JPWO2014017536A1 - 光電変換層用組成物および光電変換素子 - Google Patents
光電変換層用組成物および光電変換素子 Download PDFInfo
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- JPWO2014017536A1 JPWO2014017536A1 JP2014526973A JP2014526973A JPWO2014017536A1 JP WO2014017536 A1 JPWO2014017536 A1 JP WO2014017536A1 JP 2014526973 A JP2014526973 A JP 2014526973A JP 2014526973 A JP2014526973 A JP 2014526973A JP WO2014017536 A1 JPWO2014017536 A1 JP WO2014017536A1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
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- 239000003504 photosensitizing agent Substances 0.000 description 1
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- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
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- FHNRXCZVLIJCGL-UHFFFAOYSA-N ruthenium(2+) tetrabutylazanium Chemical compound [Ru+2].CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC FHNRXCZVLIJCGL-UHFFFAOYSA-N 0.000 description 1
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- 229940045105 silver iodide Drugs 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- RAHZWNYVWXNFOC-UHFFFAOYSA-N sulfur dioxide Inorganic materials O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
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- 229930192474 thiophene Natural products 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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Abstract
Description
本発明の組成物は、半導体およびイオン性ポリマーを少なくとも含む。このような組成物は、後述するように、特に、光電変換層(又は光電変換素子を構成する光電変換層)を形成するための組成物として有用である。
半導体としては、無機半導体、有機半導体に大別でき、本発明では、無機半導体を好適に用いることができる。無機半導体としては、半導体特性を有する無機物であればよく、用途に応じて適宜選択でき、例えば、金属単体、金属化合物(金属酸化物、金属硫化物、金属窒化物など)が挙げられる。
周期表第11族金属と遷移金属(周期表第11族金属以外の遷移金属)との複合酸硫化物(例えば、LaCuOSなどの銅と周期表第3族金属との複合酸硫化物)、周期表第11族金属と遷移金属(周期表第11族金属以外の遷移金属)との複合酸セレン化物(例えば、LaCuOSeなどの銅と周期表第3族金属との複合酸セレン化物)など]など}、金属窒化物(窒化タリウムなど)、金属リン化物(InPなど)、金属硫化物{例えば、Cds、硫化銅(CuS、Cu2S)、複合硫化物[例えば、周期表第11族金属と典型金属との複合硫化物(例えば、CuGaS2、CuInS2などの銅と周期表第13族金属との複合硫化物)など}、金属セレン化物(CdSe、ZnSeなど)、金属ハロゲン化物(CuCl、CuBrなど)、周期表第13族金属−第15族金属化合物(GaAs、InSbなど)、周期表第12族金属−第16族金属化合物(CdTeなど)などの金属化合物(又は合金);金属単体(例えば、パラジウム、白金、銀、金、ケイ素、ゲルマニウム)などが挙げられる。
本発明は、半導体とイオン性ポリマーとを組み合わせる(複合化する)ことに特徴を有している。このような組み合わせにより、イオン性ポリマーがバインダー的に作用するためか、基板に対する半導体の優れた密着性を付与できる。しかも、イオン性ポリマーと組み合わせても、優れた光電変換特性を備えた光電変換層を得ることができる。この理由は定かではないが、所定量のイオン性ポリマーと半導体[特に、ナノサイズの半導体粒子(半導体ナノ粒子)]との組み合わせにより、半導体の分散安定性を向上でき、半導体特性を有効に発揮できることや、イオン性のポリマーの種類によってはイオン性ポリマー自体が光電変換により発生した電荷を輸送する電解質(固体電解質)としても機能することなどが考えられる。
なお、pHは、慣用の方法(例えば、アニオン性ポリマーの酸基を適当な塩基で中和する方法など)により調整することができる。
本発明の組成物は、さらに、色素を含んでいてもよい。色素を含有させることで、色素増感型の光電変換層又は色素増感型の光電変換素子(色素増感太陽電池など)を効率よく形成することができる。
(式中、IAはイオン性ポリマー中のイオン性基の数、ISはイオン性基1個あたりの占有面積、DAは色素(色素分子)の数、DSは色素1個あたりの占有面積、SSは、半導体の表面積を示す。)
