JPWO2008047591A1 - Polyimide resin, polyimide varnish, and polyimide film - Google Patents
Polyimide resin, polyimide varnish, and polyimide film Download PDFInfo
- Publication number
- JPWO2008047591A1 JPWO2008047591A1 JP2007556444A JP2007556444A JPWO2008047591A1 JP WO2008047591 A1 JPWO2008047591 A1 JP WO2008047591A1 JP 2007556444 A JP2007556444 A JP 2007556444A JP 2007556444 A JP2007556444 A JP 2007556444A JP WO2008047591 A1 JPWO2008047591 A1 JP WO2008047591A1
- Authority
- JP
- Japan
- Prior art keywords
- polyimide resin
- bis
- film
- aminophenoxy
- polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 129
- 239000009719 polyimide resin Substances 0.000 title claims abstract description 123
- 239000004642 Polyimide Substances 0.000 title description 4
- 239000002966 varnish Substances 0.000 title description 3
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 9
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical group C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 125000000962 organic group Chemical group 0.000 claims abstract description 7
- 125000006268 biphenyl-3-yl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C1=C([H])C(*)=C([H])C([H])=C1[H] 0.000 claims abstract description 6
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 claims abstract description 6
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 claims abstract description 5
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 claims abstract description 5
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 claims description 2
- 239000011347 resin Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 30
- -1 Carboxylic acid dianhydride Chemical class 0.000 description 23
- 238000000034 method Methods 0.000 description 19
- 239000005001 laminate film Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 16
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 16
- 150000004985 diamines Chemical class 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- 150000008065 acid anhydrides Chemical class 0.000 description 14
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 14
- 238000003756 stirring Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 229920005575 poly(amic acid) Polymers 0.000 description 12
- 238000001035 drying Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 10
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000009477 glass transition Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 7
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- 239000005711 Benzoic acid Substances 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- DZDAJSJPMLXQKI-UHFFFAOYSA-N O(C1=CC=CC=C1)C1=C(C=CC(=C1C(=O)O)C(=O)O)C1=C(C(=C(C=C1)C(=O)O)C(=O)O)OC1=CC=CC=C1 Chemical compound O(C1=CC=CC=C1)C1=C(C=CC(=C1C(=O)O)C(=O)O)C1=C(C(=C(C=C1)C(=O)O)C(=O)O)OC1=CC=CC=C1 DZDAJSJPMLXQKI-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 4
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 4
- 238000001226 reprecipitation Methods 0.000 description 4
- 150000003462 sulfoxides Chemical class 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000012024 dehydrating agents Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- YLHUPYSUKYAIBW-UHFFFAOYSA-N 1-acetylpyrrolidin-2-one Chemical compound CC(=O)N1CCCC1=O YLHUPYSUKYAIBW-UHFFFAOYSA-N 0.000 description 2
- IWQSVMPGXSAKEG-UHFFFAOYSA-N 2-(4-aminophenyl)-1,3-benzothiazol-5-amine Chemical compound C1=CC(N)=CC=C1C1=NC2=CC(N)=CC=C2S1 IWQSVMPGXSAKEG-UHFFFAOYSA-N 0.000 description 2
- UMGYJGHIMRFYSP-UHFFFAOYSA-N 2-(4-aminophenyl)-1,3-benzoxazol-5-amine Chemical compound C1=CC(N)=CC=C1C1=NC2=CC(N)=CC=C2O1 UMGYJGHIMRFYSP-UHFFFAOYSA-N 0.000 description 2
- IBKFNGCWUPNUHY-UHFFFAOYSA-N 2-(4-aminophenyl)-1,3-benzoxazol-6-amine Chemical compound C1=CC(N)=CC=C1C1=NC2=CC=C(N)C=C2O1 IBKFNGCWUPNUHY-UHFFFAOYSA-N 0.000 description 2
- XAFOTXWPFVZQAZ-UHFFFAOYSA-N 2-(4-aminophenyl)-3h-benzimidazol-5-amine Chemical compound C1=CC(N)=CC=C1C1=NC2=CC=C(N)C=C2N1 XAFOTXWPFVZQAZ-UHFFFAOYSA-N 0.000 description 2
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 2
- DAAGSOMXYMQJBC-UHFFFAOYSA-N C1(=CC=CC=C1)C1=C(C=CC(=C1C(=O)O)C(=O)O)C1=C(C(=C(C=C1)C(=O)O)C(=O)O)C1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)C1=C(C=CC(=C1C(=O)O)C(=O)O)C1=C(C(=C(C=C1)C(=O)O)C(=O)O)C1=CC=CC=C1 DAAGSOMXYMQJBC-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- STIUJDCDGZSXGO-UHFFFAOYSA-N (3-amino-4-phenoxyphenyl)-(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C=C(N)C(OC=3C=CC=CC=3)=CC=2)=C1 STIUJDCDGZSXGO-UHFFFAOYSA-N 0.000 description 1
- GSHMRKDZYYLPNZ-UHFFFAOYSA-N (3-amino-4-phenoxyphenyl)-(4-amino-3-phenoxyphenyl)methanone Chemical compound NC1=CC=C(C(=O)C=2C=C(N)C(OC=3C=CC=CC=3)=CC=2)C=C1OC1=CC=CC=C1 GSHMRKDZYYLPNZ-UHFFFAOYSA-N 0.000 description 1
- PHPTWVBSQRENOR-UHFFFAOYSA-N (3-amino-4-phenoxyphenyl)-(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C(C=C1N)=CC=C1OC1=CC=CC=C1 PHPTWVBSQRENOR-UHFFFAOYSA-N 0.000 description 1
- VVSLEDQXFHBSTP-UHFFFAOYSA-N (3-amino-5-phenoxyphenyl)-(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC(N)=CC(OC=2C=CC=CC=2)=C1 VVSLEDQXFHBSTP-UHFFFAOYSA-N 0.000 description 1
- NILYJZJYFZUPPO-UHFFFAOYSA-N (4-amino-3-phenoxyphenyl)-(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C(OC=2C=CC=CC=2)=C1 NILYJZJYFZUPPO-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- NOGFHTGYPKWWRX-UHFFFAOYSA-N 2,2,6,6-tetramethyloxan-4-one Chemical compound CC1(C)CC(=O)CC(C)(C)O1 NOGFHTGYPKWWRX-UHFFFAOYSA-N 0.000 description 1
- MXPYJVUYLVNEBB-UHFFFAOYSA-N 2-[2-(2-carboxybenzoyl)oxycarbonylbenzoyl]oxycarbonylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(O)=O MXPYJVUYLVNEBB-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- ZMPZWXKBGSQATE-UHFFFAOYSA-N 3-(4-aminophenyl)sulfonylaniline Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=CC(N)=C1 ZMPZWXKBGSQATE-UHFFFAOYSA-N 0.000 description 1
- ZDBWYUOUYNQZBM-UHFFFAOYSA-N 3-(aminomethyl)aniline Chemical compound NCC1=CC=CC(N)=C1 ZDBWYUOUYNQZBM-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- FGWQCROGAHMWSU-UHFFFAOYSA-N 3-[(4-aminophenyl)methyl]aniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC(N)=C1 FGWQCROGAHMWSU-UHFFFAOYSA-N 0.000 description 1
- WPDPXBZAQIHEJM-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline;4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1.NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 WPDPXBZAQIHEJM-UHFFFAOYSA-N 0.000 description 1
- GBUNNYTXPDCASY-UHFFFAOYSA-N 3-[3-[2-[3-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(C=CC=2)C(C=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 GBUNNYTXPDCASY-UHFFFAOYSA-N 0.000 description 1
- LBPVOEHZEWAJKQ-UHFFFAOYSA-N 3-[4-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 LBPVOEHZEWAJKQ-UHFFFAOYSA-N 0.000 description 1
- UQHPRIRSWZEGEK-UHFFFAOYSA-N 3-[4-[1-[4-(3-aminophenoxy)phenyl]ethyl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 UQHPRIRSWZEGEK-UHFFFAOYSA-N 0.000 description 1
- PHVQYQDTIMAIKY-UHFFFAOYSA-N 3-[4-[1-[4-(3-aminophenoxy)phenyl]propyl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(CC)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 PHVQYQDTIMAIKY-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
- BDROEGDWWLIVJF-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]ethyl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(CCC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 BDROEGDWWLIVJF-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- TZFAMRKTHYOODK-UHFFFAOYSA-N 3-[4-[3-[4-(3-aminophenoxy)phenyl]propyl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(CCCC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 TZFAMRKTHYOODK-UHFFFAOYSA-N 0.000 description 1
- UCQABCHSIIXVOY-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 UCQABCHSIIXVOY-UHFFFAOYSA-N 0.000 description 1
- JERFEOKUSPGKGV-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfanylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(SC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 JERFEOKUSPGKGV-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- YSMXOEWEUZTWAK-UHFFFAOYSA-N 3-[4-[[4-(3-aminophenoxy)phenyl]methyl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(CC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 YSMXOEWEUZTWAK-UHFFFAOYSA-N 0.000 description 1
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
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- BFWYZZPDZZGSLJ-UHFFFAOYSA-N 4-(aminomethyl)aniline Chemical compound NCC1=CC=C(N)C=C1 BFWYZZPDZZGSLJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/04—Reinforcing macromolecular compounds with loose or coherent fibrous material
- C08J5/06—Reinforcing macromolecular compounds with loose or coherent fibrous material using pretreated fibrous materials
- C08J5/08—Reinforcing macromolecular compounds with loose or coherent fibrous material using pretreated fibrous materials glass fibres
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
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Abstract
【課題】有機溶剤に易溶でかつ耐熱性が高く、フィルムにした時の線膨張係数が低い、低温での加工が可能な、電気電子部品、配線基板を構成する材料として、特に加工性や高寸法安定性が必要とされる部位に好適に利用されるポリイミド樹脂、該樹脂溶液及び該樹脂フィルムを提供すること。【解決手段】下記の一般式(1A)及び一般式(1B)の少なくともいずれかで表される繰り返し単位を含むポリイミド樹脂。(式中、R1はフェニル、3−ビフェニル、4−ビフェニル、1−ナフチル、2−ナフチルのいずれかの基を示す。Azはベンズアゾール構造を有する2価の有機基を示す。)【化1】【選択図】なしAs a material constituting an electronic component or a wiring board, which is easily soluble in an organic solvent, has high heat resistance, has a low coefficient of linear expansion when formed into a film, and can be processed at low temperatures, To provide a polyimide resin, the resin solution, and the resin film that are suitably used in a site where high dimensional stability is required. A polyimide resin comprising a repeating unit represented by at least one of the following general formula (1A) and general formula (1B). (In the formula, R1 represents any one of phenyl, 3-biphenyl, 4-biphenyl, 1-naphthyl, and 2-naphthyl. Az represents a divalent organic group having a benzazole structure.) ] [Selection figure] None
Description
本発明は、電気電子部品、配線基板を構成する材料として、特に耐熱性や高寸法安定性が必要とされる部位に好適に利用される、ポリイミド樹脂及びポリイミド樹脂ワニス及びポリイミド樹脂フィルムに関する。 The present invention relates to a polyimide resin, a polyimide resin varnish, and a polyimide resin film, which are preferably used as a material for constituting an electric / electronic component and a wiring board, particularly for a portion requiring heat resistance and high dimensional stability.
