JPWO2011021245A1 - Method for producing copper alloy for electronic equipment - Google Patents

Abstract

Provided is a copper alloy for electronic equipment having heat resistance without reducing strength even in a high temperature region at 500 ° C. Fe; 1.5 to 2.4% by mass, P; 0.008 to 0.08% by mass and Zn; 0.01 to 0.5% by mass, and observed with a transmission electron microscope, per 1 μm 2 The peak value in the particle diameter histogram is in the range of 15 to 35 nm in diameter, and precipitate particles having a diameter in the range are present at a frequency of 50% or more of the total frequency, and the half width is 25 nm or less. It is characterized by.

Description

  The present invention relates to a copper alloy for electronic equipment and a lead frame material used for electronic equipment such as semiconductor devices and electronic components.

2. Description of the Related Art Conventionally, lead frames used in semiconductor devices such as ICs and LSIs, terminals of various electronic components, and connectors are manufactured by subjecting copper alloy thin plates to press working or the like.
Here, residual stress is generated in a lead frame or the like manufactured by press working. In order to remove this residual stress, heat treatment at 400 to 450 ° C. is usually performed on the lead frame after pressing, and the crystal structure of the copper alloy is recrystallized during this heat treatment. It is known that the strength of the copper alloy is reduced by this. Therefore, heat resistance is required for copper alloys for electronic devices used for lead frames and the like so that the strength is not lowered by the heat treatment described above.

  As such a copper alloy for electronic devices, for example, a Cu—Fe—P alloy (so-called C194 alloy) which is a kind of precipitation hardening type alloy as disclosed in Patent Documents 1 and 2 is widely provided. Yes. This Cu-Fe-P alloy is intended to improve heat resistance, strength, and conductivity by dispersing Fe-P compounds as precipitated particles in a copper matrix.

  Generally, in the precipitation hardening type alloy described above, it is known that the size of the precipitate particles dispersed in the copper matrix phase greatly affects the characteristics. That is, coarse particles of 1 μm or more become main nucleus sites during recrystallization, and the larger the particle size, the easier the recrystallization nuclei are formed, resulting in a decrease in heat resistance, but a fine particle of several tens of nm or less in the copper matrix. If the particles are densely dispersed, the grain boundary movement is restrained by the pinning effect, recrystallization is suppressed, and heat resistance is improved.

Patent Document 1 describes Fe: 1.5 to 2.6 mass%, P: 0.01 to
0.1% by mass, Zn: 0.01-0.2% by mass, a lead frame Cu—Fe based alloy material consisting of the remainder Cu and inevitable impurities, the internal structure of the precipitated Fe particles Of these, the volume fraction of Fe particles having a diameter of 40 nm or less in the alloy is 0.2% or more, and the strength of the lead frame is relatively low even when heated to remove strain. An alloy material is disclosed.

Patent Document 2 describes heat resistance that includes Fe, the orientation density of the Cube orientation after annealing at 500 ° C. for 1 minute is 50% or less, and the average grain size after annealing at 500 ° C. for 1 minute is 30 μm or less. An excellent copper alloy is disclosed. When such a copper alloy is produced by hot rolling a copper alloy containing Fe and then cold rolling to produce a cold rolled copper alloy, cold rolling and annealing are performed between the hot rolling and the final cold rolling. Perform at least twice and cold-rolling 50 to 80%
It is manufactured at a processing rate of 30% to 85% at the time of final cold rolling, and has excellent heat resistance that hardly causes a decrease in strength even when heat treatment such as strain relief annealing is performed. Describes copper alloys and their manufacturing methods.

Japanese Patent Laid-Open No. 11-80862 JP2007-113121A

  Recently, with the improvement of press working technology, the number of pins of lead frames produced by press working has been increased, and the residual stress after processing tends to increase accordingly, and the residual stress is removed at 500 ° C. Heat treatment is also performed in the front and rear high temperature regions. Recently, a Cu—Fe—P alloy having excellent heat resistance, which can withstand these heat treatments and does not cause a decrease in strength, has recently been demanded.

