that multiple connection electrodes 42 that magnetoresistive element 1G1,1G3 are comprised extend
The direction that the multiple connection electrodes 42 containing extend is orthogonal.
In this Magnetic Sensor 100G1, magnetoresistive element 1G1,1G3 have positive output, and magnetoresistive element 1G2,1G4 have negative
Output property.If applying power source voltage Vcc between electrode pad P3 and electrode pad P4, from electrode pad P1 and electrode weldering
Disk P2 obtains output voltage Vout2, Vout1 according to magnetic field intensity.Output voltage Vout2, Vout1 are via differential amplifier
(not shown) is by differential amplification.
So, in the Magnetic Sensor 100G1 involved by present embodiment, using the magnetic resistance not possessing barber-pole stripes electrode
Element 1G1,1G2,1G3,1G4, to constitute bridge circuit, thus, it is possible to suppress to feel the minimizing of magnetic area, and improve magneto-resistor change
Rate.In addition, it is possible to increase the patience to the change of the external environment conditions such as temperature.
Further, since being not provided with barber-pole stripes electrode in magnetoresistive element 1G1,1G2,1G3,1G4, so not producing spiral
The machining deviation of stripe electrode.Therefore, the deviation in the resistance of magnetoresistive element less, constitute full-bridge circuit in the case of, easily
Adjust bias voltage.
And, pass through to become as described above in each magnetoresistive element 1G1,1G2,1G3,1G4, will using connection electrode 41
The composition that multiple duplexers 12 of arranging connect in the way of being separated from each other along the direction arrangement of regulation, and by single duplexer
The situation constituting the magnetoresistive element of same length compares, and can reduce the impact of above-mentioned shape anisotropy.Thus, in magnetic
Resistance element 1G in linear the region responding of change in magnetic field, in the case of on the basis of the value 0 in magnetic field, can be well
Maintain the symmetry of this benchmark.
(the 3rd variation of Magnetic Sensor)
Figure 22 is the top view of the Magnetic Sensor in the 3rd variation.With reference to Figure 22, to the magnetic sensing in the 3rd variation
Device 100G2 illustrates.
As shown in figure 22, the Magnetic Sensor 100G2 in the 3rd variation and the Magnetic Sensor involved by embodiment 6
100G1 is arranged likewise by constituting full-bridge circuit using four magnetoresistive elements 1G11,1G12,1G13,1G14.
In the case of compared with Magnetic Sensor 100G1 involved by with embodiment 6 for the Magnetic Sensor 100G2, magnetic resistance unit
The structure of part 1G11,1G12,1G13,1G14 is different.
Each magnetoresistive element 1G11,1G12,1G13,1G14 pass through multiple magnet sensing part 20G of being arranged in parallel with will be mutually mutual
Multiple connection electrodes 40 that the end of adjacent magnet sensing part 20G connects alternating with each otherly and be formed as meander-like.
The multiple duplexers 12 arranging separated from each other are connected into Z by using multiple connection electrodes 42 by magnet sensing part 20G
Word shape and constitute.In magnet sensing part 20G, in 2 groups of opposite side having along this duplexer 12 one group of multiple duplexers 12
It is set up in parallel separated from each other on the direction that the direction that opposite side extends extends and another group of opposite side in above-mentioned 2 groups of opposite side prolongs
The one side side in the direction stretched is arranged by the spacing of regulation with staggering.In magnet sensing part 20G, multiple connection electrodes 42 and multiple stacking
Body 12 is alternately arranged on the direction that the direction extending along one group of opposite side in above-mentioned 2 groups of opposite side extends.
Each of multiple magnet sensing part 20G that magnetoresistive element 1G11,1G13 are comprised is with towards same direction (DR1 direction)
Mode is in that zigzag shape ground extends, and is set up in parallel in the compartment of terrain of the spaced up regulation in side orthogonal with DR1 direction.
Each of multiple magnet sensing part 20G that magnetoresistive element 1G12,1G14 are comprised is with towards same direction DR1 direction)
Mode is in that zigzag manner ground extends, and is set up in parallel in the compartment of terrain of the spaced up regulation in side orthogonal with DR1 direction.
