JPWO2015170425A1 - 周波数可変テラヘルツ発振器及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 44
- 230000005641 tunneling Effects 0.000 claims description 22
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000010355 oscillation Effects 0.000 description 36
- 238000010586 diagram Methods 0.000 description 11
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- 238000000862 absorption spectrum Methods 0.000 description 5
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- 230000005540 biological transmission Effects 0.000 description 1
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- 238000000701 chemical imaging Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/93—Variable capacitance diodes, e.g. varactors
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Abstract
Description
RTD電極を蒸着した後に、硫酸系エッチャントによるウェットエッチングによりRTDメサを作製し、上部電極及び下部電極を形成すると共に、スロットアンテナを形成し
CVD法によりSiO2を全面に堆積し、コンタクトホールを空け、更に前記上部電極とRTD,VDとを接続処理することにより達成される。
2 スロットアンテナ
3 基板
4 下部電極
5 上部電極
10 共鳴トンネルダイオード(RTD)
20 スロットアンテナ
40 バラクタダイオード(VD)
Claims (9)
- スロットアンテナが配置され、前記スロットアンテナに沿って共鳴トンネルダイオード及びバラクタダイオードが並列に配設され、前記共鳴トンネルダイオード及びバラクタダイオードに別々に直流電圧を印加することによりテラヘルツ周波数帯で発振することを特徴とする周波数可変テラヘルツ発振器。
- InP基板上に共鳴トンネルダイオードを構成する半導体多層膜1が配置され、前記半導体多層膜1上にバラクタダイオードを構成する半導体多層膜2が配置されており、前記半導体多層膜1と前記半導体多層膜2の間に、高濃度にドープされたInP層が配置されたことを特徴とする周波数可変テラヘルツ発振器。
- スロットアンテナが配置され、前記スロットアンテナに沿ってAlAs/InGaAsの2重障壁型共鳴トンネルダイオード及びバラクタダイオードが並列に配設され、
前記共鳴トンネルダイオード及びバラクタダイオードのそれぞれに前記スロットアンテナを横切るように給電ラインが配置されてMIMキャパシタが形成され、
前記給電ラインにより、前記共鳴トンネルダイオード及びバラクタダイオードに別々に直流電圧を印加することによりテラヘルツ周波数帯で発振するようになっている請求項1又は2に記載の周波数可変テラヘルツ発振器。 - 前記共鳴トンネルダイオード側の上部電極及び前記MIMキャパシタの間にn型半導体の抵抗体が配置されている請求項1乃至3のいずれかに記載の周波数可変テラヘルツ発振器。
- 前記共鳴トンネルダイオードが、n+InGaAs(5×1019cm−3,100nm)/spacer InGaAs(undoped,12nm)/barrier AlAs(undoped,0.9nm)/well InGaAs(undoped,3nm)/barrier AlAs(undoped,0.9nm)/spacer InAlGaAs(undoped,2nm)/n−InAlGaAs(3×1018cm−3,25nm)/n+InGaAs(5×1019cm−3,400nm)の各層で構成されている請求項1乃至4のいずれかに記載の周波数可変テラヘルツ発振器。
- 前記バラクタダイオードが、p+InGaAs(1×1020cm−3,100nm)/n−InGaAs(6×1016cm−3,400nm)/n+InGaAs(5×1019cm−3,100nm)の3層で構成されている請求項1乃至5のいずれかに記載の周波数可変テラヘルツ発振器。
- 前記MIMキャパシタが、直流で開放、テラヘルツ帯で短絡するようになっている請求項1乃至6のいずれかに記載の周波数可変テラヘルツ発振器。
- 前記バラクタダイオード及び前記共鳴トンネルダイオードの間に、n+InPによるエッチストッパ層が導入されている請求項1乃至7のいずれかに記載の周波数可変テラヘルツ発振器。
- バラクタダイオード電極を蒸着した後、硫酸系のエッチャントを用いたウェットエッチングにより、バラクタダイオードメサを形成し、
バラクタダイオード層の下にあるn+InP層は硫酸系エッチャントではエッチングされず、前記ウェットエッチングは自動的に前記n+InP層で止まり、RTD電極を蒸着した後に、硫酸系エッチャントによるウェットエッチングによりRTDメサを作製し、
上部電極及び下部電極を形成すると共に、スロットアンテナを形成しCVD法によりSiO2を全面に堆積し、コンタクトホールを空け、更に前記上部電極とRTD,VDとを接続処理することを特徴とする周波数可変テラヘルツ発振器の製造方法。
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PCT/JP2014/074158 WO2015170425A1 (ja) | 2014-05-08 | 2014-09-05 | 周波数可変テラへルツ発振器及びその製造方法 |
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JP7039586B2 (ja) * | 2017-06-27 | 2022-03-22 | ローム株式会社 | テラヘルツ素子、半導体装置 |
CN111066239B (zh) * | 2017-08-31 | 2023-11-07 | 罗姆股份有限公司 | 太赫兹波检测器和太赫兹单元 |