上記式において、IAはイオン性基の総数であり、例えば、イオン性ポリマーのイオン交換容量(meq/g)にイオン性ポリマーの重量(g)及びアボガドロ数を掛けることで求めることができ、通常、IA×IS<SSである。IS、DSは、それぞれ、イオン性基1つの占有面積(m2)、色素1分子の占有面積(m2)であり、面積が最大となるよう投影した時の値を用いることができる。
本発明の積層体は、基板と、この基板上に積層された光電変換層(前記組成物で形成された光電変換層)とで構成される。
光電変換素子は、前記積層体(電極)を備えている。すなわち、光電変換素子は、電極としての積層体を備えている。代表的な光電変換素子の一例としては、太陽電池が挙げられる。特に、光電変換層が色素を含む場合、光電変換素子は、色素増感太陽電池を形成する。
酸化チタン粒子(石原産業(株)製、「ST−01」、平均一次粒子径7nm、比表面積300m2/g、アナターゼ型結晶)10重量部、アニオン性ポリマーを含む分散液(デュポン社製「ナフィオンDE2021」、20%の割合で含む水および1−プロパノール分散液、イオン交換容量0.95〜1.03meq/g、pH(25℃)=7、1分子当たりの占有面積約0.024nm2)25重量部(すなわち、アニオン性ポリマー5重量部)およびメタノール65重量部を混合して酸化チタン分散液を調製した。
実施例1において、酸化チタン粒子(石原産業(株)製、「ST−01」)に代えて酸化チタン((株)ダイセル製、ルチル型結晶)を用いたこと以外は、実施例1と同様にして、色素増感太陽電池を作製し、評価した。1週間後の出力特性を図2に示す。
酸化チタン粒子(石原産業(株)製、「ST−01」、平均一次粒子径7nm、比表面積300m2/g、アナターゼ型結晶)10重量部、アニオン性ポリマーを含む分散液(デュポン社製「ナフィオンDE2021」、20%の割合で含む水および1−プロパノール分散液、イオン交換容量0.95〜1.03meq/g、pH(25℃)=7、1分子当たりの占有面積約0.024nm2)25重量部(すなわち、アニオン性ポリマー5重量部)、色素(N719、東京化成工業(株)製、分子量1188.57、1分子当たりの占有面積約1nm2)0.1重量部およびメタノール65重量部を混合して酸化チタン分散液を調製した。
実施例1において、ITO付ガラス基板に代えてITO付ポリエチレンテレフタレート(PET)フィルム(アルドリッチ製、サイズ30×50mm、ITO層の厚み0.12μm)を用いたこと以外は、実施例1と同様にして、色素増感太陽電池を作製し、評価した。1週間後の出力特性を図4に示す。
実施例1において、イオン性ポリマーとして、ナフィオン2021DEに代えて、ポリアクリル酸ナトリウム(アルドリッチ製、重量平均分子量1800、pH(25℃)=7)を用いたこと以外は、実施例1と同様にして、色素増感太陽電池を作製し、評価した。1週間後の出力特性を図5に示す。
実施例1において、酸化チタン1重量部に対するナフィオン2021DEの量を、5重量部に代えて、0.05重量部(比較例1)、0.20重量部(実施例6)、0.67重量部(実施例7)、1.0重量部(実施例8)、2.0重量部(実施例9)、6.0重量部(実施例10)としたこと以外は、実施例1と同様にして、色素増感太陽電池を作製し、評価した。なお、比較例1では、ITO付ガラス基板に対する密着性が無く、容易に剥離し、色素増感太陽電池を作製できなかった。実施例6〜10について、1週間後の出力特性を図6に示す。
Claims (17)
- 光電変換層を形成するための組成物であって、半導体およびイオン性ポリマーを含み、かつイオン性ポリマーの割合が、半導体1重量部に対して0.1〜30重量部である光電変換層用組成物。
- 半導体が、金属酸化物である請求項1記載の組成物。
- 半導体が、酸化チタンナノ粒子である請求項1又は2記載の組成物。
- イオン性ポリマーが、アニオン性ポリマーで構成されている請求項1〜3のいずれかに記載の組成物。
- イオン性ポリマーが、強酸性イオン交換樹脂で構成されている請求項1〜4のいずれかに記載の組成物。
- イオン性ポリマーが、25℃におけるpHが5以上のアニオン性ポリマーで構成されている請求項1〜5のいずれかに記載の組成物。
- イオン性ポリマーの割合が、半導体1重量部に対して0.25〜15重量部である請求項1〜6のいずれかに記載の組成物。
- 半導体が酸化チタンナノ粒子で構成され、イオン性ポリマーがスルホ基を有するフッ素含有樹脂で構成されたpH6以上のイオン性ポリマーであり、イオン性ポリマーの割合が、半導体1重量部に対して0.5〜8重量部である請求項1〜7のいずれかに記載の組成物。
- さらに、色素を含む請求項1〜8のいずれかに記載の組成物。
- 色素が、ルテニウム錯体色素である請求項9記載の組成物。
- 導電性基板と、この基板上に積層された光電変換層とで構成された積層体であって、光電変換層が、請求項1〜10のいずれかに記載の組成物で形成されている積層体。
- 導電性基板が、導電体層が形成されたプラスチック基板である請求項11記載の積層体。
- 光電変換層の厚みが0.1〜100μmである請求項11又は12記載の積層体。
- 導電性基板に、請求項1〜10のいずれかに記載の組成物をコーティングし、半導体を焼結させることなく、請求項11〜13のいずれかに記載の積層体を製造する方法。
- 請求項11〜13のいずれかに記載の積層体を備えた光電変換素子。
- 電極としての色素を含む光電変換層で構成された積層体と、この電極に対向して配置される対極と、これらの電極間に介在し、封止処理された電解質層とで構成された色素増感太陽電池である請求項15記載の光電変換素子。
- 半導体を含む光電変換層に、半導体1重量部に対して0.1〜30重量部の割合でイオン性ポリマーを含有させて、基板に対する光電変換層の密着性を向上又は改善する方法。
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