JP7088549B2 - 高出力テラヘルツ発振器 - Google Patents
高出力テラヘルツ発振器 Download PDFInfo
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- JP7088549B2 JP7088549B2 JP2018216285A JP2018216285A JP7088549B2 JP 7088549 B2 JP7088549 B2 JP 7088549B2 JP 2018216285 A JP2018216285 A JP 2018216285A JP 2018216285 A JP2018216285 A JP 2018216285A JP 7088549 B2 JP7088549 B2 JP 7088549B2
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1817—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a cavity resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
- H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
- H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
- H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0084—Functional aspects of oscillators dedicated to Terahertz frequencies
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Waveguide Aerials (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
2 スロットアンテナ
3 基板
4 下部電極
5 上部電極
6 安定化抵抗
10 高出力テラヘルツ発振器
11 基板(InP)
12 絶縁体薄膜
20 ボウタイアンテナ
21,22 導体片
30 空洞共振器
31,32 空洞
34 壁部材
35 導体橋
40 共鳴トンネルダイオード(RTD)
50 安定化抵抗
Claims (5)
- 第1の導体片及び第2の導体片で成るボウタイアンテナが基板上に配置され、前記ボウタイアンテナの共振部に2つの空洞を有する空洞共振器が配設され、前記空洞を区画する壁部材の底部に沿って長形状の共鳴トンネルダイオードが配設された構造であり、
前記ボウタイアンテナの前記第1の導体片と前記空洞共振器とが一体的に構成されており、
前記ボウタイアンテナの前記第2の導体片と、前記第1の導体片に連接された前記空洞共振器の側面若しくは上面との間にバイアスをかけることにより、前記共鳴トンネルダイオード、前記ボウタイアンテナ及び前記空洞共振器によりテラヘルツ周波数帯で発振することを特徴とする高出力テラヘルツ発振器。 - 前記共鳴トンネルダイオードの底面が前記第2の導体片の上面に接している請求項1に記載の高出力テラヘルツ発振器。
- 前記ボウタイアンテナの前記第1の導体片及び前記第2の導体片、前記空洞共振器が良導体であり、前記基板が半絶縁性である請求項1又は2に記載の高出力テラヘルツ発振器。
- 前記ボウタイアンテナの前記第1の導体片及び前記第2の導体片の間、前記空洞共振器の底部と前記第2の導体片との間に絶縁体薄膜が配設されている請求項1乃至3のいずれかに記載の高出力テラヘルツ発振器。
- 前記ボウタイアンテナの前記第2の導体片に凹部が形成され、前記空洞共振器から延びた導体橋が前記凹部内の前記基板の上面に接続されると共に、前記導体橋と前記第2の導体片の側面との間に安定化抵抗が接続されている請求項1乃至4のいずれかに記載の高出力テラヘルツ発振器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018216285A JP7088549B2 (ja) | 2018-11-19 | 2018-11-19 | 高出力テラヘルツ発振器 |
PCT/JP2019/045251 WO2020105627A1 (ja) | 2018-11-19 | 2019-11-19 | 高出力テラヘルツ発振器 |
US17/290,811 US11309834B2 (en) | 2018-11-19 | 2019-11-19 | High-power terahertz oscillator |
Applications Claiming Priority (1)
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JP2018216285A JP7088549B2 (ja) | 2018-11-19 | 2018-11-19 | 高出力テラヘルツ発振器 |
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JP2020088466A JP2020088466A (ja) | 2020-06-04 |
JP2020088466A5 JP2020088466A5 (ja) | 2021-12-02 |
JP7088549B2 true JP7088549B2 (ja) | 2022-06-21 |
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US (1) | US11309834B2 (ja) |
JP (1) | JP7088549B2 (ja) |
WO (1) | WO2020105627A1 (ja) |
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CN113571998B (zh) * | 2021-06-24 | 2023-02-14 | 深圳市时代速信科技有限公司 | 一种共振隧穿二极管太赫兹振荡源 |
CN114039201B (zh) * | 2021-11-10 | 2023-11-07 | 中国科学院上海技术物理研究所 | 一种分形蝶形太赫兹天线 |
US20230284925A1 (en) * | 2022-03-09 | 2023-09-14 | National Tsing Hua University | SCANNING BASED THz NEARFIELD IMAGING DEVICE |
WO2023172265A1 (en) * | 2022-03-10 | 2023-09-14 | Wang Wei Chih | Scanning based thz nearfield imaging device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007124250A (ja) | 2005-10-27 | 2007-05-17 | Tokyo Institute Of Technology | テラヘルツ発振素子 |
JP2008301374A (ja) | 2007-06-01 | 2008-12-11 | Canon Inc | 発振器の製造方法、及び発振器 |
JP2014200065A (ja) | 2013-03-12 | 2014-10-23 | キヤノン株式会社 | 発振素子 |
JP2017157907A (ja) | 2016-02-29 | 2017-09-07 | 国立大学法人大阪大学 | テラヘルツ素子およびテラヘルツ集積回路 |
Family Cites Families (5)
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US7177515B2 (en) * | 2002-03-20 | 2007-02-13 | The Regents Of The University Of Colorado | Surface plasmon devices |
JP2006210585A (ja) | 2005-01-27 | 2006-08-10 | National Institute For Materials Science | 積層ジョセフソン接合を用いた新型テラヘルツ発振器 |
JP5836691B2 (ja) * | 2010-09-22 | 2015-12-24 | キヤノン株式会社 | 発振器 |
JP5686415B2 (ja) | 2012-02-21 | 2015-03-18 | 日本電信電話株式会社 | 共鳴トンネルダイオードおよびテラヘルツ発振器 |
JP6570187B2 (ja) | 2014-05-08 | 2019-09-04 | 国立大学法人東京工業大学 | 周波数可変テラヘルツ発振器及びその製造方法 |
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2018
- 2018-11-19 JP JP2018216285A patent/JP7088549B2/ja active Active
-
2019
- 2019-11-19 US US17/290,811 patent/US11309834B2/en active Active
- 2019-11-19 WO PCT/JP2019/045251 patent/WO2020105627A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007124250A (ja) | 2005-10-27 | 2007-05-17 | Tokyo Institute Of Technology | テラヘルツ発振素子 |
JP2008301374A (ja) | 2007-06-01 | 2008-12-11 | Canon Inc | 発振器の製造方法、及び発振器 |
JP2014200065A (ja) | 2013-03-12 | 2014-10-23 | キヤノン株式会社 | 発振素子 |
JP2017157907A (ja) | 2016-02-29 | 2017-09-07 | 国立大学法人大阪大学 | テラヘルツ素子およびテラヘルツ集積回路 |
Also Published As
Publication number | Publication date |
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US11309834B2 (en) | 2022-04-19 |
WO2020105627A1 (ja) | 2020-05-28 |
US20210328550A1 (en) | 2021-10-21 |
JP2020088466A (ja) | 2020-06-04 |
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