JPWO2015022900A1 - 電子機器、電子機器の制御方法、及び制御プログラム - Google Patents

電子機器、電子機器の制御方法、及び制御プログラム Download PDF

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Publication number
JPWO2015022900A1
JPWO2015022900A1 JP2015531789A JP2015531789A JPWO2015022900A1 JP WO2015022900 A1 JPWO2015022900 A1 JP WO2015022900A1 JP 2015531789 A JP2015531789 A JP 2015531789A JP 2015531789 A JP2015531789 A JP 2015531789A JP WO2015022900 A1 JPWO2015022900 A1 JP WO2015022900A1
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region
moving image
imaging
unit
electronic device
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Japanese (ja)
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聡志 土谷
聡志 土谷
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Nikon Corp
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Nikon Corp
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/63Control of cameras or camera modules by using electronic viewfinders
    • H04N23/631Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters
    • H04N23/632Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters for displaying or modifying preview images prior to image capturing, e.g. variety of image resolutions or capturing parameters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/51Control of the gain
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/533Control of the integration time by using differing integration times for different sensor regions
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/581Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/79Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Human Computer Interaction (AREA)
  • Studio Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2015531789A 2013-08-12 2014-08-07 電子機器、電子機器の制御方法、及び制御プログラム Pending JPWO2015022900A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013167308 2013-08-12
JP2013167308 2013-08-12
PCT/JP2014/070874 WO2015022900A1 (ja) 2013-08-12 2014-08-07 電子機器、電子機器の制御方法、及び制御プログラム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018196396A Division JP7063788B2 (ja) 2013-08-12 2018-10-18 電子機器

Publications (1)

Publication Number Publication Date
JPWO2015022900A1 true JPWO2015022900A1 (ja) 2017-03-02

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JP2015531789A Pending JPWO2015022900A1 (ja) 2013-08-12 2014-08-07 電子機器、電子機器の制御方法、及び制御プログラム
JP2018196396A Active JP7063788B2 (ja) 2013-08-12 2018-10-18 電子機器
JP2020191181A Active JP7192843B2 (ja) 2013-08-12 2020-11-17 撮像素子及び電子機器
JP2022196223A Active JP7544116B2 (ja) 2013-08-12 2022-12-08 撮像素子及び撮像装置
JP2024139612A Pending JP2024159886A (ja) 2013-08-12 2024-08-21 撮像素子

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JP2020191181A Active JP7192843B2 (ja) 2013-08-12 2020-11-17 撮像素子及び電子機器
JP2022196223A Active JP7544116B2 (ja) 2013-08-12 2022-12-08 撮像素子及び撮像装置
JP2024139612A Pending JP2024159886A (ja) 2013-08-12 2024-08-21 撮像素子

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US (6) US10321083B2 (https=)
EP (1) EP3035667B1 (https=)
JP (5) JPWO2015022900A1 (https=)
CN (2) CN105474627B (https=)
WO (1) WO2015022900A1 (https=)

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KR102499033B1 (ko) * 2018-01-31 2023-02-13 삼성전자주식회사 스택형 이미지 센서 및 스택형 이미지 센서를 포함하는 전자 장치
JP7051565B2 (ja) * 2018-05-01 2022-04-11 キヤノン株式会社 撮像装置及びその制御方法、撮像システム
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JP7004851B2 (ja) * 2018-12-26 2022-02-10 富士フイルム株式会社 撮像装置、撮像装置の画像データ処理方法、及びプログラム
CN110740272B (zh) * 2019-10-31 2021-05-14 Oppo广东移动通信有限公司 图像采集方法、摄像头组件及移动终端
JP7324866B2 (ja) * 2019-12-19 2023-08-10 富士フイルム株式会社 撮像装置
CN115552882A (zh) * 2020-05-28 2022-12-30 富士胶片株式会社 影像制作方法
JP7099560B2 (ja) * 2021-01-19 2022-07-12 株式会社ニコン 撮像素子及び撮像装置
JP2023013368A (ja) * 2021-07-16 2023-01-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
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JP2024159886A (ja) 2024-11-08
US20160198115A1 (en) 2016-07-07
US20230388674A1 (en) 2023-11-30
EP3035667A1 (en) 2016-06-22
EP3035667A4 (en) 2017-03-22
CN110213508A (zh) 2019-09-06
WO2015022900A1 (ja) 2015-02-19
CN105474627A (zh) 2016-04-06
EP3035667B1 (en) 2024-06-19
JP2021036719A (ja) 2021-03-04
JP7063788B2 (ja) 2022-05-09
CN110213508B (zh) 2021-10-15
US11356629B2 (en) 2022-06-07
US10805566B2 (en) 2020-10-13
CN105474627B (zh) 2019-06-04
JP7544116B2 (ja) 2024-09-03
US11758303B2 (en) 2023-09-12
US10321083B2 (en) 2019-06-11
US20190253655A1 (en) 2019-08-15
US20200366862A1 (en) 2020-11-19
US12425708B2 (en) 2025-09-23
JP2019036988A (ja) 2019-03-07
JP7192843B2 (ja) 2022-12-20
US20250380042A1 (en) 2025-12-11
US20220264048A1 (en) 2022-08-18
JP2023024534A (ja) 2023-02-16

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