JPWO2010029701A1 - Magnetoresistive element, manufacturing method thereof, and storage medium used in the manufacturing method - Google Patents

Abstract

A magnetoresistive element having a higher MR ratio than the conventional one and a method for manufacturing the same are provided. A magnetoresistive element having a substrate, a crystalline first ferromagnetic layer, a tunnel barrier layer, a crystalline second ferromagnetic layer, a nonmagnetic intermediate layer, and a crystalline third ferromagnetic layer, The magnetic layer is made of an alloy containing Co atoms, Fe atoms and B atoms, the tunnel barrier layer has a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer, and the second ferromagnetic layer is Co atoms, It consists of an alloy containing Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, and the third ferromagnetic layer contains an alloy containing Co atoms, Fe atoms and B atoms or Co atoms and Fe atoms. And a layer made of an alloy containing Ni atoms, Fe atoms and B atoms, or a layer made of an alloy containing Ni atoms and Fe atoms.

Description

  The present invention relates to a magnetoresistive element used in a magnetic reproducing head of a magnetic disk drive, a storage element of a magnetic random access memory, and a magnetic sensor, preferably a tunnel magnetoresistive element (particularly, a spin valve type tunnel magnetoresistive element). Furthermore, the present invention relates to a method of manufacturing a magnetoresistive element and a storage medium used for the manufacturing method.

  Patent Documents 1 to 6 and Non-Patent Documents 1 and 2 describe a TMR (Tunneling Magneto Resistance) effect element including a tunnel barrier layer and first and second ferromagnetic layers disposed on both sides thereof. Is described. As the first and / or second ferromagnetic layers constituting this element, an alloy containing Co atoms, Fe atoms and B atoms (hereinafter referred to as a CoFeB alloy) is used. In addition, a polycrystalline structure is described as the CoFeB alloy layer.

  Patent Documents 2 to 5, Patent Document 7, and Non-Patent Documents 1 to 5 describe TMR elements using a crystalline magnesium oxide film made of single crystal or polycrystal as a tunnel barrier film. ing.

JP 2002-204004 A International Publication No. 2005/088745 Pamphlet JP 2003-304010 A JP 2006-080116 A US Patent Application Publication No. 2006/0056115 US Pat. No. 7,252,852 JP 2003-318465 A

D. D. “Applied Physics Letters”, 86,092502 (2005) by Djayapraira et al. "Japan Journal of Applied Physics" by Shinji Yuasa et al., Vol. 43, no. 48, pp 588-590, issued April 2, 2004 C. L. Platt et al., “J. Appl. Phys.” 81 (8), 15 April 1997. W. H. Butler et al., “The American Physical Society” (Physical Review Vol. 63, 0544416) 8, January 2001. S. P. Published by Parkin et al., "2004 Nature Publishing Group" Letters, pp 862-887, published October 31, 2004.

  An object of the present invention is to provide a magnetoresistive element having a further improved high MR ratio, a manufacturing method thereof, and a storage medium used in the manufacturing method as compared with the prior art.

The first of the present invention is a substrate,
A crystalline first ferromagnetic layer made of an alloy containing Co atoms, Fe atoms and B atoms located on the substrate;
A tunnel barrier layer located on the crystalline first ferromagnetic layer and having a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer;
A crystalline second ferromagnetic layer made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, located on the tunnel barrier layer;
An intermediate layer located on the crystalline second ferromagnetic layer and made of a nonmagnetic material, and
A crystalline ferromagnetic layer located on the intermediate layer and made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, and Ni atoms, Fe atoms and B A magnetoresistive element having a third ferromagnetic layer having a crystalline ferromagnetic layer made of an alloy containing atoms or an alloy containing Ni atoms and Fe atoms.

A second aspect of the present invention is a process of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A method of manufacturing a magnetoresistive element having
The step of forming the tunnel barrier layer includes a step of forming a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer by a sputtering method,
The step of forming the magnetization free layer includes
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. Filming process,
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. It is a step of forming a laminated film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using It is a manufacturing method of a magnetoresistive element.

A third aspect of the present invention is a process of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A method of manufacturing a magnetoresistive element having
The step of forming the tunnel barrier layer includes forming a layer made of crystalline metal magnesium or a crystalline boron magnesium alloy by a sputtering method, oxidizing the metal magnesium or boron magnesium alloy, and forming a crystalline magnesium oxide layer. Or a step of forming a crystalline boron magnesium oxide layer,
The step of forming the magnetization free layer includes
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. Filming process,
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. It is a step of forming a laminated film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using It is a manufacturing method of a magnetoresistive element.

A fourth aspect of the present invention is a process of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A storage medium storing a control program for executing manufacture of a magnetoresistive element having
A control program for executing the step of forming the tunnel barrier layer and the magnetization free layer is as follows:
A step of forming a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer by a sputtering method using a target made of magnesium oxide or boron magnesium oxide;
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. A film forming step, and
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. Control program for executing a step of forming a layered film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using Is a storage medium characterized by storing.