Means for Solving the Invention

As a result of intensive studies, the present inventors have found that very fine precipitate particles (Fe—P compounds) having a diameter of less than 15 nm have a pinning effect that restrains the movement of particles in a high temperature region such as 500 ° C. The recrystallization suppression effect is small and cannot be expected so much, and the peak value in the histogram of the diameter of the precipitate particles per 1 μm ² is within the range of 15 to 35 nm in the observation with a transmission electron microscope, and the diameter within the range. Precipitate particles (Fe-P compounds) having a half-value width of 25 nm or less are present in order to suppress recrystallization in a high temperature region around 500 ° C. It was found to be very effective and greatly contribute to further improvement of heat resistance.

The copper alloy for electronic devices according to the present invention contains Fe; 1.5 to 2.4% by mass, P; 0.008 to 0.08% by mass, and Zn; 0.01 to 0.5% by mass. In the observation with a scanning electron microscope, the peak value in the histogram of the diameter of the precipitate particles per 1 μm ² is in the range of 15 to 35 nm in diameter, and the precipitate particles having the diameter in the range have a frequency of 50% or more of the total frequency. It exists, The half value width is 25 nm or less, It is characterized by the above-mentioned.

  That is, if the precipitate particles of the copper alloy for electronic equipment according to the present invention have a distribution state having a peak value of the diameter within the limited range value of the above histogram, the pinning effect is obtained even in a high temperature region around 500 ° C. It can be maximized to suppress recrystallization and reliably prevent a decrease in strength at high temperatures. If the peak value of the diameter of the precipitate particles is outside the limit range value, the pinning effect is reduced, recrystallization cannot be suppressed, and it is difficult to maintain the strength at high temperature.

Moreover, it is preferable that the copper alloy for electronic devices which concerns on this invention shall contain Ni; 0.003-0.5 mass% and Sn; 0.003-0.5 mass%.
Furthermore, the copper alloy for electronic devices according to the present invention contains at least one of Al, Be, Ca, Cr, Mg and Si, and the content thereof is 0.0007 to 0.5 mass%. It is preferable to set.
These elements have an effect of improving the characteristics of the copper alloy for electronic devices, and the characteristics can be improved by selectively containing them in accordance with the application.

  Furthermore, the copper alloy for electronic equipment according to the present invention is preferably set so that the tensile strength is 500 MPa or more and the electrical conductivity is 50% IACS or more. Accordingly, it is possible to provide a copper alloy for electronic equipment having heat resistance and high strength and high conductivity, and the lead frame material can be thinned.

  Furthermore, the present invention is a lead frame material used for a semiconductor device manufactured from the above copper alloy for electronic equipment. As a result, it is possible to provide a lead frame material for a semiconductor device which is excellent in heat resistance, thinned with high strength and high electrical conductivity.

  According to the present invention, it is possible to obtain a copper alloy for electronic equipment and a lead frame material having a high strength and a high electrical conductivity excellent in heat resistance without causing a decrease in strength even in a high temperature region around 500 ° C.

It is a transmission electron microscope observation photograph by the observation magnification of 50,000 times of the copper alloy for electronic devices which is embodiment of this invention. It is a transmission electron microscope observation photograph by the observation magnification of 100,000 times of the copper alloy for electronic devices which is embodiment of this invention. It is a detailed histogram of the diameter of the deposit particle | grains per micrometer < ² > by the transmission electron microscope observation of the copper alloy for electronic devices which is embodiment of this invention. It is the schematic which shows transition of the histogram of the diameter of the precipitate particle | grains per micrometer ² by the transmission electron microscope observation in the cold rolling at the time of manufacture of the copper alloy for electronic devices which is embodiment of this invention, and a low-temperature annealing process. . It is a graph which shows the heat resistance (time-dependent change of a retention rate) by 500 degreeC heating holding | maintenance of the copper alloy for electronic devices which is embodiment of this invention.