Direction and magnetoresistive element 1G12,1G14 that multiple connection electrodes 42 that magnetoresistive element 1G11,1G13 are comprised extend
The direction that the multiple connection electrodes 42 being comprised extend is orthogonal.
Whole duplexer 12 that magnetoresistive element 1G11,1G12,1G13,1G14 are comprised is configured to direction of magnetization M mono-
Cause.
Even if in the case of such composition, the Magnetic Sensor 100G2 in the 3rd variation also obtains and Magnetic Sensor
The almost identical effect of 100G1.
(the 4th variation of Magnetic Sensor)
Figure 23 is the top view of the Magnetic Sensor in the 4th variation.With reference to Figure 23, to the magnetic sensing in the 4th variation
Device 100H1 illustrates.
As shown in figure 23, the Magnetic Sensor 100H1 in the 4th variation by using four magnetoresistive element 1H1,1H2,
1H3,1H4 are arranged to constitute full-bridge circuit.
In the case of compared with Magnetic Sensor 100 involved by with embodiment 1 for the Magnetic Sensor 100H1, magnetoresistive element
The structure of 1H1,1H2,1H3,1H4 is different.
Duplexer 12H1,12H2,12H3,12H4 that each magnetoresistive element 1H1,1H2,1H3,1H4 are comprised have part 21
With electrode basement portion 22, this part 21 is formed as meander-like so that the direction of magnetization is consistent, and this electrode basement portion 22 is bent with formation
The two ends of the part 21 of folding shape connect.
Duplexer 12H1,12H2,12H3,12H4 pass through the direction of magnetization to the ferromagnetic film becoming ferromagnetic layer 15
The above-mentioned laminate film being fixed to the direction of regulation by exchange coupling magnetic field is patterned and is formed.
The part 21 being formed as meander-like by the multiple wire portion 21a being arranged in parallel and makes mutually adjacent wire portion
Multiple reflex part 21b that the end of 21a connects alternating with each otherly are constituted.
In magnetoresistive element 1H1,1H3, multiple wire portion 21a that duplexer 12 has extend in the same direction.In magnetic resistance
In element 1H2,1H4, multiple wire portion 21a that duplexer 12 has extend in the same direction.
The bearing of trend of wire portion 21a that magnetoresistive element 1H1,1H3 are comprised and the line that magnetoresistive element 1H2,1H4 are comprised
The bearing of trend of shape portion 21a is orthogonal.
Magnetoresistive element 1H1 and magnetoresistive element 1H2 has shared electrode basement portion 22.In magnetoresistive element 1H1 and magnetic resistance unit
Electrode pad for applying wiring pattern 3B and power source voltage Vcc is formed with the shared electrode basement portion 22 of part 1H2
P3.
Magnetoresistive element 1H2 and magnetoresistive element 1H3 has shared electrode basement portion 22.In magnetoresistive element 1H2 and magnetic resistance unit
Electrode pad for obtaining wiring pattern 3C and output voltage Vout1 is formed on the shared electrode basement portion 22 of part 1H3
P2.
Magnetoresistive element 1H3 and magnetoresistive element 1H4 has shared electrode basement portion 22.In magnetoresistive element 1H3 and magnetic resistance unit
Electrode pad P4 with wiring pattern 3D and grounding connection is formed on the shared electrode basement portion 22 of part 1H4.
Magnetoresistive element 1H4 and magnetoresistive element 1H1 has shared electrode basement portion 22.In magnetoresistive element 1H4 and magnetic resistance unit
Electrode pad for obtaining wiring pattern 3A and output voltage Vout2 is formed on the shared electrode basement portion 22 of part 1H1
P1.
In this Magnetic Sensor 100H1, magnetoresistive element 1H1,1H3 have positive output, and magnetoresistive element 1H2,1H4 have negative
Output property.If applying power source voltage Vcc between electrode pad P3 and electrode pad P4, from electrode pad P1 and electrode weldering
Disk P2 obtains output voltage Vout2, Vout1 according to magnetic field intensity.Output voltage Vout2, Vout1 are via differential amplifier (not
Diagram) by differential amplification.