A fifth aspect of the present invention is a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A storage medium storing a control program for executing manufacture of a magnetoresistive element having
A control program for executing the step of forming the tunnel barrier layer and the magnetization free layer is as follows:
A layer made of crystalline metal magnesium or a crystalline boron magnesium alloy is formed by sputtering using a target made of metal magnesium or a boron magnesium alloy, the metal magnesium or boron magnesium alloy is oxidized, and the crystalline magnesium oxide Forming a layer or a crystalline boron magnesium oxide layer,
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. A film forming step, and
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. Control program for executing a step of forming a layered film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using Is a storage medium characterized by storing.

  According to the present invention, the MR ratio achieved by a conventional tunnel magnetoresistive element (hereinafter referred to as a TMR element) can be greatly improved. Further, the present invention can be mass-produced and has high practicality. Therefore, by using the present invention, a memory element of MRAM (Magnetic Resistive Random Access Memory) capable of ultra-high integration can be efficiently provided. .

It is a cross-sectional schematic diagram of an example of the magnetoresistive element of this invention. It is a figure which shows typically the structure of an example of the film-forming apparatus which manufactures the magnetoresistive element of this invention. FIG. 3 is a block diagram of the apparatus of FIG. It is a model perspective view of MRAM comprised using the magnetoresistive element of this invention. It is an equivalent circuit diagram of MRAM comprised using the magnetoresistive element of this invention. It is sectional drawing of another tunnel barrier layer of this invention. It is a model perspective view of the columnar crystal structure concerning the magnetoresistive element of this invention. It is sectional drawing of the TMR element of the other structure of the magnetoresistive element of this invention.

  The magnetoresistive element of the present invention has a substrate, a crystalline first ferromagnetic layer, a tunnel barrier layer, a crystalline second ferromagnetic layer, a nonmagnetic intermediate layer, and a crystalline third ferromagnetic layer. The first ferromagnetic layer is made of an alloy containing Co atoms, Fe atoms, and B atoms (hereinafter referred to as CoFeB). The tunnel barrier layer includes a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer. Further, the second ferromagnetic layer is made of CoFeB or an alloy containing Co atoms and Fe atoms (hereinafter referred to as CoFe). The third ferromagnetic layer is composed of a crystalline ferromagnetic layer composed of a CoFe layer or a CoFeB layer, a crystalline strong layer composed of an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. It consists of a laminated film with a magnetic layer. In the following description, an alloy containing Ni atoms, Fe atoms and B atoms is referred to as NiFeB, and an alloy containing Ni atoms and Fe atoms is referred to as NiFe. Magnesium oxide is referred to as Mg oxide, boron magnesium oxide as BMg oxide, metallic magnesium as Mg, and boron magnesium alloy as BMg.

  Hereinafter, preferred embodiments of the present invention will be described in detail.

  FIG. 1 shows an example of the laminated structure of the magnetoresistive element 10 according to the present invention, and shows the laminated structure of the magnetoresistive element 10 using the TMR element 12. According to the magnetoresistive element 10, for example, a 12-layer multilayer film including the TMR element 12 is formed on the substrate 11. This 12-layer multilayer film has a multilayer film structure from the lowermost first layer (Ta layer) to the uppermost twelfth layer (Ru layer). Specifically, a PtMn layer 14, a CoFe layer 15, a nonmagnetic metal layer (Ru) layer 161, a CoFeB layer 121 as a first ferromagnetic layer, a nonmagnetic polycrystalline Mg oxide layer or BMg as a tunnel barrier layer An oxide layer 122 is stacked. Further thereon, a polycrystalline CoFe layer or CoFeB layer 1233 as a second ferromagnetic layer, a nonmagnetic Ta layer 162, a polycrystalline CoFe layer or CoFeB layer 1232 as a third ferromagnetic layer, and a polycrystalline NiFe layer or A NiFeB layer 1231 is stacked. Furthermore, the nonmagnetic Ta layer 17 and the nonmagnetic Ru layer 18 are laminated in this order. In addition, the numerical value in the bracket | parenthesis of each layer in a figure shows the thickness of each layer, and a unit is nm. The said thickness is an example and is not limited to this.

  In the present invention, the first ferromagnetic layer 121 described above may have a laminated structure of two or more layers in which a CoFeB layer and another ferromagnetic layer are added.

  Reference numeral 11 denotes a substrate such as a wafer substrate, a glass substrate, or a sapphire substrate.

  Reference numeral 12 denotes a TMR element, which is composed of a laminated structure of a first ferromagnetic layer 121 made of polycrystalline CoFeB, a tunnel barrier layer 122, a second ferromagnetic layer 1233, and third ferromagnetic layers 1232 and 1231. . The tunnel barrier layer 122 has a polycrystalline Mg oxide layer or a polycrystalline BMg oxide layer, and the second ferromagnetic layer 1232 is made of a polycrystalline CoFe layer or a polycrystalline CoFeB layer. The third ferromagnetic layer is composed of a multilayer film of a polycrystalline CoFe layer or CoFeB layer 1232 and a polycrystalline NiFe layer or NiFeB layer 1231.

  An intermediate layer 162 made of a nonmagnetic material such as a nonmagnetic metal or a nonmagnetic insulator is disposed between the second ferromagnetic layer 1233 and the third ferromagnetic layer 1232.

  According to the present invention, the polycrystalline CoFe can contain a small amount of other atoms such as Pt (5 atomic% or less, preferably 0.01 to 1 atomic%).

