JPWO2015125493A1 - ラジカル源及び分子線エピタキシー装置 - Google Patents
ラジカル源及び分子線エピタキシー装置 Download PDFInfo
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- 238000001451 molecular beam epitaxy Methods 0.000 title claims description 20
- 230000008878 coupling Effects 0.000 claims abstract description 20
- 238000010168 coupling process Methods 0.000 claims abstract description 20
- 238000005859 coupling reaction Methods 0.000 claims abstract description 20
- 150000003254 radicals Chemical class 0.000 claims description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 30
- 238000009616 inductively coupled plasma Methods 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
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Abstract
Description
また、本発明において、高周波電力を生成する高周波電源と、高周波電源の出力する高周波電力を、第1電極、コイル、第2電極へ分配し、且つ高周波電源に対してインピーダンス整合を取る機能を有するインピーダンス整合部を有する分配器と、分配器による第1電極、コイル、第2電極への分配電力を、外部指令により可変制御する制御装置とを有した電源装置を設けることができる。これにより、第1の容量結合プラズマ、誘導結合プラズマ、第2の容量結合プラズマの密度比を調整することができ、開口部から放出されるプラズマの密度、本装置から出力されるラジカルの密度と、エネルギーとを適正に制御することができる。
結合管又は寄生プラズマ防止管は、電極と供給管内壁との間で寄生プラズマが生じてラジカル密度の低下を引き起こしてしまうのを防止するものである。プラズマ生成管及びそれに連続した結合管、又は、寄生プラズマ防止管の材料は、BN、PBN、Al2 O3 、SiO2 などのセラミックを用いることができる。
また、本発明において、永久磁石又は電磁石は、電極の内部であって、中空部に露出するよう配置されていることが望ましい。
また、本発明において、供給管により供給される気体を窒素とすることで、窒素ラジカルを生成することができる。
また、他の発明は、上記のラジカル源を有する分子線エピタキシー装置である。これにより、高エネルギー且つ高密度のラジカルを発生させるラジカル源を有した分子線エピタキシー装置とすることができる。特に、供給するラジカルを窒素ラジカルとすることで、III 族窒化物半導体の成膜速度を向上させた分子線エピタキシー装置とすることができる。
なお、永久磁石14、33は、必ずしも存在しなくとも良いし、何れか1方のみ存在するようにしても良い。また、電磁石に代えても良いし、永久磁石に追加して電磁石を設けても良い。
2:基板ステージ
3:基板
4A、4B、4C:分子線セル
10:供給管
11:プラズマ生成管
12:コイル
13:第1CCP電極
14:永久磁石
16:給水管
17:排水管
18:筐体
19:オリフィス板
20:孔
21:端面板
22:開口
23:結合管
30:第2CCP電極
Claims (10)
- 気体を供給する供給管と、
前記供給管の下流側において前記供給管と接続する誘電体からなるプラズマ生成管と、
前記プラズマ生成管の外壁に位置し、前記プラズマ生成管の内部に誘導結合プラズマを発生させるコイルと、
前記プラズマ生成管の外壁であって、前記コイルよりも前記供給管に近い側に位置し、前記プラズマ生成管の内部に第1の容量結合プラズマを発生させて誘導結合プラズマ中に第1の容量結合プラズマを導入する第1電極と、
前記プラズマ生成管の外壁であって、前記コイルよりも下流側に位置し、前記プラズマ生成管の内部に第2の容量結合プラズマを発生させて、下流に向かって流れる前記第1の容量結合プラズマ及び前記誘導結合プラズマ中に、第2の容量結合プラズマを導入する第2電極と
を有することを特徴とするラジカル源。 - 前記プラズマ生成管のプラズマを放出する開口部は下流に向かって径が拡大したテーパ部を有し、このテーパ部の外壁に前記第2電極が配設されていることを特徴とする請求項1に記載のラジカル源。
- 高周波電力を生成する高周波電源と、
前記高周波電源の出力する前記高周波電力を、前記第1電極、前記コイル、前記第2電極へ分配し、且つ前記高周波電源に対してインピーダンス整合を取る機能を有するインピーダンス整合部を有する分配器と、
前記分配器による前記第1電極、前記コイル、前記第2電極への分配電力を、外部指令により可変制御する制御装置と
を有した電源装置を有することを特徴とする請求項1又は請求項2に記載のラジカル源。 - 前記供給管と前記プラズマ生成管との接続部において、前記供給管の開口から挿入された、前記プラズマ生成管の底部から連続して伸びた結合管を有し、
前記供給管は導体から成る
ことを特徴とする請求項1乃至請求項3の何れか1項に記載のラジカル源。 - 前記第1の容量結合プラズマ又は前記第2の容量結合プラズマを発生する領域の前記プラズマ生成管外周に沿って配置され、前記プラズマ生成管の中心部に前記第1の容量結合プラズマ又は前記第2の容量結合プラズマを偏在させる複数の永久磁石をさらに有することを特徴とする請求項1乃至請求項4の何れか1項に記載のラジカル源。
- 前記第1電極及び前記第2電極は、その内部で水を還流させる中空部を有することを特徴とする請求項1乃至請求項5の何れか1項に記載のラジカル源。
- 前記永久磁石は、前記電極の内部であって、前記中空部に露出するよう配置されている、ことを特徴とする請求項6に記載のラジカル源。
- 前記第1電極又は第2電極は、円筒形状であることを特徴とする請求項1乃至請求項7の何れか1項に記載のラジカル源。
- 前記供給管により供給される前記気体は窒素であり、窒素ラジカルを生成することを特徴とする請求項1乃至請求項8の何れか1項に記載のラジカル源。
- 請求項1乃至請求項9の何れか1項に記載のラジカル源を有する分子線エピタキシー装置。
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JP2014033099 | 2014-02-24 | ||
JP2014033099 | 2014-02-24 | ||
PCT/JP2015/000864 WO2015125493A1 (ja) | 2014-02-24 | 2015-02-23 | ラジカル源及び分子線エピタキシー装置 |
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US10128083B2 (en) * | 2016-06-01 | 2018-11-13 | Vebco Instruments Inc. | Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas |
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EP3113583A4 (en) | 2017-09-06 |
US20160181068A1 (en) | 2016-06-23 |
JP6519027B2 (ja) | 2019-05-29 |
US10312054B2 (en) | 2019-06-04 |
EP3113583A1 (en) | 2017-01-04 |
EP3113583B1 (en) | 2020-08-12 |
WO2015125493A1 (ja) | 2015-08-27 |
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