In Magnetic Sensor 100H1 involved by present embodiment, by using not possessing the magnetic resistance of barber-pole stripes electrode
Element 1H1,1H2,1H3,1H4, to constitute bridge circuit, can suppress to feel the minimizing of magnetic area, and improve magnetoresistive ratio, and
And, it is possible to increase the patience to the change of the external environment conditions such as temperature.
Further, since being not provided with barber-pole stripes electrode in magnetoresistive element 1H1,1H2,1H3,1H4, so not producing spiral
The machining deviation of stripe electrode.Therefore, the deviation in the resistance of magnetoresistive element less, constitute full-bridge circuit in the case of, easily
Adjust bias voltage.
In addition, by arrange electrode basement portion 22, and in electrode basement portion 22 formed wiring pattern 3A, 3B, 3C, 3D with
And electrode pad P1, P2, P3, P4, be prevented from wiring pattern 3A and electrode pad P1, wiring pattern 3B and electrode pad P3,
Form step difference respectively in wiring pattern 3C and electrode pad P2 and wiring pattern 3D and electrode pad 4.Thereby, it is possible to anti-
Only wiring pattern 3A, 3B, 3C, 3D and electrode pad P1, P2, P3, P4 broken string, and reliability can be improved.
Further, since each duplexer 12H1,12H2,12H3,12H4 are by being patterned as meander-like and shape by laminate film
Become, so each other magnetoresistive element is formed as meander-like with the end being alternately connected multiple duplexers using connection electrode
Situation compares, and need not arrange connection electrode.Therefore, connection electrode will not break because of the step difference of duplexer.In this point
Above it is also possible to improve the reliability of magnetoresistive element.
(the 5th variation of Magnetic Sensor)
Figure 24 is the top view of the Magnetic Sensor in the 5th variation.With reference to Figure 24, to the magnetic sensing in the 5th variation
Device 100H2 illustrates.
As shown in figure 24, the Magnetic Sensor 100H1 phase in the Magnetic Sensor 100H2 in the 5th variation and the 4th variation
In the case of relatively, on the point of low conductive layer 44 that is respectively arranged with resistance ratio ferromagnetic layer on multiple reflex part 21b
Different.Other structures are almost identical.
In the case of being not provided with conductive layer 44 in each magnetoresistive element 1H1,1H2,1H3,1H4, duplexer 12H1,
In 12H2,12H3,12H4, electric current positioned at wire portion 21a ferromagnetic layer and be located at reflex part 21b ferromagnetic layer this
Both sides are flowed.
The sense of current of flowing and the ferromagnetic being located at reflex part 21b in the ferromagnetic layer of wire portion 21a
In layer, the sense of current of flowing is orthogonal.Therefore, in the case of streaming current in the ferromagnetic layer of reflex part 21b, from
A part for the output generating positioned at the ferromagnetic layer of wire portion 21a is generated from the ferromagnetic layer positioned at reflex part 21b
Output offset.Thus, output voltage Vout2, the Vout1 sometimes obtaining reduces.
In the present embodiment, by by resistance ratio ferromagnetic layer (more specifically the second ferromagnetic layer) low leading
Electric layer 44 is arranged on reflex part 21b (being more specifically located on the second ferromagnetic layer of reflex part 21b), in reflex part
In 21b, electric current flows in conductive layer 44.It is therefore prevented that the one of the output generating from the ferromagnetic layer positioned at wire portion 21a
The output offset that part is generated from the ferromagnetic layer positioned at reflex part 21b.
Magnetic sensing in magnetoresistive element involved by above-mentioned embodiment 5,6, the second variation to the 6th variation
In the duplexer that the magnetoresistive element that device possesses is comprised, exemplify from substrate 10 side successively by antiferromagnetism body layer 14 and strong magnetic
The situation that gonosome layer 15 is laminated according to this order and constitutes to be illustrated, but is not limited to this it is also possible to as embodiment 4
Like that, by ferromagnetic layer 15 and antiferromagnetism body layer 14 being laminated according to this order and being constituted from substrate 10 side.