KR102489462B1 (ko) * | 2017-12-14 | 2023-01-18 | 현대모비스 주식회사 | 파노라마 루프용 에어백장치 |
US10475983B1 (en) | 2018-08-28 | 2019-11-12 | International Business Machines Corporation | Antenna-based qubit annealing method |
US11050009B2 (en) | 2018-08-28 | 2021-06-29 | International Business Machines Corporation | Methods for annealing qubits with an antenna chip |
US10510943B1 (en) | 2018-08-28 | 2019-12-17 | International Business Machines Corporation | Structure for an antenna chip for qubit annealing |
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JP7088549B2 (ja) | 2018-11-19 | 2022-06-21 | 国立大学法人東京工業大学 | 高出力テラヘルツ発振器 |
JP2020136910A (ja) | 2019-02-20 | 2020-08-31 | キヤノン株式会社 | 発振器、撮像装置 |
KR102262417B1 (ko) * | 2019-05-07 | 2021-06-08 | 광주과학기술원 | 테라헤르츠 변조기, 테라헤르츠 변조기의 사용방법 |
JP7414428B2 (ja) * | 2019-08-26 | 2024-01-16 | キヤノン株式会社 | 発振器、照明装置、撮像装置および装置 |
US11506774B2 (en) | 2019-12-24 | 2022-11-22 | Tokyo Institute Of Technology | Sub-carrier modulated terahertz radar |
US11863125B2 (en) | 2020-02-26 | 2024-01-02 | Tokyo Institute Of Technology | Terahertz oscillator and producing method thereof |
KR102415314B1 (ko) | 2020-02-28 | 2022-07-01 | 한국전자통신연구원 | 테라헤르츠 파 생성 방법 및 이를 수행하는 장치들 |
JP7220333B1 (ja) | 2021-06-18 | 2023-02-09 | 日本碍子株式会社 | テラヘルツ装置用部材 |
CN113571998B (zh) * | 2021-06-24 | 2023-02-14 | 深圳市时代速信科技有限公司 | 一种共振隧穿二极管太赫兹振荡源 |
CN113540807B (zh) * | 2021-06-24 | 2024-04-12 | 深圳市时代速信科技有限公司 | 一种共振隧穿二极管太赫兹振荡器及其电路结构 |
CN113451421A (zh) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | 中心对称双排GaN肖特基二极管 |
CN113451418A (zh) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | 中心对称SiC基GaN肖特基二极管 |
CN113451419A (zh) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | 中心对称双排SiC基GaN肖特基二极管 |
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JP2012090255A (ja) * | 2010-09-22 | 2012-05-10 | Canon Inc | 発振器 |
JP2012160686A (ja) * | 2011-02-03 | 2012-08-23 | Nippon Telegr & Teleph Corp <Ntt> | 共鳴トンネルダイオードおよびテラヘルツ発振器 |
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- 2014-09-05 WO PCT/JP2014/074158 patent/WO2015170425A1/ja active Application Filing
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JP2007124250A (ja) * | 2005-10-27 | 2007-05-17 | Tokyo Institute Of Technology | テラヘルツ発振素子 |
JP2012090255A (ja) * | 2010-09-22 | 2012-05-10 | Canon Inc | 発振器 |
JP2012160686A (ja) * | 2011-02-03 | 2012-08-23 | Nippon Telegr & Teleph Corp <Ntt> | 共鳴トンネルダイオードおよびテラヘルツ発振器 |
JP2013005115A (ja) * | 2011-06-14 | 2013-01-07 | Rohm Co Ltd | 無線伝送装置 |
CN103618148A (zh) * | 2013-11-27 | 2014-03-05 | 天津工业大学 | 一种基于共振隧穿机制的失调馈送缝隙阵列天线 |
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JP6570187B2 (ja) | 2019-09-04 |
WO2015170425A1 (ja) | 2015-11-12 |
US10270390B2 (en) | 2019-04-23 |
KR20170004965A (ko) | 2017-01-11 |
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