  Reference numeral 13 denotes a lower electrode layer (underlayer) of the first layer (Ta layer), and reference numeral 14 denotes an antiferromagnetic layer of the second layer (PtMn layer). 15 is a ferromagnetic layer of the third layer (CoFe layer), and 161 is a nonmagnetic layer for exchange coupling of the fourth layer (Ru layer).

  The fifth layer is a ferromagnetic layer made of the crystalline CoFeB layer 121. The B atom content (hereinafter referred to as B content) in the crystalline CoFeB layer 121 is preferably set in the range of 0.1 atomic% to 60 atomic%, more preferably 10 atomic% to 50 atomic%.

  In the present invention, the crystalline CoFeB layer 121 can contain other atoms such as Pt, Ni, Mn and the like in a trace amount (5 atomic% or less, preferably 0.01 to 1 atomic%).

  The layer composed of the third layer, the fourth layer, and the fifth layer described above is a magnetization fixed layer 19. The substantial magnetization fixed layer 19 is a ferromagnetic layer of the fifth crystalline CoFeB layer 121.

  A tunnel barrier layer 122 is a sixth layer (polycrystalline Mg oxide layer or BMg oxide layer), and is an insulating layer. The tunnel barrier layer 122 may be a single polycrystalline Mg oxide layer or a polycrystalline BMg oxide layer.

  Further, according to the present invention, the tunnel barrier layer 122 can be configured as shown in FIG. That is, a stacked structure of a polycrystalline Mg oxide layer or polycrystalline BMg oxide layer 1221, a polycrystalline Mg layer or polycrystalline BMg layer 1222, and a polycrystalline Mg oxide layer or polycrystalline BMg oxide layer 1223. Furthermore, a laminated structure in which a plurality of three layers including the laminated films 1221, 1222 and 1223 illustrated in FIG. 6 are provided may be used.

  FIG. 8 is an example of another TMR element 12 of the present invention. Reference numerals 12, 121, 122, 162, and 1231 to 1233 in FIG. 8 are the same members as described above. In this example, the tunnel barrier layer 122 is a laminated film including a polycrystalline Mg oxide layer or polycrystalline BMg oxide layer 82 and Mg layers or BMg layers 81 and 83 on both sides of the layer 82. In the present invention, the use of the layer 81 can be omitted, and the layer 82 can be disposed adjacent to the crystalline CoFe layer or the crystalline CoFeB layer 1233. Alternatively, the use of the layer 83 can be omitted and the layer 82 can be disposed adjacent to the crystalline CoFeB layer 121.

  FIG. 7 is a schematic perspective view of a polycrystalline structure composed of a BMg oxide layer or an aggregate 71 of columnar crystals 72 of the Mg oxide layer. The polycrystalline structure also includes a structure of a polycrystalline-amorphous mixed region including a partial amorphous region in the polycrystalline region. The columnar crystal is preferably a single crystal having a (001) crystal plane preferentially oriented in the film thickness direction for each column. The average diameter of the columnar single crystal is preferably 10 nm or less, more preferably in the range of 2 nm to 5 nm, and the film thickness is preferably 10 nm or less, more preferably 0.5 nm. It is in the range of 5 nm.

Further, the BMg oxide used in the present invention has a general formula B _x Mg _y O _z (0.7 ≦ Z / (X + Y) ≦ 1.3, preferably 0.8 ≦ Z / (X + Y) <. 1.0). In the present invention, it is preferable to use a stoichiometric amount of BMg oxide, but a high MR ratio can be obtained even with an oxygen-deficient BMg oxide.

The Mg oxide used in the present invention has a general formula Mg _y O _z (0.7 ≦ Z / Y ≦ 1.3, preferably 0.8 ≦ Z / Y <1.0). Indicated by In the present invention, it is preferable to use a stoichiometric amount of Mg oxide, but even with an oxygen-deficient Mg oxide, a high MR ratio can be obtained.

  The polycrystalline Mg oxide or polycrystalline BMg oxide used in the present invention contains various trace components such as Zn atom, C atom, Al atom, Ca atom, Si atom, etc. in the range of 10 ppm to 100 ppm. Can do.

  The seventh layer, the ninth layer, and the tenth layer are respectively a ferromagnetic layer made of a crystalline CoFe layer or a CoFeB layer 1233, a ferromagnetic layer made of a crystalline CoFe layer or a CoFeB layer 1232, a crystalline NiFe layer, or This is a ferromagnetic layer made of a NiFeB layer. The laminated film including the seventh layer, the ninth layer, and the tenth layer can function as a magnetization free layer.

In the present invention, an eighth Ta layer 162 which is an intermediate layer made of a nonmagnetic material is disposed between the seventh layer and the ninth layer. The eighth layer is made of nonmagnetic metal such as Ru or Ir, nonmagnetic insulator such as Al ₂ O ₃ (aluminum oxide), SiO ₂ (silicon oxide) or Si ₃ N ₄ (silicon nitride) in addition to Ta. Can be used. Further, the film thickness can be set in a range of preferably 50 nm or less, more preferably 5 nm to 40 nm.

  The crystalline CoFe layer or the crystalline CoFeB layer 1232 constituting the seventh layer and the ninth layer can be formed by sputtering using a CoFe target or a CoFeB target.

  The crystalline NiFe layer or the crystalline NiFeB layer 1231 constituting the tenth layer can be formed by sputtering using a NiFe target or a NiFeB target.

