JPWO2014189015A1 - 量子カスケードレーザ - Google Patents
量子カスケードレーザ Download PDFInfo
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- JPWO2014189015A1 JPWO2014189015A1 JP2015518240A JP2015518240A JPWO2014189015A1 JP WO2014189015 A1 JPWO2014189015 A1 JP WO2014189015A1 JP 2015518240 A JP2015518240 A JP 2015518240A JP 2015518240 A JP2015518240 A JP 2015518240A JP WO2014189015 A1 JPWO2014189015 A1 JP WO2014189015A1
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- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000007924 injection Substances 0.000 claims description 74
- 238000002347 injection Methods 0.000 claims description 74
- 230000007704 transition Effects 0.000 claims description 63
- 230000010355 oscillation Effects 0.000 claims description 23
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 321
- 230000004888 barrier function Effects 0.000 description 36
- 238000010586 diagram Methods 0.000 description 12
- 238000000295 emission spectrum Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 8
- 239000012792 core layer Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005274 electronic transitions Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005610 quantum mechanics Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
- H01S5/1096—Multi-wavelength lasing in a single cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2302/00—Amplification / lasing wavelength
- H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
- H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
50…InP基板、51…InGaAs下部コア層、52…InGaAs上部コア層、53…InPクラッド層、54…InGaAsコンタクト層、55…回折格子構造、
Lup…発光上準位、Lup1…第1発光上準位、Lup2…第2発光上準位、Llow…発光下準位、Llow1…第1発光下準位、Llow2…第2発光下準位、Llow3…第3発光下準位、Lr…緩和準位、MB…緩和ミニバンド。
Claims (5)
- 半導体基板と、
前記半導体基板上に設けられ、量子井戸発光層及び注入層からなる第1単位積層体が多段に積層されることで前記量子井戸発光層と前記注入層とが交互に積層されたカスケード構造が形成された第1活性層と、
前記半導体基板上に前記第1活性層に対して直列に設けられ、量子井戸発光層及び注入層からなる第2単位積層体が多段に積層されることで前記量子井戸発光層と前記注入層とが交互に積層されたカスケード構造が形成された第2活性層とを備え、
前記第1活性層の前記第1単位積層体は、そのサブバンド準位構造において、発光上準位と、発光下準位とを有し、電子のサブバンド間発光遷移によって第1周波数ω1の光を生成可能に構成され、
前記第2活性層の前記第2単位積層体は、そのサブバンド準位構造において、第1発光上準位と、前記第1発光上準位よりも高いエネルギーを有する第2発光上準位と、複数の発光下準位とを有し、電子のサブバンド間発光遷移によって第2周波数ω2の光を少なくとも生成可能に構成され、
前記第1活性層で生成される前記第1周波数ω1の光、及び前記第2活性層で生成される前記第2周波数ω2の光による差周波発生によって、前記第1周波数ω1及び前記第2周波数ω2の差周波数ωの光を生成することを特徴とする量子カスケードレーザ。 - 前記第2活性層の前記第2単位積層体は、そのサブバンド準位構造において、前記第2周波数ω2の光に加えて、前記第1周波数ω1の光を生成可能に構成されるとともに、
前記第2活性層で生成される光に対し、前記第2周波数ω2の光を選択するための回折格子による分布帰還型の発振機構が設けられていることを特徴とする請求項1記載の量子カスケードレーザ。 - 前記第2活性層の前記第2単位積層体は、そのサブバンド準位構造において、前記複数の発光下準位として、第1発光下準位と、前記第1発光下準位よりも高いエネルギーを有する第2発光下準位と、前記第2発光下準位よりも高いエネルギーを有する第3発光下準位とを有し、
前記第1発光下準位と前記第2発光下準位とのエネルギー差、前記第2発光下準位と前記第3発光下準位とのエネルギー差、及び前記第1発光上準位と前記第2発光上準位とのエネルギー差が、それぞれ前記差周波数ωの光のエネルギーと略一致するように構成されていることを特徴とする請求項1または2記載の量子カスケードレーザ。 - 前記第2活性層の前記第2単位積層体は、そのサブバンド準位構造において、
前記第1発光上準位から前記第1発光下準位への発光遷移のエネルギー、及び前記第2発光上準位から前記第2発光下準位への発光遷移のエネルギーが、それぞれ前記第1周波数ω1及び前記第2周波数ω2の一方の光のエネルギーと略一致するとともに、
前記第1発光上準位から前記第2発光下準位への発光遷移のエネルギー、及び前記第2発光上準位から前記第3発光下準位への発光遷移のエネルギーが、それぞれ前記第1周波数ω1及び前記第2周波数ω2の他方の光のエネルギーと略一致するように構成されていることを特徴とする請求項3記載の量子カスケードレーザ。 - 前記第1活性層の前記第1単位積層体は、そのサブバンド準位構造において、前記発光下準位よりも低いエネルギーを有する複数の準位を含む緩和ミニバンドを有し、前記発光上準位から前記発光下準位への発光遷移を経た電子は、縦光学フォノン散乱によって前記発光下準位から前記緩和ミニバンドへと緩和することを特徴とする請求項1〜4のいずれか一項記載の量子カスケードレーザ。
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JP2011243781A (ja) * | 2010-05-19 | 2011-12-01 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
US10340662B2 (en) * | 2014-06-04 | 2019-07-02 | Sharp Kabushiki Kaisha | Quantum cascade laser |
JP6371332B2 (ja) * | 2016-05-20 | 2018-08-08 | シャープ株式会社 | 量子カスケードレーザ |
CN108336643B (zh) * | 2018-01-31 | 2020-06-09 | 中国科学院上海微系统与信息技术研究所 | 有源区结构及具有宽带增益的太赫兹量子级联激光器 |
JP7028049B2 (ja) * | 2018-04-26 | 2022-03-02 | 住友電気工業株式会社 | 量子カスケードレーザ |
JP2020123662A (ja) * | 2019-01-30 | 2020-08-13 | 住友電気工業株式会社 | 量子カスケードレーザ |
JP7475924B2 (ja) * | 2020-03-30 | 2024-04-30 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
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US5509025A (en) | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
JP2010278326A (ja) | 2009-05-29 | 2010-12-09 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
JP5523759B2 (ja) | 2009-07-31 | 2014-06-18 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
JP2011243781A (ja) | 2010-05-19 | 2011-12-01 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
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US20160087408A1 (en) | 2016-03-24 |
WO2014189015A1 (ja) | 2014-11-27 |
JP6276758B2 (ja) | 2018-02-07 |
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