ポリイミド樹脂は、優れた耐熱性、機械特性、電気特性を持つため、電気電子産業分野で広く利用されてきた。特に、フレキシブルな配線基板としての利用が目立ち、このようなポリイミド樹脂としては、4,4’−ジアミノジフェニルエーテルとピロメリット酸二無水物とから得られるポリイミド樹脂やp−フェニレンジアミンと3,3’、4,4’ビフェニルテトラカルボン酸二無水物とから得られるポリイミド樹脂がよく知られている(例えば、非特許文献1参照)
一方、近年の電子機器の高機能化や小型化に伴って配線基板の薄型化、多層化が急速に進行しており、ポリイミド樹脂に対しても更なる高性能化が要求されるようになってきた。例えば、金属の線膨張係数に近い、すなわち低線膨張係数を有するようなポリイミド樹脂が望まれている。これは、配線基板において金属配線層と樹脂基板との間の熱膨張差が大きいと、昇温、降温過程において熱応力が発生し、反りやクラックなどの不具合を引き起こす可能性があるからである。 On the other hand, with the recent increase in functionality and miniaturization of electronic devices, wiring boards are rapidly becoming thinner and multilayered, and higher performance is required for polyimide resins. I came. For example, a polyimide resin that is close to the linear expansion coefficient of metal, that is, has a low linear expansion coefficient, is desired. This is because if the thermal expansion difference between the metal wiring layer and the resin substrate is large in the wiring substrate, thermal stress is generated in the temperature rising / falling process, which may cause problems such as warpage and cracks. .
低線膨張係数を有するポリイミド樹脂としては、上記記載のp−フェニレンジアミンと3,3’、4,4’−ビフェニルテトラカルボン酸二無水物とから得られるポリイミド樹脂などが挙げられ、これに代表されるように、剛直な主鎖構造を持ち、有機溶剤に溶けにくいものが多い。従って、このようなポリイミド樹脂を加工する場合には、前駆体である可溶性のポリアミド酸の状態で加工し、次いでそれを脱水閉環してイミド化するという手法がとられることが多い(例えば、非特許文献2参照)。しかし、この手法では、イミド化に350℃以上の高温を要する上に、イミド化時に発生する水によりボイドやクラックが発生し、配線基板等に不良をもたらすという問題がある。
上記問題を解決する手法として、比較的剛直な主鎖構造を有しながら、有機溶媒に可溶であるようなポリイミド樹脂の開発が挙げられる。その例として、p−フェニレンジアミンと2、2’−ジフェノキシ−3,3’、4,4’−ビフェニルテトラカルボン酸二無水物とから得られるポリイミド樹脂が合成され、報告されている(例えば、非特許文献3)。しかし、この樹脂の線膨張係数に関する報告例は無く、低線膨張係数が発現するかどうかについての知見は得られていない。また、2、2’−位がフェノキシ基ではない2、2’−置換ビフェニル構造を有する酸無水物と2、2’−置換ビフェニル構造を有するジアミンとから得られるポリイミド樹脂も合成せれており、有機溶剤に可溶でありながら、比較的低い線熱膨張係数が発現するということが報告されている(例えば、非特許文献4及び5参照)。しかし、これらの樹脂は側鎖にアルキル基やハロゲン原子を含むため、耐熱性、環境負荷、電子部品を構成する他材料への影響といった点で必ずしも好ましいといえるものではない
本発明は、電気電子部品、配線基板などを構成する材料として、特に耐熱性、加工性ならびに寸法安定性が必要とされる部位に好適に利用されるポリイミド樹脂及びそのワニス(溶液)及びそのフィルムを提供することを目的とする。 The present invention is a polyimide resin, its varnish (solution) and its film, which are preferably used as a material constituting electrical and electronic parts, wiring boards, etc., particularly for parts requiring heat resistance, workability and dimensional stability. The purpose is to provide.
本発明者らは、耐熱性、加工性ならびに寸法安定性に優れたポリイミド樹脂を実現することを目的として鋭意検討した結果、構造を特定化することによりその目的を達成できることを見出して本発明を完成した。
すなわち、本発明は、下記の一般式(1A)及び一般式(1B)の少なくともいずれかで表される繰り返し単位を含むポリイミド樹脂及びそのワニス(溶液)及びそのフィルムである。(式中、R1はフェニル、3−ビフェニル、4−ビフェニル、1−ナフチル、2−ナフチルのいずれかの基を示す。Azはベンズアゾール構造を有する2価の有機基を示す。)
That is, this invention is a polyimide resin containing the repeating unit represented by at least any one of the following general formula (1A) and general formula (1B), its varnish (solution), and its film. (In the formula, R 1 represents any group of phenyl, 3-biphenyl, 4-biphenyl, 1-naphthyl, and 2-naphthyl. Az represents a divalent organic group having a benzazole structure.)
本発明のポリイミド樹脂は、ガラス転移点ならびに熱分解点が高いという特徴を有する。また、該ポリイミド樹脂は、イミド化された状態で有機溶剤に溶解できるので、前駆体であるポリアミド酸溶液に比べて該溶液の保存安定性が大幅に改善できるという利点を有する。さらに、本発明のポリイミド樹脂の樹脂溶液は、ポリイミド樹脂がイミド化されているので、例えば、該溶液を基板等の基材上に塗布し溶剤を揮発させることのみでガラス転移点ならびに熱分解点が高く、かつ線膨張係数が低いフィルムを形成することができるという利点を有する。そのために、前駆体であるポリアミド酸溶液を用いてフィルムを形成する場合に比べて低温で加工できる上に、イミド化時に発生する水によりボイドやクラックが発生し、配線基板等に不良をもたらすという課題が回避できるという利点を有する。また、本発明のポリイミド組成からなるフィルムは、線膨張係数が低いので、例えば、配線基板においては金属配線層と樹脂基板との間の熱膨張差による、昇温、降温過程における熱応力により引き起こされる反りやクラックなどの不具合の発生が抑制されるという利点を有するので、電子機器の高機能化や小型化に伴って配線基板の薄型化や多層化の市場ニーズに応えることができる。 The polyimide resin of this invention has the characteristics that a glass transition point and a thermal decomposition point are high. In addition, since the polyimide resin can be dissolved in an organic solvent in an imidized state, it has an advantage that the storage stability of the solution can be greatly improved as compared with the polyamic acid solution as a precursor. Further, since the polyimide resin resin solution of the present invention is imidized, for example, the glass transition point and the thermal decomposition point can be obtained simply by applying the solution on a substrate such as a substrate and volatilizing the solvent. And having a low linear expansion coefficient can be formed. Therefore, it can be processed at a lower temperature than when forming a film using a polyamic acid solution as a precursor, and voids and cracks are generated due to water generated at the time of imidization, resulting in defects in wiring boards and the like. It has the advantage that the problem can be avoided. In addition, since the film made of the polyimide composition of the present invention has a low coefficient of linear expansion, for example, in a wiring board, it is caused by thermal stress in the temperature rising and cooling processes due to the difference in thermal expansion between the metal wiring layer and the resin board. Therefore, it is possible to meet the market needs for thinner and multi-layered wiring boards as electronic devices become more functional and smaller in size.
本発明における、ポリイミド樹脂は、下記の一般式(1A)及び一般式(1B)の少なくともいずれかで表される繰り返し単位を含むものである。(式中、R1はフェニル、3−ビフェニル、4−ビフェニル、1−ナフチル、2−ナフチルのいずれかの基を示す。Azはベンズアゾール構造を有する2価の有機基を示す。)In the present invention, the polyimide resin contains a repeating unit represented by at least one of the following general formula (1A) and general formula (1B). (In the formula, R 1 represents any group of phenyl, 3-biphenyl, 4-biphenyl, 1-naphthyl, and 2-naphthyl. Az represents a divalent organic group having a benzazole structure.)
前記一般式(1A)および一般式(1B)のAz成分としては、ベンズアゾール構造を有する2価の有機基であれば特に限定されるものではないが、ポリマーの吸水率をより低下させるためにはベンズオキサゾール構造を有する2価の有機基であることが好ましく、さらに、耐熱性をより向上させるため、あるいは線膨張係数をより低下させるためには、下記の式(2)〜(15)で示される構造であることがより好ましい。 The Az component of the general formula (1A) and the general formula (1B) is not particularly limited as long as it is a divalent organic group having a benzazole structure, but in order to further reduce the water absorption rate of the polymer. Is preferably a divalent organic group having a benzoxazole structure. Further, in order to further improve the heat resistance or to further reduce the linear expansion coefficient, the following formulas (2) to (15) are used. More preferred is the structure shown.
本発明のポリイミド樹脂は、モノマーとして酸無水物類とジアミン類を使用することで合成できる。具体的には、下記一般式(16)(式中、R1はフェニル、3−ビフェニル、4−ビフェニル、1−ナフチル、2−ナフチルのいずれかの基を示す。)で示される酸無水物類と、ベンズアゾール構造を有するジアミン類を使用することで合成できる。The polyimide resin of the present invention can be synthesized by using acid anhydrides and diamines as monomers. Specifically, an acid anhydride represented by the following general formula (16) (wherein R 1 represents any group of phenyl, 3-biphenyl, 4-biphenyl, 1-naphthyl, and 2-naphthyl). And diamines having a benzazole structure can be synthesized.