More than, embodiments of the present invention and embodiment are illustrated, embodiment of disclosure and reality
Apply example and be only illustration at whole aspects, do not provide constraints.The scope of the present invention is illustrated by claims, wants including with right
Ask the whole changes in the impartial meaning of book and scope.
Symbol description
1、1A、1B、1C、1D、1E、1F、1F1、1F2、1F3、1F4、1F11、1F12、1F13、1F14、1G、1G1、1G2、
1G3,1G4,1G11,1G12,1G13,1G14,1H1,1H2,1H3,1H4 ... magnetoresistive element, 3A, 3B, 3C, 3D ... wiring pattern,
10 ... substrates, 11 ... insulating barriers, 12,12H1,12H2,12H3,12H4 ... duplexer, 13 ... basalises, 14 ... antiferromagnetism bodies
Layer, 15 ... ferromagnetic layers, 16 ... exchange coupling magnetic field adjustment layer, 17 ... barber-pole stripes electrodes, 18 ... electrode portions, 19 ... protections
Layer, 19a ... contact hole, 20,20G ... magnet sensing part, 21 ... are formed as the part of meander-like, 21a ... wire portion, 21b ... reflex part,
22 ... electrode basement portions, 40,41,42 ... connection electrodes, 44 ... conductive layers, 100,100A, 100B, 100F1,100F2,100G1,
100G2,100H1,100H2 ... Magnetic Sensor, 110 ... buses, 111 ... first bus wire portions, 111e, 112e, 113e ... magnetic field,
112 ... parallel portion, 113 ... triple bus-bar portions, 114 ... first linking parts, 115 ... second linking parts, 130 ... subtracters, 141 ...
First connecting wiring, 142 ... second connecting wirings, 150 ... current sensors.
Claims (18)
1. a kind of magnetoresistive element, possesses：
Substrate；
It is arranged on top and the duplexer by antiferromagnetism body layer and ferromagnetic layer stackup of described substrate；And
It is arranged on the electrode portion at the two ends of described duplexer,
One side of described ferromagnetic layer and described antiferromagnetism body layer is arranged on described ferromagnetic layer and described anti-
The opposing party of ferromagnetic layer is above to cover the interarea of the opposing party of described ferromagnetic layer and described antiferromagnetism body layer
It is overall,
The institute fixed by the exchange coupling magnetic field producing between described ferromagnetic layer and described antiferromagnetism body layer
State the direction of magnetization of ferromagnetic layer and the direction being connected with beeline between described electrode portion is intersected.
2. magnetoresistive element according to claim 1, wherein,
It is laminated described antiferromagnetism body layer and described ferromagnetic layer in order from described substrate-side in described duplexer.
3. magnetoresistive element according to claim 1, wherein,
It is laminated described ferromagnetic layer and described antiferromagnetism body layer in order from described substrate-side in described duplexer.
4. the magnetoresistive element according to any one in claims 1 to 3, wherein,
The described direction of magnetization of the described ferromagnetic layer fixed by described exchange coupling magnetic field and with beeline even
The angle connecing the direction intersection between described electrode portion is 45 degree.
5. the magnetoresistive element according to any one in Claims 1 to 4, wherein,
Described antiferromagnetism body layer by the element of any one comprising in Ni, Fe, Pd, Pt and Ir and Mn alloy, comprise
The alloy of Pd, Pt and Mn or the alloy comprising Cr, Pt and Mn are constituted.
6. the magnetoresistive element according to any one in Claims 1 to 5, wherein,
Described ferromagnetic layer is made up of the alloy comprising Ni and Fe or the alloy comprising Ni and Co.
7. the magnetoresistive element according to any one in claim 1～6, wherein,
Be also equipped with exchange coupling magnetic field adjustment layer, described exchange coupling magnetic field adjustment layer be arranged on described antiferromagnetism body layer with
Between described ferromagnetic layer, to the exchange coupling magnetic field producing between described antiferromagnetism body layer and described ferromagnetic layer
Size be adjusted.