The copper alloy for electronic equipment which is one embodiment of the present invention will be described in detail with reference to the accompanying drawings.
(Component composition of copper alloy)
In the present invention, a lead frame material or the like used in a semiconductor device must have basic characteristics such as excellent heat resistance, tensile strength of 500 MPa or more, and conductivity of 50% IACS or more. For this reason, as Cu—Fe—P—Zn-based copper alloy, Fe: 1.5 to 2.4 mass%, P: 0.008 to 0.08 mass% and Zn: 0.01 to 0.5 mass% And the balance is made of Cu and inevitable impurities. You may further selectively contain elements, such as Sn and Ni mentioned later, with respect to this basic composition.

(Fe)
Fe has the effect of improving the strength and heat resistance by forming precipitate particles dispersed in the copper matrix, but if its content is less than 1.5% by mass, the number of precipitates is insufficient, and the effect Can't succeed. On the other hand, if the content exceeds 2.4% by mass, coarse precipitate particles that do not contribute to the improvement of strength and heat resistance exist, and there is a shortage of precipitate particles having a size effective for heat resistance. become. For this reason, it is preferable to make content of Fe into the range of 1.5-2.4 mass%.

(P)
P has the effect of improving the strength and heat resistance by forming precipitate particles dispersed in the copper matrix with Fe, but if the content is less than 0.008% by mass, the number of precipitate particles is insufficient. , You can not make the effect. On the other hand, if the content exceeds 0.08% by mass, coarse precipitate particles that do not contribute to the improvement of strength and heat resistance exist, and the precipitate particles having a size effective for heat resistance are insufficient. As a result, the electrical conductivity and workability deteriorate. For this reason, it is preferable to make content of P into the range of 0.008-0.08 mass%.

(Zn)
Zn has the effect of improving the heat resistance peelability of the solder by solid solution in the copper matrix, and if it is less than 0.01% by mass, the effect cannot be achieved. On the other hand, even if the content exceeds 0.5% by mass, further effects cannot be obtained, and the amount of solid solution in the mother phase increases, resulting in a decrease in conductivity. For this reason, it is preferable to make content of Zn into the range of 0.01-0.5 mass%.

(Ni)
Ni has an effect of improving the strength by dissolving in the matrix, and if it is less than 0.003 mass%, the effect cannot be achieved. On the other hand, if the content exceeds 0.5% by mass, the conductivity is lowered. For this reason, when it contains Ni, it is preferable to set it as the range of 0.003-0.5 mass%.

(Sn)
Sn has an effect of improving the strength by dissolving in the matrix, and if it is less than 0.003 mass%, the effect cannot be achieved. On the other hand, if the content exceeds 0.5% by mass, the conductivity is lowered. For this reason, when it contains Sn, it is preferable to set it as the range of 0.003-0.5 mass%.

  In addition, the copper alloy of this invention may contain 0.0007-0.5 mass% of at least 1 sort (s) among Al, Be, Ca, Cr, Mg, and Si. These elements have a role of improving various properties of the copper alloy, and are preferably added selectively depending on the application.

(Diameter and number of precipitate particles)
As shown in FIG. 3, the copper alloy for electronic equipment according to the present invention has a peak value in the diameter histogram of the precipitate particles per 1 μm ^{2 in} the range of 15 to 35 nm in the transmission electron microscope observation, and Precipitate particles having a diameter within the range are present at a frequency of 50% or more of the total frequency, and the half width is 25 nm or less.

  That is, if the diameter of the precipitate particles is a distribution state having a peak value within the limited range value of the above-mentioned histogram, even in a high temperature region around 500 ° C., the pinning effect is maximized and recrystallization is performed. It is possible to suppress the strength decrease at a high temperature. If the peak value of the diameter of the precipitate particles is out of the limit range value, the pinning effect becomes small, recrystallization cannot be suppressed, the strength at high temperature cannot be maintained, and the heat resistance is lowered.

