CN101150171A - A multi-layer film material for switching bias magnetic and electric resistance sensor part - Google Patents
A multi-layer film material for switching bias magnetic and electric resistance sensor part Download PDFInfo
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- CN101150171A CN101150171A CNA2007101777099A CN200710177709A CN101150171A CN 101150171 A CN101150171 A CN 101150171A CN A2007101777099 A CNA2007101777099 A CN A2007101777099A CN 200710177709 A CN200710177709 A CN 200710177709A CN 101150171 A CN101150171 A CN 101150171A
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Abstract
This invention provides a multi-layer membrane material used in exchanged offset magnetic-resistance sensor elements, in which, a Ta/NiCo/Ta multi-layer membrane is plugged with a FeMn layer to prepare a Ta/NiCo/FeMn/Ta multi-layer membrane material and the sensor element is composed of the Ta/NiCo/FeMn/Ta multi-layer membrane structure elements and Au electrode layer, the composition of NiCo alloy is Ni65Co35 and that of the FeMn alloy is Fe50Mn50 and a ferromagnetic alloy, which reduces hysteresis of magnetic-resistance sensor elements by exchanged offset field generated from the NiCo/FeMn interface.
Description
Technical field
The invention belongs to the magnetic resistance sensor technical field, a kind of switching bias magnetic and electric resistance sensor part particularly is provided.
Technical background
(Anisotropic Magnetoresistance AMR) can make magnetic railings ruler displacement transducer, the sub-compass of magnetoelectricity, velocity transducer, current sensor or the like to utilize anisotropic-magnetoresistance effect.The AMR transducer can be used for noncontacting measurement, and response speed is fast, power consumption is little, temperature stability is good etc.
AMR transducer commonly used at present mainly is the Ta/NiFe/Ta film, and its advantage is highly sensitive, and shortcoming is that magneto-resistor ratio (3%) and saturation field (10Oe) are all less, is unsuitable for using down in higher magnetic field (100-200Oe).And the Ta/NiCo/Ta thin-film material among the present invention has high magneto-resistor ratio (4.6%) and big saturation field (40Oe), can remedy deficiency (Zhang Hui, Teng Jiao, the Ma Jidong of Ta/NiFe/Ta thin-film material, Yu Guanghua, recklessly strong .Ta seed layer thickness and sputter rate are to Ta/Ni
65Co
35Duplicature anisotropic magnetoresistance and coercitive influence. University of Science ﹠ Technology, Beijing's journal, 2005,27,458-46).Therefore, they are two kinds of AMR materials with different purposes.
For AMR transducer based on the Ta/NiFe/Ta thin-film material, for improving sensor performance, also need the employing measure make element remain single domain state, method mainly contains:
Barber Pole biasing means.The magnetic field of adopting Barber Pole conduction slanted bar to produce keeps single domain state.This method technology is simply effective, and shortcoming is little to short element effect, and the transducer that requires for low-power consumption then can not adopt.Hard Magnetic stationary field method.Place two Hard Magnetic pieces at the element two ends, utilize the magnetic field between these two Hard Magnetic pieces to make element keep the single domain attitude, shortcoming is that the Hard Magnetic piece easily demagnetizes, and complex process, lack the single exposure etching process than Barber Pole biasing means as many as, the magnetic field between the Hard Magnetic piece will be optimized through repeatedly testing.(Mapps?D?J.Magnetoresistivesensors.Sensors?and?Actuators?A，1997，59：9-19)
In the present invention, keep single domain state, only need to insert one deck FeMn film and get final product for making element.Compare with Barber Pole biasing means, the manufacturing process basically identical, but the requirement of technology is reduced; Compare with Hard Magnetic stationary field method, then reduced single exposure etching process and corresponding optimization experiment at least.Therefore, technology is simpler than preceding two kinds of methods.
Summary of the invention
A kind of multi-layer film material that is used for switching bias magnetic and electric resistance sensor part that the objective of the invention is to overcome above shortcoming and provide.
A kind of multi-layer film material that is used for switching bias magnetic and electric resistance sensor part, it is to insert the FeMn layer in the Ta/NiCo/Ta multilayer film to make the Ta/NiCo/FeMn/Ta multi-layer film material.
Further, the above-mentioned multi-layer film material that is used for switching bias magnetic and electric resistance sensor part, the NiCo alloying component is Ni65Co35, thickness is 10-500nm;
A kind of switching bias magnetic and electric resistance sensor part, it comprises above-mentioned multi-layer film material.
At last, above-mentioned switching bias magnetic and electric resistance sensor part, deposit the layer of Au electrode film by magnetron sputtering on described Ta/NiCo/FeMn/Ta multi-layer film structure element, thickness is 10-2000nm, makes the Au electrode layer after optical exposure, ion etching.
Concrete grammar of the present invention is as follows:
Adopt magnetically controlled sputter method on the Si sheet, to prepare the Ta/NiCo/FeMn/Ta multilayer film, make in the preparation process to be cooled with circulating water.Target is Ta, NiCo, FeMn target.During film forming, be parallel to the induced magnetic field that Si sheet surface direction is added with 16kA/m, the Si sheet rotates with 20 revolutions per seconds speed.Base vacuum is better than 5 * 10
-5Pa, sputtering pressure are 0.3Pa.Film thickness is controlled by sputtering time.Sputter rate is 0.10-0.15nm/s.Through gluing, uv-exposure and ion etching, obtain Ta/NiCo/FeMn/Ta multi-layer film structure element.