8. magnetoresistive element according to claim 7, wherein,
Described exchange coupling magnetic field adjustment layer is by Co or the ferromagnetic layer that constitutes of the alloy that comprises Co.
9. the magnetoresistive element according to any one in claim 1～8, wherein,
It is provided with multiple described duplexers,
Each of multiple described duplexers has the rectangle in the case that stacked direction is observed with mutually opposing 2 group opposite side
Shape,
The direction of magnetization that multiple described duplexers are arranged to described ferromagnetic layer separated from each other is consistent,
In the case of observing from described stacked direction, described electrode portion and described duplexer are along in described 2 groups of opposite side
The direction of one group of opposite side extension is alternately arranged.
10. the magnetoresistive element according to any one in claim 1～9, wherein,
Described duplexer has generally square shape from stacked direction in the case of observing.
11. magnetoresistive elements according to claim 9 or 10, wherein,
The direction that multiple described duplexers extend along one group of opposite side in described 2 groups of opposite side is linearly set up in parallel.
12. magnetoresistive elements according to claim 9 or 10, wherein,
Multiple described duplexers are arranged on the direction that another group of opposite side in described 2 groups of opposite side extends with staggering.
13. magnetoresistive elements according to any one in claim 1～8, wherein,
Described duplexer includes that the described direction of magnetization is consistent and part that be formed as meander-like.
14. magnetoresistive elements according to claim 13, wherein,
Described duplexer also includes electrode basement portion, two sides of described electrode basement portion and the part being formed as described meander-like
Connect respectively,
Described electrode portion is arranged in described electrode basement portion.
15. magnetoresistive elements according to claim 13 or 14, wherein,
Be formed as the part of described meander-like by the multiple wire portions being arranged in parallel with by mutually adjacent described wire portion
Multiple reflex parts that end connects alternating with each otherly are constituted,
The low conductive layer of ferromagnetic layer described in resistance ratio is respectively arranged with the plurality of reflex part.
16. magnetoresistive elements according to any one in claim 1～8, wherein,
It is provided with multiple described duplexers,
By being abreast set up in parallel multiple described duplexers so that the direction of magnetization is consistent, and described electrode portion will be mutually adjacent
The end of described duplexer connect, thus being formed as meander-like alternating with each otherly.
A kind of 17. Magnetic Sensors, wherein,
Possesses the arbitrary described magnetoresistive element in claim 1～16.
A kind of 18. current sensors, possess：
The bus of the electric current flowing of measurement object；And
Magnetic Sensor described in claim 17.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-113051 | 2014-05-30 | ||
| JP2014113051 | 2014-05-30 | ||
| PCT/JP2015/065214 WO2015182644A1 (en) | 2014-05-30 | 2015-05-27 | Magnetoresistive element, magnetic sensor and current sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106463612A true CN106463612A (en) | 2017-02-22 |
Family
ID=54698968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580028916.0A Pending CN106463612A (en) | 2014-05-30 | 2015-05-27 | Magnetoresistive element, magnetic sensor and current sensor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6296155B2 (en) |
| CN (1) | CN106463612A (en) |
| WO (1) | WO2015182644A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108267698A (en) * | 2018-01-08 | 2018-07-10 | 上海交通大学 | It is a kind of to improve the method that compound magnetic sensor sensitivity is laminated |