Here, the diameter of the precipitate particles was calculated as the diameter of a circle having an area equal to the area of the precipitate particles (equivalent circle diameter) in the cross-sectional observation. In this case, the area of the precipitate particles is a value obtained by converting the projection area in the image vertical direction obtained from the transmission electron microscope observation image into the actual area from the observation magnification.
In addition, in the transmission electron microscope observation, for the precipitate particles of 5 nm or less, it is impossible to clearly identify the precipitate particles or the shadow generated at the time of observation. It was decided not to include it in the total number.
Furthermore, in the observation, the resolution changes depending on the observation magnification, and the diameter and the number of the observed precipitate particles vary. Therefore, when measuring precipitate particles of 15 nm or more, the observation magnification was set to 50,000 times, and when measuring precipitate particles of less than 15 nm, the observation magnification was set to 100,000 times.

  A thin film for observation with a transmission electron microscope is prepared from a thin plate of a copper alloy for electronic equipment, and the structure is observed at observation magnifications of 50,000 and 100,000, and the diameter and number of precipitate particles are measured. FIG. 1 shows an observation photograph at an observation magnification of 50,000 times, and FIG. 2 shows an observation photograph at an observation magnification of 100,000. In addition, about the actual magnification of the photograph shown by FIG. 1, FIG. 2, it will convert from the scale bar described in the lower right of these photographs.

  In FIG.1 and FIG.2, the particle | grains shown by the arrow are deposits. The particle indicated by the arrow A has a diameter of 15 to 35 nm, the particle indicated by the arrow B is less than 15 nm in diameter, and the particle indicated by the arrow C exceeds 35 nm in diameter. A sample prepared by a replica method may be used for transmission electron microscope observation.

The field of view of the photograph shown in FIG. 1 (observation magnification of 50,000 times) is 2.6 μm ² . Therefore, the number of precipitate particles counted in this photograph is divided by 2.6, and the number of precipitates per 1 μm ² is calculated.
Similarly, the visual field area of the photograph shown in FIG. 2 (observation magnification of 100,000 times) is 0.65 μm ² . Therefore, the number of precipitate particles counted in this photograph is divided by 0.65 to calculate the number of precipitates per 1 μm ² .
In addition, since transmission electron microscope observation is local observation, it is preferable to perform such observation a plurality of times by changing observation locations.

(Heat resistance test)
The heat resistance test of the copper alloy for electronic equipment of the present invention is preferably carried out by the following method and evaluated by the retention rate.
The Vickers strength after the copper alloy thin plate sample of the present invention was prepared and held at 500 ° C. for 1, 3, 5, and 10 minutes in a heating and holding furnace, and compared with the Vickers strength before each heat treatment. Heat resistance is evaluated by the retention rate.
The retention is calculated by (Vickers strength after heat treatment) / (Vickers strength before heat treatment). A representative example of the change in the retention rate in each heating and holding time is shown in FIG.
The copper alloy for electronic devices according to the present invention has excellent heat resistance in which the effect of pinning the precipitate particles is sufficiently exhibited, and the retention after heating and holding at 500 ° C. for 10 minutes is 88% or more.

(Production conditions)
Next, manufacturing conditions for the Cu—Fe—P based copper alloy having the precipitate particles (Fe—P based compound) of the present invention will be described below. Except for the preferable aging treatment, cold rolling, and low-temperature annealing described later, it is not necessary to greatly change the normal manufacturing process itself.
Moreover, the change of the histogram of the diameter of the deposit particle | grains per micrometer < ² > of the copper alloy in cold rolling and low temperature annealing in this manufacturing process is shown in FIG. The horizontal axis is the particle size of the precipitate particles, and the vertical axis is the frequency.
First, the copper alloy adjusted to the above preferred component range is melt cast, and after the ingot is chamfered, it is hot-rolled at a rolling rate of 60% or more, and then at 900 to 950 ° C. A solution treatment for 4 hours is performed.

(Aging treatment)
The copper alloy plate after solution treatment is subjected to aging treatment at 450 to 575 ° C. for 3 to 12 hours to precipitate precipitate particles having a wide particle size distribution, thereby obtaining precipitate particles having a final target configuration. Create a foundation for Precipitate particles do not sufficiently precipitate at 450 ° C. or less or 3 hours or less, and the copper alloy structure softens at 575 ° C. or more or 12 hours or more.