Also have, adopt magnetically controlled sputter method on Ta/NiCo/FeMn/Ta multi-layer film structure element, to deposit the Au film, make in the preparation process to be cooled with circulating water.Target is the Au target.During film forming, the Si sheet rotates with 20 revolutions per seconds speed.Base vacuum is better than 1 * 10
-4Pa, sputtering pressure are 0.3Pa.Film thickness is controlled by sputtering time.Sputter rate is respectively 0.15nm/s.Through gluing, uv-exposure and ion etching, obtain the Au electrode layer.So far, make magnetic and electric resistance sensor part.
In the present invention, the NiCo alloying component is Ni
65Co
35, thickness is 10-500nm; The FeMn alloying component is Fe
50Mn
50, being the antiferromagnetism alloy, its thickness is 5-200nm, and the Ta layer thickness is 2-10nm, and the Au electrode layers thickness is 10-2000nm.
The present invention inserts the FeMn layer to make the Ta/NiCo/FeMn/Ta multi-layer film material in traditional Ta/NiCo/Ta multilayer film.Adopt the Ta layer to make Seed Layer, can make NiCo have the magnetic property that very strong NiCo (111) texture, big crystallite dimension, high magneto-resistor ratio are become reconciled.On this NiCo layer, deposit the FeMn layer simultaneously, can not influence performance and the micro-structural of NiCo, also can make FeMn layer, and then obtain big exchange bias field with strong FeMn (111) texture.
The invention has the advantages that: output signal is big, and magnetic hysteresis is little, good reproducibility; Heat stability is good; Being fit to higher magnetic field uses; Structure and technology are simple.
Description of drawings
Fig. 1 has provided the structure chart of magnetic and electric resistance sensor part among the present invention, and 1 is the Au electrode layer, at the two ends of magnetic and electric resistance sensor part bar, can connect constant-current source or constant pressure source, and 2 is the Ta layer, and 3 is the FeMn layer, and 4 is the NiCo layer, and 5 is the Ta layer, and 6 is the Si sheet.
Embodiment
Utilize magnetically controlled sputter method to deposit Ta (5nm)/NiCo (20nm)/FeMn (10nm)/Ta (5nm) multilayer film on clean Si substrate, parallel face direction is added with the alignment magnetic field of 16kA/m in the deposition process.Through gluing, uv-exposure and ion etching, obtain Ta/NiCo/FeMn/Ta multilayer film element.The thick Au film of deposition one deck 200nm on Ta/NiCo/FeMn/Ta multilayer film element through gluing, uv-exposure and ion etching, obtains the Au electrode layer then.So far, make switching bias magnetic and electric resistance sensor part.
Claims (4)
1. a multi-layer film material that is used for switching bias magnetic and electric resistance sensor part is characterized in that inserting in the Ta/NiCo/Ta multilayer film FeMn layer and makes the Ta/NiCo/FeMn/Ta multi-layer film material.
2. according to the described a kind of multi-layer film material that is used for switching bias magnetic and electric resistance sensor part of claim 1, it is characterized in that described NiCo alloying component is Ni
65Co
35
3. one kind is used for switching bias magnetic and electric resistance sensor part, it is characterized in that comprising claim 1 or 2 described described multi-layer film materials.
4. according to the described a kind of switching bias magnetic and electric resistance sensor part of claim 3, it is characterized in that: on described Ta/NiCo/FeMn/Ta multi-layer film structure element, deposit the layer of Au electrode film by magnetron sputtering, thickness is 10-2000nm, makes the Au electrode layer after optical exposure, ion etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101777099A CN101150171A (en) | 2007-11-20 | 2007-11-20 | A multi-layer film material for switching bias magnetic and electric resistance sensor part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101777099A CN101150171A (en) | 2007-11-20 | 2007-11-20 | A multi-layer film material for switching bias magnetic and electric resistance sensor part |
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|---|---|
| CN101150171A true CN101150171A (en) | 2008-03-26 |
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| CNA2007101777099A Pending CN101150171A (en) | 2007-11-20 | 2007-11-20 | A multi-layer film material for switching bias magnetic and electric resistance sensor part |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900799A (en) * | 2014-03-04 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | Structural unit with adjustable and controllable exchange bias field, preparation method and adjusting and controlling method thereof |
| CN104900801A (en) * | 2015-04-23 | 2015-09-09 | 美新半导体（无锡）有限公司 | Anti-ferromagnetic pinning AMR (Anisotropic Magneto Resistance) sensor |
| CN106463612A (en) * | 2014-05-30 | 2017-02-22 | 株式会社村田制作所 | Magnetoresistive element, magnetic sensor and current sensor |
| CN108117390A (en) * | 2017-12-29 | 2018-06-05 | 江西理工大学 | Rare Earth Oxides Ceramic Materials with exchange biased reversion and preparation method thereof |
-
2007
- 2007-11-20 CN CNA2007101777099A patent/CN101150171A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900799A (en) * | 2014-03-04 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | Structural unit with adjustable and controllable exchange bias field, preparation method and adjusting and controlling method thereof |
| CN106463612A (en) * | 2014-05-30 | 2017-02-22 | 株式会社村田制作所 | Magnetoresistive element, magnetic sensor and current sensor |
| CN104900801A (en) * | 2015-04-23 | 2015-09-09 | 美新半导体（无锡）有限公司 | Anti-ferromagnetic pinning AMR (Anisotropic Magneto Resistance) sensor |
| CN108117390A (en) * | 2017-12-29 | 2018-06-05 | 江西理工大学 | Rare Earth Oxides Ceramic Materials with exchange biased reversion and preparation method thereof |
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