  The crystalline CoFeB layer 121, the CoFe layers or CoFeB layers 1233 and 1232, and the NiFe layer or NiFeB layer 1231 have the same crystal structure as the aggregate 71 composed of the columnar crystal structure 72 shown in FIG. It may be.

  The crystalline CoFeB layer 121 and the CoFe layer or CoFeB layer 1233 are preferably provided adjacent to the tunnel barrier layer 122 located in the middle. In the manufacturing apparatus, these three layers are sequentially laminated without breaking the vacuum.

  Reference numeral 17 denotes an electrode layer of the tenth layer (Ta layer).

  Reference numeral 18 denotes an eleventh layer (Ru layer) hard mask layer. The eleventh layer may be removed from the magnetoresistive element when used as a hard mask.

  Next, with reference to FIG. 2, an apparatus and a manufacturing method for manufacturing the magnetoresistive element 10 having the above laminated structure will be described. FIG. 2 is a schematic plan view of an apparatus for manufacturing the magnetoresistive element 10, which is an apparatus capable of producing a multilayer film including a plurality of magnetic layers and a nonmagnetic layer, and is a mass production type sputtering film formation. Device.

  The magnetic multilayer film manufacturing apparatus 200 shown in FIG. 2 is a cluster type manufacturing apparatus and includes three film forming chambers based on a sputtering method. In this apparatus 200, a transfer chamber 202 provided with a robot transfer apparatus (not shown) is installed at a central position. Two load lock / unload lock chambers 205 and 206 are provided in the transfer chamber 202 of the manufacturing apparatus 200 for manufacturing the magnetoresistive element, and the substrate (for example, silicon substrate) 11 is carried in and out, respectively. . By alternately loading and unloading the substrate between these load lock / unload lock chambers 205 and 206, the tact time is shortened and a magnetoresistive element can be manufactured with high productivity.

  In the manufacturing apparatus 200 for manufacturing a magnetoresistive element, three film forming magnetron sputtering chambers 201 </ b> A to 201 </ b> C and one etching chamber 203 are provided around a transfer chamber 202. In the etching chamber 203, a required surface of the TMR element 10 is etched. A gate valve 204 that can be opened and closed is provided between each of the chambers 201A to 201C and 203 and the transfer chamber 202. Each chamber 201A to 201C and 202 is provided with an unillustrated evacuation mechanism, gas introduction mechanism, power supply mechanism, and the like. The magnetron sputtering chambers 201A to 201C for film formation can sequentially deposit each film from the first layer to the eleventh layer on the substrate 11 without breaking the vacuum using a high frequency sputtering method. it can.

  Four or five cathodes 31 to 35, 41 to 45, 51 to 54 are arranged on an appropriate circumference on the ceiling of the magnetron sputtering chambers 201A to 201C for film formation. Further, the substrate 11 is disposed on a substrate holder located coaxially with the circumference. Further, a magnetron sputtering apparatus in which a magnet is disposed behind the targets mounted on the cathodes 31 to 35, 41 to 45, 51 to 54 is preferable.

  In the apparatus, high-frequency power such as a radio frequency (RF frequency) is applied to the cathodes 31 to 35, 41 to 45, 51 to 54 from the power input means 207A to 207C. As the high frequency power, a frequency in the range of 0.3 MHz to 10 GHz, preferably a frequency in the range of 5 MHz to 5 GHz and a power in the range of 10 W to 500 W, preferably in the range of 100 W to 300 W can be used.

  In the above, for example, a Ta target is attached to the cathode 31, a PtMn target is attached to the cathode 32, a CoFeB target is attached to the cathode 33, a CoFe target is attached to the cathode 34, and a Ru target is attached to the cathode 35.

  The cathode 51 is provided with an Mg oxide target, the cathode 52 is provided with a BMg oxide target, the cathode 53 is provided with an Mg target, and the cathode 54 is provided with a BMg target. The TMR element 122 having the structure shown in FIG. 8 can be manufactured by using the cathode 53 or 54.

  The cathode 41 has a CoFe target for the ninth layer, the cathode 42 has a CoFeB target for the seventh layer, the cathode 43 has Ta targets for the eighth and eleventh layers, Is equipped with a Ru target for the 12th layer. The cathode 45 is mounted with a NiFe target or a NiFeB target for the tenth layer.

  The in-plane directions of the targets mounted on the cathodes 31 to 35, 41 to 45, and 51 to 54 are preferably arranged in non-parallel to each other. By using the non-parallel arrangement, sputtering can be performed while rotating a target having a diameter smaller than the substrate diameter, so that a magnetic film and a nonmagnetic film having the same composition as the target composition can be deposited.

  In the non-parallel arrangement, for example, they can be arranged non-parallel so that the crossing angle between the target central axis and the substrate central axis is 45 ° or less, preferably 5 ° to 30 °. Further, the substrate at this time can use a rotation speed of 10 rpm to 500 rpm, preferably a rotation speed of 50 rpm to 200 rpm.

  In addition, as the crystalline Mg oxide layer, a crystalline (preferably polycrystalline) Mg layer is formed by a sputtering method using an Mg target, and the Mg is placed in an oxidizing gas introduction chamber (not shown). It can be obtained by oxidation with.