| CN108551339A (en) * | 2017-12-15 | 2018-09-18 | 江苏多维科技有限公司 | Bistable magnetic switch and system based on magnetoresistance |
| CN109752677A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of double bridge formula thin-film magnetoresistive sensor |
| CN110709720A (en) * | 2017-05-23 | 2020-01-17 | Tdk株式会社 | Magnetic sensor |
| CN111433621A (en) * | 2018-01-25 | 2020-07-17 | 株式会社村田制作所 | Magnetic sensor and current sensor |
| CN111433620A (en) * | 2017-12-04 | 2020-07-17 | 株式会社村田制作所 | Magnetic sensor |
| CN111512172A (en) * | 2017-12-26 | 2020-08-07 | 阿尔卑斯阿尔派株式会社 | Magnetic field applying bias film, and magnetic detection element and magnetic detection device using same |
| CN113574694A (en) * | 2019-04-09 | 2021-10-29 | 株式会社村田制作所 | Magnetoresistive element and magnetic sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6569824B2 (en) * | 2016-12-19 | 2019-09-04 | 株式会社村田製作所 | Magnetoresistive element and magnetic sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1146038A (en) * | 1995-08-11 | 1997-03-26 | 富士通株式会社 | Spin valve magneto-resistive effect magnetic head and magnetic disc drive |
| JPH0992907A (en) * | 1995-09-23 | 1997-04-04 | Nec Corp | Magnetoresistance effect device |
| CN1164088A (en) * | 1996-04-26 | 1997-11-05 | 富士通株式会社 | Magnetoresistive transducer, method for forming magnetic film, and magnetic recording/reproducing drive |
| CN1352791A (en) * | 1999-07-05 | 2002-06-05 | 富士通株式会社 | Spin bulb magnetoresistance effect head and compound magnetic head using it and magnetic recording medium drive unit |
| JP2002267692A (en) * | 2001-03-08 | 2002-09-18 | Yazaki Corp | Current sensor |
| CN101150171A (en) * | 2007-11-20 | 2008-03-26 | 北京科技大学 | A multi-layer film material for switching bias magnetic and electric resistance sensor part |
| JP2010080008A (en) * | 2008-09-26 | 2010-04-08 | Fujitsu Ltd | Reproduction magnetic head |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4809109A (en) * | 1988-03-25 | 1989-02-28 | International Business Machines Corporation | Magnetoresistive read transducer and method for making the improved transducer |
| JP2003208707A (en) * | 2002-01-11 | 2003-07-25 | Hitachi Ltd | Magnetic head and magnetic disk device |
| JP5686635B2 (en) * | 2011-03-07 | 2015-03-18 | アルプス電気株式会社 | Magnetic sensor and manufacturing method thereof |
| JP2014089088A (en) * | 2012-10-30 | 2014-05-15 | Alps Electric Co Ltd | Magnetoresistive effect element |
-
2015
- 2015-05-27 WO PCT/JP2015/065214 patent/WO2015182644A1/en active Application Filing
- 2015-05-27 JP JP2016523529A patent/JP6296155B2/en active Active
- 2015-05-27 CN CN201580028916.0A patent/CN106463612A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1146038A (en) * | 1995-08-11 | 1997-03-26 | 富士通株式会社 | Spin valve magneto-resistive effect magnetic head and magnetic disc drive |
| JPH0992907A (en) * | 1995-09-23 | 1997-04-04 | Nec Corp | Magnetoresistance effect device |
| CN1164088A (en) * | 1996-04-26 | 1997-11-05 | 富士通株式会社 | Magnetoresistive transducer, method for forming magnetic film, and magnetic recording/reproducing drive |
| CN1352791A (en) * | 1999-07-05 | 2002-06-05 | 富士通株式会社 | Spin bulb magnetoresistance effect head and compound magnetic head using it and magnetic recording medium drive unit |
| JP2002267692A (en) * | 2001-03-08 | 2002-09-18 | Yazaki Corp | Current sensor |
| CN101150171A (en) * | 2007-11-20 | 2008-03-26 | 北京科技大学 | A multi-layer film material for switching bias magnetic and electric resistance sensor part |
| JP2010080008A (en) * | 2008-09-26 | 2010-04-08 | Fujitsu Ltd | Reproduction magnetic head |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110709720A (en) * | 2017-05-23 | 2020-01-17 | Tdk株式会社 | Magnetic sensor |
| CN110709720B (en) * | 2017-05-23 | 2021-10-29 | Tdk株式会社 | Magnetic sensor |