(First cold rolling)
The copper alloy plate after the aging treatment is cold-rolled at a processing rate of 60 to 80% to reduce the particle size of the precipitate and promote the precipitation of further precipitate particles. Since the preferential nucleation site of the precipitation phase becomes a dislocation cell boundary that is advantageous in terms of driving force for nucleation, the nucleation frequency is promoted. When the processing rate is 60% or less, it is insufficient to reduce the particle size of the precipitate particles, and when it is 80% or more, the effect of promoting the nucleation frequency is hindered. As shown in FIG. 4, it is presumed that the peak value of the histogram of the diameter of the precipitate particles is not formed at this stage.

(First low temperature annealing)
The copper alloy sheet after the first cold rolling is subjected to low temperature annealing at 200 to 400 ° C. for 0.5 minutes to 3 hours, and the peak value, frequency and half width of the histogram of the diameter of the precipitate particles are within a certain range value. Shift in. If it is 200 ° C. or less or 0.5 minutes or less, there is no effect, and if it is 400 ° C. or 3 hours or more, it leads to coarsening of the precipitate particles and hinders the effect of pinning. As shown in FIG. 4, at this stage, the peak value of the histogram of the diameter of the precipitate particles is assumed to be 15 nm or less, and the pinning effect is not sufficiently exhibited. With only this single low-temperature annealing, it is impossible to put the peak value, frequency, and half-value width of the histogram of the diameter of the precipitate particles within the optimum range values, and further cold rolling and low-temperature annealing are required.

(Second cold rolling)
The copper alloy sheet after the first low-temperature annealing is cold-rolled at a processing rate of 30 to 60%, and a base for shifting the precipitate particles within the peak value, frequency, and half-value width ranges of the target diameter histogram is created. . If the processing rate is 60% or more, the rolling rate as a whole increases, leading to the promotion of recrystallization, and also adversely affects strength, conductivity, and Vickers hardness. There is almost no effect at a processing rate of 30% or less. As shown in FIG. 4, the histogram peak value of the diameter of the precipitate particles is still 15 nm or less even at this stage. However, if the ground for optimizing the histogram is completed by promoting the precipitation of further precipitate particles. Inferred.

(Second low temperature annealing)
The copper alloy sheet after the second cold rolling is annealed at 200 to 400 ° C. for 0.5 minutes to 3 hours, and as shown in FIG. 4, the peak in the histogram of the diameter per 1 μm ^{2 of the} precipitate particles The value is within the range of 15 to 35 nm in diameter, and the frequency is 50% or more of the total frequency, and the half-value width is 25 nm or less, so that the pinning effect is maximized. The details of the histogram of the diameter per 1 μm ^{2 of the} precipitate particles are shown in FIG.

If the histogram of the diameter of the precipitate particles per 1 μm ² does not shift within the target peak value, frequency, and full width at half maximum in this second low-temperature annealing, cold rolling and low-temperature annealing are further performed at the above processing rate. It is necessary to repeat under heat treatment conditions. In this case, there is no point in repeating cold rolling or low temperature annealing alone, and it is important to perform low temperature annealing after cold rolling.

  The copper alloy for electronic devices according to the present embodiment configured as described above exhibits the pinning effect to the maximum even in a high temperature region around 500 ° C., and does not cause a decrease in strength and has excellent heat resistance. High strength, high conductivity copper alloy for electronic equipment and lead frame material.