ベンズアゾール構造を有するジアミンとしては、例えば、下記の一般式(17)〜(24)(式中、Xは酸素原子、硫黄原子又はNR7(式中、R7は水素原子又はフェニル基を示す)を示し、R2、R5、R6は、それぞれ独立して、単環又は複数の環から構成される芳香族環基又は複素環基を表し、R3、R4はそれぞれ独立して、単環又は複数の環から構成される芳香族環基、複素環基又は脂肪族環基を示す。)で示されるジアミンが挙げられ、さらに具体的には、下記式(25)〜(38)で示される。Examples of the diamine having a benzazole structure include, for example, the following general formulas (17) to (24) (wherein X represents an oxygen atom, a sulfur atom, or NR 7 (wherein R 7 represents a hydrogen atom or a phenyl group). R 2 , R 5 and R 6 each independently represents an aromatic ring group or a heterocyclic group composed of a single ring or a plurality of rings, and R 3 and R 4 each independently And a diamine represented by an aromatic ring group, a heterocyclic group or an aliphatic ring group composed of a single ring or a plurality of rings, and more specifically, the following formulas (25) to (38): ).
本発明では、全酸無水物類の20モル%未満であれば、以下に例示される酸無水物類を併用しても良い。例えば、ピロメリット酸無水物、3,3’,4,4’―ビフェニルテトラテトラカルボン酸二無水物、2,3’,3,4’―ビフェニルテトラテトラカルボン酸二無水物、2,2’,3,3’―ビフェニルテトラテトラカルボン酸二無水物、3,3’−4,4’−オキシジフェニルテトラカルボン酸無水物、ベンゾフェノン−3,3’,4,4’―テトラカルボン酸二無水物、ジフェニルスルホン−3,3’,4,4’―テトラカルボン酸二無水物、4,4’−(2,2−ヘキサフルオロイソプロピリデン)ジフタル酸二酸無水物、ジフェニルメロフェニックジアンハイドライド、2,2’−ジフェニル−3,3’,4,4’―ビフェニルテトラカルボン酸二無水物、2,2’−ジフェノキシ−3,3’,4,4’―ビフェニルテトラテトラカルボン酸二無水物等が挙げられる。 In the present invention, the acid anhydrides exemplified below may be used in combination as long as it is less than 20 mol% of the total acid anhydrides. For example, pyromellitic anhydride, 3,3 ′, 4,4′-biphenyltetratetracarboxylic dianhydride, 2,3 ′, 3,4′-biphenyltetratetracarboxylic dianhydride, 2,2 ′ , 3,3′-biphenyltetratetracarboxylic dianhydride, 3,3′-4,4′-oxydiphenyltetracarboxylic anhydride, benzophenone-3,3 ′, 4,4′-tetracarboxylic dianhydride , Diphenylsulfone-3,3 ′, 4,4′-tetracarboxylic dianhydride, 4,4 ′-(2,2-hexafluoroisopropylidene) diphthalic dianhydride, diphenylmerophane dianhydride, 2,2′-diphenyl-3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2′-diphenoxy-3,3 ′, 4,4′-biphenyltetratetra Carboxylic acid dianhydride, and the like.
本発明では、全ジアミン類の20モル%未満であれば、以下に例示されるジアミンを併用しても良い。例えば、4,4’−ビス(3−アミノフェノキシ)ビフェニル、ビス[4−(3−アミノフェノキシ)フェニル]ケトン、ビス[4−(3−アミノフェノキシ)フェニル]スルフィド、ビス[4−(3−アミノフェノキシ)フェニル]スルホン、2,2−ビス[4−(3−アミノフェノキシ)フェニル]プロパン、2,2−ビス[4−(3−アミノフェノキシ)フェニル]−1,1,1,3,3,3−ヘキサフルオロプロパン、m−フェニレンジアミン、o−フェニレンジアミン、p−フェニレンジアミン、m−アミノベンジルアミン、p−アミノベンジルアミン、3,3’−ジアミノジフェニルスルフィド、3,3’−ジアミノジフェニルスルホキシド、3,4’−ジアミノジフェニルスルホキシド、4,4’−ジアミノジフェニルスルホキシド、3,3’−ジアミノジフェニルスルホン、3,4’−ジアミノジフェニルスルホン、4,4’−ジアミノジフェニルスルホン、3,3’−ジアミノベンゾフェノン、3,4’−ジアミノベンゾフェノン4,4’−ジアミノベンゾフェノン、3,3’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルメタン、ビス[4−(4−アミノフェノキシ)フェニル]メタン、1,1−ビス[4−(4−アミノフェノキシ)フェニル]エタン、1,2−ビス[4−(4−アミノフェノキシ)フェニル]エタン、1,1−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、1,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、1,3−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、1,1−ビス[4−(4−アミノフェノキシ)フェニル]ブタン、1,3−ビス[4−(4−アミノフェノキシ)フェニル]ブタン、1,4−ビス[4−(4−アミノフェノキシ)フェニル]ブタン、2,2−ビス[4−(4−アミノフェノキシ)フェニル]ブタン、2,3−ビス[4−(4−アミノフェノキシ)フェニル]ブタン、2−[4−(4−アミノフェノキシ)フェニル]−2−[4−(4−アミノフェノキシ)−3−メチルフェニル]プロパン、2,2−ビス[4−(4−アミノフェノキシ)−3−メチルフェニル]プロパン、2−[4−(4−アミノフェノキシ)フェニル]−2−[4−(4−アミノフェノキシ)−3,5−ジメチルフェニル]プロパン、2,2−ビス[4−(4−アミノフェノキシ)−3,5−ジメチルフェニル]プロパン、2,2−ビス[4−(4−アミノフェノキシ)フェニル]−1,1,1,3,3,3−ヘキサフルオロプロパン、1,4−ビス(3−アミノフェノキシ)ベンゼン、1,3−ビス(3−アミノフェノキシ)ベンゼン1,4−ビス(4−アミノフェノキシ)ベンゼン,4,4’−ビス(4−アミノフェノキシ)ビフェニル、ビス[4−(4−アミノフェノキシ)フェニル]ケトン、ビス[4−(4−アミノフェノキシ)フェニル]スルフィド、ビス[4−(4−アミノフェノキシ)フェニル]スルホキシド、ビス[4−(4−アミノフェノキシ)フェニル]スルホン、1,3−ビス[4−(4−アミノフェノキシ)ベンゾイル]ベンゼン、1,3−ビス[4−(3−アミノフェノキシ)ベンゾイル]ベンゼン、1,4−ビス[4−(3−アミノフェノキシ)ベンゾイル]ベンゼン、4,4’−ビス(3−アミノフェノキシ)ベンゾイル]ベンゼン、1,1−ビス[4−(3−アミノフェノキシ)フェニル]プロパン、1,3−ビス[4−(3−アミノフェノキシ)フェニル]プロパン、3,4’−ジアミノジフェニルスルフィド、2,2−ビス[3−(3−アミノフェノキシ)フェニル]−1,1,1,3,3,3−ヘキサフルオロプロパン、ビス[4−(3−アミノフェノキシ)フェニル]メタン、1,1−ビス[4−(3−アミノフェノキシ)フェニル]エタン、1,2−ビス[4−(3−アミノフェノキシ)フェニル]エタン、2,2−ビス[4−(3−アミノフェノキシ)フェニル]スルホキシド、4,4’−ビス[3−(4−アミノフェノキシ)ベンゾイル]ジフェニルエーテル、4,4’−ビス[3−(3−アミノフェノキシ)ベンゾイル]ジフェニルエーテル、4,4’−ビス[4−(4−アミノ−α,α−ジメチルベンジル)フェノキシ]ベンゾフェノン、4,4’−ビス[4−(4−アミノ−α,α−ジメチルベンジル)フェノキシ]ジフェニルスルホン、ビス[4−{4−(4−アミノフェノキシ)フェノキシ}フェニル]スルホン、1,4−ビス[4−(4−アミノフェノキシ)フェノキシ−α,α−ジメチルベンジル]ベンゼン、1,3−ビス[4−(4−アミノフェノキシ)フェノキシ−α,α−ジメチルベンジル]ベンゼン、1,3−ビス[4−(4−アミノ−6−トリフルオロメチルフェノキシ)−α,α−ジメチルベンジル]ベンゼン、1,3−ビス[4−(4−アミノ−6−フルオロフェノキシ)−α,α−ジメチルベンジル]ベンゼン、1,3−ビス[4−(4−アミノ−6−メチルフェノキシ)−α,α−ジメチルベンジル]ベンゼン、1,3−ビス[4−(4−アミノ−6−シアノフェノキシ)−α,α−ジメチルベンジル]ベンゼン、3,3’−ジアミノ−4,4’−ジフェノキシベンゾフェノン、4,4’−ジアミノ−5,5’−ジフェノキシベンゾフェノン、3,4’−ジアミノ−4,5’−ジフェノキシベンゾフェノン、3,3’−ジアミノ−4−フェノキシベンゾフェノン、4,4’−ジアミノ−5−フェノキシベンゾフェノン、3,4’−ジアミノ−4−フェノキシベンゾフェノン、3,4’−ジアミノ−5’−フェノキシベンゾフェノン、3,3’−ジアミノ−4,4’−ジビフェノキシベンゾフェノン、4,4’−ジアミノ−5,5’−ジビフェノキシベンゾフェノン、3,4’−ジアミノ−4,5’−ジビフェノキシベンゾフェノン、3,3’−ジアミノ−4−ビフェノキシベンゾフェノン、4,4’−ジアミノ−5−ビフェノキシベンゾフェノン、3,4’−ジアミノ−4−ビフェノキシベンゾフェノン、3,4’−ジアミノ−5’−ビフェノキシベンゾフェノン、1,3−ビス(3−アミノ−4−フェノキシベンゾイル)ベンゼン、1,4−ビス(3−アミノ−4−フェノキシベンゾイル)ベンゼン、1,3−ビス(4−アミノ−5−フェノキシベンゾイル)ベンゼン、1,4−ビス(4−アミノ−5−フェノキシベンゾイル)ベンゼン、1,3−ビス(3−アミノ−4−ビフェノキシベンゾイル)ベンゼン、1,4−ビス(3−アミノ−4−ビフェノキシベンゾイル)ベンゼン、1,3−ビス(4−アミノ−5−ビフェノキシベンゾイル)ベンゼン、1,4−ビス(4−アミノ−5−ビフェノキシベンゾイル)ベンゼン、2,6−ビス[4−(4−アミノ−α,α−ジメチルベンジル)フェノキシ]ベンゾニトリル、及び上記芳香族ジアミンの芳香環上の水素原子の一部もしくは全てがハロゲン原子、炭素数1〜3のアルキル基又はアルコキシ基、シアノ基、又はアルキル基又はアルコキシ基の水素原子の一部もしくは全部がハロゲン原子で置換された炭素数1〜3のハロゲン化アルキル基又はアルコキシ基で置換された芳香族ジアミン等が挙げられる。 In the present invention, the diamine exemplified below may be used in combination as long as it is less than 20 mol% of the total diamines. For example, 4,4′-bis (3-aminophenoxy) biphenyl, bis [4- (3-aminophenoxy) phenyl] ketone, bis [4- (3-aminophenoxy) phenyl] sulfide, bis [4- (3 -Aminophenoxy) phenyl] sulfone, 2,2-bis [4- (3-aminophenoxy) phenyl] propane, 2,2-bis [4- (3-aminophenoxy) phenyl] -1,1,1,3 , 3,3-hexafluoropropane, m-phenylenediamine, o-phenylenediamine, p-phenylenediamine, m-aminobenzylamine, p-aminobenzylamine, 3,3'-diaminodiphenyl sulfide, 3,3'- Diaminodiphenyl sulfoxide, 3,4'-diaminodiphenyl sulfoxide, 4,4'-diaminodiphenyl sulfoxide Sid, 3,3′-diaminodiphenylsulfone, 3,4′-diaminodiphenylsulfone, 4,4′-diaminodiphenylsulfone, 3,3′-diaminobenzophenone, 3,4′-diaminobenzophenone 4,4′-diamino Benzophenone, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylmethane, bis [4- (4-aminophenoxy) phenyl] methane, 1,1-bis [4- (4 -Aminophenoxy) phenyl] ethane, 1,2-bis [4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [4- (4-aminophenoxy) phenyl] propane, 1,2-bis [ 4- (4-Aminophenoxy) phenyl] propane, 1,3-bis [4- (4-aminophenoxy) Phenyl] propane, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 1,1-bis [4- (4-aminophenoxy) phenyl] butane, 1,3-bis [4- (4 -Aminophenoxy) phenyl] butane, 1,4-bis [4- (4-aminophenoxy) phenyl] butane, 2,2-bis [4- (4-aminophenoxy) phenyl] butane, 2,3-bis [ 4- (4-aminophenoxy) phenyl] butane, 2- [4- (4-aminophenoxy) phenyl] -2- [4- (4-aminophenoxy) -3-methylphenyl] propane, 2,2-bis [4- (4-Aminophenoxy) -3-methylphenyl] propane, 2- [4- (4-aminophenoxy) phenyl] -2- [4- (4-aminophenoxy) -3,5-dimethyl Phenyl] propane, 2,2-bis [4- (4-aminophenoxy) -3,5-dimethylphenyl] propane, 2,2-bis [4- (4-aminophenoxy) phenyl] -1,1,1 , 3,3,3-hexafluoropropane, 1,4-bis (3-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene 1,4-bis (4-aminophenoxy) benzene, 4 , 4′-bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl] ketone, bis [4- (4-aminophenoxy) phenyl] sulfide, bis [4- (4-aminophenoxy) ) Phenyl] sulfoxide, bis [4- (4-aminophenoxy) phenyl] sulfone, 1,3-bis [4- (4-aminophenoxy) benzoyl] ben 1,3-bis [4- (3-aminophenoxy) benzoyl] benzene, 1,4-bis [4- (3-aminophenoxy) benzoyl] benzene, 4,4′-bis (3-aminophenoxy) Benzoyl] benzene, 1,1-bis [4- (3-aminophenoxy) phenyl] propane, 1,3-bis [4- (3-aminophenoxy) phenyl] propane, 3,4'-diaminodiphenyl sulfide, 2 , 2-bis [3- (3-aminophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, bis [4- (3-aminophenoxy) phenyl] methane, 1,1- Bis [4- (3-aminophenoxy) phenyl] ethane, 1,2-bis [4- (3-aminophenoxy) phenyl] ethane, 2,2-bis [4- (3-aminophene) Xyl) phenyl] sulfoxide, 4,4′-bis [3- (4-aminophenoxy) benzoyl] diphenyl ether, 4,4′-bis [3- (3-aminophenoxy) benzoyl] diphenyl ether, 4,4′-bis [4- (4-Amino-α, α-dimethylbenzyl) phenoxy] benzophenone, 4,4′-bis [4- (4-amino-α, α-dimethylbenzyl) phenoxy] diphenylsulfone, bis [4- { 4- (4-aminophenoxy) phenoxy} phenyl] sulfone, 1,4-bis [4- (4-aminophenoxy) phenoxy-α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4- Aminophenoxy) phenoxy-α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4-amino-6-trifluoromethyl) Noxy) -α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4-amino-6-fluorophenoxy) -α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4 -Amino-6-methylphenoxy) -α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4-amino-6-cyanophenoxy) -α, α-dimethylbenzyl] benzene, 3,3 ′ -Diamino-4,4'-diphenoxybenzophenone, 4,4'-diamino-5,5'-diphenoxybenzophenone, 3,4'-diamino-4,5'-diphenoxybenzophenone, 3,3'-diamino -4-phenoxybenzophenone, 4,4′-diamino-5-phenoxybenzophenone, 3,4′-diamino-4-phenoxybenzophenone, 3,4′-diamino-5 -Phenoxybenzophenone, 3,3'-diamino-4,4'-dibiphenoxybenzophenone, 4,4'-diamino-5,5'-dibiphenoxybenzophenone, 3,4'-diamino-4,5'-dibiphenoxy Benzophenone, 3,3′-diamino-4-biphenoxybenzophenone, 4,4′-diamino-5-biphenoxybenzophenone, 3,4′-diamino-4-biphenoxybenzophenone, 3,4′-diamino-5 ′ -Biphenoxybenzophenone, 1,3-bis (3-amino-4-phenoxybenzoyl) benzene, 1,4-bis (3-amino-4-phenoxybenzoyl) benzene, 1,3-bis (4-amino-5) -Phenoxybenzoyl) benzene, 1,4-bis (4-amino-5-phenoxybenzoyl) benzene, 1,3-bis (3-amino-4-biphenoxybenzoyl) benzene, 1,4-bis (3-amino-4-biphenoxybenzoyl) benzene, 1,3-bis (4-amino-5-biphenoxy) Benzoyl) benzene, 1,4-bis (4-amino-5-biphenoxybenzoyl) benzene, 2,6-bis [4- (4-amino-α, α-dimethylbenzyl) phenoxy] benzonitrile, and the above fragrance Part or all of the hydrogen atoms on the aromatic ring of the aromatic diamine are halogen atoms, part or all of the hydrogen atoms of an alkyl group or alkoxy group having 1 to 3 carbon atoms, cyano group, or alkyl group or alkoxy group And an aromatic diamine substituted with an alkyl group having 1 to 3 carbon atoms substituted with or an alkoxy group.
本発明のポリイミド樹脂を合成する際のモノマー混合比(モル比)は、酸無水物/ジアミンの表記方法で、好ましくは0.800〜1.200/1.200〜0.800、より好ましくは0.900〜1.100/1.100〜0.900、更に好ましくは0.950〜1.150/1.150〜0.950である。 The monomer mixing ratio (molar ratio) in synthesizing the polyimide resin of the present invention is an acid anhydride / diamine notation method, preferably 0.800 to 1.200 / 1.200 to 0.800, more preferably 0.900 to 1.100 / 1.100 to 0.900, more preferably 0.950 to 1.150 / 1.150 to 0.950.
また、本発明の分子末端封鎖のためにジカルボン酸無水物、トリカルボン酸無水物、アニリン誘導体などの末端封止剤を用いることが出来る。本発明で好ましく用いられるのは、無水フタル酸、無水マレイン酸、エチニルアニリンであり、無水マレイン酸の使用がより好ましい。末端封止剤の使用量は、モノマー成分1モル当たり0.001〜1.0モル比である。 Moreover, terminal blockers, such as a dicarboxylic acid anhydride, a tricarboxylic acid anhydride, and an aniline derivative, can be used for the molecular terminal blockage of the present invention. Preferred for use in the present invention are phthalic anhydride, maleic anhydride, and ethynylaniline, and the use of maleic anhydride is more preferred. The usage-amount of terminal blocker is 0.001-1.0 molar ratio per mol of monomer components.
本発明のポリイミド樹脂を合成する際に使用する有機溶剤としては、原料モノマー及び中間生成物であるポリアミド酸、生成物であるポリイミド樹脂のいずれをも溶解するものであれば特に限定されないが、例えば、o−クレゾール、m−クレゾール、p−クレゾール、N−メチル−2−ピロリドン(NMPと略記する)、N−アセチル−2−ピロリドン、N,N−ジメチルホルムアミド(DMFと略記する)、N,N−ジメチルアセトアミド(DMAcと略記する)、ジメチルスルホキシド、γ−ブチロラクトン、スルホラン、ハロゲン化フェノール類等があげられ、これらの溶媒は,単独あるいは混合して使用することができる。極性有機溶媒の使用量は、仕込みモノマーを溶解するのに十分な量であればよく、通常は1〜50質量%であり好ましくは5〜30質量%の固形分を含むものであればよい。 The organic solvent used when synthesizing the polyimide resin of the present invention is not particularly limited as long as it dissolves both the raw material monomer and the polyamic acid which is an intermediate product, and the polyimide resin which is a product. O-cresol, m-cresol, p-cresol, N-methyl-2-pyrrolidone (abbreviated as NMP), N-acetyl-2-pyrrolidone, N, N-dimethylformamide (abbreviated as DMF), N, Examples thereof include N-dimethylacetamide (abbreviated as DMAc), dimethyl sulfoxide, γ-butyrolactone, sulfolane, halogenated phenols, and the like. These solvents can be used alone or in combination. The amount of the polar organic solvent used may be an amount sufficient to dissolve the charged monomer, and is usually 1 to 50% by mass, preferably 5 to 30% by mass.