| CN111433620A (en) * | 2017-12-04 | 2020-07-17 | 株式会社村田制作所 | Magnetic sensor |
| CN111433620B (en) * | 2017-12-04 | 2022-06-28 | 株式会社村田制作所 | Magnetic sensor |
| CN108551339A (en) * | 2017-12-15 | 2018-09-18 | 江苏多维科技有限公司 | Bistable magnetic switch and system based on magnetoresistance |
| CN111512172A (en) * | 2017-12-26 | 2020-08-07 | 阿尔卑斯阿尔派株式会社 | Magnetic field applying bias film, and magnetic detection element and magnetic detection device using same |
| CN111512172B (en) * | 2017-12-26 | 2022-07-26 | 阿尔卑斯阿尔派株式会社 | Magnetic field bias film, and magnetic detection element and magnetic detection device using same |
| CN108267698B (en) * | 2018-01-08 | 2020-07-14 | 上海交通大学 | Method for improving sensitivity of laminated composite magnetic sensor |
| CN108267698A (en) * | 2018-01-08 | 2018-07-10 | 上海交通大学 | It is a kind of to improve the method that compound magnetic sensor sensitivity is laminated |
| CN111433621A (en) * | 2018-01-25 | 2020-07-17 | 株式会社村田制作所 | Magnetic sensor and current sensor |
| CN111433621B (en) * | 2018-01-25 | 2022-03-04 | 株式会社村田制作所 | Magnetic sensor and current sensor |
| CN109752677A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of double bridge formula thin-film magnetoresistive sensor |
| CN113574694A (en) * | 2019-04-09 | 2021-10-29 | 株式会社村田制作所 | Magnetoresistive element and magnetic sensor |
| CN113574694B (en) * | 2019-04-09 | 2024-01-05 | 株式会社村田制作所 | Magneto-resistive element and magnetic sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6296155B2 (en) | 2018-03-20 |
| JPWO2015182644A1 (en) | 2017-04-20 |
| WO2015182644A1 (en) | 2015-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106463612A (en) | Magnetoresistive element, magnetic sensor and current sensor | |
| US7639005B2 (en) | Giant magnetoresistive resistor and sensor apparatus and method | |
| JP5066579B2 (en) | Magnetic sensor and magnetic sensor module | |
| JP5021764B2 (en) | Magnetic sensor | |
| JP2011064653A (en) | Magnetic sensor and method of manufacturing the same | |
| US7834619B2 (en) | Magnetic detection device | |
| WO2019142635A1 (en) | Magnetic detection device and method for manufacturing same | |
| WO2019142634A1 (en) | Magnetic detection device and method for manufacturing same | |
| JP6725667B2 (en) | Exchange coupling film, magnetoresistive effect element and magnetic detection device using the same | |
| WO2019131391A1 (en) | Magnetic field application bias film, and magnetic detection element and magnetic detection device using said film | |
| WO2019035294A1 (en) | Exchange coupled film, magnetic resistance effect element using exchange coupled film, and magnetic detection device using exchange coupled film | |
| US20130057274A1 (en) | Current sensor | |
| JP6951454B2 (en) | Exchange bond film and magnetoresistive element and magnetic detector using this | |
| JP5447616B2 (en) | Manufacturing method of magnetic sensor | |
| WO2019131394A1 (en) | Tunnel magnetoresistive effect film and magnetic device using same | |
| JP6380530B2 (en) | Anisotropic magnetoresistive element, magnetic sensor and current sensor | |
| JP2011027633A (en) | Magnetic sensor and manufacturing method thereof | |
| JP2003179283A (en) | Magnetic sensor | |
| JP6039697B2 (en) | Giant magnetoresistive effect element and current sensor using the same | |
| JP6725300B2 (en) | Magnetic sensor and manufacturing method thereof | |
| US20120032673A1 (en) | Magnetic sensor | |
| US9817086B2 (en) | CPP-GMR sensor for electronic compass | |
| JP6204391B2 (en) | Magnetic sensor and current sensor | |
| JPH08130338A (en) | Thin film magnetic sensor | |
| JP6713867B2 (en) | Method for manufacturing dual spin valve magnetic sensor and method for manufacturing magnetic sensor using dual spin valve magnetic sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170222 |
|
| WD01 | Invention patent application deemed withdrawn after publication |