Hereinafter, examples of the present invention will be described in detail including comparative examples.
An ingot having a thickness of 30 mm, a width of 100 mm, and a length of 250 mm, which is obtained by melting a copper alloy having the composition shown in Table 1 below (components other than additive elements are Cu and inevitable impurities) in a reducing atmosphere using an electric furnace. Was made. The ingot was heated at 730 ° C. for 1 hour, then hot-rolled at a rolling rate of 60% to finish to a thickness of 11 mm, and the surface was chamfered to a plate thickness of 9 mm by milling, and then 920 ° C. After performing the solution treatment for 3 hours, cold rolling was performed to a plate thickness of 2 mm. Next, after performing an aging treatment at 450 to 575 ° C. for 3 to 12 hours, first cold rolling is performed at a processing rate of 60 to 80%, and 0.5 minutes to 3 hours at 200 to 400 ° C. First low temperature annealing was performed. Next, after performing the second cold rolling on the copper alloy thin plate after the first low temperature annealing at a processing rate of 30 to 60%, the second low temperature annealing at 200 to 400 ° C. for 0.5 minutes to 3 hours. The 0.3 mm copper alloy thin plate shown in Examples 1 to 16 in Table 1 was obtained. In addition, Comparative Examples 1-16 were produced by changing a component composition, cold rolling conditions, and low temperature annealing conditions.

  A thin film for observation with a transmission electron microscope is prepared from the obtained copper alloy thin plate, and the structure is observed at an observation magnification of 50,000 times and 100,000 times at arbitrary 10 locations, and the diameter and number of the precipitate particles are measured. The average value was taken as the measured value.

  The diameter of the precipitate particles was calculated as the diameter of a circle having an area equal to the area of the precipitate particles (circle equivalent diameter). In this case, the area of the precipitate particles is a value obtained by converting the projection area in the image vertical direction obtained from the transmission electron microscope observation image into the actual area from the observation magnification.

  For precipitate particles of 5 nm or less, it is impossible to clearly discriminate whether they are precipitate particles or shadows generated during observation, and they are not included in the total number of observed precipitate particles. When measuring the precipitate particles, the observation magnification was 50,000 times, and when measuring the precipitate particles of less than 15 nm, the observation magnification was 100,000 times.

  Table 2 shows the details of the number of measured particles according to the peak value, the total frequency, the half-value width, and the particle diameter of the precipitate particles, which were determined based on the transmission electron microscope of these copper alloy thin plates.

From Table 2, the copper alloy thin plate of this example has a peak value in the histogram of the diameter of the precipitate particles per 1 μm ^{2 in} the range of 15 to 35 nm in diameter, and the precipitate particles in the range of 15 to 35 nm. Exists at a frequency of 50% or more of the total frequency, and the full width at half maximum is 25 nm or less.

Table 3 shows the measurement results of the tensile strength, Vickers hardness, and conductivity of these copper alloy thin plates.
The tensile strength was measured by preparing a JIS No. 5 piece with the test piece parallel to the rolling direction in the longitudinal direction.
Vickers hardness is a 10 mm x 10 mm test piece, and a 0.5 V load is measured using a micro Vickers hardness meter (trade name "micro hardness meter") manufactured by Matsuzawa Seiki Co., Ltd. The hardness was an average value thereof.
The electrical conductivity was calculated by an average cross section method by processing a strip-shaped test piece of 10 mm × 30 mm by milling, measuring electric resistance with a double bridge type resistance measuring device.

  From the following Table 3, it can be seen that the copper alloy thin plate of this example has a tensile strength of 517 to 570 MPa and a conductivity of 61 to 72% IACS.

Moreover, the heat resistance test of these copper alloy thin plates was conducted. The test method is to prepare a 10 mm × 10 mm test piece, place the test piece in a heating and holding furnace, hold the sample at 500 ° C. for 1, 3, 5, and 10 minutes, respectively, measure the Vickers strength, and perform the Vickers before each heat treatment. The heat resistance was evaluated by the retention rate compared to the strength.
The retention was calculated by (Vickers strength after heat treatment) / (Vickers strength before heat treatment).
The results of the heat resistance test are also shown in Table 3.

From Table 3, the copper alloy thin plate of this example exhibits the pinning effect of the precipitate particles to the maximum, and the retention after heat treatment at 500 ° C. for 10 minutes is 88 to 93% and has excellent heat resistance. You can see that
FIG. 5 shows a graph showing the change over time in the retention rates of representative Examples 1, 3, 6, and 8 and Comparative Examples 1, 3, 6, and 9. From this, it can be seen that the copper alloy thin plate of this example has excellent heat resistance.