重合反応は、有機溶媒中で撹拌及び/又は混合しながら、0〜80℃の温度範囲で、10分〜30時間連続して進めた後、さらに100〜300℃の温度範囲で10分から30時間連続して進められるが、必要により重合反応を分割したり、温度を上下させてもかまわない。この場合に、両反応体の添加順序には特に制限はないが、芳香族ジアミン類の溶液中に芳香族テトラカルボン酸無水物類を添加するのが好ましい。
本発明では閉環触媒を用いても良い。本発明で使用される閉環触媒の具体例としては、安息香酸、o−安息香酸、m−安息香酸、p−安息香酸などの芳香族カルボン酸、トリメチルアミン、トリエチルアミンなどの脂肪族第3級アミン、イソキノリン、ピリジン、ベータピコリンなどの複素環式第3級アミンなどが挙げられるが、複素環式第3級アミンから選ばれる少なくとも一種のアミンを使用することが好ましい。閉環触媒の含有量は、閉環触媒の含有量(モル)/前駆体であるポリアミド酸中の含有量(モル)が0.01〜10.00となる範囲が好ましい。The polymerization reaction is continued for 10 minutes to 30 hours in a temperature range of 0 to 80 ° C. while stirring and / or mixing in an organic solvent, and further in a temperature range of 100 to 300 ° C. for 10 minutes to 30 hours. Although the process proceeds continuously, the polymerization reaction may be divided or the temperature may be increased or decreased as necessary. In this case, the order of addition of both reactants is not particularly limited, but it is preferable to add aromatic tetracarboxylic anhydrides to the solution of aromatic diamines.
In the present invention, a ring-closing catalyst may be used. Specific examples of the ring-closing catalyst used in the present invention include aromatic carboxylic acids such as benzoic acid, o-benzoic acid, m-benzoic acid, and p-benzoic acid, aliphatic tertiary amines such as trimethylamine and triethylamine, Examples include heterocyclic tertiary amines such as isoquinoline, pyridine, and betapicoline. At least one amine selected from heterocyclic tertiary amines is preferably used. The content of the ring-closing catalyst is preferably in a range in which the content (mol) of the ring-closing catalyst (mol) / the content (mol) of the precursor polyamic acid is 0.01 to 10.00.
本発明では脱水剤を用いても良い。例えば、無水酢酸、無水プロピオン酸、無水酪酸などの脂肪族カルボン酸無水物、及び無水安息香酸などの芳香族カルボン酸無水物などが挙げられるが、効率よく脱水できるものであれば、特にこれらに限定されない。脱水剤の含有量は、脱水剤の含有量(モル)/ポリアミド酸の含有量(モル)が0.01〜10.00となる範囲が好ましい。
本発明では、水を共沸させるために共溶媒を用いても良い。例えば、トルエン、キシレン等が挙げられるが、効率よく水を共沸させることができるものであればこれらに限定されない。In the present invention, a dehydrating agent may be used. Examples thereof include aliphatic carboxylic acid anhydrides such as acetic anhydride, propionic anhydride, and butyric anhydride, and aromatic carboxylic acid anhydrides such as benzoic anhydride. It is not limited. The content of the dehydrating agent is preferably in a range where the content of dehydrating agent (mole) / polyamic acid content (mole) is 0.01 to 10.00.
In the present invention, a co-solvent may be used to azeotrope water. For example, toluene, xylene and the like can be mentioned, but not limited to these as long as water can be efficiently azeotroped.
本発明では更に、ポリイミド樹脂の性能向上を目的として、添加物を加えても良い。これら、添加物は、その目的によって様々であり、特に限定されるものではない。
また、添加方法、添加時期においても特に限定されるものではない。添加物の例としては、酸化珪素、酸化チタン、酸化アルミニウム、等の金属酸化物、リン酸カルシウム、リン酸水素カルシウム、ピロリン酸カルシウム等のリン酸塩など、有機、無機の公知のフィラーが挙げられる。In the present invention, an additive may be added for the purpose of improving the performance of the polyimide resin. These additives vary depending on the purpose and are not particularly limited.
Further, the addition method and the addition time are not particularly limited. Examples of the additive include known organic and inorganic fillers such as metal oxides such as silicon oxide, titanium oxide, and aluminum oxide, and phosphates such as calcium phosphate, calcium hydrogen phosphate, and calcium pyrophosphate.
本発明では、反応によって得られたポリイミド樹脂を適当な貧溶媒を用いて反応溶液から再沈殿させても良い。貧溶媒としては、アセトン、メタノール、エタノール、水などが挙げられるが、効率よく再沈殿させることができるものであれば、特にこれらに限定されない。また、再沈殿した後の残存反応溶媒を除去する溶媒についても特に限定されないが、再沈殿させた際に用いた溶媒を使用することが好ましい。 In the present invention, the polyimide resin obtained by the reaction may be reprecipitated from the reaction solution using a suitable poor solvent. Examples of the poor solvent include acetone, methanol, ethanol, water, and the like. However, the poor solvent is not particularly limited as long as it can be efficiently re-precipitated. Moreover, although it does not specifically limit about the solvent which removes the residual reaction solvent after reprecipitation, It is preferable to use the solvent used at the time of reprecipitation.
本発明では、反応溶液をそのままポリイミド樹脂溶液として利用しても良いし、反応溶液から上記手法で再沈殿させたポリイミド樹脂を再び溶媒に溶解させてポリイミド樹脂溶液を得てもよい。後者の場合、ポリイミド樹脂を効率よく溶解させるものであれば、特に限定されるものではないが、例として、o−クレゾール、m−クレゾール、p−クレゾール、N−メチル−2−ピロリドン,N−アセチル−2−ピロリドン、N,N−ジメチルホルムアミド、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシド、γ−ブチロラクトン、スルホラン、ハロゲン化フェノール類等の有機溶剤が挙げられる。 In the present invention, the reaction solution may be used as it is as a polyimide resin solution, or the polyimide resin reprecipitated from the reaction solution by the above method may be dissolved again in a solvent to obtain a polyimide resin solution. In the latter case, the polyimide resin is not particularly limited as long as it efficiently dissolves the polyimide resin. For example, o-cresol, m-cresol, p-cresol, N-methyl-2-pyrrolidone, N- Examples thereof include organic solvents such as acetyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, sulfolane, and halogenated phenols.
本発明では、ポリイミド樹脂と有機溶媒を混合させる手段として、特に限定はしないが、例えば、通常の攪拌翼、高粘度用の攪拌翼を用いて混合攪拌する方法、多軸の押し出し機、あるいはスタティックミキサーなどを用いる方法、更には、ロールミルなどの高粘度用混合分散機を用いる方法を用いて混合攪拌することが挙げられる。 In the present invention, the means for mixing the polyimide resin and the organic solvent is not particularly limited. For example, a normal stirring blade, a method of mixing and stirring using a stirring blade for high viscosity, a multi-screw extruder, or a static Examples of the method include mixing and stirring using a method using a mixer or the like, and further using a method using a mixing and dispersing machine for high viscosity such as a roll mill.
本発明で得られるポリイミド樹脂溶液中のポリイミド樹脂の組成としては、好ましくは1〜50質量%、より好ましくは5〜30質量%を含有することが挙げられる。この場合。その粘度はブルックフィールド粘度計による測定で0.1〜2000Pa・s、好ましくは1〜1000Pa・sのものが、安定した送液が可能であることから好ましい。 As a composition of the polyimide resin in the polyimide resin solution obtained by this invention, Preferably it contains 1-50 mass%, More preferably, containing 5-30 mass% is mentioned. in this case. The viscosity is preferably 0.1 to 2000 Pa · s, preferably 1 to 1000 Pa · s, as measured with a Brookfield viscometer, because stable liquid feeding is possible.
本発明において、ポリイミド樹脂溶液を基材上に塗布する方法は、特に限定しないが、例えば、スピンコートなど回転塗布する方法、ドクターブレードやアプリケーター、コンマコーターなどスキージを利用する方法、スクリーン印刷法などが挙げられる。
本発明において、基材上に塗布されたポリイミド樹脂溶液から溶媒を除去するための乾燥温度条件は、80℃以上、好ましくは150℃以上、なお好ましくは180℃以上である。乾燥温度が低すぎると、溶媒の揮発に時間がかかるため、あるいは十分な乾燥が見込めないため概ね80℃以上で行ったほうが良い。また乾燥温度は高い方が良いが、高すぎると、熱劣化によりフィルム物性が低下するため、概ね500℃以下で行ったほうが良い。In the present invention, the method of applying the polyimide resin solution on the substrate is not particularly limited. For example, a method of spin coating such as spin coating, a method using a squeegee such as a doctor blade, applicator, and comma coater, a screen printing method, and the like. Is mentioned.
In this invention, the drying temperature conditions for removing a solvent from the polyimide resin solution apply | coated on the base material are 80 degreeC or more, Preferably it is 150 degreeC or more, More preferably, it is 180 degreeC or more. If the drying temperature is too low, it takes time for the solvent to volatilize, or sufficient drying cannot be expected. The drying temperature is preferably high, but if it is too high, the film physical properties deteriorate due to thermal deterioration.
上記基材は、電気電子部品、配線基板等を構成する基材が好適であるが限定されないが、例えば、シリコンウェハやガラス基板、銅箔などの無機基板、ポリエチレンテレフタレートフィルムやポリイミドフィルムなどの有機基板などが挙げられる。 The base material is preferably a base material that constitutes an electric / electronic component, a wiring board or the like, but is not limited to, for example, an inorganic substrate such as a silicon wafer, a glass substrate or a copper foil, or an organic material such as a polyethylene terephthalate film or a polyimide film. Examples include substrates.