  The crystalline BMg oxide layer is formed by depositing a crystalline (preferably polycrystalline) BMg layer by sputtering using a BMg target, and depositing the BMg in an oxidizing gas introduction chamber (not shown). It can be obtained by oxidation with.

  Examples of the oxidizing gas include oxygen gas, ozone gas, and water vapor.

  FIG. 3 is a block diagram of a film forming apparatus used in the present invention. In the figure, 301 is a transfer chamber corresponding to the transfer chamber 202 in FIG. 2, 302 is a film forming chamber corresponding to the film forming magnetron sputtering chamber 201A, and 303 is a film forming chamber corresponding to the film forming magnetron sputtering chamber 201B. is there. Reference numeral 304 denotes a film forming chamber corresponding to the film forming magnetron sputtering chamber 201C, and reference numeral 305 denotes a load lock / unload lock chamber corresponding to the load lock / unload lock chambers 205 and 206. Reference numeral 306 denotes a central processing unit (CPU) having a built-in storage medium 312. Reference numerals 309 to 311 denote bus lines that connect the CPU 306 and the processing chambers 301 to 305, and control signals for controlling the operations of the processing chambers 301 to 305 are transmitted from the CPU 306 to the processing chambers 301 to 305.

  In the present invention, a substrate (not shown) in the load lock / unload lock chamber 305 is carried out to the transfer chamber 301. This substrate unloading step is calculated based on a control program stored in the storage medium 312 by the CPU 306. A control signal based on the calculation result is implemented by controlling the execution of various apparatuses mounted in the load lock / unload lock chamber 305 and the transfer chamber 301 through the bus lines 307 and 311. Examples of the various devices include a gate valve (not shown), a robot mechanism, a transport mechanism, and a drive system.

  The substrate transferred to the transfer chamber 301 is transferred to the film formation chamber 302. The substrates carried into the film forming chamber 302 are the first layer (Ta layer 13), the second layer (PtMn layer 14), the third layer (CoFe layer 15), and the fourth layer (Ru layer) in FIG. 161) and the fifth layer (CoFeB layer 121) are sequentially stacked. The fifth CoFeB layer 121 at this stage preferably has an amorphous structure, but may have a polycrystalline structure.

  In the above-described stacking, a control signal calculated based on a control program stored in the storage medium 312 in the CPU 306 executes various apparatuses mounted on the transfer chamber 301 and the film forming chamber 302 through the bus lines 307 and 308. It is implemented by controlling. Examples of the various devices include a power supply mechanism to a cathode (not shown), a substrate rotation mechanism, a gas introduction mechanism, an exhaust mechanism, a gate valve, a robot mechanism, a transport mechanism, and a drive system.

  The substrate having the laminated film up to the fifth layer is once returned to the transfer chamber 301 and then transferred into the film formation chamber 303.

  In the film forming chamber 303, a polycrystalline Mg oxide layer or a polycrystalline BMg oxide layer 122 is formed as a sixth layer on the fifth amorphous CoFeB 121 layer. In the film formation, control signals calculated based on the control program stored in the storage medium 312 in the CPU 306 are executed by various apparatuses mounted on the transfer chamber 301 and the film formation chamber 303 through the bus lines 307 and 309. It is implemented by controlling. Examples of the various devices include a power supply mechanism to a cathode (not shown), a substrate rotation mechanism, a gas introduction mechanism, an exhaust mechanism, a gate valve, a robot mechanism, a transport mechanism, and a drive system.

  The substrate having the laminated film up to the sixth Mg oxide layer or BMg oxide layer 122 is once again returned to the transfer chamber 301 and then transferred into the film formation chamber 304.

  In the deposition chamber 304, on the sixth layer 122, a seventh layer (CoFe layer or CoFeB layer 1233), an eighth layer (Ta layer 162), a ninth layer (CoFe layer or CoFe layer 1232), Ten layers (NiFe layer or NiFeB layer 1231) are laminated. Next, an eleventh layer (Ta layer 17) and a twelfth layer (Ru layer 18) are sequentially stacked. At this stage, the seventh CoFe layer or CoFeB layer 1233, the ninth CoFe layer or CoFeB layer 1232 and the tenth NiFe layer or NiFeB layer 1231 preferably have an amorphous structure. It may be a structure.

  In the above-described stacking, the control signals calculated based on the control program stored in the storage medium 312 in the CPU 306 execute various apparatuses mounted on the transfer chamber 301 and the film forming chamber 304 through the bus lines 307 and 310. It is implemented by controlling. Examples of the various devices include a power supply mechanism to a cathode (not shown), a substrate rotation mechanism, a gas introduction mechanism, an exhaust mechanism, a gate valve, a robot mechanism, a transport mechanism, and a drive system.

  The eighth Ta layer 162 and the eleventh Ta layer 17 are formed using the same target attached to the cathode 54.

  The storage medium 312 is a storage medium of the present invention, and a control program for executing manufacture of the magnetoresistive element is stored in the storage medium.

  Examples of the storage medium 312 used in the present invention include a hard disk medium, a magneto-optical disk medium, a floppy (registered trademark) disk medium, and a nonvolatile memory such as a flash memory and an MRAM. .