From these results, the Cu—Fe—P-based copper alloy for electronic devices of the present invention has a tensile strength of 500 MPa or more and an electric conductivity of 50% IACS or more, and has the maximum pinning effect on the precipitate particles. It can be seen that it has excellent heat resistance that hardly exerts a decrease in strength even in a high temperature region around 500 ° C., and is suitable for use as a lead frame material.

The present invention melts and casts a copper alloy containing Fe; 1.5 to 2.4% by mass, P; 0.008 to 0.08% by mass and Zn; 0.01 to 0.5% by mass. Then, hot rolling is performed at a rolling rate of 60% or more, then solution treatment is performed at 900 to 950 ° C. for 2 to 4 hours, and the copper alloy plate after solution treatment is subjected to 450 to 575. Aging treatment is carried out at 3 ° C. for 3 to 12 hours, the first cold rolling is performed on the copper alloy plate after the aging treatment at a processing rate of 60 to 80%, and the copper alloy plate after the first cold rolling is 200 to 400. 1st low temperature annealing for 0.5 minutes-3 hours at 0 degreeC, the 2nd cold rolling of the processing rate 30 to 60% is performed to the copper alloy plate after the 1st low temperature annealing, and after the 2nd cold rolling By performing second low temperature annealing at 200 to 400 ° C. for 0.5 minutes to 3 hours on the copper alloy plate, the precipitate grains per 1 μm ^{2 in} observation with a transmission electron microscope The peak value in the histogram of equivalent circle diameter equal to the area of the child is in the range of 15 to 35 nm in diameter, and precipitate particles having a diameter in the range are present at a frequency of 50% or more of the total frequency, and the half width is It manufactures the copper alloy for electronic devices which is 25 nm or less.
Moreover, after the second low-temperature annealing, cold rolling with a processing rate of 30 to 60% and low-temperature annealing at 200 to 400 ° C. for 0.5 minutes to 3 hours may be repeatedly performed after the cold rolling.
Moreover , it is preferable that the said copper alloy shall contain Ni; 0.003-0.5 mass% and Sn; 0.003-0.5 mass%.
Furthermore, the copper alloy, Al, Be, Ca, and containing at least one or more of C r及 beauty Si, it is preferable to set the content to from 0.0007 to 0.5 wt%.
These elements have an effect of improving the characteristics of the copper alloy for electronic devices, and the characteristics can be improved by selectively containing them in accordance with the application.

Furthermore, the method for producing a copper alloy for electronic equipment according to the present invention is preferably set so that the tensile strength is 500 MPa or more and the electrical conductivity is 50% IACS or more. Accordingly, it is possible to provide a copper alloy for electronic equipment having heat resistance and high strength and high conductivity, and the lead frame material can be thinned.

Claims (7)

Fe; 1.5 to 2.4 mass%, P; 0.008 to 0.08 mass% and Zn; 0.01 to 0.5 mass%, and precipitation per μm ² in transmission electron microscope observation The peak value in the histogram of the diameter of the object particles is in the range of 15 to 35 nm in diameter, and the precipitate particles having the diameter in the range are present at a frequency of 50% or more of the total frequency, and the half width is 25 nm or less. A copper alloy for electronic devices.   The copper alloy for electronic devices according to claim 1, containing Ni; 0.003 to 0.5 mass% and Sn; 0.003 to 0.5 mass%.   2. At least one of Al, Be, Ca, Cr, Mg and Si is contained, and the content is set to 0.0007 to 0.5 mass%. Copper alloy for electronic equipment.   It contains at least 1 sort (s) of Al, Be, Ca, Cr, Mg, and Si, and the content is set to 0.0007-0.5 mass%. Copper alloy for electronic equipment.   The copper alloy for electronic devices according to any one of claims 1 to 4, wherein the tensile strength is 500 MPa or more and the electrical conductivity is 50% IACS or more.   The lead frame material used for the semiconductor device manufactured from the copper alloy for electronic devices of any one of Claims 1-4. The lead frame material used for the semiconductor device manufactured from the copper alloy for electronic devices of Claim 5.

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