かかる条件により、イミド化された状態で有機溶剤に溶解することも可能でありながら、ガラス転移温度が270℃以上、好ましくは300℃以上、さらに好ましくは320℃以上と高く、熱分解温度が500℃以上、好ましくは530℃以上、さらに好ましくは580℃以上と高く、50−200℃における線膨張係数が30ppm/℃以下、好ましくは20ppm/℃以下と低く、引張り弾性率が2.2GPa以上、好ましくは2.8GPa以上,さらに好ましくは3.3GPa以上と高い、ポリイミド樹脂ならびにポリイミド樹脂フィルムを得ることができる。 Under such conditions, the glass transition temperature is 270 ° C. or higher, preferably 300 ° C. or higher, more preferably 320 ° C. or higher, and the thermal decomposition temperature is 500, although it can be dissolved in an organic solvent in an imidized state. Or higher, preferably 530 ° C. or higher, more preferably 580 ° C. or higher, linear expansion coefficient at 50-200 ° C. is 30 ppm / ° C. or lower, preferably 20 ppm / ° C. or lower, and tensile modulus is 2.2 GPa or higher. A polyimide resin and a polyimide resin film, which are preferably as high as 2.8 GPa or more, and more preferably as high as 3.3 GPa or more, can be obtained.
以下、本発明を実施例を挙げて説明するが、本発明はこれらに限定されるものではない。なお、以下の実施例における物性の評価方法は以下の通りである。
1.ポリイミド樹脂の還元粘度(ηsp/C)
ポリマー濃度が0.2g/dlとなるようにN−メチル−2−ピロリドンに溶解した溶液をウベローゼ型の粘度管により25℃で測定した。EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated, this invention is not limited to these. In addition, the evaluation method of the physical property in the following examples is as follows.
1. Reduced viscosity of polyimide resin (ηsp / C)
A solution dissolved in N-methyl-2-pyrrolidone so that the polymer concentration was 0.2 g / dl was measured at 25 ° C. using an Ubellose type viscosity tube.
2.ポリイミド樹脂の溶解性
各ポリイミド樹脂1gを30ccサンプル管瓶に採取し、m−クレゾール、N−メチル−2−ピロリドン(NMPと略記する)、N,N−ジメチルアセトアミド(DMAcと略記する)、N,N−ジメチルホルムアミド(DMFと略記する)で20倍希釈し、ホットプレート付き電磁スターラーで80℃設定で撹拌した。目視でそれぞれの液の
不溶物を確認し、以下の判定をした。
不溶物なし:○
不溶物あり:×2. Solubility of polyimide resin 1 g of each polyimide resin was collected in a 30 cc sample tube, and m-cresol, N-methyl-2-pyrrolidone (abbreviated as NMP), N, N-dimethylacetamide (abbreviated as DMAc), N , N-dimethylformamide (abbreviated as DMF) 20 times and stirred with an electromagnetic stirrer with a hot plate at 80 ° C. setting. The insoluble matter of each liquid was visually confirmed, and the following determination was made.
No insoluble matter: ○
Insoluble matter: ×
3.ポリイミド樹脂フィルムの厚さ
得られたポリイミド樹脂フィルムを基板から剥がし、マイクロメーター(ファインリューフ社製、ミリトロン1254D)を用いて測定した。3. Thickness of polyimide resin film The obtained polyimide resin film was peeled off from the substrate, and measured using a micrometer (Millitron 1254D manufactured by Fine Reef).
4.ポリイミド樹脂フィルムの引張弾性率、引張破断強度及び引張破断伸度
得られたポリイミド樹脂フィルムを基板から剥がし、長さ100mm、幅10mmの短冊状に切り出して試験片とし、引張試験機(島津製作所製オートグラフ(商品名)機種名AG−5000A)を用い、引張速度50mm/分、チャック間距離40mmで測定し、引張弾性率、引張破断強度及び引張破断伸度を求めた。4). Tensile modulus, tensile breaking strength and tensile breaking elongation of the polyimide resin film The obtained polyimide resin film is peeled off from the substrate, cut into a strip shape having a length of 100 mm and a width of 10 mm, and used as a test piece. Using an autograph (trade name) model name AG-5000A), measurement was performed at a tensile speed of 50 mm / min and a distance between chucks of 40 mm, and tensile modulus, tensile breaking strength, and tensile breaking elongation were determined.
5.ポリイミド樹脂フィルムの線膨張係数(CTE)
得られたポリイミド樹脂フィルムを基板から剥がし、下記条件で伸縮率を測定し、50〜200℃までを15℃間隔で分割し、各分割範囲の伸縮率/温度の平均値より求めた。
装置名 ; MACサイエンス社製TMA4000S
試料長さ ; 20mm
試料幅 ; 2mm
昇温開始温度 ; 25℃
昇温終了温度 ; 400℃
昇温速度 ; 5℃/min
雰囲気 ; アルゴン5). Linear expansion coefficient (CTE) of polyimide resin film
The obtained polyimide resin film was peeled off from the substrate, the stretch rate was measured under the following conditions, 50 to 200 ° C. was divided at 15 ° C. intervals, and obtained from the average value of the stretch rate / temperature of each divided range.
Device name: TMA4000S manufactured by MAC Science
Sample length; 20mm
Sample width: 2 mm
Temperature rise start temperature: 25 ° C
Temperature rising end temperature: 400 ° C
Temperature increase rate: 5 ° C / min
Atmosphere: Argon
6.ポリイミド樹脂フィルムの融点、ガラス転位温度
得られたポリイミド樹脂フィルムを基板から剥がし、下記条件でDSC測定し、融点(融解ピーク温度Tpm)とガラス転移点(Tmg)をJIS K 7121に準拠して下記測定条件で求めた。
装置名 ; MACサイエンス社製DSC3100SA
パン ; アルミパン(非気密型)
試料質量 ; 4mg
昇温開始温度 ; 30℃
昇温収量温度 ; 400℃
昇温速度 ; 20℃/min
雰囲気 ; アルゴン6). Melting point of polyimide resin film, glass transition temperature The obtained polyimide resin film was peeled off from the substrate and subjected to DSC measurement under the following conditions. The melting point (melting peak temperature Tpm) and glass transition point (Tmg) were as follows according to JIS K 7121. Obtained under measurement conditions.
Device name: DSC3100SA manufactured by MAC Science
Pan : Aluminum pan (non-airtight)
Sample mass: 4mg
Temperature rising start temperature: 30 ° C
Temperature rising yield temperature: 400 ° C
Temperature increase rate: 20 ° C / min
Atmosphere: Argon
7.ポリイミド樹脂フィルムの熱分解温度
得られたポリイミド樹脂フィルムを基板から剥がし、充分に乾燥した試料を下記条件でTGA測定(熱天秤測定)して、5%質量減をもって規定した。
装置名 ; MACサイエンス社製TG−DTA2000S
パン ; アルミパン(非気密型)
試料質量 ; 10mg
昇温開始温度 ; 30℃
昇温狩猟温度 ; 800℃
昇温速度 ; 20℃/min
雰囲気 ; アルゴン7). Thermal decomposition temperature of polyimide resin film The obtained polyimide resin film was peeled off from the substrate, and a sufficiently dried sample was measured by TGA (thermobalance measurement) under the following conditions and defined with a mass loss of 5%.
Device name: TG-DTA2000S manufactured by MAC Science
Pan : Aluminum pan (non-airtight)
Sample mass: 10 mg
Temperature rising start temperature: 30 ° C
Increased hunting temperature: 800 ℃
Temperature increase rate: 20 ° C / min
Atmosphere: Argon
8.ポリイミド樹脂フィルムの吸水率
得られたポリイミド樹脂フィルムを基板から剥がし、一辺10cmの正方形に切り取り、150℃で1時間減圧乾燥したときの質量を測定(W1)した。次いで、このフィルムを23℃の純水中に24時間浸漬した後、表面に付着した水を布で軽くふき取って、フィルムの質量を測定(W2)した。フィルムの吸水率(Q)を下記式にて算出した。
Q(%)=[{W2(g)―W1(g)}/W2(g)]×1008). Water Absorption Rate of Polyimide Resin Film The obtained polyimide resin film was peeled off from the substrate, cut into a square with a side of 10 cm, and the mass when dried under reduced pressure at 150 ° C. for 1 hour was measured (W 1 ). Next, after immersing this film in pure water at 23 ° C. for 24 hours, water adhered to the surface was gently wiped with a cloth, and the mass of the film was measured (W 2 ). The water absorption rate (Q) of the film was calculated by the following formula.
Q (%) = [{W 2 (g) −W 1 (g)} / W 2 (g)] × 100
9.銅張り積層フィルムの平面性
一辺10cmの正方形に切り取った銅張り積層フィルムを平らな定盤に銅箔が上になるように置き、定盤から4つの角までの高さを測定しその4点の値を合算して、これを4で除した値を「反り」の値とした。なお、銅箔面が凸に反っている場合には、向きを逆にして同様に測定し、値を負の数として表示した。捻じれ、うねりについては目視にて判定した。9. Flatness of copper-clad laminate film Place the copper-clad laminate film cut into a 10cm square on a flat surface plate with the copper foil facing up, and measure the height from the surface plate to four corners. The value obtained by adding up the values and dividing this by 4 was taken as the value of “warp”. In addition, when the copper foil surface was curving convexly, it measured similarly with the direction reversed, and displayed the value as a negative number. Twist and undulation were judged visually.