  Further, the present invention provides the fifth layer (CoFeB layer 121), the seventh layer and the ninth layer (CoFe layer or CoFeB layer 1233, 1232) and the tenth layer (NiFe layer or NiFeB layer 1231) immediately after film formation. The amorphous state can be crystallized by annealing. As a result, the polycrystalline structure shown in FIG. 7 can be obtained. For this reason, in the present invention, the magnetoresistive element 10 immediately after film formation is carried into an annealing furnace (not shown), where the fifth layer 121, the seventh layer 1233, the ninth layer 1232, and the tenth layer 1231 Amorphous state can be changed to crystalline state.

  At this time, magnetism can be imparted to the PtMn layer 14 as the second layer.

  The storage medium 312 stores a control program for performing the process in the annealing furnace. Therefore, various devices in the annealing furnace (not shown, for example, a heater mechanism, an exhaust mechanism, a transport mechanism, etc.) are controlled by the control signal obtained by the calculation of the CPU 306 based on the control program, and the annealing process is executed. Can do.

  In the present invention, an Rh layer or an Ir layer can be used instead of the Ru layer of the fourth layer 161.

  In the present invention, an alloy layer such as an IrMn layer, an IrMnCr layer, a NiMn layer, a PdPtMn layer, a RuRhMn layer, or an OsMn layer is preferably used instead of the second PtMn14 layer. The film thickness is preferably 10 to 30 nm.

  FIG. 4 is a schematic diagram of an MRAM 401 using the magnetoresistive element of the present invention as a memory element. In the MRAM 401, 402 is a memory element of the present invention, 403 is a word line, and 404 is a bit line. Each of the large number of memory elements 402 is arranged at each intersection position of a plurality of word lines 403 and a plurality of bit lines 404, and is arranged in a lattice-like positional relationship. Each of the large number of memory elements 402 can store 1-bit information.

  FIG. 5 is an equivalent circuit diagram including the TMR element 10 that stores 1-bit information and the transistor 501 having a switch function at the intersection of the word line 403 and the bit line 404 of the MRAM 401.

  The magnetoresistive element shown in FIG. 1 was produced using the film forming apparatus shown in FIG. The film forming conditions of the TMR element 12 which is the main part are as follows.

  The CoFeB layer 121 uses a target having a CoFeB composition ratio (atomic ratio) of 60/20/20, Ar is a sputtering gas, and its pressure is 0.03 Pa. The CoFeB layer 121 was formed by magnetron DC sputtering (chamber 201A) at a sputtering rate of 0.64 nm / sec. At this time, the CoFeB layer 121 had an amorphous structure.

  Subsequently, the tunnel barrier layer 122 was formed using an MgO target with an MgO composition ratio (atomic ratio) of 50/50 instead of the sputtering apparatus (chamber 201C). Ar was used as a sputtering gas, and a Mg oxide layer was formed by magnetron RF sputtering (13.56 MHz) using a pressure of 0.2 Pa in a pressure range of 0.01 to 0.4 Pa. At this time, the Mg oxide layer had a polycrystalline structure composed of the aggregate 71 of columnar crystals 72 shown in FIG. Further, the deposition rate of magnetron RF sputtering (13.56 MHz) at this time was 0.14 nm / sec.

  Further, the substrate is introduced into the sputtering apparatus (chamber 201B), and the magnetization free layer (the seventh CoFeB layer 1233, the eighth Ta layer 162, the ninth CoFe layer 1232, and the tenth NiFe layer 1231). ) Was formed.

  The CoFeB layer 1233, the CoFe layer 1232, and the NiFe layer 1231 were formed at a sputtering rate of 0.64 nm / sec by magnetron DC sputtering (chamber 201B) using Ar as a sputtering gas and a pressure of 0.03 Pa. At this time, targets having a CoFeB composition ratio (atomic) 25/25/50, a CoFe composition ratio (atomic) 50/50, and a NiFe composition ratio (atomic) 40/60 were used. Immediately after the film formation, the CoFeB layer 1233, the CoFe layer 1232, and the NiFe layer 1231 had an amorphous structure.

  In this example, the deposition rate of the Mg oxide layer was 0.14 nm / sec, but there is no problem even if it is deposited in the range of 0.01 nm to 1.0 nm / sec.

  The magnetoresistive element 10 that has been laminated by performing sputtering film formation in each of the magnetron sputtering chambers 201A, 201B, and 201C for film formation is annealed in a heat treatment furnace in a magnetic field of 8 kOe at about 300 ° C. for 4 hours. Carried out. As a result, it was confirmed that the CoFeB layer 121, the BoFeB layer 1233, the CoFe layer 1232, and the NiFe layer 1231 having an amorphous structure had a polycrystalline structure composed of the aggregates 71 of the columnar crystals 72 illustrated in FIG.

  By this annealing step, the magnetoresistive element 10 can act as a magnetoresistive element having a TMR effect. Also, by this annealing step, predetermined magnetization was imparted to the antiferromagnetic material layer 14 which is the second PtMn layer.

  As a comparative example, a magnetoresistive element was formed using the same method as in the above example except that the use of the eighth Ta layer 162, the ninth CoFe layer 1232, and the tenth NiFe layer 1231 was omitted. Was made.

  When the MR ratio between the magnetoresistive element of the example and the magnetoresistive element of the comparative example was measured and compared, the MR ratio of the magnetoresistive element of the example was compared with the MR ratio of the magnetoresistive element of the comparative example. It was improved by a numerical value of 2 times to 1.5 times or more.

  The MR ratio is a parameter related to the magnetoresistive effect in which the electric resistance of the film also changes as the magnetization direction of the magnetic film or the magnetic multilayer film changes in response to an external magnetic field. Rate (MR ratio).

  Further, in the above example, a magnetoresistive element was manufactured using the same method except that the seventh CoFeB layer 1233 was changed to CoFe (atomic composition ratio 50/50). Similar effects were obtained.

  In the above example, a magnetoresistive element was fabricated using the same method except that the ninth CoFe layer 1232 was changed to CoFeB (atomic composition ratio: 50/30/20). The same effect as in the example was obtained.

  Further, in the above example, a magnetoresistive element was produced using the same method except that the 10th NiFe layer 1231 was changed to NiFeB (atomic composition ratio; 50/30/20). The same effect as in the example was obtained.

  Further, a magnetoresistive element was fabricated in exactly the same manner except that a polycrystalline BMg oxide layer was used as the sixth layer instead of the sixth polycrystalline Mg oxide layer used in the above-described embodiment. The MR ratio was measured. A BMgO target having a BMgO composition ratio (atomic ratio) of 25/25/50 was used, and the film formation rate was 0.14 nm / sec. As a result, as compared with the example using the polycrystalline Mg oxide layer described above, the MR ratio significantly improved compared to the example using the polycrystalline Mg oxide layer (1. MR ratio of 5 times or more) was obtained.

  Further, as a comparative example, a magnetoresistive element was fabricated using the same method as in the above example except that the CoFeB layer 121 of the magnetization fixed layer was changed to a CoFe (atomic composition ratio; 50/50) layer. MR ratio was measured. As a result, the measurement result was as low as 1/100 or less of the MR ratio obtained by the magnetoresistive element of the present invention.

  10: magnetoresistive element, 11: substrate, 12: TMR element, 121: CoFeB ferromagnetic layer (fifth layer), 122: tunnel barrier layer (sixth layer), 1231: NiFe / NiFeB ferromagnetic layer (first layer) 10 layers; magnetization free layer), 1232: CoFe / CoFeB ferromagnetic layer (9th layer; magnetization free layer), 1233: CoFeB / CoFeB ferromagnetic layer (seventh layer; magnetization free layer), 13: lower electrode Layer (first layer; underlayer), 14: antiferromagnetic layer (second layer), 15: ferromagnetic layer (third layer), 161: nonmagnetic layer for exchange coupling (fourth layer), 162: Nonmagnetic intermediate layer (eighth layer), 17: upper electrode layer (11th layer), 18: hard mask layer (12th layer), 19: magnetization fixed layer, 200: magnetoresistive element creation apparatus, 201A to 201C: Deposition chamber 202: Transfer chamber 203: Etch Chamber, 204: Gate valve, 205, 206: Load lock / unload lock chamber, 31 to 35, 41 to 45, 51 to 54: Cathode, 207A to 207C: Power supply unit, 301: Transfer chamber, 302 to 304: Deposition chamber, 305: Load lock / unload lock chamber, 306: Central processing unit (CPU), 307 to 311: Bus line, 312: Storage medium, 401: MRAM, 402: Memory element, 403: Word line, 404 : Bit line, 501: transistor, 71: aggregate of columnar crystal group, 72: columnar crystal, 81: Mg layer or BMg layer, 82: Mg oxide layer or BMg oxide layer, 83: Mg layer or BMg layer

The first of the present invention is a substrate,
A crystalline first ferromagnetic layer made of an alloy containing Co atoms, Fe atoms and B atoms located on the substrate;
A tunnel barrier layer located on the crystalline first ferromagnetic layer and having a crystalline boron magnesium oxide layer of the following general formula ;
A crystalline second ferromagnetic layer made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, located on the tunnel barrier layer;
An intermediate layer located on the crystalline second ferromagnetic layer and made of a nonmagnetic material, and
A crystalline ferromagnetic layer located on the intermediate layer and made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, and Ni atoms, Fe atoms and B A magnetoresistive element having a third ferromagnetic layer having a crystalline ferromagnetic layer made of an alloy containing atoms or an alloy containing Ni atoms and Fe atoms.
General formula
B _x Mg _y O _z
(However, X, Y, and Z satisfy the relationship 0.8 ≦ Z / (X + Y) <1.0)

A second aspect of the present invention is a process of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A method of manufacturing a magnetoresistive element having
The step of forming the tunnel barrier layer has a step of forming a crystalline boron magnesium oxide layer of the following general formula by a sputtering method,
The step of forming the magnetization free layer includes
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. Filming process,
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. It is a step of forming a laminated film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using It is a manufacturing method of a magnetoresistive element.
General formula
B _x Mg _y O _z
(However, X, Y, and Z satisfy the relationship 0.8 ≦ Z / (X + Y) <1.0)

A third aspect of the present invention is a process of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A method of manufacturing a magnetoresistive element having
Step of forming the tunnel barrier layer by a sputtering method, a layer made of a sintered-crystalline boron magnesium alloy is deposited, by oxidizing 該Bo Ron magnesium alloy, crystalline boron magnesium oxide layer having the following general formula Having a step of forming
The step of forming the magnetization free layer includes
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. Filming process,
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. It is a step of forming a laminated film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using It is a manufacturing method of a magnetoresistive element.
General formula
B _x Mg _y O _z
(However, X, Y, and Z satisfy the relationship 0.8 ≦ Z / (X + Y) <1.0)