(実施例1)
窒素導入管,温度計,攪拌棒を備えた反応容器内を窒素置換した後、5−アミノ−2−(p−アミノフェニル)ベンゾオキサゾール10.00g、2,2’−ジフェノキシ−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物21.23g、イソキノリン0.50gを仕込んだ。次いで、m−クレゾール270gを加えて完全に溶解させた後,25℃の反応温度で20時間攪拌すると、淡黄色のポリアミド酸溶液が得られた。その後、装置にディーンタークトラップを設置し、N2気流下、200℃の温度で6時間撹拌した。空冷後、はじめにアセトン2000mlで再沈殿を行った。得られた固形物をミキサーにて粉砕し、アセトン500ml中25℃で撹拌洗浄を2回、アセトン500ml中還流下で攪拌洗浄を6時間行った。乾燥を減圧下70℃で12時間行い、収量27.8gで淡黄色のポリイミド樹脂を得た。得られたポリイミド樹脂の還元粘度、溶解性を表1に示す。
得られたポリイミド樹脂10gとN−メチル−2−ピロリドン100gを混合し、80℃の温度で1時間攪拌することにより、ポリイミド樹脂溶液を得た。Example 1
After purging the inside of the reaction vessel equipped with a nitrogen introduction tube, a thermometer, and a stirring rod with nitrogen, 10.00 g of 5-amino-2- (p-aminophenyl) benzoxazole, 2,2′-diphenoxy-3, 3 ′ , 4,4′-biphenyltetracarboxylic dianhydride 21.23 g and isoquinoline 0.50 g were charged. Next, 270 g of m-cresol was added and completely dissolved, and then stirred at a reaction temperature of 25 ° C. for 20 hours to obtain a pale yellow polyamic acid solution. Thereafter, a Dean Turk trap was installed in the apparatus, and the mixture was stirred at a temperature of 200 ° C. for 6 hours under a N 2 stream. After air cooling, reprecipitation was first performed with 2000 ml of acetone. The obtained solid was pulverized with a mixer, washed twice with stirring in 500 ml of acetone at 25 ° C., and then washed with stirring under reflux in 500 ml of acetone for 6 hours. Drying was performed at 70 ° C. under reduced pressure for 12 hours to obtain a pale yellow polyimide resin in a yield of 27.8 g. Table 1 shows the reduced viscosity and solubility of the obtained polyimide resin.
10 g of the obtained polyimide resin and 100 g of N-methyl-2-pyrrolidone were mixed and stirred at a temperature of 80 ° C. for 1 hour to obtain a polyimide resin solution.
得られたポリイミド樹脂溶液をシリコンウェハ上に塗布した後、250℃で2時間乾燥することにより、反りのないポリイミド樹脂付きシリコンウェハを得た。続いて、このウェハからポリイミド樹脂部分を剥離することにより、厚さ10μのポリイミド樹脂フィルムを得た。このフィルムの諸特性を表1に示す。
また、得られたポリイミド樹脂溶液をコンマコーターを用いて幅600mm、厚さが12μmの銅箔の片面に塗膜乾燥厚さが24μmとなるようにコーティングして110℃で60分間乾燥した後、塗膜面の両端に幅が9mm、厚さが150μm、片面に粘着層を有するガラス繊維不織布テープを貼りながら銅箔面が外側になるように、直径75mmのアルミニウム管に巻取った。巻取ったロールを真空乾燥機にいれ、真空にしながら、250℃に昇温して10時間熱処理を行った後、3時間かけて室温まで冷却し、反り、捻じれ、カールのない銅張り積層フィルムを得た。After apply | coating the obtained polyimide resin solution on a silicon wafer, the silicon wafer with a polyimide resin without a curvature was obtained by drying at 250 degreeC for 2 hours. Subsequently, a polyimide resin film having a thickness of 10 μm was obtained by peeling the polyimide resin portion from the wafer. Various properties of this film are shown in Table 1.
Moreover, after coating the obtained polyimide resin solution on one side of a copper foil having a width of 600 mm and a thickness of 12 μm using a comma coater so that the coating film dry thickness becomes 24 μm, and drying at 110 ° C. for 60 minutes, A glass fiber nonwoven fabric tape having a width of 9 mm and a thickness of 150 μm on both sides of the coating film surface and an adhesive layer on one side was applied, and the copper foil surface was wound around an aluminum tube having a diameter of 75 mm. Put the wound roll in a vacuum dryer, heat up to 250 ° C and heat-treat for 10 hours while applying vacuum, then cool to room temperature over 3 hours, and have copper-clad lamination without warping, twisting, or curling A film was obtained.
(実施例2)
酸無水物として2,2’−ビス(3−フェニルフェノキシ)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物28.00gを用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表1に示す。(Example 2)
The same operation as in Example 1 except that 28.00 g of 2,2′-bis (3-phenylphenoxy) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. Thus, the corresponding polyimide resin, polyimide resin film, and copper-clad laminate film were obtained. Each characteristic is shown in Table 1.
(実施例3)
酸無水物として2,2’−ビス(4−フェニルフェノキシ)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物28.00gを用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表1に示す。(Example 3)
The same operation as in Example 1 except that 28.00 g of 2,2′-bis (4-phenylphenoxy) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. Thus, the corresponding polyimide resin, polyimide resin film, and copper-clad laminate film were obtained. Each characteristic is shown in Table 1.
(実施例4)
酸無水物として2,2’−ビス(1−ナフトキシ)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物25.68gを用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表1に示す。Example 4
By the same operation as in Example 1 except that 25.68 g of 2,2′-bis (1-naphthoxy) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained. Each characteristic is shown in Table 1.
(実施例5)
酸無水物として2,2’−ビス(2−ナフトキシ)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物25.68gを用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表1に示す。(Example 5)
By the same operation as in Example 1, except that 25.68 g of 2,2′-bis (2-naphthoxy) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained. Each characteristic is shown in Table 1.
(実施例6)
ジアミンとして6−アミノ−2−(p−アミノフェニル)ベンゾオキサゾールを10.00g用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表2に示す。(Example 6)
The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained by the same operation as in Example 1 except that 10.00 g of 6-amino-2- (p-aminophenyl) benzoxazole was used as the diamine. . Each characteristic is shown in Table 2.
(実施例7)
ジアミンとして5−アミノ−2−(p−アミノフェニル)ベンズイミダゾールを10.00g用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表2に示す。(Example 7)
The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained by the same operation as in Example 1 except that 10.00 g of 5-amino-2- (p-aminophenyl) benzimidazole was used as the diamine. . Each characteristic is shown in Table 2.
(実施例8)
ジアミンとして5−アミノ−2−(p−アミノフェニル)ベンズチアゾールを10.00g用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表2に示す。(Example 8)
The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained by the same operation as in Example 1 except that 10.00 g of 5-amino-2- (p-aminophenyl) benzthiazole was used as the diamine. . Each characteristic is shown in Table 2.
(比較例1)
窒素導入管,温度計,攪拌棒を備えた反応容器内を窒素置換した後、p−フェニレンジアミン10.00g、2,2’−ジフェノキシ−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物44.35g、イソキノリン0.50gを仕込んだ。次いで、m−クレゾール450gを加えて完全に溶解させた後,25℃の反応温度で20時間攪拌すると、淡黄色のポリアミド酸溶液が得られた。その後、装置にディーンスタークトラップを設置し、N2気流下、200℃の温度で8時間撹拌した。以下の操作は実施例1と同様の操作により、対応するポリイミド樹脂とポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表2に示す。(Comparative Example 1)
After purging the inside of a reaction vessel equipped with a nitrogen introduction tube, a thermometer, and a stirring bar with nitrogen, 10.00 g of p-phenylenediamine, 2,2′-diphenoxy-3,3 ′, 4,4′-biphenyltetracarboxylic acid 44.35 g of dianhydride and 0.50 g of isoquinoline were charged. Subsequently, 450 g of m-cresol was added and completely dissolved, and then stirred at a reaction temperature of 25 ° C. for 20 hours to obtain a pale yellow polyamic acid solution. Thereafter, a Dean-Stark trap was installed in the apparatus, and the mixture was stirred for 8 hours at a temperature of 200 ° C. under a N 2 stream. The following operations were carried out in the same manner as in Example 1 to obtain the corresponding polyimide resin, polyimide resin film and copper-clad laminate film. Each characteristic is shown in Table 2.
(比較例2)
ジアミンとして2,2’−ビス(トリフルオロメチル)−4,4’−ジアミノビフェニルを14.22g用いたこと以外は実施例1と同様の操作により、対応するポリイミド樹脂とポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表2に示す。(Comparative Example 2)
The corresponding polyimide resin, polyimide resin film, and copper-coated were obtained in the same manner as in Example 1 except that 14.22 g of 2,2′-bis (trifluoromethyl) -4,4′-diaminobiphenyl was used as the diamine. A laminated film was obtained. Each characteristic is shown in Table 2.
(実施例9)
窒素導入管,温度計,攪拌棒を備えた反応容器内を窒素置換した後、5−アミノ−2−(p−アミノフェニル)ベンゾオキサゾール10.00g、2,2’−ジフェニル−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物19.82g、イソキノリン0.50gを仕込んだ。次いで、m−クレゾール270gを加えて完全に溶解させた後,25℃の反応温度で20時間攪拌すると、淡黄色のポリアミド酸溶液が得られた。その後、装置にディーンタークトラップを設置し、N2気流下、200℃の温度で6時間撹拌した。空冷後、はじめにアセトン2000mlで再沈殿を行った。得られた固形物をミキサーにて粉砕し、アセトン500ml中25℃で撹拌洗浄を2回、アセトン500ml中還流下で攪拌洗浄を6時間行った。乾燥を減圧下70℃で12時間行い、収量27.8gで淡黄色のポリイミド樹脂を得た。得られたポリイミド樹脂の還元粘度、溶解性を表3に示す。
得られたポリイミド樹脂10gとN−メチル−2−ピロリドン100gを混合し、80℃の温度で1時間攪拌することにより、ポリイミド樹脂溶液を得た。Example 9
After the inside of the reaction vessel equipped with a nitrogen introduction tube, a thermometer, and a stirring rod was replaced with nitrogen, 10.00 g of 5-amino-2- (p-aminophenyl) benzoxazole, 2,2′-diphenyl-3,3 ′ , 4,4′-biphenyltetracarboxylic dianhydride 19.82 g and isoquinoline 0.50 g were charged. Next, 270 g of m-cresol was added and completely dissolved, and then stirred at a reaction temperature of 25 ° C. for 20 hours to obtain a pale yellow polyamic acid solution. Thereafter, a Dean Turk trap was installed in the apparatus, and the mixture was stirred at a temperature of 200 ° C. for 6 hours under a N 2 stream. After air cooling, reprecipitation was first performed with 2000 ml of acetone. The obtained solid was pulverized with a mixer, washed twice with stirring in 500 ml of acetone at 25 ° C., and then washed with stirring under reflux in 500 ml of acetone for 6 hours. Drying was performed at 70 ° C. under reduced pressure for 12 hours to obtain a pale yellow polyimide resin in a yield of 27.8 g. Table 3 shows the reduced viscosity and solubility of the obtained polyimide resin.