A fourth aspect of the present invention is a process of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A storage medium storing a control program for executing manufacture of a magnetoresistive element having
A control program for executing the step of forming the tunnel barrier layer and the magnetization free layer is as follows:
By a sputtering method using a target made of borate Ron magnesium oxide, a step of forming a crystalline boron magnesium oxide layer having the following general formula,
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. A film forming step, and
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. Control program for executing a step of forming a layered film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using Is a storage medium characterized by storing.
General formula
B _x Mg _y O _z
(However, X, Y, and Z satisfy the relationship 0.8 ≦ Z / (X + Y) <1.0)

A fifth aspect of the present invention is a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate by using a sputtering method. A storage medium storing a control program for executing manufacture of a magnetoresistive element having
A control program for executing the step of forming the tunnel barrier layer and the magnetization free layer is as follows:
By a sputtering method using a target made of borate Ron magnesium alloy, a layer made of a sintered-crystalline boron magnesium alloy is deposited, by oxidizing 該Bo Ron magnesium alloy, the crystalline boron magnesium oxide layer having the following general formula Forming step,
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. A film forming step, and
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. Control program for executing a step of forming a layered film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using Is a storage medium characterized by storing.
General formula
B _x Mg _y O _z
(However, X, Y, and Z satisfy the relationship 0.8 ≦ Z / (X + Y) <1.0)

Claims (6)

substrate,
A crystalline first ferromagnetic layer made of an alloy containing Co atoms, Fe atoms and B atoms located on the substrate;
A tunnel barrier layer located on the crystalline first ferromagnetic layer and having a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer;
A crystalline second ferromagnetic layer made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, located on the tunnel barrier layer;
An intermediate layer located on the crystalline second ferromagnetic layer and made of a nonmagnetic material, and
A crystalline ferromagnetic layer located on the intermediate layer and made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms, and Ni atoms, Fe atoms and B A magnetoresistive element comprising a third ferromagnetic layer having a crystalline ferromagnetic layer made of an alloy containing atoms or an alloy containing Ni atoms and Fe atoms.   The magnetoresistive element according to claim 1, wherein the nonmagnetic material is a nonmagnetic metal or a nonmagnetic insulator. Production of magnetoresistive element having a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate using a sputtering method A method,
The step of forming the tunnel barrier layer includes a step of forming a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer by a sputtering method,
The step of forming the magnetization free layer includes
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. Filming process,
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. It is a step of forming a laminated film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using A method of manufacturing a magnetoresistive element. Production of magnetoresistive element having a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate using a sputtering method A method,
The step of forming the tunnel barrier layer includes forming a layer made of crystalline metal magnesium or a crystalline boron magnesium alloy by a sputtering method, oxidizing the metal magnesium or boron magnesium alloy, and forming a crystalline magnesium oxide layer. Or a step of forming a crystalline boron magnesium oxide layer,
The step of forming the magnetization free layer includes
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. Filming process,
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. It is a step of forming a laminated film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using A method of manufacturing a magnetoresistive element. Production of magnetoresistive element having a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate using a sputtering method A storage medium storing a control program for executing
A control program for executing the step of forming the tunnel barrier layer and the magnetization free layer is as follows:
A step of forming a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer by a sputtering method using a target made of magnesium oxide or boron magnesium oxide;
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. A film forming step, and
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. Control program for executing a step of forming a layered film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using A storage medium characterized by storing. Production of magnetoresistive element having a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer positioned between the magnetization fixed layer and the magnetization free layer on a substrate using a sputtering method A storage medium storing a control program for executing
A control program for executing the step of forming the tunnel barrier layer and the magnetization free layer is as follows:
A layer made of crystalline metal magnesium or a crystalline boron magnesium alloy is formed by sputtering using a target made of metal magnesium or a boron magnesium alloy, the metal magnesium or boron magnesium alloy is oxidized, and the crystalline magnesium oxide Forming a layer or a crystalline boron magnesium oxide layer,
Co atoms, Fe atoms, and B atoms are adjoined to the tunnel barrier layer by sputtering using a target comprising an alloy containing Co atoms, Fe atoms and B atoms, or an alloy containing Co atoms and B atoms. Forming a layer comprising an alloy containing or an alloy containing Co atoms and B atoms,
A nonmagnetic intermediate layer is formed adjacent to the alloy containing Co atoms, Fe atoms and B atoms or the alloy containing Co atoms and B atoms by sputtering using a target made of a nonmagnetic material. A film forming step, and
Co atoms, Fe atoms and B atoms are formed on the nonmagnetic intermediate layer by sputtering using a target made of an alloy containing Co atoms, Fe atoms and B atoms or an alloy containing Co atoms and Fe atoms. Or a target comprising an alloy containing Ni atoms, Fe atoms and B atoms, or an alloy containing Ni atoms and Fe atoms. Control program for executing a step of forming a layered film by forming a layer made of an alloy containing Ni atoms, Fe atoms and B atoms or an alloy containing Ni atoms and Fe atoms by sputtering using A storage medium characterized by storing.

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