10 g of the obtained polyimide resin and 100 g of N-methyl-2-pyrrolidone were mixed and stirred at a temperature of 80 ° C. for 1 hour to obtain a polyimide resin solution.
得られたポリイミド樹脂溶液をシリコンウェハ上に塗布した後、250℃で2時間乾燥することにより、反りのないポリイミド樹脂付きシリコンウェハを得た。続いて、このウェハからポリイミド樹脂部分を剥離することにより、厚さ10μmのポリイミド樹脂フィルムを得た。このフィルムの諸特性を表3に示す。
また、得られたポリイミド樹脂溶液をコンマコーターを用いて幅600mm、厚さが12μmの銅箔の片面に塗膜乾燥厚さが24μmとなるようにコーティングして110℃で60分間乾燥した後、塗膜面の両端に幅が9mm、厚さが150μm、片面に粘着層を有するガラス繊維不織布テープを貼りながら銅箔面が外側になるように、直径75mmのアルミニウム管に巻取った。巻取ったロールを真空乾燥機にいれ、真空にしながら、250℃に昇温して10時間熱処理を行った後、3時間かけて室温まで冷却し、反り、捻じれ、カールのない銅張り積層フィルムを得た。After apply | coating the obtained polyimide resin solution on a silicon wafer, the silicon wafer with a polyimide resin without a curvature was obtained by drying at 250 degreeC for 2 hours. Subsequently, a polyimide resin film having a thickness of 10 μm was obtained by peeling the polyimide resin portion from the wafer. Various properties of this film are shown in Table 3.
Moreover, after coating the obtained polyimide resin solution on one side of a copper foil having a width of 600 mm and a thickness of 12 μm using a comma coater so that the coating film dry thickness becomes 24 μm, and drying at 110 ° C. for 60 minutes, A glass fiber nonwoven fabric tape having a width of 9 mm and a thickness of 150 μm on both sides of the coating film surface and an adhesive layer on one side was applied, and the copper foil surface was wound around an aluminum tube having a diameter of 75 mm. The wound roll is put in a vacuum dryer, heated to 250 ° C while being vacuumed, heat treated for 10 hours, then cooled to room temperature over 3 hours, copper-clad laminate without warping, twisting and curling A film was obtained.
(実施例10)
酸無水物として2,2’−ビス(3−ビフェニル)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物26.58gを用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表3に示す。
(実施例11)
酸無水物として2,2’−ビス(4−ビフェニル)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物26.58gを用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表3に示す。(Example 10)
The procedure of Example 9 was repeated except that 26.58 g of 2,2′-bis (3-biphenyl) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained. Each characteristic is shown in Table 3.
(Example 11)
By the same operation as in Example 9, except that 26.58 g of 2,2′-bis (4-biphenyl) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained. Each characteristic is shown in Table 3.
(実施例12)
酸無水物として2,2’−ビス(1−ナフチル)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物24.26gを用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表3に示す。
(実施例13)
酸無水物として2,2’−ビス(2−ナフチル)−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物24.26gを用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表3に示す。(Example 12)
By the same operation as in Example 9, except that 24.26 g of 2,2′-bis (1-naphthyl) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained. Each characteristic is shown in Table 3.
(Example 13)
By the same operation as in Example 9, except that 24.26 g of 2,2′-bis (2-naphthyl) -3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride was used as the acid anhydride. The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained. Each characteristic is shown in Table 3.
(実施例14)
ジアミンとして6−アミノ−2−(p−アミノフェニル)ベンゾオキサゾールを10.00g用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表4に示す。
(実施例15)
ジアミンとして5−アミノ−2−(p−アミノフェニル)ベンゾイミダゾールを10.00g用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表4に示す。
(実施例16)
ジアミンとして5−アミノ−2−(p−アミノフェニル)ベンゾチアゾールを10.00g用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂ならびにポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表4に示す。(Example 14)
The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained by the same operation as in Example 9 except that 10.00 g of 6-amino-2- (p-aminophenyl) benzoxazole was used as the diamine. . Each characteristic is shown in Table 4.
(Example 15)
The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained by the same operation as in Example 9 except that 10.00 g of 5-amino-2- (p-aminophenyl) benzimidazole was used as the diamine. . Each characteristic is shown in Table 4.
(Example 16)
The corresponding polyimide resin, polyimide resin film and copper-clad laminate film were obtained by the same operation as in Example 9 except that 10.00 g of 5-amino-2- (p-aminophenyl) benzothiazole was used as the diamine. . Each characteristic is shown in Table 4.
(比較例3)
窒素導入管,温度計,攪拌棒を備えた反応容器内を窒素置換した後、p−フェニレンジアミン10.00g、2,2’−ジフェノキシ−3,3’,4,4’−ビフェニルテトラカルボン酸二無水物41.36g、イソキノリン0.50gを仕込んだ。次いで、m−クレゾール450gを加えて完全に溶解させた後,25℃の反応温度で20時間攪拌すると、淡黄色のポリアミド酸溶液が得られた。その後、装置にディーンタークトラップを設置し、N2気流下、200℃の温度で撹拌したところ、1時間後に沈殿物が生じた。この沈殿物は各種溶媒に溶解しなかったため、ポリイミド樹脂フィルムを得ることができなかった。(Comparative Example 3)
After purging the inside of a reaction vessel equipped with a nitrogen introduction tube, a thermometer, and a stirring bar with nitrogen, 10.00 g of p-phenylenediamine, 2,2′-diphenoxy-3,3 ′, 4,4′-biphenyltetracarboxylic acid 41.36 g of dianhydride and 0.50 g of isoquinoline were charged. Subsequently, 450 g of m-cresol was added and completely dissolved, and then stirred at a reaction temperature of 25 ° C. for 20 hours to obtain a pale yellow polyamic acid solution. Thereafter, a Dean Turk trap was installed in the apparatus, and the mixture was stirred at a temperature of 200 ° C. in a N 2 stream. A precipitate was formed after 1 hour. Since this precipitate did not dissolve in various solvents, a polyimide resin film could not be obtained.
(比較例4)
ジアミンとして2,2’−ビス(トリフルオロメチル)−4,4’−ジアミノビフェニルを14.22g用いたこと以外は実施例9と同様の操作により、対応するポリイミド樹脂とポリイミド樹脂フィルムならびに銅張り積層フィルムを得た。各々の特性を表4に示す。(Comparative Example 4)
The corresponding polyimide resin, polyimide resin film and copper-plated resin were prepared in the same manner as in Example 9 except that 14.22 g of 2,2′-bis (trifluoromethyl) -4,4′-diaminobiphenyl was used as the diamine. A laminated film was obtained. Each characteristic is shown in Table 4.
本発明のポリイミド樹脂は、有機溶剤に易溶であり、ガラス転移温度、熱分解温度が高く、かつフィルムにした時の線膨張係数が20ppm/℃以下と低いという特徴を有する。また、該ポリイミド樹脂は、イミド化された状態で多くの有機溶剤に溶解できるので前駆体であるポリアミド酸溶液に比べて該溶液の保存安定性が大幅に改善できるという利点を有する。さらに、本発明のポリイミド樹脂溶液は、ポリイミド樹脂がイミド化されているので、例えば、該溶液を基板等の被被覆体に塗布し乾燥し硬化するのみでガラス転移点が高く、かつ線膨張係数が低いフィルムを形成することができるという利点を有する。そのために、前駆体であるポリアミド酸溶液を用いてフィルムを形成する場合に比べて低温で加工できる上に、イミド化時に発生する水によりボイドやクラックが発生し、配線基板等に不良をもたらすという課題が回避できるという利点を有する。また、本発明のポリイミド樹脂フィルムは、ガラス転移点が高く、かつ線膨張係数が低いので、例えば、配線基板においては金属配線層と樹脂基板との間の熱膨張差による、昇温、降温過程における熱応力により引き起こされる反りやクラックなどの不具合の発生が抑制されるという利点を有するので、電子機器の高機能化や小型化に伴って配線基板の薄型化や多層化の市場ニーズに応えることができる。従って、産業界に寄与することが大である。 The polyimide resin of the present invention is characterized by being easily soluble in an organic solvent, having a high glass transition temperature and thermal decomposition temperature, and having a low coefficient of linear expansion of 20 ppm / ° C. or less when formed into a film. In addition, since the polyimide resin can be dissolved in many organic solvents in an imidized state, it has an advantage that the storage stability of the solution can be greatly improved as compared with the polyamic acid solution as a precursor. Furthermore, since the polyimide resin solution of the present invention has an imidized polyimide resin, the glass transition point is high and the linear expansion coefficient can be obtained simply by applying the solution to a substrate such as a substrate, drying, and curing. Has the advantage that a low film can be formed. Therefore, it can be processed at a lower temperature than when forming a film using a polyamic acid solution as a precursor, and voids and cracks are generated due to water generated at the time of imidization, resulting in defects in wiring boards and the like. It has the advantage that the problem can be avoided. In addition, since the polyimide resin film of the present invention has a high glass transition point and a low coefficient of linear expansion, for example, in a wiring board, the process of temperature increase and decrease due to the difference in thermal expansion between the metal wiring layer and the resin substrate Because it has the advantage of suppressing the occurrence of defects such as warpage and cracks caused by thermal stress in the market, responding to market needs for thinner and multi-layered wiring boards as electronic devices become more functional and smaller Can do. Therefore, it is important to contribute to the industry.
Claims (6)
A polyimide resin containing a repeating unit represented by at least one of the following general formula (1A) and general formula (1B). (In the formula, R 1 represents any group of phenyl, 3-biphenyl, 4-biphenyl, 1-naphthyl, and 2-naphthyl. Az represents a divalent organic group having a benzazole structure.)
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PCT/JP2007/069171 WO2008047591A1 (en) | 2006-10-04 | 2007-10-01 | Polyimide resin, polyimide varnish, and polyimide film |
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JPS6253334A (en) * | 1985-09-02 | 1987-03-09 | Arakawa Chem Ind Co Ltd | Polyimide resin having thiazole ring and production thereof |
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